CN103824781A - 一种热膨胀系数适配微波毫米波模块集成结构制作方法 - Google Patents
一种热膨胀系数适配微波毫米波模块集成结构制作方法 Download PDFInfo
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- CN103824781A CN103824781A CN201310669659.1A CN201310669659A CN103824781A CN 103824781 A CN103824781 A CN 103824781A CN 201310669659 A CN201310669659 A CN 201310669659A CN 103824781 A CN103824781 A CN 103824781A
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CN201310669659.1A CN103824781B (zh) | 2013-12-10 | 2013-12-10 | 一种热膨胀系数适配微波毫米波模块集成结构制作方法 |
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CN103824781A true CN103824781A (zh) | 2014-05-28 |
CN103824781B CN103824781B (zh) | 2017-04-19 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106455459A (zh) * | 2016-12-20 | 2017-02-22 | 中国航空工业集团公司雷华电子技术研究所 | 一种微波模块结构 |
CN110719067A (zh) * | 2019-09-05 | 2020-01-21 | 中国电子科技集团公司第十三研究所 | 具有热匹配结构的太赫兹倍频器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5571740A (en) * | 1993-07-30 | 1996-11-05 | Texas Instruments Incorporated | Method of making a capped modular microwave integrated circuit |
JPH11266172A (ja) * | 1998-03-17 | 1999-09-28 | Nec Eng Ltd | 送受信機フロントエンド |
CN201215805Y (zh) * | 2007-11-02 | 2009-04-01 | 中国电子科技集团公司第十研究所 | Ltcc集成封装毫米波组件 |
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2013
- 2013-12-10 CN CN201310669659.1A patent/CN103824781B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5571740A (en) * | 1993-07-30 | 1996-11-05 | Texas Instruments Incorporated | Method of making a capped modular microwave integrated circuit |
JPH11266172A (ja) * | 1998-03-17 | 1999-09-28 | Nec Eng Ltd | 送受信機フロントエンド |
CN201215805Y (zh) * | 2007-11-02 | 2009-04-01 | 中国电子科技集团公司第十研究所 | Ltcc集成封装毫米波组件 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106455459A (zh) * | 2016-12-20 | 2017-02-22 | 中国航空工业集团公司雷华电子技术研究所 | 一种微波模块结构 |
CN110719067A (zh) * | 2019-09-05 | 2020-01-21 | 中国电子科技集团公司第十三研究所 | 具有热匹配结构的太赫兹倍频器 |
CN110719067B (zh) * | 2019-09-05 | 2023-08-15 | 中国电子科技集团公司第十三研究所 | 具有热匹配结构的太赫兹倍频器 |
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Effective date of registration: 20190228 Address after: 266000 No. 98 Xiangjiang Road, Huangdao District, Qingdao City, Shandong Province Patentee after: China Electronics Technology Instrument and Meter Co., Ltd. Address before: 266555 No. 98 Xiangjiang Road, Qingdao economic and Technological Development Zone, Shandong Patentee before: The 41st Institute of CETC |
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Address after: 266000 No. 98 Xiangjiang Road, Huangdao District, Qingdao City, Shandong Province Patentee after: CLP kesiyi Technology Co.,Ltd. Address before: 266000 No. 98 Xiangjiang Road, Huangdao District, Qingdao City, Shandong Province Patentee before: CHINA ELECTRONIC TECHNOLOGY INSTRUMENTS Co.,Ltd. |