CN103811311A - 用以改善线宽稳定性的SiON表面处理方法 - Google Patents

用以改善线宽稳定性的SiON表面处理方法 Download PDF

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CN103811311A
CN103811311A CN201210458254.9A CN201210458254A CN103811311A CN 103811311 A CN103811311 A CN 103811311A CN 201210458254 A CN201210458254 A CN 201210458254A CN 103811311 A CN103811311 A CN 103811311A
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虞颖
刘改花
郭振华
王雷
刘鹏
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
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Abstract

本发明公开了一种用以改善线宽稳定性的SiON表面处理方法，该方法在SiON薄膜沉积后，进行光刻工艺前，用水汽、氧气和氮气的混合气体的等离子体对SiON薄膜进行前处理。通过对SiON抗反射层的表面进行特殊的前处理，有效地改善了0.13μm制程的光刻过程及重新光刻过程中线宽的稳定性。

Description

用以改善线宽稳定性的SiON表面处理方法
技术领域
本发明涉及半导体集成电路制造领域，特别是涉及一种用以改善线宽稳定性的SiON表面处理方法。
背景技术
在半导体制造工艺中，稳定的ADI/AEI CD（光刻/干刻后关键尺寸）对于半导体产品的良率及可靠性的提升具有非常重要的作用。但是，随着CD(Critical Dimension，关键尺寸)的越来越小，光刻后关键尺寸的稳定性很容易受到前层薄膜或者rework process（返工工艺）等因素的影响而变差。尤其是在0.13μm制程中，第一金属层的光刻后关键尺寸需要控制在0.135μm左右，此时，光刻后关键尺寸的稳定性更容易变差。
为了提高CD的稳定性，可以在工艺中增加SiON（氮氧化硅）抗反射层，即在晶圆表面的金属薄膜的上面再沉积一层SiON薄膜，然后再进行光刻工艺，如图1所示。但是，即使增加了SiON抗反射层，CD的稳定性仍不够好。如表1和图2所示，在经过了一次Photo rework（光刻返工工艺）之后，CD（一般用Hitachi CD-SEM CD量测机台量测）变小了5nm左右，这对于0.13μm制程来讲是绝对不允许的，因此，需要找出一种方法来提高CD的稳定性。
表1 Photo返工工艺对CD稳定性的影响
Figure BDA00002406429000011
Figure BDA00002406429000021
发明内容
本发明要解决的技术问题是提供一种用以改善线宽稳定性的SiON表面处理方法，它可以提高线宽的稳定性。
为解决上述技术问题，本发明的用以改善线宽稳定性的SiON表面处理方法，是在SiON薄膜沉积后，进行光刻工艺前，用水汽、氧气和氮气的混合气体的等离子体对SiON薄膜进行前处理。
本发明通过对SiON抗反射层的表面进行特殊的前处理，有效地提高了0.13μm制程的光刻过程及重新光刻过程中线宽的稳定性。
附图说明
图1是常规的光刻工艺流程示意图。
图2是光刻返工工艺对线宽稳定性的影响图，图中数据采用表1的数据。
图3是本发明实施例增加了SiON前处理步骤的光刻工艺流程示意图。
图4是用不同配比的混合气体对晶圆表面SiON薄膜进行前处理得到的CD稳定性结果。
图5是光刻返工工艺对线宽稳定性的影响图，图中数据采用表3的数据。
具体实施方式
为对本发明的技术内容、特点与功效有更具体的了解，现结合图示的实施方式，详述如下：
本实施例在SiON薄膜沉积后，进行光刻工艺之前，对SiON薄膜进行了特殊的前处理，具体方法如下（参见图3）：
首先，用常规工艺完成SiON抗反射层的沉积，得到表面是SiON薄膜的晶圆，如图3（a）所示。晶圆表面从上往下依次为：SiON薄膜，金属（铝）薄膜。
然后，将上述制备的晶圆置入反应腔中，通入H2O（水汽）、O2（氧气）和N2（氮气）三种气体的混合气体，用微波电源产生等离子体（条件：射频功率为0～1500瓦，腔体压力为1～3托），等离子体与晶圆表面的SiON薄膜发生反应，如图3（b）所示。
上述混合气体中，H2O的流量为500～1000sccm，O2的流量为1000～5000sccm，N2的流量为100～300sccm。
对SiON薄膜的上述前处理完成后，进行正常的光刻工艺，如图3（c）所示。
用不同配比的气体（见表2）的等离子体，对晶圆表面的SiON薄膜进行前处理，并对反应后的晶圆进行外观形貌和关键尺寸大小确认，得到如表2和图4所示的结果。可以看出，在使用本实施例的方法对SiON抗反射层进行前处理后，晶圆的光刻后关键尺寸的稳定性明显变好，其中，以晶圆4（W4）的关键尺寸的稳定性为最好。
表2 不同配比的气体对SiON薄膜在不同实验条件下的结果
采用表2中晶圆4的气体配比条件对多片晶圆表面的SiON薄膜进行前处理，然后进行Photo rework实验，得到如表3和图5所示的结果。从表3的数据可以看出，第一次光刻和两次rework间的关键尺寸的差异都在2nm以内，显示了很好的关键尺寸稳定性。
表3 Photo返工工艺对关键尺寸稳定性的影响
Figure BDA00002406429000032
Figure BDA00002406429000041

Claims (5)

1.用以改善线宽稳定性的SiON表面处理方法，其特征在于，在SiON薄膜沉积后，进行光刻工艺前，用水汽、氧气和氮气的混合气体的等离子体对SiON薄膜进行前处理。
2.如权利要求1所述的方法，其特征在于，等离子体用微波电源产生，条件为：射频功率0～1500瓦，腔体压力1～3托。
3.如权利要求1或2所述的方法，其特征在于，水汽的流量为500～1000sccm，氧气的流量为1000～5000sccm，氮气的流量为100～300sccm。
4.如权利要求3所述的方法，其特征在于，混合气体分两步通入，第一步通水汽15秒，第二步通氧气和氮气的混合气体30秒。
5.如权利要求3所述的方法，其特征在于，混合气体分两步通入，第一步通水汽30秒，第二步通氧气和氮气的混合气体60秒。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174816B1 (en) * 1998-09-03 2001-01-16 Micron Technology, Inc. Treatment for film surface to reduce photo footing
CN1388582A (zh) * 2001-05-25 2003-01-01 株式会社东芝 半导体器件
US6573189B1 (en) * 2001-11-07 2003-06-03 Taiwan Semiconductor Manufacturing Company Manufacture method of metal bottom ARC
JP2006278836A (ja) * 2005-03-30 2006-10-12 Tokyo Electron Ltd エッチング方法、エッチング装置、コンピュータプログラム及びコンピュータ記憶媒体
CN1867695A (zh) * 2003-11-06 2006-11-22 东京毅力科创株式会社 改善沉积的介电膜上的显影后光刻胶外形的方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6174816B1 (en) * 1998-09-03 2001-01-16 Micron Technology, Inc. Treatment for film surface to reduce photo footing
CN1388582A (zh) * 2001-05-25 2003-01-01 株式会社东芝 半导体器件
US6573189B1 (en) * 2001-11-07 2003-06-03 Taiwan Semiconductor Manufacturing Company Manufacture method of metal bottom ARC
CN1867695A (zh) * 2003-11-06 2006-11-22 东京毅力科创株式会社 改善沉积的介电膜上的显影后光刻胶外形的方法
JP2006278836A (ja) * 2005-03-30 2006-10-12 Tokyo Electron Ltd エッチング方法、エッチング装置、コンピュータプログラム及びコンピュータ記憶媒体

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