CN103746016A - 可调带隙量子阱结构的不锈钢衬底太阳能电池及制备方法 - Google Patents

可调带隙量子阱结构的不锈钢衬底太阳能电池及制备方法 Download PDF

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CN103746016A
CN103746016A CN201310746388.5A CN201310746388A CN103746016A CN 103746016 A CN103746016 A CN 103746016A CN 201310746388 A CN201310746388 A CN 201310746388A CN 103746016 A CN103746016 A CN 103746016A
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CN103746016B (zh
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张铁岩
张东
鞠振河
赵琰
李昱材
宋世巍
王健
王刚
边继明
刘宝丹
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Shenyang Institute of Engineering
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Abstract

本发明属于柔性太阳能电池制造技术领域，特别涉及一种可调带隙量子阱结构的不锈钢衬底太阳能电池及制备方法。本发明的太阳能电池具体结构是：Al电极/GZO/P型InxGa1-xN/I层本征nc-Si:H/N型nc-Si:H/GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底，其制备方法是首先磁控溅射制备AlN绝缘层和Al背电极，然后采用ECR-PEMOCVD依次沉积GZO基透明导电薄膜、N型nc-Si:H薄膜、I层本征nc-Si:H薄膜、P型InxGa1-xN薄膜、GZO薄膜，最后制备金属Al电极。本发明的可调带隙量子阱结构的不锈钢衬底太阳能电池具有优异的柔软性，重量轻，携带方便，具有产业化潜力和市场空间，而且制备工艺简单，能实现规模生产。

Description

可调带隙量子阱结构的不锈钢衬底太阳能电池及制备方法
技术领域
    本发明属于柔性太阳能电池制造技术领域，特别涉及一种可调带隙量子阱结构的不锈钢衬底太阳能电池及制备方法。
背景技术
硅晶体的第一代太阳能电池由于转化效率高在目前的工业生产和市场上处于主导地位。但是由于需要消耗大量的原材料，成本较高，成为了太阳能电池发展的主要障碍。为了节约原材料，进一步推进太阳能电池的发展，薄膜太阳能电池成为近些年太阳能电池的研究热点。
传统的薄膜太阳能电池结构采用刚性材料和钢化玻璃材料作为基底，这限制了其使用范围。随着太阳能电池成本越来越低，该种电池越来越多的进入民用领域，例如屋顶、书包和帐篷等等，作为一种便携电源，这就要求其具有柔性的衬底。
柔性衬底薄膜太阳能电池是指在柔性材料即聚酰亚胺（PI）或柔性不锈钢上制作的薄膜太阳能电池，由于其具有携带轻便、重量轻以及不易粉碎的优势，以及独特的使用特性，从而具有广阔的市场竞争力。
目前，技术相对成熟的薄膜太阳能电池大多都是硅基材料，其PIN中的I层一般都是非晶或者微晶硅（Si）薄膜。非晶或者微晶硅（Si）薄膜又称无定型硅，就其微观结构来看，是短程有序但是长程无序的不规则网状结构，包含大量的悬挂键和空位等缺陷。但是由于非晶或者微晶硅（Si）薄膜带隙宽度在1.7eV左右，对太阳能辐射光谱的长波很不敏感，使其光电转化效率较低，而且还存在明显的光致衰退效应，使太阳能电池的光致性能稳定性较差，导致薄膜太阳能电池的市场竞争力较差。
发明内容
针对现在技术存在的不足，本发明提供一种可调带隙量子阱结构的不锈钢衬底太阳能电池及制备方法，通过采用带隙宽度可以调整到太阳能电池最敏感的区域的InxGa1-xN晶体薄膜作为柔性太阳能电池的P层，其量子阱结构提高了太阳能电池的光电转化效率和光致性能的稳定性。
一种可调带隙量子阱结构的不锈钢衬底太阳能电池，是以不锈钢片作为柔性衬底，衬底上是AlN绝缘层，AlN绝缘层上方是Al背电极，Al背电极上方是作为缓冲层的镓掺杂氧化锌（GZO）基导电薄膜，GZO基导电薄膜上方是N型氢化纳米晶硅（nc-Si:H）薄膜，N型nc-Si:H薄膜上方是I层本征nc-Si:H薄膜，I层本征nc-Si:H薄膜上方是P型InxGa1-xN薄膜，P型InxGa1-xN薄膜上方是GZO基导电薄膜，GZO基导电薄膜上方是Al金属电极；具体结构是：Al电极/GZO/P型InxGa1-xN/I层本征nc-Si:H/N型nc-Si:H/GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底，其中P层InxGa1-xN薄膜的带隙宽度可调且具有量子阱结构。
本发明的一种可调带隙量子阱结构的不锈钢衬底太阳能电池的制备方法按照以下步骤进行：
（1）将不锈钢柔性衬底基片去离子水超声波清洗后，用N2吹干送入磁控溅射反应室，在9.0×10-4 Pa真空的条件下，沉积制备AlN绝缘层，以Ar和N2混合气体反应源，Ar和N2的流量比10:1，以金属铝为靶材，将衬底基片加热到100~300℃，沉积时间为30~60min，此时的结构是AlN绝缘层/柔性不锈钢衬底；
    （2）继续磁控溅射制备金属Al背电极，以Ar作为气体反应源，Ar流量为10~20sccm，以金属铝为靶材，衬底温度为50~350℃，沉积时间为3~10min，此时的结构是Al背电极/AlN绝缘层/柔性不锈钢衬底；
（3）然后采用电子回旋共振等离子增强有机物化学气相沉积系统（ECR-PEMOCVD）制备GZO基透明导电薄膜，向反应室中通入Ar携带的三甲基镓（TMGa）、二乙基锌(DEZn)和O2，TMGa、DEZn和O2的流量比为1:2:80，此时控制微波功率为650W，沉积温度为200～400℃，沉积气压为0.8~1.2Pa，沉积时间为10～20min，此时的结构是GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（4）继续采用ECR-PEMOCVD制备N型nc-Si：H薄膜，向反应室中通入Ar稀释的SiH4和H2稀释的PH3，Ar稀释的SiH4流量为5～8sccm，H2稀释的PH3流量为0.5～5sccm，H2流量为25~40sccm，微波功率为650W，沉积温度为250～600℃，沉积气压为0.8~1.2Pa，沉积时间为30～80min，此时的结构是N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（5）继续采用ECR-PEMOCVD制备I层本征nc-Si：H薄膜，向反应室中通入Ar稀释的SiH4和H2， Ar稀释的SiH4流量为5～8sccm，H2流量是25~40sccm，微波功率为650W，沉积温度为250～600℃，沉积气压为0.8~1.2Pa，沉积时间为30～80min，此时的结构是I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（6）继续采用ECR-PEMOCVD制备P型InxGa1-xN量子阱可调带隙晶体薄膜，向反应室中通入H2稀释的TMGa、三甲基铟（TMIn）、二茂镁（Mg(C5H5)2)和N2，其中TMGa、TMIn和Mg(C5H5)2流量比为8:4:1，N2流量为80~ 120sccm，微波功率为650W，沉积温度为200～600℃，沉积气压为0.9~1.4Pa，沉积时间为40～60min，此时的结构是P型InxGa1-xN/I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
   （7）继续采用ECR-PEMOCVD制备GZO基透明导电薄膜，向反应室中通入Ar携带的TMGa、DEZn和O2，TMGa、DEZn和O2的流量比为1:2:80，微波功率为650W，沉积温度为200～400℃，沉积气压为0.8~1.2Pa，沉积时间为10～20min，此时的结构是GZO/P型InxGa1-xN/I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
     （8）采用磁控溅射制备金属Al电极，以Ar作为气体反应源，Ar流量为10~20sccm，以金属铝为靶材，沉积温度为50~400℃，沉积时间为3~10min，此时的结构是Al电极/GZO/P型InxGa1-xN/I层本征nc-Si:H/N型nc-Si:H/GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底。
其中，所述的磁控溅射用金属铝靶材的纯度为99.99%。
所述的InxGa1-xN薄膜，x在0~1间任意取值。
与现有技术相比，本发明的特点和有益效果是：
本发明的Al电极/GZO/P型InxGa1-xN/I层本征nc-Si:H/N型nc-Si:H/GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底太阳能电池，所采用的衬底为柔性衬底的不锈钢等，此柔性太阳能电池最大的特点是重量轻、携带方便、不易粉碎，其重量比功率和体积比功率较其它种类的电池高几个数量级。具有很好的柔性，可以任意卷曲、裁剪和粘贴；在制备中，改变了P层材料和结构，引入具有带隙可调的InxGa1-xN量子阱晶体薄膜作为P掺杂层，InxGa1-xN材料具有稳定好，耐腐蚀且具有隧穿势垒以及低的光损系数，提高了电池的转化效率；本发明中还在Al背电极和N型Si基薄膜之间采用了GZO透明薄膜作为透明导电电极，GZO一方面作为缓冲层，另一方面作为透明导电电极，增加了薄膜太阳能电池的透光率，同时提高了透明电极的耐腐蚀性能，使得薄膜太阳能电池的光电转换效率得到了很大的提高；本发明还采用AlN作为绝缘层，其晶格失配率相差很小，制备出质量均匀的Al背电极；
综上，本发明的柔性太阳能电池具有优异的柔软性，重量轻，携带方便，具有具有产业化潜力和市场空间，而且制备工艺简单，能实现规模生产。
附图说明
图1是本发明的可调带隙量子阱结构的不锈钢衬底太阳能电池的结构图；
图2是本发明的可调带隙量子阱结构的不锈钢衬底太阳能电池的制备流程图；
图3 是本发明实施例1中的N型nc-Si:H薄膜的X射线光电子能谱分析（XPS）图；
图4是本发明实施例1中的N型nc-Si:H薄膜的Raman谱线；
图5是本发明实施例1中的N型nc-Si:H薄膜的原子力显微镜（AFM）图片；
图6 是本发明实施例1中的I层本征nc-Si：H薄膜的Raman谱线；
图7 是本发明实施例1中的I层本征nc-Si：H薄膜的XRD谱线；
图8 是本发明实施例1中的 P型InxGa1-xN量子阱晶体薄膜的AFM图片。
具体实施方式
下面对本发明的实施例作详细说明，但本发明的保护范围不限于下述的实施例。
     本发明样品的结晶性能测试为X射线衍射分析，其中X射线衍射分析所用仪器的型号为：Bruker AXS D8。
     本发明中采用 RENISHAW in Via Raman Microscope光谱仪测试沉积薄膜的Raman光谱，激光光源为632.8nm的Ne-He激光器，激光功率为35mW，分辨率为2μm，
    本发明中XPS采用的是美国Thermo VG公司生产的型号为ESCALAB250的多功能表面分析系统。X射线源为Al靶Kα(1486.6eV)线。
本发明利用的原子力显微镜（AFM）的型号是Picoscan 2500，产于Agilent公司。在正常室温的测试条件下对薄膜样品的形貌进行了测试与分析。样品的测试分析区域是                                               
Figure 2013107463885100002DEST_PATH_IMAGE002
。
实施例1
    本实施例的可调带隙量子阱结构的不锈钢衬底太阳能电池的结构图如图1所示，制备方法是：
（1）将不锈钢柔性衬底基片去离子水超声波清洗5分钟后，用N2吹干送入磁控溅射反应室，在9.0×10-4 Pa真空的条件下，沉积制备AlN绝缘层，以Ar和N2混合气体反应源，Ar和N2的流量比10:1，将衬底基片加热到100℃，沉积时间为30min，此时的结构是AlN绝缘层/柔性不锈钢衬底；
    （2）继续磁控溅射制备金属Al背电极，以Ar作为气体反应源，Ar流量为10sccm，衬底温度为50℃，沉积时间为3min，此时的结构是Al背电极/AlN绝缘层/柔性不锈钢衬底；
（3）然后采用ECR-PEMOCVD制备GZO基透明导电薄膜，向反应室中通入Ar携带的TMGa、DEZn和O2，TMGa、DEZn和O2的流量比为1:2:80，此时控制微波功率为650W，沉积温度为200℃，沉积气压为0.8Pa，沉积时间为10min，此时的结构是GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（4）继续采用ECR-PEMOCVD制备N型nc-Si：H薄膜，向反应室中通入Ar稀释的SiH4和H2稀释的PH3，Ar稀释的SiH4流量为5sccm，H2稀释的PH3流量为0.5sccm，H2流量为25sccm，微波功率为650W，沉积温度为250℃，沉积气压为0.8Pa，沉积时间为30min，此时的结构是N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
采用XPS分析设备对P掺杂的N型nc-Si：H薄膜的性能进行了测试分析，结果如图3所示，由图3可以看出P掺杂N型Si薄膜性能良好；采用Raman光谱仪对薄膜的结构性能进行了测试分析，结果如图4所示，由图4可以看出P掺杂的N型nc-Si：H薄膜的结构性能良好；采用AFM对P掺杂N型Si薄膜的形貌进行了测试分析，结果如图5所示，由图5可以看出P掺杂的N型nc-Si：H薄膜形貌很平整，晶粒分布很均匀；
（5）继续采用ECR-PEMOCVD制备I层本征nc-Si：H薄膜，向反应室中通入Ar稀释的SiH4和H2， Ar稀释的SiH4流量为5sccm，H2流量是25sccm，微波功率为650W，沉积温度为250℃，沉积气压为0.8Pa，沉积时间为30min，此时的结构是I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
采用Raman光谱仪对非掺杂I层本征nc-Si：H薄膜的结构性能进行了测试分析，结果如图6所示，由图6可以看出非掺杂I层本征Si薄膜结构性能良好；采用XRD衍射光谱谱线对非掺杂I层本征Si薄膜的结晶性能进行了测试分析；结果如图7所示，由图7可以看出非掺杂I层本征Si薄膜结晶性能良好；
（6）继续采用ECR-PEMOCVD制备P型InxGa1-xN量子阱可调带隙晶体薄膜，向反应室中通入H2稀释的TMGa、TMIn、Mg(C5H5)2和N2，其中TMGa、TMIn和Mg(C5H5)2流量比为8:4:1，N2流量为80sccm，微波功率为650W，沉积温度为200℃，沉积气压为0.9Pa，沉积时间为40min，此时的结构是P型InxGa1-xN/I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
采用AFM对Mg掺杂的P型InxGa1-xN量子阱晶体薄膜的形貌进行了测试分析。其结果如图8所示，由图8可以看出InxGa1-xN量子阱本征晶体薄膜形貌很平整，晶粒分布很均匀。
   （7）继续采用ECR-PEMOCVD制备GZO基透明导电薄膜，向反应室中通入Ar携带的TMGa、DEZn和O2，TMGa、DEZn和O2的流量比为1:2:80，微波功率为650W，沉积温度为200℃，沉积气压为0.8Pa，沉积时间为10min，此时的结构是GZO/P型InxGa1-xN/I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
     （8）采用磁控溅射制备金属Al电极，以Ar作为气体反应源，Ar流量为10sccm，沉积温度为50℃，沉积时间为3min，此时的结构是Al电极/GZO/P型InxGa1-xN/I层本征nc-Si:H/N型nc-Si:H/GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底。
实施例2
本实施例的可调带隙量子阱结构的不锈钢衬底太阳能电池的结构图如图1所示，制备方法是：
（1）将不锈钢柔性衬底基片去离子水超声波清洗5分钟后，用N2吹干送入磁控溅射反应室，在9.0×10-4 Pa真空的条件下，沉积制备AlN绝缘层，以Ar和N2混合气体反应源，Ar和N2的流量比10:1，将衬底基片加热到150℃，沉积时间为45min，此时的结构是AlN绝缘层/柔性不锈钢衬底；
    （2）继续磁控溅射制备金属Al背电极，以Ar作为气体反应源，Ar流量为12sccm，衬底温度为150℃，沉积时间为5min，此时的结构是Al背电极/AlN绝缘层/柔性不锈钢衬底；
（3）然后采用ECR-PEMOCVD制备GZO基透明导电薄膜，向反应室中通入Ar携带的TMGa、DEZn和O2，TMGa、DEZn和O2的流量比为1:2:80，此时控制微波功率为650W，沉积温度为250℃，沉积气压为1.0Pa，沉积时间为13min，此时的结构是GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（4）继续采用ECR-PEMOCVD制备N型nc-Si：H薄膜，向反应室中通入Ar稀释的SiH4和H2稀释的PH3，Ar稀释的SiH4流量为6sccm，H2稀释的PH3流量为3sccm，H2流量为28sccm，微波功率为650W，沉积温度为300℃，沉积气压为1.0Pa，沉积时间为40min，此时的结构是N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（5）继续采用ECR-PEMOCVD制备I层本征nc-Si：H薄膜，向反应室中通入Ar稀释的SiH4和H2， Ar稀释的SiH4流量为6sccm，H2流量是26sccm，微波功率为650W，沉积温度为300℃，沉积气压为1.0Pa，沉积时间为48min，此时的结构是I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（6）继续采用ECR-PEMOCVD制备P型InxGa1-xN量子阱可调带隙晶体薄膜，向反应室中通入H2稀释的TMGa、TMIn、Mg(C5H5)2和N2，其中TMGa、TMIn和Mg(C5H5)2流量比为8:4:1，N2流量为105sccm，微波功率为650W，沉积温度为600℃，沉积气压为1.0Pa，沉积时间为50min，此时的结构是P型InxGa1-xN/I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
   （7）继续采用ECR-PEMOCVD制备GZO基透明导电薄膜，向反应室中通入Ar携带的TMGa、DEZn和O2，TMGa、DEZn和O2的流量比为1:2:80，微波功率为650W，沉积温度为400℃，沉积气压为1.0Pa，沉积时间为18min，此时的结构是GZO/P型InxGa1-xN/I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
     （8）采用磁控溅射制备金属Al电极，以Ar作为气体反应源，Ar流量为18sccm，沉积温度为150℃，沉积时间为10min，此时的结构是Al电极/GZO/P型InxGa1-xN/I层本征nc-Si:H/N型nc-Si:H/GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底。
实施例3
本实施例的可调带隙量子阱结构的不锈钢衬底太阳能电池的结构图如图1所示，制备方法是：
（1）将不锈钢柔性衬底基片去离子水超声波清洗5分钟后，用N2吹干送入磁控溅射反应室，在9.0×10-4 Pa真空的条件下，沉积制备AlN绝缘层，以Ar和N2混合气体反应源，Ar和N2的流量比10:1，将衬底基片加热到300℃，沉积时间为60min，此时的结构是AlN绝缘层/柔性不锈钢衬底；
    （2）继续磁控溅射制备金属Al背电极，以Ar作为气体反应源，Ar流量为20sccm，衬底温度为350℃，沉积时间为10min，此时的结构是Al背电极/AlN绝缘层/柔性不锈钢衬底；
（3）然后采用ECR-PEMOCVD制备GZO基透明导电薄膜，向反应室中通入Ar携带的TMGa、DEZn和O2，TMGa、DEZn和O2的流量比为1:2:80，此时控制微波功率为650W，沉积温度为400℃，沉积气压为1.2Pa，沉积时间为20min，此时的结构是GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（4）继续采用ECR-PEMOCVD制备N型nc-Si：H薄膜，向反应室中通入Ar稀释的SiH4和H2稀释的PH3，Ar稀释的SiH4流量为8sccm，H2稀释的PH3流量为5sccm，H2流量为40sccm，微波功率为650W，沉积温度为600℃，沉积气压为1.2Pa，沉积时间为80min，此时的结构是N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（5）继续采用ECR-PEMOCVD制备I层本征nc-Si：H薄膜，向反应室中通入Ar稀释的SiH4和H2， Ar稀释的SiH4流量为8sccm，H2流量是40sccm，微波功率为650W，沉积温度为600℃，沉积气压为1.8Pa，沉积时间为80min，此时的结构是I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（6）继续采用ECR-PEMOCVD制备P型InxGa1-xN量子阱可调带隙晶体薄膜，向反应室中通入H2稀释的TMGa、TMIn、Mg(C5H5)2和N2，其中TMGa、TMIn和Mg(C5H5)2流量比为8:4:1，N2流量为120sccm，微波功率为650W，沉积温度为300℃，沉积气压为1.4Pa，沉积时间为60min，此时的结构是P型InxGa1-xN/I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
   （7）继续采用ECR-PEMOCVD制备GZO基透明导电薄膜，向反应室中通入Ar携带的TMGa、DEZn和O2，TMGa、DEZn和O2的流量比为1:2:80，微波功率为650W，沉积温度为300℃，沉积气压为1.2Pa，沉积时间为20min，此时的结构是GZO/P型InxGa1-xN/I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
     （8）采用磁控溅射制备金属Al电极，以Ar作为气体反应源，Ar流量为20sccm，沉积温度为400℃，沉积时间为5min，此时的结构是Al电极/GZO/P型InxGa1-xN/I层本征nc-Si:H/N型nc-Si:H/GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底。
实施例4
本实施例的可调带隙量子阱结构的不锈钢衬底太阳能电池的结构图如图1所示，制备方法是：
（1）将不锈钢柔性衬底基片去离子水超声波清洗5分钟后，用N2吹干送入磁控溅射反应室，在9.0×10-4 Pa真空的条件下，沉积制备AlN绝缘层，以Ar和N2混合气体反应源，Ar和N2的流量比10:1，将衬底基片加热到250℃，沉积时间为50min，此时的结构是AlN绝缘层/柔性不锈钢衬底；
    （2）继续磁控溅射制备金属Al背电极，以Ar作为气体反应源，Ar流量为18sccm，衬底温度为280℃，沉积时间为9min，此时的结构是Al背电极/AlN绝缘层/柔性不锈钢衬底；
（3）然后采用ECR-PEMOCVD制备GZO基透明导电薄膜，向反应室中通入Ar携带的TMGa、DEZn和O2，TMGa、DEZn和O2的流量比为1:2:80，此时控制微波功率为650W，沉积温度为380℃，沉积气压为1.1Pa，沉积时间为18min，此时的结构是GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（4）继续采用ECR-PEMOCVD制备N型nc-Si：H薄膜，向反应室中通入Ar稀释的SiH4和H2稀释的PH3，Ar稀释的SiH4流量为7sccm，H2稀释的PH3流量为4sccm，H2流量为35sccm，微波功率为650W，沉积温度为550℃，沉积气压为1.1Pa，沉积时间为70min，此时的结构是N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（5）继续采用ECR-PEMOCVD制备I层本征nc-Si：H薄膜，向反应室中通入Ar稀释的SiH4和H2， Ar稀释的SiH4流量为7sccm，H2流量是36sccm，微波功率为650W，沉积温度为500℃，沉积气压为1.0Pa，沉积时间为60min，此时的结构是I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（6）继续采用ECR-PEMOCVD制备P型InxGa1-xN量子阱可调带隙晶体薄膜，向反应室中通入H2稀释的TMGa、TMIn、Mg(C5H5)2和N2，其中TMGa、TMIn和Mg(C5H5)2流量比为8:4:1，N2流量为100sccm，微波功率为650W，沉积温度为600℃，沉积气压为1.2Pa，沉积时间为50min，此时的结构是P型InxGa1-xN/I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
   （7）继续采用ECR-PEMOCVD制备GZO基透明导电薄膜，向反应室中通入Ar携带的TMGa、DEZn和O2，TMGa、DEZn和O2的流量比为1:2:80，微波功率为650W，沉积温度为300℃，沉积气压为1.1Pa，沉积时间为15min，此时的结构是GZO/P型InxGa1-xN/I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
     （8）采用磁控溅射制备金属Al电极，以Ar作为气体反应源，Ar流量为18sccm，沉积温度为300℃，沉积时间为8min，此时的结构是Al电极/GZO/P型InxGa1-xN/I层本征nc-Si:H/N型nc-Si:H/GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底。
实施例5
本实施例的可调带隙量子阱结构的不锈钢衬底太阳能电池的结构图如图1所示，制备方法是：
（1）将不锈钢柔性衬底基片去离子水超声波清洗5分钟后，用N2吹干送入磁控溅射反应室，在9.0×10-4 Pa真空的条件下，沉积制备AlN绝缘层，以Ar和N2混合气体反应源，Ar和N2的流量比10:1，将衬底基片加热到230℃，沉积时间为60min，此时的结构是AlN绝缘层/柔性不锈钢衬底；
    （2）继续磁控溅射制备金属Al背电极，以Ar作为气体反应源，Ar流量为15sccm，衬底温度为300℃，沉积时间为10min，此时的结构是Al背电极/AlN绝缘层/柔性不锈钢衬底；
（3）然后采用ECR-PEMOCVD制备GZO基透明导电薄膜，向反应室中通入Ar携带的TMGa、DEZn和O2，TMGa、DEZn和O2的流量比为1:2:80，此时控制微波功率为650W，沉积温度为400℃，沉积气压为1.1Pa，沉积时间为20min，此时的结构是GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（4）继续采用ECR-PEMOCVD制备N型nc-Si：H薄膜，向反应室中通入Ar稀释的SiH4和H2稀释的PH3，Ar稀释的SiH4流量为8sccm，H2稀释的PH3流量为5sccm，H2流量为35sccm，微波功率为650W，沉积温度为500℃，沉积气压为1.1Pa，沉积时间为75min，此时的结构是N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（5）继续采用ECR-PEMOCVD制备I层本征nc-Si：H薄膜，向反应室中通入Ar稀释的SiH4和H2， Ar稀释的SiH4流量为7sccm，H2流量是40sccm，微波功率为650W，沉积温度为600℃，沉积气压为0.8Pa，沉积时间为70min，此时的结构是I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（6）继续采用ECR-PEMOCVD制备P型InxGa1-xN量子阱可调带隙晶体薄膜，向反应室中通入H2稀释的TMGa、TMIn、Mg(C5H5)2和N2，其中TMGa、TMIn和Mg(C5H5)2流量比为8:4:1，N2流量为110sccm，微波功率为650W，沉积温度为600℃，沉积气压为1.2Pa，沉积时间为60min，此时的结构是P型InxGa1-xN/I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
   （7）继续采用ECR-PEMOCVD制备GZO基透明导电薄膜，向反应室中通入Ar携带的TMGa、DEZn和O2，TMGa、DEZn和O2的流量比为1:2:80，微波功率为650W，沉积温度为300℃，沉积气压为1.2Pa，沉积时间为20min，此时的结构是GZO/P型InxGa1-xN/I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
     （8）采用磁控溅射制备金属Al电极，以Ar作为气体反应源，Ar流量为1820sccm，沉积温度为300℃，沉积时间为8min，此时的结构是Al电极/GZO/P型InxGa1-xN/I层本征nc-Si:H/N型nc-Si:H/GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底。

Claims (4)

1.一种可调带隙量子阱结构的不锈钢衬底太阳能电池，其特征在于是以不锈钢片作为柔性衬底，衬底上是AlN绝缘层，AlN绝缘层上方是Al背电极，Al背电极上方是作为缓冲层的镓掺杂氧化锌（GZO）基导电薄膜，GZO基导电薄膜上方是N型氢化纳米晶硅（nc-Si:H）薄膜，N型nc-Si:H薄膜上方是I层本征nc-Si:H薄膜，I层本征nc-Si:H薄膜上方是P型InxGa1-xN薄膜，P型InxGa1-xN薄膜上方是GZO基导电薄膜，GZO基导电薄膜上方是Al金属电极；具体结构是：Al电极/GZO/P型InxGa1-xN/I层本征nc-Si:H/N型nc-Si:H/GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底，其中P层InxGa1-xN薄膜的带隙宽度可调且具有量子阱结构。
2.根据权利要求1所述的一种可调带隙量子阱结构的不锈钢衬底太阳能电池，其特征在于所述的InxGa1-xN薄膜，x在0~1间任意取值。
3.根据权利要求1所述的一种可调带隙量子阱结构的不锈钢衬底太阳能电池的制备方法，其特征在于按照以下步骤进行：
（1）将不锈钢柔性衬底基片去离子水超声波清洗后，用N2吹干送入磁控溅射反应室，在9.0×10-4 Pa真空的条件下，以金属铝为靶材，沉积制备AlN绝缘层，以Ar和N2混合气体反应源，Ar和N2的流量比10:1，将衬底基片加热到100~300℃，沉积时间为30~60min，此时的结构是AlN绝缘层/柔性不锈钢衬底；
    （2）继续磁控溅射制备金属Al背电极，以Ar作为气体反应源，Ar流量为10~20sccm，以金属铝为靶材，衬底温度为50~350℃，沉积时间为3~10min，此时的结构是Al背电极/AlN绝缘层/柔性不锈钢衬底；
（3）然后采用电子回旋共振等离子增强有机物化学气相沉积系统（ECR-PEMOCVD）制备GZO基透明导电薄膜，向反应室中通入Ar携带的三甲基镓（TMGa）、二乙基锌(DEZn)和O2，TMGa、DEZn和O2的流量比为1:2:80，此时控制微波功率为650W，沉积温度为200～400℃，沉积气压为0.8~1.2Pa，沉积时间为10～20min，此时的结构是GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（4）继续采用ECR-PEMOCVD制备N型nc-Si：H薄膜，向反应室中通入Ar稀释的SiH4和H2稀释的PH3，Ar稀释的SiH4流量为5～8sccm，H2稀释的PH3流量为0.5～5sccm，H2流量为25~40sccm，微波功率为650W，沉积温度为250～600℃，沉积气压为0.8~1.2Pa，沉积时间为30～80min，此时的结构是N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（5）继续采用ECR-PEMOCVD制备I层本征nc-Si：H薄膜，向反应室中通入Ar稀释的SiH4和H2， Ar稀释的SiH4流量为5～8sccm，H2流量是25~40sccm，微波功率为650W，沉积温度为250～600℃，沉积气压为0.8~1.2Pa，沉积时间为30～80min，此时的结构是I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
（6）继续采用ECR-PEMOCVD制备P型InxGa1-xN量子阱可调带隙晶体薄膜，向反应室中通入H2稀释的TMGa、三甲基铟（TMIn）、二茂镁（Mg(C5H5)2)和N2，其中TMGa、TMIn和Mg(C5H5)2流量比为8:4:1，N2流量为80~ 120sccm，微波功率为650W，沉积温度为200～600℃，沉积气压为0.9~1.4Pa，沉积时间为40～60min，此时的结构是P型InxGa1-xN/I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
   （7）继续采用ECR-PEMOCVD制备GZO基透明导电薄膜，向反应室中通入Ar携带的TMGa、DEZn和O2，TMGa、DEZn和O2的流量比为1:2:80，微波功率为650W，沉积温度为200～400℃，沉积气压为0.8~1.2Pa，沉积时间为10～20min，此时的结构是GZO/P型InxGa1-xN/I层本征nc-Si：H/N型nc-Si：H /GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底；
     （8）采用磁控溅射制备金属Al电极，以Ar作为气体反应源，Ar流量为10~20sccm，以金属铝为靶材，沉积温度为50~400℃，沉积时间为3~10min，此时的结构是Al电极/GZO/P型InxGa1-xN/I层本征nc-Si:H/N型nc-Si:H/GZO/Al背电极/AlN绝缘层/柔性不锈钢衬底。
4.根据权利要求3所述的一种可调带隙量子阱结构的不锈钢衬底太阳能电池的制备方法，其特征在于所述的磁控溅射用金属铝靶材的纯度为99.99%。
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CN105140339A (zh) * 2015-08-05 2015-12-09 辽宁恒华航海电力设备工程有限公司 金刚石保护层结构的柔性衬底薄膜太阳能电池及制备方法
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