CN103733341B - 图像传感器、其制造方法及检查装置 - Google Patents

图像传感器、其制造方法及检查装置 Download PDF

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Publication number
CN103733341B
CN103733341B CN201280039991.3A CN201280039991A CN103733341B CN 103733341 B CN103733341 B CN 103733341B CN 201280039991 A CN201280039991 A CN 201280039991A CN 103733341 B CN103733341 B CN 103733341B
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CN
China
Prior art keywords
light receiving
light
lens
image sensor
insulating layer
Prior art date
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Expired - Fee Related
Application number
CN201280039991.3A
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English (en)
Chinese (zh)
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CN103733341A (zh
Inventor
田口步
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN103733341A publication Critical patent/CN103733341A/zh
Application granted granted Critical
Publication of CN103733341B publication Critical patent/CN103733341B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/645—Specially adapted constructive features of fluorimeters
    • G01N21/6452—Individual samples arranged in a regular 2D-array, e.g. multiwell plates
    • G01N21/6454—Individual samples arranged in a regular 2D-array, e.g. multiwell plates using an integrated detector array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements

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  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Pathology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Immunology (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Signal Processing (AREA)
  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electromagnetism (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201280039991.3A 2011-08-24 2012-08-01 图像传感器、其制造方法及检查装置 Expired - Fee Related CN103733341B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011182131A JP2013045857A (ja) 2011-08-24 2011-08-24 イメージセンサ及びその製造方法並びに検査装置
JP2011-182131 2011-08-24
PCT/JP2012/004883 WO2013027338A1 (ja) 2011-08-24 2012-08-01 イメージセンサ及びその製造方法並びに検査装置

Publications (2)

Publication Number Publication Date
CN103733341A CN103733341A (zh) 2014-04-16
CN103733341B true CN103733341B (zh) 2018-01-26

Family

ID=47746112

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280039991.3A Expired - Fee Related CN103733341B (zh) 2011-08-24 2012-08-01 图像传感器、其制造方法及检查装置

Country Status (5)

Country Link
US (1) US9324751B2 (enExample)
EP (1) EP2750190B1 (enExample)
JP (1) JP2013045857A (enExample)
CN (1) CN103733341B (enExample)
WO (1) WO2013027338A1 (enExample)

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MX392471B (es) 2013-11-17 2025-03-24 Quantum Si Inc Sistema optico y chip de ensayo para sondear, detectar y analizar moleculas
BR112016013353B1 (pt) 2013-12-10 2020-11-24 Illumina, Inc Biossensor e metodo para produzir um biossensor
JP6320870B2 (ja) 2014-07-31 2018-05-09 株式会社東芝 顕微撮影装置を用いた観察方法
US20160050376A1 (en) * 2014-08-18 2016-02-18 Ron Fridental Image sensor with sub-wavelength resolution
EP3286549A4 (en) * 2015-04-22 2019-04-17 Shenzhen Genorivision Technology Co., Ltd. BIOSENSOR
JP6462837B2 (ja) * 2017-12-01 2019-01-30 株式会社東芝 顕微撮影装置を用いた観察方法
JP2020085666A (ja) * 2018-11-26 2020-06-04 ソニーセミコンダクタソリューションズ株式会社 生体由来物質検出用チップ、生体由来物質検出装置及び生体由来物質検出システム
JP6692404B2 (ja) * 2018-12-13 2020-05-13 株式会社東芝 観察システム
WO2021166598A1 (ja) * 2020-02-19 2021-08-26 ソニーセミコンダクタソリューションズ株式会社 生体由来物質検出用チップ、生体由来物質検出装置及び生体由来物質検出システム
TW202332779A (zh) * 2021-08-27 2023-08-16 美商伊路米納有限公司 具有減少串擾之流通槽影像感測器配置
CN115205249A (zh) * 2022-07-14 2022-10-18 中国人民解放军空军军医大学 用于胰岛素的漏液检测方法、设备及介质

Citations (2)

* Cited by examiner, † Cited by third party
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US20080274016A1 (en) * 2003-09-01 2008-11-06 Seiko Epson Corporation Biosensor and method of manufacturing biosensor
JP2009180740A (ja) * 2009-05-11 2009-08-13 Hitachi High-Technologies Corp 蛍光分析方法，蛍光分析装置及び画像検出方法

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JPS6029717A (ja) * 1983-07-28 1985-02-15 Canon Inc 水陸両用カメラの光学系
FR2797053B1 (fr) * 1999-07-13 2001-08-31 Commissariat Energie Atomique Support d'analyse a transmission de lumiere de fluorescence
US7348587B2 (en) 2001-06-28 2008-03-25 Fujifilm Corporation Method for producing biochemical analysis data and apparatus used therefor
JP3920054B2 (ja) * 2001-07-30 2007-05-30 富士フイルム株式会社 生化学解析用データの生成方法および装置
US20060014151A1 (en) * 2002-12-25 2006-01-19 Jun Ogura Optical dna sensor, dna reading apparatus, identification method of dna and manufacturing method of optical dna sensor
JP4332628B2 (ja) 2004-02-13 2009-09-16 国立大学法人 奈良先端科学技術大学院大学 生体組織測定用イメージセンサ及び該センサを用いた生体組織測定方法
JP4396407B2 (ja) * 2004-06-11 2010-01-13 カシオ計算機株式会社 生体高分子分析チップ、生体高分子チップの製造方法
JP4581498B2 (ja) * 2004-06-15 2010-11-17 カシオ計算機株式会社 生体高分子分析チップ
JP4802508B2 (ja) 2004-06-18 2011-10-26 カシオ計算機株式会社 撮像装置、生体高分子分析チップ及び分析支援装置
JP4431549B2 (ja) * 2006-05-31 2010-03-17 株式会社日立ハイテクノロジーズ 蛍光分析装置
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Patent Citations (2)

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Publication number Priority date Publication date Assignee Title
US20080274016A1 (en) * 2003-09-01 2008-11-06 Seiko Epson Corporation Biosensor and method of manufacturing biosensor
JP2009180740A (ja) * 2009-05-11 2009-08-13 Hitachi High-Technologies Corp 蛍光分析方法，蛍光分析装置及び画像検出方法

Also Published As

Publication number Publication date
EP2750190A1 (en) 2014-07-02
EP2750190B1 (en) 2019-05-08
WO2013027338A1 (ja) 2013-02-28
EP2750190A4 (en) 2015-04-08
US9324751B2 (en) 2016-04-26
JP2013045857A (ja) 2013-03-04
US20140118590A1 (en) 2014-05-01
CN103733341A (zh) 2014-04-16

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Granted publication date: 20180126

Termination date: 20210801