CN103730524A - 可提高太阳能电池功率的硅片 - Google Patents

可提高太阳能电池功率的硅片 Download PDF

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Publication number
CN103730524A
CN103730524A CN201310698726.2A CN201310698726A CN103730524A CN 103730524 A CN103730524 A CN 103730524A CN 201310698726 A CN201310698726 A CN 201310698726A CN 103730524 A CN103730524 A CN 103730524A
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China
Prior art keywords
silicon wafer
solar cell
distances
power
increasing power
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Pending
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CN201310698726.2A
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English (en)
Inventor
谭文华
谭鑫
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JINZHOU HUACHANG PHOTOVOLTANIC TECHNOLOGY Co Ltd
JINZHOU JINMAO PHOTOVOLTAIC TECHNOLOGY Co Ltd
Jinzhou Yangguang Energy Co Ltd
Original Assignee
JINZHOU HUACHANG PHOTOVOLTANIC TECHNOLOGY Co Ltd
JINZHOU JINMAO PHOTOVOLTAIC TECHNOLOGY Co Ltd
Jinzhou Yangguang Energy Co Ltd
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Application filed by JINZHOU HUACHANG PHOTOVOLTANIC TECHNOLOGY Co Ltd, JINZHOU JINMAO PHOTOVOLTAIC TECHNOLOGY Co Ltd, Jinzhou Yangguang Energy Co Ltd filed Critical JINZHOU HUACHANG PHOTOVOLTANIC TECHNOLOGY Co Ltd
Priority to CN201310698726.2A priority Critical patent/CN103730524A/zh
Publication of CN103730524A publication Critical patent/CN103730524A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Abstract

一种可提高太阳能电池功率的硅片，包括边角为圆弧的方形硅片体，其特殊之处是：硅片体的相对的二个边距离均为159-161mm，二个对角的圆弧段中心的距离为209～211mm。通过增加硅片的相对的二个边距离及对角的圆弧段中心的距离，提高了硅片的有效面积，从而实现在不增加工艺环节、不额外增加生产成本的前提下提高太阳能电池的功率，具有明显的性从比优势，适于工业上应用。

Description

可提高太阳能电池功率的硅片
技术领域
   本发明涉及一种可提高太阳能电池功率的硅片。
背景技术
   目前，太阳能电池所用硅片是由圆硅棒经过切方形成方棒，方棒横截面四角为圆弧形并经磨边处理，再用线切割机进行切片制成。该方法加工的硅片对角线长度为200mm、边长为156mm。为了提高电池功率，目前普遍采取的方法是通过电池制作工艺来提高转换效率。但是转换效率的提高受硅片本身质量、电池制作工艺及设备条件制约，提高的难度非常大，生产成本相应也较高。
发明内容
本发明是要解决现有技术存在的上述问题，提供一种不增加工艺环节、不额外增加生产成本的前提下，具有明显的性价比优势的可提高太阳能电池功率的硅片。
本发明的技术解决方案是：
可提高太阳能电池功率的硅片，包括边角为圆弧的方形硅片体，其特殊之处是：硅片体的相对的二个边距离均为159-161mm，二个对角的圆弧段中心的距离为209～211mm。
本发明的有益效果是：通过增加硅片的相对的二个边距离及对角的圆弧段中心的距离，提高了硅片的有效面积，从而实现在不增加工艺环节、不额外增加生产成本的前提下提高太阳能电池的功率，具有明显的性从比优势，适于工业上应用。
附图说明
图1是本发明的结构示意图；
图2是硅片、单片电池功率、组件功率（60片）的对照表。
具体实施方式
如图1所示，本发明包括边角为圆弧的方形硅片体1，所述硅片体1的相对的二个边101距离相等且为159-161mm，二个对角的圆弧段102中心的距离为209～211mm，本实施例中二个边101距离相等且为160mm，二个对角的圆弧段102中心的距离为210mm。
不同规格但采用相同质量、相同工艺条件制得的硅片的有效面积、对应的转化效率、单片电池功率、组件功率（60片）的对照表见图2。

Claims (1)

1.可提高太阳能电池功率的硅片，包括边角为圆弧的方形硅片体，其特征是：硅片体的相对的二个边距离均为159-161mm，二个对角的圆弧段中心的距离为209～211mm。
CN201310698726.2A 2013-12-19 2013-12-19 可提高太阳能电池功率的硅片 Pending CN103730524A (zh)

Priority Applications (1)

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CN201310698726.2A CN103730524A (zh) 2013-12-19 2013-12-19 可提高太阳能电池功率的硅片

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CN201310698726.2A CN103730524A (zh) 2013-12-19 2013-12-19 可提高太阳能电池功率的硅片

Publications (1)

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CN103730524A true CN103730524A (zh) 2014-04-16

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090056798A1 (en) * 2007-08-29 2009-03-05 Ferro Corporation Thick Film Pastes For Fire Through Applications In Solar Cells
CN202247007U (zh) * 2011-09-07 2012-05-30 太仓协鑫光伏科技有限公司 太阳能多晶硅棒
CN102945868A (zh) * 2012-10-26 2013-02-27 晶澳太阳能有限公司 正六边形晶硅太阳能硅片及由该硅片制成的太阳能电池
CN103000711A (zh) * 2011-09-17 2013-03-27 赵钧永 改进的晶体硅片、电池片及太阳能发电装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090056798A1 (en) * 2007-08-29 2009-03-05 Ferro Corporation Thick Film Pastes For Fire Through Applications In Solar Cells
CN202247007U (zh) * 2011-09-07 2012-05-30 太仓协鑫光伏科技有限公司 太阳能多晶硅棒
CN103000711A (zh) * 2011-09-17 2013-03-27 赵钧永 改进的晶体硅片、电池片及太阳能发电装置
CN102945868A (zh) * 2012-10-26 2013-02-27 晶澳太阳能有限公司 正六边形晶硅太阳能硅片及由该硅片制成的太阳能电池

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Application publication date: 20140416