CN103715152A - Connection basal plate and laminated packaging structure - Google Patents
Connection basal plate and laminated packaging structure Download PDFInfo
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- CN103715152A CN103715152A CN201210379202.2A CN201210379202A CN103715152A CN 103715152 A CN103715152 A CN 103715152A CN 201210379202 A CN201210379202 A CN 201210379202A CN 103715152 A CN103715152 A CN 103715152A
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Combinations Of Printed Boards (AREA)
Abstract
This invention provides a connection basal plate comprising an insulation basal material, a plurality of conductive columns and a heat conduction metal frame. The insulation basal material possesses a first surface and a second surface which are opposite. Many through holes going through the first surface and the second surface are formed in the insulation basal material. The plurality of conductive columns are accommodated in the through holes on one-to-one correspondence. A receiving tank is formed from the second surface of the insulation basal material to the internal of the insulation basal material. The heat conduction frame is cooperatively accommodated in the receiving tank. The invention also provides a laminated packaging structure comprising the connection basal plate.
Description
Technical field
The present invention relates to a kind of semiconductor packaging, particularly a kind of connection substrate and laminate packaging (package-on-package, POP) structure.
Background technology
Along with constantly reducing of dimensions of semiconductor devices, the laminate packaging structure with semiconductor device also little by little receives much concern.Laminate packaging structure is generally made by stacked manufacture method.In traditional stacked manufacture method, in order to realize High Density Integration and small size, to install, the soldered ball that is 200 microns to 300 microns by diameter is conventionally electrically connected to upper and lower two packagings.Yet, diameter is that not only volume is larger for the soldered ball of 200 microns to 300 microns, and easily between the connected electric contact mat of soldered ball, produce and rupture, therefore, not only make the area of pad corresponding with tin ball on lower packaging also larger, and then be difficult to dwindle the volume of laminate packaging structure, and rate of finished products and the reliability of laminate packaging structure have been reduced.Lower packaging is packaged between upper and lower two circuit boards, and the heat of its generation is also not easy to exhale, and the thermal diffusivity of lower packaging is poor, affects whole laminate packaging structure useful life.
Summary of the invention
The invention provides a kind of reliability is higher and thermal diffusivity is good connection substrate and laminate packaging structure.
A connection substrate, it comprises insulating substrate, a plurality of conductive pole and heat-conducting metal frame.Described insulating substrate has relative first surface and second surface, in described insulating substrate, be formed with a plurality of a plurality of through holes that run through described first surface and second surface, described a plurality of conductive pole is contained in a plurality of through holes correspondingly, second surface from described insulating substrate is inner to insulating substrate, be formed with accepting groove, described heat-conducting metal frame cooperation is contained in described accepting groove.
A kind of laminate packaging structure, it comprises the first base plate for packaging, be packaged in the first chip of the first base plate for packaging, the second base plate for packaging, be packaged in the second chip of the second base plate for packaging, the first welding material, the second welding material and described connection substrate, described the first base plate for packaging is arranged at second surface one side of described connection substrate, the surface that described the first base plate for packaging contacts with connection substrate has a plurality of the 3rd electric contact mats and a plurality of the 4th electric contact mat, described the first chip is electrically connected to the first base plate for packaging by a plurality of the 3rd electric contact mats, described in each, one end of conductive pole is electrically connected to mutually by the first welding material the 3rd electric contact mat corresponding with, described the first chip is contained in the heat-conducting metal frame of described connection substrate, described the second base plate for packaging is arranged at a side of the first surface of connection substrate, described the second base plate for packaging has and a plurality of conductive poles the 7th electric contact mat one to one, the other end of each conductive pole is electrically connected to the 7th corresponding electric contact mat by the second welding material.
The connection substrate that the technical program provides, its inside is formed with heat-conducting metal frame, for the heat of accommodating chip and chip is produced, conducts fast.The laminate packaging mechanism that the technical program provides, because the first chip is contained in the heat-conducting metal frame of connection substrate, thereby the heat that the first chip produces can conduct out from the first chip rapidly, make the first chip in use can excess Temperature, improve the useful life of the first chip.
Accompanying drawing explanation
The generalized section of the connection substrate that Fig. 1 provides for the technical program the first embodiment.
Fig. 2 is the vertical view of Fig. 1.
Fig. 3-5 are respectively the generalized section of the other connection substrate that the technical program the first embodiment provides.
Fig. 6-8 are respectively the generalized section of the connection substrate that the technical program the second embodiment provides.
Fig. 9-10 are respectively the generalized section of the connection substrate that the technical program the 3rd embodiment provides.
The generalized section of the connection substrate that Figure 11 provides for the technical program the 4th embodiment.
The generalized section of the connection substrate that Figure 12 provides for the technical program the 5th embodiment.
Figure 13-14 are respectively the generalized section of the connection substrate that the technical program the 6th embodiment provides.
Figure 15-17 are respectively the generalized section of the laminate packaging structure that the technical program provides.
Main element symbol description
| |
10 |
| The first base plate for |
20 |
| The |
21 |
| The |
2110 |
| The |
2120 |
| The first |
22 |
| The 3rd |
2210 |
| The 4th |
2220 |
| The second |
23 |
| The 5th |
2310 |
| The first |
24 |
| The second |
25 |
| |
26 |
| The |
30 |
| Conductive |
31 |
| The |
32 |
| The second base plate for |
40 |
| The |
42 |
| The |
421 |
| The 6th surface | 422 |
| The 3rd |
43 |
| The 6th |
431 |
| The 4th conductive circuit pattern | 44 |
| The 7th |
441 |
| The 3rd |
45 |
| The 4th welding resisting layer | 46 |
| Conductive hole | 47 |
| The |
50 |
| |
501 |
| The |
502 |
| The |
60 |
| The |
70 |
| |
100、100a、100b、100c、200、200a、200b、300、300a、400、500、500a、600 |
| |
110、210、310、410、510、610 |
| First |
111、211、511、611 |
| Second |
112、212、512 |
| Through hole | 113、213、513 |
| Accepting |
114、214、514 |
| Diapire | 1141、5141 |
| Sidewall | 1142、5142 |
| Conductive pole | 120、220、320、420、520、620 |
| The first end face | 121、251、521 |
| The second end face | 122、222、522、622 |
| Heat-conducting |
130、230、330、430、530、630 |
| |
131、531 |
| Side |
132、532 |
| Bottom |
1321、5321、6321 |
| The first |
150、260、350、460、550、660 |
| The second |
160、270、360、470 |
| The |
2131 |
| The second hole section | 2132 |
| Conductive |
250、450、650 |
| Thermally |
340、440、540、640 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Below in conjunction with drawings and Examples, the connection substrate that the technical program is provided and laminate packaging structure are described in further detail.
See also Fig. 1 and Fig. 2, the technical program the first embodiment provides a kind of connection substrate 100, and connection substrate 100 comprises insulating substrate 110, a plurality of conductive pole 120 and heat-conducting metal frame 130.
Insulating substrate 110 has relative first surface 111 and second surface 112.In insulating substrate 110, be formed with a plurality of a plurality of through holes 113 that are separated from each other that run through first surface 111 and second surface 112.From second surface 112, to insulating substrate 110, be also formed with accepting groove 114.In the present embodiment, the receiving space that accepting groove 114 forms is cuboid, and described accepting groove 114 is for accommodating electronic device.Accepting groove 114 have diapire 1141 and with diapire 1,141 four four sidewalls 1142 connected vertically successively connected vertically.Diapire 1141 is parallel with second surface 112, and four sidewalls 1142 are connected between diapire 1141 and second surface 112.The shape of the electronic device that the shape of accepting groove 114 can need to be accommodated according to it is set.A plurality of through holes 113 arrange around described accepting groove 114, and are not interconnected with accepting groove 114.
A plurality of conductive poles 120 are formed in a plurality of through holes 113 correspondingly.Each conductive pole 120 has the first relative end face 121 and the second end face 122.In the present embodiment, the length of each conductive pole 120 all equates with the thickness of insulating substrate 110.The first end face 121 is concordant with first surface 111.The second end face 122 is concordant with second surface 112.
Heat-conducting metal frame 130 is contained in accepting groove 114.The peripheral shape of heat-conducting metal frame 130 is corresponding with the shape of accepting groove 114.In the present embodiment, heat-conducting metal frame 130 comprise top board 131 and with mutual four side plates 132 connected vertically of top board 131.Top board 131 contacts with 1141 of the diapires of accepting groove 114, four side plates 132 correspondingly with four sidewalls 1142 of accepting groove 114 to contacting.In the present embodiment, each side plate 132 has the bottom surface 1321 away from top board 131.Bottom surface 1321 is concordant with second surface 112.Heat-conducting metal frame 130 adopts heat-conducting metal, as copper, aluminium and silver etc. are made.Preferably, the material of heat-conducting metal frame 130 is identical with the material of conductive pole 120, all adopts metallic copper to make.
See also Fig. 3 to Fig. 5, connection substrate 100 can also comprise a plurality of the first electric contact mats 150 and/or a plurality of the second electric contact mat 160.
Refer to Fig. 3, connection substrate 100a comprises a plurality of the first electric contact mats 150.Each first electric contact mat 150 is all electrically connected to a conductive pole 120.The first electric contact mat 150 is formed at first surface 111.Preferably, the conductive pole 120 that each first electric contact mat 150 is electrically connected to mutually with it is integrally formed.
Refer to Fig. 4, connection substrate 100b comprises a plurality of the second electric contact mats 160.Each second electric contact mat 160 is all electrically connected to a conductive pole 120.The second electric contact mat 160 is formed at second surface 112.Preferably, the conductive pole 120 that each second electric contact mat 160 is electrically connected to mutually with it is integrally formed.
Refer to Fig. 5, connection substrate 100c comprises a plurality of the first electric contact mats 150 and a plurality of the second electric contact mat 160.Each first electric contact mat 150 is all electrically connected to a conductive pole 120.The first electric contact mat 150 is formed at first surface 111.Each second electric contact mat 160 is all electrically connected to a conductive pole 120.The second electric contact mat 160 is formed at second surface 112.Refer to Fig. 6, the technical program the second embodiment provides a kind of connection substrate 200, and the structure of the connection substrate 100 that the structure of connection substrate 200 and the first embodiment provide is close.Connection substrate 200 comprises insulating substrate 210, a plurality of conductive pole 220, a plurality of conductive blind hole 250 and heat-conducting metal frame 230.
A plurality of conductive poles 220 and a plurality of conductive blind hole 250 are formed in a plurality of through holes 213 correspondingly.Wherein, the shape of each conductive pole 220 is corresponding with the shape of the second hole section 2132, and the shape of each conductive blind hole 250 is corresponding with the shape of the first hole section 2131.Each conductive blind hole 250 is electrically connected to mutually with corresponding conductive pole 220.Each conductive blind hole 250 is round table-like, and its correspondence is contained in the first hole section 2131 of a through hole 213, and each conductive pole 220 correspondence is contained in the second hole section 2132 of a through hole 213.Conducting electricity each conductive pole 220 has the second end face 222 away from corresponding conductive blind hole 250, and each conductive blind hole 250 has the first end face 251 away from corresponding conductive pole 220.In the present embodiment, the thickness sum of the conductive blind hole 250 of the height of each conductive pole 120 and correspondence equates with the thickness of insulating substrate 110.The first end face 251 is concordant with first surface 211.The second end face 222 is concordant with second surface 212.
Heat-conducting metal frame 230 is contained in accepting groove 214.The peripheral shape of heat-conducting metal frame 230 is corresponding with the shape of accepting groove 214.Heat-conducting metal frame 230 adopts heat-conducting metal, as copper, aluminium and silver etc. are made.Preferably, the material of heat-conducting metal frame 230 is identical with the material of conductive pole 220, all adopts metallic copper to make.
Be understandable that, connection substrate 200a as shown in Figure 7, it can comprise a plurality of the first electric contact mats 260.Each first electric contact mat 260 is all electrically connected to a conductive blind hole 250.The first electric contact mat 260 is formed at first surface 211.Preferably, the conductive blind hole 250 that each first electric contact mat 260 is electrically connected to mutually with it is integrally formed.Refer to Fig. 8, connection substrate 200b also comprises a plurality of the second electric contact mats 270.Each second electric contact mat 270 is all electrically connected to a conductive pole 220.The second electric contact mat 270 is formed at second surface 212.
Refer to Fig. 9, the technical program the 3rd embodiment provide a kind of connection substrate 300, the structure of the connection substrate 100 that the structure of connection substrate 300 and the first embodiment provide is close, and connection substrate 300 comprises insulating substrate 310, a plurality of conductive pole 320, heat-conducting metal frame 330 and thermally conductive interface 340.
The structure of the connection substrate 100 that wherein, the structure of insulating substrate 310, conductive pole 320 and heat-conducting metal frame 330 provides with the first embodiment is identical.
Thermally conductive interface 340 is arranged in insulating substrate 310, and thermally conductive interface 340 is connected between heat-conducting metal frame 330 and partially conductive post 320.For the heat of heat-conducting metal frame 330 is sent to connected conductive pole 320, so that the distributing of heat.Be understandable that, one end or the two ends of the conductive pole 320 of the connection substrate 300 of the present embodiment also can form electric contact mat.Refer to Figure 10, the two ends of the conductive pole 320 of connection substrate 300a form respectively the first electric contact mat 350 and the second electric contact mat 360.
Refer to Figure 11, the technical program the 4th embodiment provide a kind of connection substrate 400, the structure of the connection substrate 200 that the structure of connection substrate 400 and the second embodiment provide is close, and connection substrate 400 comprises insulating substrate 410, a plurality of conductive pole 420, a plurality of conductive blind hole 450, heat-conducting metal frame 430 and thermally conductive interface 440.
The structure of the connection substrate 200 that wherein, the structure of insulating substrate 410, conductive pole 420, conductive blind hole 450 and heat-conducting metal frame 430 provides with the second embodiment is identical.
Thermally conductive interface 440 is arranged in insulating substrate 410, and thermally conductive interface 440 is connected between heat-conducting metal frame 430 and partially conductive post 420.For the heat of heat-conducting metal frame 430 is sent to connected conductive pole 420, so that the distributing of heat.
Be understandable that, one end of the conductive pole 420 of the connection substrate 400 of the present embodiment forms the second electric contact mat 470, and one end of conductive blind hole 450 forms the first electric contact mat 460.
Refer to Figure 12, the technical program the 5th embodiment provide a kind of connection substrate 500, the structure of the connection substrate 100 that the structure of connection substrate 500 and the first embodiment provide is close, and connection substrate 500 comprises insulating substrate 510, a plurality of conductive pole 520 and heat-conducting metal frame 530.
Insulating substrate 510 has relative first surface 511 and second surface 512.In insulating substrate 510, be formed with a plurality of a plurality of through holes 513 that are separated from each other that run through first surface 511 and second surface 512.From second surface 512, to insulating substrate 510, be also formed with accepting groove 514.Described accepting groove 514 is for accommodating electronic device.Accepting groove 514 have diapire 5141 and with diapire 5,141 four four sidewalls 5142 connected vertically successively connected vertically.Diapire 5141 is parallel with second surface 512, and four sidewalls 5142 are connected between diapire 5141 and second surface 512.The shape of the electronic device that the shape of accepting groove 514 can need to be accommodated according to it is set.A plurality of through holes 513 arrange around described accepting groove 514, and are not interconnected with accepting groove 514.
A plurality of conductive poles 520 are formed in a plurality of through holes 513 correspondingly.Each conductive pole 520 has the first relative end face 521 and the second end face 522.In the present embodiment, the length of each conductive pole 520 is all greater than the thickness of insulating substrate 110.The first end face 521 is concordant with first surface 511.The second end face 522 protrudes from second surface 512.
Heat-conducting metal frame 530 is contained in accepting groove 514.The peripheral shape of heat-conducting metal frame 530 is corresponding with the shape of accepting groove 514.In the present embodiment, heat-conducting metal frame 530 comprise top board 531 and with mutual four side plates 532 connected vertically of top board 531.Top board 531 contacts with the diapire 5141 of accepting groove 514, four side plates 532 correspondingly with four sidewalls 5142 of accepting groove 514 to contacting.In the present embodiment, each side plate 532 has the bottom surface 5321 away from top board 531.Bottom surface 5321 also protrudes from second surface 512.Heat-conducting metal frame 530 adopts heat-conducting metal, as copper, aluminium and silver etc. are made.Preferably, the material of heat-conducting metal frame 530 is identical with the material of conductive pole 520, all adopts metallic copper to make.
Be understandable that, refer to Figure 13, the first end face 521 of the conductive pole 520 of the connection substrate 500a office of the present embodiment can form the first electric contact mat 550.And connection substrate 500 also can be formed with thermally conductive interface 540, to connect heat-conducting metal frame 530 and partially conductive post 520.
Refer to Figure 14, the technical program the 6th embodiment provide a kind of connection substrate 600, the structure of the connection substrate 400 that the structure of connection substrate 600 and the second embodiment provide is close, and connection substrate 600 comprises insulating substrate 610, a plurality of conductive pole 620, a plurality of conductive blind hole 650, heat-conducting metal frame 630 and thermally conductive interface 640.Difference is, the second end face 622 of conductive pole 620 and the bottom surface 6321 of heat-conducting metal frame 630 all protrude from second surface 612.
Be understandable that, the end face that the conductive blind hole 650 of the connection substrate 600 of the present embodiment exposes from first surface 611 can form the first electric contact mat 660.
Be understandable that, the connection substrate that the technical program the first embodiment to the six embodiment provide all can comprise welding resisting layer, described welding resisting layer is formed at the first surface of insulating substrate, is formed with a plurality of openings in described welding resisting layer, and the first electric contact mat is exposed from corresponding opening.
Refer to Figure 15, the technical program the 7th embodiment provide a kind of laminate packaging structure 10, and it comprises the first base plate for packaging 20, is packaged in the first chip 30 of the first base plate for packaging 20, the second base plate for packaging 40, be packaged in any one connection substrate that the second chip 50, the first welding material 60, the second welding material 70 and the technical program first embodiment to the six embodiment of the second base plate for packaging 40 provide.In the present embodiment, the connection substrate 100c as shown in Figure 5 that the technical program the first embodiment of take provides describes as example.
The first base plate for packaging 20 comprise the first basalis 21, be respectively arranged at two the first surperficial conductive circuit pattern 22 and the second conductive circuit pattern 23 that this first basalis 21 is relative and be formed at respectively this first conductive circuit pattern 22 and the second conductive circuit pattern 23 on the first welding resisting layer 24 and the second welding resisting layer 25 and a plurality of tin ball 26.
This first basalis 21 is multilager base plate, comprises a plurality of layers of resin bed and a plurality of layers of conductive circuit pattern (not shown) of alternative arrangement.This first basalis 21 comprises relative the 2110 and the 4th surface 2120, the 3rd surface, this first conductive circuit pattern 22 is arranged on the 3rd surface 2110 of this first basalis 21, and this second conductive circuit pattern 23 is arranged on the 4th surface 2120 of this first basalis 21.Between a plurality of layers of conductive circuit pattern of this first basalis 21 and a plurality of layers of conductive circuit pattern of this first basalis 21 by conductive hole (not shown), be electrically connected to respectively with this first conductive circuit pattern 22 and the second conductive circuit pattern 23.
This this first conductive circuit pattern 22 of the first welding resisting layer 24 cover parts and the 3rd surface 2110 of exposing from this first conductive circuit pattern 22, this first conductive circuit pattern 22 of part is exposed from this first welding resisting layer 24, formed a plurality of the 3rd electric contact mats 2210 and a plurality of the 4th electric contact mat 2220.The 3rd electric contact mat 2210 is array arranges, and the plurality of the 4th electric contact mat 2220 arranges around the plurality of the 3rd electric contact mat 2210, and the plurality of the 4th electric contact mat 2220 is arranged at the surrounding of the plurality of the 3rd electric contact mat 2210.
This this second conductive circuit pattern 23 of the second welding resisting layer 25 cover parts and the 4th surface 2120 of exposing from this second conductive circuit pattern 23, this second conductive circuit pattern 23 of part is exposed from this second welding resisting layer 25, forming a plurality of the 5th electric contact mat 2310, the five electric contact mats 2310 is array and arranges.Conducting wire by the first conductive circuit pattern 22, the second conductive circuit pattern 23 of the plurality of the 3rd electric contact mat 2210 and a plurality of the 4th electric contact mat 2220 and the conductive circuit pattern in the first basalis 21 and conductive hole are electrically connected to the plurality of the 5th electric contact mat 2310.
A plurality of tin balls 26 are formed on a plurality of the 5th electric contact mats 2310 correspondingly.
The first chip 30 is packaged in a side of the first welding resisting layer 24 of the first base plate for packaging 20.In the present embodiment, the first chip 30 is bonded in the first welding resisting layer 24 surfaces of the first base plate for packaging 20 by the first packing colloid 32.Described the first packing colloid 32 adopts high heat radiation sticky material to make, and it can be heat-conducting glue.Described the first chip 30 is loaded on described the first base plate for packaging 20 by chip package technology structure.The first chip 30 has a plurality of and the 3rd electric contact mat 2210 a plurality of electrical connection pad (not shown) one to one, passes through conductive blind hole 31 and be mutually electrically connected between the 3rd electric contact mat 2210 and corresponding electrical connection pad.Be understandable that, described conductive blind hole 31 can be tin ball or copper cream, also can mutually combine for metallic conduction post and tin ball, or copper cream and copper conductive blind hole mutually combines.
The second electric contact mat 160 of connection substrate 100c is corresponding one by one with the 4th electric contact mat 2220 of the first base plate for packaging 20.Corresponding second electric contact mat 160 is electrically connected to by the first welding material 60 mutually with the 4th electric contact mat 2220 mutually.The first chip 30 is contained in described heat-conducting metal frame 130.In order to improve thermally conduction efficiency, between heat-conducting metal frame 130 and the first chip 30, be also formed with the second encapsulation film 33.Described the second encapsulation film 33 also adopts high heat radiation sticky material to make, and it can be heat-conducting glue.
The second base plate for packaging 40 is formed at connection substrate 100 away from a side of the first base plate for packaging 20.The second base plate for packaging 40 comprise the second basalis 42, be respectively arranged at two the 3rd surperficial conductive circuit pattern 43 and the 4th conductive circuit pattern 44 that this second basalis 42 is relative and be formed at respectively the 3rd conductive circuit pattern 43 and the 4th conductive circuit pattern 44 on the 3rd welding resisting layer 45 and the 4th welding resisting layer 46.
This second basalis 42 is drawn together relative the 421 and the 6th surface 422, the 5th surface, the 3rd conductive circuit pattern 43 is arranged on the 5th surface 421 of this second basalis 42, and the 4th conductive circuit pattern 44 is arranged on the 6th surface 422 of this second basalis 42.The 3rd conductive circuit pattern 43 conducts by a plurality of conductive holes 47 with the 4th conductive circuit pattern 44.
The 3rd welding resisting layer 45 cover parts the 3rd conductive circuit pattern 43 and the 5th surface 421 of exposing from the 3rd conductive circuit pattern 43, make part the 3rd conductive circuit pattern 43 expose from the 3rd welding resisting layer 45, forms a plurality of the 6th electric contact mats 431.The surface of the 3rd welding resisting layer 45 has chip fixed area for chip is fixed thereon.The plurality of the 6th electric contact mat 431 arranges around this chip fixed area.
The 6th surface 422 of the 4th welding resisting layer 46 cover parts the 4th conductive circuit pattern 44 and the second basalis 42 of exposing from the 4th conductive circuit pattern 44, part the 4th conductive circuit pattern 44 is exposed from the 4th welding resisting layer 46, form a plurality of the 7th electric contact mats 441, the plurality of the 7th electric contact mat 441 is corresponding one by one with the plurality of the first electric contact mat 150.The plurality of the 6th electric contact mat 431 conducts with the plurality of the 7th electric contact mat 441 by conducting wire and the conductive hole 47 of the 3rd conductive circuit pattern 43 and the 4th conductive circuit pattern 44.The 7th electric contact mat 441 is corresponding one by one with a plurality of the first electric contact mats 150, and the 7th electric contact mat 441 that each first electric contact mat 150 is corresponding with it is electrically connected to mutually by the second welding material 70.
The 3rd conductive circuit pattern 43 and the 4th conductive circuit pattern 44 can adopt the method for selective etch copper layer to make.In the present embodiment, this second base plate for packaging 40 is double-sided wiring board, and certainly, this second base plate for packaging 40 also can be for conductive circuit pattern be more than two-layer multi-layer sheet, the second basalis 42 can be multilager base plate, comprises the multi-layer resinous layer and multilayer conductive circuit figure of alternative arrangement.
The second chip 50 is packaged in the surface of the 3rd welding resisting layer 45 of the second base plate for packaging 40.In the present embodiment, this second chip 50 is wire bonding (wire bonding, WB) chip, and the second chip 50 and the 6th electric contact mat 431 are electrically connected.Concrete, a plurality of the bonding leads 501 that the second chip 50 has a plurality of bond contacts and extends from a plurality of bond contacts, bonding lead 501 is corresponding one by one with the 6th electric contact mat 431.One end of a plurality of bonding leads 501 is electrically connected this second chip 50, and the other end is electrically connected respectively the plurality of the 6th electric contact mat 431, thereby the second chip 50 is electrically connected to the 3rd conductive circuit pattern 43.
Preferably, this second chip 50 is fixed on the chip fixed area on the 3rd welding resisting layer 45 surfaces by an adhesive-layer, and this bonding lead 501 can be connected in the 6th electric contact mat 431 by the mode of welding.The material of this bonding lead 501 is generally gold.In the present embodiment, adopt the 3rd welding resisting layer 45 and the 6th electric contact mat 431 surfaces that the 3rd packing colloid 502 exposes bonding lead 501, the second chip 50 and the second base plate for packaging 40 to be coated encapsulation.This bonding lead 501, the second chip 50 are all coated in the 3rd packing colloid 502 completely.In the present embodiment, the 3rd packing colloid 502 is black glue, and certainly, the 3rd packing colloid 502 also can other packing colloid material, with the present embodiment, is not limited.
Be understandable that, when the cross-sectional area of connection substrate 100c and the second base plate for packaging 40 is less than the cross-sectional area of the first base plate for packaging 20, can also form in the side of connection substrate 100c and the second base plate for packaging 40 the 3rd packing colloid 502, thus connection substrate 100c and the second base plate for packaging 40 is also coated by the 3rd packing colloid 502.
The laminate packaging structure 10 that the technical program provides, because the first chip 30 is contained in the heat-conducting metal frame 130 of connection substrate 100c, the heat that the first chip 30 produces in the course of the work can be passed to heat-conducting metal frame 130 fast, and be sent to the insulating substrate 110 of connection substrate 100c, make heat rapid diffusion go out laminate packaging structure 10, thereby can improve the conduction velocity of the heat of the first chip 30 generations.
Be understandable that, as shown in figure 16, the connection substrate that the laminate packaging structure that the technical program provides also can adopt the technical program the 3rd embodiment to provide, between heat-conducting metal frame 130 and partially conductive post 120, form thermally conductive interface 140, thereby the heat that the first chip 30 is produced can be passed to conductive pole 120 by heat-conducting metal frame 130, and conduction causes the first base plate for packaging 20 and the second base plate for packaging 40, further improve the conduction velocity of the heat that the first chip 30 produces.
As shown in figure 17, the connection substrate that the laminate packaging structure that the technical program provides also can adopt the technical program the 5th embodiment to provide, conductive pole 120 and heat-conducting metal frame 130 protrude from second surface 1112.The first welding material 60 is connected in the part that protrudes from second surface 1112 with conductive pole 120 and is mutually electrically connected to the 4th electric contact mat 2220.
The connection substrate that the laminate packaging structure that the technical program provides also can adopt the technical program second, four and six embodiment to provide, be in connection substrate, also to comprise conductive blind hole, the 7th electric contact mat 441 of the second base plate for packaging 40 passes through the second welding material 70 mutually to being electrically connected to corresponding conductive blind hole or the first electric contact mat 150 being formed on conductive blind hole.
The connection substrate that the technical program provides, its inside is formed with heat-conducting metal frame, for the heat of accommodating chip and chip is produced, conducts fast.The laminate packaging mechanism that the technical program provides, because the first chip is contained in the heat-conducting metal frame of connection substrate, thereby the heat that the first chip produces can conduct out from the first chip rapidly, make the first chip in use can excess Temperature, improve the useful life of the first chip.
Be understandable that, for the person of ordinary skill of the art, can individual according to technical conceive of the present invention, make other various corresponding changes and distortion, and all these change and distortion all should belong to the protection range of the claims in the present invention.
Claims (16)
1. a connection substrate, it comprises insulating substrate, a plurality of conductive pole and heat-conducting metal frame, described insulating substrate has relative first surface and second surface, in described insulating substrate, be formed with a plurality of a plurality of through holes that run through described first surface and second surface, described a plurality of conductive pole is contained in a plurality of through holes correspondingly, second surface from described insulating substrate is inner to insulating substrate, is formed with accepting groove, and described heat-conducting metal frame cooperation is contained in described accepting groove.
2. connection substrate as claimed in claim 1, it is characterized in that, the height of described conductive pole equates with the thickness of insulating substrate, and described insulating substrate has the first relative end face and the second end face, described the first end face is concordant with described first surface, and described the second end face is concordant with second surface.
3. connection substrate as claimed in claim 1, it is characterized in that, the height of described conductive pole is greater than the thickness of insulating substrate, and described insulating substrate has the first relative end face and the second end face, described the first end face is concordant with first surface, and described the second end face protrudes from described second surface.
4. connection substrate as claimed in claim 1, is characterized in that, described connection substrate also comprises thermally conductive interface, and described thermally conductive interface is connected between heat-conducting metal frame and partially conductive post.
5. connection substrate as claimed in claim 1, is characterized in that, described connection substrate also comprises a plurality of the first electric contact mats that are formed at described first surface, a plurality of the first electric contact mats and the corresponding and electrical connection mutually one by one of a plurality of conductive poles.
6. connection substrate as claimed in claim 5, is characterized in that, described in each, the first electric contact mat is integrally formed with corresponding conductive pole.
7. connection substrate as claimed in claim 5, is characterized in that, described connection substrate also comprises a plurality of the second electric contact mats that are formed at second surface, described the second electric contact mat and the corresponding and electrical connection mutually one by one of a plurality of conductive poles.
8. connection substrate as claimed in claim 7, is characterized in that, the conductive pole of the first electric connection pad described in each, correspondence and the second corresponding electric connection pad are integrally formed.
9. connection substrate as claimed in claim 5, it is characterized in that, described first surface is also formed with the first welding resisting layer, is formed with a plurality of and the first electric contact mat the first opening one to one in described the first welding resisting layer, and each first electric contact mat exposes from the first opening of correspondence.
10. connection substrate as claimed in claim 1, it is characterized in that, described connection substrate also comprises the conductive blind hole that a plurality of and a plurality of conductive poles connect one to one, from first surface to second surface, described through hole comprises interconnective the first hole section and the second hole section, described conductive blind hole is round table-like, and described conductive blind hole is contained in the first hole section, and described conductive blind hole is contained in the second hole section.
11. connection substrates as claimed in claim 10, it is characterized in that, described conductive blind hole has the first end face away from corresponding conductive pole, described conductive pole has the second end face away from described conductive blind hole, described the first end face is concordant with first surface, and described the second end face is concordant with second surface.
12. connection substrates as claimed in claim 10, it is characterized in that, described conductive blind hole has the first end face away from corresponding conductive pole, described conductive pole has the second end face away from described conductive blind hole, described the first end face is concordant with first surface, and described the second end face protrudes from described second surface.
13. connection substrates as claimed in claim 10, is characterized in that, described connection substrate also comprises thermally conductive interface, and described thermally conductive interface is connected between heat-conducting metal frame and partially conductive post.
14. 1 kinds of laminate packaging structures, it comprises the first base plate for packaging, be packaged in the first chip of the first base plate for packaging, the second base plate for packaging, be packaged in the second chip of the second base plate for packaging, the first welding material, the second welding material and the connection substrate as described in claim 1 to 13 any one, described the first base plate for packaging is arranged at second surface one side of described connection substrate, the surface that described the first base plate for packaging contacts with connection substrate has a plurality of the 3rd electric contact mats and a plurality of the 4th electric contact mat, described the first chip is electrically connected to the first base plate for packaging by a plurality of the 3rd electric contact mats, described in each, one end of conductive pole is electrically connected to mutually by the first welding material the 3rd electric contact mat corresponding with, described the first chip is contained in the heat-conducting metal frame of described connection substrate, described the second base plate for packaging is arranged at a side of the first surface of connection substrate, described the second base plate for packaging has and a plurality of conductive poles the 7th electric contact mat one to one, the other end of each conductive pole is electrically connected to the 7th corresponding electric contact mat by the second welding material.
15. laminate packaging structures as claimed in claim 14, is characterized in that, between described the first chip and heat-conducting metal frame, are filled with packing colloid, and described packing colloid adopts high heat radiation sticky material to make.
16. laminate packaging structures as claimed in claim 14, is characterized in that, described the first base plate for packaging has a plurality of the 4th electric contact mats away from the surface of connection substrate, described in each, on the 4th electric contact mat, is formed with tin ball.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210379202.2A CN103715152B (en) | 2012-10-09 | 2012-10-09 | Connect substrate and package-on-package structure |
| TW101137856A TWI495078B (en) | 2012-10-09 | 2012-10-12 | Connecting substrate and package on package structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210379202.2A CN103715152B (en) | 2012-10-09 | 2012-10-09 | Connect substrate and package-on-package structure |
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| CN103715152A true CN103715152A (en) | 2014-04-09 |
| CN103715152B CN103715152B (en) | 2016-08-24 |
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| CN201210379202.2A Active CN103715152B (en) | 2012-10-09 | 2012-10-09 | Connect substrate and package-on-package structure |
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| CN (1) | CN103715152B (en) |
| TW (1) | TWI495078B (en) |
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| CN107123601A (en) * | 2017-05-27 | 2017-09-01 | 华进半导体封装先导技术研发中心有限公司 | A kind of high radiating element encapsulating structure and board level manufacturing method |
| CN110010491A (en) * | 2018-12-25 | 2019-07-12 | 杭州臻镭微波技术有限公司 | A kind of manufacture craft of multiple-level stack radio frequency micro-system cube structure |
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| TWI552290B (en) * | 2014-04-22 | 2016-10-01 | 矽品精密工業股份有限公司 | Package substrate and manufacturing method thereof |
| TWI730891B (en) * | 2019-09-08 | 2021-06-11 | 聯發科技股份有限公司 | A semiconductor package structure |
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| CN110010491A (en) * | 2018-12-25 | 2019-07-12 | 杭州臻镭微波技术有限公司 | A kind of manufacture craft of multiple-level stack radio frequency micro-system cube structure |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN103715152B (en) | 2016-08-24 |
| TWI495078B (en) | 2015-08-01 |
| TW201415603A (en) | 2014-04-16 |
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Effective date of registration: 20240206 Address after: 18-2 Tengfei Road, Economic and Technological Development Zone, Qinhuangdao City, Hebei Province Patentee after: Liding semiconductor technology Qinhuangdao Co.,Ltd. Country or region after: China Patentee after: Zhen Ding Technology Co.,Ltd. Country or region after: Taiwan, China Address before: 066004 No. 18-2, Tengfei Road, Qinhuangdao Economic and Technological Development Zone, Hebei Province Patentee before: Liding semiconductor technology Qinhuangdao Co.,Ltd. Country or region before: China Patentee before: Qi Ding Technology Qinhuangdao Co.,Ltd. Patentee before: Zhen Ding Technology Co.,Ltd. Country or region before: Taiwan, China |