TWI552290B - Package substrate and manufacturing method thereof - Google Patents

Package substrate and manufacturing method thereof Download PDF

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Publication number
TWI552290B
TWI552290B TW103114466A TW103114466A TWI552290B TW I552290 B TWI552290 B TW I552290B TW 103114466 A TW103114466 A TW 103114466A TW 103114466 A TW103114466 A TW 103114466A TW I552290 B TWI552290 B TW I552290B
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Taiwan
Prior art keywords
conductive
package
layer
conductive portion
package substrate
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TW103114466A
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Chinese (zh)
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TW201541584A (en
Inventor
唐紹祖
何祈慶
蔡瀛洲
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矽品精密工業股份有限公司
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Priority to TW103114466A priority Critical patent/TWI552290B/en
Priority to CN201410192736.3A priority patent/CN105023899B/en
Priority to US14/461,828 priority patent/US9265154B2/en
Publication of TW201541584A publication Critical patent/TW201541584A/en
Application granted granted Critical
Publication of TWI552290B publication Critical patent/TWI552290B/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/18Printed circuits structurally associated with non-printed electric components
    • H05K1/182Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H05K1/186Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or connecting to patterned circuits before or during embedding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/11Printed elements for providing electric connections to or between printed circuits
    • H05K1/115Via connections; Lands around holes or via connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40Capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10007Types of components
    • H05K2201/10015Non-printed capacitor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0703Plating
    • H05K2203/0733Method for plating stud vias, i.e. massive vias formed by plating the bottom of a hole without plating on the walls
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Description

封裝基板及其製法 Package substrate and its preparation method

本發明係有關於一種封裝基板及其製法,尤指一種具有電子元件的封裝基板及其製法。 The present invention relates to a package substrate and a method of fabricating the same, and more particularly to a package substrate having electronic components and a method of fabricating the same.

如第1圖所示,習知之模壓式內部連接型系統(molded interconnection system,簡稱MIS)的封裝基板係將複數第一導電部11連接複數金屬柱12,並將該複數金屬柱12連接複數第二導電部13,再以封裝體14包覆該第一導電部11與金屬柱12;然而,該金屬柱12的高寬比太大時,電鍍該金屬柱12的效果不佳,但現今的電容高度的規格通常都在110微米(μm)以上,因此,如果要在前述封裝基板中嵌埋電容,則必須增加該金屬柱12之高度。 As shown in FIG. 1 , a conventional packaged substrate of a molded interconnect system (MIS) connects a plurality of first conductive portions 11 to a plurality of metal pillars 12, and connects the plurality of metal pillars 12 to a plurality of The second conductive portion 13 is further covered with the first conductive portion 11 and the metal pillar 12 by the package 14; however, when the aspect ratio of the metal pillar 12 is too large, the effect of plating the metal pillar 12 is not good, but nowadays The specification of the height of the capacitor is usually 110 μm or more. Therefore, if a capacitor is to be embedded in the package substrate, the height of the metal pillar 12 must be increased.

為了增加該金屬柱12之高度,業界遂進行改良,如第2圖所示,將金屬柱12分成第一子金屬柱121與第二子金屬柱122兩段並分開電鍍製作。但是,製作步驟越多,累積的製造公差就越多,為了維持第二導電部13的原有面積,該第一子金屬柱121之範圍就必須大於該第二子金屬柱122之範圍,以利該第一子金屬柱121提供該第二子金 屬柱122足夠的對位裕度;同理,為了使該第一導電部11提供該第一子金屬柱121足夠的對位裕度,該第一導電部11之範圍也必須大於該第一子金屬柱121之範圍,這大幅增加該第一導電部11的面積,進而限縮了可用的佈線空間。 In order to increase the height of the metal post 12, the industry has improved. As shown in Fig. 2, the metal post 12 is divided into two sections of a first sub-metal post 121 and a second sub-metal post 122 and separately plated. However, the more the manufacturing steps, the more the manufacturing tolerances are accumulated. In order to maintain the original area of the second conductive portion 13, the range of the first sub-metal pillar 121 must be larger than the range of the second sub-metal pillar 122. The first sub-metal pillar 121 provides the second sub-gold The column 122 has a sufficient alignment margin; similarly, in order for the first conductive portion 11 to provide a sufficient alignment margin of the first sub-metal pillar 121, the range of the first conductive portion 11 must also be greater than the first The range of the sub-metal pillars 121 greatly increases the area of the first conductive portion 11, thereby limiting the available wiring space.

由於現今電子產品均有追求更加輕薄短小的趨勢,所以廠商不斷尋求能達到高密度設置電子元件與高佈線密度的方式。因此,如何避免上述習知技術中之種種問題,實為目前業界所急需解決的課題。 Since today's electronic products are pursuing a trend toward lighter, thinner and shorter, manufacturers are continually seeking ways to achieve high-density electronic components and high wiring density. Therefore, how to avoid various problems in the above-mentioned prior art is an urgent problem to be solved in the industry.

有鑒於上述習知技術之缺失,本發明提供一種封裝基板,係包括:封裝體,係具有相對之頂面及底面;複數導電結構,係嵌埋於該封裝體中,且各該導電結構包括:第一導電部,係嵌埋於該封裝體中,且外露出該底面;及依序形成於該第一導電部上之金屬柱、對位層及導電盲孔,該導電盲孔之一端外露出該頂面,令各該對位層的垂直投影面積大於各該金屬柱的垂直投影面積,且令各該對位層的垂直投影面積大於各該導電盲孔的垂直投影面積;第二導電部,係形成於該導電盲孔與頂面上;以及電子元件,係包埋於該封裝體中。 The present invention provides a package substrate, comprising: a package having opposite top and bottom surfaces; a plurality of conductive structures embedded in the package, and each of the conductive structures includes a first conductive portion embedded in the package and exposing the bottom surface; and a metal pillar, an alignment layer and a conductive blind hole sequentially formed on the first conductive portion, and one end of the conductive blind hole Exposing the top surface such that the vertical projection area of each of the alignment layers is larger than the vertical projection area of each of the metal pillars, and the vertical projection area of each of the alignment layers is greater than the vertical projection area of each of the conductive blind holes; The conductive portion is formed on the conductive blind via and the top surface; and the electronic component is embedded in the package.

本發明復提供一種封裝基板之製法,係包括:於一承載板上形成複數第一導電部;於該複數第一導電部上設置電子元件,並於各該第一導電部上形成金屬柱;於各該金屬柱之端面上形成對位層,令各該對位層的垂直投影面積 大於各該金屬柱的垂直投影面積;於該承載板上形成封裝體,以包覆該第一導電部、金屬柱、電子元件與對位層,該封裝體具有連接該承載板的底面及與其相對的頂面;於各該對位層上的封裝體中形成導電盲孔,以由各該第一導電部、金屬柱、對位層及導電盲孔構成複數導電結構,其中,並於該封裝體之頂面與各該導電盲孔上形成第二導電部,且各該對位層之垂直投影面積大於各該導電盲孔之垂直投影面積;以及移除該承載板,以外露該第一導電部。 The present invention provides a method for manufacturing a package substrate, comprising: forming a plurality of first conductive portions on a carrier plate; providing electronic components on the plurality of first conductive portions, and forming metal posts on each of the first conductive portions; Forming an alignment layer on the end faces of the metal pillars so that the vertical projection area of each of the alignment layers a vertical projection area larger than each of the metal pillars; forming a package on the carrier plate to cover the first conductive portion, the metal pillar, the electronic component and the alignment layer, the package having a bottom surface connecting the carrier board and a conductive top hole is formed in the package body on each of the alignment layers to form a plurality of conductive structures by the first conductive portion, the metal pillar, the alignment layer and the conductive blind via, wherein Forming a second conductive portion on the top surface of the package and each of the conductive blind holes, and a vertical projected area of each of the alignment layers is larger than a vertical projected area of each of the conductive blind holes; and removing the carrier plate to expose the first a conductive portion.

由上可知,本發明係於金屬柱與導電盲孔間設置對位層,該對位層對各該第一導電部的垂直投影面積大於該金屬柱對各該第一導電部的垂直投影面積,且該對位層對各該第一導電部的垂直投影面積大於該導電盲孔對各該第一導電部的垂直投影面積,所以該對位層能提供該導電盲孔足夠的對位所需裕度,而能縮小該金屬柱與第一導電部的範圍或維持該金屬柱與第一導電部原有的範圍大小,進而能提高佈線密度與電子元件的設置密度;此外,聚亞醯胺層的設置有助於盲孔的形成並增加與第二導電部間的黏著性,以提高整體良率。 As can be seen from the above, the present invention is characterized in that an alignment layer is disposed between the metal pillar and the conductive blind hole, and the vertical projection area of the alignment layer to each of the first conductive portions is larger than the vertical projection area of the metal pillar to each of the first conductive portions. And the vertical projection area of the alignment layer to each of the first conductive portions is greater than the vertical projection area of the conductive vias to each of the first conductive portions, so the alignment layer can provide sufficient alignment of the conductive blind holes A margin is required, and the range of the metal post and the first conductive portion can be reduced or the original range of the metal post and the first conductive portion can be maintained, thereby increasing the wiring density and the mounting density of the electronic component; The placement of the amine layer facilitates the formation of blind holes and increases the adhesion to the second conductive portion to improve overall yield.

11、32‧‧‧第一導電部 11, 32‧‧‧ First Conductive Department

12、34‧‧‧金屬柱 12, 34‧‧‧ metal column

121‧‧‧第一子金屬柱 121‧‧‧First child metal column

122‧‧‧第二子金屬柱 122‧‧‧Second sub-metal column

13、40b、47‧‧‧第二導電部 13, 40b, 47‧‧‧Second Conductive Department

14、37‧‧‧封裝體 14, 37‧‧‧ package

30‧‧‧承載板 30‧‧‧Loading board

31‧‧‧第一阻層 31‧‧‧First barrier layer

310‧‧‧第一開孔 310‧‧‧First opening

32a‧‧‧第一表面 32a‧‧‧ first surface

32b‧‧‧第二表面 32b‧‧‧ second surface

33‧‧‧第二阻層 33‧‧‧second barrier layer

330‧‧‧第二開孔 330‧‧‧Second opening

35‧‧‧對位層 35‧‧‧ alignment layer

36‧‧‧電子元件 36‧‧‧Electronic components

37a‧‧‧第三表面 37a‧‧‧ third surface

37b‧‧‧第四表面 37b‧‧‧Fourth surface

370、450‧‧‧盲孔 370, 450‧‧ ‧ blind holes

38‧‧‧導電層 38‧‧‧ Conductive layer

39‧‧‧第三阻層 39‧‧‧ third resistive layer

390‧‧‧第三開孔 390‧‧‧ third opening

40a、46‧‧‧導電盲孔 40a, 46‧‧‧ conductive blind holes

41‧‧‧絕緣保護層 41‧‧‧Insulating protective layer

410‧‧‧絕緣保護層開孔 410‧‧‧Insulating protective layer opening

42‧‧‧第四阻層 42‧‧‧ fourth resistive layer

43‧‧‧第五阻層 43‧‧‧ fifth resistive layer

430‧‧‧開口 430‧‧‧ openings

44‧‧‧表面處理層 44‧‧‧Surface treatment layer

45‧‧‧介電材 45‧‧‧ dielectric materials

第1圖所示者係習知之模壓式內部連接型系統的封裝基板的剖視圖;第2圖所示者係另一種習知之模壓式內部連接型系統的封裝基板的剖視圖;第3A至3N圖所示者係本發明之封裝基板之製法的第 一實施例的剖視圖;以及第4A至4D圖所示者係本發明之封裝基板之製法的第二實施例的剖視圖。 1 is a cross-sectional view of a package substrate of a conventional molded internal connection type system; and FIG. 2 is a cross-sectional view of another conventional packaged internal connection type system; FIG. 3A to 3N The present invention is the method for manufacturing the package substrate of the present invention. A cross-sectional view of an embodiment; and a cross-sectional view of a second embodiment of the method of fabricating the package substrate of the present invention, as shown in FIGS. 4A to 4D.

以下藉由特定的具體實施例說明本發明之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本發明之其他優點及功效。 The other embodiments of the present invention will be readily understood by those skilled in the art from this disclosure.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本發明可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本發明所能產生之功效及所能達成之目的下,均應仍落在本發明所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之用語亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It is to be understood that the structure, the proportions, the size, and the like of the present invention are intended to be used in conjunction with the disclosure of the specification, and are not intended to limit the invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effects and the objectives that can be achieved by the present invention. The technical content disclosed in the invention can be covered. In the meantime, the terminology used in the present specification is only for the purpose of illustration, and is not intended to limit the scope of the invention. The change or adjustment of the relative relationship is also considered as The scope of the invention can be implemented.

第一實施例 First embodiment

第3A至3N圖所示者,係本發明之封裝基板之製法的第一實施例的剖視圖。 3A to 3N are cross-sectional views showing a first embodiment of the method of fabricating the package substrate of the present invention.

如第3A圖所示,於一承載板30之頂面上形成具有第一開孔310之第一阻層31,並於該第一開孔310中形成具有相對之第一表面32a與第二表面32b的第一導電部32,令該第一導電部32以其第一表面32a連接該承載板30, 該承載板30可為鋼板。 As shown in FIG. 3A, a first resist layer 31 having a first opening 310 is formed on a top surface of a carrier plate 30, and an opposite first surface 32a and a second surface are formed in the first opening 310. The first conductive portion 32 of the surface 32b connects the first conductive portion 32 to the carrier plate 30 with its first surface 32a. The carrier plate 30 can be a steel plate.

如第3B圖所示,於該第一阻層31與第一導電部32上形成具有第二開孔330之第二阻層33,並於該第二開孔330中之該第一導電部32之第二表面32b上形成金屬柱34。 As shown in FIG. 3B, a second resist layer 33 having a second opening 330 is formed on the first resist layer 31 and the first conductive portion 32, and the first conductive portion is in the second opening 330. A metal post 34 is formed on the second surface 32b of the 32.

如第3C圖所示,於該金屬柱34之端面與第二阻層33上形成可為任意圖案的對位層35,令該對位層35對各該第一導電部32的垂直投影面積大於該金屬柱34對各該第一導電部32的垂直投影面積。 As shown in FIG. 3C, an alignment layer 35 of an arbitrary pattern is formed on the end surface of the metal pillar 34 and the second resist layer 33, and the vertical projection area of the alignment layer 35 for each of the first conductive portions 32 is formed. It is larger than the vertical projected area of the metal pillars 34 to the first conductive portions 32.

如第3D圖所示,移除該第一阻層31與第二阻層33,並於該第一導電部32之第二表面32b上設置電子元件36,該電子元件36係為積層陶瓷電容器(Multi-layer Ceramic Capacitor,簡稱MLCC)。 As shown in FIG. 3D, the first resistive layer 31 and the second resistive layer 33 are removed, and the electronic component 36 is disposed on the second surface 32b of the first conductive portion 32. The electronic component 36 is a laminated ceramic capacitor. (Multi-layer Ceramic Capacitor, MLCC for short).

如第3E圖所示,於該承載板30之頂面上形成封裝體37,以包覆該第一導電部32、金屬柱34、電子元件36與對位層35,該封裝體37具有連接該承載板30的第三表面37a(即該封裝體37的底面)及與其相對的第四表面37b(即該封裝體37的頂面)。 As shown in FIG. 3E, a package body 37 is formed on the top surface of the carrier plate 30 to cover the first conductive portion 32, the metal pillars 34, the electronic component 36 and the alignment layer 35, and the package body 37 has a connection. The third surface 37a of the carrier plate 30 (i.e., the bottom surface of the package body 37) and the fourth surface 37b opposite thereto (i.e., the top surface of the package body 37).

如第3F圖所示,移除部分該封裝體37,以形成外露該對位層35之盲孔370,形成該盲孔370之方式係為雷射燒灼或機械鑽孔。 As shown in FIG. 3F, a portion of the package body 37 is removed to form a blind via 370 that exposes the alignment layer 35. The blind via 370 is formed by laser cauterization or mechanical drilling.

如第3G圖所示,於該封裝體37與對位層35上形成導電層38。 As shown in FIG. 3G, a conductive layer 38 is formed on the package 37 and the alignment layer 35.

如第3H圖所示,於該導電層38上形成具有第三開孔 390的第三阻層39。 As shown in FIG. 3H, a third opening is formed on the conductive layer 38. The third resistive layer 39 of 390.

如第3I圖所示,利用該導電層38為電流路徑進行例如銅電鍍的電鍍步驟,進而於該對位層35上的盲孔370中形成導電盲孔40a,以由各該第一導電部32、金屬柱34、對位層35及導電盲孔40a構成複數導電結構(未標示元件符號),並於該第四表面37b與導電盲孔40a上形成第二導電部40b,以使該第二導電部40b電性連接該第一導電部32,令該對位層35對各該第一導電部32的垂直投影面積大於該導電盲孔40a對各該第一導電部32的垂直投影面積,且該對位層35位於該金屬柱34與導電盲孔40a之間,該導電盲孔40a與第二導電部40b係為一體成形者,但不以此為限。 As shown in FIG. 3I, the conductive layer 38 performs a plating step of, for example, copper plating for the current path, and further forms a conductive via hole 40a in the blind via 370 on the alignment layer 35 to be formed by each of the first conductive portions. 32, the metal pillar 34, the alignment layer 35 and the conductive blind hole 40a constitute a plurality of conductive structures (not labeled with the component symbol), and the second conductive portion 40b is formed on the fourth surface 37b and the conductive blind via 40a, so that the first The two conductive portions 40b are electrically connected to the first conductive portion 32, such that the vertical projected area of the alignment layer 35 to each of the first conductive portions 32 is larger than the vertical projected area of the conductive blind vias 40a to the first conductive portions 32. The aligning layer 35 is located between the metal post 34 and the conductive blind hole 40a. The conductive blind hole 40a and the second conductive portion 40b are integrally formed, but not limited thereto.

如第3J圖所示,移除該第三阻層39及其所覆蓋的導電層38。 As shown in FIG. 3J, the third resist layer 39 and the conductive layer 38 it covers are removed.

如第3K圖所示,於該第二導電部40b與第四表面37b上形成絕緣保護層41,且該絕緣保護層41具有複數外露部分該第二導電部40b的絕緣保護層開孔410。 As shown in FIG. 3K, an insulating protective layer 41 is formed on the second conductive portion 40b and the fourth surface 37b, and the insulating protective layer 41 has a plurality of insulating protective layer openings 410 of the exposed portion of the second conductive portion 40b.

如第3L圖所示,於該絕緣保護層41、第二導電部40b與第四表面37b上形成第四阻層42,並於該承載板30之底面上形成具有外露該底面之開口430的第五阻層43。 As shown in FIG. 3L, a fourth resist layer 42 is formed on the insulating protective layer 41, the second conductive portion 40b and the fourth surface 37b, and an opening 430 having the bottom surface is formed on the bottom surface of the carrier plate 30. The fifth resist layer 43.

如第3M圖所示,移除該開口430中的承載板30,並視需要移除部分厚度的該第一導電部32,再移除該第四阻層42與第五阻層43。要特別說明的是,本發明亦可視需要完全移除該承載板30(未圖示此情況)。 As shown in FIG. 3M, the carrier plate 30 in the opening 430 is removed, and the first conductive portion 32 of a portion of the thickness is removed as needed, and the fourth resist layer 42 and the fifth resist layer 43 are removed. It should be particularly noted that the present invention can also completely remove the carrier plate 30 as needed (this is not shown).

如第3N圖所示,於該第一導電部32與第二導電部40b之外露表面上形成表面處理層44,形成該表面處理層44之材質係為鎳/金(Ni/Au)、鎳/鈀/金(Ni/Pd/Au)或有機保焊劑(OSP)。 As shown in FIG. 3N, a surface treatment layer 44 is formed on the exposed surface of the first conductive portion 32 and the second conductive portion 40b, and the surface treatment layer 44 is made of nickel/gold (Ni/Au) and nickel. /Palladium/Gold (Ni/Pd/Au) or Organic Soldering Agent (OSP).

本發明揭露一種封裝基板,係包括:封裝體37,係具有相對之頂面及底面;複數導電結構,係嵌埋於該封裝體37中,且各該導電結構包括:第一導電部32,係嵌埋於該封裝體37中,且外露出該底面;及依序形成於該第一導電部32上之金屬柱34、對位層35及導電盲孔40a,該導電盲孔40a之一端外露出該頂面,令各該對位層35對各該第一導電部32的垂直投影面積大於各該金屬柱34對各該第一導電部32的垂直投影面積,且令各該對位層35對各該第一導電部32的垂直投影面積大於各該導電盲孔40a對各該第一導電部32的垂直投影面積;及第二導電部40b,係形成於該導電盲孔40a與頂面上,且外露出該頂面;以及電子元件36,係包埋於該封裝體37中。 The package substrate comprises: a package body 37 having opposite top and bottom surfaces; a plurality of conductive structures embedded in the package body 37, and each of the conductive structures includes: a first conductive portion 32, Embedded in the package body 37 and exposing the bottom surface; and the metal pillar 34, the alignment layer 35 and the conductive blind hole 40a sequentially formed on the first conductive portion 32, one end of the conductive blind hole 40a The top surface is exposed, so that the vertical projection area of each of the alignment layers 35 for each of the first conductive portions 32 is larger than the vertical projection area of each of the metal pillars 34 for each of the first conductive portions 32, and each of the alignments is made. The vertical projection area of each of the first conductive portions 32 of the layer 35 is larger than the vertical projection area of each of the conductive blind holes 40a to the first conductive portions 32; and the second conductive portion 40b is formed on the conductive blind vias 40a and The top surface is exposed on the top surface; and the electronic component 36 is embedded in the package body 37.

於前述之封裝基板中,復包括絕緣保護層41,係形成於該第二導電部40b與第四表面37b上,且具有複數外露部分該第二導電部40b的絕緣保護層開孔410。 In the package substrate, the insulating protective layer 41 is formed on the second conductive portion 40b and the fourth surface 37b, and has a plurality of insulating protective layer openings 410 of the exposed portion of the second conductive portion 40b.

於本實施例之封裝基板中,復包括表面處理層44,係形成於該第一導電部32與第二導電部40b之外露表面上,且該電子元件36係為積層陶瓷電容器(Multi-layer Ceramic Capacitor,簡稱MLCC)。 In the package substrate of the embodiment, a surface treatment layer 44 is formed on the exposed surface of the first conductive portion 32 and the second conductive portion 40b, and the electronic component 36 is a multilayer ceramic capacitor (Multi-layer). Ceramic Capacitor, referred to as MLCC).

第二實施例 Second embodiment

第4A至4D圖所示者,係本發明之封裝基板之製法的第二實施例的剖視圖。 4A to 4D are cross-sectional views showing a second embodiment of the method of fabricating the package substrate of the present invention.

本實施例大致上類似前一實施例,其主要不同之處係描述如下。 This embodiment is substantially similar to the previous embodiment, and the main differences are described below.

如第4A圖所示,其係延續自第3E圖,研磨該封裝體37,以令該對位層35嵌埋並齊平於該第四表面37b。 As shown in FIG. 4A, which continues from FIG. 3E, the package 37 is ground to embed and align the alignment layer 35 to the fourth surface 37b.

如第4B圖所示,於該第四表面37b與對位層35上形成介電材45,該介電材45之材質可為聚亞醯胺(polyimide)或封裝材料(molding compound)。 As shown in FIG. 4B, a dielectric material 45 is formed on the fourth surface 37b and the alignment layer 35. The material of the dielectric material 45 may be a polyimide or a molding compound.

如第4C圖所示,移除部分該介電材45,以形成外露部分該對位層35的盲孔450。 As shown in FIG. 4C, a portion of the dielectric material 45 is removed to form a blind via 450 of the exposed portion of the alignment layer 35.

如第4D圖所示,於該對位層35上的盲孔450中形成導電盲孔46,並於該介電材45與導電盲孔46上形成第二導電部47,以使該第二導電部47電性連接該第一導電部32,令該對位層35對各該第一導電部32的垂直投影面積大於該導電盲孔46對各該第一導電部32的垂直投影面積,且該對位層35位於該金屬柱34與導電盲孔46之間,再如前一實施例地移除該承載板30及形成該絕緣保護層41與表面處理層44。 As shown in FIG. 4D, a conductive via hole 46 is formed in the blind via 450 on the alignment layer 35, and a second conductive portion 47 is formed on the dielectric material 45 and the conductive via hole 46 to make the second The conductive portion 47 is electrically connected to the first conductive portion 32 such that the vertical projected area of the alignment layer 35 to each of the first conductive portions 32 is greater than the vertical projected area of the conductive blind vias 46 for each of the first conductive portions 32. The alignment layer 35 is located between the metal pillars 34 and the conductive blind vias 46. The carrier layer 30 is removed and the insulating protective layer 41 and the surface treatment layer 44 are formed as in the previous embodiment.

本發明揭露另一種封裝基板,其相近於前一實施例之封裝基板,但其中,該封裝體包括封裝層(封裝體37)及形成於該封裝層及該對位層35上之介電材45,該介電材45之材質可為聚亞醯胺或封裝材料(molding compound),其中,該封裝層(封裝體37)包覆該第一導電部32、金屬 柱34、電子元件36與對位層35,該介電材45係包覆該導電盲孔46。 Another package substrate is similar to the package substrate of the previous embodiment, but the package includes an encapsulation layer (package 37) and a dielectric material formed on the encapsulation layer and the alignment layer 35. 45. The material of the dielectric material 45 may be a polyimide or a molding compound, wherein the encapsulation layer (the package 37) covers the first conductive portion 32 and the metal. The pillar 34, the electronic component 36 and the alignment layer 35 are covered by the dielectric material 45.

綜上所述,相較於習知技術,由於本發明係於金屬柱與導電盲孔間設置對位層,該對位層對各該第一導電部的垂直投影面積大於該金屬柱對各該第一導電部的垂直投影面積,且該對位層對各該第一導電部的垂直投影面積大於該導電盲孔對各該第一導電部的垂直投影面積,所以該對位層能提供該導電盲孔足夠的對位所需裕度,而能縮小該金屬柱與第一導電部的範圍或維持該金屬柱與第一導電部原有的範圍大小,進而能提高佈線密度與電子元件的設置密度;此外,聚亞醯胺層的設置有助於盲孔的形成並增加與第二導電部間的黏著性,以提高整體良率。 In summary, compared with the prior art, the present invention is characterized in that an alignment layer is disposed between the metal pillar and the conductive blind hole, and the vertical projection area of the alignment layer to each of the first conductive portions is greater than that of the metal pillar pair. a vertical projected area of the first conductive portion, and a vertical projected area of the alignment layer to each of the first conductive portions is greater than a vertical projected area of the conductive vias for each of the first conductive portions, so the alignment layer can provide The conductive blind hole has a sufficient margin for alignment, and can narrow the range of the metal pillar and the first conductive portion or maintain the original range of the metal pillar and the first conductive portion, thereby improving the wiring density and the electronic component. The density of the set; in addition, the arrangement of the polyimide layer contributes to the formation of blind holes and increases the adhesion to the second conductive portion to improve the overall yield.

上述實施例係用以例示性說明本發明之原理及其功效,而非用於限制本發明。任何熟習此項技藝之人士均可在不違背本發明之精神及範疇下,對上述實施例進行修改。因此本發明之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are intended to illustrate the principles of the invention and its effects, and are not intended to limit the invention. Any of the above-described embodiments may be modified by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of protection of the present invention should be as set forth in the appended claims.

30‧‧‧承載板 30‧‧‧Loading board

32‧‧‧第一導電部 32‧‧‧First Conductive Department

34‧‧‧金屬柱 34‧‧‧Metal column

35‧‧‧對位層 35‧‧‧ alignment layer

36‧‧‧電子元件 36‧‧‧Electronic components

37‧‧‧封裝體 37‧‧‧Package

38‧‧‧導電層 38‧‧‧ Conductive layer

40a‧‧‧導電盲孔 40a‧‧‧conductive blind hole

40b‧‧‧第二導電部 40b‧‧‧Second Conductive Department

41‧‧‧絕緣保護層 41‧‧‧Insulating protective layer

Claims (14)

一種封裝基板,係包括:封裝體,係具有相對之頂面及底面;複數導電結構,係嵌埋於該封裝體中,且各該導電結構包括:第一導電部,係嵌埋於該封裝體中,且外露出該底面;及依序形成於該第一導電部上之金屬柱、對位層及導電盲孔,該導電盲孔之一端外露出該頂面,令各該對位層的垂直投影面積大於各該金屬柱的垂直投影面積,且令各該對位層的垂直投影面積大於各該導電盲孔的垂直投影面積;第二導電部,係形成於該導電盲孔與頂面上;以及電子元件,係包埋於該封裝體中。 A package substrate includes: a package having opposite top and bottom surfaces; a plurality of conductive structures embedded in the package, and each of the conductive structures includes: a first conductive portion embedded in the package And exposing the bottom surface; and the metal pillar, the alignment layer and the conductive blind hole formed on the first conductive portion, the one end of the conductive blind hole is exposed outside the top surface, and the alignment layer is arranged The vertical projection area is larger than the vertical projection area of each of the metal pillars, and the vertical projection area of each of the alignment layers is larger than the vertical projection area of each of the conductive blind holes; the second conductive portion is formed on the conductive blind hole and the top And the electronic component is embedded in the package. 如申請專利範圍第1項所述之封裝基板,復包括絕緣保護層,係形成於該第二導電部與該封裝體之頂面上,且具有複數外露部分該第二導電部的絕緣保護層開孔。 The package substrate according to claim 1, further comprising an insulating protective layer formed on the top surface of the second conductive portion and the package, and having a plurality of exposed portions of the insulating portion of the second conductive portion Open the hole. 如申請專利範圍第1項所述之封裝基板,復包括表面處理層,係形成於該第一導電部與第二導電部之外露表面上。 The package substrate according to claim 1, further comprising a surface treatment layer formed on the exposed surface of the first conductive portion and the second conductive portion. 如申請專利範圍第1項所述之封裝基板,其中,該電子元件係為積層陶瓷電容器。 The package substrate according to claim 1, wherein the electronic component is a laminated ceramic capacitor. 如申請專利範圍第1項所述之封裝基板,其中,該封裝體包括封裝層及形成於該封裝層及該對位層上之介電材,其中,該封裝層包覆該第一導電部、金屬柱、電子元件與對位層,該介電材係包覆該導電盲孔。 The package substrate of claim 1, wherein the package comprises an encapsulation layer and a dielectric material formed on the encapsulation layer and the alignment layer, wherein the encapsulation layer encapsulates the first conductive portion And a metal pillar, an electronic component and an alignment layer, the dielectric material covering the conductive blind hole. 如申請專利範圍第1項所述之封裝基板,其中,該導電盲孔與第二導電部係為一體成形者。 The package substrate according to claim 1, wherein the conductive blind hole and the second conductive portion are integrally formed. 一種封裝基板之製法,係包括:於一承載板上形成複數第一導電部;於該複數第一導電部上設置電子元件,並於各該第一導電部上形成金屬柱;於各該金屬柱之端面上形成對位層,令各該對位層的垂直投影面積大於各該金屬柱的垂直投影面積;於該承載板上形成封裝體,以包覆該第一導電部、金屬柱、電子元件與對位層,該封裝體具有連接該承載板的底面及與其相對的頂面;於各該對位層上的封裝體中形成導電盲孔,以由各該第一導電部、金屬柱、對位層及導電盲孔構成複數導電結構,其中,並於該封裝體之頂面與各該導電盲孔上形成第二導電部,且各該對位層之垂直投影面積大於各該導電盲孔之垂直投影面積;以及移除該承載板,以外露該第一導電部。 A method for manufacturing a package substrate, comprising: forming a plurality of first conductive portions on a carrier plate; providing electronic components on the plurality of first conductive portions, and forming metal pillars on each of the first conductive portions; Forming an alignment layer on the end surface of the column, so that a vertical projection area of each of the alignment layers is larger than a vertical projection area of each of the metal pillars; a package body is formed on the carrier plate to cover the first conductive portion, the metal pillar, An electronic component and an alignment layer, the package has a bottom surface connected to the carrier and a top surface opposite thereto; and a conductive blind hole is formed in the package on each of the alignment layers to be formed by each of the first conductive portions and the metal The pillar, the alignment layer and the conductive blind via form a plurality of conductive structures, wherein a second conductive portion is formed on the top surface of the package and each of the conductive blind vias, and a vertical projected area of each of the alignment layers is greater than each a vertical projection area of the conductive blind hole; and removing the carrier plate to expose the first conductive portion. 如申請專利範圍第7項所述之封裝基板之製法,其中,該導電盲孔與第二導電部係為一體成形者。 The method of manufacturing a package substrate according to claim 7, wherein the conductive blind hole and the second conductive portion are integrally formed. 如申請專利範圍第7項所述之封裝基板之製法,其中, 係於該封裝體中以雷射燒灼或機械鑽孔形成複數盲孔,以於各該盲孔中形成該導電盲孔。 The method for manufacturing a package substrate according to claim 7 of the patent application, wherein A plurality of blind holes are formed in the package by laser cauterization or mechanical drilling to form the conductive blind holes in each of the blind holes. 如申請專利範圍第7項所述之封裝基板之製法,於形成該第二導電部之後,復包括於該第二導電部與頂面上形成絕緣保護層,且該絕緣保護層具有複數外露部分該第二導電部的絕緣保護層開孔。 The method for manufacturing a package substrate according to claim 7 , after forming the second conductive portion, forming an insulating protective layer on the second conductive portion and the top surface, and the insulating protective layer has a plurality of exposed portions The insulating protective layer of the second conductive portion is opened. 如申請專利範圍第7項所述之封裝基板之製法,於形成該第二導電部之後,復包括於該第一導電部與第二導電部之外露表面上形成表面處理層。 The method for manufacturing a package substrate according to claim 7, wherein after forming the second conductive portion, a surface treatment layer is formed on the exposed surfaces of the first conductive portion and the second conductive portion. 如申請專利範圍第7項所述之封裝基板之製法,其中,該電子元件係為積層陶瓷電容器。 The method of manufacturing a package substrate according to claim 7, wherein the electronic component is a laminated ceramic capacitor. 如申請專利範圍第7項所述之封裝基板之製法,其中,該封裝體包括形成於該承載板上之封裝層及形成於該封裝層及該對位層上之介電材,其中,該封裝層包覆該第一導電部、金屬柱、電子元件與對位層,該介電材係包覆該導電盲孔。 The method of manufacturing a package substrate according to claim 7, wherein the package comprises an encapsulation layer formed on the carrier board and a dielectric material formed on the encapsulation layer and the alignment layer, wherein The encapsulation layer encapsulates the first conductive portion, the metal pillar, the electronic component and the alignment layer, and the dielectric material covers the conductive via hole. 如申請專利範圍第13項所述之封裝基板之製法,其中,形成該封裝體之步驟包括形成該封裝層;研磨該封裝層,以令該對位層嵌埋並齊平於該封裝層;以及於該封裝層及該對位層上形成該介電材。 The method for manufacturing a package substrate according to claim 13 , wherein the step of forming the package comprises forming the package layer; grinding the package layer to embed and align the alignment layer with the package layer; And forming the dielectric material on the encapsulation layer and the alignment layer.
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