CN103713474B - 用于微光刻的照明光学部件 - Google Patents
用于微光刻的照明光学部件 Download PDFInfo
- Publication number
- CN103713474B CN103713474B CN201410006090.5A CN201410006090A CN103713474B CN 103713474 B CN103713474 B CN 103713474B CN 201410006090 A CN201410006090 A CN 201410006090A CN 103713474 B CN103713474 B CN 103713474B
- Authority
- CN
- China
- Prior art keywords
- field
- plane
- illumination
- thing
- intensity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005286 illumination Methods 0.000 title claims abstract description 209
- 238000001393 microlithography Methods 0.000 title claims abstract description 14
- 230000005855 radiation Effects 0.000 claims abstract description 130
- 230000003287 optical effect Effects 0.000 claims abstract description 30
- 210000001747 pupil Anatomy 0.000 claims description 42
- 238000009826 distribution Methods 0.000 claims description 25
- 230000000694 effects Effects 0.000 claims description 19
- 238000003384 imaging method Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 2
- 238000003780 insertion Methods 0.000 claims 1
- 230000037431 insertion Effects 0.000 claims 1
- 230000008859 change Effects 0.000 description 9
- 230000008901 benefit Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000003313 weakening effect Effects 0.000 description 2
- 102100029469 WD repeat and HMG-box DNA-binding protein 1 Human genes 0.000 description 1
- 101710097421 WD repeat and HMG-box DNA-binding protein 1 Proteins 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70083—Non-homogeneous intensity distribution in the mask plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lenses (AREA)
- Microscoopes, Condenser (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1281207P | 2007-12-11 | 2007-12-11 | |
| US61/012,812 | 2007-12-11 | ||
| DE102008013229.2A DE102008013229B4 (de) | 2007-12-11 | 2008-03-07 | Beleuchtungsoptik für die Mikrolithographie |
| DE102008013229.2 | 2008-03-07 | ||
| CN200880120429.7A CN101896869B (zh) | 2007-12-11 | 2008-11-20 | 用于微光刻的照明光学部件 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880120429.7A Division CN101896869B (zh) | 2007-12-11 | 2008-11-20 | 用于微光刻的照明光学部件 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103713474A CN103713474A (zh) | 2014-04-09 |
| CN103713474B true CN103713474B (zh) | 2016-06-01 |
Family
ID=40680146
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880120429.7A Active CN101896869B (zh) | 2007-12-11 | 2008-11-20 | 用于微光刻的照明光学部件 |
| CN201410006090.5A Active CN103713474B (zh) | 2007-12-11 | 2008-11-20 | 用于微光刻的照明光学部件 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880120429.7A Active CN101896869B (zh) | 2007-12-11 | 2008-11-20 | 用于微光刻的照明光学部件 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8937708B2 (enExample) |
| EP (1) | EP2240830B1 (enExample) |
| JP (2) | JP5548135B2 (enExample) |
| KR (1) | KR101517645B1 (enExample) |
| CN (2) | CN101896869B (enExample) |
| DE (1) | DE102008013229B4 (enExample) |
| TW (1) | TWI474125B (enExample) |
| WO (1) | WO2009074211A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008042462B4 (de) * | 2008-09-30 | 2010-11-04 | Carl Zeiss Smt Ag | Beleuchtungssystem für die EUV-Mikrolithographie |
| CN102203675B (zh) * | 2008-10-31 | 2014-02-26 | 卡尔蔡司Smt有限责任公司 | 用于euv微光刻的照明光学部件 |
| DE202009004769U1 (de) | 2009-01-19 | 2010-06-17 | Paul Hettich Gmbh & Co. Kg | Auszugsführung |
| DE102010001388A1 (de) | 2010-01-29 | 2011-08-04 | Carl Zeiss SMT GmbH, 73447 | Facettenspiegel zum Einsatz in der Mikrolithografie |
| DE102010062779A1 (de) * | 2010-12-10 | 2012-06-14 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithographie |
| KR101528397B1 (ko) * | 2010-12-28 | 2015-06-11 | 칼 짜이스 에스엠티 게엠베하 | 마이크로리소그래피 투영 노광 장치의 조명 시스템 |
| DE102011005881A1 (de) | 2011-03-22 | 2012-05-03 | Carl Zeiss Smt Gmbh | Verfahren zur Einstellung eines Beleuchtungssystems einer Projektionsbelichtungsanlage für die Projektionslithographie |
| NL2008322A (en) | 2011-04-13 | 2012-10-16 | Asml Holding Nv | Double euv illumination uniformity correction system and method. |
| DE102011076297A1 (de) | 2011-05-23 | 2012-11-29 | Carl Zeiss Smt Gmbh | Blende |
| DE102012205886A1 (de) | 2012-04-11 | 2013-10-17 | Carl Zeiss Smt Gmbh | Beleuchtungsintensitäts-Korrekturvorrichtung zur Vorgabe einer Beleuchtungsintensität über ein Beleuchtungsfeld einer lithographischen Projektionsbelichtungsanlage |
| DE102012208016A1 (de) * | 2012-05-14 | 2013-05-08 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Mikrolithographie |
| DE102012212664A1 (de) * | 2012-07-19 | 2014-01-23 | Carl Zeiss Smt Gmbh | Verfahren zum Einstellen eines Beleuchtungssettings |
| DE102015209453A1 (de) | 2015-05-22 | 2016-11-24 | Carl Zeiss Smt Gmbh | Pupillenfacettenspiegel |
| DE102017220265A1 (de) | 2017-11-14 | 2019-05-16 | Carl Zeiss Smt Gmbh | Beleuchtungsintensitäts-Korrekturvorrichtung zur Vorgabe einer Beleuchtungsintensität über ein Beleuchtungsfeld einer lithographischen Projektionsbelichtungsanlage |
| DE102018201009A1 (de) * | 2018-01-23 | 2019-07-25 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithographie |
| DE102018208710A1 (de) | 2018-06-04 | 2019-12-05 | Carl Zeiss Smt Gmbh | Blende zur Anordnung in einer Engstelle eines EUV-Beleuchtungsbündels |
| DE102018215505A1 (de) | 2018-09-12 | 2018-10-31 | Carl Zeiss Smt Gmbh | Projektionsoptik für eine Projektionsbelichtungsanlage |
| DE102018217707A1 (de) | 2018-10-16 | 2018-12-27 | Carl Zeiss Smt Gmbh | Feldfacettenspiegel zum Einsatz in einer Beleuchtungsoptik einer Projektionsbelichtungsanlage für die EUV-Projektonslithographie |
| JP7623956B2 (ja) * | 2019-04-29 | 2025-01-29 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 照明光をｅｕｖリソグラフィのための投影露光システムの物体視野内へ案内するための測定照明光学ユニット |
| DE102019206869A1 (de) | 2019-05-13 | 2019-08-08 | Carl Zeiss Smt Gmbh | Strahlungsquellen-Modul |
| KR20230167934A (ko) | 2022-06-03 | 2023-12-12 | 삼성전자주식회사 | 극자외선 노광 장치 및 그것의 동작 방법 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1445613A (zh) * | 2002-03-18 | 2003-10-01 | Asml荷兰有限公司 | 光刻装置和器件的制作方法 |
| CN1641482A (zh) * | 2003-12-18 | 2005-07-20 | Asml荷兰有限公司 | 光刻装置及器件制造方法 |
| CN1645258A (zh) * | 2005-01-24 | 2005-07-27 | 中国科学院光电技术研究所 | 高数值孔径光刻成像偏振控制装置 |
| CN1797218A (zh) * | 2004-12-28 | 2006-07-05 | Asml控股股份有限公司 | 具有漏光及阴影补偿的均匀性校正系统 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3057998B2 (ja) * | 1994-02-16 | 2000-07-04 | キヤノン株式会社 | 照明装置及びそれを用いた投影露光装置 |
| JPH1039227A (ja) * | 1996-07-29 | 1998-02-13 | Olympus Optical Co Ltd | 遮光装置及び光学顕微鏡 |
| US6013401A (en) * | 1997-03-31 | 2000-01-11 | Svg Lithography Systems, Inc. | Method of controlling illumination field to reduce line width variation |
| DE10100265A1 (de) * | 2001-01-08 | 2002-07-11 | Zeiss Carl | Beleuchtungssystem mit Rasterelementen unterschiedlicher Größe |
| DE10053587A1 (de) | 2000-10-27 | 2002-05-02 | Zeiss Carl | Beleuchtungssystem mit variabler Einstellung der Ausleuchtung |
| EP0955641B1 (de) * | 1998-05-05 | 2004-04-28 | Carl Zeiss | Beleuchtungssystem insbesondere für die EUV-Lithographie |
| US6476905B1 (en) * | 2000-01-20 | 2002-11-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Step and scan exposure system equipped with a plurality of attenuator blades for exposure control |
| US6603532B2 (en) * | 2000-08-15 | 2003-08-05 | Nikon Corporation | Illuminance measurement apparatus, exposure apparatus, and exposure method |
| JP2002110529A (ja) * | 2000-10-03 | 2002-04-12 | Nikon Corp | 投影露光装置及び該装置を用いたマイクロデバイス製造方法 |
| EP1491959A1 (en) | 2001-09-07 | 2004-12-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US6741329B2 (en) * | 2001-09-07 | 2004-05-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7170587B2 (en) * | 2002-03-18 | 2007-01-30 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP3720788B2 (ja) * | 2002-04-15 | 2005-11-30 | キヤノン株式会社 | 投影露光装置及びデバイス製造方法 |
| DE10219514A1 (de) * | 2002-04-30 | 2003-11-13 | Zeiss Carl Smt Ag | Beleuchtungssystem, insbesondere für die EUV-Lithographie |
| WO2005040927A2 (en) | 2003-10-18 | 2005-05-06 | Carl Zeiss Smt Ag | Device and method for illumination dose adjustments in microlithography |
| US7030958B2 (en) * | 2003-12-31 | 2006-04-18 | Asml Netherlands B.V. | Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method |
| DE102004002415B4 (de) | 2004-01-16 | 2008-07-10 | Metzeler Automotive Profile Systems Gmbh | Vorrichtung zum Steuern und Überwachen eines bewegbaren Schliesselements, insbesondere einer elektrisch angetriebenen Fensterscheibe eines Kraftfahrzeugs |
| US20060103828A1 (en) * | 2004-11-17 | 2006-05-18 | David Douglas J | Adjustable illumination blade assembly for photolithography scanners |
| JP2006253487A (ja) * | 2005-03-11 | 2006-09-21 | Nikon Corp | 照明装置、投影露光方法、投影露光装置、及びマイクロデバイスの製造方法 |
| DE102006017336B4 (de) * | 2006-04-11 | 2011-07-28 | Carl Zeiss SMT GmbH, 73447 | Beleuchtungssystem mit Zoomobjektiv |
| JP4797764B2 (ja) * | 2006-04-14 | 2011-10-19 | 株式会社ニコン | 露光装置の較正方法及び露光装置 |
| NL1036162A1 (nl) * | 2007-11-28 | 2009-06-02 | Asml Netherlands Bv | Lithographic apparatus and method. |
-
2008
- 2008-03-07 DE DE102008013229.2A patent/DE102008013229B4/de active Active
- 2008-11-20 CN CN200880120429.7A patent/CN101896869B/zh active Active
- 2008-11-20 KR KR1020107014669A patent/KR101517645B1/ko active Active
- 2008-11-20 JP JP2010537272A patent/JP5548135B2/ja active Active
- 2008-11-20 CN CN201410006090.5A patent/CN103713474B/zh active Active
- 2008-11-20 WO PCT/EP2008/009786 patent/WO2009074211A1/en not_active Ceased
- 2008-11-20 EP EP08859710.9A patent/EP2240830B1/en active Active
- 2008-12-10 TW TW97147987A patent/TWI474125B/zh active
-
2010
- 2010-05-28 US US12/789,772 patent/US8937708B2/en active Active
-
2014
- 2014-05-16 JP JP2014102463A patent/JP5888622B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1445613A (zh) * | 2002-03-18 | 2003-10-01 | Asml荷兰有限公司 | 光刻装置和器件的制作方法 |
| CN1641482A (zh) * | 2003-12-18 | 2005-07-20 | Asml荷兰有限公司 | 光刻装置及器件制造方法 |
| CN1797218A (zh) * | 2004-12-28 | 2006-07-05 | Asml控股股份有限公司 | 具有漏光及阴影补偿的均匀性校正系统 |
| CN1645258A (zh) * | 2005-01-24 | 2005-07-27 | 中国科学院光电技术研究所 | 高数值孔径光刻成像偏振控制装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5548135B2 (ja) | 2014-07-16 |
| TWI474125B (zh) | 2015-02-21 |
| CN101896869A (zh) | 2010-11-24 |
| JP5888622B2 (ja) | 2016-03-22 |
| CN103713474A (zh) | 2014-04-09 |
| EP2240830B1 (en) | 2015-04-01 |
| JP2014179645A (ja) | 2014-09-25 |
| WO2009074211A1 (en) | 2009-06-18 |
| CN101896869B (zh) | 2014-02-26 |
| EP2240830A1 (en) | 2010-10-20 |
| DE102008013229B4 (de) | 2015-04-09 |
| US8937708B2 (en) | 2015-01-20 |
| US20100253926A1 (en) | 2010-10-07 |
| KR20100110316A (ko) | 2010-10-12 |
| KR101517645B1 (ko) | 2015-05-04 |
| JP2011507241A (ja) | 2011-03-03 |
| TW200941149A (en) | 2009-10-01 |
| DE102008013229A1 (de) | 2009-06-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103713474B (zh) | 用于微光刻的照明光学部件 | |
| KR101542272B1 (ko) | 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 구비하는 마이크로리소그래피용 투영 노광 장치 | |
| JP6280827B2 (ja) | Ｅｕｖマイクロリソグラフィ用の投影露光装置の照明光学系に使用するための視野ファセットミラー | |
| JP5525550B2 (ja) | マイクロリソグラフィ用の照明光学系及び光学系 | |
| KR101592136B1 (ko) | 결상 광학 시스템 및 이러한 유형의 결상 광학 시스템을 갖는 마이크로리소그래피용 투영 노광 장치 | |
| US7969556B2 (en) | Illumination optical system for microlithography and illumination system and projection exposure system with an illumination optical system of this type | |
| KR101309880B1 (ko) | 낮은 입사각을 갖는 육-미러 ｅｕｖ 프로젝션 시스템 | |
| US9176390B2 (en) | Method for adjusting an illumination system of a projection exposure apparatus for projection lithography | |
| US20090027644A1 (en) | Projection objective | |
| CN102483516A (zh) | 在像场中成像物场的成像光学系统和照明物场的照明光学系统 | |
| CN101836165A (zh) | 成像光学系统和投射曝光设备 | |
| TWI539240B (zh) | 用於微影之照明光學系統以及具有此類型之照明光學系統的投射曝光系統 | |
| CN102378935B (zh) | 成像光学部件以及具有此类型的成像光学部件的用于微光刻的投射曝光装置 | |
| US9612540B2 (en) | Method of operating a microlithographic apparatus | |
| JP2014517349A (ja) | 結像光学ユニット |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |