JP5548135B2 - マイクロリソグラフィ用の照明光学系 - Google Patents
マイクロリソグラフィ用の照明光学系 Download PDFInfo
- Publication number
- JP5548135B2 JP5548135B2 JP2010537272A JP2010537272A JP5548135B2 JP 5548135 B2 JP5548135 B2 JP 5548135B2 JP 2010537272 A JP2010537272 A JP 2010537272A JP 2010537272 A JP2010537272 A JP 2010537272A JP 5548135 B2 JP5548135 B2 JP 5548135B2
- Authority
- JP
- Japan
- Prior art keywords
- field
- illumination
- plane
- optical system
- intensity setting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70083—Non-homogeneous intensity distribution in the mask plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
- Microscoopes, Condenser (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1281207P | 2007-12-11 | 2007-12-11 | |
| US61/012,812 | 2007-12-11 | ||
| DE102008013229.2 | 2008-03-07 | ||
| DE102008013229.2A DE102008013229B4 (de) | 2007-12-11 | 2008-03-07 | Beleuchtungsoptik für die Mikrolithographie |
| PCT/EP2008/009786 WO2009074211A1 (en) | 2007-12-11 | 2008-11-20 | Illumination optics for microlithography |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014102463A Division JP5888622B2 (ja) | 2007-12-11 | 2014-05-16 | マイクロリソグラフィ用の照明光学系 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011507241A JP2011507241A (ja) | 2011-03-03 |
| JP2011507241A5 JP2011507241A5 (enExample) | 2012-01-19 |
| JP5548135B2 true JP5548135B2 (ja) | 2014-07-16 |
Family
ID=40680146
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010537272A Active JP5548135B2 (ja) | 2007-12-11 | 2008-11-20 | マイクロリソグラフィ用の照明光学系 |
| JP2014102463A Active JP5888622B2 (ja) | 2007-12-11 | 2014-05-16 | マイクロリソグラフィ用の照明光学系 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014102463A Active JP5888622B2 (ja) | 2007-12-11 | 2014-05-16 | マイクロリソグラフィ用の照明光学系 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8937708B2 (enExample) |
| EP (1) | EP2240830B1 (enExample) |
| JP (2) | JP5548135B2 (enExample) |
| KR (1) | KR101517645B1 (enExample) |
| CN (2) | CN103713474B (enExample) |
| DE (1) | DE102008013229B4 (enExample) |
| TW (1) | TWI474125B (enExample) |
| WO (1) | WO2009074211A1 (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102008042462B4 (de) * | 2008-09-30 | 2010-11-04 | Carl Zeiss Smt Ag | Beleuchtungssystem für die EUV-Mikrolithographie |
| JP5134732B2 (ja) * | 2008-10-31 | 2013-01-30 | カール・ツァイス・エスエムティー・ゲーエムベーハー | Euvマイクロリソグラフィ用の照明光学系 |
| DE202009004769U1 (de) | 2009-01-19 | 2010-06-17 | Paul Hettich Gmbh & Co. Kg | Auszugsführung |
| DE102010001388A1 (de) * | 2010-01-29 | 2011-08-04 | Carl Zeiss SMT GmbH, 73447 | Facettenspiegel zum Einsatz in der Mikrolithografie |
| DE102010062779A1 (de) | 2010-12-10 | 2012-06-14 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithographie |
| CN102859440B (zh) * | 2010-12-28 | 2015-04-22 | 卡尔蔡司Smt有限责任公司 | 微光刻投射曝光设备的照明系统 |
| DE102011005881A1 (de) | 2011-03-22 | 2012-05-03 | Carl Zeiss Smt Gmbh | Verfahren zur Einstellung eines Beleuchtungssystems einer Projektionsbelichtungsanlage für die Projektionslithographie |
| NL2008322A (en) | 2011-04-13 | 2012-10-16 | Asml Holding Nv | Double euv illumination uniformity correction system and method. |
| DE102011076297A1 (de) * | 2011-05-23 | 2012-11-29 | Carl Zeiss Smt Gmbh | Blende |
| DE102012205886A1 (de) * | 2012-04-11 | 2013-10-17 | Carl Zeiss Smt Gmbh | Beleuchtungsintensitäts-Korrekturvorrichtung zur Vorgabe einer Beleuchtungsintensität über ein Beleuchtungsfeld einer lithographischen Projektionsbelichtungsanlage |
| DE102012208016A1 (de) * | 2012-05-14 | 2013-05-08 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Mikrolithographie |
| DE102012212664A1 (de) * | 2012-07-19 | 2014-01-23 | Carl Zeiss Smt Gmbh | Verfahren zum Einstellen eines Beleuchtungssettings |
| DE102015209453A1 (de) | 2015-05-22 | 2016-11-24 | Carl Zeiss Smt Gmbh | Pupillenfacettenspiegel |
| DE102017220265A1 (de) | 2017-11-14 | 2019-05-16 | Carl Zeiss Smt Gmbh | Beleuchtungsintensitäts-Korrekturvorrichtung zur Vorgabe einer Beleuchtungsintensität über ein Beleuchtungsfeld einer lithographischen Projektionsbelichtungsanlage |
| DE102018201009A1 (de) * | 2018-01-23 | 2019-07-25 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithographie |
| DE102018208710A1 (de) | 2018-06-04 | 2019-12-05 | Carl Zeiss Smt Gmbh | Blende zur Anordnung in einer Engstelle eines EUV-Beleuchtungsbündels |
| DE102018215505A1 (de) | 2018-09-12 | 2018-10-31 | Carl Zeiss Smt Gmbh | Projektionsoptik für eine Projektionsbelichtungsanlage |
| DE102018217707A1 (de) | 2018-10-16 | 2018-12-27 | Carl Zeiss Smt Gmbh | Feldfacettenspiegel zum Einsatz in einer Beleuchtungsoptik einer Projektionsbelichtungsanlage für die EUV-Projektonslithographie |
| WO2020221763A1 (de) * | 2019-04-29 | 2020-11-05 | Carl Zeiss Smt Gmbh | Mess-beleuchtungsoptik zur führung von beleuchtungslicht in ein objektfeld einer projektionsbelichtungsanlage für die euv-lithografie |
| DE102019206869A1 (de) | 2019-05-13 | 2019-08-08 | Carl Zeiss Smt Gmbh | Strahlungsquellen-Modul |
| KR20230167934A (ko) | 2022-06-03 | 2023-12-12 | 삼성전자주식회사 | 극자외선 노광 장치 및 그것의 동작 방법 |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3057998B2 (ja) * | 1994-02-16 | 2000-07-04 | キヤノン株式会社 | 照明装置及びそれを用いた投影露光装置 |
| JPH1039227A (ja) * | 1996-07-29 | 1998-02-13 | Olympus Optical Co Ltd | 遮光装置及び光学顕微鏡 |
| US6013401A (en) | 1997-03-31 | 2000-01-11 | Svg Lithography Systems, Inc. | Method of controlling illumination field to reduce line width variation |
| EP0955641B1 (de) * | 1998-05-05 | 2004-04-28 | Carl Zeiss | Beleuchtungssystem insbesondere für die EUV-Lithographie |
| DE10100265A1 (de) * | 2001-01-08 | 2002-07-11 | Zeiss Carl | Beleuchtungssystem mit Rasterelementen unterschiedlicher Größe |
| DE10053587A1 (de) | 2000-10-27 | 2002-05-02 | Zeiss Carl | Beleuchtungssystem mit variabler Einstellung der Ausleuchtung |
| US6476905B1 (en) * | 2000-01-20 | 2002-11-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Step and scan exposure system equipped with a plurality of attenuator blades for exposure control |
| US6603532B2 (en) * | 2000-08-15 | 2003-08-05 | Nikon Corporation | Illuminance measurement apparatus, exposure apparatus, and exposure method |
| JP2002110529A (ja) | 2000-10-03 | 2002-04-12 | Nikon Corp | 投影露光装置及び該装置を用いたマイクロデバイス製造方法 |
| JP3836418B2 (ja) * | 2001-09-07 | 2006-10-25 | エイエスエムエル ネザランドズ ベスローテン フエンノートシャップ | リソグラフィ装置およびデバイスの製造方法 |
| EP1291721B1 (en) | 2001-09-07 | 2008-02-27 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| KR100576750B1 (ko) * | 2002-03-18 | 2006-05-03 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피장치 및 디바이스제조방법 |
| US7170587B2 (en) * | 2002-03-18 | 2007-01-30 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP3720788B2 (ja) * | 2002-04-15 | 2005-11-30 | キヤノン株式会社 | 投影露光装置及びデバイス製造方法 |
| DE10219514A1 (de) * | 2002-04-30 | 2003-11-13 | Zeiss Carl Smt Ag | Beleuchtungssystem, insbesondere für die EUV-Lithographie |
| WO2005040927A2 (en) | 2003-10-18 | 2005-05-06 | Carl Zeiss Smt Ag | Device and method for illumination dose adjustments in microlithography |
| US7023524B2 (en) * | 2003-12-18 | 2006-04-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7030958B2 (en) * | 2003-12-31 | 2006-04-18 | Asml Netherlands B.V. | Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method |
| DE102004002415B4 (de) | 2004-01-16 | 2008-07-10 | Metzeler Automotive Profile Systems Gmbh | Vorrichtung zum Steuern und Überwachen eines bewegbaren Schliesselements, insbesondere einer elektrisch angetriebenen Fensterscheibe eines Kraftfahrzeugs |
| US20060103828A1 (en) * | 2004-11-17 | 2006-05-18 | David Douglas J | Adjustable illumination blade assembly for photolithography scanners |
| US7088527B2 (en) * | 2004-12-28 | 2006-08-08 | Asml Holding N.V. | Uniformity correction system having light leak and shadow compensation |
| CN1645258A (zh) * | 2005-01-24 | 2005-07-27 | 中国科学院光电技术研究所 | 高数值孔径光刻成像偏振控制装置 |
| JP2006253487A (ja) * | 2005-03-11 | 2006-09-21 | Nikon Corp | 照明装置、投影露光方法、投影露光装置、及びマイクロデバイスの製造方法 |
| DE102006017336B4 (de) * | 2006-04-11 | 2011-07-28 | Carl Zeiss SMT GmbH, 73447 | Beleuchtungssystem mit Zoomobjektiv |
| JP4797764B2 (ja) * | 2006-04-14 | 2011-10-19 | 株式会社ニコン | 露光装置の較正方法及び露光装置 |
| NL1036162A1 (nl) | 2007-11-28 | 2009-06-02 | Asml Netherlands Bv | Lithographic apparatus and method. |
-
2008
- 2008-03-07 DE DE102008013229.2A patent/DE102008013229B4/de active Active
- 2008-11-20 CN CN201410006090.5A patent/CN103713474B/zh active Active
- 2008-11-20 JP JP2010537272A patent/JP5548135B2/ja active Active
- 2008-11-20 KR KR1020107014669A patent/KR101517645B1/ko active Active
- 2008-11-20 EP EP08859710.9A patent/EP2240830B1/en active Active
- 2008-11-20 WO PCT/EP2008/009786 patent/WO2009074211A1/en not_active Ceased
- 2008-11-20 CN CN200880120429.7A patent/CN101896869B/zh active Active
- 2008-12-10 TW TW97147987A patent/TWI474125B/zh active
-
2010
- 2010-05-28 US US12/789,772 patent/US8937708B2/en active Active
-
2014
- 2014-05-16 JP JP2014102463A patent/JP5888622B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP2240830A1 (en) | 2010-10-20 |
| KR20100110316A (ko) | 2010-10-12 |
| JP2011507241A (ja) | 2011-03-03 |
| WO2009074211A1 (en) | 2009-06-18 |
| US8937708B2 (en) | 2015-01-20 |
| TW200941149A (en) | 2009-10-01 |
| CN103713474B (zh) | 2016-06-01 |
| DE102008013229A1 (de) | 2009-06-18 |
| CN103713474A (zh) | 2014-04-09 |
| TWI474125B (zh) | 2015-02-21 |
| US20100253926A1 (en) | 2010-10-07 |
| JP2014179645A (ja) | 2014-09-25 |
| KR101517645B1 (ko) | 2015-05-04 |
| EP2240830B1 (en) | 2015-04-01 |
| CN101896869B (zh) | 2014-02-26 |
| CN101896869A (zh) | 2010-11-24 |
| JP5888622B2 (ja) | 2016-03-22 |
| DE102008013229B4 (de) | 2015-04-09 |
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