CN103700758B - LED (Light-emitting Diode) package unit, package methods thereof, and array area light source - Google Patents
LED (Light-emitting Diode) package unit, package methods thereof, and array area light source Download PDFInfo
- Publication number
- CN103700758B CN103700758B CN201310689080.1A CN201310689080A CN103700758B CN 103700758 B CN103700758 B CN 103700758B CN 201310689080 A CN201310689080 A CN 201310689080A CN 103700758 B CN103700758 B CN 103700758B
- Authority
- CN
- China
- Prior art keywords
- thin film
- optical thin
- led chip
- led
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 51
- 230000003287 optical effect Effects 0.000 claims abstract description 138
- 239000010409 thin film Substances 0.000 claims abstract description 138
- 238000004519 manufacturing process Methods 0.000 claims abstract description 33
- 238000009792 diffusion process Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 106
- 238000005538 encapsulation Methods 0.000 claims description 41
- 238000012856 packing Methods 0.000 claims description 26
- 238000007711 solidification Methods 0.000 claims description 26
- 230000008023 solidification Effects 0.000 claims description 26
- 238000009434 installation Methods 0.000 claims description 21
- 238000003780 insertion Methods 0.000 claims description 19
- 230000037431 insertion Effects 0.000 claims description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000003153 chemical reaction reagent Substances 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 238000010923 batch production Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 13
- 239000000499 gel Substances 0.000 description 11
- 238000013461 design Methods 0.000 description 10
- 238000012536 packaging technology Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000000016 photochemical curing Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to an LED (Light-emitting Diode) package unit, package methods thereof, and an array area light source. The LED package unit comprises an LED chip, a base plate for installing the LED chip, an optical thin film covering on the LED chip and a reflective layer, and a scattering component for uniformly scattering light emitted by the LED chip, wherein the base plate is covered with the reflective layer on an end face for installing the LED chip; a reflective piece is arranged at a position of the optical thin film along a vertical upper surface, corresponding to the LED chip; compared with an edge LED light guiding module, components such as a light guiding plate and a diffusion plate are omitted, so that the cost for manufacturing an area light source by utilizing the LED chip is effectively reduced. The invention also provides the array area light source, batch production is convenient, and the cost is reduced. The invention also provides two LED package methods, and through utilization of the LED package unit manufactured by the two methods, the cost for manufacturing the area light source by utilizing the LED light source can be effectively reduced.
Description
Technical field
The present invention relates to technical field of semiconductor illumination, more particularly, to a kind of led encapsulation unit and its method for packing and battle array
Row area source.
Background technology
LED light source has the advantages that life-span length, power saving, is therefore increasingly being applied to lighting field.
It is known that LED light source is typically spot light.At present LED light source is converted into area source by spot light mainly to adopt
The mode taking is, using light guide plate scattering principle, LED light source is made area source.Its concrete structure includes: using metal material system
Become framework, along frame side wall inner side be provided as the LED lamp bar of incident light source (wherein can be in the inner side of the four of framework side wall
Be respectively provided with LED lamp bar, also can on framework relative to two side walls inner side setting LED lamp bar), and inside framework arrange
This three part of the light-emitting area substantially vertical with this incident light source.Wherein light-emitting area is by order to reflect the light that LED lamp bar sends
Meal mating plate and in order to change and conduct light guide plate and diffuser plate of the light that LED lamp bar sends etc. composition.Formed LED lamp bar
The light sending changes into the side entering type leaded light module of the more uniform area source of brightness.
But above-mentioned side entering type leaded light module needs to arrange the components such as light guide plate, diffuser plate, reflector during fabrication, and it is significantly
Increased the manufacturing cost that LED light source is made area source.
Content of the invention
For above-mentioned deficiency of the prior art, it is an object of the invention to provide a kind of led encapsulation unit, it is effectively
Reduce the cost manufacturing area source using LED light source.
It is an object of the invention to provide a kind of led method for packing, can be had using the led encapsulation unit that the method produces
Reduce to effect the cost manufacturing area source using LED light source.
It is an object of the invention to provide a kind of array area source, it significantly reduces and manufactures face light using LED light source
The cost in source.
A kind of led encapsulation unit that the present invention provides, comprising:
Led chip,
For installing the substrate of described led chip, described substrate is coated with reflective on the end face installing described led chip
Layer,
Cover the optical thin film on described led chip and described reflector layer, in described optical thin film upper table vertically
It is provided with reflecting piece at corresponding described led chip on face, and,
The scattering component of the light homogenous diffusion for sending described led chip.
Optionally, it is formed with the cavity of vertically insertion at corresponding described led chip on described optical thin film, described reflective
Piece is covered in described cavity one end vertically, and described led chip is located at the inside of described cavity；
It is filled with phosphor gel in described cavity.
Optionally, described scattering component is the multiple blind holes being arranged on described optical thin film upper surface vertically.
Optionally, described blind hole be shaped as in cylinder, truncated cone, square and cuboid any one or many
Plant combination.
Optionally, described led chip formal dress or upside-down mounting be on the substrate.
Optionally, described substrate is soft base plate or one of metal substrate or ceramic substrate；
Described soft base plate is from top to bottom followed successively by circuit layer, dielectric layer and the gold for electrically connecting with described led chip
Belong to layer.
A kind of array area source that the present invention provides, including multiple above-mentioned led encapsulation units, multiple described led encapsulation
Unit becomes array to be distributed and forms a face array.
A kind of led method for packing that the present invention provides, comprising:
Manufacture substrate；
Reflector layer is covered and is used for the end face of led chip is installed in described substrate；
Described led chip is installed on the substrate；
Optical thin film is covered on described led chip and described reflector layer, described optical thin film solidifies and described
Blind hole is formed on optical thin film upper surface vertically；
The position of corresponding for reflecting piece described led chip is covered on described optical thin film upper surface vertically.
Optionally, described optical thin film is covered on described led chip and described reflector layer, the solidification of described optical thin film
And form blind hole on described optical thin film upper surface vertically, particularly as follows:
Described optical thin film is covered on described led chip and described reflector layer；
Before the solidification of described optical thin film, blind hole is formed on described optical thin film upper surface vertically by mould.
Optionally, described optical thin film is covered on described led chip and described reflector layer, the solidification of described optical thin film
And form blind hole on described optical thin film upper surface vertically, particularly as follows:
Described optical thin film is covered on described led chip and described reflector layer；
After the solidification of described optical thin film, by laser or chemical reagent on described optical thin film upper surface vertically
Form blind hole.
Optionally, described described led chip is installed on described substrate, particularly as follows:
Described led chip formal dress is installed or is flip-chip mounted on the substrate.
Optionally, described install described led chip includes on the substrate:
Multiple described led chips are installed on the substrate.
A kind of led method for packing that the present invention provides, comprising:
Manufacture substrate；
Reflector layer is covered and is used for the end face of led chip is installed in described substrate；
Optical thin film is covered on described reflector layer, described optical thin film solidification and in described optical thin film vertically
Upper surface on form blind hole, and corresponding installation forms vertically insertion at described led chip on described optical thin film
Cavity；
Described led chip is placed in described cavity and installs on the substrate；
Phosphor gel is coated in solidification in described cavity, and described led chip is covered；
The position of corresponding for reflecting piece described led chip is covered on described optical thin film upper surface vertically, and will
Described cavity covers.
Optionally, described optical thin film is covered on described reflector layer, described optical thin film solidification and in described light
Learn and form blind hole on film upper surface vertically, and corresponding installation is formed at described led chip on described optical thin film
The vertically cavity of insertion, particularly as follows:
Described optical thin film is covered on described reflector layer；
Before the solidification of described optical thin film, blind hole is formed on described optical thin film upper surface vertically by mould,
And form the cavity of vertically insertion at the described led chip of corresponding installation on described optical thin film.
Optionally, described optical thin film is covered on described reflector layer, described optical thin film solidification and in described light
Learn and form blind hole on film upper surface vertically, and corresponding installation is formed at described led chip on described optical thin film
The vertically cavity of insertion, particularly as follows:
Described optical thin film is covered on described reflector layer；
After the solidification of described optical thin film, by laser or chemical reagent on described optical thin film upper surface vertically
Form the cavity forming vertically insertion at blind hole, and the described led chip of corresponding installation on described optical thin film.
Optionally, described described led chip is placed in described cavity and installs on the substrate, particularly as follows:
Described led chip is placed in described cavity, and described led chip formal dress is installed or is flip-chip mounted in institute
State on substrate.
Optionally, described optical thin film is covered on described reflector layer, described optical thin film solidification and in described light
Learn and form blind hole on film upper surface vertically, and corresponding installation is formed at described led chip on described optical thin film
Vertically the cavity of insertion includes:
Optical thin film is covered on described reflector layer, described optical thin film solidification and in described optical thin film vertically
Upper surface on form blind hole, and on described optical thin film corresponding install to be formed at described led chip multiple vertically pass through
Logical cavity.
Compared with prior art, the led encapsulation unit that the present invention provides, it is coated with instead by being arranged on led chip
On the substrate of photosphere, using reflector layer and reflecting piece, the light that led chip sends is reflected, simultaneously will using scattering component
The light that led chip sends is reflected and is in uniform area scattering, thus the spot light that led chip is formed is converted into area source；
It, compared to side entering type leaded light module, eliminates the components such as light guide plate, diffuser plate, thus significantly reduce utilizing LED light source
Manufacture the cost of area source.
In further technical scheme, optical thin film forms the cavity being perfused with phosphor gel, using fluorescent material
Glue carries out covering to led chip, wraps up, thus the light that led chip is sent is converted into white light output.
In further technical scheme, scattering component be arranged at multiple blind on optical thin film upper surface vertically
Hole, controlling, by blind hole, the light that led chip sends is in uniform area scattering, thus the spot light that led chip is formed is converted into face
Light source.
In further technical scheme, led chip formal dress, on substrate, is easily installed setting.
In further technical scheme, led flip-chip on substrate, compared to led chip formal dress on substrate, its
Can skip bonding process, easily facilitate installation, be also equipped with more preferable heat dispersion simultaneously.
Compared with prior art, the array area source that the present invention provides, its packaging technology is simple, it is easy to accomplish, Duo Gefeng
Dress unit can be made with whole face, and multiple encapsulation units form a face array, directly send planar light from led encapsulation unit, make
Obtain design liberalization, the variation of area source；And be easy to produce in batches, reduce further manufacturing cost.
Compared with prior art, a kind of led method for packing that the present invention provides, the led encapsulation made using the method is single
Unit, led chip, by being arranged on led chip on the substrate being coated with reflector layer, is sent by it using reflector layer and reflecting piece
Light reflected, the light that led chip sends reflected and be in uniform area scattering using scattering component simultaneously, thus will
The spot light that led chip is formed is converted into area source；It, compared to side entering type leaded light module, eliminates light guide plate, diffuser plate etc.
Component, thus significantly reduce the cost manufacturing area source using LED light source.
Meanwhile, its packaging technology is simple, it is easy to accomplish, it is easy to produce in batches, thus reduce further manufacturing cost.
Compared with prior art, another kind of led method for packing that the present invention provides, is encapsulated using the led that the method is made
Unit, led chip, by being arranged on led chip on the substrate being coated with reflector layer, is sent out by it using reflector layer and reflecting piece
The light going out is reflected, and is reflected the light that led chip sends and is in uniform area scattering using scattering component simultaneously, thus will
The spot light that led chip is formed is converted into area source；It, compared to side entering type leaded light module, eliminates light guide plate, diffuser plate etc.
Component, thus significantly reduce the cost manufacturing area source using LED light source.
Meanwhile, its packaging technology is simple, it is easy to accomplish, it is easy to produce in batches, thus reduce further manufacturing cost.
Above-mentioned technical characteristic can combine in any suitable manner or to be substituted by equivalent technical characteristic, as long as can reach
To the purpose of the present invention.
Brief description
Hereinafter by based on only non-limiting embodiment and refer to the attached drawing is retouched in more detail to the present invention
State.Wherein:
The structural representation of led chip formal dress in the led encapsulation unit that Fig. 1 provides for the embodiment of the present invention one；
The structural representation of led flip-chip in the led encapsulation unit that Fig. 2 provides for the embodiment of the present invention one；
The procedure structure schematic diagram of the led method for packing that Fig. 3 to Fig. 7 provides for the embodiment of the present invention three；
The structural representation of the array area source that Fig. 8 provides for the embodiment of the present invention four；
The structural representation of led chip formal dress in the led encapsulation unit that Fig. 9 provides for the embodiment of the present invention five；
The structural representation of led flip-chip in the led encapsulation unit that Figure 10 provides for the embodiment of the present invention five；
The procedure structure schematic diagram of the led method for packing that Figure 11 to Figure 17 provides for the embodiment of the present invention seven；
The structural representation of the array area source of multiple led encapsulation unit compositions that Figure 18 provides for the embodiment of the present invention eight
Figure.
Brief description:
1-led chip；
2- substrate；3- reflector layer；
4- optical thin film, 41- cavity, 42- phosphor gel, 43- blind hole；
5- reflecting piece；6- mould.
Specific embodiment
For making the object, technical solutions and advantages of the present invention clearer, technical scheme will be carried out below
Clear, complete description, based on the specific embodiment in the present invention, those of ordinary skill in the art are not making creativeness
On the premise of work, obtained all other embodiment, broadly falls into the scope that the present invention is protected.
Before description specific embodiment, first the directionality noun occurring in the present invention is done defined below:
In led encapsulation unit, as shown in figure 1, the vertical direction along substrate 2 and optical thin film 4 is to specify in this patent
Vertical (direction shown in figure v)；Vertically deviate from substrate 2 one end be top, vertically towards substrate 2 one end be under
Side.
Embodiment one:
As shown in figure 1, the led encapsulation unit providing in the present embodiment, comprising: led chip 1, for installing led chip 1
Substrate 2, substrate 2 is coated with reflector layer 3 on the end face installing led chip 1, covers on led chip 1 and reflector layer 3
Optical thin film 4, is provided with reflecting piece 5 at correspondence led chip 1 on optical thin film 4 upper surface vertically, and, for inciting somebody to action
The scattering component of the light homogenous diffusion that led chip 1 sends.
It passes through led chip 1 is arranged on the substrate 2 being coated with reflector layer 3, will using reflector layer 3 and reflecting piece 5
The light that led chip 1 sends is reflected, and is reflected the light that led chip 1 sends and is in uniform surface using scattering component simultaneously
Scattering, thus the spot light that led chip 1 is formed is converted into area source；It, compared to side entering type leaded light module, eliminates leaded light
The components such as plate, diffuser plate, thus significantly reduce the cost manufacturing area source using LED light source.
Wherein, optical thin film 4 can be using in the light transmissive material such as silica gel, silicones, epoxy resin, modified epoxy
Any one or more combination is made.
In the present embodiment, scattering component is to be arranged on (to deviate from the end of substrate 2 on optical thin film 4 upper surface vertically
Face) multiple blind holes 43.It controls the light that sends of led chip 1 by blind hole 43 is in uniform area scattering, thus by led chip 1 shape
The spot light becoming is converted into area source.Further, blind hole 43 be shaped as cylinder, truncated cone, square and rectangular
Any one or more combination in body.
It should be noted that the scattering component providing in the present invention is to be arranged on optical thin film 4 upper surface vertically
Multiple blind holes 43.It will be appreciated that scattering component concrete structure is not unique, the light that led chip 1 sends can be carried out by other
It is in the uniform area scattering spot light of finally realizing forming led chip 1 is converted into the scattering component that area source exports after refraction,
Simply the replacement of simple technical scheme, all should fall into protection scope of the present invention.
In the present embodiment, led chip 1 formal dress on a substrate 2, as shown in Figure 1.
In the present embodiment, led chip 1 also can upside-down mounting on a substrate 2, as shown in Figure 2.
In the present embodiment, substrate 2 is soft base plate 2 or one of metal substrate 2 or ceramic substrate 2.
Wherein, preferably adopt soft base plate 2, and soft base plate 2 is from top to bottom followed successively by the electricity electrically connecting with led chip 1
Road floor, dielectric layer and metal level.Further, circuit layer etches required circuit by design requirement, its circuit connects
Mode can be one of serial or parallel connection or two kinds of combinations.
Embodiment two:
The led method for packing providing in the present embodiment, comprising:
Step 101, manufacture substrate 2；
Step 102, reflector layer 3 is covered it is used for the end face of led chip 1 is installed in described substrate 2；
Step 103, described led chip 1 is arranged on described substrate 2；
Step 104, optical thin film 4 is covered on described led chip 1 and described reflector layer 3, described optical thin film 4 is solid
Change and blind hole 43 is formed on described optical thin film 4 upper surface vertically；
Step 105, the position of corresponding for reflecting piece 5 described led chip 1 is covered in vertically upper of described optical thin film 4
On surface.
The led method for packing that the present embodiment provides, the led encapsulation unit made using the method, it passes through led chip
1 is arranged on the substrate 2 being coated with reflector layer 3, is reflected, using reflector layer 3 and reflecting piece 5, the light that led chip 1 sends,
The light that led chip 1 sends is reflected and it is in uniform area scattering using scattering component simultaneously, thus led chip 1 is formed
Spot light is converted into area source；It, compared to side entering type leaded light module, eliminates the components such as light guide plate, diffuser plate, thus effectively
Reduce using LED light source manufacture area source cost.
Meanwhile, its packaging technology is simple, it is easy to accomplish, it is easy to produce in batches, thus reduce further manufacturing cost.
Embodiment three:
The led method for packing providing in the present embodiment, comprising:
Step 201, manufacture substrate 2；
Step 202, reflector layer 3 is covered it is used for the end face of led chip 1 is installed in described substrate 2；
Step 203, described led chip 1 is arranged on described substrate 2；
Step 204, described optical thin film 4 is covered on described led chip 1 and described reflector layer 3；
Step 205, described optical thin film 4 solidification before, by mould 6 in described optical thin film 4 upper surface vertically
Upper formation blind hole 43；
Step 206, the position of corresponding for reflecting piece 5 described led chip 1 is covered in vertically upper of described optical thin film 4
On surface.
Wherein, step 204 and step 205 also can be replaced:
Step 304, described optical thin film 4 is covered on described led chip 1 and described reflector layer 3；
Step 305, after the solidification of described optical thin film 4, by laser or chemical reagent in described optical thin film 4 vertically
Upper surface on formed blind hole 43.
Wherein, when substrate 2 adopts soft base plate 2, manufacture substrate 2 and include: substrate 2 is by being divided into circuit layer, dielectric under upper
Layer and metal level, etch required circuit by design requirement, its circuit connecting mode can be in serial or parallel connection on circuit layer
One or two combination.
Wherein, the solidification in step 205 and step 305 can adopt temperature-curable or photocuring etc..
Wherein, in step 203, described led chip 1 is arranged on described substrate 2, can pacify using by led chip 1 formal dress
It is attached on substrate 2, detailed process is to fixedly mount on a substrate 2 by processes such as die bond, dispensing, routings by led chip 1, its
It is easily installed setting, refer to shown in Fig. 3.
Meanwhile, also can be using led chip 1 be flip-chip mounted on substrate 2, detailed process is through dispensing, cure package
On a substrate 2, it compared to led chip 1 formal dress on a substrate 2, can skip bonding process, easily facilitates installation, also has simultaneously
Standby more preferable heat dispersion, refers to shown in Fig. 7.
In order to make it easy to understand, the led method for packing providing in the present embodiment, refer to the procedure structure shown in Fig. 3 to Fig. 7
Schematic diagram, specific:
Step 201 refers to shown in Fig. 3 to step step 204, and wherein in step 203, led chip 1 inverted structure refers to
Shown in Fig. 7；
Step 205 refers to shown in Fig. 4；
Step 206 refers to shown in Fig. 6；
Step 304 and step 305 can refer to shown in Fig. 5.
In the present embodiment, for the ease of multiple led encapsulation units are formed array area source, step 201 can be also: will be many
Individual led chip 1 is installed on a substrate 2.Concrete structure refers to shown in Fig. 8.
Need it is further noted that when installing on a substrate 2 multiple led chips 1, multiple led chips 1 can equal formal dress
Install on a substrate 2；Multiple led chips 1 also can all be flip-chip mounted on a substrate 2 in the same manner；Further, multiple led chips 1 can
Part takes formal dress to install, and is partly flip-chip mounted.Depending on its concrete mounting means needs according to actual manufacture process and design,
But all should fall into protection scope of the present invention.
Example IV:
As shown in figure 8, the array area source providing in the present embodiment, including any one of multiple above-described embodiments one
Led encapsulation unit, multiple led encapsulation units become array to be distributed and form a face array.
Its packaging technology is simple, it is easy to accomplish, multiple encapsulation units can be made with whole face, and multiple encapsulation units form one
Face array, directly sends planar light so that the design liberalization of area source, variation from led encapsulation unit；And it is raw to be easy to batch
Produce, reduce further manufacturing cost.
Embodiment five:
As shown in figure 9, the led encapsulation unit providing in the present embodiment, comprising: led chip 1, for installing led chip 1
Substrate 2, substrate 2 is coated with reflector layer 3 on the end face installing led chip 1, covers on led chip 1 and reflector layer 3
Optical thin film 4, is provided with reflecting piece 5 at correspondence led chip 1 on optical thin film 4 upper surface vertically, and, for inciting somebody to action
The scattering component of the light homogenous diffusion that led chip 1 sends.
It passes through led chip 1 is arranged on the substrate 2 being coated with reflector layer 3, will using reflector layer 3 and reflecting piece 5
The light that led chip 1 sends is reflected, and is reflected the light that led chip 1 sends and is in uniform surface using scattering component simultaneously
Scattering, thus the spot light that led chip 1 is formed is converted into area source；It, compared to side entering type leaded light module, eliminates leaded light
The components such as plate, diffuser plate, thus significantly reduce the cost manufacturing area source using LED light source.
Wherein, optical thin film 4 can be using in the light transmissive material such as silica gel, silicones, epoxy resin, modified epoxy
Any one or more combination is made.
In the present embodiment, due to what led chip 1 sent itself, just there is the (for example blue, green, red of certain color
Color etc.), and current led chip 1 to apply more be white light.For this reason, can correspond on optical thin film 4 being formed at led chip 1
There is the cavity 41 of vertically insertion, reflecting piece 5 is covered in cavity 41 one end vertically, led chip 1 is located at the interior of cavity 41
Portion；It is filled with phosphor gel 42 in cavity 41.The colored light that led chip 1 sends is converted into white by phosphor gel 42 by it
Send again after light.
It should be noted that cavity 41 should be filled full and be covered on led chip 1 by phosphor gel 42, further should
Ensure led chip 1 is completely covered, that is, ensure that the light that led chip 1 sends all sends out after phosphor gel 42 again.
Wherein, phosphor gel 42 is to be mixed in proportion by fluorescent material, fluorescent glue, organic solvent etc.；Further, glimmering
Light powder is made up of any one or more mixing in yellow fluorescent powder, red fluorescence powder, green emitting phosphor etc., and concrete regarding is chosen
Led chip 1 depending on.
In the present embodiment, scattering component is to be arranged on (to deviate from the end of substrate 2 on optical thin film 4 upper surface vertically
Face) multiple blind holes 43.It controls the light that sends of led chip 1 by blind hole 43 is in uniform area scattering, thus by led chip 1 shape
The spot light becoming is converted into area source.Further, any one in the cylindrically shaped, square and cuboid of blind hole 43
Or multiple combination.
It should be noted that the scattering component providing in the present invention is to be arranged on optical thin film 4 upper surface vertically
Multiple blind holes 43.It will be appreciated that scattering component concrete structure is not unique, the light that led chip 1 sends can be carried out by other
It is in the uniform area scattering spot light of finally realizing forming led chip 1 is converted into the scattering component that area source exports after refraction,
Simply the replacement of simple technical scheme, all should fall into protection scope of the present invention.
In the present embodiment, led chip 1 formal dress on a substrate 2, as shown in Figure 9.
In the present embodiment, led chip 1 also can upside-down mounting on a substrate 2, as shown in Figure 10.
In the present embodiment, substrate 2 is soft base plate 2 or one of metal substrate 2 or ceramic substrate 2.
Wherein, preferably adopt soft base plate 2, and soft base plate 2 is from top to bottom followed successively by the electricity electrically connecting with led chip 1
Road floor, dielectric layer and metal level.Further, circuit layer etches required circuit by design requirement, its circuit connects
Mode can be one of serial or parallel connection or two kinds of combinations.
Embodiment six:
The led method for packing providing in the present embodiment, comprising:
Step 401, manufacture substrate 2；
Step 402, reflector layer 3 is covered it is used for the end face of led chip 1 is installed in described substrate 2；
Step 403, optical thin film 4 is covered on described reflector layer 3, described optical thin film 4 solidifies and in described light
Learn and form blind hole 43 on film 4 upper surface vertically, and at the described led chip 1 of corresponding installation on described optical thin film 4
Form the cavity 41 of vertically insertion；
Step 404, described led chip 1 is placed in described cavity 41 and is arranged on described substrate 2；
Step 405, phosphor gel 42 is sprayed dispensing and solidify in described cavity 41, and described led chip 1 is covered；
Step 406, the position of corresponding for reflecting piece 5 described led chip 1 is covered in vertically upper of described optical thin film 4
On surface, and described cavity 41 is covered.
The led method for packing that the present embodiment provides, the led encapsulation unit made using the method, it passes through led chip
1 is arranged on the substrate 2 being coated with reflector layer 3, is reflected, using reflector layer 3 and reflecting piece 5, the light that led chip 1 sends,
The light that led chip 1 sends is reflected and it is in uniform area scattering using scattering component simultaneously, thus led chip 1 is formed
Spot light is converted into area source；It, compared to side entering type leaded light module, eliminates the components such as light guide plate, diffuser plate, thus effectively
Reduce using LED light source manufacture area source cost.
Meanwhile, its packaging technology is simple, it is easy to accomplish, it is easy to produce in batches, thus reduce further manufacturing cost.
In the present embodiment, for the ease of multiple led encapsulation units are formed array area source, step 403 can be also:
Optical thin film 4 is covered on described reflector layer 3, described optical thin film 4 solidifies and on described optical thin film 4 edge
Form blind hole 43 on vertical upper surface, and formed multiple at the described led chip 1 of corresponding installation on described optical thin film 4
The vertically cavity 41 of insertion.
Then multiple led chips 1 are placed in described cavity 41 and are arranged on described substrate 2, led chip 1 with empty
The quantity in chamber 41 is identical and corresponds, and that is, the corresponding cavity 41 of each led chip 1 is configured.
Need it is further noted that when installing on a substrate 2 multiple led chips 1, multiple led chips 1 can equal formal dress
Install on a substrate 2；Multiple led chips 1 also can all be flip-chip mounted on a substrate 2 in the same manner；Further, multiple led chips 1 can
Part takes formal dress to install, and is partly flip-chip mounted.Depending on its concrete mounting means needs according to actual manufacture process and design,
But all should fall into protection scope of the present invention.
Embodiment seven:
The led method for packing providing in the present embodiment, comprising:
Step 501, manufacture substrate 2；
Step 502, reflector layer 3 is covered it is used for the end face of led chip 1 is installed in described substrate 2；
Step 503, described optical thin film 4 is covered on described reflector layer 3；
Step 504, described optical thin film 4 solidification before, by mould 6 in described optical thin film 4 upper surface vertically
Upper formation blind hole 43, and at the described led chip 1 of corresponding installation on described optical thin film 4, form the cavity of vertically insertion
41；
Step 505, described led chip 1 is placed in described cavity 41 and is arranged on described substrate 2；
Step 506, phosphor gel 42 is sprayed dispensing and solidify in described cavity 41, and described led chip 1 is covered；
Step 507, the position of corresponding for reflecting piece 5 described led chip 1 is covered in vertically upper of described optical thin film 4
On surface, and described cavity 41 is covered.
Wherein, step 503 and step 504 also can be replaced:
Step 603, described optical thin film 4 is covered on described reflector layer 3；
Step 604, after the solidification of described optical thin film 4, by laser or chemical reagent in described optical thin film 4 vertically
Upper surface on form blind hole 43, and on described optical thin film 4 corresponding install to be formed at described led chip 1 vertically pass through
Logical cavity 41.
Wherein, when substrate 2 adopts soft base plate 2, manufacture substrate 2 and include: substrate 2 is by being divided into circuit layer, dielectric under upper
Layer and metal level, etch required circuit by design requirement, its circuit connecting mode can be in serial or parallel connection on circuit layer
One or two combination.
Wherein, the solidification in step 504, step 506 and step 604 can adopt temperature-curable or photocuring etc..
Wherein, in step 505, described led chip 1 is placed in described cavity 41 and is arranged on described substrate 2, can
It is installed on substrate 2 using by led chip 1 formal dress, detailed process is by led chip 1 by processes such as die bond, dispensing, routings
On a substrate 2, it is easily installed setting, refers to shown in Figure 14 for fixed installation.
Meanwhile, also can be using led chip 1 be flip-chip mounted on substrate 2, detailed process is through dispensing, cure package
On a substrate 2, it compared to led chip 1 formal dress on a substrate 2, can skip bonding process, easily facilitates installation, also has simultaneously
Standby more preferable heat dispersion, refers to shown in Figure 17.
In order to make it easy to understand, the led method for packing providing in the present embodiment, refer to the process knot shown in Figure 11 to Figure 17
Structure schematic diagram, specific:
Step 501 refers to shown in Figure 11 to step step 503；
Step 504 refers to shown in Figure 12；
In step 505, when led chip 1 adopts formal dress to install, refer to shown in Figure 14, when led chip 1 adopts upside-down mounting
Refer to shown in Figure 17 during installation；
Step 506 refers to shown in Figure 15；
Step 507 refers to shown in Figure 16；
Step 603 and step 604 can refer to shown in Figure 13.
In the present embodiment, for the ease of multiple led encapsulation units are formed array area source, step 503 and step 504 are also
Can be:
Step 703, described optical thin film 4 is covered on described reflector layer 3；
Step 704, described optical thin film 4 solidification before, by mould 6 in described optical thin film 4 upper surface vertically
Upper formation blind hole 43, and on described optical thin film 4, corresponding installation forms multiple vertically insertions at described led chip 1
Cavity 41.Concrete structure is with reference to shown in Figure 18.
In the same manner, step 603 and step 604 can be also:
Step 803, described optical thin film 4 is covered on described reflector layer 3；
Step 804, after the solidification of described optical thin film 4, by laser or chemical reagent in described optical thin film 4 vertically
Upper surface on form blind hole 43, and corresponding installation forms multiple edges and hangs down at described led chip 1 on described optical thin film 4
Cavity 41 to insertion.Concrete structure is with reference to shown in Figure 18.
Then multiple led chips 1 are placed in described cavity 41 and are arranged on described substrate 2, led chip 1 with empty
The quantity in chamber 41 is identical and corresponds, and that is, the corresponding cavity 41 of each led chip 1 is configured.
Need it is further noted that when installing on a substrate 2 multiple led chips 1, multiple led chips 1 can equal formal dress
Install on a substrate 2；Multiple led chips 1 also can all be flip-chip mounted on a substrate 2 in the same manner；Further, multiple led chips 1 can
Part takes formal dress to install, and is partly flip-chip mounted.Depending on its concrete mounting means needs according to actual manufacture process and design,
But all should fall into protection scope of the present invention.
Embodiment eight:
As shown in figure 18, the array area source providing in the present embodiment, including any one of multiple above-described embodiments five institute
The led encapsulation unit stated, multiple led encapsulation units become array to be distributed and form a face array.
Its packaging technology is simple, it is easy to accomplish, multiple encapsulation units can be made with whole face, and multiple encapsulation units form one
Face array, directly sends planar light so that the design liberalization of area source, variation from led encapsulation unit；And it is raw to be easy to batch
Produce, reduce further manufacturing cost.
Last it is noted that embodiment of above and embodiment are only in order to illustrating technical scheme rather than right
It limits；Although being described in detail to the present invention with reference to aforementioned embodiments and embodiment, the ordinary skill of this area
Personnel are it is understood that it still can be modified to the technical scheme described in aforementioned embodiments or embodiment or right
Wherein some technical characteristics carry out equivalent；And these modifications or replacement, do not make the essence disengaging of appropriate technical solution
Embodiment of the present invention or the spirit and scope of embodiment technical scheme.
Claims (15)
1. a kind of led encapsulation unit, comprising:
Led chip,
For installing the substrate of described led chip, described substrate is coated with reflector layer on the end face installing described led chip,
Cover the optical thin film on described led chip and described reflector layer, on described optical thin film upper surface vertically
It is provided with reflecting piece at corresponding described led chip, and,
The scattering component of the light homogenous diffusion for sending described led chip；
It is formed with the cavity of vertically insertion, described reflecting piece is covered in institute at corresponding described led chip on described optical thin film
State cavity one end vertically, described led chip is located at the inside of described cavity；
It is filled with phosphor gel in described cavity.
2. led encapsulation unit according to claim 1 is it is characterised in that described scattering component is to be arranged on described optics
Multiple blind holes on film upper surface vertically.
3. led encapsulation unit according to claim 2 it is characterised in that described blind hole be shaped as cylinder, truncation circle
Any one or more combination in cone, square and cuboid.
4. led encapsulation unit according to claim 1 is it is characterised in that described led chip formal dress or be inverted in described base
On plate.
5. led encapsulation unit according to claim 1 it is characterised in that described substrate be soft base plate or metal substrate or
One of ceramic substrate；
Described soft base plate is from top to bottom followed successively by circuit layer, dielectric layer and the metal level for electrically connecting with described led chip.
6. a kind of array area source, including the led encapsulation unit any one of multiple claims 1 to 5, multiple described
Led encapsulation unit becomes array to be distributed and forms a face array.
7. a kind of led method for packing, comprising:
Manufacture substrate；
Reflector layer is covered and is used for the end face of led chip is installed in described substrate；
Described led chip is installed on the substrate；
Optical thin film is covered on described led chip and described reflector layer, described optical thin film solidifies and in described optics
Blind hole is formed on film upper surface vertically；
The position of corresponding for reflecting piece described led chip is covered on described optical thin film upper surface vertically.
8. led method for packing according to claim 7 is it is characterised in that described cover optical thin film in described led core
On piece and described reflector layer, described optical thin film solidifies and forms blind hole on described optical thin film upper surface vertically,
Particularly as follows:
Described optical thin film is covered on described led chip and described reflector layer；
Before the solidification of described optical thin film, blind hole is formed on described optical thin film upper surface vertically by mould.
9. led method for packing according to claim 7 is it is characterised in that described cover optical thin film in described led core
On piece and described reflector layer, described optical thin film solidifies and forms blind hole on described optical thin film upper surface vertically,
Particularly as follows:
Described optical thin film is covered on described led chip and described reflector layer；
After the solidification of described optical thin film, formed on described optical thin film upper surface vertically by laser or chemical reagent
Blind hole.
10. the led method for packing according to any one of claim 7 to 9 it is characterised in that described by described led chip
It is installed on described substrate, particularly as follows:
Described led chip formal dress is installed or is flip-chip mounted on the substrate.
11. led method for packing according to claim 10 it is characterised in that described described led chip is arranged on described
Include on substrate:
Multiple described led chips are installed on the substrate.
A kind of 12. led method for packing, comprising:
Manufacture substrate；
Reflector layer is covered and is used for the end face of led chip is installed in described substrate；
Optical thin film is covered on described reflector layer, described optical thin film solidification and in vertically upper of described optical thin film
The cavity forming vertically insertion at blind hole, and the described led chip of corresponding installation on described optical thin film is formed on surface；
Described led chip is placed in described cavity and installs on the substrate；
Phosphor gel is coated in solidification in described cavity, and described led chip is covered；
The position of corresponding for reflecting piece described led chip is covered on described optical thin film upper surface vertically, and will be described
Cavity covers.
13. led method for packing according to claim 12 are it is characterised in that described cover optical thin film described anti-
On photosphere, described optical thin film solidifies and forms blind hole on described optical thin film upper surface vertically, and described
Form the cavity of vertically insertion at the described led chip of corresponding installation on optical thin film, particularly as follows:
Described optical thin film is covered on described reflector layer；
Before the solidification of described optical thin film, blind hole is formed on described optical thin film upper surface vertically by mould, and
Form the cavity of vertically insertion at the described led chip of corresponding installation on described optical thin film.
14. led method for packing according to claim 12 are it is characterised in that described cover optical thin film described anti-
On photosphere, described optical thin film solidifies and forms blind hole on described optical thin film upper surface vertically, and described
Form the cavity of vertically insertion at the described led chip of corresponding installation on optical thin film, particularly as follows:
Described optical thin film is covered on described reflector layer；
After the solidification of described optical thin film, formed on described optical thin film upper surface vertically by laser or chemical reagent
Form the cavity of vertically insertion at blind hole, and the described led chip of corresponding installation on described optical thin film.
15. led method for packing according to any one of claim 12 to 14 it is characterised in that described by described led core
Piece is placed in described cavity and installs on the substrate, particularly as follows:
Described led chip is placed in described cavity, and described led chip formal dress is installed or is flip-chip mounted in described base
On plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310689080.1A CN103700758B (en) | 2013-12-16 | 2013-12-16 | LED (Light-emitting Diode) package unit, package methods thereof, and array area light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310689080.1A CN103700758B (en) | 2013-12-16 | 2013-12-16 | LED (Light-emitting Diode) package unit, package methods thereof, and array area light source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103700758A CN103700758A (en) | 2014-04-02 |
| CN103700758B true CN103700758B (en) | 2017-01-18 |
Family
ID=50362226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310689080.1A Expired - Fee Related CN103700758B (en) | 2013-12-16 | 2013-12-16 | LED (Light-emitting Diode) package unit, package methods thereof, and array area light source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103700758B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020214047A1 (en) * | 2019-04-15 | 2020-10-22 | Corning Incorporated | Backlight including patterned reflectors and method for fabricating the backlight |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104037302B (en) * | 2014-05-23 | 2017-04-26 | 常州市武进区半导体照明应用技术研究院 | LED (light-emitting diode) package assembly |
| CN107505769B (en) * | 2017-08-15 | 2021-02-26 | 京东方科技集团股份有限公司 | Backlight structure and display device |
| CN110085731A (en) * | 2018-01-25 | 2019-08-02 | 致伸科技股份有限公司 | Light source module |
| CN108957619B (en) * | 2018-07-25 | 2022-09-27 | 京东方科技集团股份有限公司 | Light guide assembly, manufacturing method of light guide assembly and backlight source |
| CN111106229A (en) * | 2018-10-29 | 2020-05-05 | 深圳Tcl新技术有限公司 | Side-emitting LED packaging structure and display device |
| CN112349822B (en) | 2019-08-09 | 2022-03-18 | 佛山市国星光电股份有限公司 | LED device and backlight module |
| JP7117684B2 (en) * | 2020-01-31 | 2022-08-15 | 日亜化学工業株式会社 | Manufacturing method of planar light source |
| CN111240094B (en) * | 2020-03-12 | 2022-12-09 | 京东方科技集团股份有限公司 | Area light source |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000123620A (en) * | 1999-11-08 | 2000-04-28 | Nichia Chem Ind Ltd | Sheet-form light source |
| JP2007188999A (en) * | 2006-01-12 | 2007-07-26 | Hitachi Lighting Ltd | Semiconductor light source device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100388080C (en) * | 2004-09-30 | 2008-05-14 | 晶元光电股份有限公司 | Light emitting device |
| CN2840332Y (en) * | 2005-10-18 | 2006-11-22 | 陈建华 | The light-focusing type large-power light-emitting diodes |
| CN101071232A (en) * | 2006-05-10 | 2007-11-14 | 奇美电子股份有限公司 | Planar lightsource device and its mkaing method, and liquid crystal display device with same |
| TWI433361B (en) * | 2011-04-06 | 2014-04-01 | Lustrous Green Technology Of Lighting | Led package structure for increasing light uniforming effect |
| KR101260855B1 (en) * | 2011-11-17 | 2013-05-07 | 주식회사 루멘스 | Light emitting device package and backlight unit comprising the same |
| CN103367565A (en) * | 2012-04-06 | 2013-10-23 | 展晶科技(深圳)有限公司 | Light-Emitting Diode (LED) packaging method |
| CN103244872B (en) * | 2013-05-10 | 2015-07-22 | 晶科电子（广州）有限公司 | Lens-free ultra-thin direct type backlight module |
| CN103296188B (en) * | 2013-05-27 | 2015-12-09 | 北京半导体照明科技促进中心 | LED encapsulation structure and preparation method thereof |
-
2013
- 2013-12-16 CN CN201310689080.1A patent/CN103700758B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000123620A (en) * | 1999-11-08 | 2000-04-28 | Nichia Chem Ind Ltd | Sheet-form light source |
| JP2007188999A (en) * | 2006-01-12 | 2007-07-26 | Hitachi Lighting Ltd | Semiconductor light source device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020214047A1 (en) * | 2019-04-15 | 2020-10-22 | Corning Incorporated | Backlight including patterned reflectors and method for fabricating the backlight |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103700758A (en) | 2014-04-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103700758B (en) | LED (Light-emitting Diode) package unit, package methods thereof, and array area light source | |
| US6909234B2 (en) | Package structure of a composite LED | |
| TWI271878B (en) | Molding process for light emitting diode lamps | |
| CN100411210C (en) | White light LED and packaging method thereof | |
| JP3164267U (en) | Lighting module | |
| CN103715340A (en) | LED packaging unit and LED packaging method and array surface light source | |
| CN202948972U (en) | White light light emitting diode (LED) module packaging structure | |
| CN101789483A (en) | Coating method of light-emitting diode fluorescent powder | |
| CN102185042A (en) | Light-emitting diode (LED) packaging method, packaging device and light adjusting method and system | |
| CN208208788U (en) | Led lamp bead | |
| CN106992241A (en) | LED light bar and LED area light source module | |
| CN102891242A (en) | LED (Light-Emitting Diode) package device | |
| CN103081567A (en) | Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration | |
| CN105633248B (en) | LED lamp and preparation method thereof | |
| CN108091752A (en) | A kind of white light LEDs and preparation method thereof | |
| CN101521257B (en) | Prefabricated fluorescent powder film type white light LED packaging structure and preparation method thereof | |
| CN103972222A (en) | LED (light-emitting diode) light source packaging method, LED light source packaging structure and light source module | |
| CN112234134A (en) | Fluorescent powder-free multi-primary-color LED packaging structure and packaging method thereof | |
| WO2009140829A1 (en) | A led lighting device with low attenuation and high luminous efficiency and manufacturing method thereof | |
| US20070131940A1 (en) | Color-mixing LED | |
| CN209104189U (en) | A kind of width colour gamut COB device | |
| KR100585916B1 (en) | Light emitting diode | |
| CN204067435U (en) | A kind of LED device and light source module and light source module | |
| CN201096279Y (en) | Light extraction colour tint even high power LED illuminating source device | |
| JP2010206208A (en) | Light emitting diode package structure and manufacturing method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210305 Address after: Building B7-1, shawen Ecological Industrial Park, national high tech Industrial Development Zone, Guiyang City, Guizhou Province Patentee after: Guizhou zhongshengtaike Intelligent Technology Co.,Ltd. Address before: 213164 7th Floor, Block B, 1st Building, Chuangyan Port, Changzhou Science and Education City, Jiangsu Province Patentee before: CHANGZHOU INSTITUTE OF TECHNOLOGY RESEARCH FOR SOLID STATE LIGHTING |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170118 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |