CN103680687A - Transparent conductive film and touch panel with conductive film - Google Patents
Transparent conductive film and touch panel with conductive film Download PDFInfo
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- CN103680687A CN103680687A CN201310452284.3A CN201310452284A CN103680687A CN 103680687 A CN103680687 A CN 103680687A CN 201310452284 A CN201310452284 A CN 201310452284A CN 103680687 A CN103680687 A CN 103680687A
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- optical layers
- nesa coating
- refractive index
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Abstract
The invention discloses a transparent conductive film and a touch panel with the conductive film. The transparent conductive film comprises a substrate layer, and a first optical layer, a second optical layer and a conductive layer which are successively arranged at one side of the substrate layer, wherein the refractive index of the first optical layer is greater than that of the second optical layer, the first optical layer is prepared by a silicon material, and the difference between the refractive indexes of the first and second optical layers is 1.85 to 3.1. The adhesion and weatherability of the transparent conductive film are improved to meet the requirement of a water boiling test; and the reflectivity difference between the reflected light which is formed by radiating external light to a pattern portion and the reflected light which is formed by radiating the light to position below a pattern opening portion is improved after patterning of the conductive layer, so that the etched pattern is not obvious.
Description
Technical field
The present invention relates to polymeric material field, relate in particular to a kind of nesa coating and there is the touch panel of this conducting film.
Background technology
Conventional nesa coating in contact panel, its performance directly affects the performance of described contact panel, and in prior art, described nesa coating generally comprises substrate layer, low-index layer and conductive layer, and this low-index layer is generally SiO
2after conductive layer pattern, be formed with the part (drafting department) of transparency conducting layer and do not form the part (pattern openings portion) of transparency conducting layer, but outside during this nesa coating of irradiation, light exposes to the reverberation of drafting department and light, and to expose to the catoptrical difference in reflectivity of the low-index layer under pattern openings portion larger, causes etched pattern obvious; And close outstanding property is poor.There is research to point out, the high refractive index layers that increase between substrate layer and low-index layer more, this high refractive index layer is generally Nb
2o
5, TiO
2, Ta
2o
5, Si
3n
4, the refractive index SiOx that is 1.5-1.9 etc., although can improving light after patterning, this method exposes to the catoptrical reflection differences that the reverberation of drafting department and light expose to the low-index layer under pattern openings portion, make etched pattern not obvious, but not obvious to the close outstanding property improvement of nesa coating.
Summary of the invention
In sum, the present invention is necessary to provide a kind of and can improves extraneous light after conductive layer pattern and expose to the catoptrical reflection differences that the reverberation of drafting department and light exposes under pattern openings portion and can improve the nesa coating of close outstanding performance again.
In addition, the present invention is also necessary to provide a kind of touch panel with above-mentioned conducting film.
A kind of nesa coating, comprise substrate layer, the first optical layers of being located at successively described substrate layer one side, the second optical layers and conductive layer, the refractive index of refractive index ratio second optical layers of described the first optical layers is large, described the first optical layers is to be made by silicon materials, and the specific refractivity of described the first optical layers and described the second optical layers is 1.85-3.1.
Wherein, the thickness of described the first optical layers is preferably 0.1-2nm; Be preferably further 0.3-2nm.
Wherein, the refractive index of described the first optical layers is 3.4-4.5, further preferred 3.9-4.3.
Wherein, the refractive index of described the second optical layers is 1.4-1.55.
Wherein, the thickness of described the second optical layers is 20nm-70nm.
Wherein, the further preferred 2.35-2.9 of the specific refractivity of described the first optical layers and described the second optical layers.
Wherein, at least conductive layer has carried out patterning, comprises the pattern openings portion that has the drafting department of transparency conducting layer and do not have conductive layer.
Catoptrical reflection differences △ R when reverberation when wherein, extraneous light exposes to drafting department and extraneous light expose under pattern openings portion is less than or equal to 1.5%.
Wherein, between described substrate layer and described the first optical layers and/or a side of relative described the first optical layers of described substrate layer be provided with hard conating (HC).
Wherein, described hard conating can be at least one in following material: melamine resin, carbamate resins, alkyd resins, acrylic resin, polysilicone.
Wherein, described silicon materials can be monocrystalline silicon or polysilicon.
Wherein, described substrate layer can comprise that following material makes: polyethylene terephthalate (PET), Merlon (PC), polyimides (PI), PEN (PEN) or cycloolefin analog copolymer (COP or COC).
Wherein, the thickness of described conductive layer is 20nm-45nm.
Wherein, described conductive layer can comprise that following material makes: ZnO transparent conductive glass (AZO) or the indium oxide gallium zinc (IGZO) of indium tin oxide (ITO), tin-antiomony oxide (ATO), aluminium doping.
Further, the preferred ITO of described conductive layer.
Wherein, in described ITO, tin oxide (SnO
2) mass percent can be 1wt%-10wt%.
Wherein, described the second optical layers can comprise that following material makes: magnesium fluoride (MgF
2), the oxide of silicon, the nitrogen oxide of silicon, further preferred silicon dioxide (SiO
2).
Wherein, above-mentioned nesa coating can adopt the conventional technological means of prior art to prepare, as methods such as sputter, evaporation, sputter, coating, electron guns.Be specially: under the condition of argon gas 100%, pressure 0.4Pa, use silicon materials sputter on the surface of described base material to form the first optical layers; Under vacuum environment, sputter the second optical layers on described the first optical layers surface; Under the condition of argon gas 95%, oxygen 5%, pressure 0.4Pa, adopt reaction sputtering method to form conductive layer on the surface of described the second optical layers; On conductive layer surface, be coated with the photoresist of predetermined pattern, carry out after dry solidification, in hydrochloric acid, flood 1 minute, carry out the patterning of conductive layer; , remove photoresist, obtain nesa coating thereafter.
Wherein, described nesa coating through burin-in process, that is, is placed in nesa coating at 150 ℃ and toasts 60 minutes, can cause the conductive layer crystallization in nesa coating, can reduce the sheet resistance of nesa coating, the light transmittance of raising nesa coating.
Nesa coating of the present invention can be widely used in field of electronics, is particularly applied on contact panel.
The present invention also provides a kind of touch panel, has above-described nesa coating.
Compare prior art, nesa coating of the present invention, adopts and be fabricated from a silicon the first optical layers, and the specific refractivity of described the first optical layers and described the second optical layers is 1.85-3.1, both improve close outstanding property and the weatherability of described nesa coating, reached the requirement of poach test; Improved again extraneous light after conductive layer pattern and exposed to the reverberation of drafting department and light and expose to the catoptrical reflection differences under pattern openings portion, made the etched pattern not obvious.
Accompanying drawing explanation
Fig. 1 is the generalized section of the nesa coating of the embodiment of the present invention.
Embodiment
Below in conjunction with some embodiments, nesa coating of the present invention and the touch panel with this conducting film are described further.Specific embodiment is for further describing the present invention, non-limiting protection scope of the present invention.
Nesa coating of the present invention carries out performance test according to following standard:
Close outstanding property test: electrically conducting transparent film sheet is placed in to 100 ℃ of boiling water and boils 2 hours, take out after cooling and test according to ASTM D3359-02 hundred lattice tests, be divided into following Three Estate according to performance: the best is zero from excellent to bad, represent function admirable; Preferably △, represents to pass, and can reach standard-required; The poorlyest represent not reach standard-required for X.
Sheet resistance test: Low ESR meter collocation four-point probe, ASTM D991.
Light transmittance test: full light haze meter, ASTM D1003.
Reflection differences △ R: the catoptrical difference in the time of under the reverberation of measurement drafting department and pattern openings portion, difference is larger, and circuit etching is more obvious, is divided into following Three Estate: the best is zero, △ R<1.0; Better △, 1.0≤△ R≤1.5; The poorest is X, △ R > 1.5.
Etched mark effect: conductive layer is etched to the induction line of diamond shaped, the obvious degree of visual its circuit etching; Be divided into following Three Estate: the best is zero, substantially can't see etched pattern; Preferably △, can observe trickle etched pattern; The poorest is X, obviously observes etched pattern.
In all embodiment provided by the invention, the raw material that provide all can obtain from market buying.
Nesa coating 100 as shown in Figure 1, comprises substrate layer 10, is located at successively the first optical layers 20, the second optical layers 30 and the conductive layer 40 of described substrate layer 10 1 sides; The refractive index of refractive index ratio second optical layers 30 of described the first optical layers 20 is large.Shown in conductive layer 40 comprise the drafting department 41 with transparency conducting layer and the pattern openings portion 42 without conductive layer.In the present embodiment, for reducing the reflection differences between drafting department 41 and pattern openings portion 42, preferably described the first optical layers 20 is 1.85-3.1 with the specific refractivity of described the second optical layers 30.The first optical layers 20 is for silicon materials make, and its refractive index is 3.4-4.5, the preferred 0.1-2nm of thickness, further preferred 0.3-2nm.The preferred 1.4-1.55 of refractive index of described the second optical layers 30, the preferred 20-70nm of thickness.Further, described substrate layer 10 can adopt those skilled in the art to think applicable material, concrete as: polyethylene terephthalate (PET), Merlon (PC), polyimides (PI), PEN (PEN) or cycloolefin analog copolymer (COP or COC).Described the second optical layers 30 can comprise that following material makes: magnesium fluoride (MgF
2), the oxide of silicon, the nitrogen oxide of silicon, further preferred silicon dioxide (SiO
2).Described conductive layer 40 can comprise that following material makes: ZnO transparent conductive glass (AZO) or the indium oxide gallium zinc (IGZO) of indium tin oxide (ITO), tin-antiomony oxide (ATO), aluminium doping.Further, the preferred ITO of described conductive layer 40, further, in described ITO, the mass percent of tin oxide is 1wt%-10wt%.
Embodiment 1-8
The PET that the thickness of usining is 125um (Mitsubishi resin manufacture), as substrate layer, under the condition of argon gas 100%, pressure 0.4Pa, is used polysilicon sputter on the surface of described base material to form the Si film of different-thickness, and its refractive index is 4.3; Under vacuum environment, on described Si film surface, sputter forms the SiO of different-thickness
2film, its refractive index is 1.46; Under the condition of argon gas 95%, oxygen 5%, pressure 0.4Pa, adopt reaction sputtering method at described SiO
2the surface of film forms ITO film.On conductive layer ITO film surface, be coated with the photoresist of diamond shaped, carry out after dry solidification, in hydrochloric acid, flood 1 minute, carry out the etching of ITO film., remove photoresist, obtain nesa coating thereafter.
The electrically conducting transparent film sheet making is placed at 150 ℃ and is toasted 60 minutes, according to the light transmittance of above-mentioned standard testing nesa coating, reflection differences △ R, close outstanding performance, sheet resistance, etched mark effect and be recorded in table 1.
Embodiment 9
The PET that the thickness of take is 125um (these PET both sides are equipped with hard conating, Japanese Dongshan system), as substrate layer, under the condition of argon gas 100%, pressure 0.4Pa, is used polysilicon sputter on the surface of described base material to form Si film, and its refractive index is 4.3; Under vacuum environment, on described Si film surface, sputter forms SiO
2film, its refractive index is 1.46; Under the condition of argon gas 95%, oxygen 5%, pressure 0.4Pa, adopt reaction sputtering method at described SiO
2the surface of film forms ITO film.On conductive layer ITO film surface, be coated with the photoresist of diamond shaped, carry out after dry solidification, in hydrochloric acid, flood 1 minute, carry out the etching of ITO film., remove photoresist, obtain nesa coating thereafter.
The electrically conducting transparent film sheet making is placed at 150 ℃ and is toasted 60 minutes, according to the light transmittance of above-mentioned standard testing nesa coating, reflection differences △ R, close outstanding performance, sheet resistance, etched mark effect and be recorded in table 1.
Comparative example 1-5
The PET that the thickness of usining is 125um (Mitsubishi resin manufacture) is as substrate layer, and under the condition of argon gas 100%, pressure 0.4Pa, on the surface of described base material, sputter forms Nb
2o
5film (refractive index is 2.3), TiO
2film (refractive index is 2.3), Ta
2o
5film (refractive index is 2.2), Si
3n
4film (refractive index is 2.0) or SiOx film (refractive index is 1.9); Under vacuum environment, on described the first optical layers surface, sputter forms SiO
2film, its refractive index is 1.46; Under the condition of argon gas 95%, oxygen 5%, pressure 0.4Pa, adopt reaction sputtering method at described SiO
2the surface of film forms ITO film.On conductive layer ITO film surface, be coated with the photoresist of diamond shaped, carry out after dry solidification, in hydrochloric acid, flood 1 minute, carry out the etching of ITO film., remove photoresist, obtain nesa coating thereafter.
The electrically conducting transparent film sheet making is placed at 150 ℃ and is toasted 60 minutes, according to the light transmittance of above-mentioned standard testing nesa coating, reflection differences △ R, close outstanding performance, sheet resistance, etched mark effect and be recorded in table 2.
Comparative example 6
The PET that the thickness of take is 125um (these PET both sides are equipped with hard conating, Japanese Dongshan system) is as substrate layer, and under the condition of argon gas 100%, pressure 0.4Pa, on the surface of described base material, sputter forms Ta
2o
5film, its refractive index is 2.2; Under vacuum environment, at described Ta
2o
5on film surface, sputter forms SiO
2film, its refractive index is 1.46; Under the condition of argon gas 95%, oxygen 5%, pressure 0.4Pa, adopt reaction sputtering method at described SiO
2the surface of film forms ITO film.On conductive layer ITO film surface, be coated with the photoresist of diamond shaped, carry out after dry solidification, in hydrochloric acid, flood 1 minute, carry out the etching of ITO film., remove photoresist, obtain nesa coating thereafter.
The electrically conducting transparent film sheet making is placed at 150 ℃ and is toasted 60 minutes, according to the light transmittance of above-mentioned standard testing nesa coating, reflection differences △ R, close outstanding performance, sheet resistance, etched mark effect and be recorded in table 2.
Table 1
Table 2
The first optical layers of nesa coating of the present invention is due to the factor impacts such as degree of crystallinity of silicon materials, and the value range of its refractive index is 3.4-4.5, further preferred 3.9-4.5; The refractive index of the first optical layers adopting in embodiment of the present invention 1-9 is 4.1.
The second optical layers adopts the magnesium fluoride of refractive index within the scope of 1.4-1.55, the oxide of silicon conventionally, and the nitrogen oxide of silicon further preferably adopts SiO
2; In embodiment of the present invention 1-9, adopt SiO
2(refractive index is 1.46).
In the embodiment of the present invention, the specific refractivity of the refractive index of the first optical layers and the second optical layers is 2.64, and the etched mark effect of its nesa coating all not obvious and close outstanding property is good.On this basis, the inventor finds through test of many times, the silicon materials refractive index of the first optical layers is within the scope of 3.4-4.5, the refractive index of the second optical layers is within the scope of 1.4-1.55, the specific refractivity of the refractive index of the first optical layers and the second optical layers is within the scope of 1.85-3.1, and the etched mark effect of its nesa coating all not obvious and close outstanding property is good.
The first optical layers in comparative example 1-6 adopts and conventionally adopts the material that refractive index is 1.9-2.3, as Nb
2o
5(refractive index is 2.3), TiO
2(refractive index is 2.3), Ta
2o
5(refractive index is 2.2), Si
3n
4(refractive index is 2.0), SiOx(refractive index are 1.9); The magnesium fluoride of the more normal selective refraction rate of those skilled in the art within the scope of 1.4-1.55, the oxide of silicon, the nitrogen oxide of silicon, further preferably adopts SiO
2; In comparative example 1-6 of the present invention, adopt SiO
2(refractive index is 1.46).In prior art, the specific refractivity of the refractive index of the first optical layers and the second optical layers is 0.35-0.9, is conventionally no more than 1.0, and the etched mark effect of its nesa coating and close outstanding property are all not as good as the present invention's nesa coating required for protection.
From embodiment 4-6, can find out, in the present invention, the thickness of the second optical layers of nesa coating increases, and light transmittance is also improved.Therefore, the preferred 20-70nm of the present invention's the second optical layers.
And, from embodiment 1-9, can find out, in nesa coating of the present invention, catoptrical reflection differences △ R when reverberation when extraneous light exposes to drafting department and extraneous light expose under pattern openings portion is less than or equal to 1.5%.
The foregoing is only embodiments of the invention; not thereby limit the scope of the claims of the present invention; every equivalent structure or conversion of equivalent flow process that utilizes description of the present invention to do; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (12)
1. a nesa coating, comprise substrate layer, be located at described substrate layer one side the first optical layers, the second optical layers and conductive layer successively, the refractive index of refractive index ratio second optical layers of described the first optical layers is large, it is characterized in that: described the first optical layers is to be made by silicon materials, and the specific refractivity of described the first optical layers and described the second optical layers is 1.85-3.1.
2. nesa coating as claimed in claim 1, is characterized in that: the thickness of described the first optical layers is 0.1-2nm.
3. nesa coating as claimed in claim 1 or 2, is characterized in that: the refractive index of described the first optical layers is 3.4-4.5.
4. nesa coating as claimed in claim 3, is characterized in that: the refractive index of described the first optical layers is 3.9-4.3.
5. nesa coating as claimed in claim 4, is characterized in that: the refractive index of described the first optical layers is 4.1.
6. nesa coating as claimed in claim 1 or 2, is characterized in that: the refractive index of described the second optical layers is 1.4-1.55.
7. nesa coating as claimed in claim 1 or 2, is characterized in that: the thickness of described the second optical layers is 20nm-70nm.
8. nesa coating as claimed in claim 1 or 2, is characterized in that: at least conductive layer has carried out patterning, comprises the pattern openings portion that has the drafting department of transparency conducting layer and do not have conductive layer.
9. nesa coating as claimed in claim 8, is characterized in that: catoptrical reflection differences △ R when reverberation when extraneous light exposes to drafting department and extraneous light expose under pattern openings portion is less than or equal to 1.5%.
10. nesa coating as claimed in claim 1 or 2, is characterized in that: between described substrate layer and described the first optical layers and/or a side of relative described the first optical layers of described substrate layer be provided with hard conating.
11. nesa coatings as claimed in claim 1 or 2, is characterized in that: the thickness of described conductive layer is 20nm-45nm.
12. 1 kinds of touch panels, is characterized in that: have the nesa coating as described in any one in claim 1 to 11.
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| CN102985898A (en) * | 2010-07-09 | 2013-03-20 | 捷恩智株式会社 | Transparent conductive film and method for producing same |
| CN103280256A (en) * | 2013-06-26 | 2013-09-04 | 汕头万顺包装材料股份有限公司光电薄膜分公司 | Transparent conductive film |
| CN103324324A (en) * | 2012-03-21 | 2013-09-25 | 台达电子工业股份有限公司 | Touch screen with optical compensation structure |
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2013
- 2013-09-27 CN CN201310452284.3A patent/CN103680687A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010137447A (en) * | 2008-12-12 | 2010-06-24 | Toyobo Co Ltd | Transparent conductive laminate film |
| CN102985898A (en) * | 2010-07-09 | 2013-03-20 | 捷恩智株式会社 | Transparent conductive film and method for producing same |
| CN102543267A (en) * | 2010-11-04 | 2012-07-04 | 日东电工株式会社 | Transparent conductive film and touch panel |
| CN103324324A (en) * | 2012-03-21 | 2013-09-25 | 台达电子工业股份有限公司 | Touch screen with optical compensation structure |
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Owner name: SHANTOU WANSHUN PACKAGE MATERIAL CO., LTD. Free format text: FORMER OWNER: OPTOELECTRONIC FILM BRANCH COMPANY, SHANTOU WANSHUN PACKING MATERIAL CO., LTD. Effective date: 20150522 Owner name: OPTOELECTRONIC FILM BRANCH COMPANY, SHANTOU WANSHU Effective date: 20150522 |
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Effective date of registration: 20150522 Address after: Shantou Free Trade Zone Wanshun Industrial Park, Haojiang District 515078 Guangdong city of Shantou Province Applicant after: Shantou Wanshun Packaging Materials Co., Ltd. Applicant after: Optical and Electrical Films Branch Company of Shantou Wanshun Package Material Stock Co., Ltd. Address before: 515078 Guangdong city of Shantou province Haojiang District in the bonded area 1, 2, A01-2 block 3 Applicant before: Optical and Electrical Films Branch Company of Shantou Wanshun Package Material Stock Co., Ltd. |
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Application publication date: 20140326 |