CN103668124B - 化学气相沉积设备的基材保持器 - Google Patents

化学气相沉积设备的基材保持器 Download PDF

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Publication number
CN103668124B
CN103668124B CN201310631567.4A CN201310631567A CN103668124B CN 103668124 B CN103668124 B CN 103668124B CN 201310631567 A CN201310631567 A CN 201310631567A CN 103668124 B CN103668124 B CN 103668124B
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China
Prior art keywords
section
substrate
wall
recess
substrate retainer
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CN201310631567.4A
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English (en)
Chinese (zh)
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CN103668124A (zh
Inventor
J·穆尔德
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Aixtron SE
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Aixtron SE
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
CN201310631567.4A 2012-09-24 2013-09-24 化学气相沉积设备的基材保持器 Active CN103668124B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102012108986.8 2012-09-24
DE201210108986 DE102012108986A1 (de) 2012-09-24 2012-09-24 Substrathalter einer CVD-Vorrichtung

Publications (2)

Publication Number Publication Date
CN103668124A CN103668124A (zh) 2014-03-26
CN103668124B true CN103668124B (zh) 2019-07-23

Family

ID=50235079

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310631567.4A Active CN103668124B (zh) 2012-09-24 2013-09-24 化学气相沉积设备的基材保持器

Country Status (3)

Country Link
CN (1) CN103668124B (de)
DE (1) DE102012108986A1 (de)
TW (1) TWI576952B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014100024A1 (de) * 2014-01-02 2015-07-02 Aixtron Se Vorrichtung zur Anordnung von Substraten, insbesondere Suszeptor eines CVD-Reaktors
DE102014114947A1 (de) 2014-05-16 2015-11-19 Aixtron Se Vorrichtung zum Abscheiden von Halbleiterschichten sowie einen Suszeptor zur Verwendung in einer derartigen Vorrichtung
DE102014109327A1 (de) * 2014-07-03 2016-01-07 Aixtron Se Beschichtetes flaches scheibenförmiges Bauteil in einem CVD-Reaktor
DE102015118215A1 (de) 2014-11-28 2016-06-02 Aixtron Se Substrathaltevorrichtung mit vereinzelten Tragvorsprüngen zur Auflage des Substrates
CN107275438B (zh) * 2014-12-24 2019-04-05 新奥光伏能源有限公司 异质结太阳能电池的制作方法以及用于生产电池的模具
DE102016103530A1 (de) * 2016-02-29 2017-08-31 Aixtron Se Substrathaltevorrichtung mit aus einer Ringnut entspringenden Tragvorsprüngen
DE102016115614A1 (de) 2016-08-23 2018-03-01 Aixtron Se Suszeptor für einen CVD-Reaktor
DE102018107135A1 (de) 2018-03-26 2019-09-26 Aixtron Se Mit einer individuellen Kennung versehenes Bauteil einer CVD-Vorrichtung sowie Verfahren zur Übermittlung von Informationen
CN110373654B (zh) * 2018-04-13 2021-09-17 北京北方华创微电子装备有限公司 叉指结构、下电极装置和工艺腔室
DE102021003326B3 (de) * 2021-06-28 2022-09-08 Singulus Technologies Aktiengesellschaft Substratträger
CN114836826B (zh) * 2022-04-15 2023-08-18 江西兆驰半导体有限公司 一种石墨基座

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN200965868Y (zh) * 2006-11-03 2007-10-24 中芯国际集成电路制造(上海)有限公司 一种夹持晶片的装置
CN102105620A (zh) * 2007-12-27 2011-06-22 Memc电子材料有限公司 具有支撑凸台的基座

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Publication number Priority date Publication date Assignee Title
US6634882B2 (en) * 2000-12-22 2003-10-21 Asm America, Inc. Susceptor pocket profile to improve process performance
JP2003124167A (ja) * 2001-10-10 2003-04-25 Sumitomo Heavy Ind Ltd ウエハ支持部材及びこれを用いる両頭研削装置
DE10323085A1 (de) 2003-05-22 2004-12-09 Aixtron Ag CVD-Beschichtungsvorrichtung
US20050016466A1 (en) 2003-07-23 2005-01-27 Applied Materials, Inc. Susceptor with raised tabs for semiconductor wafer processing
US7446284B2 (en) * 2005-12-21 2008-11-04 Momentive Performance Materials Inc. Etch resistant wafer processing apparatus and method for producing the same
JP2007251078A (ja) * 2006-03-20 2007-09-27 Nuflare Technology Inc 気相成長装置
JP5537766B2 (ja) 2007-07-04 2014-07-02 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
JP2009088088A (ja) * 2007-09-28 2009-04-23 Sharp Corp 基板処理装置および基板処理方法
DE102010000554A1 (de) 2009-03-16 2010-09-30 Aixtron Ag MOCVD-Reaktor mit einer örtlich verschieden an ein Wärmeableitorgan angekoppelten Deckenplatte
DE102009043848A1 (de) 2009-08-25 2011-03-03 Aixtron Ag CVD-Verfahren und CVD-Reaktor
US20110049779A1 (en) * 2009-08-28 2011-03-03 Applied Materials, Inc. Substrate carrier design for improved photoluminescence uniformity
DE102009043960A1 (de) 2009-09-08 2011-03-10 Aixtron Ag CVD-Reaktor
DE102009044276A1 (de) 2009-10-16 2011-05-05 Aixtron Ag CVD-Reaktor mit auf einem mehrere Zonen aufweisenden Gaspolster liegenden Substrathalter
DE102010000388A1 (de) 2010-02-11 2011-08-11 Aixtron Ag, 52134 Gaseinlassorgan mit Prallplattenanordnung
US8562746B2 (en) 2010-12-15 2013-10-22 Veeco Instruments Inc. Sectional wafer carrier
DE102011055061A1 (de) 2011-11-04 2013-05-08 Aixtron Se CVD-Reaktor bzw. Substrathalter für einen CVD-Reaktor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN200965868Y (zh) * 2006-11-03 2007-10-24 中芯国际集成电路制造(上海)有限公司 一种夹持晶片的装置
CN102105620A (zh) * 2007-12-27 2011-06-22 Memc电子材料有限公司 具有支撑凸台的基座

Also Published As

Publication number Publication date
TWI576952B (zh) 2017-04-01
CN103668124A (zh) 2014-03-26
DE102012108986A1 (de) 2014-03-27
TW201421608A (zh) 2014-06-01

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