CN103646973B - Efficient thin-film photovoltaic cell - Google Patents
Efficient thin-film photovoltaic cell Download PDFInfo
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- CN103646973B CN103646973B CN201310610570.8A CN201310610570A CN103646973B CN 103646973 B CN103646973 B CN 103646973B CN 201310610570 A CN201310610570 A CN 201310610570A CN 103646973 B CN103646973 B CN 103646973B
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- 239000010409 thin film Substances 0.000 title claims abstract description 33
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 claims abstract description 48
- 229910021338 magnesium silicide Inorganic materials 0.000 claims abstract description 43
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 9
- 210000001142 back Anatomy 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 79
- 229910052710 silicon Inorganic materials 0.000 abstract description 79
- 239000010703 silicon Substances 0.000 abstract description 79
- 239000000463 material Substances 0.000 abstract description 22
- 239000011777 magnesium Substances 0.000 abstract description 14
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 229910052749 magnesium Inorganic materials 0.000 abstract description 7
- 230000031700 light absorption Effects 0.000 abstract description 6
- 231100000252 nontoxic Toxicity 0.000 abstract description 3
- 230000003000 nontoxic effect Effects 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 210000004027 cell Anatomy 0.000 description 60
- 238000004544 sputter deposition Methods 0.000 description 26
- 239000000126 substance Substances 0.000 description 20
- 238000005516 engineering process Methods 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 14
- 238000002294 plasma sputter deposition Methods 0.000 description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 238000000151 deposition Methods 0.000 description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 11
- MKPXGEVFQSIKGE-UHFFFAOYSA-N [Mg].[Si] Chemical compound [Mg].[Si] MKPXGEVFQSIKGE-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 238000001755 magnetron sputter deposition Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 239000011787 zinc oxide Substances 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000001754 anti-pyretic effect Effects 0.000 description 4
- 239000002221 antipyretic Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 238000007750 plasma spraying Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910019752 Mg2Si Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000035800 maturation Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 208000019901 Anxiety disease Diseases 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- -1 aluminium gold Chemical compound 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000036506 anxiety Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 210000005056 cell body Anatomy 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000986 disperse dye Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 231100000701 toxic element Toxicity 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
The invention discloses an efficient thin-film photovoltaic cell and belongs to the technical field of photovoltaic cells. According to the efficient thin-film photovoltaic cell of the invention, an environmentally-friendly, low-cost and abundant magnesium silicide (Mg2Si) material is adopted to make a light absorbing layer (i) which is arranged in a traditional pn-type silicon-based photovoltaic cell, such that a photovoltaic cell with a wide (p)/narrow(i)/wide (n)-type energy band structure can be formed, and therefore, light absorption efficiency and photoelectric conversion performance can be greatly improved; the Mg2Si is a semiconductor with a face-centered cubic structure and is mainly composed of raw materials of silicon and magnesium which are non-toxic and free of pollution and are elements among the elements having highest storage quantity on the earth, and therefore, the Mg2Si is a kind of environmentally-friendly, low-cost and abundant material; as silicon, the magnesium silicide (Mg2Si) is a kind of semiconductor having an indirect-transition bandgap characteristic, while, the band gap width of the magnesium silicide (Mg2Si) is smaller than that of the silicon (0.7eV), and the light absorption coefficient of the magnesium silicide (Mg2Si) is three orders of magnitude higher than that of the silicon, and therefore, the thickness of the material can be reduced to a level under a micrometer level.
Description
Technical field
Present invention relates particularly to a kind of Efficient thin-film photovoltaic cell, belong to photovoltaic cell technical field.
Background technology
Be on the rise with ambient pressure and resource anxiety, the mankind to cleaning, efficient, inexpensive Renewable resource, especially
It is that solar energy attention rate increasingly increases.The leading device of photovoltaic market is mainly silica-based products at present.Using thickness it is typically
Hundreds of microns of substrate, forms the conversion that single pn-junction realizes photovoltaic energy, and common type has pn homojunction, pin homojunction, pn
Heterojunction structure.At pn-junction, rely on built-in field separation electronics and hole, form electric current.Light absorbs system due to crystalline silicon
Number is relatively low, and battery is difficult to accomplish less than 200 microns, material consumption and relatively costly.
In order to solve the problems referred to above of silicon-based photovoltaic cells, in global range, have developed new cell body in recent years
System.Research more widely has DSSC at present（Abbreviation DSSC）、Cu-In-Ga-Se（CIGS）、CdS/
The system of the non-silicon-based such as CdTe.Although increasing in efficiency, bring new problem.Such as, the longevity of DSSC battery
Life is often limited to stability in battery for the dyestuff, and the catalyst in DSSC often disperse dyes it is considered that DSSC
Life-span be less than 5 years；The battery of CIGS and CdS/CdTe system is due to employing rare, expensive, toxic element, relatively costly,
Environmental hazard is big, reclaims difficult.Although increasing in conversion efficiency, the popularization and application of these systems remain difficulty.
Non-crystalline silicon has the higher absorption coefficient of light, and current hull cell mainly uses this feature of non-crystalline silicon, adopts
With p-i-n structure, cell thickness can be greatly reduced to micron dimension.The feature of such battery is that open-circuit voltage is tied by pin
P-n layer built-in field in structure determines, unrelated with i layer, and i layer is that carrier produces and transfer passages.Main Types include single-unit
The various structures such as noncrystal membrane battery, amorphous-crystallite laminated cell.But due to non-crystalline silicon greater band gap（1.7eV）, absorb ripple
Duan Xiangying can be narrower than crystalline silicon（400-750 nanometer）.Simultaneously because non-crystalline silicon defect concentration is higher, especially defect after illumination
Density raises further.In addition, also useful noncrystalline silicon carbide substitutes the hull cell of non-crystalline silicon, equally face these problems.Cause
This amorphous silicon battery less efficient.
Traditional silicon substrate p-i-n hull cell is reducing material consumption, is improving the acquirement of the aspects such as efficiency of light absorption actively
Effect.How to evade the problem that band gap is wide, efficiency is low of amorphous silicon material further, be the pass improving its performance further
Key.
Content of the invention
It is an object of the invention to provide a kind of Efficient thin-film photovoltaic cell.
In order to realize object above, the technical solution adopted in the present invention is：
A kind of Efficient thin-film photovoltaic cell, including the p-i-n junction layer being made up of p layer, i layer and n-layer, described p layer, i layer,
Random layer in n-layer is magnesium silicide light absorbing zone.
Preferably, described i layer is magnesium silicide light absorbing zone；The thickness of i layer is 1000～3000nm, and carrier concentration is
1012～1017cm-3, preferably carrier concentration is 1015～1017cm-3.
Described magnesium silicide be crystalline state or the intrinsic magnesium silicide of amorphous state, its crystal habit be amorphous state, single crystal epitaxial film,
The nanometer column crystal thin film of the annealed formation of noncrystalline membrane, granular crystal thin film.
Crystalline state or amorphous silicon that described n-layer is adulterated for N-shaped；Crystalline state or amorphous silicon that p layer adulterates for p-type.Silicon
Crystal habit is amorphous state, single crystal epitaxial film, the nanometer column crystal thin film of the annealed formation of noncrystalline membrane, granular crystal are thin
Film.
Described n-layer, the thickness of p layer are respectively 0.05～0.5 micron, and carrier concentration is 1018～1021cm-3.
Preferably, a kind of Efficient thin-film photovoltaic cell, the thickness of described n-layer is 100nm, carrier concentration is 5 ×
1018cm-3；The thickness of described i layer is 2000nm, and carrier concentration is 1 × 1014cm-3；The thickness of described p layer is 50nm,
Carrier concentration is 5 × 1018cm-3.
Described Efficient thin-film photovoltaic cell also includes top electrode layer and dorsum electrode layer.
Described top electrode layer is made up of N-shaped transparent conductive oxide, and transparent conductive oxide can be at anti-reflection
The F doping SnO of reason2Or the ZnO of Al doping, or indium tin oxide.
Described dorsum electrode layer carries on the back ohmic electrode layer, can be mixed using silver metal electrodes, aluminum metal electrode or Al
Miscellaneous zinc oxide electrode.
In photovoltaic cell of the present invention, the structural order of p-i-n junction layer is convertible, such as pin, nip, ppn, pnn, npp, nnp etc.
Polytype, and the change of each thickness degree will not cause the change of battery performance.
The material system of photovoltaic cell of the present invention and preparation process have the compatibility of height with silicon solar cell, can adopt
Include Ohmic electrode, other accessories such as surface anti-reflecting layer with the preparation of silicon solar cell technology.Photovoltaic cell device two ends
Built-in field and magnesium silicide layer built-in field by the ultra-thin p in two ends, n-layer doping level determine, the work of magnesium silicide layer
With being the generation of carrier, separation, transporting, using intrinsic material, non-impurity-doped, p, the doping of n-layer depend on the silicon of maturation to produce
Technology.Energy gap width due to silicon materials, it is possible to increase maintain higher open-circuit voltage while short circuit current.
A kind of preparation method of Efficient thin-film photovoltaic cell,
Beneficial effects of the present invention：
Efficient thin-film photovoltaic cell of the present invention by environmental friendliness, low cost, rich resource magnesium silicide（Mg2Si）Material conduct
Light-absorption layer（i）It is introduced in traditional pn type silicon-based photovoltaic cells, the light that band structure is wide (p)/narrow (i)/wide (n) type can be formed
Volt battery, greatly improves efficiency of light absorption and opto-electronic conversion performance.Mg2Si is a kind of quasiconductor with face-centred cubic structure,
Its main raw material(s) is silicon and magnesium metal, and they are all one of reserves highest elements on the earth, nontoxic, pollution-free, are therefore
The environment-friendly material of inexpensive, rich resource.The quasiconductor of the magnesium silicide band gap characteristic with indirect transition the same with silicon, but
Its energy gap is less than silicon（0.7eV), the absorption coefficient of light is more than three orders of magnitude of silicon, and therefore material thickness can reduce
To below micron order.
Meanwhile, p-type silicon and n-type silicon have a wider energy gap, and magnesium silicide have lower than silicon can band gap, its absorbing light
Spectral limit even includes near infrared band.Therefore top silicon layer is fully transparent, quite for the absorption bandses of magnesium silicide
In providing a transparent window for solar spectrum, allow magnesium silicide absorbed layer can absorb sunlight well.Device two ends from
Build electric field Vbi and the built-in field of magnesium silicide layer is determined by the doping level of the ultra-thin p in two ends, n-layer（Thickness can be less than
100nm）.The effect of magnesium silicide layer is the generation of carrier, separation, transports, using intrinsic material, unmanned for doping.P, n-layer
Doping depends on the silicon production technology of maturation.The energy gap of magnesium silicide will be little than crystal silicon and non-crystalline silicon, is conducive to short circuit current
Improve.Because the energy gap width of silicon materials is so that while improving short circuit current, maintain higher open-circuit voltage.
The good effect of Efficient thin-film photovoltaic cell of the present invention is as follows：
（1）The material that this battery adopts is rich reserves, nontoxic, free of contamination silicon and magnesium elements, is environmental protection battery；
（2）Relatively with other emerging batteries, such as fuel sensitization and DSSC battery, the stability of magnesium silicide and antioxidation, height
Temperature, ageing properties are good, life-span length；
（3）Crucial light-absorption layer adopts magnesium silicide, need not deliberately adulterate, process costs are low, and its absorption coefficient of light is silicon
More than 1000 times it is possible to substantially reduce the consumption of silicon；
（4）The open-circuit voltage of battery depends on the Si layer of ultra-thin n, p layer, is not less than the top level of existing silion cell,
The absorption coefficient of light in intermediate layer is significantly larger than silicon, so the integral thickness of battery is in 50nm, can obtain thickness and be more than 250 microns
The same transformation efficiency of crystal silicon cell, has ultra-thin, efficient feature, and theoretical conversion efficiencies reach 24.7%, open-circuit voltage
0.7V fair with silion cell, fill factor, curve factor reaches 0.84；
（5）Magnesium silicide energy gap is lower than silicon, and absorption spectrum wave band near infrared region, top silicon layer to magnesium silicide is
Transparent, device is less demanding to illumination, and cloudy day or indoor environment can also generate electricity, wider than crystal silicon cell range；
（6）Processing technology is completely compatible with conventional batteries, and layers of material can adopt the manufacturing process of hull cell, magnetic control
The various method such as sputtering, plasma sputtering, chemical vapor deposition, pulsed laser deposition, ald is all applicable.
Brief description
Fig. 1 is the structural representation of Efficient thin-film photovoltaic cell in the embodiment of the present invention 1；
Fig. 2 is the band structure schematic diagram of Efficient thin-film photovoltaic cell in embodiment 1；
Fig. 3 is the band structure schematic diagram of the crystalline silicon of three kinds of different levels of doping；
Fig. 4 is the I-V curve figure that embodiment 1～3 and comparative example 1～4 prepare photovoltaic cell.
Specific embodiment
Following embodiments are only described in further detail to the present invention, but do not constitute any limitation of the invention.
Embodiment 1
Efficient thin-film photovoltaic cell structural representation in the present embodiment is as shown in figure 1, include by N-shaped transparent conductive oxide
Top electrode layer 1 and back of the body ohmic electrode layer 5 that thing is constituted, are provided with p- between top electrode layer 1 and back of the body ohmic electrode layer 5
I-n ties layer, and described p-i-n junction layer includes heavily doped n-type silicon light absorbing zone 2, magnesium silicide light absorbing zone 3 and heavily-doped p-type
Silicon light absorbing zone 4.Wherein, top electrode adopts commercially available FTO electrode；Heavily-doped p-type silicon light absorbing zone 4 adopts heavily doped polysilicon
（Doped chemical is phosphorus）, thickness be 0.05 micron, carrier concentration be 5 × 1018cm-3；Magnesium silicide light absorbing zone 3 adopts intrinsic
Magnesium silicide, thickness is 2 microns, and carrier concentration is 1014cm-3；Heavily doped n-type silicon light absorbing zone 2 adopts heavily doped polysilicon
（Doped chemical is boron）, thickness be 0.1 micron, carrier concentration be 5 × 1018cm-3；Back of the body ohmic electrode layer 5 adopts aluminium gold
Belong to electrode, constitute Ohmic contact with n-type material.The difference of above-mentioned carrier concentration contributes to setting up sufficiently large space electric field,
For separating photogenerated charge.
In the present embodiment, the preparation method of Efficient thin-film photovoltaic cell comprises the following steps：
（1）From top to bottom prepare photovoltaic cell, using magnetron sputtering technique, target is the silicon target of doped chemical B, contains
B0.02%（Atomic percentage conc）, the p-type depositing doping on top electrode obtains p layer, and sputtering power is 700W, sputtering
5 minutes, 220 DEG C of silicon；
（2）Using plasma sputtering technology, target combines target for magnesium silicon, and magnesium silicon area compares 1:1, p layer deposits
Intrinsic magnesium silicide obtains i layer, and sputtering power is 200W, sputters 30 minutes, 200 DEG C of silicon；
（3）Using magnetron sputtering technique, target is the silicon target of doped chemical P, containing P0.02%（Atomic percentage conc）,
The N-shaped polysilicon depositing doping on i layer obtains n-layer, and sputtering power is 700W, sputters 12 minutes, and matrix heats 220 DEG C；
（4）Using magnetron sputtering technique, fine aluminium does target, and sputtering power is 350W, sputters 20 minutes, prepares metal back of the body electricity
Pole.
In the present embodiment, the performance of Efficient thin-film photovoltaic cell refers to table 1 below, and I-V curve refers to Fig. 4.
The band structure schematic diagram that the present embodiment prepares Efficient thin-film photovoltaic cell refers to Fig. 2, wherein i layer same n, p layer
Potential barrier of heterogenous junction is relatively low（＜ 0.16eV）So that the electronics near heterojunction boundary and hole successfully pass through interface, so right
Carrier transport impact is less.And potential barrier of heterogenous junction can be reduced further, thus optimizing by the doping content improving silicon
The ohm contact performance of material.
Embodiment 2
Efficient thin-film photovoltaic cell in the present embodiment includes top electrode layer and the back of the body being made up of N-shaped transparent conductive oxide
Ohmic electrode layer, is provided with n-i-p knot layer between top electrode layer and back of the body ohmic electrode layer, and described n-i-p ties layer
Including heavily doped n-type silicon light absorbing zone, magnesium silicide light absorbing zone and heavily-doped p-type silicon light absorbing zone.Wherein, top electrode layer is adopted
With commercially available AZO electrode, heavily doped n-type silicon light absorbing zone adopts heavily doped polysilicon（Doped chemical phosphorus）, thickness be 0.05 micron,
Carrier concentration is 5 × 1018cm-3, magnesium silicide light absorbing zone adopt intrinsic magnesium silicide, thickness be 2000 nanometers, carrier concentration
For 1017cm-3, heavily-doped p-type silicon layer adopts heavily doped polysilicon（Doped chemical is boron）, thickness be 0.5 micron, carrier is dense
Spend for 5 × 1019cm-3；Back of the body ohmic electrode layer adopts aluminum metal electrode, constitutes Ohmic contact with n-type material.
In the present embodiment, the preparation method of Efficient thin-film photovoltaic cell comprises the following steps：
（1）From top to bottom prepare photovoltaic cell, using magnetron sputtering technique, target is the silicon target of doped chemical P, contains
P0.02%（Atomic percentage conc）, the N-shaped polysilicon depositing doping on top electrode obtains n-layer, and sputtering power is 800W, sputtering
4 minutes, matrix heated 250 DEG C；
（2）Using plasma sputtering technology, target combines target for magnesium silicon, and magnesium silicon area compares 1:1, n-layer deposits
Intrinsic magnesium silicide obtains i layer, and sputtering power is 200W, sputters 30 minutes, 200 DEG C of silicon；
（3）Using magnetron sputtering technique, target is the silicon target of doped chemical B, containing B0.02%（Atomic percentage conc）,
Depositing p-type polysilicon on i layer, sputtering power is 700W, sputters 12 minutes, 250 DEG C of silicon；
（4）Using magnetron sputtering technique, fine aluminium does target, and sputtering power is 350W, sputters 20 minutes, prepares metal back of the body electricity
Pole.
In the present embodiment, the performance of Efficient thin-film photovoltaic cell refers to table 1 below, and I-V curve refers to Fig. 4.
Embodiment 3
Efficient thin-film photovoltaic cell in the present embodiment includes top electrode layer and the back of the body being made up of N-shaped transparent conductive oxide
Ohmic electrode layer, is provided with p-i-n junction layer between top electrode layer and back of the body ohmic electrode layer, described p-i-n junction layer
Including heavily-doped p-type non-crystalline silicon light absorbing zone, magnesium silicide light absorbing zone and heavily-doped p-type non-crystalline silicon light absorbing zone.Wherein, push up
Electrode layer adopts commercially available ITO electrode；The photosensitive absorbed layer of p-type silicon adopts heavily doped amorphous silicon（Doped chemical boron）, thickness is 0.05
Micron, carrier concentration is 5 × 1020cm-3；Magnesium silicide light absorbing zone adopts intrinsic magnesium silicide, and thickness is 2 microns, and carrier is dense
Spend for 1012cm-3；N-type silicon light absorbing zone adopts heavily doped amorphous silicon（Doped chemical phosphorus）, thickness be 0.1 micron, carrier is dense
Spend for 5 × 1020cm-3；Back of the body ohmic electrode layer adopts aluminium film, constitutes Ohmic contact with n-type material.
In the present embodiment, the preparation method of Efficient thin-film photovoltaic cell comprises the following steps：
（1）From top to bottom prepare photovoltaic cell, using plasma sputtering technology, target is the silicon target of doped chemical B,
Containing B0.022%（Atomic percentage conc）, on top electrode, deposit thickness obtains p layer for the p-type non-crystalline silicon that 50nm adulterates, and sputters work(
Rate is 200W, sputters 5 minutes, substrate does not heat；
（2）Using plasma sputtering technology, target combines target for magnesium silicon, and magnesium silicon area compares 1:1, p layer deposits
Intrinsic magnesium silicide obtains i layer, and sputtering power is 200W, sputters 30 minutes；
（3）Using plasma sputtering technology, target is the silicon target of doped chemical P, containing P0.024%（Atomic percent contains
Amount）, the N-shaped non-crystalline silicon depositing doping on i layer obtains n-layer, and sputtering power is 200W, sputters 11 minutes, substrate does not heat；
（4）Using plasma sputtering technology, aluminum does target, and sputtering power is 300W, sputters 20 minutes, prepares the metal back of the body
Electrode.
In the present embodiment, the performance of Efficient thin-film photovoltaic cell refers to table 1 below, and I-V curve refers to Fig. 4.
Comparative example 1
Photovoltaic cell in this comparative example includes the top electrode layer being made up of N-shaped transparent conductive oxide and back of the body Ohmic contact
Electrode layer, is provided with p-n junction layer, respectively by Mg between top electrode layer and back of the body ohmic electrode layer2Si(n)/Mg2Si (p) structure
Become.Top electrode layer adopts commercially available ITO electrode；P-type magnesium silicide thickness is 2 microns, and carrier concentration is 5 × 1018cm-3；N-type silicon
Change magnesium thickness and be 0.05 micron, carrier concentration is 5 × 1019cm-3；Back of the body ohmic electrode layer adopts the zinc oxide of Al doping
Electrode, constitutes Ohmic contact with n-type material.
Mg2Si(n)/Mg2The preparation method of Si (p) single battery comprises the following steps：
（1）From top to bottom prepare photovoltaic cell, using plasma sputtering technology, target is the composite target material containing magnesium, silicon,
For 0.8, the atomic concentration of doped chemical aluminum is 0.01% to magnesium silicon atom ratio, deposits the intrinsic magnesium silicide of N-shaped of doping on the ito layer
Obtain n-layer, sputtering power is 160W, sputters 4 minutes, antipyretic 200 DEG C of substrate；
（2）Using plasma spraying techniques, target is the composite target material containing magnesium, silicon, and magnesium silicon area compares 0.8, doped chemical
The atomic concentration of copper is 1%, depositing p-type magnesium silicide in n-layer, and sputtering power is 200W, sputters 30 minutes, silicon 200
℃；
（3）Using plasma sputtering technology, aluminum does target, and sputtering power is 300W, sputters 10 minutes, prepares the metal back of the body
Electrode.
In this comparative example, the performance of photovoltaic cell refers to table 1 below, and I-V curve refers to Fig. 4.
Comparative example 2
Photovoltaic cell in this comparative example includes the top electrode layer being made up of N-shaped transparent conductive oxide and back of the body Ohmic contact
Electrode layer, is provided with p-n junction layer, respectively by Si (n)/Mg between top electrode layer and back of the body ohmic electrode layer2Si (p) is constituted.
Top electrode layer adopts commercially available ITO electrode；P-type magnesium silicide thickness is 2 microns, and carrier concentration is 5 × 1018cm-3；N-type silicon thickness
For 0.05 micron, carrier concentration is 5 × 1019cm-3；Back of the body ohmic electrode layer adopts the zinc oxide electrode of Al doping, with n
Section bar material constitutes Ohmic contact.
Si(n)/Mg2The preparation method of Si (p) single battery comprises the following steps：
（1）From top to bottom prepare photovoltaic cell, using plasma sputtering technology, target is the silicon target of doped chemical P,
Containing P0.02%（Atomic percentage conc）, the n-type silicon depositing doping on the ito layer obtains n-layer, and sputtering power is 150W, sputters 5 points
Clock, antipyretic 250 DEG C of substrate；
（2）Using plasma spraying techniques, target is the composite target material containing magnesium, silicon, and magnesium silicon area compares 0.8, doped chemical
The atomic concentration of copper is 1%, depositing p-type magnesium silicide in n-layer, and sputtering power is 200W, sputters 30 minutes, silicon 200
℃；
（3）Using plasma sputtering technology, aluminum does target, and sputtering power is 300W, sputters 10 minutes, prepares the metal back of the body
Electrode.
In this comparative example, the performance of photovoltaic cell refers to table 1 below, and I-V curve refers to Fig. 4.
Comparative example 3
Photovoltaic cell in this comparative example includes the top electrode layer being made up of N-shaped transparent conductive oxide and back of the body Ohmic contact
Electrode layer, is provided with p-n junction layer, respectively by Mg between top electrode layer and back of the body ohmic electrode layer2Si (n)/Si (p) is constituted.
Top electrode layer adopts indium tin oxide；P-type silicon thickness is 50 nanometers, and carrier concentration is 5 × 1019cm-3；N-shaped magnesium silicide thickness
For 2 microns, carrier concentration is 5 × 1018cm-3；Back of the body ohmic electrode layer adopts the zinc oxide electrode of Al doping, with N-shaped material
Material constitutes Ohmic contact.
Mg2The preparation method of Si (n)/Si (p) single battery comprises the following steps：
（1）From top to bottom prepare photovoltaic cell, using plasma sputtering technology, target is the silicon target of doped chemical B,
Containing B0.02%（Atomic percentage conc）, the p-type silicon depositing doping on the ito layer obtains p layer, and sputtering power is 200W, sputters 5 points
Clock, antipyretic 250 DEG C of substrate；
（2）Using plasma spraying techniques, target is the composite target material containing magnesium, silicon, and magnesium silicon area compares 0.8, doped chemical
The atomic concentration of aluminum is 0.01%, depositing n-type magnesium silicide on p layer, and sputtering power is 160W, sputters 30 minutes, silicon
200℃；
（3）Using plasma sputtering technology, aluminum does target, and sputtering power is 300W, sputters 10 minutes, prepares the metal back of the body
Electrode.
In this comparative example, the performance of photovoltaic cell refers to table 1 below, and I-V curve refers to Fig. 4.
Comparative example 4
Photovoltaic cell in this comparative example includes the top electrode layer being made up of N-shaped transparent conductive oxide and back of the body Ohmic contact
Electrode layer, is provided with p-i-n junction layer, respectively by Si (n)/Si (i)/Si (p) between top electrode layer and back of the body ohmic electrode layer
Constitute.Top electrode layer adopts indium tin oxide；P-type silicon thickness is 50 nanometers, and carrier concentration is 5 × 1019cm-3；I thickness degree
For 0.2 micron, carrier concentration is 5 × 1014cm-3；N-type silicon thickness is 0.1 micron, and carrier concentration is 5 × 1019cm-3；The back of the body
Ohmic electrode layer adopts the zinc oxide electrode of Al doping, constitutes Ohmic contact with n-type material.
In this comparative example, the preparation method of photovoltaic cell comprises the following steps：
（1）From top to bottom prepare photovoltaic cell, using magnetron sputtering technique, target is the silicon target of doped chemical B, contains
B0.02%（Atomic percentage conc）, the p-type depositing doping on the ito layer obtains p layer, and sputtering power is 700W, sputters 5 points
Clock, antipyretic 250 DEG C of substrate；
（2）Using plasma spraying techniques, target is pure silicon target, and on p layer, deposition intrinsic magnesium silicide obtains i layer, sputtering
Power is 400W, sputters 18h, 250 DEG C of silicon；
（3）Using magnetron sputtering technique, target is the silicon target of doped chemical P, containing P0.02%（Atomic percentage conc）,
The n-type silicon of doping is deposited on i layer, sputtering power is 750W, sputters 10 minutes, 250 DEG C of silicon；The preparation of metal back electrode
With step in comparative example 3（3）.
In this comparative example, the performance of photovoltaic cell refers to table 1 below, and I-V curve refers to Fig. 4.
Table 1 embodiment and comparative example prepare the performance parameter of photovoltaic cell
As it can be seen from table 1 because magnesium silicide has narrower energy gap, so Mg2The battery of Si-Si single heterostructure
Open-circuit voltage smaller.And embodiment 1～4 battery has p-i-n double-heterostructure, have benefited from the wide energy gap of silicon so that
The open-circuit voltage of double heterostructure cells significantly improves, and this structure also has higher short circuit current simultaneously, and this has just obtained very
High efficiency.
By relatively several double-heterostructure batteries it is found that under close conversion efficiency, photovoltaic electric of the present invention
The thickness in pond is far smaller than silica-based solar cell, almost poor 100 times.Comprise the photovoltaic cell of p-i-n structure in the present invention
In, by converting different types of silicon layer, and select different silicon layers to stack order, it is possible to obtain to go out different opto-electronic conversion
Efficiency, wherein highest can reach 22.25%（See embodiment 1）.
Fig. 3 is the band structure schematic diagram of the crystalline silicon of three kinds of different levels of doping, the wherein doping of p-type silicon and n-type silicon
Concentration is respectively 1 × 1016cm-3, 1 × 1018cm-3, 5 × 1019cm-3, it can be seen that with the raising of doping content,
Interface potential barrier is obviously reduced.
From fig. 4, it can be seen that the battery of single heterostructure, its open-circuit voltage and short circuit current are far smaller than all double heterogeneous
The battery of junction structure.
Claims (5)
1. a kind of Efficient thin-film photovoltaic cell, including the p-i-n junction layer being made up of p layer, i layer and n-layer it is characterised in that：Described
I layer be magnesium silicide light absorbing zone, the thickness of i layer is 1000 ~ 3000nm, and carrier concentration is 1014~1017cm-3；Described n
Layer, p layer are respectively heavy doping crystalline silicon or amorphous silicon light absorbing zone, and n-layer, the thickness of p layer are respectively 0.05 ~ 0.5 micron, carry
Flowing sub- concentration is 1018~1019cm-3.
2. Efficient thin-film photovoltaic cell according to claim 1 it is characterised in that：Described magnesium silicide is crystalline state or amorphous
The intrinsic magnesium silicide of state.
3. Efficient thin-film photovoltaic cell according to claim 1 it is characterised in that：The crystalline state that described n-layer is adulterated for N-shaped
Or amorphous silicon, thickness is 100nm, and carrier concentration is 5 × 1018cm-3；The thickness of described i layer is 2000nm, carrier
Concentration is 1 × 1014cm-3；Crystalline state or amorphous silicon that described p layer adulterates for p-type, thickness is 50nm, and carrier concentration is 5
×1018cm-3.
4. Efficient thin-film photovoltaic cell according to claim 1 it is characterised in that：Photovoltaic cell also include top electrode layer and
Dorsum electrode layer.
5. Efficient thin-film photovoltaic cell according to claim 4 it is characterised in that：Described top electrode layer is transparent by N-shaped
Conductive oxide is constituted.
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| GB2484455A (en) * | 2010-09-30 | 2012-04-18 | Univ Bolton | Photovoltaic cell comprising a silicide layer |
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| GB2484455A (en) * | 2010-09-30 | 2012-04-18 | Univ Bolton | Photovoltaic cell comprising a silicide layer |
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