CN103646973A - Efficient thin-film photovoltaic cell - Google Patents

Efficient thin-film photovoltaic cell Download PDF

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CN103646973A
CN103646973A CN201310610570.8A CN201310610570A CN103646973A CN 103646973 A CN103646973 A CN 103646973A CN 201310610570 A CN201310610570 A CN 201310610570A CN 103646973 A CN103646973 A CN 103646973A
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photovoltaic cell
silicon
film photovoltaic
magnesium silicide
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CN103646973B (en
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邵国胜
胡俊华
邓泉荣
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Zhengzhou University
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    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract

The invention discloses an efficient thin-film photovoltaic cell and belongs to the technical field of photovoltaic cells. According to the efficient thin-film photovoltaic cell of the invention, an environmentally-friendly, low-cost and abundant magnesium silicide (Mg2Si) material is adopted to make a light absorbing layer (i) which is arranged in a traditional pn-type silicon-based photovoltaic cell, such that a photovoltaic cell with a wide (p)/narrow(i)/wide (n)-type energy band structure can be formed, and therefore, light absorption efficiency and photoelectric conversion performance can be greatly improved; the Mg2Si is a semiconductor with a face-centered cubic structure and is mainly composed of raw materials of silicon and magnesium which are non-toxic and free of pollution and are elements among the elements having highest storage quantity on the earth, and therefore, the Mg2Si is a kind of environmentally-friendly, low-cost and abundant material; as silicon, the magnesium silicide (Mg2Si) is a kind of semiconductor having an indirect-transition bandgap characteristic, while, the band gap width of the magnesium silicide (Mg2Si) is smaller than that of the silicon (0.7eV), and the light absorption coefficient of the magnesium silicide (Mg2Si) is three orders of magnitude higher than that of the silicon, and therefore, the thickness of the material can be reduced to a level under a micrometer level.

Description

A kind of efficient film photovoltaic cell
Technical field
The present invention is specifically related to a kind of efficient film photovoltaic cell, belongs to photovoltaic cell technical field.
Background technology
Along with ambient pressure and resource anxiety are on the rise, the mankind to clean, efficiently, renewable resource cheaply, especially solar energy attention rate increases day by day.The leading device in photovoltaic market is mainly silica-based product at present.Normally utilizing thickness is the substrate of hundreds of microns, forms the conversion of the solid existing photovoltaic energy of single pn, and common type has pn homojunction, pin homojunction, pn heterojunction structure.At pn knot place, rely on built-in field separate electronic and hole, form electric current.Because the absorption coefficient of light of crystalline silicon is lower, battery is difficult to accomplish that, below 200 microns, material consumption and cost are higher.
In order to solve the problems referred to above of silicon-based photovoltaic cells, in global range, developed in recent years novel battery system.At present research has DSSC (being called for short DSSC), Cu-In-Ga-Se(CIGS more widely), the non-silica-based system such as CdS/CdTe.Although increase, brought new problem in efficiency.Such as, the life-span of DSSC battery is often limited to the stability of dyestuff in battery, and catalyst in DSSC tends to disperse dyes, it is generally acknowledged that the life-span of DSSC is less than 5 years; Rare owing to having adopted, expensive, the poisonous element of the battery of CIGS and CdS/CdTe system, cost is higher, and environmental hazard is large, reclaims difficulty.Although increase in conversion efficiency, applying of these systems remains difficulty.
Amorphous silicon has the higher absorption coefficient of light, and current hull cell is mainly this feature of utilizing amorphous silicon, adopts p-i-n structure, and cell thickness can significantly be reduced to micron dimension.The feature of such battery is that the p-n layer built-in field of open circuit voltage in pin structure determines, irrelevant with i layer, and i layer is that charge carrier produces and transport passage.Main Types comprises the various structures such as single-unit noncrystal membrane battery, amorphous-crystallite laminated cell.But due to amorphous silicon greater band gap (1.7eV), the corresponding meeting of absorption bands is than crystalline silicon narrow (400-750 nanometer).Because non-crystalline silicon defect concentration is higher, especially after illumination, defect concentration further raises simultaneously.In addition, also the hull cell of useful noncrystalline silicon carbide instead of amorphous silicon, faces these problems equally.Therefore the efficiency of amorphous silicon battery is lower.
The silica-based p-i-n hull cell of tradition is obtained good effect at aspects such as reducing material consumption, raising efficiency of light absorption.Wide, the inefficient problem of band gap of how further to evade amorphous silicon material is the key that further improves its performance.
Summary of the invention
The object of this invention is to provide a kind of efficient film photovoltaic cell.
In order to realize above object, the technical solution adopted in the present invention is:
An efficient film photovoltaic cell, comprises the p-i-n knot layer consisting of p layer, i layer and n layer, and the random layer in described p layer, i layer, n layer is magnesium silicide light absorbing zone.
Preferably, described i layer is magnesium silicide light absorbing zone; The thickness of i layer is 1000～3000nm, and carrier concentration is 10 12～10 17cm -3, preferably carrier concentration is 10 15～10 17cm -3.
Described magnesium silicide is crystalline state or amorphous state intrinsic magnesium silicide, and its crystal habit is amorphous state, single crystal epitaxial film, nanometer column crystal film, the granular crystal film of noncrystalline membrane through annealing and forming.
Described n layer is crystalline state or the amorphous silicon of N-shaped doping; P layer is crystalline state or the amorphous silicon of p-type doping.The crystal habit of silicon is amorphous state, single crystal epitaxial film, nanometer column crystal film, the granular crystal film of noncrystalline membrane through annealing and forming.
Described n layer, the thickness of p layer are respectively 0.05～0.5 micron, and carrier concentration is 10 18～10 21cm -3.
Preferably, a kind of efficient film photovoltaic cell, the thickness of described n layer is 100nm, carrier concentration is 5 * 10 18cm -3; The thickness of described i layer is 2000nm, and carrier concentration is 1 * 10 14cm -3; The thickness of described p layer is 50nm, and carrier concentration is 5 * 10 18cm -3.
Described efficient film photovoltaic cell also comprises top electrode layer and dorsum electrode layer.
Described top electrode layer consists of N-shaped transparent conductive oxide, and transparent conductive oxide can be the F doping SnO processing through anti-reflection 2or the ZnO of Al doping, or indium tin oxide.
Described dorsum electrode layer carries on the back Ohm contact electrode layer, can adopt the zinc oxide electrode of silver metal electrode, aluminum metal electrode or Al doping.
In photovoltaic cell of the present invention, the structural order of p-i-n knot layer is convertible, and as polytypes such as pin, nip, ppn, pnn, npp, nnp, and the variation of each layer thickness can not cause the change of battery performance.
The material system of photovoltaic cell of the present invention and preparation process and silicon solar cell have the compatibility of height, can adopt the preparation of silicon solar cell technology to comprise Ohmic electrode, other accessories such as surperficial anti-reflecting layer.The built-in field at photovoltaic cell device two ends and the built-in field of magnesium silicide layer are determined by the doping level of the ultra-thin p in two ends, n layer, the effect of magnesium silicide layer be charge carrier generation, separation, transport, adopt intrinsic material, non-impurity-doped, the doping of p, n layer depends on ripe silicon production technology.Due to the energy gap length of silicon materials, when short circuit current can be improved, maintain higher open circuit voltage.
A preparation method for efficient film photovoltaic cell,
Beneficial effect of the present invention:
Efficient film photovoltaic cell of the present invention is by the magnesium silicide (Mg of environmental friendliness, low cost, rich resource 2si) material is (i) introduced in traditional pn type silicon-based photovoltaic cells as light-absorption layer, and can form band structure is the photovoltaic cell of wide (p)/narrow (i)/wide (n) type, greatly improves efficiency of light absorption and opto-electronic conversion performance.Mg 2si is a kind of semiconductor with face-centred cubic structure, and its main raw material(s) is silicon and magnesium metal, and they are all one of elements that on the earth, reserves are the highest, nontoxic, pollution-free, is therefore environment-friendly material low-cost, rich resource.The magnesium silicide semiconductor with the band gap characteristic of indirect transition the same as silicon, but its energy gap is less than silicon (0.7eV), and the absorption coefficient of light is three of the silicon more than order of magnitude, so material thickness can be reduced to below micron order.
Meanwhile, p-type silicon and N-shaped silicon have wider energy gap, and magnesium silicide have than silicon low can band gap, its absorption spectrum ranges even comprises near infrared band.Therefore top silicon layer is completely transparent to the absorption bands of magnesium silicide, is equivalent to for solar spectrum provides a transparent window, allows magnesium silicide absorbed layer can absorb well sunlight.The built-in field of the built-in field Vbi at device two ends and magnesium silicide layer determines (bed thickness can be less than 100nm) by the doping level of the ultra-thin p in two ends, n layer.The effect of magnesium silicide layer be charge carrier generation, separation, transport, adopt intrinsic material, unmanned is doping.The doping of p, n layer depends on ripe silicon production technology.The energy gap of magnesium silicide is all less than crystal silicon and amorphous silicon, is conducive to the raising of short circuit current.Due to the energy gap length of silicon materials, make, when improving short circuit current, to maintain higher open circuit voltage.
The good effect of efficient film photovoltaic cell of the present invention is as follows:
(1) material that this battery adopts is abundant, nontoxic, the free of contamination silicon of reserves and magnesium elements, is environmental protection battery;
(2) relatively and other emerging batteries, as fuel sensitization and DSSC battery, the stability of magnesium silicide and anti-oxidant, high temperature, ageing properties are good, and the life-span is long;
(3) crucial light-absorption layer adopts magnesium silicide, and without deliberately doping, process costs is low, and its absorption coefficient of light is the more than 1000 times of silicon, so can greatly reduce the consumption of silicon;
(4) open circuit voltage of battery depends on the Si layer of ultra-thin n, p layer, can be lower than the highest level of existing silion cell, the absorption coefficient of light in intermediate layer is far away higher than silicon, so the integral thickness of battery is when 50nm, can obtain thickness and be greater than the same transformation efficiency of 250 micro-crystal silion cell, have ultra-thin, high efficiency feature, theoretical transformation efficiency reaches 24.7%, open circuit voltage and the silion cell 0.7V that maintains an equal level, fill factor, curve factor reaches 0.84;
(5) magnesium silicide energy gap is lower than silicon, and absorption spectrum wave band is near infrared region, and top silicon layer is transparent to magnesium silicide, and device is less demanding to illumination, and cloudy day or indoor environment also can be generated electricity, wider than the crystal silicon cell scope of application;
(6) manufacture craft and conventional batteries are completely compatible, and layers of material can adopt the manufacturing process of hull cell, and the whole bag of tricks such as magnetron sputtering, plasma sputtering, chemical vapour deposition (CVD), pulsed laser deposition, ald are all applicable.
Accompanying drawing explanation
Fig. 1 is the structural representation of efficient film photovoltaic cell in the embodiment of the present invention 1;
Fig. 2 is the band structure schematic diagram of efficient film photovoltaic cell in embodiment 1;
Fig. 3 is the band structure schematic diagram of the crystalline silicon of three kinds of different levels of doping;
Fig. 4 is the I-V curve chart that embodiment 1～3 and comparative example 1～4 are prepared photovoltaic cell.
Embodiment
Following embodiment is only described in further detail the present invention, but does not form any limitation of the invention.
Embodiment 1
Efficient film photovoltaic cell structure schematic diagram in the present embodiment as shown in Figure 1, comprise the top electrode layer 1 and the back of the body Ohm contact electrode layer 5 that by N-shaped transparent conductive oxide, are formed, between top electrode layer 1 and back of the body Ohm contact electrode layer 5, be provided with p-i-n knot layer, described p-i-n knot layer comprises heavy doping N-shaped silicon light absorbing zone 2, magnesium silicide light absorbing zone 3 and heavy doping p-type silicon light absorbing zone 4.Wherein, top electrode adopts commercially available FTO electrode; Heavy doping p-type silicon light absorbing zone 4 adopts heavily doped polysilicon (doped chemical is phosphorus), and thickness is 0.05 micron, and carrier concentration is 5 * 10 18cm -3; Magnesium silicide light absorbing zone 3 adopts intrinsic magnesium silicide, and thickness is 2 microns, and carrier concentration is 10 14cm -3; Heavy doping N-shaped silicon light absorbing zone 2 adopts heavily doped polysilicon (doped chemical is boron), and thickness is 0.1 micron, and carrier concentration is 5 * 10 18cm -3; Back of the body Ohm contact electrode layer 5 adopts aluminum metal electrode, forms ohmic contact with N-shaped material.The difference of above-mentioned carrier concentration contributes to set up enough large space electric field, for separating of photogenerated charge.
In the present embodiment, the preparation method of efficient film photovoltaic cell comprises the following steps:
(1) prepare photovoltaic cell from top to bottom, adopt magnetron sputtering technique, target is the silicon target material of doped chemical B, containing B0.02%(atomic percentage conc), on top electrode, the p-type polysilicon of dopant deposition obtains p layer, and sputtering power is 700W, sputter 5 minutes, 220 ℃ of substrate heating;
(2) using plasma sputtering technology, target is magnesium silicon combination target, and magnesium silicon area is than 1:1, and on p layer, deposition intrinsic magnesium silicide obtains i layer, and sputtering power is 200W, sputter 30 minutes, 200 ℃ of substrate heating;
(3) adopt magnetron sputtering technique, target is the silicon target material of doped chemical P, containing P0.02%(atomic percentage conc), on i layer, the N-shaped polysilicon of dopant deposition obtains n layer, and sputtering power is 700W, sputter 12 minutes, 220 ℃ of matrix heating;
(4) adopt magnetron sputtering technique, fine aluminium is done target, and sputtering power is 350W, and sputter 20 minutes, prepares metal back electrode.
In the present embodiment, the performance of efficient film photovoltaic cell refers to following table 1, and I-V curve refers to Fig. 4.
The band structure schematic diagram that the present embodiment is prepared efficient film photovoltaic cell refers to Fig. 2, the potential barrier of heterogenous junction of the same n of i layer, p layer lower (< 0.16eV) wherein, make near the electronics of heterojunction boundary and hole successfully through interface, so less on carrier transport impact.And can further reduce potential barrier of heterogenous junction by improving the doping content of silicon, thereby optimize the ohm contact performance of material.
Embodiment 2
Efficient film photovoltaic cell in the present embodiment comprises top electrode layer and the back of the body Ohm contact electrode layer consisting of N-shaped transparent conductive oxide, between top electrode layer and back of the body Ohm contact electrode layer, be provided with n-i-p knot layer, described n-i-p knot layer comprises heavy doping N-shaped silicon light absorbing zone, magnesium silicide light absorbing zone and heavy doping p-type silicon light absorbing zone.Wherein, top electrode layer adopts commercially available AZO electrode, and heavy doping N-shaped silicon light absorbing zone adopts heavily doped polysilicon (doped chemical phosphorus), and thickness is 0.05 micron, and carrier concentration is 5 * 10 18cm -3, magnesium silicide light absorbing zone adopts intrinsic magnesium silicide, and thickness is 2000 nanometers, and carrier concentration is 10 17cm -3, heavy doping p-type silicon layer adopts heavily doped polysilicon (doped chemical is boron), and thickness is 0.5 micron, and carrier concentration is 5 * 10 19cm -3; Back of the body Ohm contact electrode layer adopts aluminum metal electrode, forms ohmic contact with N-shaped material.
In the present embodiment, the preparation method of efficient film photovoltaic cell comprises the following steps:
(1) prepare photovoltaic cell from top to bottom, adopt magnetron sputtering technique, target is the silicon target material of doped chemical P, containing P0.02%(atomic percentage conc), on top electrode, the N-shaped polysilicon of dopant deposition obtains n layer, and sputtering power is 800W, sputter 4 minutes, 250 ℃ of matrix heating;
(2) using plasma sputtering technology, target is magnesium silicon combination target, and magnesium silicon area is than 1:1, and on n layer, deposition intrinsic magnesium silicide obtains i layer, and sputtering power is 200W, sputter 30 minutes, 200 ℃ of substrate heating;
(3) adopt magnetron sputtering technique, target is the silicon target material of doped chemical B, containing B0.02%(atomic percentage conc), on i layer, deposit p-type polysilicon, sputtering power is 700W, sputter 12 minutes, 250 ℃ of substrate heating;
(4) adopt magnetron sputtering technique, fine aluminium is done target, and sputtering power is 350W, and sputter 20 minutes, prepares metal back electrode.
In the present embodiment, the performance of efficient film photovoltaic cell refers to following table 1, and I-V curve refers to Fig. 4.
Embodiment 3
Efficient film photovoltaic cell in the present embodiment comprises top electrode layer and the back of the body Ohm contact electrode layer consisting of N-shaped transparent conductive oxide, between top electrode layer and back of the body Ohm contact electrode layer, be provided with p-i-n knot layer, described p-i-n knot layer comprises heavy doping p-type amorphous silicon light absorbing zone, magnesium silicide light absorbing zone and heavy doping p-type amorphous silicon light absorbing zone.Wherein, top electrode layer adopts commercially available ITO electrode; The photosensitive absorbed layer of p-type silicon adopts heavily doped amorphous silicon (doped chemical boron), and thickness is 0.05 micron, and carrier concentration is 5 * 10 20cm -3; Magnesium silicide light absorbing zone adopts intrinsic magnesium silicide, and thickness is 2 microns, and carrier concentration is 10 12cm -3; N-shaped silicon light absorbing zone adopts heavily doped amorphous silicon (doped chemical phosphorus), and thickness is 0.1 micron, and carrier concentration is 5 * 10 20cm -3; Back of the body Ohm contact electrode layer adopts aluminium film, forms ohmic contact with N-shaped material.
In the present embodiment, the preparation method of efficient film photovoltaic cell comprises the following steps:
(1) prepare photovoltaic cell from top to bottom, using plasma sputtering technology, target is the silicon target material of doped chemical B, containing B0.022%(atomic percentage conc), on top electrode, deposit thickness is that the p-type amorphous silicon that 50nm adulterates obtains p layer, sputtering power is 200W, sputter 5 minutes, and substrate does not heat;
(2) using plasma sputtering technology, target is magnesium silicon combination target, and magnesium silicon area is than 1:1, and on p layer, deposition intrinsic magnesium silicide obtains i layer, and sputtering power is 200W, sputter 30 minutes;
(3) using plasma sputtering technology, target is the silicon target material of doped chemical P, containing P0.024%(atomic percentage conc), on i layer, the N-shaped amorphous silicon of dopant deposition obtains n layer, and sputtering power is 200W, sputter 11 minutes, substrate does not heat;
(4) using plasma sputtering technology, aluminium is done target, and sputtering power is 300W, and sputter 20 minutes, prepares metal back electrode.
In the present embodiment, the performance of efficient film photovoltaic cell refers to following table 1, and I-V curve refers to Fig. 4.
Comparative example 1
Photovoltaic cell in this comparative example comprises top electrode layer and the back of the body Ohm contact electrode layer consisting of N-shaped transparent conductive oxide, is provided with p-n junction layer, respectively by Mg between top electrode layer and back of the body Ohm contact electrode layer 2si (n)/Mg 2si (p) forms.Top electrode layer adopts commercially available ITO electrode; P-type magnesium silicide thickness is 2 microns, and carrier concentration is 5 * 10 18cm -3; N-shaped magnesium silicide thickness is 0.05 micron, and carrier concentration is 5 * 10 19cm -3; Back of the body Ohm contact electrode layer adopts the zinc oxide electrode of Al doping, forms ohmic contact with N-shaped material.
Mg 2si (n)/Mg 2the preparation method of Si (p) single battery comprises the following steps:
(1) prepare photovoltaic cell from top to bottom, using plasma sputtering technology, target is the composite target material containing magnesium, silicon, magnesium silicon atom ratio is 0.8, the atomic concentration of doped chemical aluminium is 0.01%, and on ITO layer, the N-shaped intrinsic magnesium silicide of dopant deposition obtains n layer, and sputtering power is 160W, sputter 4 minutes, antipyretic 200 ℃ of substrate;
(2) adopt plasma sputtering technology, target is the composite target material containing magnesium, silicon, and magnesium silicon area is than 0.8, and the atomic concentration of doped chemical copper is 1%, deposits p-type magnesium silicide on n layer, and sputtering power is 200W, sputter 30 minutes, 200 ℃ of substrate heating;
(3) using plasma sputtering technology, aluminium is done target, and sputtering power is 300W, and sputter 10 minutes, prepares metal back electrode.
In this comparative example, the performance of photovoltaic cell refers to following table 1, and I-V curve refers to Fig. 4.
Comparative example 2
Photovoltaic cell in this comparative example comprises top electrode layer and the back of the body Ohm contact electrode layer consisting of N-shaped transparent conductive oxide, is provided with p-n junction layer, respectively by Si (n)/Mg between top electrode layer and back of the body Ohm contact electrode layer 2si (p) forms.Top electrode layer adopts commercially available ITO electrode; P-type magnesium silicide thickness is 2 microns, and carrier concentration is 5 * 10 18cm -3; N-shaped silicon thickness is 0.05 micron, and carrier concentration is 5 * 10 19cm -3; Back of the body Ohm contact electrode layer adopts the zinc oxide electrode of Al doping, forms ohmic contact with N-shaped material.
Si (n)/Mg 2the preparation method of Si (p) single battery comprises the following steps:
(1) prepare photovoltaic cell from top to bottom, using plasma sputtering technology, target is the silicon target material of doped chemical P, containing P0.02%(atomic percentage conc), on ITO layer, the N-shaped silicon of dopant deposition obtains n layer, and sputtering power is 150W, sputter 5 minutes, antipyretic 250 ℃ of substrate;
(2) adopt plasma sputtering technology, target is the composite target material containing magnesium, silicon, and magnesium silicon area is than 0.8, and the atomic concentration of doped chemical copper is 1%, deposits p-type magnesium silicide on n layer, and sputtering power is 200W, sputter 30 minutes, 200 ℃ of substrate heating;
(3) using plasma sputtering technology, aluminium is done target, and sputtering power is 300W, and sputter 10 minutes, prepares metal back electrode.
In this comparative example, the performance of photovoltaic cell refers to following table 1, and I-V curve refers to Fig. 4.
Comparative example 3
Photovoltaic cell in this comparative example comprises top electrode layer and the back of the body Ohm contact electrode layer consisting of N-shaped transparent conductive oxide, is provided with p-n junction layer, respectively by Mg between top electrode layer and back of the body Ohm contact electrode layer 2si (n)/Si (p) forms.Top electrode layer adopts indium tin oxide; P-type silicon thickness is 50 nanometers, and carrier concentration is 5 * 10 19cm -3; N-shaped magnesium silicide thickness is 2 microns, and carrier concentration is 5 * 10 18cm -3; Back of the body Ohm contact electrode layer adopts the zinc oxide electrode of Al doping, forms ohmic contact with N-shaped material.
Mg 2the preparation method of Si (n)/Si (p) single battery comprises the following steps:
(1) prepare photovoltaic cell from top to bottom, using plasma sputtering technology, target is the silicon target material of doped chemical B, containing B0.02%(atomic percentage conc), on ITO layer, the p-type silicon of dopant deposition obtains p layer, and sputtering power is 200W, sputter 5 minutes, antipyretic 250 ℃ of substrate;
(2) adopt plasma sputtering technology, target is the composite target material containing magnesium, silicon, and magnesium silicon area is than 0.8, and the atomic concentration of doped chemical aluminium is 0.01%, deposits N-shaped magnesium silicide on p layer, and sputtering power is 160W, sputter 30 minutes, 200 ℃ of substrate heating;
(3) using plasma sputtering technology, aluminium is done target, and sputtering power is 300W, and sputter 10 minutes, prepares metal back electrode.
In this comparative example, the performance of photovoltaic cell refers to following table 1, and I-V curve refers to Fig. 4.
Comparative example 4
Photovoltaic cell in this comparative example comprises top electrode layer and the back of the body Ohm contact electrode layer consisting of N-shaped transparent conductive oxide, between top electrode layer and back of the body Ohm contact electrode layer, be provided with p-i-n knot layer, by Si (n)/Si (i)/Si (p), formed respectively.Top electrode layer adopts indium tin oxide; P-type silicon thickness is 50 nanometers, and carrier concentration is 5 * 10 19cm -3; I layer thickness is 0.2 micron, and carrier concentration is 5 * 10 14cm -3; N-shaped silicon thickness is 0.1 micron, and carrier concentration is 5 * 10 19cm -3; Back of the body Ohm contact electrode layer adopts the zinc oxide electrode of Al doping, forms ohmic contact with N-shaped material.
In this comparative example, the preparation method of photovoltaic cell comprises the following steps:
(1) prepare photovoltaic cell from top to bottom, adopt magnetron sputtering technique, target is the silicon target material of doped chemical B, containing B0.02%(atomic percentage conc), on ITO layer, the p-type polysilicon of dopant deposition obtains p layer, and sputtering power is 700W, sputter 5 minutes, antipyretic 250 ℃ of substrate;
(2) adopt plasma sputtering technology, target is pure silicon target, and on p layer, deposition intrinsic magnesium silicide obtains i layer, and sputtering power is 400W, sputter 18h, 250 ℃ of substrate heating;
(3) adopt magnetron sputtering technique, target is the silicon target material of doped chemical P, containing P0.02%(atomic percentage conc), the N-shaped silicon of dopant deposition on i layer, sputtering power is 750W, sputter 10 minutes, 250 ℃ of substrate heating; The preparation of metal back electrode is with step (3) in comparative example 3.
In this comparative example, the performance of photovoltaic cell refers to following table 1, and I-V curve refers to Fig. 4.
Table 1 embodiment and comparative example are prepared the performance parameter of photovoltaic cell
Figure BDA0000422972050000081
As can be seen from Table 1, because magnesium silicide has narrower energy gap, so Mg 2the open circuit voltage of the battery of Si-Si single heterojunction structure is smaller.And embodiment 1～4 battery has p-i-n double-heterostructure, have benefited from the wide energy gap of silicon, the open circuit voltage of double heterojunction battery is improved significantly, this structure also has higher short circuit current simultaneously, and this has just obtained very high efficiency.
By more several double-heterostructure batteries, can find, under close conversion efficiency, the thickness of photovoltaic cell of the present invention is far smaller than silica-based solar cell, almost poor 100 times.In the photovoltaic cell that comprises p-i-n structure in the present invention, by converting dissimilar silicon layer, and select different silicon layers to stack order, can obtain out different photoelectric conversion efficiencys, wherein the highest 22.25%(that can reach is shown in embodiment 1).
Fig. 3 is the band structure schematic diagram of the crystalline silicon of three kinds of different levels of doping, and wherein the doping content of p-type silicon and N-shaped silicon is respectively 1 * 10 16cm -3, 1 * 10 18cm -3, 5 * 10 19cm -3, as can be seen from the figure, along with the raising of doping content, interface potential barrier obviously reduces.
As can be seen from Figure 4, the battery of single heterojunction structure, its open circuit voltage and short circuit current are all far smaller than the battery of double-heterostructure.

Claims (10)

1. an efficient film photovoltaic cell, comprises the p-i-n knot layer consisting of p layer, i layer and n layer, it is characterized in that: the random layer in described p layer, i layer, n layer is magnesium silicide light absorbing zone.
2. efficient film photovoltaic cell according to claim 1, is characterized in that: described i layer is magnesium silicide light absorbing zone.
3. efficient film photovoltaic cell according to claim 1 and 2, is characterized in that: described magnesium silicide is crystalline state or amorphous state intrinsic magnesium silicide.
4. efficient film photovoltaic cell according to claim 3, is characterized in that: described n layer, p layer are respectively heavy doping crystalline silicon or amorphous silicon light absorbing zone.
5. efficient film photovoltaic cell according to claim 3, is characterized in that: the carrier concentration of described i layer is 10 15～10 17cm -3.
6. efficient film photovoltaic cell according to claim 3, is characterized in that: the thickness of described i layer is 1000～3000nm, and the carrier concentration of described i layer is 10 12～10 17cm -3.
7. efficient film photovoltaic cell according to claim 3, is characterized in that: described n layer, the thickness of p layer are respectively 0.05～0.5 micron, and carrier concentration is respectively 10 18～10 21cm -3.
8. efficient film photovoltaic cell according to claim 3, is characterized in that: described n layer is crystalline state or the amorphous silicon of N-shaped doping, and thickness is 100nm, and carrier concentration is 5 * 10 18cm -3; The thickness of described i layer is 2000nm, and carrier concentration is 1 * 10 14cm -3; Described p layer is crystalline state or the amorphous silicon of p-type doping, and thickness is 50nm, and carrier concentration is 5 * 10 18cm -3.
9. efficient film photovoltaic cell according to claim 1, is characterized in that: photovoltaic cell also comprises top electrode layer and dorsum electrode layer.
10. efficient film photovoltaic cell according to claim 9, is characterized in that: described top electrode layer consists of N-shaped transparent conductive oxide.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101719521A (en) * 2009-12-01 2010-06-02 湖北大学 Solar cell of sandwich structure consisting of Si/FeSi2/Si and manufacturing method thereof
GB2484455A (en) * 2010-09-30 2012-04-18 Univ Bolton Photovoltaic cell comprising a silicide layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101719521A (en) * 2009-12-01 2010-06-02 湖北大学 Solar cell of sandwich structure consisting of Si/FeSi2/Si and manufacturing method thereof
GB2484455A (en) * 2010-09-30 2012-04-18 Univ Bolton Photovoltaic cell comprising a silicide layer

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