CN103633005B - 大面积异形晶片匀胶均匀性控制装置 - Google Patents

大面积异形晶片匀胶均匀性控制装置 Download PDF

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CN103633005B
CN103633005B CN201310576932.6A CN201310576932A CN103633005B CN 103633005 B CN103633005 B CN 103633005B CN 201310576932 A CN201310576932 A CN 201310576932A CN 103633005 B CN103633005 B CN 103633005B
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黄歆
张雅
陈明和
杨思川
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Beijing Zhongke Feihong Technology Co.,Ltd.
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ZHONGKE FEIHONG SCIENCE AND TECHNOLOGY Co Ltd BEIJING
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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Abstract

本发明公开了一种大面积异形晶片匀胶均匀性控制装置，包括承片平台，承片平台上表面的中心位置设置一个贯通承载平台的定位槽，定位槽长度方向的两端分别设有定位台阶，定位槽内部设置一个真空槽，真空槽的底部设有抽真空孔，定位槽宽度方向的两侧设置分别设有弧形挡板，弧形挡板的弧形圆心指向承片平台的中心方向。能有效防止异形基片端面匀胶不均匀，显著提高半导体芯片的性能及生产效率，还具有成本低、易于实现的特点。

Description

大面积异形晶片匀胶均匀性控制装置
技术领域
本发明涉及一种半导体加工设备的基片承载装置，尤其涉及一种大面积异形晶片匀胶均匀性控制装置。
背景技术
随着半导体技术的迅速发展，常用的圆形基片已无法满足生产需要，各种长方形、方形等异形基片开始层出不穷，而常规的旋转涂覆式匀胶容易导致异形基片端面匀胶不均，限制了生产合格率的提高。
发明内容
本发明的目的是提供一种能解决大面积异形基片匀胶不均匀问题的大面积异形晶片匀胶均匀性控制装置。
本发明的目的是通过以下技术方案实现的：
本发明的大面积异形晶片匀胶均匀性控制装置，包括承片平台，所述承片平台上表面的中心位置设置一个贯通所述承载平台的定位槽，所述定位槽长度方向的两端分别设有定位台阶，所述定位槽内部设置一个真空槽，所述真空槽的底部设有抽真空孔，所述定位槽宽度方向的两侧设置分别设有弧形挡板，所述弧形挡板的弧形圆心指向所述承片平台的中心方向。
由上述本发明提供的技术方案可以看出，本发明实施例提供的大面积异形晶片匀胶均匀性控制装置，由于承片平台上表面的中心位置设置一个贯通所述承载平台的定位槽，定位槽长度方向的两端分别设有定位台阶，定位槽内部设置一个真空槽，真空槽的底部设有抽真空孔，定位槽宽度方向的两侧设置分别设有弧形挡板，弧形挡板的弧形圆心指向承片平台的中心方向。解决了半导体芯片制作中大面积异形基片匀胶不均匀的问题，能有效防止异形基片端面匀胶不均匀，显著提高半导体芯片的性能及生产效率，本发明还具有成本低、易于实现的特点。
附图说明
图1为本发明实施例提供的大面积异形晶片匀胶均匀性控制装置的结构示意图。
具体实施方式
下面将对本发明实施例作进一步地详细描述。
本发明的大面积异形晶片匀胶均匀性控制装置，其较佳的具体实施方式是：
包括承片平台，所述承片平台上表面的中心位置设置一个贯通所述承载平台的定位槽，所述定位槽长度方向的两端分别设有定位台阶，所述定位槽内部设置一个真空槽，所述真空槽的底部设有抽真空孔，所述定位槽宽度方向的两侧设置分别设有弧形挡板，所述弧形挡板的弧形圆心指向所述承片平台的中心方向。
所述定位槽的宽度尺寸与基片一致，所述定位台阶的长度小于所述基片的宽度，所述定位台阶的高度与所述基片相同，两个所述定位台阶的内间距与所述基片的长度相同。
所述定位台阶的长度小于所述基片的宽度4mm。
所述真空槽的形状与基片相似，所述真空槽的平面尺寸小于所述基片的尺寸。
所述真空槽的深度为0.5mm。
所述弧形挡板的长度与基片的长度一致，所述弧形挡板的高度方向的弧长为1.5厘米。
本发明的大面积异形晶片匀胶均匀性控制装置，在承片平台上表面的中心位置设置一个定位槽，且在定位槽长度方向设置两个定位台阶，用于基片定位；所述定位槽内部设置一个真空槽，用于更好地抽真空吸附基片；在定位槽宽度方向的两侧设置两个弧形挡板，且弧形挡板的圆心指向承片平台的中心方向，用于控制基片周边气流，提高匀胶均匀性。解决了半导体芯片制作中大面积异形基片匀胶不均匀的问题，能有效防止异形基片端面匀胶不均匀，显著提高半导体芯片的性能及生产效率，本发明还具有成本低、易于实现的特点。
具体实施例：
如图1所示，包括承片平台1，在承片平台1上表面的中心位置设置定位槽4，尺寸与基片一致，且在定位槽长度方向设置两个定位台阶5，用于基片定位；所述定位槽4内部设置真空槽2，形状与基片相似，尺寸小于基片，深度为0.5mm，用于更好地抽真空吸附基片；在定位槽4宽度方向的两侧设置两个弧形挡板3，其长度与基片长度一致，弧长为1.5厘米，且弧形挡板的圆心指向承片平台的中心方向，用于控制基片周边气流，有效防止异形基片端面匀胶不均的问题，从而提高匀胶的均匀性。
以上所述，仅为本发明较佳的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明披露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应该以权利要求书的保护范围为准。

Claims (2)

1.一种大面积异形晶片匀胶均匀性控制装置，其特征在于，包括承片平台，所述承片平台上表面的中心位置设置一个贯通所述承片平台的定位槽，所述定位槽长度方向的两端分别设有定位台阶，所述定位槽内部设置一个真空槽，所述真空槽的底部设有抽真空孔，所述定位槽宽度方向的两侧设置分别设有弧形挡板，所述弧形挡板的弧形圆心指向所述承片平台的中心方向；
所述定位槽的宽度尺寸与基片一致，所述定位台阶的长度小于所述基片的宽度，所述定位台阶的高度与所述基片相同，两个所述定位台阶的内间距与所述基片的长度相同；
所述定位台阶的长度小于所述基片的宽度4mm；
所述真空槽的深度为0.5mm；
所述弧形挡板的长度与基片的长度一致，所述弧形挡板的高度方向的弧长为1.5厘米。
2.根据权利要求1所述的大面积异形晶片匀胶均匀性控制装置，其特征在于，所述真空槽的形状与基片相似，所述真空槽的平面尺寸小于所述基片的尺寸。
CN201310576932.6A 2013-11-18 2013-11-18 大面积异形晶片匀胶均匀性控制装置 Active CN103633005B (zh)

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CN105470175A (zh) * 2015-12-31 2016-04-06 无锡赛晶太阳能有限公司 一种太阳能电池片清洗设备
CN108766868B (zh) * 2018-05-29 2020-10-27 江苏爱矽半导体科技有限公司 一种半导体硅晶圆匀胶装置
CN111562718B (zh) * 2020-06-04 2023-10-27 青岛天仁微纳科技有限责任公司 用于基片补偿定位的定位装置

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CN1717728A (zh) * 2003-08-22 2006-01-04 株式会社Lg化学 旋涂装置以及使用此旋涂装置制造的涂层基板
CN2914146Y (zh) * 2006-06-15 2007-06-20 深圳飞通光电子技术有限公司 一种铌酸锂晶片光刻甩胶真空吸头
CN201374317Y (zh) * 2009-03-20 2009-12-30 昆山西钛微电子科技有限公司 晶圆级芯片封装用环氧树脂薄膜涂覆台

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JPH0430417A (ja) * 1990-05-28 1992-02-03 Hitachi Ltd 半導体ウエハ保持回転装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1717728A (zh) * 2003-08-22 2006-01-04 株式会社Lg化学 旋涂装置以及使用此旋涂装置制造的涂层基板
CN2914146Y (zh) * 2006-06-15 2007-06-20 深圳飞通光电子技术有限公司 一种铌酸锂晶片光刻甩胶真空吸头
CN201374317Y (zh) * 2009-03-20 2009-12-30 昆山西钛微电子科技有限公司 晶圆级芯片封装用环氧树脂薄膜涂覆台

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