CN103608917B - 超薄功率晶体管和具有定制占位面积的同步降压变换器 - Google Patents

超薄功率晶体管和具有定制占位面积的同步降压变换器 Download PDF

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CN103608917B
CN103608917B CN201280028281.0A CN201280028281A CN103608917B CN 103608917 B CN103608917 B CN 103608917B CN 201280028281 A CN201280028281 A CN 201280028281A CN 103608917 B CN103608917 B CN 103608917B
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thickness
contact pad
chip
strip
flat plate
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CN103608917A (zh
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J·A·赫尔嵩末
O·J·洛佩斯
J·A·浓趣勒
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Texas Instruments Inc
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Texas Instruments Inc
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Dc-Dc Converters (AREA)
CN201280028281.0A 2011-04-07 2012-04-09 超薄功率晶体管和具有定制占位面积的同步降压变换器 Active CN103608917B (zh)

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US9184121B2 (en) * 2014-02-05 2015-11-10 Texas Instruments Incorporated Stacked synchronous buck converter having chip embedded in outside recess of leadframe
US9508625B2 (en) * 2014-04-01 2016-11-29 Infineon Technologies Ag Semiconductor die package with multiple mounting configurations
US20150371930A1 (en) * 2014-06-18 2015-12-24 Texas Instruments Incorporated Integrated Circuit Packaging Method Using Pre-Applied Attachment Medium
US9721860B2 (en) 2014-11-06 2017-08-01 Texas Instruments Incorporated Silicon package for embedded semiconductor chip and power converter
JP6191785B2 (ja) * 2014-11-20 2017-09-06 日本精工株式会社 電子部品搭載用放熱基板
CN104465423B (zh) * 2014-12-08 2017-08-22 杰群电子科技（东莞）有限公司 一种双引线框架叠合设计半导体器件封装方法
US10032884B2 (en) 2015-10-22 2018-07-24 International Business Machines Corporation Unmerged epitaxial process for FinFET devices with aggressive fin pitch scaling
CN106024745A (zh) * 2016-07-01 2016-10-12 长电科技（宿迁）有限公司 一种半导体管脚贴装结构及其焊接方法
CN109473414B (zh) * 2017-09-08 2022-11-11 万国半导体(开曼)股份有限公司 模制智能功率模块及其制造方法
JP7116303B2 (ja) * 2018-06-25 2022-08-10 日亜化学工業株式会社 パッケージ及び発光装置
DE102018214228A1 (de) * 2018-08-23 2020-02-27 Brose Fahrzeugteile Gmbh & Co. Kommanditgesellschaft, Bamberg Elektronik eines Elektromotors eines Kraftfahrzeugs
US11145578B2 (en) 2019-09-24 2021-10-12 Infineon Technologies Ag Semiconductor package with top or bottom side cooling and method for manufacturing the semiconductor package
US11742267B2 (en) 2020-10-12 2023-08-29 Toyota Motor Engineering And Manufacturing North America, Inc. Power electronics assembly having flipped chip transistors
DE112021005639T5 (de) * 2020-12-23 2023-08-03 Rohm Co., Ltd. Verfahren zur herstellung eines halbleiterbauteils und halbleiterbauteils

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EP2724368B1 (en) 2016-11-16
JP6053752B2 (ja) 2016-12-27
US9779967B2 (en) 2017-10-03
WO2013106050A3 (en) 2013-10-03
US9165865B2 (en) 2015-10-20
US20120256239A1 (en) 2012-10-11
CN103608917A (zh) 2014-02-26
US20160005627A1 (en) 2016-01-07

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