CN103606610B - A kind of electrode structure of light-emitting diode - Google Patents
A kind of electrode structure of light-emitting diode Download PDFInfo
- Publication number
- CN103606610B CN103606610B CN201310496325.9A CN201310496325A CN103606610B CN 103606610 B CN103606610 B CN 103606610B CN 201310496325 A CN201310496325 A CN 201310496325A CN 103606610 B CN103606610 B CN 103606610B
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- China
- Prior art keywords
- metal electrode
- electrode
- light
- emitting diode
- bonding
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 81
- 239000002184 metal Substances 0.000 claims abstract description 81
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of electrode structure of light-emitting diode, this electrode structure comprises bottom flat electrode, this bottom flat electrode has: the first metal electrode, the second metal electrode and the 3rd metal electrode, wherein the second metal electrode is between the first metal electrode and the 3rd metal electrode.
Description
Technical field
The invention belongs to LED technology field, particularly a kind of electrode structure of light-emitting diode.
Background technology
Light-emitting diode is the light-emitting component made by semi-conducting material, element has two electrode terminals, between terminal, apply voltage, passes into minimum electric current, dump energy can excite and disengage by combination via electronics electricity hole in the form of light, and this is the basic principle of luminosity of light-emitting diode.
The conventional structure of light-emitting diode chip for backlight unit comprises the semiconductor light emitting structure that produces light radiation after powered up and the electrode that this semiconductor structure is connected with extraneous power supply.What light-emitting diode chip for backlight unit designed focuses on improving the light radiation efficiency of semiconductor structure and improving the quality of connection of semiconductor structure and extraneous power supply.
Chinese patent open source literature CN102214625A discloses a kind of electrode structure of light-emitting diode, this structure is passed through the surface roughening of electrode, thus the adhesive force of bonding gold wire and electrode is strengthened when routing, improve the quality of connection of light-emitting diode chip for backlight unit and extraneous power supply today.Although this electrode structure can increase the quality of connection of electrode to a certain extent, but because electrode is plane electrode, therefore after routing, the connection of bonding gold wire and electrode is still confined to the planar range of electrode, therefore the adhesion of its bonding gold wire and electrode still cannot significantly improve, there is the possibility of off-line, thus affect the quality of light-emitting diode.
And require that strict especially occasion, particularly Electrodes require occasion little especially at some to electrode electrical connection quality, the resistivity after bonding gold wire and electrode bonding is also one of factor that must consider.
Summary of the invention
The present invention is directed to the problem of prior art, propose a kind of electrode structure, this electrode structure can not only significantly intensifier electrode and bonding gold wire adhesion, and can obtain less resistivity.
First to of the present invention " on ", D score defines, in the present invention, by referring to accompanying drawing, of the present invention " on " in accompanying drawing towards direction vertically upward during accompanying drawing.D score of the present invention is that " highly " as herein described refers to towards the distance in vertical direction during accompanying drawing towards direction vertically downward during accompanying drawing in accompanying drawing.
The present invention proposes a kind of electrode structure of light-emitting diode, this electrode structure comprises bottom flat electrode, this bottom flat electrode has: the first metal electrode, the second metal electrode and the 3rd metal electrode, wherein the bottom surface of the first metal electrode is square, described second metal electrode is formed around the first metal electrode, and its bottom surface is also square, and described 3rd metal electrode is formed around the second metal electrode, and its bottom surface is also square.
Wherein, the first metal electrode is identical with the height of the 3rd metal electrode, and the height of the second metal electrode is less than the first metal electrode and the 3rd metal electrode; The difference in height of the second metal electrode and the first metal electrode is between 1/3 to 1/2 of the diameter of the bonding gold wire as electrode bonding.
Wherein, the material of described first metal electrode and the 3rd metal electrode is copper or aluminium, is preferably aluminium; The material of described second metal electrode is gold.
Accompanying drawing explanation
The schematic diagram of the light-emitting diode electrode structure that Fig. 1-3 proposes for the present invention.
Embodiment
The electrode structure of the light-emitting diode that the present invention proposes is introduced see Fig. 1-3.
See the sectional view that Fig. 1 and 2, Fig. 1 are light-emitting diode electrode structure, bottom flat electrode 1, the bottom surface of described bottom flat electrode 1 is square; This bottom flat electrode 1 has: the first metal electrode 2, second metal electrode 3 and the 3rd metal electrode 4, wherein the bottom surface of the first metal electrode 2 is square, described second metal electrode 3 is formed around the first metal electrode 2, and its bottom surface is also square, described 3rd metal electrode 4 is formed around the second metal electrode 3, and its bottom surface is also square.
Wherein, the first metal electrode 2 is identical with the height of the 3rd metal electrode 4, and the height of the second metal electrode 3 is less than the first metal electrode 2 and the 3rd metal electrode 4; The difference in height of the second metal electrode 3 and the first metal electrode 2 is between 1/3 to 1/2 of the diameter of the bonding gold wire as electrode bonding.
Wherein, the material of described first metal electrode 2 and the 3rd metal electrode 4 is copper or aluminium, is preferably aluminium; The material of described second metal electrode 2 is gold.
See Fig. 1 and 3, carrying out in the process of bonding to light-emitting diodes pipe electrode, bonding gold wire 5 is placed in the top of light-emitting diodes pipe electrode, is pressed onto on light-emitting diodes pipe electrode by bonding gold wire 5 by bonding briquetting 6.Because the first metal electrode 2 is identical with the height of the 3rd metal electrode 4, and the second metal electrode 3 and the first metal electrode 2, the height of the 3rd metal electrode 4 is different, namely there is high low head, therefore, at bonding gold wire 5 by the process of downbond, bonding gold wire 5 is except being bonded to the surface of the first metal electrode 2 and the 3rd metal electrode 4, also be bonded to by the first metal electrode 2, among the depression that second metal electrode 3 and the 3rd metal electrode 4 are formed jointly, therefore bonding area relatively flat shape electrode structure is larger, thus its adhesion is larger.The more important thing is, the material adopted due to the second metal electrode 3 is identical with the material that bonding gold wire 5 just adopts, and be all gold, thus the combination of bonding gold wire 5 and the second metal electrode 3 is stronger.Meanwhile, because the second metal electrode 3 adopts gold to form, therefore with bonding gold wire 5 bonding after, the resistivity between them is less, goes for para-linkage resistivity and requires higher occasion.
With reference to Fig. 3, in the present invention, the difference in height of the second metal electrode 3 and the first metal electrode 2 is between 1/3 to 1/2 of the diameter of the bonding gold wire 5 as electrode bonding.The object of such setting is when bonding, bonding gold wire 5 can fill up the first metal electrode 2, second metal electrode 3 and the common sunk area formed of the 3rd metal electrode 4, and be unlikely to again the fracture causing bonding gold wire 5, thus ensure that bonding gold wire can the bonding of firmly continuous print and light-emitting diodes pipe electrode.
It should be noted that, the electrode structure that figures only show light-emitting diode of the present invention, and the structure of light-emitting diode itself is not shown, those skilled in the art should know, and the light emitting diode construction of this area routine can be applied to the present invention.
So far to invention has been detailed description, but the embodiment of description above only just the preferred embodiments of the present invention, it is not intended to limit the present invention.Those skilled in the art, under the prerequisite not departing from spirit of the present invention, can make any amendment, and protection scope of the present invention are limited to the appended claims to the present invention.
Claims (2)
1. an electrode structure for light-emitting diode, is characterized in that:
This electrode structure comprises bottom flat electrode, and this bottom flat electrode has: the first metal electrode, the second metal electrode and the 3rd metal electrode, and wherein the second metal electrode is between the first metal electrode and the 3rd metal electrode;
Wherein the bottom surface of the first metal electrode is square, and described second metal electrode is formed around the first metal electrode, and its bottom surface is also square, and described 3rd metal electrode is formed around the second metal electrode, and its bottom surface is also square;
Wherein, the first metal electrode is identical with the height of the 3rd metal electrode, and the height of the second metal electrode is less than the first metal electrode and the 3rd metal electrode; The difference in height of the second metal electrode and the first metal electrode is between 1/3 to 1/2 of the diameter of the bonding gold wire as electrode bonding.
2. electrode structure as claimed in claim 1, is characterized in that:
Wherein, the material of described first metal electrode and the 3rd metal electrode is copper or aluminium; The material of described second metal electrode is gold.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310496325.9A CN103606610B (en) | 2013-10-21 | 2013-10-21 | A kind of electrode structure of light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310496325.9A CN103606610B (en) | 2013-10-21 | 2013-10-21 | A kind of electrode structure of light-emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103606610A CN103606610A (en) | 2014-02-26 |
| CN103606610B true CN103606610B (en) | 2016-04-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310496325.9A Active CN103606610B (en) | 2013-10-21 | 2013-10-21 | A kind of electrode structure of light-emitting diode |
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| CN (1) | CN103606610B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016174047A (en) * | 2015-03-16 | 2016-09-29 | 株式会社東芝 | Semiconductor light emitting element |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201667343U (en) * | 2010-04-23 | 2010-12-08 | 山东华光光电子有限公司 | Coarsing structure of a GaN base LED tube core transparent conductive thin film |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060131534A (en) * | 2005-06-16 | 2006-12-20 | 삼성전기주식회사 | Semiconductor emitting device with approved and manufacturing method for the same |
| KR101154744B1 (en) * | 2005-08-01 | 2012-06-08 | 엘지이노텍 주식회사 | Nitride light emitting device and fabrication method thereof |
| JP2008072039A (en) * | 2006-09-15 | 2008-03-27 | Matsushita Electric Ind Co Ltd | Light-emitting element |
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- 2013-10-21 CN CN201310496325.9A patent/CN103606610B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201667343U (en) * | 2010-04-23 | 2010-12-08 | 山东华光光电子有限公司 | Coarsing structure of a GaN base LED tube core transparent conductive thin film |
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| Publication number | Publication date |
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| CN103606610A (en) | 2014-02-26 |
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Effective date of registration: 20170725 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG DONGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |
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