CN103594586B - A kind of manufacture method of the electrode structure with coarse surface - Google Patents
A kind of manufacture method of the electrode structure with coarse surface Download PDFInfo
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- CN103594586B CN103594586B CN201310496745.7A CN201310496745A CN103594586B CN 103594586 B CN103594586 B CN 103594586B CN 201310496745 A CN201310496745 A CN 201310496745A CN 103594586 B CN103594586 B CN 103594586B
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 123
- 239000002184 metal Substances 0.000 claims abstract description 123
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 31
- 239000007769 metal material Substances 0.000 claims abstract description 22
- 239000010931 gold Substances 0.000 claims abstract description 13
- 229910052737 gold Inorganic materials 0.000 claims abstract description 13
- 230000008020 evaporation Effects 0.000 claims abstract description 10
- 238000001704 evaporation Methods 0.000 claims abstract description 10
- 238000007788 roughening Methods 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 238000000637 aluminium metallisation Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 239000000463 material Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses the manufacture method of a kind of electrode structure with coarse surface, it is characterized in that, described method in turn includes the following steps: (1) forms bottom flat electrode, (2) evaporation metal material layer on bottom flat electrode, is patterned to form the first metal electrode and the 3rd metal electrode to this metal material layer；(3) upper surface of the first metal electrode and the 3rd metal electrode is carried out roughening treatment, form roughened layer；(4) between the first metal electrode and the 3rd metal electrode gold evaporation to form the second metal electrode.
Description
Technical field
The invention belongs to the technical field of light-emitting diodes pipe electrode, particularly to the manufacture method of the electrode structure of a kind of light emitting diode with coarse surface.
Background technology
Light emitting diode is the light-emitting component made by semi-conducting material, element has two electrode terminals, applies voltage, pass into minimum electric current between terminal, dump energy can being excited in the form of light via the combination in electronics electricity hole and disengage, this is the basic principle of luminosity of light emitting diode.
The conventional structure of light-emitting diode chip for backlight unit includes a semiconductor light emitting structure producing light radiation after powered up and the electrode that this semiconductor structure is connected with extraneous power supply.The quality of connection focusing on improving the light radiation efficiency of semiconductor structure and raising semiconductor structure with extraneous power supply of light-emitting diode chip for backlight unit design.
Chinese patent open source literature CN102214625A discloses the electrode structure of a kind of light emitting diode, this structure is by by the surface roughening of electrode, thus strengthen the adhesive force of bonding gold wire and electrode when routing, improve the quality of connection of light-emitting diode chip for backlight unit and extraneous power supply today.Although this electrode structure can increase the quality of connection of electrode to a certain extent, but owing to electrode is plane electrode, therefore after routing, the connection of bonding gold wire and electrode is still limited to the planar range of electrode, therefore its bonding gold wire still cannot be greatly improved with the adhesion of electrode, there is the possibility of off-line, thus affecting the quality of light emitting diode.
And, at some, electrode electrical connection quality is required that particularly severe occasion, particularly Electrodes require occasion little especially, bonding gold wire be bonded with electrode after resistivity be also one of the factor that must take into.
Summary of the invention
The present invention is directed to problem of the prior art, it is proposed that the manufacture method of a kind of electrode structure with coarse surface, the method can not only be greatly enhanced electrode and bonding gold wire adhesion, and is obtained in that less resistivity.
First to of the present invention " on ", D score be defined, in the present invention, by referring to accompanying drawing, of the present invention " on " for vertically upward direction time in accompanying drawing towards accompanying drawing.D score of the present invention be in accompanying drawing towards accompanying drawing time direction vertically downward, the distance that " highly " as herein described refers to during towards accompanying drawing in vertical direction.
The present invention proposes the manufacture method of a kind of electrode structure with coarse surface, in turn includes the following steps:
(1) bottom flat electrode is formed,
(2) evaporation metal material layer on bottom flat electrode, is patterned to form the first metal electrode and the 3rd metal electrode to this metal material layer；
(3) upper surface of the first metal electrode and the 3rd metal electrode is carried out roughening treatment, form roughened layer；
(4) between the first metal electrode and the 3rd metal electrode gold evaporation to form the second metal electrode；
This bottom flat electrode has: the first metal electrode, the second metal electrode and the 3rd metal electrode, wherein the bottom surface of the first metal electrode is square, described second metal electrode is formed around the first metal electrode, and its bottom surface is also square, described 3rd metal electrode is formed around the second metal electrode, and its bottom surface is also square.
Wherein, the upper surface of the first metal electrode and the 3rd metal electrode forms roughened layer, and the upper surface of the second metal electrode is formed without roughened layer；
Wherein, the height of the first metal electrode and the 3rd metal electrode is identical, and the height of the second metal electrode is less than the first metal electrode and the 3rd metal electrode；The difference in height of the upper surface of the roughened layer on the upper surface of the second metal electrode and the first metal electrode is between the 1/4 to 1/3 of the diameter of the bonding gold wire being bonded as electrode.
Wherein, the material of described first metal electrode and the 3rd metal electrode is copper or aluminum, it is preferred to aluminum；The material of described second metal electrode is gold.
Accompanying drawing explanation
The schematic diagram of the manufacture method of the electrode structure with coarse surface that Fig. 1-4 proposes for the present invention.
Detailed description of the invention
The manufacture method of the electrode structure with coarse surface that the present invention proposes is introduced referring to Fig. 1-4.
The manufacture method of described electrode structure, in turn includes the following steps:
(1) bottom flat electrode 1 is formed,
(2) evaporation metal material layer on bottom flat electrode 1, is patterned to form the first metal electrode 2 and the 3rd metal electrode 4 to this metal material layer；
(3) upper surface of the first metal electrode 2 and the 3rd metal electrode 4 is carried out roughening treatment, form roughened layer 6；
(4) between the first metal electrode 2 and the 3rd metal electrode 4 gold evaporation to form the second metal electrode 3；
Wherein, in step (1), by adopting the method for AM aluminum metallization or copper to form bottom flat electrode 1；
Wherein, in step (2), evaporation metal material layer on flat electrode 1, this metal material layer can be copper metal or aluminum metal；Then metal material layer is patterned, photoetching, etching technics specifically can be adopted to be removed completely by unwanted metal material layer, to form two openings in metal material layer, metal material layer between two openings is as the first metal electrode 2, and the metal material layer between two openings is not as the 3rd metal electrode 4；
Wherein, in step (3); in roughening treatment to the first metal electrode 2 and the upper surface of the 3rd metal electrode 3; initially with photoresist, the region between the first metal electrode 2 and the 3rd metal electrode 3 is carried out covering protection; and only expose the upper surface of the first metal electrode 2 and the 3rd metal electrode 3, then again it is carried out roughening treatment.
As it is shown in figure 1, in the electrode structure formed, the bottom surface of described bottom flat electrode 1 is square；This bottom flat electrode 1 is formed the first metal electrode the 2, second metal electrode 3 and the 3rd metal electrode 4, wherein the bottom surface of the first metal electrode 2 is square, described second metal electrode 3 is formed around the first metal electrode 2, and its bottom surface is also square, described 3rd metal electrode 4 is formed around the second metal electrode 3, and its bottom surface is also square.
Wherein, the material of described first metal electrode 2 and the 3rd metal electrode 4 is copper or aluminum, it is preferred to aluminum；The material of described second metal electrode 2 is gold.The upper surface of the first metal electrode 2 and the 3rd metal electrode 4 has roughened layer 6, and the upper surface of the second metal electrode 3 is flat surfaces, and namely it does not have roughened layer；It is copper or aluminum that the purpose so arranged is because the material of the first metal electrode 2 and the 3rd metal electrode 4, therefore can form roughened layer 6 easily by techniques such as sandblasting, plasma etching, chemical attacks；And the upper surface of the second metal electrode 3 is formed without roughened layer, the material being because the second metal electrode 3 is gold, if to form roughened layer on the surface of gold, whether through sandblasting, the technique such as plasma etching or chemical attack, the loss of gold is caused in capital, although this loss is negligible for an electrode, but in actual production, manufacture a large amount of light emitting diode to be just necessarily required to form substantial amounts of electrode structure, because metal is in expensive metal, thus gold will seem considerable when being lost in extensive manufacture, therefore the upper surface of the second metal electrode 3 formed by gold is not carried out alligatoring by the present invention, it is prompted by economy motives just.
For the alligatoring degree of roughened layer 6, in theory, various alligatoring degree can increase the bonded area of bonding gold wire and electrode structure to a certain extent, thus the bond strength that also just can increase between them, but in the present invention, the alligatoring degree of roughened layer 6 is preferably controlled between 5 microns to 100 microns, it is more preferred to control between 20 microns to 60 microns.
Wherein, the first metal electrode 2 is identical with the height of the 3rd metal electrode 4, and the height of the second metal electrode 3 is less than the first metal electrode 2 and the 3rd metal electrode 4；The difference in height of the upper surface of the roughened layer 6 on the upper surface of the second metal electrode 3 and the first metal electrode 2 is between the 1/4 to 1/3 of the diameter of the bonding gold wire being bonded as electrode.The purpose so arranged is when bonding, the sunk area that bonding gold wire 5 can fill up first metal electrode the 2, second metal electrode 3 and the 3rd metal electrode 4 collectively forms, and be unlikely to again to cause the fracture of bonding gold wire 5, thus ensure that bonding gold wire can firm being bonded of continuous print and light-emitting diodes pipe electrode.
Fig. 4 is the structural representation after being bonded on electrode by bonding gold wire 5；As seen from the figure, bonding gold wire 5 is bonded on light-emitting diodes pipe electrode.Owing to the first metal electrode 2 is identical with the height of the 3rd metal electrode 4, and the second metal electrode 3 is different from the height of the first metal electrode the 2, the 3rd metal electrode 4, namely there is high low head, therefore, at bonding gold wire 5 except being bonded to the surface of the first metal electrode 2 and the 3rd metal electrode 4, also it is bonded among the depression collectively formed by first metal electrode the 2, second metal electrode 3 and the 3rd metal electrode 4, therefore bonding area relatively flat shape electrode structure is bigger, thus its adhesion is bigger.The more important thing is, the material adopted due to the second metal electrode 3 is identical with the material that bonding gold wire 5 just adopts, and is all gold, thus bonding gold wire 5 and the second metal electrode 3 in conjunction with higher.Meanwhile, owing to the second metal electrode 3 adopts gold to constitute, after being therefore bonded with bonding gold wire 5, the resistivity between them is less, it is possible to require higher occasion suitable in para-linkage resistivity.
It should be noted that the accompanying drawing of the present invention illustrate only the electrode structure of light emitting diode, and the structure illustrating light emitting diode itself, those skilled in the art should know, and the light emitting diode construction of this area routine can be applied to the present invention.
So far the present invention being described in detail, but the embodiment of description above is only merely the preferred embodiments of the present invention, it is not intended to limit the present invention.The present invention without departing from the spirit of the invention, can made any amendment, and protection scope of the present invention is being limited to the appended claims by those skilled in the art.
Claims (1)
1. the manufacture method of an electrode structure with coarse surface, it is characterised in that described method in turn includes the following steps:
(1) bottom flat electrode is formed,
(2) evaporation metal material layer on bottom flat electrode, is patterned to form the first metal electrode and the 3rd metal electrode to this metal material layer；
(3) upper surface of the first metal electrode and the 3rd metal electrode is carried out roughening treatment, form roughened layer；
(4) between the first metal electrode and the 3rd metal electrode gold evaporation to form the second metal electrode；
Wherein, in step (1), by adopting the method for AM aluminum metallization or copper to form bottom flat electrode；
Wherein, in step (2), evaporation metal material layer on flat electrode, this metal material layer is copper metal or aluminum metal；Then metal material layer is patterned, photoetching, etching technics is specifically adopted to be removed completely by unwanted metal material layer, to form two openings in metal material layer, metal material layer between two openings is as the first metal electrode, and the metal material layer between two openings is not as the 3rd metal electrode；
In step (3); in roughening treatment to the first metal electrode and the upper surface of the 3rd metal electrode; initially with photoresist, the region between the first metal electrode and the 3rd metal electrode is carried out covering protection; and only expose the first metal electrode and the upper surface of the 3rd metal electrode, then again it is carried out roughening treatment；
Wherein, the bottom surface of bottom flat electrode is square；The bottom surface of the first metal electrode is square, and described second metal electrode is formed around the first metal electrode, and its bottom surface is also square, and described 3rd metal electrode is formed around the second metal electrode, and its bottom surface is also square；
Wherein, the height of the first metal electrode and the 3rd metal electrode is identical, and the height of the second metal electrode is less than the first metal electrode and the 3rd metal electrode；The difference in height of the upper surface of the roughened layer on the upper surface of the second metal electrode and the first metal electrode is between the 1/4 to 1/3 of the diameter of the bonding gold wire being bonded as electrode；
The alligatoring degree of roughened layer controls between 5 microns to 100 microns.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310496745.7A CN103594586B (en) | 2013-10-21 | 2013-10-21 | A kind of manufacture method of the electrode structure with coarse surface |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310496745.7A CN103594586B (en) | 2013-10-21 | 2013-10-21 | A kind of manufacture method of the electrode structure with coarse surface |
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| Publication Number | Publication Date |
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| CN103594586A CN103594586A (en) | 2014-02-19 |
| CN103594586B true CN103594586B (en) | 2016-06-29 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102479904A (en) * | 2010-11-26 | 2012-05-30 | 株式会社东芝 | Semiconductor light emitting device and method for manufacturing the same |
| CN202633370U (en) * | 2012-07-03 | 2012-12-26 | 杭州士兰明芯科技有限公司 | Conveniently routed light-emitting diode (LED) chip |
| CN103140947A (en) * | 2010-09-30 | 2013-06-05 | 同和电子科技有限公司 | Iii nitride semiconductor light-emitting element, and process for manufacturing same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6943377B2 (en) * | 2002-11-21 | 2005-09-13 | Sensor Electronic Technology, Inc. | Light emitting heterostructure |
| JP5479391B2 (en) * | 2011-03-08 | 2014-04-23 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
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- 2013-10-21 CN CN201310496745.7A patent/CN103594586B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103140947A (en) * | 2010-09-30 | 2013-06-05 | 同和电子科技有限公司 | Iii nitride semiconductor light-emitting element, and process for manufacturing same |
| CN102479904A (en) * | 2010-11-26 | 2012-05-30 | 株式会社东芝 | Semiconductor light emitting device and method for manufacturing the same |
| CN202633370U (en) * | 2012-07-03 | 2012-12-26 | 杭州士兰明芯科技有限公司 | Conveniently routed light-emitting diode (LED) chip |
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| CN103594586A (en) | 2014-02-19 |
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Effective date of registration: 20170724 Address after: Licheng Town East Street Liyang city 213300 Jiangsu city of Changzhou province No. 182 Patentee after: Liyang Technology Development Center Address before: Li Town of Liyang City, Jiangsu province 213300 Changzhou City Dongmen Street No. 67 Patentee before: LIYANG DONGDA TECHNOLOGY TRANSFER CENTER CO., LTD. |
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