CN103606583A - Upconversion amorphous silicon solar cell with one-dimensional photonic crystal and manufacturing process thereof - Google Patents
Upconversion amorphous silicon solar cell with one-dimensional photonic crystal and manufacturing process thereof Download PDFInfo
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- CN103606583A CN103606583A CN201310641793.0A CN201310641793A CN103606583A CN 103606583 A CN103606583 A CN 103606583A CN 201310641793 A CN201310641793 A CN 201310641793A CN 103606583 A CN103606583 A CN 103606583A
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- solar cell
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- upconverter
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 50
- 238000004519 manufacturing process Methods 0.000 title abstract description 13
- 239000004038 photonic crystal Substances 0.000 title abstract 6
- 238000006243 chemical reaction Methods 0.000 claims abstract description 38
- 238000003475 lamination Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims description 47
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 19
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 19
- 238000005516 engineering process Methods 0.000 claims description 18
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 15
- 229910000077 silane Inorganic materials 0.000 claims description 15
- -1 rare earth ion Chemical class 0.000 claims description 14
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 238000005984 hydrogenation reaction Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 claims description 3
- 229910000085 borane Inorganic materials 0.000 claims description 3
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 150000004820 halides Chemical class 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 claims description 3
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 3
- 230000003252 repetitive effect Effects 0.000 claims description 3
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 abstract 9
- 210000005056 cell body Anatomy 0.000 abstract 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an upconversion amorphous silicon solar cell with a one-dimensional photonic crystal. The upconversion amorphous silicon solar cell structurally comprises an amorphous silicon solar cell body, EVA, an upconverter, EVA and a one-dimensional photonic crystal reflector from top to bottom in sequence, and a manufacturing process of the upconversion amorphous silicon solar cell comprises the steps of manufacturing the amorphous silicon solar cell body, manufacturing the upconverter, manufacturing the one-dimensional photonic crystal reflector and carrying out overlapping and lamination. Near-infrared photons used by the amorphous silicon solar cell can be increased, the short-circuit current of the solar cell is improved, and then the conversion efficiency of the solar cell is improved. The one-dimensional photonic crystal reflector can enhance the reflection effect and reduce the transmission loss of the photons, and is beneficial for improving the conversion efficiency of the cell. Meanwhile, the one-dimensional photonic crystal reflector replaces a metal reflector, material cost can be lowered, the upconversion amorphous silicon solar cell can be manufactured through the production equipment of the amorphous silicon solar cell, and equipment cost does not need to be increased.
Description
Technical field
The present invention relates to a kind of solar cell, particularly structure and the preparation method of the novel solar cell of a kind of while combination and upper switch technology and 1-D photon crystal total reflection technology.
Background technology
Current solar energy generation technology has obtained application and development to a certain degree, but not extensive universal, one of them important reason is the high cost of solar cell, for reducing the cost of solar cell, will reduce on the one hand the manufacturing cost of solar cell.To improve the conversion efficiency of solar cell on the other hand.
Amorphous silicon solar cell belongs to hull cell, and its thickness only has 0.2 to 0.4 micron.The thickness of crystal silicon solar battery is 200 microns of left and right, and the former can save material cost greatly.Yet the former conversion efficiency is high less than the latter, limited its application and development.
Summary of the invention
Goal of the invention: the object of the invention is in order to solve deficiency of the prior art, a kind of conversion efficiency is high, save material upper conversion amorphous silicon solar cell and the manufacturing process thereof with 1-D photon crystal are provided.
Technical scheme: a kind of upper conversion amorphous silicon solar cell with 1-D photon crystal of the present invention, its structure is followed successively by amorphous silicon solar cell, ethylene-vinyl acetate copolymer EVA, upconverter, ethylene-vinyl acetate copolymer EVA, 1-D photon crystal speculum from top to bottom.
As preferably, described amorphous silicon solar cell comprises glass substrate, transparency conductive electrode (TCO), Window layer p layer, intrinsic layer i layer and n layer.
As preferably, described upconverter is to be made by rare earth ion doped materials that contains Powdered or glassy state such as halide, oxide or sulfide.
The invention also discloses a kind of manufacturing process with the upper conversion amorphous silicon solar cell of 1-D photon crystal:
(1) prepare amorphous silicon solar cell:
1) adopt common process, utilize magnetically controlled DC sputtering technology to prepare the front electrode of aluminum-doped zinc oxide transparent conduction;
2) utilize PECVD p layer, i layer, the n layer of deposited amorphous silicon solar cell successively, source of the gas used is silane and phosphine, silane and hydrogen, silane and borine;
3) utilize magnetically controlled DC sputtering technology to prepare aluminum-doped zinc oxide transparent conduction rear electrode;
(2) prepare upconverter:
1) adopt the synthetic up-conversion of hydro thermal method, upper conversion by matrix and and be entrained in wherein trivalent rare earth ions and form, the luminescence center that rare earth ion is material;
2) gained up-conversion is mixed and is colloidal with curing materials dimethyl silicone polymer, use sol evenning machine to adopt the mode of spin coating to prepare filmated upconverter;
(3) prepare 1-D photon crystal speculum:
1) adopt the silicon nitride film of PECVD deposition techniques one deck high index of refraction, source of the gas used is ammonia, silane;
2) adopt the hydrogenation non crystal silicon film of PECVD deposition techniques one deck low-refraction, source of the gas used is silane and hydrogen;
3) repetitive process 1) and process 2), 1-D photon crystal formed;
(4) lamination:
1) according to the area of battery, cut out the EVA of suitable size;
2) in order according to successively 1-D photon crystal speculum, EVA, upconverter, EVA, amorphous silicon solar cell being carried out to lamination from top to bottom;
(5) lamination: put into laminating machine after lamination and will carry out lamination, amorphous silicon solar cell, upconverter, 1-D photon crystal speculum are packaged together and form the upper conversion solar cell with 1-D photon crystal speculum.
As preferably, before described step conduction, electrode square resistance is 10 Ω, and thickness is 450-500nm;
As preferably, the refractive index of described silicon nitride film is 1.3-2.1, and thickness is 35-45nm.
As preferably, the refractive index of described hydrogenation non crystal silicon film is 3.2-4.2, and thickness is 70-80nm.
Beneficial effect: a kind of upper conversion amorphous silicon solar cell with 1-D photon crystal of the present invention, the total reflection technology of upper switch technology and photon crystal reflecting mirror is combined and is applied to amorphous silicon solar cell, the application of upconverter can increase the utilization of amorphous silicon solar cell to near-infrared photon, improve the short circuit current of solar cell, and then improve the conversion efficiency of solar cell.1-D photon crystal back reflector can strengthen reflecting effect, reduces the transmission loss of photon, is conducive to improve the conversion efficiency of battery.1-D photon crystal substituted metal speculum, can reduce material cost simultaneously, can utilize the production equipment of amorphous silicon solar cell to be prepared, without increasing equipment cost.
Accompanying drawing explanation
Fig. 1 is the structural representation that the present invention has the upper conversion amorphous silicon solar cell of 1-D photon crystal.
Fig. 2 is the reflectogram spectrogram of speculum of the present invention.
Embodiment
A kind of upper conversion amorphous silicon solar cell with 1-D photon crystal as depicted in figs. 1 and 2, its structure is followed successively by amorphous silicon solar cell 1, ethylene-vinyl acetate copolymer EVA2, upconverter 3, ethylene-vinyl acetate copolymer EVA2,1-D photon crystal speculum 4 from top to bottom, wherein amorphous silicon solar cell 1 comprises glass substrate, transparency conductive electrode (TCO), Window layer p layer, intrinsic layer i layer and n layer, and upconverter is to be made by rare earth ion doped materials that contains Powdered or glassy state such as halide, oxide or sulfide.
The invention also discloses a kind of manufacturing process with the upper conversion amorphous silicon solar cell of 1-D photon crystal:
(1) prepare amorphous silicon solar cell:
1) adopt common process, utilize magnetically controlled DC sputtering technology to prepare the front electrode of aluminum-doped zinc oxide transparent conduction, electrode square resistance is 10 Ω, and thickness is 450-500nm;
3) utilize PECVD p layer, i layer, the n layer of deposited amorphous silicon solar cell successively, source of the gas used is silane and phosphine, silane and hydrogen, silane and borine;
3) utilize magnetically controlled DC sputtering technology to prepare aluminum-doped zinc oxide transparent conduction rear electrode;
(2) prepare upconverter:
1) adopt the synthetic up-conversion of hydro thermal method, upper conversion by matrix and and be entrained in wherein trivalent rare earth ions and form, rare earth ion is the luminescence center of material, and its effect is the conversion realizing photon energy, absorbs an out high-energy photon of two or above low－enerugy photon radiation.Generally select rare earth Er
3+as doping ion.The effect of matrix is for rare earth ion provides crystalline field, and it can be chloride, oxide or sulfide that matrix is divided according to its chemical composition, and the chlorides that adopt because of having less phonon energy more at present;
2) gained up-conversion is mixed and is colloidal with curing materials dimethyl silicone polymer, use sol evenning machine to adopt the mode of spin coating to prepare filmated upconverter;
(3) prepare 1-D photon crystal speculum:
1) adopt the silicon nitride film of PECVD deposition techniques one deck high index of refraction, refractive index is 1.3-2.1, and thickness is 35-45nm, and source of the gas used is ammonia, silane;
3) adopt the hydrogenation non crystal silicon film of PECVD deposition techniques one deck low-refraction, refractive index is 3.2-4.2, and thickness is 70-80nm, and source of the gas used is silane and hydrogen;
3) repetitive process 1) and process 2), 1-D photon crystal formed;
(4) lamination:
1) according to the area of battery, cut out the EVA of suitable size;
2) in order according to successively 1-D photon crystal speculum, EVA, upconverter, EVA, amorphous silicon solar cell being carried out to lamination from top to bottom;
(5) lamination: put into laminating machine after lamination and will carry out lamination, amorphous silicon solar cell, upconverter, 1-D photon crystal speculum are packaged together and form the upper conversion solar cell with 1-D photon crystal speculum.
A kind of upper conversion amorphous silicon solar cell with 1-D photon crystal of the present invention, the total reflection technology of upper switch technology and photon crystal reflecting mirror is combined and is applied to amorphous silicon solar cell, the application of upconverter can increase the utilization of amorphous silicon solar cell to near-infrared photon, improve the short circuit current of solar cell, and then improve the conversion efficiency of solar cell.1-D photon crystal back reflector can strengthen reflecting effect, reduces the transmission loss of photon, is conducive to improve the conversion efficiency of battery.1-D photon crystal substituted metal speculum, can reduce material cost simultaneously, can utilize the production equipment of amorphous silicon solar cell to be prepared, without increasing equipment cost.
Claims (7)
1. a upper conversion amorphous silicon solar cell with 1-D photon crystal, is characterized in that: its structure is followed successively by amorphous silicon solar cell (1), ethylene-vinyl acetate copolymer EVA(2 from top to bottom), upconverter (3), ethylene-vinyl acetate copolymer EVA(2), 1-D photon crystal speculum (4).
2. a kind of upper conversion amorphous silicon solar cell with 1-D photon crystal according to claim 1, is characterized in that: described amorphous silicon solar cell (1) comprises glass substrate, transparency conductive electrode (TCO), Window layer p layer, intrinsic layer i layer and n layer.
3. a kind of upper conversion amorphous silicon solar cell with 1-D photon crystal according to claim 1, is characterized in that: described upconverter is to be made by rare earth ion doped materials that contains Powdered or glassy state such as halide, oxide or sulfide.
4. the preparation technology of a upper conversion amorphous silicon solar cell with 1-D photon crystal is as follows:
(1) prepare amorphous silicon solar cell:
1) adopt common process, utilize magnetically controlled DC sputtering technology to prepare the front electrode of aluminum-doped zinc oxide transparent conduction;
Utilize PECVD p layer, i layer, the n layer of deposited amorphous silicon solar cell successively, source of the gas used is silane and phosphine, silane and hydrogen, silane and borine;
3) utilize magnetically controlled DC sputtering technology to prepare aluminum-doped zinc oxide transparent conduction rear electrode;
(2) prepare upconverter:
1) adopt the synthetic up-conversion of hydro thermal method, upper conversion by matrix and and be entrained in wherein trivalent rare earth ions and form, the luminescence center that rare earth ion is material;
2) gained up-conversion is mixed and is colloidal with curing materials dimethyl silicone polymer, use sol evenning machine to adopt the mode of spin coating to prepare filmated upconverter;
(3) prepare 1-D photon crystal speculum:
1) adopt the silicon nitride film of PECVD deposition techniques one deck high index of refraction, source of the gas used is ammonia, silane;
The hydrogenation non crystal silicon film that adopts PECVD deposition techniques one deck low-refraction, source of the gas used is silane and hydrogen;
3) repetitive process 1) and process 2), 1-D photon crystal formed;
(4) lamination:
1) according to the area of battery, cut out the EVA of suitable size;
2) in order according to successively 1-D photon crystal speculum, EVA, upconverter, EVA, amorphous silicon solar cell being carried out to lamination from top to bottom;
(5) lamination: put into laminating machine after lamination and will carry out lamination, amorphous silicon solar cell, upconverter, 1-D photon crystal speculum are packaged together and form the upper conversion solar cell with 1-D photon crystal speculum.
5. a kind of preparation technology with the upper conversion amorphous silicon solar cell of 1-D photon crystal according to claim 4, is characterized in that: before described step conduction, electrode square resistance is 10 Ω, and thickness is 450-500nm.
6. a kind of preparation technology with the upper conversion amorphous silicon solar cell of 1-D photon crystal according to claim 4, is characterized in that: the refractive index of described silicon nitride film is 1.3-2.1, and thickness is 35-45nm.
7. a kind of preparation technology with the upper conversion amorphous silicon solar cell of 1-D photon crystal according to claim 4, is characterized in that: the refractive index of described hydrogenation non crystal silicon film is 3.2-4.2, and thickness is 70-80nm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119538A (en) * | 2018-07-27 | 2019-01-01 | 暨南大学 | The translucent no indium polymer solar battery of flexible 1-D photon crystal regulation |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003347571A (en) * | 2001-09-28 | 2003-12-05 | Sanyo Electric Co Ltd | Photovoltaic element and photovoltaic device |
| CN101369609A (en) * | 2008-10-10 | 2009-02-18 | 南开大学 | Solar battery with upper conversion material and preparation method |
| US20120266942A1 (en) * | 2011-04-25 | 2012-10-25 | Hitachi Chemical Company, Ltd. | Seal sheet and solar cell module |
| CN103296145A (en) * | 2013-05-09 | 2013-09-11 | 南开大学 | Photonic crystal back reflector provided with adjustable forbidden band and applied to silicon-based thin-film solar cell |
-
2013
- 2013-12-05 CN CN201310641793.0A patent/CN103606583A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003347571A (en) * | 2001-09-28 | 2003-12-05 | Sanyo Electric Co Ltd | Photovoltaic element and photovoltaic device |
| CN101369609A (en) * | 2008-10-10 | 2009-02-18 | 南开大学 | Solar battery with upper conversion material and preparation method |
| US20120266942A1 (en) * | 2011-04-25 | 2012-10-25 | Hitachi Chemical Company, Ltd. | Seal sheet and solar cell module |
| CN103296145A (en) * | 2013-05-09 | 2013-09-11 | 南开大学 | Photonic crystal back reflector provided with adjustable forbidden band and applied to silicon-based thin-film solar cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119538A (en) * | 2018-07-27 | 2019-01-01 | 暨南大学 | The translucent no indium polymer solar battery of flexible 1-D photon crystal regulation |
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Application publication date: 20140226 |