CN103594599B - A kind of SMD LED device of high reliability high brightness - Google Patents

A kind of SMD LED device of high reliability high brightness Download PDF

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Publication number
CN103594599B
CN103594599B CN201210286695.5A CN201210286695A CN103594599B CN 103594599 B CN103594599 B CN 103594599B CN 201210286695 A CN201210286695 A CN 201210286695A CN 103594599 B CN103594599 B CN 103594599B
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China
Prior art keywords
silica gel
wire
groove
cavity
led device
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Application number
CN201210286695.5A
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Chinese (zh)
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CN103594599A (en
Inventor
程志坚
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Jiangxi Hongli photoelectric Co., Ltd.
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SHENZHEN SMALITE OPTOELECTRONICS CO Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H01L2224/48248—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item the bond pad being disposed in a recess of the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

A kind of SMD LED device of high reliability high brightness, it relates to light emitting diode field, on pedestal (2), be provided with cavity (4), chip (5) is arranged on cavity (4) inside, put in and on the one end in cavity (4), be provided with groove (9) at positive electrode plate (3-1) and negative electrode plate (3-2), with wire (7) by the bonding wire region welding of the electrode (5-1) on chip (5) and groove (9) bottom, in groove (9), fill transparent soft silica gel (8), by the connecting portion parcel between wire (7) and groove (9), in cavity (4), be provided with hard silica gel (6), it adopts soft silica gel to wrap up the pad of wire and metal electrode board, effectively prevent wire from departing from metal electrode board and the phenomenon of dead lamp between the emergence period, and utilize the refractive index of hard silica gel, make the luminous efficiency of device high, make the brightness of LED device high.

Description

A kind of SMD LED device of high reliability high brightness
Technical field
The present invention relates to a kind of SMD LED device, be specifically related to a kind of SMD LED device of high reliability high brightness.
Background technology
SMD LED device is a kind of novel surface mounted type light emitting semiconductor device, there is the advantages such as volume is little, angle of scattering is large, uniformity of luminance is good, the high and low power consumption of reliability, fast response time, it has been widely used in picture and text demonstration, outdoor Landscape Lighting, the fields such as street lighting. the manufacturing technology of SMD light emitting diode is generally to pass through die bond, bonding wire, point glue, solidify etc. technique by chip, plain conductor, encapsulation glue, the materials such as fluorescent material are arranged in LED support, formation can be launched the air locking of visible or black light, in the time that LED device is worked, encapsulating material is because the heat that absorption LED chip sends produces larger stress, effect of stress is on wire, the phenomenon that is easy to wire disengaging electrode welding plate occurs and cause the dead lamp of device, device reliability is low, and the refractive index of soft silica gel is generally 1.4 left and right, refractive index is low, the light extraction efficiency of device is low, brightness is low.
Summary of the invention
The object of this invention is to provide a kind of SMD LED device of high reliability high brightness, it can overcome the drawback of prior art, effectively solve wire because pressurized easily departs from the problem of electrode welding plate, and by changing encapsulating material, improve the luminous efficiency of device.
In order to solve the existing problem of background technology, the present invention is by the following technical solutions: it comprises package support 1, package support 1 comprises pedestal 2 and metal electrode board 3, metal electrode board 3 is divided into positive electrode plate 3-1 and negative electrode plate 3-2, on pedestal 2, be provided with cavity 4, chip 5 is arranged on cavity 4 inside, put in and on the one end in cavity 4, be provided with groove 9 at positive electrode plate 3-1 and negative electrode plate 3-2, with wire 7 by the bonding wire region welding of the electrode 5-1 on chip 5 and groove 9 bottoms, at the transparent soft silica gel 8 of the interior filling of groove 9, by the connecting portion parcel between wire 7 and groove 9, in cavity 4, be provided with hard silica gel 6, hard silica gel 6 covers chip 5 and wire 7 completely.
Described transparent soft silica gel 8 hardness are HA20-70.
Described hard silica gel 6 hardness are HD40-100, and its refractive index is 1.5-1.7.
The present invention is owing to having adopted transparent soft silica gel 8 by the connecting portion parcel between wire 7 and groove 9, transparent soft silica gel 8 hardness are HA20-70, hardness is lower, in the time that LED device is worked, the stress that the heat that transparent soft silica gel 8 sends due to absorption chip 5 produces is less, active force to wire 7 is very little, can not cause wire 7 to depart from metal electrode board 3 and the phenomenon of the dead lamp of generating device; Owing to having adopted hard silica gel 6 to encapsulate, its hardness is HD40-100, and hardness is high, and under external force direct effect, hard silica gel 6 is difficult for deforming, thereby can not occur that wire 7 is squeezed and the phenomenon of being out of shape or rupturing; And because the refractive index of hard silica gel 6 is high, refractive index, more than 1.5, makes the light extraction efficiency of device high, and the brightness of device is high.
The present invention can effectively solve the problem that prior art exists, adopt the pad of soft silica gel parcel wire and metal electrode board, effectively prevent wire from departing from metal electrode board and the phenomenon of dead lamp between the emergence period, and utilize the refractive index of hard silica gel, make the luminous efficiency of device high, make the brightness of LED device high.
Brief description of the drawings
Fig. 1 is structural representation of the present invention.
Detailed description of the invention
Referring to Fig. 1, this detailed description of the invention is by the following technical solutions: it comprises package support 1, package support 1 comprises pedestal 2 and metal electrode board 3, metal electrode board 3 is divided into positive electrode plate 3-1 and negative electrode plate 3-2, on pedestal 2, be provided with cavity 4, chip 5 is arranged on cavity 4 inside, put in and on the one end in cavity 4, be provided with groove 9 at positive electrode plate 3-1 and negative electrode plate 3-2, with wire 7 by the bonding wire region welding of the electrode 5-1 on chip 5 and groove 9 bottoms, at the transparent soft silica gel 8 of the interior filling of groove 9, by the connecting portion parcel between wire 7 and groove 9, in cavity 4, be provided with hard silica gel 6, hard silica gel 6 covers chip 5 and wire 7 completely.
Described transparent soft silica gel 8 hardness are HA20-70.
Described hard silica gel 6 hardness are HD40-100, and its refractive index is 1.5-1.7.
This detailed description of the invention is owing to having adopted transparent soft silica gel 8 by the connecting portion parcel between wire 7 and groove 9, transparent soft silica gel 8 hardness are HA20-70, hardness is lower, in the time that LED device is worked, the stress that the heat that transparent soft silica gel 8 sends due to absorption chip 5 produces is less, active force to wire 7 is very little, can not cause wire 7 to depart from metal electrode board 3 and the phenomenon of the dead lamp of generating device; Owing to having adopted hard silica gel 6 to encapsulate, its hardness is HD40-100, and hardness is high, and under external force direct effect, hard silica gel 6 is difficult for deforming, thereby can not occur that wire 7 is squeezed and the phenomenon of being out of shape or rupturing; And because the refractive index of hard silica gel 6 is high, refractive index, more than 1.5, makes the light extraction efficiency of device high, and the brightness of device is high.
This detailed description of the invention can effectively solve the problem that prior art exists, adopt the pad of soft silica gel parcel wire and metal electrode board, effectively prevent wire from departing from metal electrode board and the phenomenon of dead lamp between the emergence period, and utilize the refractive index of hard silica gel, make the luminous efficiency of device high, make the brightness of LED device high.

Claims (3)

1. the SMD LED device of a high reliability high brightness, it comprises package support (1), package support (1) comprises pedestal (2) and metal electrode board (3), metal electrode board (3) is divided into positive electrode plate (3-1) and negative electrode plate (3-2), on pedestal (2), be provided with cavity (4), chip (5) is arranged on cavity (4) inside, it is characterized in that putting in and on the one end in cavity (4), being provided with groove (9) at positive electrode plate (3-1) and negative electrode plate (3-2), with wire (7) by the bonding wire region welding of the electrode (5-1) on chip (5) and groove (9) bottom, in groove (9), fill transparent soft silica gel (8), by the connecting portion parcel between wire (7) and groove (9), in cavity (4), be provided with hard silica gel (6), hard silica gel (6) covers chip (5) and wire (7) completely.
2. the SMD LED device of a kind of high reliability high brightness according to claim 1, is characterized in that: described transparent soft silica gel (8) hardness is HA20-70.
3. the SMD LED device of a kind of high reliability high brightness according to claim 1, is characterized in that: described hard silica gel (6) hardness is HD40-100, and its refractive index is 1.5-1.7.
CN201210286695.5A 2012-08-13 2012-08-13 A kind of SMD LED device of high reliability high brightness Active CN103594599B (en)

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Application Number Priority Date Filing Date Title
CN201210286695.5A CN103594599B (en) 2012-08-13 2012-08-13 A kind of SMD LED device of high reliability high brightness

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Application Number Priority Date Filing Date Title
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CN103594599B true CN103594599B (en) 2016-05-04

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109727963A (en) * 2019-01-11 2019-05-07 深圳市同一方光电技术有限公司 A kind of novel formal dress COB light source of the not dead lamp encapsulation of thermostable

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006253288A (en) * 2005-03-09 2006-09-21 Fuji Photo Film Co Ltd Light emitting device and manufacturing method thereof
CN201307604Y (en) * 2008-12-05 2009-09-09 深圳市龙岗区横岗光台电子厂 Led packaging structure
CN202215985U (en) * 2011-08-08 2012-05-09 河北格林光电技术有限公司 Metal bolt type high-power LED (light-emitting diode) light source
CN102456824A (en) * 2010-10-21 2012-05-16 展晶科技(深圳)有限公司 Packaging structure of light emitting diode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006253288A (en) * 2005-03-09 2006-09-21 Fuji Photo Film Co Ltd Light emitting device and manufacturing method thereof
CN201307604Y (en) * 2008-12-05 2009-09-09 深圳市龙岗区横岗光台电子厂 Led packaging structure
CN102456824A (en) * 2010-10-21 2012-05-16 展晶科技(深圳)有限公司 Packaging structure of light emitting diode
CN202215985U (en) * 2011-08-08 2012-05-09 河北格林光电技术有限公司 Metal bolt type high-power LED (light-emitting diode) light source

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Inventor after: Zhang Mingwu

Inventor after: Li Shaojun

Inventor before: Cheng Zhijian

COR Change of bibliographic data
CP01 Change in the name or title of a patent holder

Address after: Baoan District Shiyan street Shenzhen city Guangdong province 518000 White Pine Road in Yuntai technology industrial plant building 6, 8, 9 floor

Patentee after: SHENZHEN SMALITE OPTO-ELECTRONIC CO., LTD.

Address before: Baoan District Shiyan street Shenzhen city Guangdong province 518000 White Pine Road in Yuntai technology industrial plant building 6, 8, 9 floor

Patentee before: Shenzhen Smalite Optoelectronics Co., Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20170320

Address after: 330000 Jiangxi Airport Economic Zone, small and medium enterprises in the first floor of Industrial Park Office

Patentee after: Jiangxi Hongli photoelectric Co., Ltd.

Address before: Baoan District Shiyan street Shenzhen city Guangdong province 518000 White Pine Road in Yuntai technology industrial plant building 6, 8, 9 floor

Patentee before: SHENZHEN SMALITE OPTO-ELECTRONIC CO., LTD.