CN103594548A - 一种能够提高晶硅太阳能电池转换效率的方法 - Google Patents
一种能够提高晶硅太阳能电池转换效率的方法 Download PDFInfo
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- CN103594548A CN103594548A CN201310234487.5A CN201310234487A CN103594548A CN 103594548 A CN103594548 A CN 103594548A CN 201310234487 A CN201310234487 A CN 201310234487A CN 103594548 A CN103594548 A CN 103594548A
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- rare earth
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 25
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 50
- 239000010703 silicon Substances 0.000 claims abstract description 50
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 30
- 238000005530 etching Methods 0.000 claims abstract description 7
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims abstract description 7
- 238000005245 sintering Methods 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 27
- 238000002513 implantation Methods 0.000 claims description 17
- 239000006117 anti-reflective coating Substances 0.000 claims description 13
- 238000002347 injection Methods 0.000 claims description 12
- 239000007924 injection Substances 0.000 claims description 12
- 238000012546 transfer Methods 0.000 claims description 10
- 210000002268 wool Anatomy 0.000 claims description 6
- -1 rare earth ions Chemical class 0.000 abstract description 18
- 238000005468 ion implantation Methods 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 150000002910 rare earth metals Chemical class 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000004140 cleaning Methods 0.000 abstract description 5
- 230000003667 anti-reflective effect Effects 0.000 abstract 4
- 238000010923 batch production Methods 0.000 abstract 1
- 238000007747 plating Methods 0.000 abstract 1
- 238000012360 testing method Methods 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 4
- 238000002189 fluorescence spectrum Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000000295 emission spectrum Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000000695 excitation spectrum Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000005658 nuclear physics Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
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CN201310234487.5A CN103594548B (zh) | 2013-06-14 | 2013-06-14 | 一种能够提高晶硅太阳能电池转换效率的方法 |
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CN201310234487.5A CN103594548B (zh) | 2013-06-14 | 2013-06-14 | 一种能够提高晶硅太阳能电池转换效率的方法 |
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CN103594548A true CN103594548A (zh) | 2014-02-19 |
CN103594548B CN103594548B (zh) | 2016-02-03 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109689586A (zh) * | 2016-04-12 | 2019-04-26 | 旭硝子欧洲玻璃公司 | 减反射玻璃基板及其制造方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001077388A (ja) * | 1999-09-07 | 2001-03-23 | Sumitomo Osaka Cement Co Ltd | 太陽電池およびその製造方法 |
CN101728448A (zh) * | 2008-10-30 | 2010-06-09 | 鸿富锦精密工业(深圳)有限公司 | 太阳能电池 |
CN101937944A (zh) * | 2010-08-31 | 2011-01-05 | 上海交通大学 | 双面钝化的晶体硅太阳电池的制备方法 |
CN102456762A (zh) * | 2010-10-27 | 2012-05-16 | 信义光伏产业(安徽)控股有限公司 | 晶体硅太阳能电池和非晶硅太阳能电池 |
-
2013
- 2013-06-14 CN CN201310234487.5A patent/CN103594548B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001077388A (ja) * | 1999-09-07 | 2001-03-23 | Sumitomo Osaka Cement Co Ltd | 太陽電池およびその製造方法 |
CN101728448A (zh) * | 2008-10-30 | 2010-06-09 | 鸿富锦精密工业(深圳)有限公司 | 太阳能电池 |
CN101937944A (zh) * | 2010-08-31 | 2011-01-05 | 上海交通大学 | 双面钝化的晶体硅太阳电池的制备方法 |
CN102456762A (zh) * | 2010-10-27 | 2012-05-16 | 信义光伏产业(安徽)控股有限公司 | 晶体硅太阳能电池和非晶硅太阳能电池 |
Non-Patent Citations (1)
Title |
---|
D.DIAW: "Effect of ion-implanted Eu+3 on the conversion efficiency of amorphous silicon solar cell", 《SOLAR ENERGY MATERIALS AND SOLAR CELLS》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109689586A (zh) * | 2016-04-12 | 2019-04-26 | 旭硝子欧洲玻璃公司 | 减反射玻璃基板及其制造方法 |
CN109689586B (zh) * | 2016-04-12 | 2021-11-19 | 旭硝子欧洲玻璃公司 | 减反射玻璃基板及其制造方法 |
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CN103594548B (zh) | 2016-02-03 |
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Denomination of invention: Method capable of improving conversion efficiency of crystalline silicon solar cell Effective date of registration: 20200708 Granted publication date: 20160203 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2020330000459 |
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Date of cancellation: 20220110 Granted publication date: 20160203 Pledgee: Dongyang Branch of China Construction Bank Co.,Ltd. Pledgor: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Registration number: Y2020330000459 |
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Effective date of registration: 20240308 Address after: 644600 Building 72, Jinrun Industrial Park, Gaoxin Community, Gaochang Town, Xuzhou District, Yibin City, Sichuan Province Patentee after: Sichuan Dongci New Energy Technology Co.,Ltd. Country or region after: China Address before: 322118 Hengdian industrial district, Dongyang City, Jinhua, Zhejiang Patentee before: HENGDIAN GROUP DMEGC MAGNETICS Co.,Ltd. Country or region before: China |