CN101728448A - 太阳能电池 - Google Patents

太阳能电池 Download PDF

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CN101728448A
CN101728448A CN200810305285A CN200810305285A CN101728448A CN 101728448 A CN101728448 A CN 101728448A CN 200810305285 A CN200810305285 A CN 200810305285A CN 200810305285 A CN200810305285 A CN 200810305285A CN 101728448 A CN101728448 A CN 101728448A
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solar cell
light
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丁原杰
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hon Hai Precision Industry Co Ltd
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Abstract

本发明提供一种太阳能电池,其包括包括光伏转换模组,用于吸收太阳光,并将其转化为电能。该光伏转换模组具有光入射面。该光入射面上设置有玻璃层。该玻璃层内掺杂有铕元素,用于将太阳光中的短波长的光转换为长波长的光,再进入光伏转换模组以提高太阳能电池的光转化效率。

Description

太阳能电池
技术领域
本发明涉及光电转化技术领域,特别涉及一种太阳能电池。
背景技术
太阳能电池是利用可再生环保能源太阳能而实现发电,即将太阳的辐射能通过半导体材料转变为电能(请参见“Grown junction GaAs solar cell”,Shen,C.C.;Pearson,G.L.;Proceedings of the IEEE,Volume 64,Issue 3,March 1976Page(s):384-385)。太阳能电池板的结构主要包括光电转化层。该光电转化层由P型半导体材料和N型半导体材料形成的PN结组成。当太阳光照射到光电转化层的半导体材料上时,该光电转化层吸收太阳光中与该半导体材料对应波段的光。而该被吸收光中的光子与组成半导体的原子及价电子发生碰撞,产生电子空穴对,从而使光能以产生电子空穴对的形式转变为电能实现光电转换过程,并对外接在P型半体材料层和N型半导体材料层的金属引线的负载供电。
目前,太阳能电池通常包括CdTe或硅基半导体材料制作的光电转化层,其最多只能吸收波长为400-1100nm之间的光。而该波长范围以外的太阳光会被该光电转化层反射,并不能被转化为电能。由此,该部分的太阳光被浪费,使得太阳能电池的光转换效率较低。
发明内容
因此,有必要提供一种太阳能电池,以解决以上问题,并增加太阳能电池对太阳光的转换效率。
以下将以实施例说明一种太阳能电池。
一种太阳能电池,包括其包括包括光伏转换模组,用于吸收太阳光,并将其转化为电能。该光伏转换模组具有光入射面。该光入射面上设置有玻璃层。该玻璃层内掺杂有铕元素,用于将太阳光中的短波长的光转换为长波长的光,再进入光伏转换模组以提高太阳能电池的光转化效率。
与现有技术相比,该太阳能电池的玻璃层掺杂铕元素,该铕元素可将与该铕元素对应的短波长的光转换为长波长的光,使光经过掺杂铕元素的玻璃层后,其部分波长被增加后,进入光伏转换模组,增加被光伏转换模组吸收光的波段范围,从而提高太阳能电池的光转换效率。
附图说明
图1是本技术方案实施例提供的太阳能电池结构示意图。
图2是形成图1玻璃层的硼硅酸钠玻璃中铕离子的吸收光谱。
图3是形成图1玻璃层的硼硅酸钠玻璃中铕离子的发射光谱。
具体实施方式
下面将结合附图及实施例对本技术方案实施例提供的太阳能电池作进一步详细说明。
请参阅图1,本技术方案实施例提供的太阳能电池10,其包括光伏转换模组11及设置于光伏转换模组11的玻璃层12,使太阳光经玻璃层12吸收后进入光伏转换模组11。
该光伏转换模组11可由一个或多个光伏转换单元组成,或为多个光伏转换单元组成的阵列模组。另,光伏转换模组11可为单面或多面接收入射太阳光的电池模组,即具有至少一个光入射面。本实施例中,光伏转换模组11由一个光伏转换单元组成,其包括透明导电层111、集电极层112及设置于透明导电层111与集电极层112之间的光电转化层113。该光电转化层113具有一个入光面101及与入光面101相对的表面102,用于将射入该光电转化层113的太阳光中与该光电转化层113对应波长的太阳光(即光能)转化为电能。该光电转化层113可采用硅基半导体材料、III-V族或II-VI族化合物组成的PN结制成。该表面102也可为光入射面,以供太阳光同时入射表面102与入光面101。当然,该光伏转换模组11与入光面101与表面102相接的侧面也可设置为光入射面。
本实施例中,透明导电层111沉积于入光面101,该集电极层112沉积于表面102,用于分别与负载或外部电路的两极电气连通,将经光电转化层113转化的电能传输至该负载或外部电路,以实现向该负载或外部电路供电的目的。该透明导电层111可为平板玻璃表面通过物理或者化学镀膜的方法均匀的镀上一层透明的导电氧化物薄膜形成。该氧化物包括CdO、ZnO、ZnO:M(M=Al,Ga,In,F)等。该集电极层112可为铝或其他金属板。
使用中,太阳光射入透明导电层111并进入光电转化层113,然后光电转化层113将与该光电转化层113对应波长的太阳光转化为电能,使该电能经透明导电层111与集电极层112输出,实现供电。
该玻璃层12内掺杂有铕元素,用于将太阳光中波长为350-470nm的入射光转化为570-720nm的出射光(参见图2与图3)。该玻璃层12可为硅酸盐玻璃与掺杂于硅酸盐玻璃的铕元素的组成。优选地,100mol的硼硅酸盐玻璃中至多掺杂氧化铕2.5mol。本实施例中,玻璃层12包括硼硅酸盐玻璃与掺杂于硼硅酸盐玻璃的三价铕元素,即为抗反射玻璃层,用于在减少太阳光入射时发生全反射的同时,将太阳光中波长为350-470nm的入射光转化为570-720nm的出射光。该三价铕元素在硼硅酸盐玻璃中是以共价离子型氧化物,即氧化铕的形态而存在。故,该三价铕元素存在于氧化物中与氧元素形成离子型共价键,其中铕原子倾向于失去三个电子,使其具有与离子相类似的特性,因此也可被称之为三价铕离子,即Eu3+。具体地,该硼硅酸盐玻璃主要包括氧化硅(SiO2)、氧化硼(B2O3)与碱金属氧化物(如:氧化钠Na2O)。该掺杂于硼硅酸盐玻璃内的铕元素以氧化铕(Eu2O3)的形式存在。
根据掺杂Eu3+的硼硅酸盐玻璃的成分选择原料及合适的条件,从而制备掺杂Eu3+的硼硅酸盐玻璃。例如,可通过将金属铕单质或含二价或三价的铕元素的化合物(如:氯化物、氧化物、碳酸化物等)与制备硼硅酸盐玻璃的原料混合后,再加热至1300度以上任意温度,使其熔化并保温5分钟至10小时中任意时间段后冷却至室温,从而获得掺杂Eu3+的硼硅酸盐玻璃。其中,该加热温度与保温时间可根据选择的原料、采用的设备与其他需要而在以上范围内选择。
以下将列举出一种掺杂Eu3+的硼硅酸盐玻璃的制备方法,帮助理解本发明,但不限于本实施例所列举的制备方法。
该掺杂Eu3+的硼硅酸盐玻璃的组成采用以下分子式表示59SiO2-33B2O3-8Na2O-xEu2O3(x=0.5~2.5mol%),即,59mol的SiO2、33mol的B2O3与8mol的Na2O形成的摩尔质量为100mol的硼硅酸盐玻璃中掺杂xmol的Eu2O3。表1中列出五个掺杂不同浓度Eu3+的硼硅酸盐玻璃的玻璃样品。根据表1列出的五个玻璃样品的成分分别称量出相应质量的SiO2、H3BO3、Na2CO3与Eu2O3,并将其混合均匀后放入白金坩埚内以10oC/min(摄氏度/分钟)升温至1400-1500oC,保温30min,并将熔融态的混合物浇铸在预热铁质模具上急冷形成最终的玻璃样品,再经退火处理消除应力。
表1玻璃样品的成分(mol%)
  玻璃样品   玻璃   组成
  59N-33B-8S-xEu2O3   SiO2   B2O3   Na2O   Eu2O3
  (a)x=0.5   56.05   35.79   8.16   0.27
  (b)x=1.0   56.18   35.61   8.21   0.85
  (c)x=1.5   56.84   35.00   8.16   1.00
  (d)x=2.0   57.02   34.87   8.11   1.11
  (e)x=2.5   56.68   35.12   8.2   2.47
其中,N代表SiO2,B代表B2O3,S代表Na2O。
请参阅图2及图3,本实施例中制作玻璃层12的五个玻璃样品(a)-(e)(列于表1中)的吸收光谱与放射光谱。
请参阅图2,为利用紫外可见光谱仪分析表1中添加不同浓度氧化铕的玻璃样品的吸收光谱。根据分析结果可以看出,五个玻璃样品(a)-(e)均依序在577nm、531nm、525nm、464nm、413nm、393nm、376nm与361nm出现吸收峰,即该五个玻璃样品(a)-(e)可以吸收577nm、531nm、525nm、464nm、413nm、393nm、376nm与361nm波长的光。
相应地,仅采用464nm当作荧光光谱的激发源(即,入射光源)继续对该五个玻璃样品(a)-(e)进行荧光吸收光谱分析,以获得五个玻璃样品的放射光谱。请参阅图3,根据分析结果,五个玻璃样品均依序在578nm、591nm、615nm、652nm与700nm观察到放射峰,即该五个玻璃样品(a)(e)可以放射出578nm、591nm、615nm、652nmy与700nm波长的光。与入射光谱的波长(464nm)相比,射出光的波长均得到相应的增加。相类似地,如果采用其他波长的荧光光谱作为激发源时,也同样可以获得比入射光谱对应波长大的光谱,利于光电转化层113吸收。
综上所述,该五个玻璃样品(a)-(e)可吸收波长范围为350-470nm的光,并将其至少转化为波长范围在570-720nm的光,可用于将太阳光中波长较短的350-470nm的光转化为波长较长的570-720nm的光。采用该玻璃样品制作的玻璃层12设置于太阳能电池10时,可使该太阳能电池10吸收350-470nm范围内的波长,从而提高光利用率。
可以理解的是,对于本领域的普通技术人员来说,可以根据本发明的技术构思做出其它各种相应的改变与变形,而所有这些改变与变形都应属于本发明权利要求的保护范围。

Claims (12)

1.一种太阳能电池,其包括光伏转换模组,用于吸收太阳光,并将其转化为电能,该光伏转换模组具有光入射面,其特征在于,该光入射面上设置有玻璃层,所述玻璃层内掺杂铕元素,用于将太阳光中的短波长的光转换为长波长的光,再射入光伏转换模组。
2.如权利要求1所述的太阳能电池,其特征在于,所述玻璃层包括硅酸盐玻璃及掺杂于硅酸盐玻璃的铕元素。
3.如权利要求1所述的太阳能电池,其特征在于,所述玻璃层包括硼硅酸盐玻璃及掺杂于硼硅酸盐玻璃的铕元素。
4.如权利要求1、2或3所述的太阳能电池,其特征在于,所述玻璃层中掺杂氧化铕,用于将太阳光中波长350-470nm的入射光转化为波长570-720nm的出射光。
5.如权利要求3述的太阳能电池,其特征在于,所述硼硅酸盐玻璃中掺杂氧化铕,100mol的硼硅酸盐玻璃中至多掺杂氧化铕2.5mol。
6.如权利要求3述的太阳能电池,其特征在于,所述硼硅酸盐玻璃包括氧化硅、氧化硼与碱金属氧化物。
7.如权利要求1所述的太阳能电池,其特征在于,所述玻璃层为抗反射玻璃层,用于减少太阳光入射时发生全反射。
8.如权利要求1所述的太阳能电池,其特征在于,所述光伏转换模组包括透明导电层、集电极层及设置于透明导电层与集电极层之间的光电转化层,所述光电转化层具有入光面,所述透明导电层设置在入光面上,所述玻璃层设置在透明导电层上并与入光面相对的表面,使光依次经过玻璃层与透明导电层后进入光电转化层。
9.如权利要求8所述的太阳能电池,其特征在于,所述入光面的相对表面设置为光入射面。
10.如权利要求8所述的太阳能电池,其特征在于,所述与光入射面相接的侧面设置为光入射面。
11.如权利要求8所述的太阳能电池,其特征在于,所述光电转化层为由半导体材料制成的PN结。
12.如权利要求1所述的太阳能电池,其特征在于,所述光伏转换模组为多个光伏转换单元组成的阵列。
CN200810305285A 2008-10-30 2008-10-30 太阳能电池 Pending CN101728448A (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102034887A (zh) * 2010-10-19 2011-04-27 长春理工大学 新型复合结构高效硅薄膜光伏电池
CN103594548A (zh) * 2013-06-14 2014-02-19 横店集团东磁股份有限公司 一种能够提高晶硅太阳能电池转换效率的方法

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KR101497500B1 (ko) * 2014-06-16 2015-03-03 한국과학기술연구원 파장변환층을 구비하는 태양전지 및 그의 제조 방법

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US4188238A (en) * 1978-07-03 1980-02-12 Owens-Illinois, Inc. Generation of electrical energy from sunlight, and apparatus
JP3247876B2 (ja) * 1999-03-09 2002-01-21 日本板硝子株式会社 透明導電膜付きガラス基板

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102034887A (zh) * 2010-10-19 2011-04-27 长春理工大学 新型复合结构高效硅薄膜光伏电池
CN103594548A (zh) * 2013-06-14 2014-02-19 横店集团东磁股份有限公司 一种能够提高晶硅太阳能电池转换效率的方法
CN103594548B (zh) * 2013-06-14 2016-02-03 横店集团东磁股份有限公司 一种能够提高晶硅太阳能电池转换效率的方法

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