CN105762206A - 晶体硅及其制备方法 - Google Patents

晶体硅及其制备方法 Download PDF

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CN105762206A
CN105762206A CN201610221223.XA CN201610221223A CN105762206A CN 105762206 A CN105762206 A CN 105762206A CN 201610221223 A CN201610221223 A CN 201610221223A CN 105762206 A CN105762206 A CN 105762206A
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crystalline silicon
silicon
cerium
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邓浩
付楠楠
王向东
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Longi Green Energy Technology Co Ltd
Ningxia Longi Silicon Materials Co Ltd
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    • H01—ELECTRIC ELEMENTS
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Abstract

本发明的晶体硅材料包括硅、镓及元素X，所述元素X的浓度为1010～1016原子/立方厘米。利用如上所述的晶体硅制造的太阳能电池，转换效率大于20％。本发明还提供如上所述的晶体硅的制备方法。本发明的晶体硅材料利用镓元素替代现有的P型晶体硅中的硼元素，可以避免硼氧复合体的生成，从而降低光致衰减作用。并且，掺杂的元素X通过下转换作用，能够有效的提高硅材料对紫外波段光的利用率，利用该晶体制得的太阳能电池显著提高了转换效率。

Description

晶体硅及其制备方法
技术领域
本发明属于单晶硅制造技术领域，涉及一种掺杂晶体硅及其制备方法。
背景技术
随着全球各国经济发展对能源需求的日益增加，许多发达国家越来越重视对可再生能源、环保能源以及新型能源的开发与研究。作为一种清洁、高效和永不衰竭的新能源，在新世纪中，各国政府都将太阳能的利用作为国家可持续发展战略的重要内容。晶体硅作为一种常用的太阳能电池基础材料，其品质直接关系到太阳能电池的转换效率及使用寿命。目前，晶体硅太阳能电池存在以下问题：一方面，到达地面的太阳能光谱(AM1.5)的能量通常为1000w/m2左右，波长范围为200～2500nm，晶体硅材料对红外波段区域及紫外波段区域利用较低；另一方面，常用的P型晶体硅电池存在衰减较大的问题。因此，有必要对晶体硅材料进行性能改进，提供一种能提高电池转换效率并降低电池光衰减的晶体硅材料。
发明内容
本发明的目的是提供一种能提高电池转换效率并降低电池光衰减的晶体硅材料，并提供该晶体硅材料的制备方法。
本发明的具体技术解决方案如下：
该晶体硅包括硅、镓及镧系稀土元素X，其中镧系稀土元素X的浓度为1010～1016原子/立方厘米。
上述镧系稀土元素X为镧、铈、钕任意一种或多种的组合，或为镧、镧的氧化物、铈、铈的氧化物、钕、钕的氧化物任意一种或多种的组合，或为镧、镧的化合物、铈、铈的化合物、钕、钕的化合物任意一种或多种的组合。
上述镓的浓度为5×1017～1×1015原子/立方厘米。
该晶体硅的制备方法包括步骤：
1】取太阳能级多晶硅原料，在所述太阳能级多晶硅原料中加入一定量的镓、以及浓度为1010～1016原子/立方厘米的镧系稀土元素X，制得单晶硅或多晶硅，所述单晶硅或多晶硅中稀土元素的浓度为1010～1016原子/立方厘米；
2】对步骤1生成的单晶硅或多晶硅在650℃～1000℃条件下进行退火处理。
本发明的优点：
本发明的晶体硅材料利用镓元素替代现有的P型晶体硅中的硼元素，可以避免硼氧复合体的生成，从而降低光致衰减作用。并且，掺杂的元素X通过下转换作用，能够有效的提高硅材料对紫外波段光的利用率，利用该晶体制得的太阳电池显著提高了转换效率。
两种效能叠加，可达成更高效的光伏转换效率提升作用，利用本发明的晶体硅材料制造的太阳能电池，转换效率大于20％，光致衰减小于1％。
具体实施方式
以下将提供多个具体实施方式对本发明进行详细说明。
本技术方案第一实施例提供一种晶体硅，包括硅、镓及镧系稀土元素X，其中镧系稀土元素X的浓度为1010～1016原子/立方厘米。
本实施例中，晶体硅材料为单晶硅。镓的浓度为5×1017～1×1015原子/立方厘米。镧系稀土元素X，优选为镧(La)、铈(Ce)、钕(Nd)或其组合，当然，其中的镧(La)、铈(Ce)、钕(Nd)还可以分别为其氧化物或化合物，例如：LaO3、铈铝、CeO2、Nd2O3、Nd(OH)3。
本实施例中，镧系稀土元素X选取镧、铈及钕的组合，组合的浓度之和1.0×1014原子/立方厘米。
本实施例的晶体硅材料利用镓元素替代现有的P型晶体硅中的硼元素，可以避免硼氧复合体的生成，从而降低光致衰减作用。并且，掺杂的镧系稀土元素X通过下转换作用，能够有效的提高硅材料对紫外波段光的利用率。
本技术方案第二实施例提供一种晶体硅太阳能电池。该太阳能电池采用常规四主栅工艺、PERC工艺制成。本实施例中，采用第一实施例的晶体硅材料，经PERC工艺制成。太阳能电池的转换效率大于20％，6小时测试光致衰减小于1％。
本技术方案第三实施例提供一种晶体硅的制备方法，包括以下步骤：
首先，提供太阳能级多晶硅原料，在该太阳能级多晶硅原料中加入一定量的镓、以及浓度为1010～1016原子/立方厘米的元素X，制得单晶硅或多晶硅，该单晶硅或多晶硅中稀土元素的浓度为1010～1016原子/立方厘米。
具体地，元素X优选为镧(La)、铈(Ce)、钕(Nd)或其组合。当然，其中的镧(La)、铈(Ce)、钕(Nd)还可以分别为其氧化物等化合物。本实施例中，元素X选取镧、铈及钕的组合的浓度之和1.0×1014原子/立方厘米。
以直拉法制造单晶硅为例，在等径生长阶段，调节生长工艺，使得晶转大于等于15转每分钟，拉晶速度大于等于1.5毫米每分钟。优选地，在拉晶收尾完成后，对晶体硅的尾部进行热处理。具体地，收尾结束后保持晶体硅的尾部在加热器的加热范围内，控制加热器保持在晶体收尾温度2小时以上，停炉冷却时间5小时以上。
然后，将所述的单晶硅或多晶硅，在650℃～1000℃进行退火处理。将获得的单晶硅或多晶硅进行切片，使所得硅片在惰性气体保护下，650℃～1000℃进行退火处理1-60min。
本实施例的晶体硅的制备方法，能获得低光致衰减及高转换效率的晶体硅。

Claims (10)

1.晶体硅，包括硅、镓及镧系稀土元素X，所述镧系稀土元素X的浓度为1010～1016原子/立方厘米。
2.如权利要求1所述的晶体硅，其特征在于，所述镧系稀土元素X为镧、铈、钕任意一种或多种的组合。
3.如权利要求1所述的晶体硅，其特征在于，所述镧系稀土元素X为镧、镧的氧化物、铈、铈的氧化物、钕、钕的氧化物任意一种或多种的组合。
4.如权利要求1所述的晶体硅，其特征在于，所述镧系稀土元素X为镧、镧的化合物、铈、铈的化合物、钕、钕的化合物任意一种或多种的组合。
5.如权利要求1至4中任一项所述的晶体硅，其特征在于，所述镓的浓度为5×1017～1×1015原子/立方厘米。
6.利用如权利要求1至5中任一项所述的晶体硅制造的太阳能电池，其特征在于，所述太阳能电池的转换效率大于20％。
7.如权利要求6所述的晶体硅制造的太阳能电池，其特征在于，所述太阳能电池的光致衰减小于1％。
8.一种晶体硅的制备方法，其特征在于，包括步骤：
1】取太阳能级多晶硅原料，在所述太阳能级多晶硅原料中加入5×1017～1×1015原子/立方厘米的镓、以及浓度为1010～1016原子/立方厘米的镧系稀土元素X，制得单晶硅或多晶硅，所述单晶硅或多晶硅中稀土元素的浓度为1010～1016原子/立方厘米；
2】对步骤1生成的单晶硅或多晶硅在650℃～1000℃条件下进行退火处理。
9.如权利要求8所述的晶体硅的制备方法，其特征在于，所述镧系稀土元素X为镧、铈、钕任意一种或多种的组合。
10.如权利要求9所述的晶体硅的制备方法，其特征在于，所述镧系稀土元素X为镧、镧的氧化物、铈、铈的氧化物、钕、钕的氧化物任意一种或多种的组合。
CN201610221223.XA 2016-04-11 2016-04-11 晶体硅及其制备方法 Pending CN105762206A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108133974A (zh) * 2018-01-29 2018-06-08 泰州隆基乐叶光伏科技有限公司 一种多晶掺镓双面太阳电池及其制备方法
CN108172642A (zh) * 2018-01-29 2018-06-15 泰州隆基乐叶光伏科技有限公司 一种单晶掺镓双面太阳电池及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090199902A1 (en) * 2006-06-29 2009-08-13 Schmid Technology Systems Gmbh Silicon solar cells comprising lanthanides for modifying the spectrum and method for the production thereof
CN101399297B (zh) * 2008-10-24 2010-09-22 无锡尚德太阳能电力有限公司 一种掺镓单晶硅太阳电池及其制造方法
CN102828242A (zh) * 2012-09-06 2012-12-19 西安隆基硅材料股份有限公司 含有下转换发光量子点的晶体硅及其制备方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101654804A (zh) * 2009-09-24 2010-02-24 浙江大学 一种在晶体生长过程中控制掺镓直拉硅电阻率的方法
JP2012106881A (ja) * 2010-11-16 2012-06-07 Sumco Corp ｎ型多結晶シリコンウェーハ並びにｎ型多結晶シリコンインゴット及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090199902A1 (en) * 2006-06-29 2009-08-13 Schmid Technology Systems Gmbh Silicon solar cells comprising lanthanides for modifying the spectrum and method for the production thereof
CN101399297B (zh) * 2008-10-24 2010-09-22 无锡尚德太阳能电力有限公司 一种掺镓单晶硅太阳电池及其制造方法
CN102828242A (zh) * 2012-09-06 2012-12-19 西安隆基硅材料股份有限公司 含有下转换发光量子点的晶体硅及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108133974A (zh) * 2018-01-29 2018-06-08 泰州隆基乐叶光伏科技有限公司 一种多晶掺镓双面太阳电池及其制备方法
CN108172642A (zh) * 2018-01-29 2018-06-15 泰州隆基乐叶光伏科技有限公司 一种单晶掺镓双面太阳电池及其制备方法

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