CN103545282B - Insulated gate bipolar thyristor module and electrode power terminal - Google Patents

Insulated gate bipolar thyristor module and electrode power terminal Download PDF

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Publication number
CN103545282B
CN103545282B CN201310541204.1A CN201310541204A CN103545282B CN 103545282 B CN103545282 B CN 103545282B CN 201310541204 A CN201310541204 A CN 201310541204A CN 103545282 B CN103545282 B CN 103545282B
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electrode
power terminal
chip
battery lead
liner plate
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CN103545282A (en
Inventor
徐凝华
刘国友
吴义伯
窦泽春
忻兰苑
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Zhuzhou CRRC Times Electric Co Ltd
Zhuzhou CRRC Times Semiconductor Co Ltd
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Zhuzhou CSR Times Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

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Abstract

The invention provides a kind of insulated gate bipolar thyristor module and electrode power terminal, wherein, electrode power terminal comprises, first electrode and the second electrode, described first electrode and described second electrode are made up of a multi-layer sheet, described multi-layer sheet comprises N layer battery lead plate, insulation board is provided with between adjacent two layers battery lead plate, wherein, realize electrical connection by least one first through hole between M layer battery lead plate and form described first electrode, and the first through hole described in each and the equal electric insulation of each battery lead plate except described M layer battery lead plate, at least one deck battery lead plate except described M layer battery lead plate forms described second electrode.Owing to realizing electrical connection by the first through hole between multi-layer electrode plate, multi-layer electrode plate can be realized alternately, the relative area of electrode runs parallel can be increased like this, can stray inductance be reduced.The stray inductance produced based on the insulated gate bipolar thyristor module of this electrode power terminal is also lower.

Description

Insulated gate bipolar thyristor module and electrode power terminal
Technical field
The present invention relates to power electronic equipment technical field, particularly a kind of insulated gate bipolar thyristor module and electrode power terminal.
Background technology
In power semiconductor modular, the interconnection of chip and the extraction of electrode power terminal, all can bring a certain amount of stray inductance, and these stray inductances can cause negative effect to circuit and device.
Usually, the stray inductance of inside modules mainly contains the structures shape of liner plate circuit layout and electrode power terminal.Wherein, the stray inductance produced by electrode power terminal accounts for major part.
At present, conventional electrode power terminal as shown in Figure 1, is two parallel battery lead plates 01 and 02.In order to reduce the inductance of electrode power terminal, most by making two parallel electrode plates 01 and 02 distance near reducing two parallel electrode plates parallel to each other at present.Make the sense of current flowing through two parallel electrode plates contrary, make like this to produce mutual inductance between two parallel electrode plates, the mutual inductance of this generation can slacken respective self-induction simultaneously.The formula I of the stray inductance introduced by electrode power terminal rerminal=I collect+ I emitter-2M terminal(wherein, I collectfor the self-induction of collector electrode, I emitterfor the self-induction of emitter, M terminalbe the mutual inductance of two electrodes) known, the mutual inductance that electrode power terminal produces is larger, its total stray inductance I produced terminalless.Because two battery lead plates are at a distance of nearer, parallel relative area is larger, mutual inductance M terminallarger, then total inductance is less.But, in order to ensure the electric insulation of two parallel electrode plates, even if be provided with the insulating material of high insulation resistance between two parallel electrode plates, the distance also certain requirement of demand fulfillment of two parallel electrode plates.This just makes the inductance introduced by electrode power terminal larger.Because the inductance introduced by electrode power terminal occupies sizable ratio in the total stray inductance of module, therefore, the stray inductance reducing the introducing of electrode power terminal has remarkable result to the stray inductance reducing module, therefore, how reducing the stray inductance that electrode power terminal introduces is those skilled in the art's problems urgently to be resolved hurrily.
Summary of the invention
In view of this, on the one hand, the invention provides a kind of new electrode power terminal, so that the stray inductance of insulated gate bipolar thyristor module can be reduced, especially reduce the stray inductance due to the introducing of electrode power terminal.
On the other hand, present invention also offers a kind of insulated gate bipolar thyristor module of the low stray inductance based on above-mentioned electrode power terminal.
In order to realize foregoing invention object, present invention employs following technical scheme:
A kind of electrode power terminal, at least comprise, first electrode and the second electrode, described first electrode and described second electrode are made up of a multi-layer sheet, described multi-layer sheet comprises N layer battery lead plate, insulation board is provided with between adjacent two layers battery lead plate, wherein, realize electrical connection by least one first through hole between M layer battery lead plate and form described first electrode, and the first through hole described in each and the equal electric insulation of each battery lead plate except described M layer battery lead plate, at least one deck battery lead plate except described M layer battery lead plate forms described second electrode;
Wherein, M >=2, N >=3, N>M, M, N are natural number.
More preferably, described battery lead plate except described M layer battery lead plate at least comprises two-layer, described at least one deck battery lead plate except described M layer battery lead plate forms the second electrode of described electrode power terminal, be specially, each battery lead plate except described M layer battery lead plate realizes electrical connection by least one second through hole and forms described second electrode, and the equal electric insulation of each battery lead plate of described second through hole and described M layer battery lead plate.
More preferably, also comprise third electrode, described battery lead plate except described M layer battery lead plate at least comprises two-layer, described battery lead plate except described M layer battery lead plate comprises Part I and Part II, wherein, the battery lead plate of described Part I forms described second electrode, and the battery lead plate of described Part II forms described third electrode.
More preferably, described Part I at least comprises two-layer battery lead plate, and the battery lead plate of described Part I realizes electrical connection by least one second through hole and forms described second electrode.
More preferably, described Part II at least comprises two-layer battery lead plate, and the battery lead plate of described Part II realizes electrical connection by least one third through-hole and forms described third electrode.
A kind of insulated gate bipolar thyristor module, comprise, at least one liner plate, be positioned at least one igbt chip on described liner plate, at least one FRD chip and electrode power terminal, described electrode power terminal adopts the electrode power terminal described in any one of claim 1-5, described first electrode is collector electrode, and described second electrode is emitter;
The collector electrode of the collector electrode of described igbt chip and the negative electrode of described FRD chip and described electrode power terminal is electrically connected, and the emitter of the emitter of described igbt chip and the anode of FRD chip and described electrode power terminal is electrically connected;
Wherein, at least one igbt chip and/or at least one FRD chip to its electrical connection described electrode power terminal between current path be the path of near linear, at least one current loop formed between described electrode power terminal and described liner plate is perpendicular to described liner plate.
More preferably, on same described liner plate, described electrode power terminal is positioned on described liner plate center line, described liner plate is provided with at least two igbt chips and at least two FRD chips, the position of described igbt chip on described liner plate is symmetrical about the centerline axis of described liner plate, and/or the position of described FRD chip on described liner plate is symmetrical about the centerline axis of described liner plate.
More preferably, on same described liner plate, described igbt chip and FRD chip are positioned at the same side of described electrode power terminal.
A kind of insulated gate bipolar thyristor module, comprise at least one liner plate, be positioned at least two igbt chips on described liner plate, at least two FRD chips and electrode power terminal, described electrode power terminal adopts the electrode power terminal described in any one of claim 3-5, described first electrode is direct current positive electrode, described second electrode is for exchanging output stage, and described third electrode is direct current negative electrode;
Described modular circuit is half-bridge circuit, and wherein, at least one igbt chip and at least one FRD chip form first brachium pontis, and other at least one igbt chip and other at least one FRD chip form second brachium pontis;
The collector electrode of igbt chip and the negative electrode of FRD chip of composition first brachium pontis described be electrically connecteds with described direct current positive electrode, and described in forming, the emitter of igbt chip of first brachium pontis is electrically connected with the output stage that exchanges of described electrode power terminal with the anode of FRD chip;
The collector electrode of igbt chip of composition second brachium pontis described be electrically connected with the output stage that exchanges of described electrode power terminal with the negative electrode of FRD chip, and the emitter of igbt chip of second brachium pontis described in forming and the anode of FRD chip and described direct current negative electrode are electrically connected;
Wherein, at least one igbt chip and/or at least one FRD chip to its electrical connection described electrode power terminal between current path be the path of near linear, at least one current loop formed between described electrode power terminal and described liner plate is perpendicular to described liner plate.
More preferably, same described liner plate is provided with at least two igbt chips and at least two FRD chips, described electrode power terminal is positioned on described liner plate center line, described igbt chip is positioned at the both sides of described electrode power terminal, and/or described FRD chip is positioned at the both sides of described electrode power terminal.
More preferably, on same described liner plate, described igbt chip and FRD chip are positioned at the same side of described electrode power terminal.
A kind of insulated gate bipolar thyristor module, it is characterized in that, comprise at least one liner plate, be positioned at least two igbt chips on described liner plate, at least two FRD chips and electrode power terminal, described liner plate is also provided with interchange output stage, described electrode power terminal adopts the electrode power terminal described in above-mentioned any one, and described first electrode is direct current positive electrode, and described second electrode is direct current negative electrode;
Described modular circuit is half-bridge circuit, and wherein, at least one igbt chip and at least one FRD chip form first brachium pontis, and other at least one igbt chip and other at least one FRD chip form second brachium pontis;
The described collector electrode of igbt chip of first brachium pontis of composition and the direct current positive electrode of the negative electrode of FRD chip and described electrode power terminal are electrically connected, and the emitter of igbt chip of composition first brachium pontis described is electrically connected with the output stage that exchanges on described liner plate with the anode of FRD chip;
The collector electrode of igbt chip of composition second brachium pontis described is electrically connected with the output stage that exchanges on described liner plate with the negative electrode of FRD chip, and the described emitter of igbt chip of second brachium pontis of composition and the direct current negative electrode of the anode of FRD chip and described electrode power terminal are electrically connected;
Wherein, at least one igbt chip and/or at least one FRD chip to its electrical connection described electrode power terminal between current path be the path of near linear.
More preferably, same described liner plate is provided with at least two igbt chips and at least two FRD chips, described electrode power terminal is positioned on described liner plate center line, the position of described igbt chip on described liner plate is symmetrical about the centerline axis of described liner plate, and/or the position of described FRD chip on described liner plate is symmetrical about the centerline axis of described liner plate.
More preferably, on same described liner plate, described igbt chip and FRD chip are positioned at the same side of described electrode power terminal.
A kind of insulated gate bipolar thyristor module, described modular circuit is three-phase inverter circuitry, and described three-phase inverter circuitry is made up of three half-bridge circuits described in above-mentioned any one.
More preferably, the collector electrode of the igbt chip of first brachium pontis of each described half-bridge circuit and the negative electrode of FRD chip link together, and the emitter of the igbt chip of second brachium pontis of each described half-bridge circuit and the anode of FRD chip link together.
The present invention has following technique effect:
On the one hand, the electrode power terminal that the embodiment of the present invention provides, comprise the first electrode and the second electrode that are made up of a multi-layer sheet, this multi-layer sheet comprises multi-layer electrode plate, and be provided with insulation board between adjacent two layers battery lead plate, at least two-layer the first electrode being realized this electrode power terminal of electrical connection formation by least one first through hole in this multi-layer electrode plate, remaining whole battery lead plate or partial electrode plate form the second electrode of this electrode power terminal.Owing to being provided with insulation board between adjacent electrode plates, so the distance between two electrode layers is the thickness of insulation board, under the required dielectric strength of guarantee, compared to the distance of two electrode power terminals of the prior art, electrode power terminal of the present invention reduces the distance between its two electrode layer, and the reducing of electrode layer spacing is conducive to reducing the stray inductance introduced to module because of power terminal.In addition, owing to realizing electrical connection by the first through hole between multi-layer electrode plate, multi-layer electrode plate can be realized alternately, the relative area of electrode runs parallel can be increased like this, stray inductance can be reduced further.
On the other hand, adopt the electrode power terminal that provides of the embodiment of the present invention, only need fix on liner plate and weld a busbar, lining plate structure can be designed neatly, ordinary power terminal can be eliminated and cannot to interconnect or interconnect the problems such as complexity.And the collector electrode of module, emitter can be integrated on one piece of busbar, simplify frock and technical process.
On the other hand, the insulated gate bipolar thyristor module that the embodiment of the present invention provides, adopt above-mentioned electrode power terminal, the collector electrode of the collector electrode of the igbt chip on its liner plate and the negative electrode of FRD chip and electrode power terminal is electrically connected, the emitter of the emitter of igbt chip and the anode of FRD chip and electrode power terminal is electrically connected, wherein, at least one igbt chip and/or at least one FRD chip to the electrode power terminal of the band through hole of its electrical connection collector electrode between current path be the path of near linear, like this, current path can be shortened as much as possible.Simultaneously, electric current flows into liner plate copper clad layers from the collector electrode leg of electrode power terminal, then chip is flowed through, by metallic bond zygonema and copper clad layers, flow out from the emitter of electrode power terminal, the plane orthogonal at thus formed current loop and described liner plate place, the area that current loop is enclosed is less, is conducive to reducing stray inductance.
Accompanying drawing explanation
In order to more clearly understand the technical scheme of the embodiment of the present invention or prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of conventional electrodes power terminal in prior art;
Fig. 2 is the perspective view of a kind of electrode power terminal of the embodiment of the present invention one;
Fig. 3 is the A direction view of Fig. 2 of the electrode power terminal of the embodiment of the present invention one;
Fig. 4 is the perspective view of the another kind of electrode power terminal of the embodiment of the present invention one;
Fig. 5 is the perspective view of the electrode power terminal of the embodiment of the present invention two;
Fig. 6 (1) is conventional liner plate layout schematic top plan view of the prior art, and Fig. 6 (2) is the current loop schematic diagram of the conventional liner plate layout shown in Fig. 6 (1);
Fig. 7 is the first liner plate schematic layout pattern of the embodiment of the present invention three;
Fig. 8 (1) is the first liner plate current loop schematic diagram of the module of the embodiment of the present invention three;
The first liner plate current loop end view of the module of Fig. 8 (2) embodiment of the present invention three;
Fig. 9 is the second liner plate schematic layout pattern of the embodiment of the present invention three;
Figure 10 is the modular circuit schematic diagram of the embodiment of the present invention three;
Figure 11 is the liner plate schematic layout pattern of the embodiment of the present invention four;
Figure 12 is the electrical block diagram of the embodiment of the present invention four;
Figure 13 is the liner plate schematic layout pattern of the embodiment of the present invention five;
Figure 14 is the liner plate schematic layout pattern of the embodiment of the present invention six;
Figure 15 (1) and Figure 15 (2) is the electrical block diagram of the embodiment of the present invention six.
Accompanying drawing illustrates:
1, substrate, 2, liner plate, 3, sub-copper clad layers, 4, igbt chip, 5, FRD chip, 6, metallic bond zygonema, 7, leg, 8, battery lead plate, 9, insulation board, 801, the collector electrode of existing electrode power terminal, 802, the emitter of existing electrode power terminal, 803, the collector electrode of the multi-layered electrode power terminal with through hole, 804, the emitter of the multi-layered electrode power terminal with through hole, 803c, outside collector electrode and coupling part, portion, 804e, emitter and external connection part, 805, direct current positive electrode, 806, direct current negative electrode, 807, exchange output stage, 9, insulation board, 910, first through hole.
Embodiment
Describe the present invention below with reference to specific embodiment mode shown in the drawings; but these execution modes do not limit the present invention, the structure that those of ordinary skill in the art makes according to these execution modes, method or conversion functionally are all included in protection scope of the present invention.
In addition, may use label or the mark of repetition in various embodiments, these repeat only clearly to describe the present invention in order to simple, do not represent between discussed different embodiment and/or structure and have any relevance.
The invention provides the embodiment of electrode power terminal and insulated gate bipolar thyristor module two aspect based on this power terminal.
First the embodiment of the electrode power terminal of the insulated gate bipolar thyristor module that the embodiment of the present invention provides is introduced.
Embodiment one
As shown in Figures 2 and 3, the electrode power terminal that embodiment one provides is two electrode power terminals of compound, and it comprises, the first electrode 803, second electrode 804, and wherein, the first electrode 803 and the second electrode 804 are made up of a Multilayer Structure.
This Multilayer Structure comprises N(N >=3, and N is natural number) layer battery lead plate 8, and between adjacent two layers battery lead plate 8 between be separated with insulation board 9.In this Multilayer Structure, wherein M(M >=2, M<N, M is natural number) realize electrical connection by least one first through hole 910 between layer battery lead plate, make this M layer battery lead plate form the first electrode 803 of electrode power terminal, and all have insulating barrier to separate between every one deck battery lead plate around this first through hole 910 and in remaining (N-M) layer battery lead plate to realize electric insulation.At least one deck battery lead plate in remaining (N-M) layer battery lead plate forms the second electrode 804 of this electrode power terminal.It should be noted that, described M layer battery lead plate can be mutually adjacent battery lead plate, also can be non-conterminous.Specifically, setting Multilayer Structure be followed successively by a direction the first battery lead plate, the second battery lead plate ..., N electrode plate, so described M layer battery lead plate can comprise the first battery lead plate, the second battery lead plate ..., the M layer battery lead plate such as M battery lead plate, in addition.Described M layer battery lead plate also can comprise the first battery lead plate, third electrode plate ..., M battery lead plate, the M layer battery lead plate such as N electrode plate.
Specifically, one deck battery lead plate can be only had as the second electrode 804 of this electrode power terminal in remaining (N-M) layer battery lead plate.In addition, if have at least two-layer battery lead plate in remaining (N-M) layer battery lead plate, the every one deck battery lead plate being somebody's turn to do (N-M) layer battery lead plate can also realize electrical connection by least one second through hole (not shown), and the entirety that remaining (N-M) layer battery lead plate is formed is as the second electrode 804 of electrode power terminal.It should be noted that, this second through hole all realizes electrode insulation by insulating barrier with the every one deck battery lead plate formed in the M layer battery lead plate of the first electrode 803.
At least two-layer battery lead plate in partial electrode plate in remaining (N-M) layer battery lead plate can certainly be realized electrical connection by the second through hole, it is made to form the second electrode 804 of electrode power terminal, now, this second through hole and the battery lead plate electric insulation except the battery lead plate of formation second electrode 804.
This electrode power terminal also comprises part 803c, the second electrode 804 and the outside part 804e be connected that the first electrode 803 is connected with outside.As one embodiment of the present of invention, as shown in Figure 2 or Figure 3, this first electrode 803 from the Base top contact of Multilayer Structure, and upwards can extend with the outside part 804e be connected with the part 803c that is connected of outside and the second electrode 804.In addition, as shown in Figure 4, the part 803c that this first electrode 803 is connected with outside and the part 804e that the second electrode 804 is connected with outside can also be drawn by the side of Multilayer Structure, and upwards extends.
Under the prerequisite ensureing certain mechanical strength, the part 803c that electrode layer (comprising the first electrode 803 and the second electrode 804) is connected with outside and 804e can be designed to be able to any thickness met the demands.
Further, the first electrode 803 is electrically connected by through hole and its external connection part 803c; Second electrode 804 is electrically connected by through hole and its external connection part 804e.First electrode 803 is insulated by the external connection part 804e of insulating barrier and the second electrode, and the second electrode 804 is insulated by insulating barrier and the first electrode and external connection part 803c.
In order to realize the electrical connection of electrode power terminal and insulated gate bipolar thyristor module, this electrode power terminal also comprises from the first electrode 803 and the outward extending multiple leg 7 of the second electrode 804.In fact, can extend to any direction by outward extending first leg of the first electrode 803 with by outward extending second leg of the second electrode 804, but in order to the convenience be connected with the chip on liner plate, this first leg and the second leg can extend (as shown in Figures 2 and 3) to the both sides of Multilayer Structure, also can extend (as shown in Figure 4) to the same side of Multilayer Structure, further, this first leg and the second leg can form the structure that the center line about Multilayer Structure distributes axisymmetricly respectively.
In the electrode power terminal that the embodiment of the present invention one provides, owing to being provided with insulation board between adjacent electrode plates, so the distance between two battery lead plates is the thickness of insulation board, because the first electrode 803 of electrode power terminal and the second electrode 804 form by battery lead plate, so the distance between the first electrode 803 and the second electrode 804 is the thickness of one deck insulation board 9.Compared to the distance of the electrode power terminal of routine of the prior art, distance between two electrode layers of the electrode power terminal of the embodiment of the present invention is less, spacing between less electrode layer, is conducive to the opposing parallel area of increase two electrode layer, thus makes the mutual inductance M that two electrode layers produce terminallarger, according to formula I terminal=I collect+ I emitter-2M terminalknown, the reduction of the distance between two electrode layers can reduce the stray inductance that electrode power terminal is introduced to module.In addition, owing to realizing electrical connection by through hole between multi-layer electrode plate, multi-layer electrode plate can be realized alternately, so also can increase the relative area of electrode runs parallel, stray inductance can be reduced further.
On the other hand, adopt conventional electrode power terminal, need on liner plate, fix the first electrode and the second electrode respectively, and the electrode power terminal adopting the embodiment of the present invention to provide, only need fix on liner plate and weld a busbar, lining plate structure can be designed neatly, ordinary power terminal can be eliminated and cannot to interconnect or interconnect the problem such as complicated.And, because this electrode power terminal is integrated with two electrode layers, so the collector electrode of insulated gate bipolar thyristor module, emitter can be integrated on one piece of busbar, simplify frock and technical process.
In addition, multi-layered electrode power terminal provided by the invention not only can integrated two electrodes, can also integrated plural electrode.Specifically can see embodiment two.
Embodiment two
As shown in Figure 5, the electrode power terminal that embodiment two provides is integrated with three electrode layers, as shown in the enlarged drawing on the right, is respectively the first electrode 805, second electrode 806 and third electrode 807.The present embodiment and embodiment one have many similarities, and for the sake of brevity, the present embodiment highlights its difference, and the part identical with embodiment one refers to the detailed description of embodiment one.
The difference of the electrode power terminal that the present embodiment provides and the electrode power terminal that embodiment one provides only is that the electrode power terminal of the present embodiment adds a third electrode 807, correspondingly, a third electrode 807 is too increased with the part 807j that is connected of outside with by outward extending 3rd leg of third electrode 807.
Identical with embodiment one, this electrode power terminal comprises N(N >=3, N is natural number) layer battery lead plate, wherein, M(M >=2, M<N, M is natural number) layer battery lead plate realize electrical connection formation first electrode 805 by least one first through hole (not shown in Fig. 5), remaining in the present embodiment (N-M) layer battery lead plate at least comprises two-layer, this remaining (N-M) layer battery lead plate is divided into again Part I and Part II, wherein the battery lead plate of Part I forms the second electrode 806, and the battery lead plate of Part II forms third electrode 807.It should be noted that, each battery lead plate in the battery lead plate of Part I and the battery lead plate of Part II is not done to the restriction on position.
Specifically, when the battery lead plate of Part I at least comprises two-layer battery lead plate, part or all of battery lead plate in the battery lead plate of this Part I can form the second electrode 806, when there being at least two-layer battery lead plate to form the second electrode 806, the battery lead plate forming this second electrode 806 can also realize electrical connection by least one the second through hole.This second through hole and the equal electric insulation of battery lead plate except the battery lead plate of formation second electrode 806.
Equally, if when the formation battery lead plate of third electrode 807 and the battery lead plate of Part II at least comprise two-layer, part or all of battery lead plate in the battery lead plate of this Part II can form third electrode 807, when there being at least two-layer battery lead plate to form third electrode 807, the battery lead plate forming this third electrode 807 can realize electrical connection by least one third through-hole (not shown in Fig. 5).This third through-hole and the equal electric insulation of battery lead plate except forming the battery lead plate of third electrode 807.
That is, when the battery lead plate forming electrode comprises multilayer, the Different electrodes plate of same electrode realizes electrical connection by through hole; Mutually insulated is realized by insulating barrier between Different electrodes plate.
About third electrode 807 and the outside part 807j that connects and substantially identical by position and structural relation and the first electrode 803 in embodiment one and the outside part 803c that is connected of outward extending 3rd leg of third electrode 807 and the first leg or the second electrode 804 and the outside part 804e that is connected and the second leg, those skilled in the art can be known easily according to the conventional techniques means of the detailed description of embodiment one and this area and common practise.For the sake of brevity, be not described in detail at this.
The electrode power terminal that embodiment two provides is integrated with three electrode layers, except there is the beneficial effect of the electrode power terminal described in embodiment one, can also be electrically connected with the electrode of three in insulated gate bipolar thyristor module, when the circuit of insulated gate bipolar thyristor module be half-bridge circuit or three-phase inverter circuitry time, direct current positive electrode wherein, direct current negative electrode and interchange output stage can be integrated on one piece of busbar, simplify frock and technical process.
Based on the electrode power terminal that above-described embodiment one and embodiment two provide, the embodiment of the present invention additionally provides the embodiment of the insulated gate bipolar thyristor module of low stray inductance.In detail see embodiment three to embodiment six.
Embodiment three
First, based on the electrode power terminal that above-described embodiment one and embodiment two provide, embodiments provide the liner plate Layout Embodiment of low stray inductance.
At present, in order to reduce the stray inductance of power semiconductor modular, in insulated gate bipolar thyristor module, the circuit normal arrangement of liner plate is as shown in Fig. 6 (1).For convenience of description, Fig. 6 (1) shows 2 liner plates 2, each liner plate is provided with multiple sub-copper clad layers 3, each liner plate 2 contains the FRD chip 5 of 4 igbt chips 4 and correspondence.Igbt chip 4 and FRD chip 5 are symmetrically distributed in the both sides of electrode power terminal about the center line of liner plate, the collector electrode of igbt chip 4 and the cathode weld of FRD chip 5 in the copper clad layers 3 of liner plate, thus realize being electrically connected with the Power of collector terminal 801 being welded to same sub-copper clad layers 3; The emitter of igbt chip 4 and the anode of FRD chip 5 are connected electrically to another sub-copper clad layers by metallic bond zygonema 6, this sub-copper clad layers is usually located at the zone line of liner plate 2, and its copper clad layers be connected with Power of collector terminal 801 realizes electric insulation by certain gap.Emitter power terminal 802 is welded in this sub-copper clad layers, thus realizes the electrical connection with igbt chip emitter and FRD chip anode.
The liner plate circuit layout of this routine, its advantage is that electrical connection is simple, and the electrode power terminal design matched is easy, and chip layout adopts symmetrical structure, and part reduces the stray inductance of circuit.The liner plate circuit layout of this routine, when general power density, can meet the demands, but the circuit loop of each chip in this liner plate circuit layout is all parallel to backing surface, as shown in Fig. 6 (2).Module chip current loop is caused to enclose area larger.
In addition, for Fig. 6 (1) or 6(2) shown in conventional liner plate, liner plate is welded with 4 igbt chips, 2 FRD chips, liner plate both sides have 2 igbt chips and 1 FRD chip respectively, and both sides are symmetrical.The current loop of igbt chip 401 is L1, and its loop stray inductance is l1, and the current loop of 402 is L2, and its loop stray inductance is l2, and the current loop of 403 is L3, and its loop stray inductance is l3, and the current loop of 404 is L4, and its loop stray inductance is l4.4 igbt chips are in parallel on circuit, then total inductance can simply be expressed as: lIGBT=l1||l2||l3||l4.
Because chip is symmetrical, can think that loop L1 and L2 is symmetrical, L3 and L4 is symmetrical, so, lIGBT ≈ (l2/2) || (l3/2).
In order to overcome the current loop of module chip in prior art enclose the larger defect of area and reduce further the stray inductance brought due to liner plate layout, the electrode power terminal provided based on above-described embodiment the invention provides a kind of new liner plate layout.Composition graphs 7, is described in detail the liner plate layout that the embodiment of the present invention provides.Fig. 7 is the liner plate schematic layout pattern described in embodiment.For convenience of description, Fig. 7 shows 2 liner plates, each liner plate is provided with 4 igbt chip 4(and is respectively 401 ', 402 ', 403 ' and 404 ') and 2 FRD chips 5, each liner plate is also provided with electrode power terminal 80, this electrode power terminal 80 adopts above-described embodiment one or the electrode power terminal described in embodiment two, wherein the first electrode 803 of this electrode power terminal 80 can be collector electrode 803, and the second electrode 804 of this electrode power terminal can be emitter 804.
In order to reduce the stray inductance of insulated gate bipolar thyristor module, electrode power terminal 80 is positioned at the middle part of described liner plate, and as on one bar center line, igbt chip 4 and FRD chip 5 are symmetrically distributed in the both sides of electrode power terminal 80.As shown in Figure 7, igbt chip 401 ' and 403 ' is positioned at the left side of described electrode power terminal 80, and igbt chip 402 ' and 404 ' is positioned at the right side of electrode power terminal 80.For the ease of the electrical connection of electrode power terminal 80 and the igbt chip 4 on liner plate and FRD chip 5, first leg of this electrode power terminal 80 and the second leg extend respectively to the both sides of the Multilayer Structure of electrode power terminal 80, can also distribute axisymmetricly by the center line formed about Multilayer Structure further.
In the present embodiment, 4 igbt chip 4(are respectively 401 ', 402 ', 403 ' and 404 ') collector electrode and the negative electrode of FRD chip 5 and the collector electrode 803 of electrode power terminal 80 be electrically connected, the emitter 804 of the emitter of igbt chip and the anode of FRD chip and electrode power terminal 80 is electrically connected.
Due on same liner plate, usually can be provided with the sub-copper clad layers 3 that several are different, electric insulation between different sub-copper clad layers.For convenience of description, set in the embodiment of the present invention on same liner plate and be provided with N number of sub-copper clad layers, be respectively the first sub-copper clad layers, the second sub-copper clad layers ..., the sub-copper clad layers of N.
The collector electrode 803 of the collector electrode of described igbt chip and the negative electrode of FRD chip and electrode power terminal 80 is electrically connected, can be specially, the collector electrode of described igbt chip and the negative electrode of described FRD chip are connected in the first sub-copper clad layers of described liner plate, described first sub-copper clad layers and described collector electrode 803 are electrically connected (first leg of that is, being drawn by the collector electrode 803 of electrode power terminal is welded in the first sub-copper clad layers).This mode realizing electrical connection, is applicable to the situation that the leg of the collector electrode of the collector electrode of igbt chip and the cathode distance electrode power terminal of FRD chip is nearer.
When both are apart from each other, can with one or more sub-copper clad layers for wire, the collector electrode of igbt chip and the negative electrode of FRD chip and the collector electrode 803 of electrode power terminal are coupled together.Be specifically as follows, the collector electrode of igbt chip and the negative electrode of FRD chip are first connected in the first sub-copper clad layers of liner plate, this first sub-copper clad layers is electrically connected by metallic bond zygonema 6 and at least one second sub-copper clad layers, and one of them second sub-copper clad layers and collector electrode 803 are electrically connected.It should be noted that, in fact the described herein second sub-copper clad layers can comprise a sub-copper clad layers, can also comprise multiple sub-copper clad layers.Connected mode described above also can be understood as: the one or more sub-copper clad layers in the first sub-copper clad layers and the second sub-copper clad layers is coupled together directly or indirectly by metallic bond zygonema, and the collector electrode 803 of at least one the sub-copper clad layers directly or indirectly coupled together by metallic bond zygonema with the first sub-copper clad layers and electrode power terminal is electrically connected.In the mode that this realization is electrically connected, the effect of the second sub-copper clad layers is equivalent to wire, like this, the negative electrode of the collector electrode of igbt chip and FRD chip realizes being electrically connected by the collector electrode of metallic bond zygonema, the first sub-copper clad layers and one or more second sub-copper clad layers and electrode power terminal.
Identical with the mode that the collector electrode 803 of electrode power terminal 80 is electrically connected with the negative electrode of FRD chip with the collector electrode of igbt chip, the mode that the emitter 804 of the emitter of described igbt chip and the anode of FRD chip and electrode power terminal 80 is electrically connected also can comprise following two kinds: the first connected mode is, the emitter of described igbt chip and the anode of FRD chip are connected in the 3rd sub-copper clad layers by metallic bond zygonema 6, and the emitter of described 3rd sub-copper clad layers and electrode power terminal is electrically connected; The second connected mode is, first the emitter of igbt chip is connected with the anode electrical of FRD chip by metallic bond zygonema 6, then be connected with at least one the 3rd sub-copper clad layers by metallic bond zygonema 6, wherein, at least one the 3rd sub-copper clad layers be connected with this metallic bond zygonema and the emitter of electrode power terminal are electrically connected.Be readily appreciated that, in the second connected mode, 3rd sub-copper clad layers also can comprise multiple sub-copper clad layers, and the effect of the 3rd sub-copper clad layers is equivalent to wire, directly or indirectly the emitter of igbt chip and the anode of FRD chip and the emitter of electrode power terminal are realized being electrically connected by the 3rd sub-copper clad layers.
Because the collector electrode 803 of electrode power terminal 80 is sandwich construction, in this sandwich construction, every layer of battery lead plate all can be used as a sub-electrode layer of the collector electrode 803 of electrode power terminal 80, as long as chip is electrically connected with one of them sub-electrode layer, just achieve electrical connection with the collector electrode 803 of electrode power terminal 80.Like this, the sub-electrode layer be positioned near chip on the chip of power terminal both sides and electrode power terminal 80 realizes being electrically connected.So the structure of this electrode power terminal 80 can make electric interconnection more for convenience, ordinary power terminal can be eliminated and cannot to interconnect or interconnect complicated problem, and make designer can design lining plate structure neatly.
In this embodiment, at least one igbt chip and/or at least one FRD chip to the electrode power terminal of its electrical connection electrode layer between current path be the path of near linear, specifically, for igbt chip, the collector electrode of at least one igbt chip is the path of near linear to the current path of the leg of the collector electrode 803 with the electrode power terminal 80 with its electrical connection, or, the emitter of at least one igbt chip is the path of near linear to the current path of the leg of the emitter 804 with its electrical connection, current path can be made so the shortest, be conducive to reducing stray inductance.
Fig. 8 (1) is the liner plate current loop schematic diagram of the module that the present embodiment provides, and arrow represents sense of current.The current loop that electric current is formed between electrode power terminal and liner plate is specially: flow into from the collector electrode 803 of electrode power terminal, through the first leg of different collector electrodes 803, flow through the copper clad layers be connected with collector electrode 803, flow into the collector electrode of corresponding igbt chip equably, go out from the metal bonding linear flow being connected to igbt chip emitter again, flow to the copper clad layers that metallic bond zygonema is electrically connected, the emitter through electrode power terminal flows out.The collector electrode 803 of electrode power terminal is contrary with the sense of current of emitter 804, and the current loop of each chip is all perpendicular to backing surface.
Fig. 8 (2) is the current loop end view on a chip, finds out from Fig. 8 (2), and each current loop is made up of metallic bond zygonema d1 section, the own thickness d of chip 2 sections, copper clad layers d3 section, power terminal d4 section.As can be seen from Fig. 8 (2), the plane orthogonal at the current circuit place of current loop d1 ~ d4 section composition of at least one chip in the insulated gate bipolar thyristor module of the present embodiment is in backing surface.Compared with the liner plate circuit layout (current circuit of formation is parallel to backing surface) of routine, the area that the current circuit of the present embodiment encloses is less, is only the thickness of chip or the height of bonding line, can reduces the stray inductance of module.
If igbt chip is symmetrically distributed in the both sides of electrode power terminal, the current circuit that so each igbt chip is formed is equal, be the height of metallic bond zygonema, if igbt chip emitter surface is bonded with N root metallic bond zygonema, then the stray inductance of each igbt chip be only single bonding line form the 1/N in loop.Such as, the igbt chip in the present embodiment is symmetrically distributed in the both sides of electrode power terminal, and the current circuit of each igbt chip is consistent, is so also conducive to reducing stray inductance.For liner plate in Fig. 7, liner plate is welded with 4 igbt chips, 2 FRD chips, two of electrode power terminal is surveyed 2 igbt chips and 1 FRD chip respectively, and position is symmetrical about the centerline axis of the Multilayer Structure of electrode power terminal.The current loop of igbt chip 401 is L1 ', and its loop stray inductance is l1 ', and the current loop of 402 is L2 ', its loop stray inductance is l2 ', and the current loop of 403 is L3 ', and its loop stray inductance is l3 ', the current loop of 404 is L4 ', and its loop stray inductance is l4 '.4 igbt chips are in parallel on circuit, then total inductance can simply be expressed as:
lIGBT’=l1’||l2’||l3’||l4’；
Liner plate circuit layout of the present invention, can be similar to and think that four current loops are all the same, so
L’IGBT≈l3’/4；
As from the foregoing, the total inductance of this layout equals 1/4 of the stray inductance of each current loop.Compared to the liner plate layout (as Suo Shi Fig. 6 (1)) of routine, the stray inductance that the liner plate layout that the embodiment of the present invention provides produces is less.
Chip layout on liner plate described in above-described embodiment distributes axisymmetricly about the center line of the Multilayer Structure of electrode power terminal, this layout is the preferred version of the present embodiment, in fact, chip on liner plate comprises the both sides that igbt chip and FRD chip can be positioned at electrode power terminal, can also as shown in Figure 9, the chip on same liner plate comprises the same side that igbt chip and FRD chip all can also be positioned at electrode power terminal.
In addition, be readily appreciated that, the embodiment of the present invention does not limit the number of liner plate, igbt chip and FRD chip, as long as insulated gate bipolar thyristor module at least comprises a liner plate, each liner plate is provided with the inventive concept that at least one igbt chip and FRD chip can realize the embodiment of the present invention.
The electrode power terminal provided based on above-described embodiment one and embodiment two and new liner plate Layout Embodiment, the embodiment of the present invention three additionally provides the embodiment of the insulated gate bipolar thyristor module of low stray inductance.The circuit of this insulated gate bipolar thyristor is Single switch circuit, and this circuit diagram as shown in Figure 10.
The circuit structure of the insulated gate bipolar thyristor module described in embodiment three is Single switch circuit structure, and in fact, the circuit structure of insulated gate bipolar thyristor module provided by the invention can also be half-bridge circuit structure.In detail see embodiment four and embodiment five.
Embodiment four
Embodiment four and embodiment three are only that modular circuit structure is different, its liner plate layout and electrode power terminal and the connected mode of the chip on liner plate and the identical of embodiment three.For the sake of brevity, the present embodiment only carries out describing in detail emphatically to its difference.
In conjunction with Figure 11 and Figure 12, embodiment four is described in detail.Figure 11 is the liner plate schematic layout pattern of embodiment four, and Figure 12 is the electrical block diagram of the present embodiment.In half-bridge circuit, there are direct current positive electrode, direct current negative electrode and exchange output stage.So electrode power terminal can adopt compound three electrode power terminal described in above-described embodiment two.Wherein, the first electrode is as direct current positive electrode 805, second electrode as direct current negative electrode 806, and third electrode is as interchange output stage 807.
In this module, at least comprise two igbt chips and at least two FRD chips.Wherein, at least one igbt chip and at least one FRD chip form first brachium pontis, and other at least one igbt chip and at least one FRD chip form second brachium pontis.
In this module, half brachium pontis can realize with a liner plate up and down, also can realize with multiple liner plate.Now realize half-bridge circuit for a liner plate.
Form the collector electrode of the igbt chip of first brachium pontis and the negative electrode of FRD chip and direct current positive electrode 805 to be electrically connected, form the emitter of the igbt chip of first brachium pontis and be electrically connected with the output stage 807 that exchanges of electrode power terminal with the anode of FRD chip;
Form the collector electrode of the igbt chip of second brachium pontis to be electrically connected with the output stage 807 that exchanges of electrode power terminal with the negative electrode of FRD chip, form the emitter of the igbt chip of second brachium pontis and the anode of FRD chip and direct current negative electrode 806 and be electrically connected.
In this module, at least one igbt chip and/or at least one FRD chip to its electrical connection electrode power terminal between current path in the approximate path realized, the current loop between at least one electrode power terminal and liner plate is perpendicular to backing surface.
Similar with the insulated gate bipolar thyristor module described in embodiment three, the position of igbt chip on liner plate can be positioned at the both sides of described electrode power terminal, and/or the position of FRD chip on liner plate is positioned at the both sides of electrode power terminal.Certainly, igbt chip and FRD chip also can be positioned at the same side of electrode power terminal.When igbt chip and/or FRD chip are positioned at the both sides of electrode power terminal, further preferably, igbt chip and/or FRD chip distribute axisymmetricly about the center line of the Multilayer Structure of electrode power terminal.Equally, electrode power terminal can be positioned at the region near centre on liner plate, also can be positioned at the region near an edge on liner plate.
In the present embodiment, to be electrically connected the specific implementation be electrically connected with the collector electrode 803 of the collector electrode of igbt chip and the negative electrode of FRD chip in embodiment three and electrode power terminal substantially identical for the collector electrode of the igbt chip of first brachium pontis and the negative electrode of FRD chip and the direct current positive electrode 805 of electrode power terminal.Be specifically as follows:
The collector electrode of igbt chip and the negative electrode of FRD chip of composition first brachium pontis described are connected in the first sub-copper clad layers, and the direct current positive electrode 805 of described first sub-copper clad layers and electrode power terminal is electrically connected; Or, the collector electrode of igbt chip and the negative electrode of FRD chip of composition first brachium pontis described are connected in the second sub-copper clad layers by metallic bond zygonema, second sub-copper clad layers is electrically connected by metallic bond zygonema and at least one the first sub-copper clad layers, and at least one the first sub-copper clad layers be connected by metallic bond zygonema with the second sub-copper clad layers and described direct current positive electrode 805 are electrically connected.
Based on same design, form the emitter of the igbt chip of first brachium pontis to be electrically connected with the output stage 807 that exchanges of electrode power terminal with the anode of FRD chip, be specifically as follows: the emitter of igbt chip and the anode of FRD chip of composition first brachium pontis described are connected to the 3rd sub-copper clad layers by metallic bond zygonema, and described 3rd sub-copper clad layers is electrically connected with the output stage 807 that exchanges on described electrode power terminal; Or, the emitter of igbt chip and the anode of FRD chip of composition first brachium pontis described are first connected to the 4th sub-copper clad layers by metallic bond zygonema, 4th sub-copper clad layers is electrically connected by metallic bond zygonema and at least one the 3rd sub-copper clad layers, and at least one the 3rd sub-copper clad layers be connected by metallic bond zygonema with the 4th sub-copper clad layers is electrically connected with the output stage 807 that exchanges on described electrode power terminal.
Form the collector electrode of the igbt chip of second brachium pontis to be electrically connected with the output stage that exchanges of electrode power terminal with the negative electrode of FRD chip, be specifically as follows, the collector electrode of igbt chip and the negative electrode of FRD chip of composition second brachium pontis described are connected in the 5th sub-copper clad layers, and described 5th sub-copper clad layers is electrically connected with the output stage 807 that exchanges on described liner plate; Or, the collector electrode of igbt chip and the negative electrode of FRD chip of composition second brachium pontis described are connected to the 6th sub-copper clad layers by metallic bond zygonema, 6th sub-copper clad layers is electrically connected by metallic bond zygonema and at least one the 5th sub-copper clad layers, and at least one the 5th sub-copper clad layers be connected by metallic bond zygonema with the 6th sub-copper clad layers is electrically connected with the output stage 807 that exchanges on described electrode power terminal.
Form the emitter of the igbt chip of second brachium pontis and the anode of FRD chip and direct current negative electrode to be electrically connected, be specifically as follows, the emitter of igbt chip and the anode of FRD chip of composition second brachium pontis described are connected in the 7th sub-copper clad layers by metallic bond zygonema, described 7th sub-copper clad layers and described direct current negative electrode 806 are electrically connected, or, the emitter of igbt chip and the anode of FRD chip of composition second brachium pontis described are first connected to the 8th sub-copper clad layers by metallic bond zygonema, 8th sub-copper clad layers is electrically connected by metallic bond zygonema and at least one the 7th sub-copper clad layers, at least one the 7th sub-copper clad layers be electrically connected with the 8th sub-copper clad layers and described direct current negative electrode 806 are electrically connected.
When the circuit of module is half-bridge circuit, can also be arranged on liner plate by interchange output stage 807, other electrode can adopt the electrode layer on electrode power terminal as direct current positive electrode and direct current negative electrode.In detail see embodiment five.
Embodiment five
In conjunction with Figure 13, the insulated gate bipolar thyristor module described in embodiment five is described in detail.Embodiment five and embodiment four have many similarities, its difference is only that the present embodiment adopts the multi-layered electrode power terminal in embodiment 1, it exchanges output stage 807 and does not integrate with direct current positive electrode 805 and direct current negative electrode 806, but the predetermined sub-copper clad layers of on the liner plate of module one is provided with exchanges output stage 807.This pre-stator copper clad layers is connected with the emitter of the igbt chip of first brachium pontis and the anode electrical of FRD chip by metallic bond zygonema, and the collector electrode of igbt chip and the negative electrode of FRD chip that also pass through metallic bond zygonema or direct and second brachium pontis are electrically connected simultaneously.
It should be noted that, be positioned on liner plate in the present embodiment owing to exchanging output stage, the electric current flowing through module can, around on interchange output stage, make the current loop of insulated gate bipolar thyristor module in the present embodiment not exclusively perpendicular to backing surface.
Based on the insulated gate bipolar thyristor module described in embodiment four and embodiment five, insulated gate bipolar thyristor module provided by the invention can also be three-phase inverter module.This module can be made up of three half-bridge circuits as described in embodiment four or embodiment five.In detail see embodiment six.
Embodiment six
See Figure 14.Three-phase inverter module shown in Figure 14 is that the half-bridge circuit described in embodiment five carries out combining.In fact, the three-phase inverter module that the embodiment of the present invention provides can also combine based on the half-bridge circuit described in embodiment four.The circuit structure of this three-phase inverter module can be specially two kinds of structures.One is that three half-bridge circuits do not couple together, the circuit structure as shown in Figure 15 (1).In this circuit structure, an electrode power terminal connects a liner plate, forms a half-bridge circuit structure.In this circuit structure, comprise three half-bridge circuits, so need three independently electrode power terminals.Another structure is, as shown in Figure 15 (2), the multi-layered electrode power terminal that three half-bridge circuits are corresponding is integrated into a multi-layered electrode power terminal.Particularly, the direct current positive electrode of three half-bridge circuits links together, direct current negative electrode links together, and exchanges output stage and still keep independently state.Same, this embodiment also can adopt the multi-layered electrode power terminal in embodiment 2, and particularly, the direct current positive electrode of three half-bridge circuits links together, direct current negative electrode links together, and exchanges output stage and still keep independently state.
Be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should by specification integrally, technical scheme in each execution mode also through appropriately combined, can form other execution mode that it will be appreciated by those skilled in the art that.
A series of detailed description listed is above only illustrating for feasibility execution mode of the present invention; they are also not used to limit the scope of the invention, all do not depart from the skill of the present invention equivalent implementations done of spirit or change all should be included within protection scope of the present invention.

Claims (16)

1. an electrode power terminal, it is characterized in that, at least comprise, first electrode and the second electrode, described first electrode and described second electrode are made up of a multi-layer sheet, described multi-layer sheet comprises N layer battery lead plate, insulation board is provided with between adjacent two layers battery lead plate, wherein, realize electrical connection by least one first through hole between M layer battery lead plate and form described first electrode, and the first through hole described in each and the equal electric insulation of each battery lead plate except described M layer battery lead plate, at least one deck battery lead plate except described M layer battery lead plate forms described second electrode;
Wherein, M >=2, N >=3, N>M, M, N are natural number.
2. electrode power terminal according to claim 1, it is characterized in that, described battery lead plate except described M layer battery lead plate at least comprises two-layer, described at least one deck battery lead plate except described M layer battery lead plate forms the second electrode of described electrode power terminal, be specially, each battery lead plate except described M layer battery lead plate realizes electrical connection by least one second through hole and forms described second electrode, and the equal electric insulation of each battery lead plate of described second through hole and described M layer battery lead plate.
3. electrode power terminal according to claim 1, it is characterized in that, also comprise third electrode, described battery lead plate except described M layer battery lead plate at least comprises two-layer, described battery lead plate except described M layer battery lead plate comprises Part I and Part II, wherein, the battery lead plate of described Part I forms described second electrode, and the battery lead plate of described Part II forms described third electrode.
4. electrode power terminal according to claim 3, is characterized in that, described Part I at least comprises two-layer battery lead plate, and the battery lead plate of described Part I realizes electrical connection by least one second through hole and forms described second electrode.
5. the electrode power terminal according to claim 3 or 4, is characterized in that, described Part II at least comprises two-layer battery lead plate, and the battery lead plate of described Part II realizes electrical connection by least one third through-hole and forms described third electrode.
6. an insulated gate bipolar thyristor module, it is characterized in that, comprise, at least one liner plate, be positioned at least one igbt chip on described liner plate, at least one FRD chip and electrode power terminal, described electrode power terminal adopts the electrode power terminal described in any one of claim 1-5, and described first electrode is collector electrode, and described second electrode is emitter;
The collector electrode of the collector electrode of described igbt chip and the negative electrode of described FRD chip and described electrode power terminal is electrically connected, and the emitter of the emitter of described igbt chip and the anode of FRD chip and described electrode power terminal is electrically connected;
Wherein, at least one igbt chip and/or at least one FRD chip to its electrical connection described electrode power terminal between current path be the path of near linear, at least one current loop formed between described electrode power terminal and described liner plate is perpendicular to described liner plate.
7. module according to claim 6, it is characterized in that, on same described liner plate, described electrode power terminal is positioned on described liner plate center line, described liner plate is provided with at least two igbt chips and at least two FRD chips, the position of described igbt chip on described liner plate is symmetrical about the centerline axis of described liner plate, and/or the position of described FRD chip on described liner plate is symmetrical about the centerline axis of described liner plate.
8. module according to claim 6, is characterized in that, on same described liner plate, described igbt chip and FRD chip are positioned at the same side of described electrode power terminal.
9. an insulated gate bipolar thyristor module, it is characterized in that, comprise at least one liner plate, be positioned at least two igbt chips on described liner plate, at least two FRD chips and electrode power terminal, described electrode power terminal adopts the electrode power terminal described in any one of claim 3-5, described first electrode is direct current positive electrode, and described second electrode is for exchanging output stage, and described third electrode is direct current negative electrode;
The circuit of described insulated gate bipolar thyristor module is half-bridge circuit, and wherein, at least one igbt chip and at least one FRD chip form first brachium pontis, and other at least one igbt chip and other at least one FRD chip form second brachium pontis;
The collector electrode of igbt chip and the negative electrode of FRD chip of composition first brachium pontis described be electrically connecteds with described direct current positive electrode, and described in forming, the emitter of igbt chip of first brachium pontis is electrically connected with the output stage that exchanges of described electrode power terminal with the anode of FRD chip;
The collector electrode of igbt chip of composition second brachium pontis described be electrically connected with the output stage that exchanges of described electrode power terminal with the negative electrode of FRD chip, and the emitter of igbt chip of second brachium pontis described in forming and the anode of FRD chip and described direct current negative electrode are electrically connected;
Wherein, at least one igbt chip and/or at least one FRD chip to its electrical connection described electrode power terminal between current path be the path of near linear, at least one current loop formed between described electrode power terminal and described liner plate is perpendicular to described liner plate.
10. module according to claim 9, it is characterized in that, same described liner plate is provided with at least two igbt chips and at least two FRD chips, described electrode power terminal is positioned on described liner plate center line, described igbt chip is positioned at the both sides of described electrode power terminal, and/or described FRD chip is positioned at the both sides of described electrode power terminal.
11. modules according to claim 9, is characterized in that, on same described liner plate, described igbt chip and FRD chip are positioned at the same side of described electrode power terminal.
12. 1 kinds of insulated gate bipolar thyristor modules, it is characterized in that, comprise at least one liner plate, be positioned at least two igbt chips on described liner plate, at least two FRD chips and electrode power terminal, described liner plate is also provided with interchange output stage, described electrode power terminal adopts the electrode power terminal described in any one of claim 1-5, and described first electrode is direct current positive electrode, and described second electrode is direct current negative electrode;
The circuit of described insulated gate bipolar thyristor module is half-bridge circuit, and wherein, at least one igbt chip and at least one FRD chip form first brachium pontis, and other at least one igbt chip and other at least one FRD chip form second brachium pontis;
The described collector electrode of igbt chip of first brachium pontis of composition and the direct current positive electrode of the negative electrode of FRD chip and described electrode power terminal are electrically connected, and the emitter of igbt chip of composition first brachium pontis described is electrically connected with the output stage that exchanges on described liner plate with the anode of FRD chip;
The collector electrode of igbt chip of composition second brachium pontis described is electrically connected with the output stage that exchanges on described liner plate with the negative electrode of FRD chip, and the described emitter of igbt chip of second brachium pontis of composition and the direct current negative electrode of the anode of FRD chip and described electrode power terminal are electrically connected;
Wherein, at least one igbt chip and/or at least one FRD chip to its electrical connection described electrode power terminal between current path be the path of near linear.
13. modules according to claim 12, it is characterized in that, same described liner plate is provided with at least two igbt chips and at least two FRD chips, described electrode power terminal is positioned on described liner plate center line, the position of described igbt chip on described liner plate is symmetrical about the centerline axis of described liner plate, and/or the position of described FRD chip on described liner plate is symmetrical about the centerline axis of described liner plate.
14. modules according to claim 12, is characterized in that, on same described liner plate, described igbt chip and FRD chip are positioned at the same side of described electrode power terminal.
15. 1 kinds of insulated gate bipolar thyristor modules, is characterized in that, described modular circuit is three-phase inverter circuitry, and described three-phase inverter circuitry is made up of three half-bridge circuits, and described half-bridge circuit is the half-bridge circuit described in any one of claim 9-14.
16. modules according to claim 15, it is characterized in that, the collector electrode of the igbt chip of first brachium pontis of each described half-bridge circuit and the negative electrode of FRD chip link together, and the emitter of the igbt chip of second brachium pontis of each described half-bridge circuit and the anode of FRD chip link together.
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