CN107818960B - A kind of power semiconductor modular for track vehicle - Google Patents
A kind of power semiconductor modular for track vehicle Download PDFInfo
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- CN107818960B CN107818960B CN201611064056.9A CN201611064056A CN107818960B CN 107818960 B CN107818960 B CN 107818960B CN 201611064056 A CN201611064056 A CN 201611064056A CN 107818960 B CN107818960 B CN 107818960B
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- liner plate
- radiator
- power semiconductor
- layer
- plate unit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Inverter Devices (AREA)
Abstract
The invention proposes a kind of power semiconductor modulars for track vehicle, the power semiconductor modular includes the liner plate unit of radiator and setting on a heat sink, radiator has the heat-eliminating medium entrance being connected to the inner cavity of radiator and heat-eliminating medium outlet, the power semiconductor chip that liner plate unit has liner plate and is fixed on liner plate, wherein, liner plate contact is arranged on a surface of a heat sink, by the way that liner plate is set up directly on the surface of radiator, reduce the thermal resistance between power semiconductor chip and radiator, improve the radiating efficiency of the power semiconductor modular, simultaneously, facilitate the volume and weight of reduction power module.
Description
Technical field
The present invention relates to power electronics fields, and in particular to a kind of power semiconductor mould for track vehicle
Block.
Background technique
Power semiconductor is widely used in field of track traffic, but standard-package power semiconductor devices only has out
The function of pipe is closed, and integrated level is not high.As the unsteady flow module of one of current transformer core component, then by standard-package power half
Conductor device, radiator, low-inductance bus, gate driver and structural member etc. constitute, due to by structural form, device layout and
The limitation of device function, power density, intelligence and it is convenient in terms of there is also many incomplete places.
Summary of the invention
For some or all of of the above-mentioned technical problem in the presence of the prior art, the invention proposes one kind to be used for
The power semiconductor modular of track vehicle.The power semiconductor modular integrated level is high, and good heat dissipation effect.
According to an aspect of the invention, it is proposed that a kind of power semiconductor modular for track vehicle, comprising:
Radiator, radiator have the heat-eliminating medium entrance being connected to the inner cavity of radiator and heat-eliminating medium outlet,
Liner plate unit on a heat sink is set, and liner plate unit has liner plate and the power being fixed on liner plate half
Conductor chip,
Wherein, liner plate contact is arranged on a surface of a heat sink.
In one embodiment, liner plate unit is arranged in the first side of radiator, is arranged in the top of liner plate unit
Low-inductance bus, and power terminal is set between low-inductance bus and liner plate unit.
In one embodiment, low-inductance bus includes direct current positive layer, direct current negative layer, exchange layer, and is arranged in adjacent
Insulating layer between layer and on outermost layer, and direct current positive layer and direct current negative layer are connect to first end extension with forming plug-in
Head.
In one embodiment, power terminal include power terminal main body, be arranged in power terminal main body for it is low
The upper pin of inductance bus contact connection and it is arranged in and is used to connect down and draw with liner plate unit contact in power terminal main body
Foot.
In one embodiment, upper pin structure is the excrescence projected upwards by power terminal main body, is set on excrescence
It is equipped with step, the free end on the step of excrescence can be inserted into the connecting hole being arranged on low-inductance bus.
In one embodiment, and in the first side of radiator housing unit is arranged to accommodate to be formed with radiator
Chamber, and partition is set in accommodating chamber, accommodating chamber is divided into the first accommodating chamber and the second accommodating chamber, it is arranged in the first accommodating chamber
Control circuit board, liner plate unit, low-inductance bus and power terminal are arranged in the second accommodating chamber, and control circuit board is configured to
It is connect with liner plate cell signal.
In one embodiment, contact pin is set on the conductive layer of liner plate, and contact pin passes through partition and connect with control circuit board.
In one embodiment, exchange layer extends to second end to form exchange interface, and in exchange interface selectivity
The current sensor connecting with control circuit partitioned signal is set.
It in one embodiment, further include the temperature sensor being connect with control circuit partitioned signal, temperature sensor can be set
It sets on liner plate unit.
In one embodiment, guide pin is set in the first end face of radiator, and/or in the third end face of radiator
Guide groove is set on the 4th end face corresponding with third end face.
In one embodiment, liner plate unit is in matrix form distribution on a heat sink.
According to another aspect of the invention, it is proposed that a kind of power semiconductor modular for track vehicle, comprising:
Rectangular radiator, radiator have the heat-eliminating medium entrance being connected to the inner cavity of radiator and heat-eliminating medium outlet,
Liner plate unit in the first side of radiator is set, and liner plate unit has liner plate and is fixed at liner plate
On power semiconductor chip, wherein liner plate contact is arranged in the first side of radiator,
The low-inductance bus of the top of liner plate unit is set, low-inductance bus includes direct current positive layer, direct current negative layer, exchanges layer,
And the insulating layer between adjacent layer and on outermost layer is set, and direct current positive layer and direct current negative layer are prolonged to first end
It stretches to form plug-in connector, exchange layer extends to form exchange interface to second end, and is selectively arranged in exchange interface
The current sensor being connect with control circuit partitioned signal,
Power terminal between low-inductance bus and liner plate unit is set,
Housing unit in the first side of radiator is set, and housing unit and radiator form accommodating chamber, and are holding
Accommodating chamber is divided into the first accommodating chamber and the second accommodating chamber by intracavitary setting partition of receiving, and control circuit is arranged in the first accommodating chamber
Plate, liner plate unit, low-inductance bus and power terminal are arranged in the second accommodating chamber, and control circuit board is configured to and liner plate list
First signal connection,
Contact pin on the conductive layer of liner plate is set, contact pin passes through partition and connect with control circuit board,
The temperature sensor connecting with control circuit partitioned signal, temperature sensor can be arranged on liner plate unit.
Compared with the prior art, the advantages of the present invention are as follows, by the way that liner plate contact is arranged on a surface of a heat sink,
The thermal resistance between power semiconductor chip and radiator is reduced, the radiating efficiency of the power semiconductor modular is improved.Meanwhile
Above-mentioned set-up mode helps to reduce the volume and weight of power module.
Detailed description of the invention
The preferred embodiment of the present invention is described in detail below in conjunction with attached drawing, in figure:
Fig. 1 shows the explosive view of power semiconductor modular according to the present invention；
Fig. 2 shows the perspective view of power semiconductor modular according to the present invention；
Fig. 3 shows the A-A sectional view from Fig. 2；
In the accompanying drawings, identical component uses identical appended drawing reference, and the attached drawing is not drawn according to the actual ratio.
Specific embodiment
Below in conjunction with attached drawing, the present invention will be further described.
Fig. 1 shows the explosive view of power semiconductor modular 100 according to the present invention.As shown in Figure 1, power semiconductor mould
Block 100 includes radiator 1 and liner plate unit 2.Wherein, liner plate unit 2 has liner plate 21 and is fixed on liner plate 21
Power semiconductor chip 22.And the liner plate 21 of liner plate unit 2 is set up directly on the surface of radiator 1.
The liner plate 21 of the power semiconductor modular 100 is set up directly on radiator 1, and avoids using standard-package power
The substrate of semiconductor devices.Thermal resistance is advantageously reduced by this set, meanwhile, this arrangement makes power semiconductor mould
The more compact structure of block 100 facilitates the volume and weight for reducing power semiconductor modular 100.
Preferably, radiator 1 is it is so structured that rectangular.Liner plate 21 can be directly anchored to radiator by the way of welding
In 1 first side.And power semiconductor chip 22 can also be arranged on liner plate 21 by welding.This connection structure letter
It is single, and in the heat transfer for preferably generating power semiconductor chip 22 to radiator 1.It should be noted that radiator 1 is simultaneously
Be not limited to it is rectangular, for example, other arbitrary shapes can be designed as according to specific space requirement.And it should be noted that liner plate 21
It can be set on any surface of radiator 1, and in this application, radiator 1 is arranged in liner plate 21 as shown in Figure 1
It is illustrated on upper surface, and in order to express easily, is provided with the surface of liner plate 21 i.e. the radiator 1 in Fig. 1
Upper surface be known as " first side ".
Preferably, liner plate unit 2 is distributed on radiator 1 in matrix form.Make liner plate unit 2 close in this way
Arrangement optimizes the structure of power semiconductor modular 100, helps to reduce the volume of power semiconductor modular 100 and improves its function
Rate density.
In one embodiment, low-inductance bus 3 is set in the top of liner plate unit 2.And in low-inductance bus 3 and liner plate list
Power terminal 4 is set between member 2.The electricity between liner plate unit 2, power terminal 4 and low-inductance bus 3 is realized by above-mentioned setting
It can transmission.
Low-inductance bus 3 is board-like laminated construction.Specifically, low-inductance bus 3 include direct current positive layer (not shown), it is straight
Stream and exchange layer (not shown) at negative layer (not shown), and setting is insulated between adjacent layer and on outermost layer
Layer (not shown).Structural relation between direct current positive layer, direct current negative layer and the exchange each layer of layer can be according to the actual situation
And it selects.It is, the application does not limit direct current positive layer, direct current negative layer and the overlying relation for exchanging layer.And there is this
The low-inductance bus 3 of kind structure helps to realize ultra-thin low sense mutual contact mode, can obtain good low inductance and insulation performance, together
When can reduce the height of low-inductance bus 3, to reduce the volume of power semiconductor modular 100.
Direct current positive layer and direct current negative layer extend to first end to form plug-in connector 31." first end " described herein
It is merely meant that one end that direct current positive layer and direct current negative layer extend, consistent with left end in Fig. 1.Plug-in connector 31 includes by straight
The stream positive layer straight polarity direct current mouth 32 extended, the negative interface 33 of direct current that is extended by direct current negative layer and it is arranged in straight polarity direct current mouth 32
With the insulating part 34 between the negative interface 33 of direct current, as shown in Figure 3.As shown in Figure 1, straight polarity direct current mouth 32 and the negative interface 33 of direct current are
Spaced two elastic slices of relative type motor.Power semiconductor modular can be smoothly realized by this set plug-in connector 31
100 connect with the quick plug-in of system.
Exchange layer extends to second end to form exchange interface 35.Shown in " second end " described herein and Fig. 1
Right end is consistent, that is, opposite with " first end ".Preferably, exchange interface 35 can be structured as elastic slice shape, and be arranged above
There is aperture 36, is connect with facilitating with external circuit.Selectively, current sensor 5, this current sense are set at exchange interface 35
What device 5 can be connect with 6 signal of control circuit board.In the case where being provided with current sensor 5, can be connect by being arranged and exchanging
The switching copper bars 37 of 35 connection of mouth, and realize and connect with external circuit.Switching copper bar 37 is configured to by the second end of current sensor 5
Sheet outstanding.
In one embodiment, power terminal 4 includes the power terminal main body 43 for being configured to strip.Also, power terminal
Upper pin 41 is set on 43, for connecting with low-inductance bus 3, to realize that electric energy transmits.Preferably, upper pin 41 can be structured as
The excrescence projected upwards by power terminal main body 43 is provided with step 44 on excrescence, so that the free end of upper pin 41
Area of section be less than upper pin 41 fixing end area of section.In an assembling process, close to 41 energy of upper pin of free end
It is inserted into the connecting hole 38 being arranged on low-inductance bus 3, meanwhile, low-inductance bus 3 is overlapped at step.In addition, power terminal 4
It is connect by welding with low-inductance bus 3.By this setup, on the one hand can be convenient power terminal main body 43 with
The installation of low-inductance bus 3 cooperates, and on the other hand, this connection relationship is more closely stablized.Certainly, the application does not limit and draws
The connection relationship of foot 41 and low-inductance bus 3.For example, it is also possible to pass through the connection types such as riveting, grafting or bolt for upper pin
41 are fixed together with low-inductance bus 3.In addition, power terminal 4 can also be processed with the whole manufacture of low-inductance bus 3.Power terminal 4
With lower pin 42, for being connect with the conductive layer of liner plate unit 2, to realize that the electric energy of liner plate unit 2 and power terminal 4 passes
It is defeated.For example, lower pin 42 can be welded on the conductive layer of liner plate unit.Lower pin 42 is it is so structured that the knot with bending
Structure, that is, the lower pin 42 being bent extend to the side of power terminal main body 43 with the conductive layer contact with liner plate unit 2.
Power semiconductor modular 100 further includes having control circuit board 6.Control circuit board 6 is connect with 2 signal of liner plate unit,
With intelligentized control methods functions such as driving, monitoring, protection and the diagnosis of realizing control circuit board 6.Preferably, in control circuit board 6
Second end be arranged power interface 61, for for control circuit board 6 supply low-voltage.It is arranged in the second end of control circuit board 6
There is optical fiber interface 62, to realize the communication of control circuit board 6 Yu top level control unit.It is also set in the second end of control circuit board 6
It is equipped with current sensor interface 63, to realize the connection of control circuit board 6 Yu current sensor 5.It can guarantee by above-mentioned setting
The normal work of control circuit board 6, and be conducive to signal transmission, reduce interference.In addition, above-mentioned set-up mode facilitates power
The optimization layout of semiconductor module 100, generalization degree are high.
In order to guarantee the normal work of power semiconductor modular 100, the interference between different components is avoided, power is partly led
Module 100 further includes housing unit 7.Housing unit 7, which is arranged in the first side of radiator 1 and is formed with radiator 1, to be held
Receive chamber 71.And partition 72 is set in accommodating chamber 71, accommodating chamber 71 is divided for the first accommodating chamber 73 and the second accommodating chamber 74.Its
In in the first accommodating chamber be arranged control circuit board 6.And liner plate unit 2, low-inductance bus 3 and the setting of power terminal 4 are held second
It receives in chamber 74.It is provided with by above-mentioned conducive to the signal isolation between each component, reduces and interfere with each other.Meanwhile passing through setting
Housing unit 7 optimizes the overall structure of power semiconductor modular 100, and it is high, small in size, light-weight etc. excellent to make it have integrated level
Point.And in order to manufacture conveniently, housing unit 7 is it is so structured that split type structure, for example, housing unit 7 may include the
One shell 75 and second shell 76.First shell 75 is frame like structure, and is fastened on radiator 1.It is set at the upper opening of first shell 75
Partition 72 is set to form the second accommodating chamber 74.And second shell 76 is configured to box structure, opening is towards partition 72 and fixation is set
It sets in first shell 75, wherein second shell 76 and partition 72 form the first accommodating chamber 73.
It should be noted that contact pin 23 is arranged on the conductive layer of liner plate 21.Contact pin 23 passes through partition 72 and control circuit
Plate 6 connects, to realize that the signal of control circuit board 6 and liner plate unit 2 transmits.It should be noted that the setting position of contact pin 23
It is possible that interfere with low-inductance bus 3 or do not interfere, and when contact pin 23 and 3 location conflicts of low-inductance bus, it can be female in low sense
The hole that setting is passed through for contact pin 23 on row 3.
And in order to optimize the structure of power semiconductor modular 100, facilitate the setting of the components such as contact pin 23, can also be arranged auxiliary
Help liner plate 21 '.The auxiliary liner plate 21 ' is electrically connected with liner plate 21.For example, in Fig. 1, in order to optimize the installation position of contact pin 23,
The outside of liner plate 21 is provided with auxiliary liner plate 21 '.
Insulating materials can be injected in the second accommodating chamber 74, by liner plate unit 2, low-inductance bus 3, power terminal 4 and inserted
Needle 23 etc. is packaged in inside it.For example, insulating materials can be silica gel, silicon rubber or epoxy material etc..Pass through this set energy
Guarantee that stablizing for power semiconductor modular 100 works normally, prolongs the service life.
In one embodiment, guide pin 11 is set in the first end face of radiator 1.In installation power semiconductor module
During 100, guide pin 11 is used for as the guiding of power semiconductor modular 100 and fine positioning.During the installation process, guide pin 11
Also act the effect of cushion impact forces.In addition, the guide pin 11 also acts as after power semiconductor modular 100 is installed in place
The effect of constant power semiconductor module 100.Preferably, two guide pins 11 can be set in the first end face of radiator 1,
And two guide pins 11 are arranged at two angles of the same side of rectangular radiator 1.
For the ease of installation positioning, set on the third end face and the 4th end face corresponding with third end face of radiator 1
Set guide groove 12." the third surface " is consistent with front surface drawn in Fig. 1.In installation power semiconductor module 100
In the process, which can be used for the first guiding and just positioning of power semiconductor modular 100.Pass through above-mentioned setting as a result,
Installation is facilitated, operating cost is reduced.And guide groove 12 is used cooperatively with guide pin 11, further improves the power half
The installation convenience of conductor module 100.
Heat-eliminating medium entrance 13 and the heat-eliminating medium outlet 14 of radiator 1 is arranged at the second end of radiator 1.Radiator 1 can
Gas cooling can also be used using liquid cooling.Meanwhile at least two screw threads are set in the second end face of radiator 1
Hole, to facilitate power semiconductor modular 100 to be connected and fixed in extraneous.
In order to carry out the acquisition of temperature signal, it is optionally provided with temperature sensor on liner plate unit 2, specific peace
Holding position is set according to the practical heat condition of power semiconductor chip 22, and control circuit board 6 is by contact pin 23 to above-mentioned
Temperature signal is acquired, for the intelligentized control methods such as driving, monitoring, protect and diagnose.
According to actual needs, current sensor can be set in control circuit board 6, and control circuit board 6 can be by above-mentioned
Current sensor carry out current signal acquisition, for the intelligentized control methods such as driving, monitoring, protecting and diagnosing.
In addition, the internal power semiconductor chip 22 measured with current measurement and temperature can be selected, to realize chip-scale
Fast and accurately monitoring, control circuit board 6 is acquired above-mentioned signal by contact pin, for driving, monitor, protect and
The intelligentized control methods such as diagnosis.
The above is only the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, any this field
Technical staff in technical scope disclosed by the invention, can be easy to carry out and be altered or varied, and this be altered or varied all
It is covered by the protection scope of the present invention.Therefore, protection scope of the present invention should be with the protection scope of claims
It is quasi-.
Claims (11)
1. a kind of power semiconductor modular for track vehicle characterized by comprising
Radiator, the radiator have the heat-eliminating medium entrance being connected to the inner cavity of the radiator and heat-eliminating medium outlet,
Liner plate unit on the radiator is set, and the liner plate unit has liner plate and is fixed on the liner plate
Power semiconductor chip,
Wherein, the liner plate contact is arranged on the surface of the radiator,
Low-inductance bus is set in the top of the liner plate unit, and is arranged between the low-inductance bus and the liner plate unit
Power terminal,
The power terminal includes power terminal main body, is arranged in the power terminal main body for connecing with the low-inductance bus
The upper pin of touch connection,
The upper pin structure is the excrescence projected upwards by the power terminal main body, is provided with platform on the excrescence
Rank, the free end on the step of the excrescence can be inserted into the connecting hole being arranged on the low-inductance bus.
2. power semiconductor modular according to claim 1, which is characterized in that the liner plate unit is arranged in the heat dissipation
In the first side of device.
3. power semiconductor modular according to claim 2, which is characterized in that the low-inductance bus include direct current positive layer,
Direct current negative layer, exchange layer, and be arranged between adjacent layer and outermost layer on insulating layer, and direct current positive layer and straight
Negative layer is flowed to extend to first end to form plug-in connector.
4. power semiconductor modular according to claim 3, which is characterized in that the power terminal further includes being arranged in institute
State the lower pin in power terminal main body for connecting with the liner plate unit contact.
5. power semiconductor modular according to claim 3, which is characterized in that and in the first side of the radiator
Housing unit is set to form accommodating chamber with the radiator, and partition is set in the accommodating chamber and is divided into the accommodating chamber
Control circuit board, the liner plate unit, the low sense is arranged in first accommodating chamber and the second accommodating chamber in first accommodating chamber
Busbar and the power terminal are arranged in the second accommodating chamber, and the control circuit board is configured to believe with the liner plate unit
Number connection.
6. power semiconductor modular according to claim 5, which is characterized in that be arranged on the conductive layer of the liner plate and insert
Needle, the contact pin pass through the partition and connect with the control circuit board.
7. power semiconductor modular according to claim 5, which is characterized in that the exchange layer extends to second end with shape
Conclusion of the business stream interface, and the current sensor connecting with the control circuit partitioned signal is selectively set in the exchange interface.
8. power semiconductor modular according to claim 5, which is characterized in that further include and the control circuit partitioned signal
The temperature sensor of connection, the temperature sensor can be arranged on the liner plate unit.
9. power semiconductor modular according to claim 1, which is characterized in that set in the first end face of the radiator
Guide pin is set, and/or guide groove is set on the third end face and the 4th end face corresponding with third end face of the radiator.
10. according to claim 1 to power semiconductor modular described in any one of 9, which is characterized in that the liner plate unit exists
It is distributed on the radiator in matrix form.
11. a kind of power semiconductor modular for track vehicle characterized by comprising
There is the heat-eliminating medium entrance being connected to the inner cavity of the radiator and heat-eliminating medium to go out for rectangular radiator, the radiator
Mouthful,
Liner plate unit in the first side of the radiator is set, and the liner plate unit has liner plate and is fixed at
Power semiconductor chip on the liner plate, wherein the liner plate contact is arranged in the first side of the radiator,
The low-inductance bus of the top of the liner plate unit is set, and the low-inductance bus includes direct current positive layer, direct current negative layer, exchange
Layer, and be arranged between adjacent layer and outermost layer on insulating layer, and direct current positive layer and direct current negative layer are to first
End extends to form plug-in connector, and the exchange layer extends to second end to form exchange interface,
Power terminal between the low-inductance bus and the liner plate unit is set,
Housing unit in the first side of the radiator is set, and the housing unit and the radiator, which are formed, to be accommodated
Chamber, and partition is set in the accommodating chamber, the accommodating chamber is divided into the first accommodating chamber and the second accommodating chamber, described first
Control circuit board is set in accommodating chamber, and the liner plate unit, the low-inductance bus and power terminal setting are accommodated second
In chamber, and the control circuit board is configured to connect with the liner plate cell signal, and in the exchange interface selectivity
The current sensor connecting with the control circuit partitioned signal is set,
Contact pin on the conductive layer of the liner plate is set, the contact pin passes through the partition and connect with the control circuit board,
The liner plate unit can be arranged in the temperature sensor connecting with the control circuit partitioned signal, the temperature sensor
On.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610823191 | 2016-09-14 | ||
| CN2016108231910 | 2016-09-14 |
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| Publication Number | Publication Date |
|---|---|
| CN107818960A CN107818960A (en) | 2018-03-20 |
| CN107818960B true CN107818960B (en) | 2019-11-29 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611064056.9A Active CN107818960B (en) | 2016-09-14 | 2016-11-28 | A kind of power semiconductor modular for track vehicle |
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| CN104796010A (en) * | 2015-04-29 | 2015-07-22 | 永济新时速电机电器有限责任公司 | Large-capacity inverter chopper power unit |
| CN205430072U (en) * | 2016-03-17 | 2016-08-03 | 中车株洲电力机车研究所有限公司 | Converter power module |
| CN105914205A (en) * | 2016-05-09 | 2016-08-31 | 株洲中车时代电气股份有限公司 | Power module structure and manufacture method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103545282A (en) * | 2013-11-05 | 2014-01-29 | 株洲南车时代电气股份有限公司 | Insulated gate bipolar thyristor module and electrode power terminal |
| CN104779816A (en) * | 2015-04-07 | 2015-07-15 | 南车株洲电力机车研究所有限公司 | Frequency-conversion power device for cutting motor of heading machine |
| CN104796010A (en) * | 2015-04-29 | 2015-07-22 | 永济新时速电机电器有限责任公司 | Large-capacity inverter chopper power unit |
| CN205430072U (en) * | 2016-03-17 | 2016-08-03 | 中车株洲电力机车研究所有限公司 | Converter power module |
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| Publication number | Publication date |
|---|---|
| CN107818960A (en) | 2018-03-20 |
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