CN103534780B - 离子能量分析仪、在该离子能量分析仪中发电信号的方法及制造和操作该离子能量分析仪的方法 - Google Patents

离子能量分析仪、在该离子能量分析仪中发电信号的方法及制造和操作该离子能量分析仪的方法 Download PDF

Info

Publication number
CN103534780B
CN103534780B CN201280023721.3A CN201280023721A CN103534780B CN 103534780 B CN103534780 B CN 103534780B CN 201280023721 A CN201280023721 A CN 201280023721A CN 103534780 B CN103534780 B CN 103534780B
Authority
CN
China
Prior art keywords
aperture plate
ion
grid
plasma
iea
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201280023721.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN103534780A (zh
Inventor
陈立
巴顿·莱恩
麦里特·法克
赵建平
拉达·孙达拉扬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN103534780A publication Critical patent/CN103534780A/zh
Application granted granted Critical
Publication of CN103534780B publication Critical patent/CN103534780B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/02—Details
    • H01J49/04—Arrangements for introducing or extracting samples to be analysed, e.g. vacuum locks; Arrangements for external adjustment of electron- or ion-optical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J49/00—Particle spectrometers or separator tubes
    • H01J49/44—Energy spectrometers, e.g. alpha-, beta-spectrometers
    • H01J49/46—Static spectrometers
    • H01J49/48—Static spectrometers using electrostatic analysers, e.g. cylindrical sector, Wien filter
    • H01J49/488—Static spectrometers using electrostatic analysers, e.g. cylindrical sector, Wien filter with retarding grids
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
    • H05H1/0081—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature by electric means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
CN201280023721.3A 2011-03-28 2012-03-28 离子能量分析仪、在该离子能量分析仪中发电信号的方法及制造和操作该离子能量分析仪的方法 Expired - Fee Related CN103534780B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161468187P 2011-03-28 2011-03-28
US61/468,187 2011-03-28
PCT/US2012/030960 WO2012135351A2 (en) 2011-03-28 2012-03-28 Ion energy analyzer, methods of electrical signaling therein, and methods of manufacturing and operating the same

Publications (2)

Publication Number Publication Date
CN103534780A CN103534780A (zh) 2014-01-22
CN103534780B true CN103534780B (zh) 2016-07-06

Family

ID=46925972

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280023721.3A Expired - Fee Related CN103534780B (zh) 2011-03-28 2012-03-28 离子能量分析仪、在该离子能量分析仪中发电信号的方法及制造和操作该离子能量分析仪的方法

Country Status (6)

Country Link
US (3) US9087677B2 (cg-RX-API-DMAC7.html)
JP (1) JP6023787B2 (cg-RX-API-DMAC7.html)
KR (1) KR101967490B1 (cg-RX-API-DMAC7.html)
CN (1) CN103534780B (cg-RX-API-DMAC7.html)
TW (1) TWI505318B (cg-RX-API-DMAC7.html)
WO (1) WO2012135351A2 (cg-RX-API-DMAC7.html)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI485024B (zh) * 2013-01-15 2015-05-21 Univ Nat Yunlin Sci & Tech Laser processing device with auxiliary plate
TWI493194B (zh) * 2013-07-15 2015-07-21 Mpi Corp Probe module with feedback test function
US9500675B2 (en) 2013-07-15 2016-11-22 Mpi Corporation Probe module supporting loopback test
CN104422478B (zh) * 2013-08-23 2017-05-17 中国科学院空间科学与应用研究中心 一种超高速撞击中瞬态等离子体参数测量的方法
US20180218895A1 (en) * 2013-12-31 2018-08-02 DH Technologies Development Pte Ltd. Method for Removing Trapped Ions from a Multipole Device
CN105607107B (zh) * 2014-11-21 2018-05-04 中国科学院空间科学与应用研究中心 一种利用栅网调控的空间能量粒子的多方向探测装置
US9595424B2 (en) 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
US10553411B2 (en) * 2015-09-10 2020-02-04 Taiwan Semiconductor Manufacturing Co., Ltd. Ion collector for use in plasma systems
US9761414B2 (en) 2015-10-08 2017-09-12 Lam Research Corporation Uniformity control circuit for use within an impedance matching circuit
DE102016204679B4 (de) * 2016-03-22 2019-03-21 Airbus Defence and Space GmbH Ionensensor
US10026592B2 (en) 2016-07-01 2018-07-17 Lam Research Corporation Systems and methods for tailoring ion energy distribution function by odd harmonic mixing
KR102543349B1 (ko) * 2016-07-11 2023-06-30 삼성전자주식회사 플라즈마 모니터링 장치
US20180122670A1 (en) * 2016-11-01 2018-05-03 Varian Semiconductor Equipment Associates, Inc. Removable substrate plane structure ring
KR20190014623A (ko) * 2017-08-03 2019-02-13 삼성전자주식회사 플라즈마 공정 장치 및 이를 이용한 반도체 장치 제조 방법
CN108022824A (zh) * 2017-11-21 2018-05-11 中国科学技术大学 高精度离子能量分析仪
US11153960B1 (en) * 2018-06-08 2021-10-19 Innoveering, LLC Plasma-based electro-optical sensing and methods
JP7202972B2 (ja) 2018-06-29 2023-01-12 東京エレクトロン株式会社 プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム
WO2020004091A1 (ja) 2018-06-29 2020-01-02 東京エレクトロン株式会社 プラズマ処理装置、プラズマ状態検出方法およびプラズマ状態検出プログラム
WO2021089127A1 (de) * 2019-11-05 2021-05-14 Ev Group E. Thallner Gmbh Verfahren zur herstellung einer analysevorrichtung
EP3968353A1 (en) 2020-09-10 2022-03-16 Impedans Ltd Apparatus for ion energy analysis of plasma processes
US11264212B1 (en) 2020-09-29 2022-03-01 Tokyo Electron Limited Ion angle detector
CN112696329B (zh) * 2020-12-14 2022-06-10 兰州空间技术物理研究所 一种离子推力器栅极绝缘连接结构及装配方法
KR20250033239A (ko) * 2022-06-30 2025-03-07 도쿄엘렉트론가부시키가이샤 조정 방법 및 플라즈마 처리 장치
EP4625471A3 (en) * 2022-11-25 2025-12-31 Applied Materials, Inc. ARMORED APPARATUS FOR THE ANALYSIS OF THE IONIC ENERGY OF PLASMA PROCESSES
US12555756B2 (en) 2023-10-19 2026-02-17 Tokyo Electron Limited System and method to measure ion properties in a plasma system
WO2025159420A1 (ko) * 2024-01-25 2025-07-31 (주)아이씨디 플라즈마에서 대상물의 전위 제어 장치 및 그 전위 제어 방법
US20260074174A1 (en) * 2024-09-06 2026-03-12 Applied Materials, Inc. Retarding field energy analyzer with magnetic filter
CN119381231B (zh) * 2024-09-27 2025-10-28 北京航天控制仪器研究所 一种离子能量筛选装置及方法
CN119936953A (zh) * 2025-01-21 2025-05-06 北京东方计量测试研究所 用于原位测量离子能量和通量的装置
CN120468911B (zh) * 2025-03-07 2025-11-04 中国科学院国家空间科学中心 一种自适应低能粒子探测系统

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652427A (en) * 1994-02-28 1997-07-29 Analytica Of Branford Multipole ion guide for mass spectrometry
CN101401187A (zh) * 2006-03-10 2009-04-01 瓦里安半导体设备公司 监测和控制等离子体制造工艺的技术
US20090242791A1 (en) * 2008-03-31 2009-10-01 Tokyo Electron Limited Two-grid ion energy analyzer and methods of manufacturing and operating

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4578589A (en) 1983-08-15 1986-03-25 Applied Materials, Inc. Apparatus and methods for ion implantation
JPS60126832A (ja) 1983-12-14 1985-07-06 Hitachi Ltd ドライエツチング方法および装置
US5347905A (en) * 1987-04-20 1994-09-20 Cipriani Thomas Adjustable bridge system for acoustical stringed instruments
JPH0221547A (ja) * 1988-07-08 1990-01-24 Fuji Electric Co Ltd 液体金属イオン源
GB8917570D0 (en) 1989-08-01 1989-09-13 Vg Instr Group Plasma source mass spectrometry
US5223771A (en) * 1991-06-17 1993-06-29 Western Digital (Singapore) Pte., Ltd. Polyphase brushless DC Motor control
US5160840A (en) 1991-10-25 1992-11-03 Vestal Marvin L Time-of-flight analyzer and method
US5384465A (en) * 1993-09-17 1995-01-24 Applied Materials, Inc. Spectrum analyzer in an ion implanter
JP2591081Y2 (ja) * 1993-12-29 1999-02-24 日新電機株式会社 イオン源電極支持装置
US5565881A (en) * 1994-03-11 1996-10-15 Motorola, Inc. Balun apparatus including impedance transformer having transformation length
JP3136054B2 (ja) 1994-08-16 2001-02-19 東京エレクトロン株式会社 プラズマ処理装置
US5451784A (en) 1994-10-31 1995-09-19 Applied Materials, Inc. Composite diagnostic wafer for semiconductor wafer processing systems
US5565681A (en) * 1995-03-23 1996-10-15 Applied Materials, Inc. Ion energy analyzer with an electrically controlled geometric filter
US5650618A (en) * 1995-11-30 1997-07-22 The Regents Of The University Of California Compact mass spectrometer for plasma discharge ion analysis
US5989349A (en) 1997-06-24 1999-11-23 Applied Materials, Inc. Diagnostic pedestal assembly for a semiconductor wafer processing system
JP2000208295A (ja) 1999-01-11 2000-07-28 Hitachi Ltd プラズマ計測電極およびそれを用いた計測方法
US6326794B1 (en) 1999-01-14 2001-12-04 International Business Machines Corporation Method and apparatus for in-situ monitoring of ion energy distribution for endpoint detection via capacitance measurement
US6653852B1 (en) 2000-03-31 2003-11-25 Lam Research Corporation Wafer integrated plasma probe assembly array
JP4175456B2 (ja) 2002-03-26 2008-11-05 株式会社 東北テクノアーチ オンウエハ・モニタリング・システム
US7045466B2 (en) 2002-06-27 2006-05-16 Cornell Research Foundation, Inc. Three dimensional high aspect ratio micromachining
US20050011611A1 (en) 2002-07-12 2005-01-20 Mahoney Leonard J. Wafer probe for measuring plasma and surface characteristics in plasma processing environments
US6830650B2 (en) 2002-07-12 2004-12-14 Advanced Energy Industries, Inc. Wafer probe for measuring plasma and surface characteristics in plasma processing environments
JP4268812B2 (ja) 2003-01-31 2009-05-27 株式会社アルバック イオンエネルギー分析器の感度補正方法
US7557362B2 (en) 2004-02-04 2009-07-07 Veeco Instruments Inc. Ion sources and methods for generating an ion beam with a controllable ion current density distribution
US8158016B2 (en) 2004-02-04 2012-04-17 Veeco Instruments, Inc. Methods of operating an electromagnet of an ion source
JP2004281232A (ja) * 2003-03-14 2004-10-07 Ebara Corp ビーム源及びビーム処理装置
US7445830B2 (en) * 2003-03-17 2008-11-04 Tech-Wood International Ltd. Reinforced profile containing elements to limit expansion
US7947950B2 (en) 2003-03-20 2011-05-24 Stc.Unm Energy focus for distance of flight mass spectometry with constant momentum acceleration and an ion mirror
US6881966B2 (en) 2003-05-15 2005-04-19 Axcelis Technologies, Inc. Hybrid magnetic/electrostatic deflector for ion implantation systems
CN101006541B (zh) * 2003-06-02 2010-07-07 福克斯·彻斯癌症中心 高能多能离子选择系统、离子束治疗系统及离子束治疗中心
US7385187B2 (en) 2003-06-21 2008-06-10 Leco Corporation Multi-reflecting time-of-flight mass spectrometer and method of use
US6902646B2 (en) * 2003-08-14 2005-06-07 Advanced Energy Industries, Inc. Sensor array for measuring plasma characteristics in plasma processing environments
US7740737B2 (en) 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
US20060043063A1 (en) 2004-09-02 2006-03-02 Mahoney Leonard J Electrically floating diagnostic plasma probe with ion property sensors
JP4773079B2 (ja) 2004-11-26 2011-09-14 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法
US7691226B2 (en) 2005-03-24 2010-04-06 Tokyo Electron Limited Electron temperature measurement method, electron temperature measurement program for implementing the method, and storage medium storing the electron temperature measurement program
TWI268183B (en) * 2005-10-28 2006-12-11 Ind Tech Res Inst Capacitive ultrasonic transducer and method of fabricating the same
KR100782370B1 (ko) 2006-08-04 2007-12-07 삼성전자주식회사 지연 전기장을 이용한 이온 에너지 분포 분석기에 근거한이온 분석 시스템
US20080179264A1 (en) * 2007-01-25 2008-07-31 Abrams Franklin J Glassware or stemware drying mat with stainless steel serving tray
KR100868019B1 (ko) 2007-01-30 2008-11-10 삼성전자주식회사 플라즈마 쉬쓰 제어기를 갖는 이온 빔 장치
US7867409B2 (en) 2007-03-29 2011-01-11 Tokyo Electron Limited Control of ion angular distribution function at wafer surface
US7875859B2 (en) * 2008-03-31 2011-01-25 Tokyo Electron Limited Ion energy analyzer and methods of manufacturing and operating
TWI383715B (zh) * 2008-05-16 2013-01-21 Nan Ya Printed Circuit Board 高密度基板之結構與製法
JP5428450B2 (ja) * 2009-03-30 2014-02-26 ソニー株式会社 イオン照射ダメージの予測方法とイオン照射ダメージのシミュレータ、およびイオン照射装置とイオン照射方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652427A (en) * 1994-02-28 1997-07-29 Analytica Of Branford Multipole ion guide for mass spectrometry
CN101401187A (zh) * 2006-03-10 2009-04-01 瓦里安半导体设备公司 监测和控制等离子体制造工艺的技术
US20090242791A1 (en) * 2008-03-31 2009-10-01 Tokyo Electron Limited Two-grid ion energy analyzer and methods of manufacturing and operating

Also Published As

Publication number Publication date
US20120248311A1 (en) 2012-10-04
US9087677B2 (en) 2015-07-21
WO2012135351A2 (en) 2012-10-04
CN103534780A (zh) 2014-01-22
JP6023787B2 (ja) 2016-11-09
TWI505318B (zh) 2015-10-21
US8816281B2 (en) 2014-08-26
WO2012135351A3 (en) 2012-11-15
KR101967490B1 (ko) 2019-04-09
US8847159B2 (en) 2014-09-30
KR20140030168A (ko) 2014-03-11
US20120248310A1 (en) 2012-10-04
TW201250764A (en) 2012-12-16
JP2014513390A (ja) 2014-05-29
US20120248322A1 (en) 2012-10-04

Similar Documents

Publication Publication Date Title
US8847159B2 (en) Ion energy analyzer
US7777179B2 (en) Two-grid ion energy analyzer and methods of manufacturing and operating
US7875859B2 (en) Ion energy analyzer and methods of manufacturing and operating
JP4929347B2 (ja) Ｐｉｆプロービング構成を用いるプラズマ処理の制御
CN101039543B (zh) 可调整高度的等离子体离子流探头
JP7798510B2 (ja) プラズマプロセスのイオンエネルギー分析用の装置
EP0709874B1 (en) Diagnostic wafer
KR102449986B1 (ko) Rf 전달을 위해 임베딩된 패러데이 케이지를 포함하는 세라믹 정전 척 및 동작, 모니터링, 및 제어를 위한 연관된 방법들
EP1884984B1 (en) Ion analysis system based on analyzer of ion energy distribution using retarded electric field
JP2014513390A5 (cg-RX-API-DMAC7.html)
JPH10509557A (ja) プラズマ中のイオン流の測定方法及び装置
US6653852B1 (en) Wafer integrated plasma probe assembly array
CN101636814B (zh) 质谱仪
JPH0945494A (ja) 電気制御式の幾何学的フィルタを有するイオンエネルギ分析器
JP5271768B2 (ja) プラズマモニタリング方法
KR20170106817A (ko) 정전용량 변화를 이용한 플라즈마 밀도 측정 방법 및 장치, 그리고 측정용 탐침
JP2011113917A (ja) プラズマ監視用プローブ、プラズマ監視装置及びプラズマ処理装置
JPS59163827A (ja) プラズマエツチング装置
KR100450979B1 (ko) 플라즈마 진단용 웨이퍼 제조 방법
KR19990008724A (ko) 플라즈마 처리장치 및 이의 잔류물 제거 플레이트 제조방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20160706

CF01 Termination of patent right due to non-payment of annual fee