CN103525321A - Photovoltaic EVA film resisting PID - Google Patents
Photovoltaic EVA film resisting PID Download PDFInfo
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- CN103525321A CN103525321A CN201310528538.5A CN201310528538A CN103525321A CN 103525321 A CN103525321 A CN 103525321A CN 201310528538 A CN201310528538 A CN 201310528538A CN 103525321 A CN103525321 A CN 103525321A
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- eva film
- pid
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Abstract
The invention relates to a photovoltaic EVA film resisting PID. The photovoltaic EVA film resisting the PID comprises the following components, by mass fraction, 0.05-5% of cross-linking agents, 0.05-5% of assistant crosslinker agents, 0.2-10% of polyolefin ionomer, 0.1-5% of hydrophobing agents, normal additives and the balance EVA. The photovoltaic EVA film resisting the PID is low in cost and high in performance, has no selectivity on battery pieces, the PID resistance performance is lasting and stable, and the photovoltaic EVA film resisting the PID can pass the PID standard test of IEC, has identical lasting PID resistance performance in a photovoltaic system, thoroughly eradicates the PID problem of components in an EVA level, and meets the demands of current and future component markets.
Description
Technical field
The present invention relates to a kind of EVA glued membrane, relate in particular to the photovoltaic EVA film of a kind of anti-PID.
Background technology
PID(Potential Induced Degradation) be potential electromotive force induction decay, a specific character of power production photovoltaic battery plate, processes bad meeting and causes the power efficiency of photovoltaic battery panel to decline.In recent years, there is reduction in various degree in increasing customer response power station assembly generated energy, and lower than desired value, much verified is because PID causes.PID phenomenon is understood by more people at present, and has increasing research institution and module manufacturer they are conducted in-depth research and publish an article.
In order to reduce the impact of PID, done at present multiple effort both at home and abroad.In battery aspect, attempted above various changes, such as changing base resistance rate, emitter resistance rate, antireflective film SI/N ratio, thickness and compactness, all cannot between battery efficiency, cost and anti-PID performance, obtain a trim point.Finally find in PECVD(plasma enhanced chemical vapor deposition method) frontly by thermooxidizing, form the SiO that one deck nano level is thick
2film, can obtain good PID-Resistive battery.But this technique is comparatively complicated, and has suitable unstable, and cost is also higher.In assembly aspect, also there is certain methods, such as adopting high volume specific resistance packaged material, low Na glass, but today of sharply controlling at cost is also unrealistic.
EVA is the abbreviation of ethylene-vinyl acetate copolymer, and photovoltaic EVA glued membrane is the sticking glued membrane of a kind of thermoset, for being placed in the middle of doubling glass.Superiority because photovoltaic EVA glued membrane has at aspects such as clinging power, weather resistance, optical characteristics, makes it be more and more widely used in electric current assembly and various optical articles.Although photovoltaic EVA glued membrane accounts for a seldom part for assembly holistic cost, closely bound up with assembly reliability, technical requirements is higher.Therefore from the viewpoint of cost control, operational path etc., optimization photovoltaic EVA formula makes it have anti-PID performance becomes one of the most real feasible method.The various Problem of Failure of the assembly occurring at present all more or less have relation with photovoltaic EVA glued membrane, about photovoltaic EVA glued membrane formula, both at home and abroad also in continuous Improvement.
Anti-PID photovoltaic EVA glued membrane should have higher weathering resistance, more outstanding property indices, comprises wet and heat ageing resistant, ultraviolet aging resistance, heat oxygen aging resistance, volume specific resistance, shrinking percentage, anti-yellowing change, high transmission rate, meets factory's streamline rate request with other match materials, lamination curing speed.But it is also not clear and definite so far to form mechanism about PID, for crystal silicon component, conjecture is because sodium ion migration causes, the electronic conduction of low potential, thus extraneous active metal ion penetration SIN changes shunting resistance, and packing factor FF can obviously reduce.At present, PIDFree is by many assembly Chang He Battery Plant as one of attraction, and many photovoltaic module users also start only to accept the assembly of PIDFree.
The domestic and international existing certain progress of the anti-PID technology of photovoltaic EVA glued membrane, as CN103254802A disclose one plant the decay photovoltaic EVA packaging adhesive film of (PID) of the potential electromotive force induction of anti-photovoltaic module, this glued membrane is mainly used in photovoltaic component encapsulating field.The EVA packaging adhesive film of the potential electromotive force of described anti-photovoltaic module induction decay, by the following raw material in weight part: 100 parts of ethylene-vinyl acetate copolymers, initiator 0.2-1.5 part, oxidation inhibitor 0.1-0.5 part, ultraviolet absorbers 0.1-0.5 part, photostabilizer 0.1-0.5 part, tackifier 0.1-1.0 part, metal ion capturing agent 0.1-1 part are prepared from.Yet these EVA glued membranes have very strong selectivity to cell piece, the anti-PID better performances to this batch of cell piece often, another to the anti-PID performance of next batch cell piece as, even poor, anti-PID performance is lack of consistency and persistence.It is the task of top priority that how fast, good, province ground solves PID.
Summary of the invention
The object of the present invention is to provide the photovoltaic EVA film of a kind of anti-PID.By adding polyolefin ionomers, slowed down the travelling speed of sodium ion under voltage drives; Add hydrophobic auxiliary agent, reduce water content in EVA, also can slow down sodium ion travelling speed, improve the volume specific resistance of EVA simultaneously, reduce cell piece silicon nitride surface voltage stress, also can reduce the travelling speed of sodium ion, thereby make the photovoltaic EVA film providing there is lasting anti-PID performance.
For reaching above-mentioned purpose, the present invention adopts following technical scheme:
The photovoltaic EVA film of a kind of anti-PID, by massfraction, contain following composition: linking agent 0.05-5%, be for example 0.08%, 0.15%, 0.3%, 0.5%, 0.8%, 1.2%, 1.8%, 2.5%, 2.9%, 3.5%, 4%, 4.5%, 4.9% etc., additional crosslinker 0.05-5%, be for example 0.08%, 0.15%, 0.3%, 0.5%, 0.8%, 1.2%, 1.8%, 2.5%, 2.9%, 3.5%, 4%, 4.5%, 4.9% etc., polyolefin ionomers 0.2-10%, be for example 0.4%, 0.8%, 1.5%, 2.2%, 2.8%, 3.5%, 4.4%, 5.5%, 6.4%, 7%, 9%, 9.8% etc., hydrophobizing agent 0.1-5%, be for example 0.15%, 0.3%, 0.5%, 0.8%, 1.2%, 1.8%, 2.5%, 2.9%, 3.5%, 4%, 4.5%, 4.9% etc., conventional auxiliary agent and surplus EVA.
As optimal technical scheme, photovoltaic EVA film of the present invention, contains following composition by massfraction:
In EVA film formulation, add polyolefin ionomers, can slow down the travelling speed that voltage drives lower sodium ion; Add hydrophobizing agent, can reduce water content in EVA, slow down sodium ion travelling speed, simultaneously also improve EVA volume specific resistance, can reduce cell piece silicon nitride surface voltage stress, also can reduce the travelling speed of sodium ion.
The hydrophobic performance of hydrophobizing agent can effectively reduce the water-intake rate of EVA, thereby reduce the moisture content of trace in EVA, after moisture content reduction adds, the electromigration speed of sodium ion will significantly decline, after moisture content reduces simultaneously, the volume specific resistance of EVA also increases, and has so just reduced cell piece silicon nitride surface voltage stress, also can reduce the travelling speed of sodium ion.
As optimal technical scheme, photovoltaic EVA film of the present invention, described conventional auxiliary agent and massfraction thereof are: UV light stabilizing agent 0.02-0.7% is for example 0.04%, 0.08%, 0.12%, 0.17%, 0.25%, 0.3%, 0.36%, 0.44%, 0.51%, 0.58%, 0.62%, 0.66%, 0.69% etc., auxiliary antioxidant 0.02-0.7%, for example, be 0.04%, 0.08%, 0.12%, 0.17%, 0.25%, 0.3%, 0.36%, 0.44%, 0.51%, 0.58%, 0.62%, 0.66%, 0.69% etc., tackifier 0.02-0.7%, for example, be 0.04%, 0.08%, 0.12%, 0.17%, 0.25%, 0.3%, 0.36%, 0.44%, 0.51%, 0.58%, 0.62%, 0.66%, 0.69% etc., fire retardant 0.02-0.7%, for example, be 0.04%, 0.08%, 0.12%, 0.17%, 0.25%, 0.3%, 0.36%, 0.44%, 0.51%, 0.58%, 0.62%, 0.66%, 0.69% etc., or antacid 0.02-0.7%, be for example 0.04%, 0.08%, 0.12%, 0.17%, 0.25%, 0.3%, 0.36%, 0.44%, 0.51%, 0.58%, 0.62%, 0.66%, one kind or two or more mixture in 0.69% grade.
Preferably, described conventional auxiliary agent and massfraction thereof are:
As optimal technical scheme, photovoltaic EVA film of the present invention, described linking agent is tert-butyl hydroperoxide carbonic acid-2-ethylhexyl.
Preferably, described additional crosslinker is cyanacrylate and/or trimethylolpropane trimethacrylate, is preferably the compound of cyanacrylate and trimethylolpropane trimethacrylate.
Preferably, described polyolefin ionomers is the one kind or two or more mixture in polyethylene-methacrylic acid metal salt, polystyrolsulfon acid metal-salt or sarin resin, is preferably the one kind or two or more mixture in polyethylene-sodium methacrylate, polyethylene-methacrylic acid potassium, polyethylene-lithium methacrylate, polyethylene-zinc methacrylate, polyethylene-methacrylic acid calcium, sodium polystyrene sulfonate, polystyrolsulfon acid potassium, polystyrolsulfon acid lithium, polystyrolsulfon acid zinc, calcium polystyreme sulphonate, sarin resin.
The structural formula of above-mentioned polyethylene-methacrylate is as follows.
Wherein, M is metal ion, is preferably Ca
2+, Zn
2+, Li
+, Na
+or K
+.
The structural formula of above-mentioned poly styrene sulfonate is as follows.
Wherein, M is metal ion, is preferably Ca
2+, Zn
2+, Li
+, Na
+or K
+.
Ionomer be on a class macromolecular chain with a small amount of ionogen, and by the part or all of macromolecular material of neutralization of metal ion, by the skeletal chain of main ingredient non-ionic type and a small amount of component containing ion, formed.Polyolefin ionomers is polyethylene-methacrylic acid metal salt, polystyrolsulfon acid metal-salt or the one kind or two or more mixture of sarin resin, there is stronger ionic bonding effect these material inside, can produce stronger locking action to metal ion, these materials join in EVA, after EVA lamination, EVA cross-linked structure in just with these ion locking keies, thereby the sodium ion that glass surface is moved out has certain flutterring to catch and locking action, reduced the rate of migration of sodium ion to cell piece surface.
Preferably, described hydrophobizing agent is modified polyorganosiloxane, is preferably polydimethylsiloxane and derivative thereof and/or PSI and derivative thereof.These materials have stronger hydrophobic performance, join the water-intake rate that EVA can effectively reduce EVA, thereby reduce the moisture content of trace in EVA, after moisture content reduction adds, the electromigration speed of sodium ion will significantly decline, and after moisture content reduces simultaneously, the volume specific resistance of EVA also increases, so just reduce cell piece silicon nitride surface voltage stress, also can reduce the travelling speed of sodium ion.
As optimal technical scheme, photovoltaic EVA film of the present invention, described UV light stabilizing agent is two (2,2,6,6 tetramethyl--4 piperidyl) SA esters.
Preferably, described auxiliary antioxidant is three (4-nonyl phenol) phosphorous acid ester and/or tricresyl phosphites (2,4-di-tert-butyl-phenyl) ester, is preferably the compound of three (4-nonyl phenol) phosphorous acid esters and tricresyl phosphite (2,4-di-tert-butyl-phenyl) ester.
Preferably, described tackifier are γ-methacryloxypropyl trimethoxy silane.
Preferably, described fire retardant is trioctyl phosphate.
Preferably, described antacid is calcium stearate.
As optimal technical scheme, photovoltaic EVA film of the present invention, contains following composition by massfraction:
As optimal technical scheme, photovoltaic EVA film of the present invention, contains following composition by massfraction:
EVA film of the present invention can be prepared by prior art.
Photovoltaic EVA film provided by the invention is a kind of low cost, high performance anti-PID EVA glued membrane, and cell piece is not had to selectivity, and anti-PID consistency of performance is stable, has passed through the PID standard testing of IEC.In photovoltaic system, there is same lasting anti-PID performance, in EVA aspect, thoroughly stop the PID problem of assembly, meet the requirement in present and following assembly market.
Embodiment
Below by embodiment, further illustrate technical scheme of the present invention.
Embodiment mono-
Described photovoltaic EVA film, contains following composition by massfraction:
Embodiment bis-
Described photovoltaic EVA film, contains following composition by massfraction:
Embodiment tri-
Described photovoltaic EVA film, contains following composition by massfraction:
Embodiment tetra-
Described photovoltaic EVA film, contains following composition by massfraction:
Embodiment five
Described photovoltaic EVA film, contains following composition by massfraction:
The EVA film that the embodiment of the present invention one to five is made carries out performance test, and result is as follows:
1, identical with conventional EVA, also divide also high resistance type of high-transparency, high-transparency ultraviolet cut-on is below 300nm, and high resistance type ultraviolet cut-on is in 360nm left and right;
2, the long-term voltage-withstand test of assembly (IEC standard two 85 ,-1000v), power attenuation is in 5%;
3, there is stronger weathering resistance, be applied in Crystalline Silicon PV Module, quality guarantee 25 years;
4, lamination curing speed meets the requirement of assembly common process;
5, transmittance is on 92%;
6, volume specific resistance reaches 10
15～10
16Ω .cm;
7, shrinking percentage is below 2%;
8, hydrothermal aging is 2000 hours, and xanthochromia YI is below 4;
9, ultraviolet ageing 60KWh/m
2, xanthochromia YI is below 3;
10, as good in the consistency of backboard, glass, welding, cell piece, soldering flux with other material.
First the EVA film of the anti-PID of the present invention exploitation has common EVA property indices, also possesses reliable anti-PID performance, and the CTM of assembly, also without influential, and is met to assembly manufacturing technique requirent.
Applicant's statement, the present invention illustrates detailed process equipment and process flow process of the present invention by above-described embodiment, but the present invention is not limited to above-mentioned detailed process equipment and process flow process, do not mean that the present invention must rely on above-mentioned detailed process equipment and process flow process and could implement.Person of ordinary skill in the field should understand, any improvement in the present invention, to the selection of the interpolation of the equivalence replacement of each raw material of product of the present invention and ancillary component, concrete mode etc., within all dropping on protection scope of the present invention and open scope.
Claims (8)
1. a photovoltaic EVA film of anti-PID, is characterized in that, by massfraction, contains following composition:
2. photovoltaic EVA film according to claim 1, is characterized in that, by massfraction, contains following composition:
3. photovoltaic EVA film according to claim 1 and 2, is characterized in that, described conventional auxiliary agent and massfraction thereof are:
4. photovoltaic EVA film according to claim 3, is characterized in that, described conventional auxiliary agent and massfraction thereof are:
5. according to the photovoltaic EVA film described in claim 1-4 any one, it is characterized in that, described linking agent is tert-butyl hydroperoxide carbonic acid-2-ethylhexyl;
Preferably, described additional crosslinker is cyanacrylate and/or trimethylolpropane trimethacrylate, is preferably the compound of cyanacrylate and trimethylolpropane trimethacrylate;
Preferably, described polyolefin ionomers is the one kind or two or more mixture in polyethylene-methacrylic acid metal salt, polystyrolsulfon acid metal-salt or sarin resin, is preferably the one kind or two or more mixture in polyethylene-sodium methacrylate, polyethylene-methacrylic acid potassium, polyethylene-lithium methacrylate, polyethylene-zinc methacrylate, polyethylene-methacrylic acid calcium, sodium polystyrene sulfonate, polystyrolsulfon acid potassium, polystyrolsulfon acid lithium, polystyrolsulfon acid zinc, calcium polystyreme sulphonate, sarin resin;
Preferably, described hydrophobizing agent is modified polyorganosiloxane, is preferably polydimethylsiloxane and derivative thereof and/or PSI and derivative thereof.
6. according to the photovoltaic EVA film described in claim 3-5 any one, it is characterized in that, described UV light stabilizing agent is two (2,2,6,6 tetramethyl--4 piperidyl) SA esters;
Preferably, described auxiliary antioxidant is three (4-nonyl phenol) phosphorous acid ester and/or tricresyl phosphites (2,4-di-tert-butyl-phenyl) ester, is preferably the compound of three (4-nonyl phenol) phosphorous acid esters and tricresyl phosphite (2,4-di-tert-butyl-phenyl) ester;
Preferably, described tackifier are γ-methacryloxypropyl trimethoxy silane;
Preferably, described fire retardant is trioctyl phosphate;
Preferably, described antacid is calcium stearate.
7. photovoltaic EVA film according to claim 1, is characterized in that, by massfraction, contains following composition:
8. photovoltaic EVA film according to claim 1, is characterized in that, by massfraction, contains following composition:
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|---|---|---|---|
| CN201310528538.5A CN103525321B (en) | 2013-10-30 | 2013-10-30 | Photovoltaic EVA film resisting PID |
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|---|---|---|---|
| CN201310528538.5A CN103525321B (en) | 2013-10-30 | 2013-10-30 | Photovoltaic EVA film resisting PID |
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| CN103525321B CN103525321B (en) | 2015-03-11 |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105086097A (en) * | 2014-05-09 | 2015-11-25 | 杜邦公司 | Crosslinkable ethylene/vinyl acetate copolymer composition and solar cell encapsulation material containing same |
| CN105470336A (en) * | 2015-12-31 | 2016-04-06 | 江苏宇兆能源科技有限公司 | Novel solar photovoltaic module resistant to proportion integration differentiation (PID) effect |
| EP3034529A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising (meth)acrylamide compounds |
| EP3034526A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films |
| EP3034527A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising bis-(alkenylamide) compounds |
| EP3034525A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising pentaerythritol compounds |
| EP3034528A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising urea compounds |
| EP3034531A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Dispersion for easy use in the production of encapsulation films |
| EP3034567A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising ethylene glycoldi(meth)acrylate compounds |
| EP3034568A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising triallylisocyanurate and triallylcyanurate |
| EP3034530A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising dienes |
| CN109285902A (en) * | 2017-07-20 | 2019-01-29 | 财团法人工业技术研究院 | Solar photoelectric module |
| CN111763286A (en) * | 2019-04-02 | 2020-10-13 | 阿特斯阳光电力集团有限公司 | Packaging material and preparation method and application thereof |
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| CN102115643A (en) * | 2010-12-31 | 2011-07-06 | 广州鹿山新材料股份有限公司 | Novel solar cell packaging adhesive film |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105086097A (en) * | 2014-05-09 | 2015-11-25 | 杜邦公司 | Crosslinkable ethylene/vinyl acetate copolymer composition and solar cell encapsulation material containing same |
| EP3034528A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising urea compounds |
| EP3034567A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising ethylene glycoldi(meth)acrylate compounds |
| EP3034526A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films |
| EP3034527A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising bis-(alkenylamide) compounds |
| EP3034525A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising pentaerythritol compounds |
| US10233275B2 (en) | 2014-12-19 | 2019-03-19 | Evonik Degussa Gmbh | Co-crosslinker systems for encapsulation films comprising BIS(alkenylamide) compounds |
| EP3034531A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Dispersion for easy use in the production of encapsulation films |
| EP3034529A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising (meth)acrylamide compounds |
| EP3034568A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising triallylisocyanurate and triallylcyanurate |
| EP3034530A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising dienes |
| CN105470336B (en) * | 2015-12-31 | 2017-06-09 | 江苏宇兆能源科技有限公司 | A kind of solar energy photovoltaic component of anti-PID effects |
| CN105470336A (en) * | 2015-12-31 | 2016-04-06 | 江苏宇兆能源科技有限公司 | Novel solar photovoltaic module resistant to proportion integration differentiation (PID) effect |
| CN109285902A (en) * | 2017-07-20 | 2019-01-29 | 财团法人工业技术研究院 | Solar photoelectric module |
| CN111763286A (en) * | 2019-04-02 | 2020-10-13 | 阿特斯阳光电力集团有限公司 | Packaging material and preparation method and application thereof |
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| CN103525321B (en) | 2015-03-11 |
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Effective date of registration: 20160629 Address after: 215011 Suzhou high tech Industrial Development Zone, Jiangsu, Lu Shan Road, No. 199 Patentee after: Canadian (China) Investment Co., Ltd. Patentee after: Changshu Canadian Solar Inc. Patentee after: CHANGSHU TEGU NEW MATERIAL TECHNOLOGY CO., LTD. Address before: 215011 Suzhou high tech Industrial Development Zone, Jiangsu, Lu Shan Road, No. 199 Patentee before: Canadian (China) Investment Co., Ltd. Patentee before: Changshu Canadian Solar Inc. |
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| CP01 | Change in the name or title of a patent holder |
Address after: 215011 Suzhou high tech Industrial Development Zone, Jiangsu, Lu Shan Road, No. 199 Co-patentee after: Changshu Canadian Solar Inc. Patentee after: Artes sunshine Power Group Co. Ltd. Co-patentee after: CHANGSHU TEGU NEW MATERIAL TECHNOLOGY CO., LTD. Address before: 215011 Suzhou high tech Industrial Development Zone, Jiangsu, Lu Shan Road, No. 199 Co-patentee before: Changshu Canadian Solar Inc. Patentee before: Canadian (China) Investment Co., Ltd. Co-patentee before: CHANGSHU TEGU NEW MATERIAL TECHNOLOGY CO., LTD. |
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| CP03 | Change of name, title or address |
Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: Atlas sunshine Power Group Co.,Ltd. Patentee after: Changshu Artes Sunshine Power Technology Co.,Ltd. Patentee after: CHANGSHU TEGU NEW MATERIAL TECHNOLOGY Co.,Ltd. Address before: No. 199, Lushan Road, Suzhou hi tech Industrial Development Zone, Jiangsu Province, 215011 Patentee before: CSI SOLAR POWER GROUP Co.,Ltd. Patentee before: Changshu Artes Sunshine Power Technology Co.,Ltd. Patentee before: CHANGSHU TEGU NEW MATERIAL TECHNOLOGY Co.,Ltd. |
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| CP03 | Change of name, title or address |