CN103525321B - Photovoltaic EVA film resisting PID - Google Patents
Photovoltaic EVA film resisting PID Download PDFInfo
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- CN103525321B CN103525321B CN201310528538.5A CN201310528538A CN103525321B CN 103525321 B CN103525321 B CN 103525321B CN 201310528538 A CN201310528538 A CN 201310528538A CN 103525321 B CN103525321 B CN 103525321B
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Abstract
The invention relates to a photovoltaic EVA film resisting PID. The photovoltaic EVA film resisting the PID comprises the following components, by mass fraction, 0.05-5% of cross-linking agents, 0.05-5% of assistant crosslinker agents, 0.2-10% of polyolefin ionomer, 0.1-5% of hydrophobing agents, normal additives and the balance EVA. The photovoltaic EVA film resisting the PID is low in cost and high in performance, has no selectivity on battery pieces, the PID resistance performance is lasting and stable, and the photovoltaic EVA film resisting the PID can pass the PID standard test of IEC, has identical lasting PID resistance performance in a photovoltaic system, thoroughly eradicates the PID problem of components in an EVA level, and meets the demands of current and future component markets.
Description
Technical field
The present invention relates to a kind of EVA adhesive film, particularly relate to the Photovoltaic EVA film of a kind of anti-PID.
Background technology
PID(Potential Induced Degradation) be potential potential induction attenuation, a kind of characteristic of power production photovoltaic battery plate, processes bad meeting and causes the power efficiency of photovoltaic battery panel to decline.In recent years, there is reduction in various degree in increasing customer response power station assembly generated energy, lower than desired value, much verified is because PID causes.Current PID phenomenon understand by more people, and have increasing research institution and module manufacturer conduct in-depth research it and publish an article.
In order to reduce the impact of PID, do multiple effort both at home and abroad at present.In battery aspect, attempted above various change, and such as changed base resistance rate, emitter resistance rate, antireflective film SI/N ratio, thickness and compactness, all cannot obtain a trim point between battery efficiency, cost and anti-PID performance.Finally find in PECVD(plasma enhanced chemical vapor deposition method) frontly form the thick SiO of one deck nano level by thermooxidizing
2film, can obtain good PID-Resistive battery.But this technique is comparatively complicated, and have suitable unstable, cost is also higher.In assembly aspect, also there is certain methods, such as adopt high volume specific resistance packaged material, low Na glass, but in today that cost sharply controls, also unrealistic.
EVA is the abbreviation of ethylene-vinyl acetate copolymer, and photovoltaic EVA adhesive film is the sticking glued membrane of a kind of thermoset, for being placed in the middle of doubling glass.Due to the superiority that photovoltaic EVA adhesive film has in clinging power, weather resistance, optical characteristics etc., it is made more and more to be widely used in current components and various optical articles.Although photovoltaic EVA adhesive film accounts for a little part for component integration cost, closely bound up with assembly reliability, technical requirements is higher.Therefore from the viewpoint of cost control, operational path etc., optimize photovoltaic EVA formula and make it have anti-PID performance and become one of method of most practicable.The various Problem of Failure of the assembly of current appearance all more or less have relation with photovoltaic EVA adhesive film, about photovoltaic EVA adhesive film formula, both at home and abroad also in continuous Improvement.
Anti-PID photovoltaic EVA adhesive film should have higher weathering resistance, comparatively outstanding property indices, comprises wet and heat ageing resistant, ultraviolet aging resistance, heat oxygen aging resistance, volume specific resistance, shrinking percentage, anti-yellowing change, high transmission rate, meets factory lines rate request with other match materials, lamination curing speed.But also not clear and definite so far about PID formation mechenism, be because sodium ions causes for crystal silicon component conjecture, the electronic conduction of low potential, extraneous active metal ion penetrates SIN thus changes shunting resistance, and packing factor FF can obviously reduce.At present, PIDFree is by many assembly factories and Battery Plant as one of attraction, and many photovoltaic module users also start the assembly only accepting PIDFree.
Domestic and international photovoltaic EVA adhesive film anti-PID technology has certain progress, and as CN103254802A discloses a photovoltaic EVA packaging adhesive film for the potential potential induction attenuation of the anti-light photovoltaic assembly of kind (PID), this glued membrane is mainly used in photovoltaic component encapsulating field.The EVA packaging adhesive film of the potential potential induction attenuation of described anti-light photovoltaic assembly, by with the following raw material of parts by weight: ethylene-vinyl acetate copolymer 100 parts, initiator 0.2-1.5 part, oxidation inhibitor 0.1-0.5 part, ultraviolet absorbers 0.1-0.5 part, photostabilizer 0.1-0.5 part, tackifier 0.1-1.0 part, metal ion capturing agent 0.1-1 part are prepared from.But these EVA adhesive film have very strong selectivity to cell piece, often to the anti-PID better performances of this batch of cell piece, as another to the anti-PID performance of next batch cell piece, even poor, anti-PID performance is lack of consistency and persistence.It is the task of top priority that how fast, good, province ground solves PID.
Summary of the invention
The object of the present invention is to provide the Photovoltaic EVA film of a kind of anti-PID.By adding polyolefin ionomers, slow down the travelling speed of sodium ion under voltage driven; Add hydrophobic auxiliary agent, reduce water content in EVA, also can slow down sodium ions speed, improve the volume specific resistance of EVA simultaneously, reduce cell piece silicon nitride surface voltage stress, also can reduce the travelling speed of sodium ion, thus make the Photovoltaic EVA film provided have lasting anti-PID performance.
For reaching above-mentioned purpose, the present invention adopts following technical scheme:
The Photovoltaic EVA film of a kind of anti-PID, following composition is contained: linking agent 0.05-5% by massfraction, be such as 0.08%, 0.15%, 0.3%, 0.5%, 0.8%, 1.2%, 1.8%, 2.5%, 2.9%, 3.5%, 4%, 4.5%, 4.9% etc., additional crosslinker 0.05-5%, be such as 0.08%, 0.15%, 0.3%, 0.5%, 0.8%, 1.2%, 1.8%, 2.5%, 2.9%, 3.5%, 4%, 4.5%, 4.9% etc., polyolefin ionomers 0.2-10%, be such as 0.4%, 0.8%, 1.5%, 2.2%, 2.8%, 3.5%, 4.4%, 5.5%, 6.4%, 7%, 9%, 9.8% etc., hydrophobizing agent 0.1-5%, be such as 0.15%, 0.3%, 0.5%, 0.8%, 1.2%, 1.8%, 2.5%, 2.9%, 3.5%, 4%, 4.5%, 4.9% etc., conven-tional adjuvants and surplus EVA.
As optimal technical scheme, Photovoltaic EVA film of the present invention, contains following composition by massfraction:
In EVA film formula, add polyolefin ionomers, the travelling speed of sodium ion under voltage driven can be slowed down; Add hydrophobizing agent, water content in EVA can be reduced, slow down sodium ions speed, also improve the volume specific resistance of EVA simultaneously, cell piece silicon nitride surface voltage stress can be reduced, also can reduce the travelling speed of sodium ion.
The hydrophobic performance of hydrophobizing agent then effectively can reduce the water-intake rate of EVA, thus reduce the moisture content of trace in EVA, after moisture content reduction adds, the electromigration speed of sodium ion will significantly decline, after moisture content reduces simultaneously, the volume specific resistance of EVA also increases, and this reduces cell piece silicon nitride surface voltage stress, also can reduce the travelling speed of sodium ion.
As optimal technical scheme, Photovoltaic EVA film of the present invention, described conven-tional adjuvants and massfraction thereof are: UV light stabilizing agent 0.02-0.7%, such as, be 0.04%, 0.08%, 0.12%, 0.17%, 0.25%, 0.3%, 0.36%, 0.44%, 0.51%, 0.58%, 0.62%, 0.66%, 0.69% etc., auxiliary antioxidant 0.02-0.7%, be such as 0.04%, 0.08%, 0.12%, 0.17%, 0.25%, 0.3%, 0.36%, 0.44%, 0.51%, 0.58%, 0.62%, 0.66%, 0.69% etc., tackifier 0.02-0.7%, be such as 0.04%, 0.08%, 0.12%, 0.17%, 0.25%, 0.3%, 0.36%, 0.44%, 0.51%, 0.58%, 0.62%, 0.66%, 0.69% etc., fire retardant 0.02-0.7%, be such as 0.04%, 0.08%, 0.12%, 0.17%, 0.25%, 0.3%, 0.36%, 0.44%, 0.51%, 0.58%, 0.62%, 0.66%, 0.69% etc., or antacid 0.02-0.7%, be such as 0.04%, 0.08%, 0.12%, 0.17%, 0.25%, 0.3%, 0.36%, 0.44%, 0.51%, 0.58%, 0.62%, 0.66%, one kind or two or more mixture in 0.69% grade.
Preferably, described conven-tional adjuvants and massfraction thereof are:
As optimal technical scheme, Photovoltaic EVA film of the present invention, described linking agent is tert-butyl hydroperoxide carbonic acid-2-ethylhexyl.
Preferably, described additional crosslinker is cyanacrylate and/or trimethylolpropane trimethacrylate, is preferably the compound of cyanacrylate and trimethylolpropane trimethacrylate.
Preferably, described polyolefin ionomers is the one kind or two or more mixture in polyethylene methacrylic acid metal-salt, polystyrolsulfon acid metal-salt or sarin resin, is preferably the one kind or two or more mixture in polyethylene methacrylic acid sodium, polyethylene methacrylic acid potassium, polyethylene methacrylic acid lithium, polyethylene methacrylic acid zinc, polyethylene methacrylic acid calcium, sodium polystyrene sulfonate, polystyrolsulfon acid potassium, polystyrolsulfon acid lithium, polystyrolsulfon acid zinc, calcium polystyreme sulphonate, sarin resin.
The structural formula of above-mentioned polyethylene methacrylic acid salt is as follows.
Wherein, M is metal ion, is preferably Ca
2+, Zn
2+, Li
+, Na
+or K
+.
The structural formula of above-mentioned poly styrene sulfonate is as follows.
Wherein, M is metal ion, is preferably Ca
2+, Zn
2+, Li
+, Na
+or K
+.
Ionomer is with a small amount of ionogen on a class macromolecular chain, and by ionic metal moiety or whole macromolecular material neutralized, is made up of with a small amount of component containing ion the skeletal chain of main ingredient non-ionic type.Polyolefin ionomers is the one kind or two or more mixture of polyethylene methacrylic acid metal-salt, polystyrolsulfon acid metal-salt or sarin resin, there is stronger ionic bonding effect these material inside, stronger locking action can be produced to metal ion, these materials join in EVA, after EVA lamination, EVA cross-linked structure in just with these ion locking keies, thus have certain flutterring to catch and locking action to the sodium ion that glass surface moves out, reduce the rate of migration of sodium ion to cell piece surface.
Preferably, described hydrophobizing agent is modified polyorganosiloxane, is preferably polydimethylsiloxane and derivative thereof and/or PSI and derivative thereof.These materials have stronger hydrophobic performance, join the water-intake rate that EVA effectively can reduce EVA, thus reduce the moisture content of trace in EVA, after moisture content reduction adds, the electromigration speed of sodium ion will significantly decline, and after moisture content reduces simultaneously, the volume specific resistance of EVA also increases, this reduces cell piece silicon nitride surface voltage stress, also can reduce the travelling speed of sodium ion.
As optimal technical scheme, Photovoltaic EVA film of the present invention, described UV light stabilizing agent is two (2,2,6,6 tetramethyl--4 piperidyl) SA esters.
Preferably, described auxiliary antioxidant is three (4-nonyl phenol) phosphorous acid ester and/or tricresyl phosphites (2,4-di-tert-butyl-phenyl) ester, be preferably the compound of three (4-nonyl phenol) phosphorous acid esters and tricresyl phosphite (2,4-di-tert-butyl-phenyl) ester.
Preferably, described tackifier are γ-methacryloxypropyl trimethoxy silane.
Preferably, described fire retardant is trioctyl phosphate.
Preferably, described antacid is calcium stearate.
As optimal technical scheme, Photovoltaic EVA film of the present invention, contains following composition by massfraction:
As optimal technical scheme, Photovoltaic EVA film of the present invention, contains following composition by massfraction:
EVA film of the present invention is prepared by prior art.
Photovoltaic EVA film provided by the invention is a kind of low cost, high performance anti-PID EVA adhesive film, and does not have selectivity to cell piece, and anti-PID consistency of performance is stablized, and have passed the PID standard testing of IEC.There is anti-PID performance lasting equally in photovoltaic system, thoroughly stop the PID problem of assembly in EVA aspect, meet now and the requirement in future assemblies market.
Embodiment
Technical scheme of the present invention is further illustrated below by embodiment.
Embodiment one
Described Photovoltaic EVA film, contains following composition by massfraction:
Embodiment two
Described Photovoltaic EVA film, contains following composition by massfraction:
Embodiment three
Described Photovoltaic EVA film, contains following composition by massfraction:
Embodiment four
Described Photovoltaic EVA film, contains following composition by massfraction:
Embodiment five
Described Photovoltaic EVA film, contains following composition by massfraction:
The EVA film obtained to the embodiment of the present invention one to five carries out performance test, and result is as follows:
1, identical with conventional EVA, also divide high-transparency also high resistance type, high-transparency ultraviolet cut-on is at below 300nm, and high resistance type ultraviolet cut-on is at about 360nm;
2, assembly long-term pressure test (IEC standard two 85 ,-1000v), power attenuation is within 5%;
3, there is stronger weathering resistance, be applied in Crystalline Silicon PV Module, quality guarantee 25 years;
4, lamination curing speed meets the requirement of assembly common process;
5, transmittance is on 92%;
6, volume specific resistance reaches 10
15~ 10
16Ω .cm;
7, shrinking percentage is below 2%;
8, hydrothermal aging 2000 hours, xanthochromia YI is below 4;
9, ultraviolet ageing 60KWh/m
2, xanthochromia YI is below 3;
10, as good in the consistency of backboard, glass, welding, cell piece, soldering flux with other material.
First the EVA film of anti-PID of the present invention's exploitation has common EVA property indices, also possesses reliable anti-PID performance, on the CTM of assembly also without there being impact, and meets assembly manufacturing technique requirent.
Applicant states, the present invention illustrates detailed process equipment and process flow process of the present invention by above-described embodiment, but the present invention is not limited to above-mentioned detailed process equipment and process flow process, namely do not mean that the present invention must rely on above-mentioned detailed process equipment and process flow process and could implement.Person of ordinary skill in the field should understand, any improvement in the present invention, to equivalence replacement and the interpolation of ancillary component, the concrete way choice etc. of each raw material of product of the present invention, all drops within protection scope of the present invention and open scope.
Claims (15)
1. a Photovoltaic EVA film of anti-PID, is characterized in that, contains following composition by massfraction:
Described linking agent is tert-butyl hydroperoxide carbonic acid-2-ethylhexyl;
Described additional crosslinker is cyanacrylate and/or trimethylolpropane trimethacrylate;
Described polyolefin ionomers is the one kind or two or more mixture in polyethylene methacrylic acid metal-salt, polystyrolsulfon acid metal-salt or sarin resin;
Described hydrophobizing agent is modified polyorganosiloxane.
2. Photovoltaic EVA film according to claim 1, is characterized in that, contains following composition by massfraction:
3. Photovoltaic EVA film according to claim 1 and 2, is characterized in that, described conven-tional adjuvants and massfraction thereof are:
4. Photovoltaic EVA film according to claim 3, is characterized in that, described conven-tional adjuvants and massfraction thereof are:
5. Photovoltaic EVA film according to claim 1 and 2, is characterized in that, described additional crosslinker is the compound of cyanacrylate and trimethylolpropane trimethacrylate.
6. Photovoltaic EVA film according to claim 1 and 2, it is characterized in that, described polyolefin ionomers is the one kind or two or more mixture in polyethylene methacrylic acid sodium, polyethylene methacrylic acid potassium, polyethylene methacrylic acid lithium, polyethylene methacrylic acid zinc, polyethylene methacrylic acid calcium, sodium polystyrene sulfonate, polystyrolsulfon acid potassium, polystyrolsulfon acid lithium, polystyrolsulfon acid zinc, calcium polystyreme sulphonate, sarin resin.
7. Photovoltaic EVA film according to claim 1 and 2, is characterized in that, described hydrophobizing agent is polydimethylsiloxane and derivative thereof and/or PSI and derivative thereof.
8. Photovoltaic EVA film according to claim 3, is characterized in that, described UV light stabilizing agent is two (2,2,6,6 tetramethyl--4 piperidyl) SA esters.
9. Photovoltaic EVA film according to claim 3, is characterized in that, described auxiliary antioxidant is three (4-nonyl phenol) phosphorous acid esters and/or tricresyl phosphite (2,4-di-tert-butyl-phenyl) ester.
10. Photovoltaic EVA film according to claim 9, is characterized in that, described auxiliary antioxidant is the compound of three (4-nonyl phenol) phosphorous acid esters and tricresyl phosphite (2,4-di-tert-butyl-phenyl) ester.
11. Photovoltaic EVA film according to claim 3, is characterized in that, described tackifier are γ-methacryloxypropyl trimethoxy silane.
12. Photovoltaic EVA film according to claim 3, is characterized in that, described fire retardant is trioctyl phosphate.
13. Photovoltaic EVA film according to claim 3, is characterized in that, described antacid is calcium stearate.
14. Photovoltaic EVA film according to claim 1, is characterized in that, contain following composition by massfraction:
15. Photovoltaic EVA film according to claim 1, is characterized in that, contain following composition by massfraction:
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| CN201310528538.5A CN103525321B (en) | 2013-10-30 | 2013-10-30 | Photovoltaic EVA film resisting PID |
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|---|---|---|---|
| CN201310528538.5A CN103525321B (en) | 2013-10-30 | 2013-10-30 | Photovoltaic EVA film resisting PID |
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| CN103525321B true CN103525321B (en) | 2015-03-11 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105086097A (en) * | 2014-05-09 | 2015-11-25 | 杜邦公司 | Crosslinkable ethylene/vinyl acetate copolymer composition and solar cell encapsulation material containing same |
| EP3034525A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising pentaerythritol compounds |
| ES2635260T3 (en) | 2014-12-19 | 2017-10-03 | Evonik Degussa Gmbh | Corrective systems for encapsulation sheets comprising urea compounds |
| EP3034531A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Dispersion for easy use in the production of encapsulation films |
| EP3034529B1 (en) | 2014-12-19 | 2017-06-14 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising (meth)acrylamide compounds |
| EP3034568A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising triallylisocyanurate and triallylcyanurate |
| ES2632783T3 (en) | 2014-12-19 | 2017-09-15 | Evonik Degussa Gmbh | Cover network systems for encapsulation sheets comprising bis- (alkenylamide) compounds |
| EP3034567B1 (en) | 2014-12-19 | 2017-06-14 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising ethylene glycoldi(meth)acrylate compounds |
| EP3034530A1 (en) | 2014-12-19 | 2016-06-22 | Evonik Degussa GmbH | Cover net systems for encapsulation films comprising dienes |
| EP3034526B1 (en) | 2014-12-19 | 2017-06-14 | Evonik Degussa GmbH | Cover net systems for encapsulation films |
| CN105470336B (en) * | 2015-12-31 | 2017-06-09 | 江苏宇兆能源科技有限公司 | A kind of solar energy photovoltaic component of anti-PID effects |
| TW201909435A (en) * | 2017-07-20 | 2019-03-01 | 財團法人工業技術研究院 | Solar photovoltaic module |
| CN111763286B (en) * | 2019-04-02 | 2023-01-31 | 阿特斯阳光电力集团股份有限公司 | Packaging material and preparation method and application thereof |
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| FR2941888B1 (en) * | 2009-02-06 | 2011-03-25 | Arkema France | USE OF A FILM COMPOSED OF POLYOLEFIN IN A PHOTOVOLTAIC MODULE |
| CN102115643A (en) * | 2010-12-31 | 2011-07-06 | 广州鹿山新材料股份有限公司 | Novel solar cell packaging adhesive film |
| CN103320029B (en) * | 2013-06-28 | 2014-11-26 | 南京协凯科技有限公司 | Film for EVA (ethylene vinyl acetate) decoration toughened glass |
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Effective date of registration: 20160629 Address after: 215011 Suzhou high tech Industrial Development Zone, Jiangsu, Lu Shan Road, No. 199 Patentee after: Canadian (China) Investment Co., Ltd. Patentee after: Changshu Canadian Solar Inc. Patentee after: CHANGSHU TEGU NEW MATERIAL TECHNOLOGY CO., LTD. Address before: 215011 Suzhou high tech Industrial Development Zone, Jiangsu, Lu Shan Road, No. 199 Patentee before: Canadian (China) Investment Co., Ltd. Patentee before: Changshu Canadian Solar Inc. |
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Address after: 215011 Suzhou high tech Industrial Development Zone, Jiangsu, Lu Shan Road, No. 199 Co-patentee after: Changshu Canadian Solar Inc. Patentee after: Artes sunshine Power Group Co. Ltd. Co-patentee after: CHANGSHU TEGU NEW MATERIAL TECHNOLOGY CO., LTD. Address before: 215011 Suzhou high tech Industrial Development Zone, Jiangsu, Lu Shan Road, No. 199 Co-patentee before: Changshu Canadian Solar Inc. Patentee before: Canadian (China) Investment Co., Ltd. Co-patentee before: CHANGSHU TEGU NEW MATERIAL TECHNOLOGY CO., LTD. |
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Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: Atlas sunshine Power Group Co.,Ltd. Patentee after: Changshu Artes Sunshine Power Technology Co.,Ltd. Patentee after: CHANGSHU TEGU NEW MATERIAL TECHNOLOGY Co.,Ltd. Address before: No. 199, Lushan Road, Suzhou hi tech Industrial Development Zone, Jiangsu Province, 215011 Patentee before: CSI SOLAR POWER GROUP Co.,Ltd. Patentee before: Changshu Artes Sunshine Power Technology Co.,Ltd. Patentee before: CHANGSHU TEGU NEW MATERIAL TECHNOLOGY Co.,Ltd. |