CN103506910B - 光学低通滤波器基片加工工艺 - Google Patents
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Abstract
本发明公开了一种光学低通滤波器基片加工工艺，包括以下工艺步骤：定向、磨基准面、切条、切片、粘砣、磨砣、化砣、粗研磨、倒角、细研磨、抛光、清洗、检验。本发明的加工工艺是对晶体基片的微创加工工艺，通过调整线切割张力、进给速度、控制冷却剂流量和温度等一系列措施，达到对于翘曲度、弯曲度、总厚度误差、中心厚度误差等质量参数的控制，极大地降低了因刀痕、损伤、破损在基片中产生亚损伤层的几率，极大地降低了机械应力和热应力，晶体基片合格率可达98％，远远高于传统加工工艺中80％的合格率。
Description
技术领域本发明涉及光学晶体材料加工工艺；直接涉及光学晶体基片加工工艺。
背景技术光学低通滤波器，英文名称为optic low pass filter，简称OLPF，由两块或多块光学石英晶体基片与玻璃构成。在光学仪器中使用时，OLPF位于光电耦合器件(英文名称为charge coupled device，简称CCD)的前面。被摄图像信息的光束经过OLPF后产生双折射，分为寻常光光束和异常光光束，根据CCD像素尺寸的大小和总感光面积计算出抽样截止频率，同时也可计算出寻常光光束和异常光光束分开的距离。改变入射光束将会形成差额的目标频率，达到减弱或消除低频干抗条纹的目的。
由于光学低通滤波器采用晶体的双折射和透射效应，不仅对晶体基片的包裹体、折射率、条纹即脉理指标有严格要求，对基片的加工工艺也有严格的要求，以防止加工时机械应力和热应力的产生，从而保障光学低通滤波器的质量。
晶体基片的传统加工工艺一般是在磨床上用金刚石砂轮直接加工，加工过程中由于机械作用造成的刀痕、损伤、破损会在基片中产生亚损伤层，并产生机械应力和热应力，当基片作为光学低通滤波器基片使用时会产生折射率的差异，从而影响低通滤波器的质量。当机械应力和热应力超过晶体滑移临界应力时，还会导致基片破碎。
发明内容本发明的目的就是要提供一种改进的光学低通滤波器基片加工工艺，它能有效地解决传统加工工艺容易产生机械应力和热应力的问题，从而也有效地解决了传统加工工艺加工的基片作为光学低通滤波器基片使用时会产生折射率差异的问题。
本发明的目的通过下列途径实现。
光学低通滤波器基片加工工艺，包括以下工艺步骤：
a.定向
采用多向调整夹持器进行X光定向，对晶体光轴面进行定向，定向精度控制在25°20′±10′；
b.磨基准面
将定好向的夹持器放置到平面立磨机上进行基准面研磨，立磨机转速采用1000-1300转/每分钟，进刀量采用0.05-0.35mm/每分钟，厚度控制在基片最终尺寸+20μm；
c.切条
将磨好基准面的晶体块粘在玻璃板上，并在单刀切割机按照基片尺寸进行切条；
d.切片
采用线切割机进行切片，采用Φ0.1-Φ0.35mm钢丝线，磨料采用1200#粒度的绿色碳化硅，进刀速率采用0.05-0.15mm/每分钟，磨削液温度采用15-25℃，磨料输送量采用4-10升/每分钟，损伤层深度控制在0-10μm；
e.粘砣
将切割好的晶片排列整齐后，用粘接剂粘接成晶片砣；
f.磨砣
将晶片砣放入游行轮，在双面研磨机中磨砣，达到基片需求尺寸；
g.化砣
将晶片砣的粘接剂融化；
h.粗研磨
将化砣后晶片放入研磨机游行轮内进行粗研磨，磨料采用1200#绿碳化硅，粗磨加工量达到每分钟0.01-0.05mm；
i.倒角
按照基片要求将粗研磨后晶片的相应角和边进行倒角倒边加工；
j.细研磨
将倒角倒边后晶片用高纯水清洗10-20分钟后放入研磨机进行细研磨，磨料采用3000#绿碳化硅，细磨加工量达到每分钟0.005-0.008mm；
k.抛光
将细研磨后晶片在高纯水中清洗10-20分钟后放入抛光机进行抛光，磨料采用8000#氧化铈抛光粉，抛光加工量达到每分钟0.1-0.3μm；
1.清洗
将抛光后晶片在超声清洗机内加高纯水清洗60-90分钟并烘干后，装入无尘盒内；
m.检验
对加工好的晶片进行检验，合格的作为基片标记入库。
本发明的加工工艺是对晶体基片的微创加工工艺，通过调整线切割张力、进给速度、控制冷却剂流量和温度等一系列措施，达到对于翘曲度、弯曲度、总厚度误差、中心厚度误差等质量参数的控制，极大地降低了因刀痕、损伤、破损在基片中产生亚损伤层的几率，极大地降低了机械应力和热应力，晶体基片合格率可达98％，远远高于传统加工工艺中80％的合格率。采用本发明的加工工艺，极大地减少了基片作为光学低通滤波器基片使用时产生的折射率差异，从而也极大地提高了低通滤波器的质量。
附图说明
图1是待加工的光学级石英晶体立体图，图2是夹持器夹持光学级石英晶体状态图，图3是被切割晶条状态图，图4是被切割晶条待切片状态图，图5是切割好的晶片粘接排列成晶片砣状态图，图6是切割好的晶片优先选在V型槽磨具中粘成晶片砣的状态图，图7是晶片砣放入游行轮后在双面研磨机中磨砣状态图，图8是细研磨后晶片放入抛光机游行轮中的抛光状态图，图9是本发明光学低通滤波器基片加工工艺流程图。下面结合附图对本发明进行详细说明。
具体实施方式
结合具体的光学低通滤波器基片产品对本发明的实施进行描述。
光学级晶体材料的选择包括对晶体生长工艺和技术指标的选择。
晶体生长工艺：选用水热法单面长工艺生产的光学级石英晶体1进行光学低通滤波器基片产品加工，见图1。
晶体技术指标：
对光学级石英晶体1进行检验，要求达到以下技术指标：
①.包裹体：包裹体密度达到中华人民共和国国家标准GB/T7895-2008中4.5的Ia级；即：每40cm3中10-50μm包裹体个数≤1个。
②.晶体条纹即脉理：达到中华人民共和国国家标准GB/T7895-2008中4.8的1-2级；即：条纹缺陷面积占检测面积的0-1％。
③.光学均匀性：光学均匀性达到中华人民共和国国家准GB/T7895-2008中4.7的A级；即：折射率微差值≤2×10-6。
④.光谱透过率：光谱透过率达到中华人民共和国国家标准GB/T7895-2008中4.10；即：在200-400nm，透过率≥80％；在400-800nm，透过率≥85％；在800-2500nm，透过率≥90％。
光学低通滤波器用晶体基片的加工。
光学低通滤波器基片加工工艺，包括以下工艺步骤：
(1)、定向
将光学级石英晶体1装入夹持器2中，放进X光定向仪中，调整螺钉3对晶体光轴面4即Z轴面进行定向，定向精度控制在25°20′±10′，见图2。
(2)、磨基准面
将定好向的夹持器2放置到平面立磨机上进行基准面研磨，立磨机转速采用1200转/每分钟，进刀量采用0.05-0.35mm/每分钟，厚度控制在基片最终尺寸+20μm。
(3)、切条
将磨好基准面的晶体块粘在玻璃板5上，放入单刀切割机按照基片尺寸切成晶条6，见图3。
(4)、切片
将在玻璃板5上切好的晶条6放入线切割机进行切片，采用Φ0.35mm钢丝线，磨料采用1200#粒度的绿色碳化硅，进刀速率采用0.05-0.15mm/每分钟，磨削液温度采用15-25℃，磨料输送量采用4-10升/每分钟，损伤层深度控制在0-10μm，见图4。
(5)、粘砣
将切割好的晶片排列整齐后，用粘接剂粘接成晶片砣7，见图5。切割好的晶片优先选在V型槽磨具8中排列并用粘接剂粘接成晶片砣7，见图6。
(6)、磨砣
将晶片砣7放入游行轮9，在双面研磨机中磨砣，达到基片需求尺寸，见图7。
(7)、化砣
将加工好的晶片砣7的粘接剂融化。
(8)、粗研磨
将化砣后晶片放入研磨机内进行粗研磨，磨料采用1200#绿碳化硅，粗磨加工量达到每分钟0.01-0.05mm。
(9)、倒角
按照基片要求对粗研磨后晶片的相应角和边进行倒角、倒边加工。
(10)、细研磨
将倒角倒边后晶片用高纯水清洗10-20分钟后放入研磨机进行细研磨，磨料采用3000#绿碳化硅，细磨加工量达到每分钟0.005-0.008mm。
(11)、抛光
将细研磨后晶片10在高纯水中清洗10-20分钟后放入抛光机游行轮9中进行抛光，磨料采用8000#氧化铈抛光粉，抛光加工量达到每分钟0.1-0.3μm，见图8。
(12)、清洗
将抛光后晶片在超声清洗机内加高纯水清洗60-90分钟并烘干后，装入无尘盒内。
(13)、检验
对加工好的晶片进行检验，合格的作为基片标记入库。
图9示出了本发明光学低通滤波器基片加工工艺的流程。
Claims (1)
1.一种光学低通滤波器基片加工工艺，包括以下工艺步骤：
a.定向
采用多向调整夹持器(2)对晶体光轴面(4)进行定向，从而实现X光定向，定向精度控制在25°20′±10′；
b.磨基准面
将定好向的夹持器放置到平面立磨机上进行基准面研磨，立磨机转速采用1000-1300转/每分钟，进刀量采用0.05-0.35mm/每分钟，厚度控制在基片最终尺寸+20μm；
c.切条
将磨好基准面的晶体块粘在玻璃板(5)上，并在单刀切割机上按照基片尺寸进行切条；
d.切片
采用线切割机进行切片，采用Φ0.1-Φ0.35mm钢丝线，磨料采用1200#粒度的绿色碳化硅，进刀速率采用0.05-0.15mm/每分钟，磨削液温度采用15-25℃，磨料输送量采用4-10升/每分钟，损伤层深度控制在0-10μm；
e.粘砣
将切割好的晶片排列整齐后，用粘接剂粘接成晶片砣(7)；
f.磨砣
将晶片砣(7)放入游行轮(9)，在双面研磨机中磨砣，达到基片需求尺寸；
g.化砣
将晶片砣(7)的粘接剂融化；
h.粗研磨
将化砣后晶片放入研磨机内进行粗研磨，磨料采用1200#绿碳化硅，粗磨加工量达到每分钟0.01-0.05mm；
i.倒角
按照基片要求将粗研磨后晶片的相应角和边进行倒角倒边加工；
j.细研磨
将倒角倒边后晶片用高纯水清洗10-20分钟后放入研磨机进行细研磨，磨料采用3000#绿碳化硅，细磨加工量达到每分钟0.005-0.008mm；
k.抛光
将细研磨后晶片(10)在高纯水中清洗10-20分钟后放入抛光机进行抛光，磨料采用8000#氧化铈抛光粉，抛光加工量达到每分钟0.1-0.3μm；
l.清洗
将抛光后晶片在超声清洗机内加高纯水清洗60-90分钟并烘干后，装入无尘盒内；
m.检验
对加工好的晶片进行检验，合格的作为基片标记入库。
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| CN104260214B (zh) * | 2014-06-04 | 2016-11-16 | 北京石晶光电科技股份有限公司济源分公司 | 一种高精密波长板晶片加工工艺 |
| CN104526889A (zh) * | 2014-11-19 | 2015-04-22 | 四川省三台水晶电子有限公司 | 一种高精度压电式传感器用石英晶片制备方法 |
| CN104625887B (zh) * | 2014-11-30 | 2017-01-04 | 浙江台佳电子信息科技有限公司 | 一种光学零件自动化倒棱加工方法 |
| CN105479280A (zh) * | 2015-12-30 | 2016-04-13 | 中国科学院上海硅酸盐研究所 | 一种用于碳化硅晶体偏角整形的装置及方法 |
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| CN108015666A (zh) * | 2017-11-20 | 2018-05-11 | 杭州智谷精工有限公司 | 一种单平面研抛加工方法 |
| CN111497043B (zh) * | 2020-03-05 | 2022-04-05 | 秦皇岛本征晶体科技有限公司 | 一种氟化镁波片元件的制作方法 |
| CN112059912B (zh) * | 2020-09-27 | 2024-10-25 | 北京石晶光电科技股份有限公司 | 一种水晶基准面加工工装及使用方法 |
| CN114850127B (zh) * | 2022-05-30 | 2024-03-15 | 福建晶安光电有限公司 | 一种滤波器基片的清洗工艺 |
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