CN103491284B - 摄像部、摄像单元及摄像显示系统 - Google Patents

摄像部、摄像单元及摄像显示系统 Download PDF

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Publication number
CN103491284B
CN103491284B CN201310221386.4A CN201310221386A CN103491284B CN 103491284 B CN103491284 B CN 103491284B CN 201310221386 A CN201310221386 A CN 201310221386A CN 103491284 B CN103491284 B CN 103491284B
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CN
China
Prior art keywords
layer
pixel
semiconductor layer
image pickup
pickup part
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Expired - Fee Related
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CN201310221386.4A
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English (en)
Chinese (zh)
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CN103491284A (zh
Inventor
山田泰弘
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Publication of CN103491284A publication Critical patent/CN103491284A/zh
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
    • H04N5/32—Transforming X-rays
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201310221386.4A 2012-06-13 2013-06-05 摄像部、摄像单元及摄像显示系统 Expired - Fee Related CN103491284B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-133857 2012-06-13
JP2012133857A JP5988291B2 (ja) 2012-06-13 2012-06-13 撮像装置および撮像表示システム

Publications (2)

Publication Number Publication Date
CN103491284A CN103491284A (zh) 2014-01-01
CN103491284B true CN103491284B (zh) 2018-03-23

Family

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Family Applications (1)

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CN201310221386.4A Expired - Fee Related CN103491284B (zh) 2012-06-13 2013-06-05 摄像部、摄像单元及摄像显示系统

Country Status (3)

Country Link
US (1) US9357143B2 (https=)
JP (1) JP5988291B2 (https=)
CN (1) CN103491284B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103959363B (zh) * 2011-12-07 2016-04-27 夏普株式会社 光传感器电路的动作方法、以及具备该光传感器电路的显示装置的动作方法
JP6344555B2 (ja) * 2014-05-28 2018-06-20 パナソニックＩｐマネジメント株式会社 固体撮像装置
KR102359180B1 (ko) * 2014-06-09 2022-02-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
TWI700823B (zh) * 2014-06-27 2020-08-01 日商半導體能源研究所股份有限公司 攝像裝置及電子裝置
KR102355558B1 (ko) * 2014-07-31 2022-01-27 삼성전자주식회사 이미지 센서
JP2016044968A (ja) * 2014-08-19 2016-04-04 ソニー株式会社 放射線検出器、撮像装置、および撮像システム
JP6570417B2 (ja) * 2014-10-24 2019-09-04 株式会社半導体エネルギー研究所 撮像装置および電子機器
WO2016084454A1 (ja) 2014-11-27 2016-06-02 シャープ株式会社 放射線検出器
US20210151477A1 (en) * 2017-06-27 2021-05-20 Sharp Kabushiki Kaisha Imaging panel and method for producing same
CN108922940B (zh) * 2018-07-17 2020-03-06 京东方科技集团股份有限公司 光学检测像素单元、电路、光学检测方法和显示装置
CN110687710A (zh) * 2019-09-24 2020-01-14 武汉华星光电技术有限公司 显示装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101339952A (zh) * 2007-07-04 2009-01-07 松下电器产业株式会社 固体摄像装置和其制造方法

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Publication number Priority date Publication date Assignee Title
JPH0990048A (ja) * 1995-09-28 1997-04-04 Canon Inc 放射線検出装置
JP4100739B2 (ja) * 1996-10-24 2008-06-11 キヤノン株式会社 光電変換装置
JP5016746B2 (ja) * 2000-07-28 2012-09-05 キヤノン株式会社 撮像装置及びその駆動方法
KR100539234B1 (ko) * 2003-06-11 2005-12-27 삼성전자주식회사 투명 고분자 소재를 적용한 씨모스형 이미지 센서 모듈 및그 제조방법
JP2008277710A (ja) 2007-05-07 2008-11-13 Sony Corp 受光素子およびそれを備えた表示装置
JP5028154B2 (ja) * 2007-06-20 2012-09-19 キヤノン株式会社 撮像装置及びその制御方法
JP5253799B2 (ja) * 2007-12-17 2013-07-31 三菱電機株式会社 フォトセンサー、及びフォトセンサーの製造方法
JP5504661B2 (ja) * 2009-03-25 2014-05-28 セイコーエプソン株式会社 光電変換装置
JP5439984B2 (ja) * 2009-07-03 2014-03-12 ソニー株式会社 光電変換装置および放射線撮像装置
KR20120059509A (ko) * 2009-08-25 2012-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP5935237B2 (ja) * 2011-03-24 2016-06-15 ソニー株式会社 固体撮像装置および電子機器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101339952A (zh) * 2007-07-04 2009-01-07 松下电器产业株式会社 固体摄像装置和其制造方法

Also Published As

Publication number Publication date
US20130335610A1 (en) 2013-12-19
JP2013258314A (ja) 2013-12-26
US9357143B2 (en) 2016-05-31
JP5988291B2 (ja) 2016-09-07
CN103491284A (zh) 2014-01-01

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Effective date of registration: 20160920

Address after: Kanagawa

Applicant after: SONY semiconductor solutions

Address before: Tokyo, Japan

Applicant before: Sony Corp

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20180323

Termination date: 20200605

CF01 Termination of patent right due to non-payment of annual fee