CN103490006B - 磁元件和编程磁存储器的方法 - Google Patents

磁元件和编程磁存储器的方法 Download PDF

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Publication number
CN103490006B
CN103490006B CN201310225094.8A CN201310225094A CN103490006B CN 103490006 B CN103490006 B CN 103490006B CN 201310225094 A CN201310225094 A CN 201310225094A CN 103490006 B CN103490006 B CN 103490006B
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China
Prior art keywords
layer
magnetic
alloy oxide
binary
ternary
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CN201310225094.8A
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English (en)
Chinese (zh)
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CN103490006A (zh
Inventor
陈友君
唐学体
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from US13/491,568 external-priority patent/US8779538B2/en
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Publication of CN103490006A publication Critical patent/CN103490006A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN201310225094.8A 2012-06-07 2013-06-07 磁元件和编程磁存储器的方法 Active CN103490006B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/491,568 US8779538B2 (en) 2009-08-10 2012-06-07 Magnetic tunneling junction seed, capping, and spacer layer materials
US13/491,568 2012-06-07

Publications (2)

Publication Number Publication Date
CN103490006A CN103490006A (zh) 2014-01-01
CN103490006B true CN103490006B (zh) 2018-02-09

Family

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Family Applications (1)

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CN201310225094.8A Active CN103490006B (zh) 2012-06-07 2013-06-07 磁元件和编程磁存储器的方法

Country Status (3)

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JP (1) JP6319954B2 (enExample)
KR (1) KR102130054B1 (enExample)
CN (1) CN103490006B (enExample)

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KR101266791B1 (ko) * 2012-09-21 2013-05-27 고려대학교 산학협력단 면내 전류와 전기장을 이용한 자기메모리 소자
US10026888B2 (en) * 2014-08-06 2018-07-17 Toshiba Memory Corporation Magnetoresistive effect element and magnetic memory
US9349945B2 (en) * 2014-10-16 2016-05-24 Micron Technology, Inc. Memory cells, semiconductor devices, and methods of fabrication
US10573363B2 (en) 2015-12-02 2020-02-25 Samsung Electronics Co., Ltd. Method and apparatus for performing self-referenced read in a magnetoresistive random access memory
JP6495980B2 (ja) * 2017-08-08 2019-04-03 株式会社東芝 磁気メモリ
US10553642B2 (en) * 2017-08-28 2020-02-04 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions utilizing metal oxide layer(s)
US10832750B2 (en) * 2019-02-22 2020-11-10 Sandisk Technologies Llc Perpendicular spin transfer torque MRAM memory cell with cap layer to achieve lower current density and increased write margin
JP2020155565A (ja) 2019-03-20 2020-09-24 キオクシア株式会社 磁気記憶装置
US12075629B2 (en) 2019-03-20 2024-08-27 Kioxia Corporation Magnetic memory device with nonmagnetic layer having two additive elements
CN114503296A (zh) * 2019-09-27 2022-05-13 华为技术有限公司 一种mtj单元、vcma驱动方法及mram
CN112736190B (zh) * 2019-10-14 2023-04-18 上海磁宇信息科技有限公司 磁性隧道结结构及磁性随机存储器
TWI704557B (zh) * 2019-12-24 2020-09-11 大陸商珠海南北極科技有限公司 單次可程式化位元之形成方法
JP2022049406A (ja) 2020-09-16 2022-03-29 キオクシア株式会社 磁気記憶装置
KR20220125050A (ko) * 2021-03-04 2022-09-14 삼성전자주식회사 자기터널접합 소자, 자기터널접합 소자를 포함하는 메모리 장치, 및 자기터널접합 소자의 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6992359B2 (en) * 2004-02-26 2006-01-31 Grandis, Inc. Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization
JP4082711B2 (ja) * 2004-03-12 2008-04-30 独立行政法人科学技術振興機構 磁気抵抗素子及びその製造方法
JP2007048790A (ja) * 2005-08-05 2007-02-22 Sony Corp 記憶素子及びメモリ
JP4444241B2 (ja) * 2005-10-19 2010-03-31 株式会社東芝 磁気抵抗効果素子、磁気ランダムアクセスメモリ、電子カード及び電子装置
JP4786331B2 (ja) * 2005-12-21 2011-10-05 株式会社東芝 磁気抵抗効果素子の製造方法
US8063459B2 (en) * 2007-02-12 2011-11-22 Avalanche Technologies, Inc. Non-volatile magnetic memory element with graded layer
US20070297220A1 (en) * 2006-06-22 2007-12-27 Masatoshi Yoshikawa Magnetoresistive element and magnetic memory
JP2008028362A (ja) * 2006-06-22 2008-02-07 Toshiba Corp 磁気抵抗素子及び磁気メモリ
JP2008098523A (ja) * 2006-10-13 2008-04-24 Toshiba Corp 磁気抵抗効果素子および磁気メモリ
US8289663B2 (en) * 2008-04-25 2012-10-16 Headway Technologies, Inc. Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers
JP5703641B2 (ja) * 2010-09-09 2015-04-22 ソニー株式会社 記憶素子及びメモリ

Also Published As

Publication number Publication date
JP6319954B2 (ja) 2018-05-09
JP2013254957A (ja) 2013-12-19
KR102130054B1 (ko) 2020-07-06
KR20130137531A (ko) 2013-12-17
CN103490006A (zh) 2014-01-01

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