CN103490001A - Discrete type EMC packaged LED lead frame - Google Patents
Discrete type EMC packaged LED lead frame Download PDFInfo
- Publication number
- CN103490001A CN103490001A CN201310271402.0A CN201310271402A CN103490001A CN 103490001 A CN103490001 A CN 103490001A CN 201310271402 A CN201310271402 A CN 201310271402A CN 103490001 A CN103490001 A CN 103490001A
- Authority
- CN
- China
- Prior art keywords
- lead frame
- discrete type
- epoxy resin
- led lead
- emc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a discrete type EMC packaged LED lead frame which comprises a lead frame body and a welding foot area arranged on the lower portion of the lead frame body. The discrete type EMC packaged LED lead frame further comprises epoxy resin encapsulated areas, cup bottom functional areas and bottom radiating areas, and is characterized by further comprising half etched areas. The half etched areas are buried in the epoxy resin encapsulated areas, and the periphery of the LED lead frame, the unit connecting parts inside the lead frame and middle flow passes are provided with the half etched areas respectively. The discrete type EMC packaged LED lead frame has the advantages that the whole device is simple in structure and low in manufacturing cost; by means of the technical scheme, the inblock epoxy resin packaging of a lead frame in the prior art is changed into small-partition-block discrete type block packaging, the interval flow passes are the bidirectional flow passes in the front side and the back side, the flow paths wrap the two sides of the discrete type EMC packaged LED lead frame, therefore, the overall deformation of the packaged frame is smaller, the packaging quality can be guaranteed, and the reliability of the EMC product is improved.
Description
Technical field
The present invention relates to a kind of lead frame, relate in particular to the LED lead frame of a kind of discrete type EMC encapsulation, i.e. a kind of half encapsulation, for loading luminescence chip the LED lead frame of the EMC encapsulation of translucent plastic packaging in addition, belongs to the encapsulation technology field.
Background technology
Encapsulation technology is a kind of technology that integrated circuit is packed with plastics or the ceramic material of insulation, and the LED lead frame of EMC encapsulation is to make the basic material of producing semiconductor light-emitting elements, and the base material of generally making the LED lead frame of EMC encapsulation is copper alloy.First with half encapsulation of epoxy resin monoblock, make reflective cup on the LED lead frame of EMC encapsulation, again after loading chip at the bottom of cup and playing wire, utilize the transparent resin envelope to be sealed chip, form holistic semiconductor element, re-use cutter and cut into single LED product.For making LED lead frame production capacity and efficiency Zhen Genggao, the copper alloy cell gap of EMC lead frame is less, the integrability application, the tradition Sheet Metal Forming Technology can't meet need of production, the production of essential use etch process, highdensity product is arranged existing single individual packages technology can't be suitable for, and the whole integrated package of essential use, then used according to the application demand cutting whole into sections.Therefore, the LED lead frame that a kind of new EMC of exigence encapsulates solves above-mentioned technical problem.
Summary of the invention
The present invention is just for the technical problem existed in prior art, and a kind of LED lead frame of simple in structure, easy to operate discrete type EMC encapsulation is provided, and this lead frame changes monoblock epoxy encapsulation in prior art into
the subregion fritterthe encapsulation of discrete type block, more can guarantee package quality, improves the reliability of EMC product.
To achieve these goals, technical scheme of the present invention is as follows, a kind of LED lead frame of discrete type EMC encapsulation, described lead frame comprises the lead frame body, be arranged on the leg zone of body bottom, described lead frame also comprises epoxy resin enclosed zone, cup end functional area and bottom heat radiation zone, it is characterized in that, described lead frame also comprises half-etched regions, described half-etched regions is imbedded epoxy resin enclosed zone, and in described LED lead frame surrounding, lead frame, the connected part in unit and intermediate flow channel are provided with half-etched regions.Improve copper alloy and epoxy resin and adhesion, can effectively prevent the Liquid Penetrant of the LED lead frame of EMC encapsulation, thereby improve the quality of product.
As a modification of the present invention, described half-etched regions forms step shape by etch process, imbeds epoxy resin enclosed zone.Half-etched regions forms the shape of step on copper alloy by etch process, seal rear half-etched regions and imbed in epoxy resin, improves copper alloy and epoxy resin and adhesion.
As a modification of the present invention, the tow sides of described lead frame are provided with intermediate flow channel.The present invention separately becomes the fritter encapsulation to middle useless part, lead mutually two encapsulation to transmit the resin ester material by intermediate flow channel from positive and negative two, so not only make epoxy resin and copper alloy diminish in conjunction with the bulk deformation of rear generation, and positive and negative two faces have runner, compare the resin demand minimizing that the encapsulation of bulk zone is used, more can reduce the flexural deformation problem produced after the bulk encapsulation.
As a modification of the present invention, described intermediate flow channel is provided with epoxy resin.Half-etched regions is used at intermediate flow channel back on the LED lead frame of EMC encapsulation, makes epoxy resin in the situation that do not affect back side planarization and can flow into the next one and seal zone.
As a modification of the present invention, described epoxy resin enclosed zone also comprises electrodeposited coating, and wherein electrodeposited coating is arranged on the both sides of lead frame.
As a modification of the present invention, described bottom heat radiation region division fin or hot channel.
1), whole apparatus structure is simple with respect to prior art, beneficial effect of the present invention is as follows:, cost is low; 2), this technical scheme makes lead frame monoblock epoxy encapsulation of the prior art change the discrete type block encapsulation of subregion fritter into, interval runner adopts the reversible passage of positive and negative, and runner is wrapped up on two sides, makes the framework bulk deformation after encapsulation less; 3) it is more smooth that original monoblock encapsulation full wafer product is compared in discrete type block encapsulation, be out of shape littlely, and the impact when the die bond routing is less, more can guarantee package quality, the reliability of raising EMC product.
The accompanying drawing explanation
The LED lead frame product structural representation that Fig. 1 is EMC encapsulation in prior art;
The LED lead frame product overall structure schematic diagram that Fig. 2 is discrete type EMC encapsulation of the present invention;
Fig. 2-1st, the side sectional view of Fig. 2.
Single product structure schematic diagram of LED lead frame that Fig. 3-1-3-5 is discrete design EMC encapsulation of the present invention;
In figure: 1, welding region, 2, epoxy resin enclosed zone, 3, cup end functional area, 4, the bottom heat radiation zone, 5, lead frame, 6, electrodeposited coating, 7, half-etched regions, 8, intermediate flow channel.
Embodiment
In order to deepen the understanding of the present invention and understanding, below in conjunction with the drawings and specific embodiments, the present invention is made further instructions and introduces.
embodiment 1:
Fig. 1 is the LED lead frame product structural representation of EMC encapsulation in prior art, as can be seen from the figure this product is the bulk encapsulating structure, and mid portion is useless part mostly, and the epoxy resin not only used is more, and the product cost of producing is higher, Performance Ratio is poor.
Fig. 2, Fig. 2-1, Fig. 3-1-Fig. 3-5th, the product structure schematic diagram that the present invention designs, a kind of LED lead frame of discrete type EMC encapsulation, described lead frame comprises the lead frame body, be arranged on the leg zone of body bottom, described lead frame also comprises epoxy resin enclosed regional 2, cup end functional area 3 and bottom heat radiation zone 4, described lead frame also comprises half-etched regions 7, described half-etched regions 7 imbeds epoxy resin enclosed regional 2, described LED lead frame surrounding, in lead frame, the connected part in unit and intermediate flow channel 8 are provided with half-etched regions 7.This structural design, improved the adhesion of copper alloy and epoxy resin, can effectively prevent the Liquid Penetrant of the LED lead frame of EMC encapsulation, thereby greatly improve the quality of product.
embodiment 2:
Referring to Fig. 2, Fig. 2-1, Fig. 3-1-Fig. 3-5, as a modification of the present invention, described partially etching area 7 territories form step shape by etch process, imbed epoxy resin enclosed regional 2.Half-etched regions 7 forms the shape of step on copper alloy by etch process, seal rear half-etched regions and imbed in epoxy resin, improves the adhesion of copper alloy and epoxy resin.All the other structures and advantage and embodiment 1 are identical.
embodiment 3:
Referring to Fig. 2, as a modification of the present invention, the tow sides of described lead frame are provided with intermediate flow channel 8.The present invention separately becomes the fritter encapsulation to middle useless part, lead mutually two encapsulation to transmit the resin ester material by intermediate flow channel 8 from positive and negative two, so not only make epoxy resin and copper alloy diminish in conjunction with the bulk deformation of rear generation, and positive and negative two faces have runner, compare the resin demand minimizing that the encapsulation of bulk zone is used, more can reduce the flexural deformation problem produced after the bulk encapsulation.All the other structures and advantage and embodiment 1 are identical.
embodiment 4:
Referring to Fig. 3, as a modification of the present invention, described intermediate flow channel 8 is provided with epoxy resin.Half-etched regions is used at intermediate flow channel back on the LED lead frame of EMC encapsulation, makes epoxy resin in the situation that do not affect back side planarization and can flow into the next one and seal zone.All the other structures and advantage and embodiment 1 are identical.
embodiment 5:
Referring to Fig. 2, as a modification of the present invention, described epoxy resin enclosed regional 2 also comprise electrodeposited coating 6, and wherein electrodeposited coating is arranged on the both sides of lead frame.All the other structures and advantage and embodiment 1 are identical.
embodiment 6:as a modification of the present invention, described bottom heat radiation region division fin or hot channel.Lead frame is dispelled the heat.All the other structures and advantage and embodiment 1 are identical.
The present invention can also be combined to form new execution mode by least one and embodiment 1 in embodiment 2,3,4,5,6 described technical characterictics.
It should be noted that above-described embodiment is only preferred embodiment of the present invention; be not used for limiting protection scope of the present invention; being equal to replacement or substituting of having done on the basis of the above all belongs to protection scope of the present invention, and protection scope of the present invention is as the criterion with claims.
Claims (6)
1. the LED lead frame of discrete type EMC encapsulation, described lead frame comprises the lead frame body, be arranged on the leg zone of body bottom, described lead frame also comprises epoxy resin enclosed zone, cup end functional area and bottom heat radiation zone, it is characterized in that, described lead frame also comprises half-etched regions, described half-etched regions is imbedded epoxy resin enclosed zone, and in described LED lead frame surrounding, lead frame, the connected part in unit and intermediate flow channel are provided with half-etched regions.
2. the LED lead frame of discrete type EMC encapsulation according to claim 1, is characterized in that, described half-etched regions forms step shape by etch process, imbeds epoxy resin enclosed zone.
3. the LED lead frame of discrete type EMC encapsulation according to claim 1 and 2, is characterized in that, the tow sides of described lead frame are provided with intermediate flow channel.
4. the LED lead frame of discrete type EMC encapsulation according to claim 1 and 2, is characterized in that, described intermediate flow channel is provided with epoxy resin.
5. the LED lead frame of discrete type EMC encapsulation according to claim 1 and 2, is characterized in that, described epoxy resin enclosed zone also comprises electrodeposited coating, and wherein electrodeposited coating is arranged on the both sides of lead frame.
6. the LED lead frame of discrete type EMC encapsulation according to claim 1 and 2, is characterized in that described bottom heat radiation region division fin or hot channel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310271402.0A CN103490001A (en) | 2013-07-01 | 2013-07-01 | Discrete type EMC packaged LED lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310271402.0A CN103490001A (en) | 2013-07-01 | 2013-07-01 | Discrete type EMC packaged LED lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103490001A true CN103490001A (en) | 2014-01-01 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310271402.0A Pending CN103490001A (en) | 2013-07-01 | 2013-07-01 | Discrete type EMC packaged LED lead frame |
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| Country | Link |
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| CN (1) | CN103490001A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109983548A (en) * | 2017-09-08 | 2019-07-05 | 新确有限公司 | Busbar assembly |
| EP3675142A4 (en) * | 2017-09-04 | 2021-04-07 | Suncall Corporation | Method for manufacturing bus bar assembly |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010009301A1 (en) * | 2000-01-24 | 2001-07-26 | Nec Corporation | Semiconductor devices having different package sizes made by using common parts |
| US6777788B1 (en) * | 2002-09-10 | 2004-08-17 | National Semiconductor Corporation | Method and structure for applying thick solder layer onto die attach pad |
| CN101404270A (en) * | 2007-10-03 | 2009-04-08 | 松下电器产业株式会社 | Semiconductor device, method of manufacturing the same, and semiconductor substrate |
| CN102569277A (en) * | 2010-12-28 | 2012-07-11 | 株式会社东芝 | LED package and manufacturing method thereof |
-
2013
- 2013-07-01 CN CN201310271402.0A patent/CN103490001A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010009301A1 (en) * | 2000-01-24 | 2001-07-26 | Nec Corporation | Semiconductor devices having different package sizes made by using common parts |
| US6777788B1 (en) * | 2002-09-10 | 2004-08-17 | National Semiconductor Corporation | Method and structure for applying thick solder layer onto die attach pad |
| CN101404270A (en) * | 2007-10-03 | 2009-04-08 | 松下电器产业株式会社 | Semiconductor device, method of manufacturing the same, and semiconductor substrate |
| CN102569277A (en) * | 2010-12-28 | 2012-07-11 | 株式会社东芝 | LED package and manufacturing method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3675142A4 (en) * | 2017-09-04 | 2021-04-07 | Suncall Corporation | Method for manufacturing bus bar assembly |
| CN109983548A (en) * | 2017-09-08 | 2019-07-05 | 新确有限公司 | Busbar assembly |
| EP3675141A4 (en) * | 2017-09-08 | 2021-04-07 | Suncall Corporation | Bus bar assembly |
| CN109983548B (en) * | 2017-09-08 | 2022-01-07 | 新确有限公司 | Bus bar assembly |
| CN114334233A (en) * | 2017-09-08 | 2022-04-12 | 新确有限公司 | Bus bar assembly |
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| AD01 | Patent right deemed abandoned | ||
| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20170111 |