CN103474438A - 薄膜晶体管阵列基板及液晶面板 - Google Patents
薄膜晶体管阵列基板及液晶面板 Download PDFInfo
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Abstract
本发明公开一种薄膜晶体管阵列基板及液晶面板。所述薄膜晶体管阵列基板包括:透明基板(20),包括非像素区域(202)和像素区域(201);多个薄膜晶体管(30),阵列排布在所述像素区域(201)内;对位标志(50),设置在所述非像素区域(202)内。本发明由于将对位标志上的绝缘材料层刻蚀去除掉,使得对位标志上不覆盖有任何绝缘材料层,可避免当对位标志在非像素区域内距离透明基板的边缘小于绝缘材料层保护区(即对位标志超出绝缘材料层保护区以外)时,第二层绝缘材料层和第四层绝缘材料层因膜厚不均匀而出现膜色差异而引起的对位差异。
Description
技术领域
本发明涉及液晶显示领域;更具体地讲,涉及一种薄膜晶体管阵列基板及液晶面板。
背景技术
在液晶面板的制造过程中,对位标志(Mark)具有非常重要的作用,例如,在进行精密测量仪器坐标定位和曝光机曝光对位时,均需要读取对位标志的位置;或者在薄膜晶体管阵列基板和彩色滤光片基板进行对盒组装时,也需要通过对位标志确认对盒位置。在目前的薄膜晶体管阵列基板的设计中,会在薄膜晶体管阵列基板外围设计对位标志,而大部分对位标志会使用栅极金属制作,而后在对位标志上沉积第二层绝缘薄膜(其所用材料例如可为SiNx)和第四层绝缘薄膜(其所用材料例如可为SiNx)。
薄膜晶体管阵列基板上的对位标志一般设计在玻璃基板的边缘,并且随着玻璃基板上的排版越来越紧凑,对位标志也越来越靠近玻璃基板边缘,当对位标志距离玻璃基板的边缘小于绝缘薄膜保护区时,该对位标志上的第二层绝缘薄膜和第四层绝缘薄膜会因膜厚不均匀而出现膜色差异,导致在后续的制程中抓取对位标志失败、机台报警、产品报废等现象。
发明内容
为了解决上述现有技术存在的问题,本发明的目的在于提供一种薄膜晶体管阵列基板,所述薄膜晶体管阵列基板包括:透明基板,包括非像素区域和像素区域;多个薄膜晶体管,阵列排布在所述像素区域内;对位标志,设置在所述非像素区域内。
此外,所述非像素区域还包括绝缘材料层,所述绝缘材料层设置在所述非像素区域中的除所述对位标志之外的区域上。
此外,所述非像素区域还包括绝缘材料层,所述绝缘材料层设置在所述非像素区域中的除所述对位标志以及紧邻所述对位标志的周边区域之外的区域上。
此外,所述非像素区域不包括绝缘层材料。
本发明的另一目的在于提供一种液晶面板,包括彩色滤光片基板、薄膜晶体管阵列基板以及夹设在所述彩色滤光片基板和所述薄膜晶体管阵列基板之间的液晶层,所述薄膜晶体管阵列基板包括:透明基板,包括非像素区域和像素区域;多个薄膜晶体管,阵列排布在所述像素区域内;对位标志,设置在所述非像素区域内。
此外,所述非像素区域还包括绝缘材料层,所述绝缘材料层设置在所述非像素区域中的除所述对位标志之外的区域上。
此外,所述非像素区域还包括绝缘材料层,所述绝缘材料层设置在所述非像素区域中的除所述对位标志以及紧邻所述对位标志的周边区域之外的区域上。
此外,所述非像素区域不包括绝缘层材料。
本发明由于将对位标志上的绝缘材料层刻蚀去除掉,使得对位标志上不覆盖有任何绝缘材料层,可避免当对位标志在非像素区域内距离透明基板的边缘小于绝缘材料层保护区(即对位标志超出绝缘材料层保护区以外)时,第二层绝缘材料层和第四层绝缘材料层因膜厚不均匀而出现膜色差异而引起的对位差异。
附图说明
图1是具有本发明的薄膜晶体管阵列基板的液晶面板的结构示意图。
图2是根据本发明的透明基板的示意图。
图3是根据本发明的实施例1的薄膜晶体管阵列基板的结构示意图。
图4是根据本发明的实施例2的薄膜晶体管阵列基板的结构示意图。
图5是根据本发明的实施例3的薄膜晶体管阵列基板的结构示意图。
具体实施方式
现在对本发明的实施例进行详细的描述,其示例表示在附图中,其中,相同的标号始终表示相同部件。下面通过参照附图对实施例进行描述以解释本发明。在附图中,为了清晰起见,可以夸大层和区域的厚度。在下面的描述中,为了避免公知结构和/或功能的不必要的详细描述所导致的本发明构思的混淆,可省略公知结构和/或功能的不必要的详细描述。
图1是具有本发明的薄膜晶体管阵列基板的液晶面板的结构示意图。
参照图1,具有本发明的薄膜晶体管阵列基板的液晶面板包括彩色滤光片基板11、薄膜晶体管阵列基板12以及夹设在彩色滤光片基板11和薄膜晶体管阵列基板12之间的液晶层13。
与薄膜晶体管阵列基板12相对设置的彩色滤光片基板11也称CF(ColorFilter)基板,其通常包括透明基板(诸如玻璃基板)以及设置在透明基板上的黑色矩阵图案、彩色光阻层(诸如红(R)、绿(G)和蓝(B)滤光片图案)以及配向层等。鉴于本发明中采用的彩色滤光片基板11与现有液晶面板中的彩色滤光片基板相同,因此其具体结构可参照相关的现有技术,在此不再赘述。
薄膜晶体管阵列基板12也称TFT(Thin Film Transistor)基板,其主要作用是向液晶层13中的液晶分子提供驱动电压,以使液晶分子进行偏转,从而使光线可穿过液晶层13,进而配合彩色滤光片基板11,使得液晶面板显示影像。具体请参考以下关于薄膜晶体管阵列基板12的实施例。
实施例1
图2是根据本发明的透明基板的示意图。图3是根据本发明的实施例1的薄膜晶体管阵列基板的结构示意图。
参照图2和图3,在本实施例中,薄膜晶体管阵列基板12包括透明基板(诸如玻璃基板)20以及设置在透明基板20上的多个薄膜晶体管(Thin FilmTransistor,TFT)30和取向膜40。
具体而言,透明基板20被分为像素区域201和非像素区域202。多个TFT30阵列排布设置在像素区域201内,其包括在透明基板20上依次形成的栅电极31、栅电极绝缘层(亦称第二层绝缘薄膜或第二层绝缘材料层)32、由非晶硅层33和欧姆接触层34组成的有源层、有源层上的源电极(金属层)35a和漏电极(金属层)35b、钝化层(亦称第四层绝缘薄膜或第四层绝缘材料层)36、位于漏电极35b上方并在钝化层36上形成的钝化层过孔37以及透明像素电极(即ITO(Indium Tin Oxide,氧化铟锡)电极)38;取向膜40设置在透明像素电极38上,但其不覆盖钝化层过孔37中的透明像素电极38。
在本实施例中,横截面图像呈现方形的对位标志50设置在非像素区域202内,其通常是利用形成TFT30的栅电极31的栅电极金属而制成;而在形成栅电极绝缘层32和钝化层36时,其形成栅电极绝缘层32所采用的绝缘材料(诸如SiNx等)以及形成钝化层36所用的绝缘材料(诸如SiNx等)会覆盖在对位标志50上。
为了去除掉覆盖在对位标志50上的绝缘材料,可在对位标志50上覆盖的绝缘材料层上涂布光刻胶,而后利用第一对位标志光罩对涂布的光刻胶进行曝光,在曝光过程中,可利用紫外线通过对位标志光罩后对涂布的光刻胶进行照射,光刻胶可对紫外线(ultra violet-ray,UV)感光,其受紫外线的照射可由中性变为酸性,而未受紫外线照射则继续保持中性。在本实施例中,在对位标志50上的光刻胶被照射,其余部分均未被照射。为了去除掉充分曝光后的光刻胶(即由中性变为酸性的光刻胶),可对曝光后的光刻胶进行显影,例如可采用碱性显影液将充分曝光后的光刻胶去除,进而将对位标志50上的绝缘材料层暴露。为了去除掉不需要的绝缘材料层(即暴露出的绝缘材料层),可采用例如干法刻蚀将不需要的绝缘材料层去除。接着将上述未被曝光的光刻胶剥离去除,进而形成在对位标志50上没有覆盖绝缘材料层,而在非像素区域202的除对位标志50之外的区域上覆盖有绝缘材料层,也就是说,绝缘材料层在对位标志50和非像素区域202的除对位标志50之外的区域上的覆盖特性相异,存在绝缘材料层在非像素区域202的覆盖区域和非覆盖区域之别。
此外,在本发明中,对位标志50的横截面图形的形状并不以图2所示为限,其横截面图形的形状也可呈现十字形状、三角形状、圆形形状等。
由于将对位标志50上的绝缘材料层刻蚀去除掉,使得对位标志50暴露出,其上不覆盖有任何绝缘材料层,可避免当对位标志50在非像素区域202内距离透明基板20的边缘小于绝缘材料层保护区(即对位标志50超出绝缘材料层保护区以外)时,第二层绝缘材料层和第四层绝缘材料层因膜厚不均匀而出现膜色差异而引起的对位差异。
实施例2
图4是根据本发明的实施例2的薄膜晶体管阵列基板的结构示意图。
参照图4,本实施例与实施例1不同之处在于:为了去除掉覆盖在对位标志50上的绝缘材料,可在对位标志50上覆盖的绝缘材料层上涂布光刻胶,而后利用第二对位标志光罩对涂布的光刻胶进行曝光,在曝光过程中,可利用紫外线通过对位标志光罩后对涂布的光刻胶进行照射,光刻胶可对紫外线(ultraviolet-ray,UV)感光,其受紫外线的照射可由中性变为酸性,而未受紫外线照射则继续保持中性。在本实施例中,在对位标志50上以及紧邻对位标志50的周边区域上的光刻胶被照射,其余部分均未被照射。为了去除掉充分曝光后的光刻胶(即由中性变为酸性的光刻胶),可对曝光后的光刻胶进行显影,例如可采用碱性显影液将充分曝光后的光刻胶去除,进而将对位标志50上以及紧邻对位标志50的周边区域上的绝缘材料层暴露。为了去除掉不需要的绝缘材料层(即暴露出的绝缘材料层),可采用例如干法刻蚀将不需要的绝缘材料层去除。接着将上述未被曝光的光刻胶剥离去除,进而形成在对位标志50上以及紧邻对位标志50的周边区域上没有覆盖绝缘材料层,而在非像素区域202的除对位标志50以及紧邻对位标志50的周边区域之外的区域上覆盖有绝缘材料层,也就是说,绝缘材料层在对位标志50以及紧邻对位标志50的周边区域和非像素区域202的除对位标志50以及紧邻对位标志50的周边区域之外的区域上的覆盖特性相异,存在绝缘材料层在非像素区域202的覆盖区域和非覆盖区域之别。
由于将对位标志50上以及紧邻对位标志50的周边区域上的绝缘材料层刻蚀去除掉,使得对位标志50暴露出,其上不覆盖有任何绝缘材料层,可避免当对位标志50在非像素区域202内距离透明基板20的边缘小于绝缘材料层保护区(即对位标志50超出绝缘材料层保护区以外)时,第二层绝缘材料层和第四层绝缘材料层因膜厚不均匀而出现膜色差异而引起的对位差异。
实施例3
图5是根据本发明的实施例3的薄膜晶体管阵列基板的结构示意图。
参照图5,本实施例与实施例1或实施例2的不同之处在于:为了去除掉覆盖在对位标志50上的绝缘材料,可在非像素区域202上涂布光刻胶,而后利用第三对位标志光罩对涂布的光刻胶进行曝光,在曝光过程中,可利用紫外线通过对位标志光罩后对涂布的光刻胶进行照射,光刻胶可对紫外线(ultraviolet-ray,UV)感光,其受紫外线的照射可由中性变为酸性,而未受紫外线照射则继续保持中性。在本实施例中,在非像素区域202上的光刻胶全部被照射。为了去除掉充分曝光后的光刻胶(即由中性变为酸性的光刻胶),可对曝光后的光刻胶进行显影,例如可采用碱性显影液将充分曝光后的光刻胶去除,进而将非像素区域202上的光刻胶全部去除,使得非像素区域202上的绝缘材料层全部暴露。为了去除掉不需要的绝缘材料层(即暴露出的绝缘材料层),可采用例如干法刻蚀将不需要的绝缘材料层去除,进而形成在整个非像素区域202均未覆盖有绝缘材料层,使得对位标志50暴露出,也就是说,绝缘材料层在非像素区域202上被完全去除掉。
由于将整个非像素区域202上的绝缘材料层刻蚀去除掉,使得对位标志50暴露出,可避免当对位标志50在非像素区域202内距离透明基板20的边缘小于绝缘材料层保护区(即对位标志50超出绝缘材料层保护区以外)时,第二层绝缘材料层和第四层绝缘材料层因膜厚不均匀而出现膜色差异而引起的对位差异。
尽管已经参照其示例性实施例具体显示和描述了本发明,但是本领域的技术人员应该理解,在不脱离权利要求所限定的本发明的精神和范围的情况下,可以对其进行形式和细节上的各种改变。
Claims (8)
1.一种薄膜晶体管阵列基板,其特征在于,所述薄膜晶体管阵列基板包括:
透明基板(20),包括非像素区域(202)和像素区域(201);
多个薄膜晶体管(30),阵列排布在所述像素区域(201)内;
对位标志(50),设置在所述非像素区域(202)内。
2.根据权利要求1所述的薄膜晶体管阵列基板,其特征在于,所述非像素区域(202)还包括绝缘材料层,所述绝缘材料层设置在所述非像素区域(202)中的除所述对位标志(50)之外的区域上。
3.根据权利要求1所述的薄膜晶体管阵列基板,其特征在于,所述非像素区域(202)还包括绝缘材料层,所述绝缘材料层设置在所述非像素区域(202)中的除所述对位标志(50)以及紧邻所述对位标志(50)的周边区域之外的区域上。
4.根据权利要求1所述的薄膜晶体管阵列基板,其特征在于,所述非像素区域(202)不包括绝缘层材料。
5.一种液晶面板,包括彩色滤光片基板(11)、薄膜晶体管阵列基板(12)以及夹设在所述彩色滤光片基板(11)和所述薄膜晶体管阵列基板(12)之间的液晶层(13),其特征在于,所述薄膜晶体管阵列基板(12)包括:
透明基板(20),包括非像素区域(202)和像素区域(201);
多个薄膜晶体管(30),阵列排布在所述像素区域(201)内;
对位标志(50),设置在所述非像素区域(202)内。
6.根据权利要求5所述的液晶面板,其特征在于,所述非像素区域(202)还包括绝缘材料层,所述绝缘材料层设置在所述非像素区域(202)中的除所述对位标志(50)之外的区域上。
7.根据权利要求5所述的液晶面板,其特征在于,所述非像素区域(202)还包括绝缘材料层,所述绝缘材料层设置在所述非像素区域(202)中的除所述对位标志(50)以及紧邻所述对位标志(50)的周边区域之外的区域上。
8.根据权利要求5所述的液晶面板,其特征在于,所述非像素区域(202)不包括绝缘层材料。
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CN107527923A (zh) * | 2017-08-18 | 2017-12-29 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板 |
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