CN103474368A - Method for detecting oxygen leakage of reaction chamber of annealing equipment - Google Patents
Method for detecting oxygen leakage of reaction chamber of annealing equipment Download PDFInfo
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- CN103474368A CN103474368A CN2012101847567A CN201210184756A CN103474368A CN 103474368 A CN103474368 A CN 103474368A CN 2012101847567 A CN2012101847567 A CN 2012101847567A CN 201210184756 A CN201210184756 A CN 201210184756A CN 103474368 A CN103474368 A CN 103474368A
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Abstract
The invention discloses a method for detecting oxygen leakage of a reaction chamber of annealing equipment. The method comprises the following steps: a wafer substrate is provided; an oxidation layer and a polycrystalline silicon layer are deposited on the wafer substrate; ion implantation is carried out on the wafer substrate; annealing treatment is carried out on the wafer substrate in the reaction chamber of the annealing equipment; resistance of the wafer substrate is measured after annealing and the resistance is defined as first resistance; under the same condition, resistance of the wafer substrate in the annealing equipment's reaction chamber without oxygen leakage is defined as second resistance; and the second resistance is compared with the first resistance. If the second resistance is greater than the first resistance, it is judged that the reaction chamber of the annealing equipment is leaking oxygen. According to the relationship between oxygen content and resistance of the wafer after annealing, whether the reaction chamber of the annealing equipment is leaking oxygen, the amount of leaked oxygen, distribution situation of oxygen in the reaction chamber and oxygen leakage position can be detected. As metallic element is not used, short circuit of a semiconductor device and pollution to the equipment are avoided, and costs are reduced.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of method of leaking oxygen in the annealing device reaction chamber that detects.
Background technology
Along with the development of manufacture of semiconductor, more and more stricter to the monitoring requirement of oxygen content in the annealing device reaction chamber, the leakage of oxygen can increase the contact resistance of wafer, and then makes semiconductor device failure.
In order to detect the leakage of oxygen in the annealing device reaction chamber, present means are plated metal element on wafer normally, then by annealing, metallic element and crystal column surface is reacted, and then by the variation of observing color, determines whether leak oxygen.For example: the Ti metal of deposition, it is normal that white wafer becomes golden yellow representative, if distribution of color is uneven and give a protective coating to metal objects, proof exists and leaks oxygen.But the introducing of metallic element can cause semiconductor device to cause component failure because of short circuit, and may cause other boards of cross pollution.And said method, can't confirm to leak in reaction chamber the position of oxygen and the amount of leaking oxygen.
Summary of the invention
In view of this, purpose of the present invention provides a kind of method of leaking oxygen in the annealing device reaction chamber that detects, and can avoid cross pollution and reduce costs.
For achieving the above object, the invention provides following technical scheme:
A kind of method of leaking oxygen in the annealing device reaction chamber that detects comprises:
Wafer substrate is provided;
Deposited oxide layer and polysilicon layer on wafer substrate;
Wafer substrate is carried out to Implantation;
In the annealing device reaction chamber, wafer substrate is carried out to annealing in process;
Measure the resistance of the wafer substrate after annealing, be defined as the first resistance;
Under equal conditions, defining the resistance of described wafer substrate in the annealing device reaction chamber without leaking oxygen is the second resistance;
The second resistance and the first resistance are compared, if the second resistance is greater than the first resistance, judges in the annealing device reaction chamber and leak oxygen.
As the present invention, improve further, described method also comprises: according to the relation of resistance and oxygen content, determine the corresponding oxygen content of described the first resistance, and then obtain the leakage oxygen amount of annealing device reaction chamber.
As the present invention, improve further, described method also comprises: the resistance of measuring the wafer substrate after annealing distributes, and according to the relation of described resistance distribution and resistance and oxygen content, determines the distribution of oxygen content in the annealing device reaction chamber.
As the present invention, improve further, described method also comprises: the resistance of measuring the wafer substrate after annealing distributes, distribute and determine the minimum resistance position on described wafer substrate according to described resistance, the position of the corresponding annealing device reaction chamber in described minimum resistance position is Lou oxygen position.
As the present invention, improve further, described wafer substrate is naked crystalline substance or the wafer that is injected with ion.
The invention also discloses a kind of method of leaking oxygen in the annealing device reaction chamber that detects, comprising:
Wafer substrate is provided;
Deposited oxide layer and polysilicon layer on wafer substrate;
Wafer substrate is carried out to Implantation;
In the annealing device reaction chamber, wafer substrate is carried out to annealing in process;
The resistance of measuring the wafer substrate after annealing distributes, and is defined as the first resistance and distributes;
Under equal conditions, define the resistance of described wafer substrate in the annealing device reaction chamber without leaking oxygen and be distributed as the second resistance distribution;
The second resistance is distributed and distributes and compare with the first resistance, if the first resistance distributes to distribute to compare with the second resistance, variation has occurred, judge in the annealing device reaction chamber and leak oxygen.
As the present invention, improve further, described method also comprises: according to the relation of described the first resistance distribution and resistance and oxygen content, determine the distribution of oxygen content in the annealing device reaction chamber.
As the present invention, improve further, described method also comprises: distribute and determine the minimum resistance position on described wafer substrate according to described the first resistance, the position of the corresponding annealing device reaction chamber in described minimum resistance position is Lou oxygen position.
As the present invention, improve further, described wafer substrate is naked crystalline substance or the wafer that is injected with ion.
Compared with prior art, the invention has the beneficial effects as follows: the relation according to the oxygen content in the annealing device reaction chamber with the rear wafer resistance of annealing, the annealing device reaction chamber be can detect and oxygen distribution and leakage oxygen position in oxygen, the amount of leaking oxygen, reaction chamber whether leaked, owing to not using metallic element, thereby avoided the short circuit of semiconductor device and, to the pollution of equipment, reduced cost.
The accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below will the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described, apparently, accompanying drawing relevant of the present invention in the following describes is only some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 detects the flow chart that leaks the oxygen method in the annealing device reaction chamber in first embodiment of the invention;
Fig. 2 detects the flow chart that leaks the oxygen method in the annealing device reaction chamber in second embodiment of the invention;
Fig. 3 measures the flow chart that leaks the method for oxygen amount in the annealing device reaction chamber in the embodiment of the present invention;
Fig. 4 detects the flow chart of oxygen content location mode in the annealing device reaction chamber in the embodiment of the present invention;
Fig. 5 is the resistance distribution map of the wafer substrates after the present invention anneals;
Fig. 6 detects the flow chart that leaks the oxygen location method in the annealing device reaction chamber in the embodiment of the present invention.
Embodiment
Therefore passing into oxygen can increase the diffusion velocity of foreign ion along crystal boundary greatly, can cause the raising of impurity activation rate when oxygen content increases, thus charge carrier increase the decline that causes resistance.
Based on above-mentioned principle, the present invention is by deposited oxide layer and polysilicon layer on wafer substrate, Implantation, and the resistance after then anneal by observations comes in the detection reaction cavity whether to leak the amount of oxygen, leakage oxygen and the position of leakage oxygen.
Ginseng table 1, adopt same wafer substrate, under identical ion implanting conditions, annealing temperature, passes into different oxygen contents in the annealing device reaction cavity to observe the situation of change of wafer substrate.As can be seen from Table 1, in the situation that do not pass into oxygen, the resistance of wafer substrate is very high, passing into micro-oxygen, for example during 3sccm, just can cause the resistance of wafer substrate to decline to a great extent, find that when oxygen content continues to improve resistance continues to descend, and then can judge: the oxygen content in the annealing device reaction cavity is higher, and the resistance of the wafer substrate that obtains is less.When the data in table 1 are enough improved, can and then infer the content of oxygen in the annealing device reaction cavity according to the resistance of wafer substrate.
Table 1
| Oxygen content | Wafer substrate resistance/unit are |
| 0sccm | 254.7 |
| 3sccm | 186 |
| 8sccm | 140 |
| 10sccm | 132.5 |
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is described in detail, obviously, described embodiment is only the present invention's part embodiment, rather than whole embodiment.Embodiment based in the present invention, the every other embodiment that those of ordinary skills obtain under the prerequisite of not making creative work, belong to the scope of protection of the invention.
Shown in ginseng Fig. 1, first embodiment of the invention discloses a kind of method of leaking oxygen in the annealing device reaction chamber that detects, and specifically comprises:
S1, provide wafer substrate;
S2, on wafer substrate deposited oxide layer and polysilicon layer;
S3, wafer substrate is carried out to Implantation;
S4, in the annealing device reaction chamber, wafer substrate is carried out to annealing in process;
The resistance of the wafer substrate after s5, measurement annealing, be defined as the first resistance;
S6, under equal conditions, defining the resistance of described wafer substrate in the annealing device reaction chamber without leaking oxygen is the second resistance;
S7, the second resistance and the first resistance are compared, if the second resistance is greater than the first resistance, judges in the annealing device reaction chamber and leak oxygen.
Leakage oxygen in the present invention, refer in normal use procedure, due to problems such as annealing device reaction chamber sealing differences, and causes extraneous air to leak in reaction chamber, owing to containing oxygen in air, so can have influence on the resistance of wafer substrate in reaction chamber.
In step s6, equal conditions refers to the condition identical with step s1 ~ s4 that adopt, comprise the wafer substrate that adopts same size, identical ion implanting conditions, identical annealing temperature etc., unique different be the annealing device reaction chamber adopted without leaking oxygen, preferably, this place adopts the same specification without the annealing device reaction chamber that leaks oxygen (no oxygen in reaction chamber) and the annealing device reaction chamber in step s4.The second resistance is as standard value, by itself and the first resistance value ratio, can be easy to reflect in step s4 the situation of change of oxygen in the annealing device reaction cavity: if the first resistance is less than the second resistance, can judges in the annealing device reaction cavity and enter oxygen; If the first resistance equals the second resistance, can judge that the annealing device reaction chamber does not leak oxygen.
The first above-mentioned resistance and the second resistance can refer to the resistance of a certain ad-hoc location on the mean value, wafer substrate of resistance on wafer substrate, the resistance on unit are etc.
Determine in the annealing device reaction chamber and whether leak oxygen, can also distribute and be judged by the resistance of the rear wafer substrate of annealing, with normal resistance, distribute and compare, if abnormal can be judged as in reaction chamber oxygen occurs to leak.Concrete grammar is as Fig. 2.
Shown in ginseng Fig. 2, second embodiment of the invention discloses a kind of method of leaking oxygen in the annealing device reaction chamber that detects, and specifically comprises:
S11, provide wafer substrate;
S12, on wafer substrate deposited oxide layer and polysilicon layer;
S13, wafer substrate is carried out to Implantation;
S14, in the annealing device reaction chamber, wafer substrate is carried out to annealing in process;
S15, the resistance distribution of measuring the wafer substrate after annealing, be defined as the first resistance and distribute;
S16, under equal conditions, define the resistance of described wafer substrate in the annealing device reaction chamber without leaking oxygen and be distributed as the second resistance and distribute;
S17, the second resistance is distributed and to distribute and to compare with the first resistance, if the first resistance distributes to distribute to compare with the second resistance, variation has occurred, judge in the annealing device reaction chamber and leak oxygen.
In view of the relation of wafer substrate resistance with oxygen content, we can set up a database, and to reflect the corresponding wafer substrate resistance of different oxygen contents, the wafer substrate resistance at this place is preferably the resistance on unit are.We use this database, can obtain above-mentioned the first resistance corresponding oxygen content in database, and then obtain the leakage oxygen amount of annealing device reaction chamber, shown in concrete grammar ginseng Fig. 3; According to this database, the resistance of our wafer substrate after can also annealing by measurement distributes, and then obtains the distribution of oxygen content in the annealing device reaction chamber and leak the oxygen position, and concrete grammar is joined respectively shown in Fig. 4 and Fig. 6.
Shown in ginseng Fig. 3, the embodiment of the invention also discloses a kind of method of leaking the oxygen amount in the annealing device reaction chamber that detects, specifically comprise:
S21, provide wafer substrate;
S22, on wafer substrate deposited oxide layer and polysilicon layer;
S23, wafer substrate is carried out to Implantation;
S24, in the annealing device reaction chamber, wafer substrate is carried out to annealing in process;
The resistance of the wafer substrate after s25, measurement annealing, be defined as the first resistance;
S26, according to the relation of resistance and oxygen content, determine the corresponding oxygen content of described the first resistance, and then obtain the leakage oxygen amount of annealing device reaction chamber.
Shown in ginseng Fig. 4, the embodiment of the invention also discloses and detect the method that in the annealing device reaction chamber, oxygen content distributes, specifically comprise:
S31, provide wafer substrate;
S32, on wafer substrate deposited oxide layer and polysilicon layer;
S33, wafer substrate is carried out to Implantation;
S34, in the annealing device reaction chamber, wafer substrate is carried out to annealing in process;
S35, the resistance distribution of measuring the wafer substrate after annealing, be defined as the first resistance and distribute;
S36, according to the relation of described the first resistance distribution and resistance and oxygen content, determine the distribution of oxygen content in the annealing device reaction chamber.
In step s35, the concrete grammar of resistance distribution measuring can be: define a plurality of resistance bolcks on described wafer substrate, measure respectively the resistance of described resistance bolck.For example: adopt 4 sonde methods, survey 49 points, and then the distribution of measuring resistance.
Shown in ginseng Fig. 5, it is the resistance distribution map of the wafer substrates after annealing.
In Fig. 5 ,+mean the high zone of resistance ,-mean the low zone of resistance, thick lines mean the average zone, the more representatives of the broad-brush contour level of distance from average more away from.In same wafer substrate, can cause the different resistance region of the very poor formation of overall electrical resistance uniformity owing near the valve place, leaking oxygen, the oxygen enrichment zone foreign ion diffusion high at oxygen content is very fast, formation low-resistance zone, the regional foreign ion expansion low at oxygen forms the high resistant zone more slowly, therefore can judge by the variation of resistance the content of regional oxygen in reaction cavity fully, the position that while is the highest according to resistance, determine the position of leaking oxygen, leak oxygen method for determining position please refer to the drawing 6.
Shown in ginseng Fig. 6, the embodiment of the invention also discloses a kind of method of leaking the oxygen position in the annealing device reaction chamber that detects, specifically comprise:
S41, provide wafer substrate;
S42, on wafer substrate deposited oxide layer and polysilicon layer;
S43, wafer substrate is carried out to Implantation;
S44, in the annealing device reaction chamber, wafer substrate is carried out to annealing in process;
S45, the resistance distribution of measuring the wafer substrate after annealing, be defined as the first resistance and distribute;
S46, according to described the first resistance, distribute to determine the minimum resistance position on described wafer substrate, the position of the corresponding annealing device reaction chamber in described minimum resistance position is Lou oxygen position.
Step s45, the concrete grammar of resistance distribution measuring can be: define a plurality of resistance bolcks on described wafer substrate, measure respectively the resistance of described resistance bolck.For example: adopt 4 sonde methods, survey 49 points, and then the distribution of measuring resistance.
In detection method of the present invention (comprise and judge whether leak oxygen, leakage oxygen amount, oxygen content distribution and leak the oxygen position), wafer substrate can be naked crystalline substance, can be also the wafer that is injected with ion.Therefore, we can reclaim used wafer substrate (wafer that Implantation is crossed), and then carry out the deposition of oxide layer and polysilicon layer, thereby greatly reduce testing cost.
In sum, the invention has the beneficial effects as follows: the relation according to the oxygen content in the annealing device reaction chamber with the rear wafer resistance of annealing, the annealing device reaction chamber be can detect and oxygen distribution and leakage oxygen position in oxygen, the amount of leaking oxygen, reaction chamber whether leaked, owing to not using metallic element, thereby avoided the short circuit of semiconductor device and, to the pollution of equipment, reduced cost.
To those skilled in the art, obviously the invention is not restricted to the details of above-mentioned example embodiment, and in the situation that do not deviate from spirit of the present invention or essential characteristic, can realize the present invention with other concrete form.Therefore, no matter from which point, all should regard embodiment as exemplary, and be nonrestrictive, scope of the present invention is limited by claims rather than above-mentioned explanation, therefore is intended to include in the present invention dropping on the implication that is equal to important document of claim and all changes in scope.Any Reference numeral in claim should be considered as limit related claim.
In addition, be to be understood that, although this specification is described according to execution mode, but not each execution mode only comprises an independently technical scheme, this narrating mode of specification is only for clarity sake, those skilled in the art should make specification as a whole, and the technical scheme in each embodiment also can, through appropriate combination, form other execution modes that it will be appreciated by those skilled in the art that.
Claims (9)
1. one kind is detected the method for leaking oxygen in the annealing device reaction chamber, it is characterized in that, comprising:
Wafer substrate is provided;
Deposited oxide layer and polysilicon layer on wafer substrate;
Wafer substrate is carried out to Implantation;
In the annealing device reaction chamber, wafer substrate is carried out to annealing in process;
Measure the resistance of the wafer substrate after annealing, be defined as the first resistance;
Under equal conditions, defining the resistance of described wafer substrate in the annealing device reaction chamber without leaking oxygen is the second resistance;
The second resistance and the first resistance are compared, if the second resistance is greater than the first resistance, judges in the annealing device reaction chamber and leak oxygen.
2. leak the method for oxygen in detection annealing device reaction chamber according to claim 1, it is characterized in that, also comprise: according to the relation of resistance and oxygen content, determine the corresponding oxygen content of described the first resistance, and then obtain the leakage oxygen amount of annealing device reaction chamber.
3. leak the method for oxygen in detection annealing device reaction chamber according to claim 1, it is characterized in that, also comprise: the resistance of measuring the wafer substrate after annealing distributes, and according to the relation of described resistance distribution and resistance and oxygen content, determines the distribution of oxygen content in the annealing device reaction chamber.
4. leak the method for oxygen in detection annealing device reaction chamber according to claim 1, it is characterized in that, also comprise: the resistance of measuring the wafer substrate after annealing distributes, distribute and determine the minimum resistance position on described wafer substrate according to described resistance, the position of the corresponding annealing device reaction chamber in described minimum resistance position is Lou oxygen position.
5. leak the method for oxygen in detection annealing device reaction chamber according to claim 1, it is characterized in that, described wafer substrate is naked crystalline substance or the wafer that is injected with ion.
6. one kind is detected the method for leaking oxygen in the annealing device reaction chamber, it is characterized in that, comprising:
Wafer substrate is provided;
Deposited oxide layer and polysilicon layer on wafer substrate;
Wafer substrate is carried out to Implantation;
In the annealing device reaction chamber, wafer substrate is carried out to annealing in process;
The resistance of measuring the wafer substrate after annealing distributes, and is defined as the first resistance and distributes;
Under equal conditions, define the resistance of described wafer substrate in the annealing device reaction chamber without leaking oxygen and be distributed as the second resistance distribution;
The second resistance is distributed and distributes and compare with the first resistance, if the first resistance distributes to distribute to compare with the second resistance, variation has occurred, judge in the annealing device reaction chamber and leak oxygen.
7. leak the method for oxygen in detection annealing device reaction chamber according to claim 6, it is characterized in that, also comprise: according to the relation of described the first resistance distribution and resistance and oxygen content, determine the distribution of oxygen content in the annealing device reaction chamber.
8. leak the method for oxygen in detection annealing device reaction chamber according to claim 6, it is characterized in that, also comprise: distribute and determine the minimum resistance position on described wafer substrate according to described the first resistance, the position of the corresponding annealing device reaction chamber in described minimum resistance position is Lou oxygen position.
9. leak the method for oxygen in detection annealing device reaction chamber according to claim 6, it is characterized in that, described wafer substrate is naked crystalline substance or the wafer that is injected with ion.
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| CN107910278A (en) * | 2017-11-15 | 2018-04-13 | 上海华力微电子有限公司 | A kind of device of the poiysilicon deposition process process oxygen concentration of monitoring in real time |
| CN108520909A (en) * | 2018-04-18 | 2018-09-11 | 英利能源（中国）有限公司 | The oxidative deactivation method and terminal device of silicon chip of solar cell |
| CN111524825A (en) * | 2020-04-30 | 2020-08-11 | 华虹半导体(无锡)有限公司 | Method for detecting content of chlorine in oxide film |
| CN114689243A (en) * | 2020-12-30 | 2022-07-01 | 长鑫存储技术有限公司 | Method for detecting furnace tube equipment airtightness |
| US11788923B2 (en) | 2020-12-30 | 2023-10-17 | Changxin Memory Technologies, Inc. | Method for detecting gas tightness of furnace tube device |
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| CN107910278A (en) * | 2017-11-15 | 2018-04-13 | 上海华力微电子有限公司 | A kind of device of the poiysilicon deposition process process oxygen concentration of monitoring in real time |
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