CN108520909A - The oxidative deactivation method and terminal device of silicon chip of solar cell - Google Patents
The oxidative deactivation method and terminal device of silicon chip of solar cell Download PDFInfo
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- CN108520909A CN108520909A CN201810350244.0A CN201810350244A CN108520909A CN 108520909 A CN108520909 A CN 108520909A CN 201810350244 A CN201810350244 A CN 201810350244A CN 108520909 A CN108520909 A CN 108520909A
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- solar cell
- silicon chip
- preset quantity
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- voltage value
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 227
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 227
- 239000010703 silicon Substances 0.000 title claims abstract description 227
- 230000009849 deactivation Effects 0.000 title claims abstract description 145
- 230000001590 oxidative effect Effects 0.000 title claims abstract description 145
- 238000000034 method Methods 0.000 title claims abstract description 128
- 238000012545 processing Methods 0.000 claims abstract description 53
- 238000002161 passivation Methods 0.000 claims abstract description 29
- 238000012797 qualification Methods 0.000 claims abstract description 13
- 238000004590 computer program Methods 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 14
- 238000005245 sintering Methods 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 13
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 210000004027 cell Anatomy 0.000 description 188
- 230000006870 function Effects 0.000 description 11
- 230000005611 electricity Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- CMWTZPSULFXXJA-VIFPVBQESA-N naproxen Chemical compound C1=C([C@H](C)C(O)=O)C=CC2=CC(OC)=CC=C21 CMWTZPSULFXXJA-VIFPVBQESA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 238000004422 calculation algorithm Methods 0.000 description 1
- 230000010485 coping Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention is suitable for technical field of solar batteries, and the oxidative deactivation method and terminal device, this method for providing a kind of silicon chip of solar cell include：By oxidative deactivation technique oxidative deactivation processing is carried out on the surface of the silicon chip of solar cell of the first preset quantity；Obtain the first theoretical voltage value of the silicon chip of solar cell of first preset quantity after oxidized Passivation Treatment；Obtain the second theoretical voltage value of the silicon chip of solar cell of the second preset quantity；Judge whether the oxidative deactivation technique is qualified according to the first theoretical voltage value and the second theoretical voltage value；In the oxidative deactivation technique qualification, oxidative deactivation processing is carried out on the surface of the silicon chip of solar cell in addition to the silicon chip of solar cell of first preset quantity and the silicon chip of solar cell of second preset quantity by the oxidative deactivation technique.The present invention can improve the yields of solar cell.
Description
Technical field
The invention belongs to technical field of solar batteries more particularly to a kind of oxidative deactivation methods of silicon chip of solar cell
And terminal device.
Background technology
Solar cell is a kind of semiconductor devices converted solar energy into electrical energy.The yields of solar cell refers to too
The ratio of the quantity and the theoretical output quantity of input material of the solar cell non-defective unit prepared on positive energy production line for manufacturing battery.Non-defective unit
Rate is to weigh the important indicator of manufacture of solar cells line quality.Oxidative deactivation technique is the important work in manufacture of solar cells
Skill step.Traditional oxidative deactivation method is that the silicon chip on manufacture of solar cells line is directly carried out oxidative deactivation processing, this
The yields that kind method frequently results in solar cell is low.
Invention content
In view of this, the oxidative deactivation method and terminal an embodiment of the present invention provides a kind of silicon chip of solar cell are set
It is standby, to solve the problems, such as that solar cell yields is low in the prior art.
The first aspect of the embodiment of the present invention provides the oxidative deactivation method of silicon chip of solar cell, including：
By oxidative deactivation technique oxidative deactivation processing is carried out on the surface of the silicon chip of solar cell of the first preset quantity；
Obtain the first theoretical voltage of the silicon chip of solar cell of first preset quantity after oxidized Passivation Treatment
Value；
Obtain the second theoretical voltage value of the silicon chip of solar cell of the second preset quantity；
Judge whether the oxidative deactivation technique closes according to the first theoretical voltage value and the second theoretical voltage value
Lattice；
In the oxidative deactivation technique qualification, by the oxidative deactivation technique except first preset quantity too
The surface of positive energy cell silicon chip and the silicon chip of solar cell outside the silicon chip of solar cell of second preset quantity carries out oxygen
Change Passivation Treatment.
Optionally, the of the silicon chip of solar cell for obtaining first preset quantity after oxidized Passivation Treatment
One theoretical voltage value, including：
Pass through the table of the silicon chip of solar cell of first preset quantity of the coating process after oxidized Passivation Treatment
Face carries out plated film；
The silicon chip of solar cell of first preset quantity after plated film is sintered by sintering process；
Obtain the first theoretical voltage value of the silicon chip of solar cell of sintered first preset quantity.
Optionally, the second theoretical voltage value of the silicon chip of solar cell for obtaining the second preset quantity, including：
By coating process plated film is carried out on the surface of the silicon chip of solar cell of second preset quantity；
The silicon chip of solar cell of second preset quantity after plated film is sintered by sintering process；
Obtain the second theoretical voltage value of the silicon chip of solar cell of sintered second preset quantity.
Optionally, described that the oxidative deactivation is judged according to the first theoretical voltage value and the second theoretical voltage value
Whether technique is qualified, including：
Judge whether the first theoretical voltage value is greater than or equal to the second theoretical voltage value, and described first is theoretical
Whether voltage value is more than predetermined threshold value；
It is described in the oxidative deactivation technique qualification, by the oxidative deactivation technique except first preset quantity
Silicon chip of solar cell and second preset quantity silicon chip of solar cell outside silicon chip of solar cell surface into
The processing of row oxidative deactivation, including：
It is greater than or equal to the second theoretical voltage value, and the first theoretical voltage value in the first theoretical voltage value
When more than the predetermined threshold value, by the oxidative deactivation technique except first preset quantity silicon chip of solar cell and
The surface of silicon chip of solar cell outside the silicon chip of solar cell of second preset quantity carries out oxidative deactivation processing.
Optionally, further include：
Obtain the square resistance of the silicon chip of solar cell of third preset quantity；
Judge the square resistance of the silicon chip of solar cell of the third preset quantity whether in preset resistance threshold range
It is interior；
The third preset quantity silicon chip of solar cell square resistance in the preset resistance threshold range
When, execution is described to be carried out on the surface of the silicon chip of solar cell of the first preset quantity at oxidative deactivation by oxidative deactivation technique
Reason.
Optionally, the oxidative deactivation technique is wet-oxygen oxidation technique or dry-oxygen oxidation technique.
The second aspect of the embodiment of the present invention provides a kind of oxidative deactivation device of silicon chip of solar cell, including：
First processing module, for passing through oxidative deactivation technique on the surface of the silicon chip of solar cell of the first preset quantity
Carry out oxidative deactivation processing；
First acquisition module, the solar cell silicon for obtaining first preset quantity after oxidized Passivation Treatment
First theoretical voltage value of piece；
Second acquisition module, the second theoretical voltage value of the silicon chip of solar cell for obtaining the second preset quantity；
Judgment module, for judging that the oxidation is blunt according to the first theoretical voltage value and the second theoretical voltage value
Whether chemical industry skill is qualified；
Second processing module is used in the oxidative deactivation technique qualification, by the oxidative deactivation technique except institute
State the solar-electricity outside the silicon chip of solar cell of the first preset quantity and the silicon chip of solar cell of second preset quantity
The surface of pond silicon chip carries out oxidative deactivation processing.
The third aspect of the embodiment of the present invention provides a kind of oxidative deactivation terminal device of silicon chip of solar cell, including
Memory, processor and it is stored in the computer program that can be run in the memory and on the processor, the place
Reason device realizes the oxidation of the silicon chip of solar cell as described in first aspect of the embodiment of the present invention when executing the computer program
The step of passivating method.
The fourth aspect of the embodiment of the present invention provides a kind of computer readable storage medium, the computer-readable storage
Media storage has computer program, is realized such as first aspect of the embodiment of the present invention institute when computer program is executed by processor
The step of oxidative deactivation method for the silicon chip of solar cell stated.
5th aspect of the embodiment of the present invention provides a kind of preparation method of solar cell, including as the present invention is implemented
The oxidative deactivation method of silicon chip of solar cell described in example first aspect.
Existing advantageous effect is the embodiment of the present invention compared with prior art：It is default first by oxidative deactivation technique
The surface of the silicon chip of solar cell of quantity carries out oxidative deactivation processing, in the table of the silicon chip of solar cell of the first preset quantity
Face forms passivation layer, and obtains the first theoretical voltage value of the silicon chip of solar cell of the first preset quantity, the second preset quantity
Silicon chip of solar cell handled without oxidative deactivation, directly acquire the second of the silicon chip of solar cell of the second preset quantity
Then theoretical voltage value judges whether oxidative deactivation technique is qualified according to the first theoretical voltage value and the second theoretical voltage value,
When oxidative deactivation technique qualification, preset in the silicon chip of solar cell and second except the first preset quantity by oxidative deactivation technique
The surface of silicon chip of solar cell outside the silicon chip of solar cell of quantity carries out oxidative deactivation processing, to solve due to oxidation
The low problem of solar cell yields caused by passivation technology, improves the yields of solar cell.
Description of the drawings
It to describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, the accompanying drawings in the following description be only the present invention some
Embodiment for those of ordinary skill in the art without having to pay creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is the implementation process signal of the oxidative deactivation method for the silicon chip of solar cell that the embodiment of the present invention one provides
Figure；
Fig. 2 is the structural schematic diagram of the oxidative deactivation device of silicon chip of solar cell provided by Embodiment 2 of the present invention；
Fig. 3 is the structural representation of the oxidative deactivation terminal device of silicon chip of solar cell provided by Embodiment 2 of the present invention
Figure.
Specific implementation mode
In being described below, for illustration and not for limitation, it is proposed that such as tool of particular system structure, technology etc
Body details, to understand thoroughly the embodiment of the present invention.However, it will be clear to one skilled in the art that there is no these specific
The present invention can also be realized in the other embodiments of details.In other situations, it omits to well-known system, device, electricity
The detailed description of road and method, in case unnecessary details interferes description of the invention.
In order to illustrate technical solutions according to the invention, illustrated below by specific embodiment.
Embodiment one
In embodiments of the present invention, the oxidative deactivation method of silicon chip of solar cell is applied to the production line of solar cell
In.
Referring to FIG. 1, the oxidative deactivation method of silicon chip of solar cell includes the following steps：
Step S101 is aoxidized by oxidative deactivation technique on the surface of the silicon chip of solar cell of the first preset quantity
Passivation Treatment.
In embodiments of the present invention, it through making herbs into wool and polishes back surface field successively for producing the silicon chip of solar cell, prepare just
Surface launching pole, back-etching, ion implanting simultaneously clean annealing etc. after processing steps, before carrying out oxidative deactivation technique, in solar energy
The silicon chip of solar cell of the silicon chip of solar cell and the second preset quantity of the first preset quantity is taken in cell silicon chip respectively.One
In kind realization method, the silicon chip of solar cell and the second present count of the first preset quantity are taken at random in silicon chip of solar cell
The silicon chip of solar cell of amount.In another realization method, the first preset quantity and the second preset quantity are equal, are N, and N is
Integer more than 1.For ease of description, the silicon chip of solar cell of the first preset quantity is known as the first silicon chip, second is preset
The silicon chip of solar cell of quantity is known as the second silicon chip.Silicon chip of solar cell is divided into N groups, is then taken at random respectively in every group
A piece of first silicon chip and a piece of second silicon chip, for example, by 1000 silicon chip of solar cell be equally divided into 10 groups, every group respectively with
Machine takes a piece of first silicon chip and a piece of second silicon chip.
In embodiments of the present invention, by oxidative deactivation technique the silicon chip of solar cell of the first preset quantity upper table
Face and lower surface are respectively formed passivation layer, and passivation layer is silicon oxide layer.Oxidative deactivation technique is wet-oxygen oxidation technique or dry-oxygen oxidation
Technique.The embodiment of the present invention uses traditional oxidative deactivation technique, and oxidative deactivation technique itself is not as the embodiment of the present invention
It improves, details are not described herein.
Step S102 obtains the first of the silicon chip of solar cell of first preset quantity after oxidized Passivation Treatment
Theoretical voltage value.
In embodiments of the present invention, the first theoretical voltage value is the theory electricity of the silicon chip of solar cell of the first preset quantity
Pressure value (implied-Voc), theoretical voltage value are obtained by sinton device measurings, for characterizing the sun not metallized
The level for the open-circuit voltage that energy battery can reach, theoretical voltage value is bigger, shows the solar cell after metallization
Open-circuit voltage is higher.
Optionally, the specific implementation of step S102 is：By coating process after oxidized Passivation Treatment described in
The surface of the silicon chip of solar cell of first preset quantity carries out plated film；It is pre- to described first after plated film by sintering process
If the silicon chip of solar cell of quantity is sintered；Obtain the silicon chip of solar cell of sintered first preset quantity
First theoretical voltage value.
In embodiments of the present invention, it is plated by the surface of the silicon chip of solar cell of the first preset quantity of coating process
Film grows antireflective film in the upper and lower surface of the passivation layer of the silicon chip of solar cell of the first preset quantity, antireflective film
Material is silicon nitride.Preferably, coating process is plasma-enhanced chemical depositing operation (Plasma Enhanced
Chemical Vapor Deposition, PECVD).The sintering temperature of sintering process is more than 850 degrees Celsius.
Step S103 obtains the second theoretical voltage value of the silicon chip of solar cell of the second preset quantity.
In embodiments of the present invention, the second theoretical voltage value is the theoretical voltage of the second preset quantity silicon chip of solar cell
Value.The silicon chip of solar cell of second preset quantity directly passes through sinton device measurings without oxidative deactivation process
Second theoretical voltage value of the silicon chip of solar cell of the second preset quantity.
Optionally, the specific implementation of step S103 is：By coating process second preset quantity the sun
The surface of energy cell silicon chip carries out plated film；By sintering process to the solar cell of second preset quantity after plated film
Silicon chip is sintered；Obtain the second theoretical voltage value of the silicon chip of solar cell of sintered second preset quantity.
In the present embodiment, the coating process and sintering process used is used with above-mentioned steps S102 specific implementations
Coating process it is identical with sintering process, details are not described herein again.
Step S104 judges the oxidative deactivation work according to the first theoretical voltage value and the second theoretical voltage value
Whether skill is qualified.
Optionally, the specific implementation of step S104 is：Judge whether the first theoretical voltage value is greater than or equal to
The second theoretical voltage value, and whether the first theoretical voltage value is more than predetermined threshold value.
In embodiments of the present invention, it is greater than or equal to the second theoretical voltage value in the first theoretical voltage value, and
When the first theoretical voltage value is more than predetermined threshold value, then oxidative deactivation technique is qualified；Otherwise, oxidative deactivation technique is unqualified.
Predetermined threshold value is 0.6mV to 0.8mV, it is preferred that predetermined threshold value 0.65mV.First theoretical voltage value is relative to the second theoretical electricity
Pressure value is higher, then the passivation that explanation is formed by oxidative deactivation technique on the surface of the silicon chip of solar cell of the first preset quantity
Layer, which is more advantageous to, is passivated silicon chip of solar cell surface, and the open-circuit voltage values of the solar cell of preparation are bigger.
Step S105, in the oxidative deactivation technique qualification, by the oxidative deactivation technique except described first pre-
If the silicon chip of solar cell of quantity and the silicon chip of solar cell outside the silicon chip of solar cell of second preset quantity
Surface carries out oxidative deactivation processing.
In embodiments of the present invention, the specific implementation of step S105 is：Be more than in the first theoretical voltage value or
It is blunt by the oxidation equal to the second theoretical voltage value, and when the first theoretical voltage value is more than the predetermined threshold value
Silicon chip of solar cell of the chemical industry skill in silicon chip of solar cell and second preset quantity except first preset quantity
The surface of outer silicon chip of solar cell carries out oxidative deactivation processing.
In embodiments of the present invention, in oxidative deactivation technique qualification, by oxidative deactivation technique except the first present count
The surface of the silicon chip of solar cell of amount and the silicon chip of solar cell outside the silicon chip of solar cell of the second preset quantity carries out
Oxidative deactivation processing.When oxidative deactivation technique is unqualified, silicon chip of solar cell is done over again recycling.
Optionally, the method further includes：Obtain the square resistance of the silicon chip of solar cell of third preset quantity；Judge
Whether the square resistance of the silicon chip of solar cell of the third preset quantity is in preset resistance threshold range；In the third
When the square resistance of the silicon chip of solar cell of preset quantity is in the preset resistance threshold range, pass through oxidation described in execution
Passivation technology carries out oxidative deactivation processing on the surface of the silicon chip of solar cell of the first preset quantity.
In embodiments of the present invention, before step S101, third preset quantity is taken in silicon chip of solar cell first
Then silicon chip of solar cell is tested for example, taking 10 silicon chip of solar cell at random in 1000 silicon chip of solar cell
The square resistance of the silicon chip of solar cell of third preset quantity, in the square electricity of the silicon chip of solar cell of third preset quantity
When resistance is in preset resistance threshold range, then step S101 is executed, in the square of the silicon chip of solar cell of third preset quantity
When resistance is not in preset resistance threshold range, silicon chip of solar cell is done over again recycling.Preset resistance threshold value is 15 ohm
To 25 ohm.
The embodiment of the present invention is carried out by oxidative deactivation technique on the surface of the silicon chip of solar cell of the first preset quantity
Oxidative deactivation processing forms passivation layer on the surface of the silicon chip of solar cell of the first preset quantity, and obtains the first present count
First theoretical voltage value of the silicon chip of solar cell of amount, the silicon chip of solar cell of the second preset quantity is without oxidative deactivation
Processing, directly acquires the second theoretical voltage value of the silicon chip of solar cell of the second preset quantity, then according to the first theoretical electricity
Pressure value and the second theoretical voltage value judge whether oxidative deactivation technique is qualified, blunt by aoxidizing in oxidative deactivation technique qualification
Chemical industry skill is in the sun in addition to the silicon chip of solar cell of the first preset quantity and the silicon chip of solar cell of the second preset quantity
The surface of energy cell silicon chip carries out oxidative deactivation processing, to solve due to solar cell non-defective unit caused by oxidative deactivation technique
The low problem of rate, improves the yields of solar cell.
It should be understood that the size of the serial number of each step is not meant that the order of the execution order in above-described embodiment, each process
Execution sequence should be determined by its function and internal logic, the implementation process without coping with the embodiment of the present invention constitutes any limit
It is fixed.
Embodiment two
Referring to FIG. 2, second embodiment of the present invention provides a kind of oxidative deactivation devices of silicon chip of solar cell, including：
First processing module 201, for by oxidative deactivation technique first preset quantity silicon chip of solar cell
Surface carries out oxidative deactivation processing；
First acquisition module 202, the solar-electricity for obtaining first preset quantity after oxidized Passivation Treatment
First theoretical voltage value of pond silicon chip；
Second acquisition module 203, the second theoretical voltage value of the silicon chip of solar cell for obtaining the second preset quantity；
Judgment module 204, for judging the oxygen according to the first theoretical voltage value and the second theoretical voltage value
Whether qualified change passivation technology；
Second processing module 205, in the oxidative deactivation technique qualification, by the oxidative deactivation technique except
Solar energy outside the silicon chip of solar cell of first preset quantity and the silicon chip of solar cell of second preset quantity
The surface of cell silicon chip carries out oxidative deactivation processing.
Optionally, first acquisition module 202 is specifically used for passing through institute of the coating process after oxidized Passivation Treatment
The surface for stating the silicon chip of solar cell of the first preset quantity carries out plated film；
The silicon chip of solar cell of first preset quantity after plated film is sintered by sintering process；
Obtain the first theoretical voltage value of the silicon chip of solar cell of sintered first preset quantity.
Optionally, second acquisition module 203 be specifically used for by coating process second preset quantity too
The surface of positive energy cell silicon chip carries out plated film；
The silicon chip of solar cell of second preset quantity after plated film is sintered by sintering process；
Obtain the second theoretical voltage value of the silicon chip of solar cell of sintered second preset quantity.
Optionally, the judgment module 204 is specifically used for judging whether the first theoretical voltage value is greater than or equal to institute
The second theoretical voltage value is stated, and whether the first theoretical voltage value is more than predetermined threshold value.
Further, the Second processing module 205 is specifically used for being greater than or equal to institute in the first theoretical voltage value
It states the second theoretical voltage value, and when the first theoretical voltage value is more than the predetermined threshold value, passes through the oxidative deactivation technique
In addition to the silicon chip of solar cell of first preset quantity and the silicon chip of solar cell of second preset quantity too
The surface of positive energy cell silicon chip carries out oxidative deactivation processing.
Optionally, described device further includes：
Square resistance test module, the square resistance of the silicon chip of solar cell for obtaining third preset quantity；
Judge the square resistance of the silicon chip of solar cell of the third preset quantity whether in preset resistance threshold range
It is interior.
Further, the first processing module 201 is for the silicon chip of solar cell in the third preset quantity
When square resistance is in the preset resistance threshold range, by oxidative deactivation technique the first preset quantity solar cell
The surface of silicon chip carries out oxidative deactivation processing.
First processing module of the embodiment of the present invention 201 by oxidative deactivation technique the first preset quantity solar cell
The surface of silicon chip carries out oxidative deactivation processing, and passivation layer is formed on the surface of the silicon chip of solar cell of the first preset quantity, the
One acquisition module 202 obtains the first theoretical voltage value of the silicon chip of solar cell of the first preset quantity, the second acquisition module 203
The second theoretical voltage value of the silicon chip of solar cell of the second preset quantity is obtained, judgment module 204 is according to the first theoretical voltage
Value and the second theoretical voltage value judge whether oxidative deactivation technique is qualified, and Second processing module 205 is qualified in oxidative deactivation technique
When, by oxidative deactivation technique silicon chip of solar cell and the second preset quantity except the first preset quantity solar cell
The surface of silicon chip of solar cell outside silicon chip carries out oxidative deactivation processing, to solve due to caused by oxidative deactivation technique too
The low problem of positive energy battery yields, improves the yields of solar cell.
Embodiment three
Fig. 3 is the schematic diagram of the oxidative deactivation terminal device for the silicon chip of solar cell that one embodiment of the invention provides.Such as
Shown in Fig. 3, the oxidative deactivation terminal device 3 of the silicon chip of solar cell of the embodiment includes：Processor 301, memory 302 with
And it is stored in the computer program 303 that can be run in the memory 302 and on the processor 301.The processor 301
The step in the oxidative deactivation embodiment of the method for above-mentioned each silicon chip of solar cell is realized when executing the computer program 303
Such as step S101 to S105 shown in FIG. 1 suddenly,.Alternatively, the processor 301 is realized when executing the computer program 303
The function of each module/unit in above-mentioned each device embodiment, for example, module 201 to 205 shown in Fig. 2 function.
Illustratively, the computer program 303 can be divided into one or more module/units, it is one or
Multiple module/the units of person are stored in the memory 302, and are executed by the processor 301, to complete the present invention.Institute
It can be the series of computation machine program instruction section that can complete specific function, the instruction segment to state one or more module/units
For describing implementation procedure of the computer program 303 in the oxidative deactivation terminal device 3 of the silicon chip of solar cell.
For example, the computer program 303 can be divided into first processing module, the first acquisition module, the second acquisition module, judge
Module and Second processing module, each module concrete function are as follows：
First processing module, for passing through oxidative deactivation technique on the surface of the silicon chip of solar cell of the first preset quantity
Carry out oxidative deactivation processing；
First acquisition module, the solar cell silicon for obtaining first preset quantity after oxidized Passivation Treatment
First theoretical voltage value of piece；
Second acquisition module, the second theoretical voltage value of the silicon chip of solar cell for obtaining the second preset quantity；
Judgment module, for judging that the oxidation is blunt according to the first theoretical voltage value and the second theoretical voltage value
Whether chemical industry skill is qualified；
Second processing module is used in the oxidative deactivation technique qualification, by the oxidative deactivation technique except institute
State the solar-electricity outside the silicon chip of solar cell of the first preset quantity and the silicon chip of solar cell of second preset quantity
The surface of pond silicon chip carries out oxidative deactivation processing.
Optionally, first acquisition module is specifically used for described the after oxidized Passivation Treatment by coating process
The surface of the silicon chip of solar cell of one preset quantity carries out plated film；
The silicon chip of solar cell of first preset quantity after plated film is sintered by sintering process；
Obtain the first theoretical voltage value of the silicon chip of solar cell of sintered first preset quantity.
Optionally, second acquisition module is specifically used for the solar energy in second preset quantity by coating process
The surface of cell silicon chip carries out plated film；
The silicon chip of solar cell of second preset quantity after plated film is sintered by sintering process；
Obtain the second theoretical voltage value of the silicon chip of solar cell of sintered second preset quantity.
Optionally, whether the judgment module is specifically used for judging the first theoretical voltage value more than or equal to described the
Two theoretical voltage values, and whether the first theoretical voltage value is more than predetermined threshold value.
Further, the Second processing module is specifically used for being greater than or equal to described the in the first theoretical voltage value
Two theoretical voltage values, and the first theoretical voltage value be more than the predetermined threshold value when, by the oxidative deactivation technique except
Solar energy outside the silicon chip of solar cell of first preset quantity and the silicon chip of solar cell of second preset quantity
The surface of cell silicon chip carries out oxidative deactivation processing.
Optionally, described device further includes：
Square resistance test module, the square resistance of the silicon chip of solar cell for obtaining third preset quantity；
Judge the square resistance of the silicon chip of solar cell of the third preset quantity whether in preset resistance threshold range
It is interior.
Further, the first processing module is used for the square in the silicon chip of solar cell of the third preset quantity
When resistance is in the preset resistance threshold range, by oxidative deactivation technique the first preset quantity silicon chip of solar cell
Surface carry out oxidative deactivation processing.
The oxidative deactivation terminal device 3 of the silicon chip of solar cell can be desktop PC, notebook, palm electricity
The computing devices such as brain and cloud server.The oxidative deactivation terminal device of the silicon chip of solar cell may include, but not only limit
In processor 301, memory 302.It will be understood by those skilled in the art that Fig. 3 be only silicon chip of solar cell oxidation it is blunt
The example for changing terminal device 3, does not constitute the restriction to the oxidative deactivation terminal device 3 of silicon chip of solar cell, may include
Than illustrating more or fewer components, certain components or different components, such as the silicon chip of solar cell are either combined
Oxidative deactivation terminal device can also include input-output equipment, network access equipment, bus etc..
Alleged processor 301 can be central processing unit (Central Processing Unit, CPU), can also be
Other general processors, digital signal processor (Digital Signal Processor, DSP), application-specific integrated circuit
(Application Specific Integrated Circuit, ASIC), ready-made programmable gate array (Field-
Programmable Gate Array, FPGA) either other programmable logic device, discrete gate or transistor logic,
Discrete hardware components etc..General processor can be microprocessor or the processor can also be any conventional processor
Deng.
The memory 302 can be the storage inside list of the oxidative deactivation terminal device 3 of the silicon chip of solar cell
Member, for example, the oxidative deactivation terminal device 3 of silicon chip of solar cell hard disk or memory.The memory 302 can also be institute
State the External memory equipment of the oxidative deactivation terminal device 3 of silicon chip of solar cell, such as the oxygen of the silicon chip of solar cell
Change the plug-in type hard disk being equipped on passivation terminal device 3, intelligent memory card (Smart Media Card, SMC), secure digital
(Secure Digital, SD) blocks, flash card (Flash Card) etc..Further, the memory 302 can also both include
The internal storage unit of the oxidative deactivation terminal device 3 of the silicon chip of solar cell also includes External memory equipment.It is described to deposit
Reservoir 302 is used to store its needed for the oxidative deactivation terminal device of the computer program and the silicon chip of solar cell
His program and data.The memory 302 can be also used for temporarily storing the data that has exported or will export.
It is apparent to those skilled in the art that for convenience of description and succinctly, only with above-mentioned each work(
Can unit, module division progress for example, in practical application, can be as needed and by above-mentioned function distribution by different
Functional unit, module are completed, i.e., the internal structure of described device are divided into different functional units or module, more than completion
The all or part of function of description.Each functional unit, module in embodiment can be integrated in a processing unit, also may be used
It, can also be above-mentioned integrated during two or more units are integrated in one unit to be that each unit physically exists alone
The form that hardware had both may be used in unit is realized, can also be realized in the form of SFU software functional unit.In addition, each function list
Member, the specific name of module are also only to facilitate mutually distinguish, the protection domain being not intended to limit this application.Above system
The specific work process of middle unit, module, can refer to corresponding processes in the foregoing method embodiment, and details are not described herein.
In the above-described embodiments, it all emphasizes particularly on different fields to the description of each embodiment, is not described in detail or remembers in some embodiment
The part of load may refer to the associated description of other embodiments.
Those of ordinary skill in the art may realize that lists described in conjunction with the examples disclosed in the embodiments of the present disclosure
Member and algorithm steps can be realized with the combination of electronic hardware or computer software and electronic hardware.These functions are actually
It is implemented in hardware or software, depends on the specific application and design constraint of technical solution.Professional technician
Each specific application can be used different methods to achieve the described function, but this realization is it is not considered that exceed
The scope of the present invention.
In embodiment provided by the present invention, it should be understood that disclosed device/terminal device and method, it can be with
It realizes by another way.For example, device described above/terminal device embodiment is only schematical, for example, institute
The division of module or unit is stated, only a kind of division of logic function, formula that in actual implementation, there may be another division manner, such as
Multiple units or component can be combined or can be integrated into another system, or some features can be ignored or not executed.Separately
A bit, shown or discussed mutual coupling or direct-coupling or communication connection can be by some interfaces, device
Or INDIRECT COUPLING or the communication connection of unit, can be electrical, machinery or other forms.
The unit illustrated as separating component may or may not be physically separated, aobvious as unit
The component shown may or may not be physical unit, you can be located at a place, or may be distributed over multiple
In network element.Some or all of unit therein can be selected according to the actual needs to realize the mesh of this embodiment scheme
's.
In addition, each functional unit in each embodiment of the present invention can be integrated in a processing unit, it can also
It is that each unit physically exists alone, it can also be during two or more units be integrated in one unit.Above-mentioned integrated list
The form that hardware had both may be used in member is realized, can also be realized in the form of SFU software functional unit.
If the integrated module/unit be realized in the form of SFU software functional unit and as independent product sale or
In use, can be stored in a computer read/write memory medium.Based on this understanding, the present invention realizes above-mentioned implementation
All or part of flow in example method, can also instruct relevant hardware to complete, the meter by computer program
Calculation machine program can be stored in a computer readable storage medium, the computer program when being executed by processor, it can be achieved that on
The step of stating each embodiment of the method.Wherein, the computer program includes computer program code, the computer program generation
Code can be source code form, object identification code form, executable file or certain intermediate forms etc..The computer-readable medium
May include：Any entity or device, recording medium, USB flash disk, mobile hard disk, magnetic of the computer program code can be carried
Dish, CD, computer storage, read-only memory (ROM, Read-Only Memory), random access memory (RAM,
Random Access Memory), electric carrier signal, telecommunication signal and software distribution medium etc..It should be noted that described
The content that computer-readable medium includes can carry out increasing appropriate according to legislation in jurisdiction and the requirement of patent practice
Subtract, such as in certain jurisdictions, according to legislation and patent practice, computer-readable medium does not include electric carrier signal and electricity
Believe signal.
Example IV
The embodiment of the present invention four provides a kind of preparation method of solar cell, includes as described in the embodiment of the present invention one
The oxidative deactivation method of silicon chip of solar cell, and with advantageous effect possessed by the embodiment of the present invention one.
Embodiment described above is merely illustrative of the technical solution of the present invention, rather than its limitations；Although with reference to aforementioned reality
Applying example, invention is explained in detail, it will be understood by those of ordinary skill in the art that：It still can be to aforementioned each
Technical solution recorded in embodiment is modified or equivalent replacement of some of the technical features；And these are changed
Or replace, the spirit and scope for various embodiments of the present invention technical solution that it does not separate the essence of the corresponding technical solution should all
It is included within protection scope of the present invention.
Claims (10)
1. a kind of oxidative deactivation method of silicon chip of solar cell, which is characterized in that including：
By oxidative deactivation technique oxidative deactivation processing is carried out on the surface of the silicon chip of solar cell of the first preset quantity；
Obtain the first theoretical voltage value of the silicon chip of solar cell of first preset quantity after oxidized Passivation Treatment；
Obtain the second theoretical voltage value of the silicon chip of solar cell of the second preset quantity；
Judge whether the oxidative deactivation technique is qualified according to the first theoretical voltage value and the second theoretical voltage value；
In the oxidative deactivation technique qualification, by the oxidative deactivation technique in the solar energy except first preset quantity
The surface of cell silicon chip and the silicon chip of solar cell outside the silicon chip of solar cell of second preset quantity aoxidize blunt
Change is handled.
2. the oxidative deactivation method of silicon chip of solar cell as described in claim 1, which is characterized in that the acquisition is oxidized
First theoretical voltage value of the silicon chip of solar cell of first preset quantity after Passivation Treatment, including：
By the surface of the silicon chip of solar cell of first preset quantity of the coating process after oxidized Passivation Treatment into
Row plated film；
The silicon chip of solar cell of first preset quantity after plated film is sintered by sintering process；
Obtain the first theoretical voltage value of the silicon chip of solar cell of sintered first preset quantity.
3. the oxidative deactivation method of silicon chip of solar cell as described in claim 1, which is characterized in that described to obtain second in advance
If the second theoretical voltage value of the silicon chip of solar cell of quantity, including：
By coating process plated film is carried out on the surface of the silicon chip of solar cell of second preset quantity；
The silicon chip of solar cell of second preset quantity after plated film is sintered by sintering process；
Obtain the second theoretical voltage value of the silicon chip of solar cell of sintered second preset quantity.
4. the oxidative deactivation method of silicon chip of solar cell as described in claim 1, which is characterized in that described according to described
One theoretical voltage value and the second theoretical voltage value judge whether the oxidative deactivation technique is qualified, including：
Judge whether the first theoretical voltage value is greater than or equal to the second theoretical voltage value, and first theoretical voltage
Whether value is more than predetermined threshold value；
It is described in the oxidative deactivation technique qualification, by the oxidative deactivation technique except first preset quantity too
The surface of positive energy cell silicon chip and the silicon chip of solar cell outside the silicon chip of solar cell of second preset quantity carries out oxygen
Change Passivation Treatment, including：
It is greater than or equal to the second theoretical voltage value in the first theoretical voltage value, and the first theoretical voltage value is more than
When the predetermined threshold value, by the oxidative deactivation technique in silicon chip of solar cell except first preset quantity and described
The surface of silicon chip of solar cell outside the silicon chip of solar cell of second preset quantity carries out oxidative deactivation processing.
5. the oxidative deactivation method of silicon chip of solar cell as described in claim 1, which is characterized in that further include：
Obtain the square resistance of the silicon chip of solar cell of third preset quantity；
Judge the square resistance of the silicon chip of solar cell of the third preset quantity whether in preset resistance threshold range；
The third preset quantity silicon chip of solar cell square resistance in the preset resistance threshold range when, hold
Row is described to carry out oxidative deactivation processing step by oxidative deactivation technique on the surface of the silicon chip of solar cell of the first preset quantity
Suddenly.
6. the oxidative deactivation method of silicon chip of solar cell as described in claim 1, which is characterized in that the oxidative deactivation work
Skill is wet-oxygen oxidation technique or dry-oxygen oxidation technique.
7. a kind of oxidative deactivation device of silicon chip of solar cell, which is characterized in that including：
First processing module, for being carried out on the surface of the silicon chip of solar cell of the first preset quantity by oxidative deactivation technique
Oxidative deactivation processing；
First acquisition module, the silicon chip of solar cell for obtaining first preset quantity after oxidized Passivation Treatment
First theoretical voltage value；
Second acquisition module, the second theoretical voltage value of the silicon chip of solar cell for obtaining the second preset quantity；
Judgment module, for judging the oxidative deactivation work according to the first theoretical voltage value and the second theoretical voltage value
Whether skill is qualified；
Second processing module, in the oxidative deactivation technique qualification, by the oxidative deactivation technique except described the
Solar cell silicon outside the silicon chip of solar cell of one preset quantity and the silicon chip of solar cell of second preset quantity
The surface of piece carries out oxidative deactivation processing.
8. a kind of oxidative deactivation terminal device of silicon chip of solar cell, including memory, processor and it is stored in described deposit
In reservoir and the computer program that can run on the processor, which is characterized in that the processor executes the computer
It is realized when program such as the step of any one of claim 1 to 6 the method.
9. a kind of computer readable storage medium, the computer-readable recording medium storage has computer program, feature to exist
In when the computer program is executed by processor the step of any one of such as claim 1 to 6 of realization the method.
10. a kind of preparation method of solar cell, which is characterized in that including claim 1 to 6 any one of them solar energy
The oxidative deactivation method of cell silicon chip.
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