CN108520909B - Oxidation passivation method for solar cell silicon wafer and terminal equipment - Google Patents
Oxidation passivation method for solar cell silicon wafer and terminal equipment Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 234
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 234
- 239000010703 silicon Substances 0.000 title claims abstract description 234
- 238000002161 passivation Methods 0.000 title claims abstract description 190
- 230000003647 oxidation Effects 0.000 title claims abstract description 176
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 176
- 238000000034 method Methods 0.000 title claims abstract description 149
- 235000012431 wafers Nutrition 0.000 claims abstract description 233
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- 238000005245 sintering Methods 0.000 claims description 27
- 238000012545 processing Methods 0.000 claims description 25
- 238000004590 computer program Methods 0.000 claims description 19
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- 239000011248 coating agent Substances 0.000 claims description 8
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
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- CMWTZPSULFXXJA-VIFPVBQESA-N naproxen Chemical compound C1=C([C@H](C)C(O)=O)C=CC2=CC(OC)=CC=C21 CMWTZPSULFXXJA-VIFPVBQESA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Abstract
The invention is suitable for the technical field of solar cells, and provides an oxidation passivation method of a solar cell silicon wafer and terminal equipment, wherein the method comprises the following steps: carrying out oxidation passivation treatment on the surfaces of the first preset number of solar cell silicon wafers through an oxidation passivation process; acquiring a first theoretical voltage value of the first preset number of solar cell silicon wafers after oxidation passivation treatment; acquiring a second theoretical voltage value of a second preset number of solar cell silicon wafers; judging whether the oxidation passivation process is qualified or not according to the first theoretical voltage value and the second theoretical voltage value; and when the oxidation passivation process is qualified, performing oxidation passivation treatment on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process. The invention can improve the yield of the solar cell.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to an oxidation passivation method for a solar cell silicon wafer and terminal equipment.
Background
A solar cell is a semiconductor device that converts solar energy into electrical energy. The yield of the solar cell refers to the ratio of the number of good solar cells prepared on a solar cell production line to the theoretical output number of input materials. The yield is an important index for measuring the quality of a solar cell production line. The oxidative passivation process is an important process step in the production of solar cells. The traditional oxidation passivation method is to directly perform oxidation passivation treatment on silicon wafers on a solar cell production line, and the method often causes low yield of solar cells.
Disclosure of Invention
In view of this, the embodiment of the invention provides an oxidation passivation method for a solar cell silicon wafer and a terminal device, so as to solve the problem of low yield of a solar cell in the prior art.
The first aspect of the embodiments of the present invention provides an oxidation passivation method for a solar cell silicon wafer, including:
carrying out oxidation passivation treatment on the surfaces of the first preset number of solar cell silicon wafers through an oxidation passivation process;
acquiring a first theoretical voltage value of the first preset number of solar cell silicon wafers after oxidation passivation treatment;
acquiring a second theoretical voltage value of a second preset number of solar cell silicon wafers;
judging whether the oxidation passivation process is qualified or not according to the first theoretical voltage value and the second theoretical voltage value;
and when the oxidation passivation process is qualified, performing oxidation passivation treatment on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process.
Optionally, the obtaining a first theoretical voltage value of the first preset number of solar cell silicon wafers after the oxidation passivation treatment includes:
coating the surfaces of the first preset number of solar cell silicon wafers subjected to oxidation passivation treatment by a coating process;
sintering the solar cell silicon wafers of the first preset number after being coated with the film by a sintering process;
and acquiring a first theoretical voltage value of the sintered solar cell silicon wafers of the first preset number.
Optionally, the obtaining a second theoretical voltage value of a second preset number of solar cell silicon wafers includes:
coating the surfaces of the second preset number of solar cell silicon wafers by a coating process;
sintering the solar cell silicon wafers of the second preset number after being coated with the films by a sintering process;
and acquiring a second theoretical voltage value of the sintered solar cell silicon wafers of the second preset number.
Optionally, the determining whether the oxidation passivation process is qualified according to the first theoretical voltage value and the second theoretical voltage value includes:
judging whether the first theoretical voltage value is greater than or equal to the second theoretical voltage value and whether the first theoretical voltage value is greater than a preset threshold value;
when the oxidation passivation process is qualified, performing oxidation passivation treatment on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process, wherein the oxidation passivation process comprises the following steps:
and when the first theoretical voltage value is greater than or equal to the second theoretical voltage value and the first theoretical voltage value is greater than the preset threshold value, performing oxidation passivation treatment on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process.
Optionally, the method further includes:
acquiring square resistors of a third preset number of solar cell silicon wafers;
judging whether the square resistances of the solar cell silicon wafers of the third preset number are within a preset resistance threshold range;
and when the square resistance of the third preset number of solar cell silicon wafers is within the preset resistance threshold value range, performing oxidation passivation treatment on the surfaces of the first preset number of solar cell silicon wafers through an oxidation passivation process.
Optionally, the oxidation passivation process is a wet oxygen oxidation process or a dry oxygen oxidation process.
A second aspect of the embodiments of the present invention provides an oxidation passivation apparatus for a solar cell silicon wafer, including:
the first processing module is used for carrying out oxidation passivation processing on the surfaces of a first preset number of solar cell silicon wafers through an oxidation passivation process;
the first obtaining module is used for obtaining a first theoretical voltage value of the solar cell silicon wafers of the first preset number after oxidation passivation treatment;
the second acquisition module is used for acquiring second theoretical voltage values of a second preset number of solar cell silicon wafers;
the judging module is used for judging whether the oxidation passivation process is qualified or not according to the first theoretical voltage value and the second theoretical voltage value;
and the second processing module is used for performing oxidation passivation treatment on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process when the oxidation passivation process is qualified.
A third aspect of the embodiments of the present invention provides an oxidation passivation terminal device for a solar cell silicon wafer, including a memory, a processor, and a computer program stored in the memory and executable on the processor, where the processor implements the steps of the oxidation passivation method for a solar cell silicon wafer according to the first aspect of the embodiments of the present invention when executing the computer program.
A fourth aspect of the embodiments of the present invention provides a computer-readable storage medium, which stores a computer program, which when executed by a processor, implements the steps of the method for oxidation passivation of a solar cell silicon wafer according to the first aspect of the embodiments of the present invention.
A fifth aspect of the embodiments of the present invention provides a method for manufacturing a solar cell, including a method for oxidation passivation of a solar cell silicon wafer according to the first aspect of the embodiments of the present invention.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: performing oxidation passivation treatment on the surfaces of a first preset number of solar cell silicon wafers through an oxidation passivation process, forming passivation layers on the surfaces of the first preset number of solar cell silicon wafers, obtaining a first theoretical voltage value of the first preset number of solar cell silicon wafers, directly obtaining a second theoretical voltage value of the second preset number of solar cell silicon wafers without oxidation passivation treatment on the second preset number of solar cell silicon wafers, judging whether the oxidation passivation process is qualified according to the first theoretical voltage value and the second theoretical voltage value, and performing oxidation passivation treatment on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process when the oxidation passivation process is qualified, so as to solve the problem of low yield of the solar cell caused by the oxidation passivation process, the yield of the solar cell is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
Fig. 1 is a schematic flow chart of an implementation of a method for oxidation passivation of a solar cell silicon wafer according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of an oxidation passivation apparatus for a solar cell silicon wafer according to a second embodiment of the present invention;
fig. 3 is a schematic structural diagram of an oxidation passivation terminal device for a solar cell silicon wafer according to a second embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth, such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to explain the technical means of the present invention, the following description will be given by way of specific examples.
Example one
In the embodiment of the invention, the oxidation passivation method of the solar cell silicon wafer is applied to the production line of the solar cell.
Referring to fig. 1, the oxidation passivation method for the solar cell silicon wafer includes the following steps:
and S101, performing oxidation passivation treatment on the surfaces of the first preset number of solar cell silicon wafers through an oxidation passivation process.
In the embodiment of the invention, after the silicon wafers for producing the solar cell are sequentially subjected to the process steps of texturing, polishing a back surface field, preparing a front emitter, etching a back surface, injecting ions, cleaning, annealing and the like, and before an oxidation passivation process is carried out, a first preset number of solar cell silicon wafers and a second preset number of solar cell silicon wafers are respectively taken from the solar cell silicon wafers. In one implementation, a first preset number of solar cell silicon wafers and a second preset number of solar cell silicon wafers are randomly selected from among the solar cell silicon wafers. In another implementation manner, the first preset number and the second preset number are equal and are both N, and N is an integer greater than 1. For convenience of description, the first predetermined number of solar cell silicon wafers will be referred to as a first silicon wafer, and the second predetermined number of solar cell silicon wafers will be referred to as a second silicon wafer. The solar cell silicon wafers are divided into N groups, and then a first silicon wafer and a second silicon wafer are respectively randomly taken from each group, for example, 1000 solar cell silicon wafers are averagely divided into 10 groups, and a first silicon wafer and a second silicon wafer are respectively randomly taken from each group.
In the embodiment of the invention, passivation layers are formed on the upper surfaces and the lower surfaces of the first preset number of solar cell silicon wafers through an oxidation passivation process, and the passivation layers are silicon oxide layers. The oxidation passivation process is a wet oxygen oxidation process or a dry oxygen oxidation process. The embodiment of the invention adopts a traditional oxidation passivation process, and the oxidation passivation process itself is not taken as an improvement of the embodiment of the invention, and is not described again here.
Step S102, obtaining a first theoretical voltage value of the solar cell silicon wafers of the first preset number after oxidation passivation treatment.
In the embodiment of the invention, the first theoretical voltage value is a theoretical voltage value (actual-Voc) of a first preset number of solar cell silicon wafers, the theoretical voltage value is obtained by sinton equipment measurement and is used for representing the level of open-circuit voltage which can be reached by solar cells without metallization, and the larger the theoretical voltage value is, the higher the open-circuit voltage of the solar cells after metallization is.
Optionally, the specific implementation manner of step S102 is: coating the surfaces of the first preset number of solar cell silicon wafers subjected to oxidation passivation treatment by a coating process; sintering the solar cell silicon wafers of the first preset number after being coated with the film by a sintering process; and acquiring a first theoretical voltage value of the sintered solar cell silicon wafers of the first preset number.
In the embodiment of the invention, the surfaces of the first preset number of solar cell silicon wafers are plated through a plating process, antireflection films are grown on the upper surfaces and the lower surfaces of the passivation layers of the first preset number of solar cell silicon wafers, and the antireflection films are made of silicon nitride. Preferably, the coating process is a Plasma enhanced chemical Deposition (PECVD) process. The sintering temperature of the sintering process is more than 850 ℃.
Step 103, acquiring a second theoretical voltage value of a second preset number of solar cell silicon wafers.
In the embodiment of the invention, the second theoretical voltage value is a theoretical voltage value of a second preset number of solar cell silicon wafers. And directly measuring a second theoretical voltage value of the second preset number of solar cell silicon wafers through a sinton device without oxidation passivation process treatment.
Optionally, the specific implementation manner of step S103 is: coating the surfaces of the second preset number of solar cell silicon wafers by a coating process; sintering the solar cell silicon wafers of the second preset number after being coated with the films by a sintering process; and acquiring a second theoretical voltage value of the sintered solar cell silicon wafers of the second preset number.
In this embodiment, the coating process and the sintering process used are the same as those used in the specific implementation manner of step S102, and are not described herein again.
And step S104, judging whether the oxidation passivation process is qualified or not according to the first theoretical voltage value and the second theoretical voltage value.
Optionally, the specific implementation manner of step S104 is: and judging whether the first theoretical voltage value is greater than or equal to the second theoretical voltage value or not, and whether the first theoretical voltage value is greater than a preset threshold value or not.
In the embodiment of the invention, when the first theoretical voltage value is greater than or equal to the second theoretical voltage value and the first theoretical voltage value is greater than a preset threshold value, the oxidation passivation process is qualified; otherwise, the oxidation passivation process is unqualified. The preset threshold value is 0.6mV to 0.8mV, and preferably, the preset threshold value is 0.65 mV. The higher the first theoretical voltage value is relative to the second theoretical voltage value, the higher the first theoretical voltage value is, the higher the passivation layer formed on the surfaces of the first preset number of solar cell silicon wafers through the oxidation passivation process is, the more the passivation of the surfaces of the solar cell silicon wafers is facilitated, and the larger the open-circuit voltage value of the prepared solar cell is.
And S105, when the oxidation passivation process is qualified, performing oxidation passivation treatment on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process.
In the embodiment of the present invention, the specific implementation manner of step S105 is: and when the first theoretical voltage value is greater than or equal to the second theoretical voltage value and the first theoretical voltage value is greater than the preset threshold value, performing oxidation passivation treatment on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process.
In the embodiment of the invention, when the oxidation passivation process is qualified, oxidation passivation treatment is carried out on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process. And when the oxidation passivation process is unqualified, reworking the solar cell silicon wafer for reuse.
Optionally, the method further includes: acquiring square resistors of a third preset number of solar cell silicon wafers; judging whether the square resistances of the solar cell silicon wafers of the third preset number are within a preset resistance threshold range; and when the square resistance of the third preset number of solar cell silicon wafers is within the preset resistance threshold value range, performing oxidation passivation treatment on the surfaces of the first preset number of solar cell silicon wafers through an oxidation passivation process.
In the embodiment of the present invention, before step S101, a third preset number of solar cell silicon wafers are taken from the solar cell silicon wafers, for example, 10 solar cell silicon wafers are randomly taken from 1000 solar cell silicon wafers, then the sheet resistance of the third preset number of solar cell silicon wafers is tested, when the sheet resistance of the third preset number of solar cell silicon wafers is within a preset resistance threshold value range, step S101 is executed again, and when the sheet resistance of the third preset number of solar cell silicon wafers is not within the preset resistance threshold value range, the solar cell silicon wafers are reworked and reused. The predetermined resistance threshold is 15 ohms to 25 ohms.
The embodiment of the invention carries out oxidation passivation treatment on the surfaces of a first preset number of solar cell silicon wafers through an oxidation passivation process, forms a passivation layer on the surfaces of the first preset number of solar cell silicon wafers, obtains a first theoretical voltage value of the first preset number of solar cell silicon wafers, directly obtains a second theoretical voltage value of the second preset number of solar cell silicon wafers without oxidation passivation treatment on the second preset number of solar cell silicon wafers, judges whether the oxidation passivation process is qualified according to the first theoretical voltage value and the second theoretical voltage value, carries out oxidation passivation treatment on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process when the oxidation passivation process is qualified, thereby solving the problem of low yield of the solar cells caused by the oxidation passivation process, the yield of the solar cell is improved.
It should be understood that, the sequence numbers of the steps in the foregoing embodiments do not imply an execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.
Example two
Referring to fig. 2, a second embodiment of the present invention provides an oxidation passivation apparatus for a solar cell silicon wafer, including:
the first processing module 201 is configured to perform oxidation passivation processing on the surfaces of a first preset number of solar cell silicon wafers through an oxidation passivation process;
a first obtaining module 202, configured to obtain a first theoretical voltage value of the first preset number of solar cell silicon wafers after oxidation passivation treatment;
the second obtaining module 203 is configured to obtain a second theoretical voltage value of a second preset number of solar cell silicon wafers;
a judging module 204, configured to judge whether the oxidation passivation process is qualified according to the first theoretical voltage value and the second theoretical voltage value;
and the second processing module 205 is configured to, when the oxidation passivation process is qualified, perform oxidation passivation on the surfaces of the solar cell silicon wafers except for the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process.
Optionally, the first obtaining module 202 is specifically configured to perform film coating on the surfaces of the first preset number of solar cell silicon wafers subjected to oxidation passivation treatment by using a film coating process;
sintering the solar cell silicon wafers of the first preset number after being coated with the film by a sintering process;
and acquiring a first theoretical voltage value of the sintered solar cell silicon wafers of the first preset number.
Optionally, the second obtaining module 203 is specifically configured to perform film coating on the surfaces of the second preset number of solar cell silicon wafers through a film coating process;
sintering the solar cell silicon wafers of the second preset number after being coated with the films by a sintering process;
and acquiring a second theoretical voltage value of the sintered solar cell silicon wafers of the second preset number.
Optionally, the determining module 204 is specifically configured to determine whether the first theoretical voltage value is greater than or equal to the second theoretical voltage value, and whether the first theoretical voltage value is greater than a preset threshold.
Further, the second processing module 205 is specifically configured to, when the first theoretical voltage value is greater than or equal to the second theoretical voltage value and the first theoretical voltage value is greater than the preset threshold, perform, through the oxidation passivation process, oxidation passivation on the surfaces of the solar cell silicon wafers except for the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers.
Optionally, the apparatus further comprises:
the square resistance testing module is used for obtaining the square resistances of a third preset number of solar cell silicon wafers;
and judging whether the square resistances of the solar cell silicon wafers of the third preset number are within a preset resistance threshold range.
Further, the first processing module 201 is configured to perform oxidation passivation processing on the surfaces of the first preset number of solar cell silicon wafers through an oxidation passivation process when the square resistance of the third preset number of solar cell silicon wafers is within the preset resistance threshold range.
In the embodiment of the invention, a first processing module 201 performs oxidation passivation on the surfaces of a first preset number of solar cell silicon wafers through an oxidation passivation process, a passivation layer is formed on the surfaces of the first preset number of solar cell silicon wafers, a first obtaining module 202 obtains a first theoretical voltage value of the first preset number of solar cell silicon wafers, a second obtaining module 203 obtains a second theoretical voltage value of the second preset number of solar cell silicon wafers, a judging module 204 judges whether the oxidation passivation process is qualified or not according to the first theoretical voltage value and the second theoretical voltage value, and a second processing module 205 performs oxidation passivation on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process when the oxidation passivation process is qualified, so as to solve the problem of low yield of the solar cell caused by the oxidation passivation process, the yield of the solar cell is improved.
EXAMPLE III
Fig. 3 is a schematic diagram of an oxidation passivation terminal device for a solar cell silicon wafer according to an embodiment of the present invention. As shown in fig. 3, the terminal device 3 for oxidative passivation of a solar cell silicon wafer of this embodiment includes: a processor 301, a memory 302 and a computer program 303 stored in said memory 302 and executable on said processor 301. The processor 301, when executing the computer program 303, implements the steps in the above-described embodiments of the method for oxidation passivation of a silicon wafer of a solar cell, such as the steps S101 to S105 shown in fig. 1. Alternatively, the processor 301 executes the computer program 303 to implement the functions of the modules/units in the device embodiments, such as the modules 201 to 205 shown in fig. 2.
Illustratively, the computer program 303 may be partitioned into one or more modules/units that are stored in the memory 302 and executed by the processor 301 to implement the present invention. The one or more modules/units may be a series of computer program instruction segments capable of performing specific functions, which are used to describe the execution process of the computer program 303 in the oxidation passivation terminal device 3 of the solar cell silicon wafer. For example, the computer program 303 may be divided into a first processing module, a first obtaining module, a second obtaining module, a determining module and a second processing module, and each module has the following specific functions:
the first processing module is used for carrying out oxidation passivation processing on the surfaces of a first preset number of solar cell silicon wafers through an oxidation passivation process;
the first obtaining module is used for obtaining a first theoretical voltage value of the solar cell silicon wafers of the first preset number after oxidation passivation treatment;
the second acquisition module is used for acquiring second theoretical voltage values of a second preset number of solar cell silicon wafers;
the judging module is used for judging whether the oxidation passivation process is qualified or not according to the first theoretical voltage value and the second theoretical voltage value;
and the second processing module is used for performing oxidation passivation treatment on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process when the oxidation passivation process is qualified.
Optionally, the first obtaining module is specifically configured to perform film coating on the surfaces of the first preset number of solar cell silicon wafers subjected to oxidation passivation treatment through a film coating process;
sintering the solar cell silicon wafers of the first preset number after being coated with the film by a sintering process;
and acquiring a first theoretical voltage value of the sintered solar cell silicon wafers of the first preset number.
Optionally, the second obtaining module is specifically configured to perform film coating on the surfaces of the second preset number of solar cell silicon wafers through a film coating process;
sintering the solar cell silicon wafers of the second preset number after being coated with the films by a sintering process;
and acquiring a second theoretical voltage value of the sintered solar cell silicon wafers of the second preset number.
Optionally, the determining module is specifically configured to determine whether the first theoretical voltage value is greater than or equal to the second theoretical voltage value, and whether the first theoretical voltage value is greater than a preset threshold.
Further, the second processing module is specifically configured to, when the first theoretical voltage value is greater than or equal to the second theoretical voltage value and the first theoretical voltage value is greater than the preset threshold, perform, through the oxidation passivation process, oxidation passivation on the surfaces of the solar cell silicon wafers except for the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers.
Optionally, the apparatus further comprises:
the square resistance testing module is used for obtaining the square resistances of a third preset number of solar cell silicon wafers;
and judging whether the square resistances of the solar cell silicon wafers of the third preset number are within a preset resistance threshold range.
Further, the first processing module is configured to perform oxidation passivation processing on the surfaces of the first preset number of solar cell silicon wafers through an oxidation passivation process when the square resistance of the third preset number of solar cell silicon wafers is within the preset resistance threshold range.
The oxidation passivation terminal device 3 of the solar cell silicon wafer can be a desktop computer, a notebook computer, a palm computer, a cloud server and other computing devices. The oxidation passivation terminal equipment of the solar cell silicon wafer can comprise, but is not limited to, a processor 301 and a memory 302. It will be understood by those skilled in the art that fig. 3 is merely an example of the oxidation passivation terminal device 3 of the solar cell silicon wafer, and does not constitute a limitation of the oxidation passivation terminal device 3 of the solar cell silicon wafer, and may include more or less components than those shown, or combine some components, or different components, for example, the oxidation passivation terminal device of the solar cell silicon wafer may further include input and output devices, network access devices, buses, and the like.
The Processor 301 may be a Central Processing Unit (CPU), other general purpose Processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf Programmable Gate Array (FPGA) or other Programmable logic device, discrete Gate or transistor logic, discrete hardware components, etc. A general purpose processor may be a microprocessor or the processor may be any conventional processor or the like.
The memory 302 may be an internal storage unit of the oxidation passivation terminal device 3 of the solar cell silicon wafer, for example, a hard disk or a memory of the oxidation passivation terminal device 3 of the solar cell silicon wafer. The memory 302 may also be an external storage device of the oxidation passivation terminal device 3 of the solar cell silicon wafer, for example, a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card), or the like, which is equipped on the oxidation passivation terminal device 3 of the solar cell silicon wafer. Further, the memory 302 may also include both an internal storage unit and an external storage device of the oxidation passivation terminal device 3 of the solar cell silicon wafer. The memory 302 is used to store the computer program and other programs and data required for the oxidative passivation of the terminal devices of the solar cell silicon wafer. The memory 302 may also be used to temporarily store data that has been output or is to be output.
It will be apparent to those skilled in the art that, for convenience and brevity of description, only the above-mentioned division of the functional units and modules is illustrated, and in practical applications, the above-mentioned function distribution may be performed by different functional units and modules according to needs, that is, the internal structure of the apparatus is divided into different functional units or modules to perform all or part of the above-mentioned functions. Each functional unit and module in the embodiments may be integrated in one processing unit, or each unit may exist alone physically, or two or more units are integrated in one unit, and the integrated unit may be implemented in a form of hardware, or in a form of software functional unit. In addition, specific names of the functional units and modules are only for convenience of distinguishing from each other, and are not used for limiting the protection scope of the present application. The specific working processes of the units and modules in the system may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the implementation. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present invention.
In the embodiments provided in the present invention, it should be understood that the disclosed apparatus/terminal device and method may be implemented in other ways. For example, the above-described embodiments of the apparatus/terminal device are merely illustrative, and for example, the division of the modules or units is only one logical division, and there may be other divisions when actually implemented, for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or units, and may be in an electrical, mechanical or other form.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In addition, functional units in the embodiments of the present invention may be integrated into one processing unit, or each unit may exist alone physically, or two or more units are integrated into one unit. The integrated unit can be realized in a form of hardware, and can also be realized in a form of a software functional unit.
The integrated modules/units, if implemented in the form of software functional units and sold or used as separate products, may be stored in a computer readable storage medium. Based on such understanding, all or part of the flow of the method according to the embodiments of the present invention may also be implemented by a computer program, which may be stored in a computer-readable storage medium, and when the computer program is executed by a processor, the steps of the method embodiments may be implemented. Wherein the computer program comprises computer program code, which may be in the form of source code, object code, an executable file or some intermediate form, etc. The computer-readable medium may include: any entity or device capable of carrying the computer program code, recording medium, usb disk, removable hard disk, magnetic disk, optical disk, computer Memory, Read-Only Memory (ROM), Random Access Memory (RAM), electrical carrier wave signals, telecommunications signals, software distribution medium, and the like. It should be noted that the computer readable medium may contain content that is subject to appropriate increase or decrease as required by legislation and patent practice in jurisdictions, for example, in some jurisdictions, computer readable media does not include electrical carrier signals and telecommunications signals as is required by legislation and patent practice.
Example four
The fourth embodiment of the invention provides a preparation method of a solar cell, which comprises the oxidation passivation method of the solar cell silicon wafer according to the first embodiment of the invention, and has the beneficial effects of the first embodiment of the invention.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (8)
1. An oxidation passivation method for a solar cell silicon wafer is characterized by comprising the following steps:
carrying out oxidation passivation treatment on the surfaces of the first preset number of solar cell silicon wafers through an oxidation passivation process;
acquiring a first theoretical voltage value of the first preset number of solar cell silicon wafers after oxidation passivation treatment;
acquiring a second theoretical voltage value of a second preset number of solar cell silicon wafers;
judging whether the oxidation passivation process is qualified or not according to the first theoretical voltage value and the second theoretical voltage value;
when the oxidation passivation process is qualified, performing oxidation passivation treatment on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process;
the oxidation passivation process forms passivation layers on the upper surface and the lower surface of a first preset number of solar cell silicon wafers, wherein the passivation layers are silicon oxide layers;
the obtaining of the first theoretical voltage value of the first preset number of solar cell silicon wafers after the oxidation passivation treatment comprises:
coating the surfaces of the first preset number of solar cell silicon wafers subjected to oxidation passivation treatment by a coating process;
sintering the solar cell silicon wafers of the first preset number after being coated with the film by a sintering process;
acquiring a first theoretical voltage value of the sintered solar cell silicon wafers of the first preset number;
the acquiring of the second theoretical voltage value of the second preset number of solar cell silicon wafers comprises:
coating the surfaces of the second preset number of solar cell silicon wafers by a coating process;
sintering the solar cell silicon wafers of the second preset number after being coated with the films by a sintering process;
and acquiring a second theoretical voltage value of the sintered solar cell silicon wafers of the second preset number.
2. The method for oxidation passivation of a solar cell silicon wafer according to claim 1, wherein the step of judging whether the oxidation passivation process is qualified or not according to the first theoretical voltage value and the second theoretical voltage value comprises the following steps:
judging whether the first theoretical voltage value is greater than or equal to the second theoretical voltage value and whether the first theoretical voltage value is greater than a preset threshold value;
when the oxidation passivation process is qualified, performing oxidation passivation treatment on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process, wherein the oxidation passivation process comprises the following steps:
and when the first theoretical voltage value is greater than or equal to the second theoretical voltage value and the first theoretical voltage value is greater than the preset threshold value, performing oxidation passivation treatment on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process.
3. The method for oxidative passivation of a solar cell silicon wafer according to claim 1, further comprising:
acquiring square resistors of a third preset number of solar cell silicon wafers;
judging whether the square resistances of the solar cell silicon wafers of the third preset number are within a preset resistance threshold range;
and when the square resistance of the third preset number of solar cell silicon wafers is within the preset resistance threshold value range, performing oxidation passivation treatment on the surfaces of the first preset number of solar cell silicon wafers through an oxidation passivation process.
4. The method for oxidative passivation of solar cell silicon wafers as claimed in claim 1, wherein the oxidative passivation process is a wet oxygen oxidation process or a dry oxygen oxidation process.
5. An oxidation passivation device for a solar cell silicon wafer is characterized by comprising:
the first processing module is used for carrying out oxidation passivation processing on the surfaces of a first preset number of solar cell silicon wafers through an oxidation passivation process;
the first obtaining module is used for obtaining a first theoretical voltage value of the solar cell silicon wafers of the first preset number after oxidation passivation treatment;
the second acquisition module is used for acquiring second theoretical voltage values of a second preset number of solar cell silicon wafers;
the judging module is used for judging whether the oxidation passivation process is qualified or not according to the first theoretical voltage value and the second theoretical voltage value;
the second processing module is used for performing oxidation passivation treatment on the surfaces of the solar cell silicon wafers except the first preset number of solar cell silicon wafers and the second preset number of solar cell silicon wafers through the oxidation passivation process when the oxidation passivation process is qualified;
the oxidation passivation process forms passivation layers on the upper surface and the lower surface of a first preset number of solar cell silicon wafers, wherein the passivation layers are silicon oxide layers;
the obtaining of the first theoretical voltage value of the first preset number of solar cell silicon wafers after the oxidation passivation treatment comprises:
coating the surfaces of the first preset number of solar cell silicon wafers subjected to oxidation passivation treatment by a coating process;
sintering the solar cell silicon wafers of the first preset number after being coated with the film by a sintering process;
acquiring a first theoretical voltage value of the sintered solar cell silicon wafers of the first preset number;
the acquiring of the second theoretical voltage value of the second preset number of solar cell silicon wafers comprises:
coating the surfaces of the second preset number of solar cell silicon wafers by a coating process;
sintering the solar cell silicon wafers of the second preset number after being coated with the films by a sintering process;
and acquiring a second theoretical voltage value of the sintered solar cell silicon wafers of the second preset number.
6. Terminal equipment for the oxidative passivation of solar cell silicon wafers, comprising a memory, a processor and a computer program stored in the memory and executable on the processor, characterized in that the processor implements the steps of the method according to any one of claims 1 to 4 when executing the computer program.
7. A computer-readable storage medium, in which a computer program is stored which, when being executed by a processor, carries out the steps of the method according to any one of claims 1 to 4.
8. A method for preparing a solar cell, comprising the method for the oxidative passivation of a solar cell silicon wafer according to any one of claims 1 to 4.
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