CN103403520B - Tem样品制备 - Google Patents

Tem样品制备 Download PDF

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Publication number
CN103403520B
CN103403520B CN201280006697.2A CN201280006697A CN103403520B CN 103403520 B CN103403520 B CN 103403520B CN 201280006697 A CN201280006697 A CN 201280006697A CN 103403520 B CN103403520 B CN 103403520B
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CN
China
Prior art keywords
sample
ion beam
milling
bottom side
substrate
Prior art date
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Active
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CN201280006697.2A
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English (en)
Chinese (zh)
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CN103403520A (zh
Inventor
J.布莱克伍德
M.布雷
C.塞诺维奇
C.巴格
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FEI Co
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FEI Co
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Publication date
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Publication of CN103403520A publication Critical patent/CN103403520A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/261—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • G01N2001/2873—Cutting or cleaving
    • G01N2001/2886—Laser cutting, e.g. tissue catapult
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Sampling And Sample Adjustment (AREA)
CN201280006697.2A 2011-01-28 2012-01-28 Tem样品制备 Active CN103403520B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161437474P 2011-01-28 2011-01-28
US61/437474 2011-01-28
PCT/US2012/023053 WO2012103534A1 (en) 2011-01-28 2012-01-28 Tem sample preparation

Publications (2)

Publication Number Publication Date
CN103403520A CN103403520A (zh) 2013-11-20
CN103403520B true CN103403520B (zh) 2015-12-23

Family

ID=46581203

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201280006697.2A Active CN103403520B (zh) 2011-01-28 2012-01-28 Tem样品制备

Country Status (5)

Country Link
US (3) US8859998B2 (cg-RX-API-DMAC7.html)
EP (1) EP2668488B1 (cg-RX-API-DMAC7.html)
JP (1) JP5973466B2 (cg-RX-API-DMAC7.html)
CN (1) CN103403520B (cg-RX-API-DMAC7.html)
WO (1) WO2012103534A1 (cg-RX-API-DMAC7.html)

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CN103698170B (zh) * 2012-09-27 2016-09-28 中芯国际集成电路制造(上海)有限公司 Tem样品的制备方法
TWI612551B (zh) 2012-10-05 2018-01-21 Fei公司 在帶電粒子束樣品的製備減少屏幕效應之方法及系統
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JP6199978B2 (ja) 2012-10-05 2017-09-20 エフ・イ−・アイ・カンパニー 高アスペクト比構造体の分析
CN103822806B (zh) * 2012-11-16 2016-06-29 中芯国际集成电路制造(上海)有限公司 Tem样品的制备方法
US10325754B2 (en) 2013-01-11 2019-06-18 Fei Company Ion implantation to alter etch rate
US8729469B1 (en) * 2013-03-15 2014-05-20 Fei Company Multiple sample attachment to nano manipulator for high throughput sample preparation
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JP6453580B2 (ja) * 2013-08-14 2019-01-16 エフ・イ−・アイ・カンパニー 試料調製中におけるｔｅｍ試料からのプローブの分離
US20150137003A1 (en) * 2013-11-21 2015-05-21 United Microelectronics Corp. Specimen preparation method
CN103760177B (zh) * 2014-01-03 2016-05-25 武汉新芯集成电路制造有限公司 一种基于三维tem样品进行缺陷分析的方法
EP2916342A1 (en) 2014-03-05 2015-09-09 Fei Company Fabrication of a lamella for correlative atomic-resolution tomographic analyses
US9281163B2 (en) 2014-04-14 2016-03-08 Fei Company High capacity TEM grid
WO2016067039A1 (en) * 2014-10-29 2016-05-06 Omniprobe, Inc Rapid tem sample preparation method with backside fib milling
US9576772B1 (en) * 2015-08-31 2017-02-21 Fei Company CAD-assisted TEM prep recipe creation
US9978586B2 (en) * 2015-11-06 2018-05-22 Fei Company Method of material deposition
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US10410829B1 (en) * 2018-03-30 2019-09-10 Micron Technology, Inc. Methods for acquiring planar view stem images of device structures
US10401265B1 (en) 2018-03-30 2019-09-03 Micron Technology, Inc. Methods for acquiring planar view stem images of device structures
CN108663387B (zh) * 2018-05-16 2021-11-09 国家纳米科学中心 一种湿法刻蚀制备纳米颗粒tem样品的方法
CN110567994B (zh) * 2019-10-12 2022-03-04 上海华力微电子有限公司 一种提取用于透射电子显微镜的待测样品的方法
CN111238894B (zh) * 2020-02-03 2023-02-28 天津理工大学 一种原位电学tem样品的制备方法
TWI734372B (zh) * 2020-02-07 2021-07-21 台灣積體電路製造股份有限公司 顯微試片製備方法、裝置及記錄媒體
US11069509B1 (en) * 2020-03-16 2021-07-20 Fei Company Method and system for backside planar view lamella preparation
CN114252309A (zh) * 2020-09-24 2022-03-29 中国科学院微电子研究所 透射电镜样品的制备方法及装置
CN116930232A (zh) * 2022-03-31 2023-10-24 Fei 公司 用于分析三维特征部的方法及系统
CN116242863B (zh) * 2023-02-14 2024-07-12 苏州创镕新材料科技有限公司 一种电解双喷透射样品的制备方法
CN116337577A (zh) * 2023-04-28 2023-06-27 南京泛铨电子科技有限公司 一种适用于芯片堆栈封装局部减薄基板厚度的试片制备方法

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JP2007248082A (ja) * 2006-03-14 2007-09-27 Hitachi High-Technologies Corp 荷電粒子線装置に用いられる標準試料，荷電粒子線装置、及び荷電粒子線装置に用いられる標準試料の製造方法
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Also Published As

Publication number Publication date
CN103403520A (zh) 2013-11-20
US20150053548A1 (en) 2015-02-26
WO2012103534A1 (en) 2012-08-02
EP2668488A4 (en) 2015-03-04
EP2668488B1 (en) 2016-09-21
US8859998B2 (en) 2014-10-14
JP2014505255A (ja) 2014-02-27
EP2668488A1 (en) 2013-12-04
US9378925B2 (en) 2016-06-28
JP5973466B2 (ja) 2016-08-23
US9177760B2 (en) 2015-11-03
US20140217283A1 (en) 2014-08-07
US20160020069A1 (en) 2016-01-21

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