CN103400920A - Light emitting device, light emitting device manufacturing method, light emitting package, and lighting system - Google Patents

Light emitting device, light emitting device manufacturing method, light emitting package, and lighting system Download PDF

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Publication number
CN103400920A
CN103400920A CN2013102765268A CN201310276526A CN103400920A CN 103400920 A CN103400920 A CN 103400920A CN 2013102765268 A CN2013102765268 A CN 2013102765268A CN 201310276526 A CN201310276526 A CN 201310276526A CN 103400920 A CN103400920 A CN 103400920A
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layer
electrode
luminescent device
outer electrode
ray structure
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CN2013102765268A
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CN103400920B (en
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丁焕熙
李尚烈
宋俊午
崔光基
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Suzhou Lekin Semiconductor Co Ltd
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LG Innotek Co Ltd
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Priority claimed from KR20090121739A external-priority patent/KR100986353B1/en
Priority claimed from KR1020090121740A external-priority patent/KR100986374B1/en
Priority claimed from KR1020100010048A external-priority patent/KR100999701B1/en
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103400920A publication Critical patent/CN103400920A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

A light emitting device according to an embodiment includes: a conductive support substrate; a luminous structural layer on the conductive support substrate and is provided with an inclined side surface, a protection layer disposed at a periphery portion of the conductive support substrate and partly disposed between the conductive support substrate and the luminous structural layer; and electrodes at least partially overlapping the protection layer on the conductive support substrate. The electrodes comprise an external electrode, an internal electrode disposed in the external electrode and connected with a first part and a second part of the external electrode, and a pad unit connected with the external electrode. The electrodes at least partially overlap the inclined side surface of the luminous structural layer and the protection layer.

Description

Luminescent device, manufacturing method of lighting device, light emitting device package and illuminator
The application be submitted on December 9th, 2010, the dividing an application of the Chinese patent application 201010591857.7 of " luminescent device, manufacturing method of lighting device, light emitting device package and illuminator " by name.
Technical field
Embodiment relates to luminescent device, manufacturing method of lighting device, light emitting device package and illuminator.
Background technology
Light-emitting diode (LED) be a kind of by electric energy conversion, be the semiconductor device of light.With the light source such as fluorescent lamp and incandescent lamp of correlation technique, compare, the advantage of light-emitting diode is low power consumption, semi-permanent life-span, high response speed, safety and eco-friendly feature.
Carried out much research and utilized light-emitting diode to substitute the light source of correlation technique, light-emitting diode is used as the light source of the inside and outside various lamps that use of building, liquid crystal display, electronic notice board, street lamp etc. more and more.
Summary of the invention
Embodiment provides luminescent device, manufacturing method of lighting device, light emitting device package and the illuminator with new construction.
Embodiment provides luminescent device, manufacturing method of lighting device, light emitting device package and the illuminator of the operating voltage with reduction.
Embodiment provides luminescent device, manufacturing method of lighting device, light emitting device package and the illuminator of the luminous efficiency with improvement.
According to the luminescent device of an embodiment, comprise: conductive support substrate; Knitting layer on conductive support substrate; Reflector on knitting layer; Ohmic contact layer on reflector; Current barrier layer on ohmic contact layer; The protective layer of the periphery office on knitting layer; Ray structure layer on current barrier layer, ohmic contact layer and protective layer; With the electrode on the ray structure layer; described electrode and current barrier layer and protective layer are overlapping at least partly, wherein said protective layer by conductance lower than material, the electrical insulating material of reflector or ohmic contact layer or make with the material of ray structure layer Schottky contacts.
According to the luminescent device of another embodiment, comprise: conductive support substrate; Ray structure layer on conductive support substrate; The peripheral part place and the part that are arranged on conductive support substrate are arranged on the conductive protecting layer between conductive support substrate and ray structure layer; Be arranged on the ray structure layer and with conductive protecting layer overlapping electrode at least partly, wherein the ray structure layer has the side of inclination, and the side of described inclination and conductive protecting layer overlapping.
According to the luminescent device of another embodiment, comprise: conductive support substrate; Ray structure layer on conductive support substrate; The peripheral part place and the part that are arranged on conductive support substrate are arranged on the protective layer between conductive support substrate and ray structure layer; With on the ray structure layer with the overlapping electrode of protective layer part, wherein said electrode comprises external electrode, it is inner and by the interior electrode of the First of external electrode and second connection and the single pad unit that is connected with external electrode to be arranged on external electrode.
The accompanying drawing explanation
Fig. 1 is the view of explanation according to the luminescent device of the first embodiment;
The view of the method for luminescent device is according to embodiments of the present invention manufactured for explanation in Fig. 2～10;
Figure 11 is the view of explanation according to the luminescent device of the second embodiment;
Figure 12 is the view of explanation according to the luminescent device of the 3rd embodiment;
Figure 13 is the view of the plane-shaped electrode in the luminescent device that is presented at according to an embodiment of the invention;
Figure 14 is the view of another example of the plane-shaped electrode in the luminescent device that is presented at according to an embodiment of the invention;
Figure 15 is the view of another example of the plane-shaped electrode in the luminescent device that is presented at according to an embodiment of the invention;
Figure 16 is the view of another example of the plane-shaped electrode in the luminescent device that is presented at according to an embodiment of the invention;
Figure 17 is the view of another example of the plane-shaped electrode in the luminescent device that is presented at according to an embodiment of the invention;
Figure 18 is the view that shows the electrode of a contrast embodiment according to the present invention;
Figure 19 is the view that shows electrode illustrated in fig. 15;
Figure 20 is that the luminescent device that comprises the electrode of embodiment shown in Figure 13 is schemed with comprising the optical output ratio that contrasts the luminescent device of embodiment electrode shown in Figure 18;
Figure 21 is the cross-sectional view that comprises the light emitting device package of luminescent device according to an embodiment of the invention;
Figure 22 for explanation comprise according to an embodiment of the invention luminescent device or the view of the back light unit of light emitting device package;
Figure 23 for explanation comprise according to an embodiment of the invention luminescent device or the view of the lighting unit of light emitting device package.
Embodiment
It is to be understood that in the description of embodiment of the present invention, when key element for example layer (film), zone, pattern or structure be called another substrate, layer (film), zone or pattern " on " or during D score, its can " directly " other key element " on " or D score, or can " indirectly " other key element " on " or D score (middle other key element that exists).Can with reference to accompanying drawing limit each layer " on " or D score.
With clear, in the accompanying drawings, the thickness of each layer or size can be amplified, omit or schematically show for convenience.In addition, the size of each member perfect representation actual size not.
Below with reference to accompanying drawing, luminescent device, manufacturing method of lighting device, light emitting device package and illuminator are according to embodiments of the present invention described.
Fig. 1 is the view of explanation according to the luminescent device of the first embodiment;
With reference to figure 1, according to the luminescent device 100 of first embodiment of the invention, comprise: conductive support substrate 175, the knitting layer 170 on conductive support substrate 175, on the 160,Zai reflector, reflector 160 on knitting layer 170 ohmic contact layer 150, at the protective layer 140 of the periphery office on knitting layer 170, ray structure layer 135 and the electrode on ray structure layer 135 115 of generation light on ohmic contact layer 150 and protective layer 140.
Conductive support substrate 175 supports ray structure layer 135 and together with electrode 115, ray structure layer 135 is powered.
For example, conductive support substrate 175 can comprise Cu, Au, Ni, Mo, Cu-W and carrier wafer (for example Si, Ge, GaAs, ZnO, SiC, GaN, Ga 2O 3) in one of at least.
On conductive support substrate 175, can form knitting layer 170.
Knitting layer 170 in reflector 160 and protective layer 140 times form.Knitting layer 170 contacts with reflector 160, ohmic contact layer 150 and protective layer 140, makes reflector 160, ohmic contact layer 150 and protective layer 140 engage with conductive support substrate 175.
Form knitting layer 170 with conductive support substrate 175, to engage.
Therefore, when plating or depositing electrically conductive support substrates 175, not to form knitting layer 170, knitting layer 170 optionally forms like this.
Knitting layer 170 comprises barrier metal or jointing metal, for example can comprise in Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag and Ta one of at least.
On knitting layer 170, can form reflector 160.Light extraction efficiency can be reflected to improve by self-illuminating structure layer 135 incident light in future in reflector 160.
Reflector 160 can be for example by comprising that the metal or alloy one of at least in Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf makes.In addition, reflector 160 can use metal or alloy and printing opacity electric conducting material for example IZO, IZTO, IAZO, IGZO, IGTO, AZO and ATO form multilayer, cremasteric reflex layer 160 to be to improve luminous efficiency, reflector 160 nonessential formation.
On reflector 160, can form ohmic contact layer 150.Ohmic contact layer 150 and second the conduction semiconductor layer 130 ohmic contact, make ray structure layer 135 steady electricity supply, and can comprise in ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO and ATO at least any one.
Namely, ohmic contact layer 150 can by photic zone and metal selective make, and can be by ITO (tin indium oxide), IZO (indium zinc oxide), IZTO (indium oxide zinc-tin), IAZO (indium oxide aluminium zinc), IGZO (indium oxide gallium zinc), IGTO (indium oxide gallium tin), AZO (aluminum zinc oxide), ATO (antimony tin), GZO (gallium oxide zinc), IrOx, RuO x, RuO x/ ITO, Ni, Ag, Ni/IrO x/ Au and Ni/IrO xOne or more of in/Au/ITO are embodied as one or more layers.
Provide ohmic contact layer 150 charge carrier is injected reposefully to the semiconductor layer 130 of the second conduction, ohmic contact layer 150 nonessential formation.
For example, for reflector 160 materials, can be the material of semiconductor layer 130 ohmic contact with the second conduction, wherein inject the second conduction semiconductor layer 130 charge carrier can from when forming ohmic contact layer 150 significantly different.
Between the semiconductor layer 130 of ohmic contact layer 150 and the second conduction, can form current barrier layer (CBL) 145.The top of current barrier layer 145 contacts with the semiconductor layer 130 of the second conduction, and the bottom of current barrier layer 145 contacts with ohmic contact layer 150 with side.
Current barrier layer 145 can be overlapping at least partly with electrode 115, therefore, improves the electric current that produces due to the beeline between electrode 115 and conductive support substrate 175 and concentrate, and improves thus the luminous efficiency of luminescent device 100.
The width of current barrier layer 145 is 0.9～1.3 times of width of electrode 115.For example, the width of current barrier layer 145 can be 1.1～1.3 times of width of electrode 115.
Current barrier layer 145 can be by conductance less than the material of reflector 160 or ohmic contact layer 150, with material or the electrical insulating material of semiconductor layer 130 Schottky contacts of the second conduction, make.
For example, current barrier layer 145 can comprise ZnO, SiO 2, SiON, Si 3N 4, Al 2O 3, TiO 2, in Ti, Al and Cr one of at least.
Simultaneously, current barrier layer 145 can form between the semiconductor layer 130 of ohmic contact layer 150 and the second conduction or between reflector 160 and ohmic contact layer 150, but is not limited to this.In addition, can apply by the semiconductor layer 130 to the second conduction plasma treatment and form the zone that electric current wherein is difficult to flow and do not form current barrier layer 145, described zone can be used as current barrier region, as current barrier layer 145.
In addition, provide current barrier layer 145 to allow electric current broadly to flow into ray structure layer 135, but current barrier layer 145 is not essential formation.
Periphery office on knitting layer 170 can form protective layer 140.When not forming knitting layer 170, can form protective layer 140 in the periphery office on conductive support substrate.
Protective layer 140 can reduce the deteriorated of luminescent device 100 reliabilities that the separation due to interface between ray structure layer 145 and knitting layer 170 causes.
Protective layer 140 can be the conductive protecting layer of being made by electric conducting material or the non-conductive protective layer of being made by non-conducting material.
Conductive protecting layer can by the transparent conductive oxide film make maybe can comprise in Ti, Ni, Pt, Pd, Rh, Ir and W one of at least.
For example, the transparent conductive oxide film can be any in ITO (tin indium oxide), IZO (indium zinc oxide), IZTO (indium oxide zinc-tin), IAZO (indium oxide aluminium zinc), IGZO (indium oxide gallium zinc), IGTO (indium oxide gallium tin), AZO (aluminum zinc oxide), ATO (antimony tin), GZO (gallium oxide zinc).
In addition; when in the chip separation process, applying isolation, be etched with when ray structure layer 145 is divided into to the unit chip, conductive protecting layer prevents from being produced fragments and being prevented bonding between the second conductive semiconductor layer 130 and active layer 120 or between active layer 120 and the first conductive semiconductor layer 110 and cause electrical short by knitting layer 170.
Therefore, conductive protecting layer is made by the material that can not break or produce fragment.
Because conductive protecting layer has conductivity, so electric current can inject ray structure layer 135 by conductive protecting layer.
Therefore, on the conductive protecting layer around ray structure layer 135, can effectively produce light by active layer 120.
In addition, conductive protecting layer can make the operating voltage of luminescent device reduce by reducing the operating voltage increase that causes due to current barrier layer 145.
Conductive protecting layer can be made by the material identical with ohmic contact layer 150.
The conductivity of non-conductive layer is very low, and it can be made by non-conducting material basically.Non-conductive protective layer 145 can be by the material conductance significantly less than the material of reflector 160 or ohmic contact layer 150, with material or the electrical insulating material of semiconductor layer 130 Schottky contacts of the second conduction, make.
For example, non-conductive protective layer can be by ZnO or SiO 2Make.
Non-conductive protective layer increases the distance between knitting layer 170 and active layer 120.Therefore, can reduce the possibility of electrical short between knitting layer 170 and active layer 120.
In addition; when in the chip separation process, applying isolation, be etched with when ray structure layer 145 is divided into to the unit chip, non-conductive protective layer prevents from being produced fragments and being prevented bonding between the second conductive semiconductor layer 130 and active layer 120 or between active layer 120 and the first conductive semiconductor layer 110 and cause electrical short by knitting layer 170.
Non-conductive protective layer is made by the material that can not break broadwise into pieces material or have the conductivity that can not cause electrical short (even it breaks for a small amount of fragment in etching a little in isolation).
On ohmic contact layer 150 and protective layer 140, can form ray structure layer 135.
In isolating and being etched with and being separated into the unit chip, the side tiltable of ray structure layer 135, and surface and the protective layer 140 that should tilt are overlapping at least partly.
The part at protective layer 140 tops can go out by the isolation etch exposed.
Therefore, protective layer 140 can form at presumptive area place and ray structure layer 135 overlapping and not overlapping with ray structure layer 135 in other location.
The first conductive semiconductor layer 110 can comprise for example n type semiconductor layer.It is In that the first conductive semiconductor layer 110 can be selected from composition formula xAl yGa 1-x-yThe semi-conducting material of N (0≤x≤1,0≤y≤1,0≤x+y≤1), for example InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN and InN.
Active layer 120 is for utilizing the luminous layer of band gap difference that can be with according to active layer 120 materials, when luminous with semiconductor layer 130 injected holes (or electronics) compound tense by the second conduction by the first conductive semiconductor layer 110 injected electrons (or hole).
Active layer 120 can form any one in single quantum well, Multiple Quantum Well (MQW), quantum dot and quantum wire, but is not limited to this.
Active layer can be In by composition formula xAl yGa 1-x-yThe semi-conducting material of N (0≤x≤1,0≤y≤1,0≤x+y≤1) is made.When active layer 120 formed Multiple Quantum Well, active layer 120 can for example form with the order of InGaN trap layer/GaN barrier layer by stacking a plurality of trap layers and a plurality of barrier layer.
Coating (not shown) doped with N-shaped or p-type dopant can form above and/or under active layer 120, and can realize by AlGaN layer or InAlGaN layer.
The semiconductor layer 130 of the second conduction can be realized by for example p-type semiconductor layer.It is In that the second conductive semiconductor layer 130 can be selected from composition formula xAl yGa 1-x-yThe semi-conducting material of N (0≤x≤1,0≤y≤1,0≤x+y≤1), for example InAlGaN, GaN, AlGaN, InGaN, AlInN, AlN and InN, and can be doped with p-type dopant for example Mg, Zn, Ca, Sr and Ba.
Simultaneously, the first conductive semiconductor layer 110 can comprise the p-type semiconductor layer, and the second conductive semiconductor layer 130 can comprise the N-shaped semiconductor layer.In addition, comprise that the 3rd conductive semiconductor layer (not shown) of N-shaped or p-type semiconductor layer can form on the second conductive semiconductor layer 130, thus ray structure layer 135 can comprise in np knot, pn knot, npn knot and pnp junction structure one of at least.In addition, the doping content in the first conductive semiconductor layer 110 and the second conductive semiconductor layer 130 can be even or inhomogeneous.That is, the structure of ray structure layer 130 can be carried out the change of variety of way and is not limited to described herein.
The ray structure layer 135 that comprises the first conductive semiconductor layer 110, active layer 120 and the second conductive semiconductor layer 130 can form the structure of various changes, and is not limited in embodiments the structure of exemplary ray structure layer 135.
On the top of ray structure layer 135, form electrode 115.Electrode 115 can be divided into predetermined pattern, but is not limited to this.
On the top of the first conductive semiconductor layer 100, can form coarse patterns 112 to improve light extraction efficiency.Therefore, on the top of electrode 115, can form coarse patterns, but be not limited to this.
Electrode 115 can contact with the top of the first conductive semiconductor layer 110.In addition, electrode 115 can form identical or different structure by stacking at least one single pad unit and at least one branch shape electrode unit, but is not limited to this.
Electrode 115 can comprise: outer electrode 115a, internal electrode 115b and single pad unit (115c in Figure 13).That is, electrode unit can consist of outer electrode 115a and internal electrode 115b.
Electrode 115 can be overlapping in the reservations office at least with protective layer 140 and current barrier layer 145.
For example, outer electrode 115a can be vertical overlapping with protective layer 140, and internal electrode 115b can be vertical overlapping with current barrier layer 145.Obviously, when not forming current barrier layer 145, outer electrode 115a can be vertical overlapping with protective layer 140.
Because conductive protecting layer and electrode 115 are overlapping, when protective layer is conductive protecting layer, can make a large amount of electric currents flow in the active layer 120 on conductive protecting layer.Therefore, by active layer 120, by larger regional utilizing emitted light, make the luminous efficiency of luminescent device to improve.In addition, the operating voltage of luminescent device 100 can reduce.
When protective layer 140 was non-conductive protective layer, a small amount of electric current that flows in the active layer 120 on non-conductive protective layer, can not produce light like this, so the luminous efficiency of luminescent device 100 can reduce.Yet, because electrode 115 is positioned at the position overlapping with non-conductive protective layer, so can make more multiple current flow in the active layer 120 on non-conductive protective layer.Therefore, by active layer 120, by larger regional utilizing emitted light, make the luminous efficiency of luminescent device to improve.
On the side at least of ray structure layer 135, can form passivation layer 180.In addition, passivation layer 180 can form on the first conductive semiconductor layer 110 tops and on the top of protective layer 140, but is not limited to this.
Passivation layer 180 can be by for example SiO 2, SiO x, SiO xN y, Si 3N 4, Al 2O 3Make that ray structure layer 135 is carried out to electric protection, but be not limited to this.
Figure 13 is the view of the plane-shaped electrode in the luminescent device that is presented at according to an embodiment of the invention.In Fig. 1, illustrated along the shape of cross section of line I-I ' intercepting.
With reference to figure 1 and 13, electrode 115 forms and can comprise on the first conductive semiconductor layer 110: the outer electrode 115a that extends along the Shang De edge, top of the first conductive semiconductor layer 110 and by second the internal electrode 115b that be connected of the First of outer electrode 115a with outer electrode 115a.Internal electrode 115b can be arranged on the intra-zone that is surrounded by outer electrode 115a.
Outer electrode 115a comprises: the first outer electrode 115a1, the second outer electrode 115a2, the 3rd outer electrode 115a3 and be section's electrode 115a4 all round.In addition, internal electrode 115b can comprise: the first internal electrode 115b1, the second internal electrode 115b2, the 3rd internal electrode 115b3 and the 4th internal electrode 115b4.
Outer electrode 115a can be formed at least in part in outermost 50 microns of the first conductive semiconductor layer 110 tops, and can contact with passivation layer 180.For example, the first outer electrode 115a1, the second outer electrode 115a2, the 3rd outer electrode 115a3 and all round section's electrode 115a4 can be at least partially disposed on separately in outermost 50 microns from the first conductive semiconductor layer 110 tops.
Outer electrode 115a can be set to have the rectangle at four He Si angles, limit, and comprises: the first outer electrode 115a1 that extends along first direction and the second outer electrode 115a2 and the 3rd outer electrode 115a3 that extends along the second direction perpendicular to first direction and the be section's electrode 115a4 all round.
The 115c of single pad unit can comprise: the first single pad 115c1 of unit and the 115c2 of the second single pad unit, wherein the first 115c1 of single pad unit can be positioned at the junction of the first outer electrode 115a1 and the 3rd outer electrode 115a3, and the second 115c2 of single pad unit can be positioned at the first outer electrode 115a1 and the junction of section's electrode 115a4 all round.
Internal electrode 115b comprises: the first internal electrode 115b1, the second internal electrode 115b2, the 3rd internal electrode 115b3 that along second direction, extend and the first outer electrode 115a1 is connected with the second outer electrode 115a2, and the 3rd outer electrode 115a3 that also will extend along second direction that extends along first direction and the the 4th internal electrode 115b4 of being connected of section's electrode 115a4 all round.
Distance A between the first outer electrode 115a1 and the 4th internal electrode 115b4 can greater than between the second outer electrode 115a2 and the 4th internal electrode 115b4 apart from B.
In addition, between the distance B between the distance C between the 3rd outer electrode 115a3 and the first internal electrode 115b1, the first internal electrode 115b1 and the second internal electrode 115b2, the second internal electrode 115b2 and the 3rd internal electrode 115b3 apart from E and the 3rd internal electrode 115b3 and all round between section's electrode 115a4 can be basic identical apart from F.
In addition, the width of at least a portion of outer electrode 115a can be greater than the width of internal electrode 115b.In addition, the width of at least a portion of outer electrode 115a can be greater than the width of the other parts of outer electrode 115a.
For example, the first outer electrode 115a1 can form on width greater than internal electrode 115b, and the first outer electrode 115a1 can form on width greater than the second outer electrode 115a2.
In addition, the width near the first outer electrode 115a1 in the width of section's electrode 115a4 can be greater than the width near the second outer electrode 115a2 all round for the 3rd outer electrode 115a3 and the.For example, outer electrode 115a and internal electrode 115b limit window, and the width of outer electrode 115a that wherein is positioned at the wide section of described opening can be greater than the width of the outer electrode of the narrow section that is positioned at described opening.
Internal electrode 115b will be divided into a plurality of zones by the interior zone that outer electrode 115a surrounds.Near the zone of the first outer electrode 115a1 with Breadth Maximum in described zone on area greater than the zone near having the second outer electrode 115a2 of less width.
In addition, internal electrode 115b can form on width less than outer electrode 115a.
For example, the first outer electrode 115a1 and the 3rd outer electrode 115ta3 and the part near the first outer electrode 115a1 of section's electrode 115a4 all round can form the width with 25～35 microns, the second outer electrode 115a2 and the 3rd outer electrode 115a3 and the part near the second outer electrode 115a2 of section's electrode 115a4 all round can form the width with 15～25 microns, and internal electrode 115b can form the width with 5～15 microns.
According to the electrode 115 of the luminescent device of embodiment shown in Figure 13, can be applicable to a side wherein is the ray structure layer 135 of 800～1200 microns long.During less than 800 microns, light-emitting area can reduce by electrode 115 when the length of at least one side, and during less than 1200 microns, can effectively supply with electric current by electrode 115 when the length of at least one side.For example, to can be applicable to length and width be the ray structure layer 135 of 1000 microns to electrode 115 shown in Figure 13.
With the area that electrode 115 occupies, compare, electrode 115 as above can reduce resistance and make electric current effectively distribute.
Figure 14 is the view of another example of the plane-shaped electrode in the luminescent device that is presented at according to an embodiment of the invention.
With reference to figure 1 and 14, electrode 115 forms and can comprise on the first conductive semiconductor layer 110: the outer electrode 115a that extends along the first conductive semiconductor layer 110 Shang De edges, top and the internal electrode 115b that outer electrode 115a is connected with outer electrode 115a.
Outer electrode 115a comprises: the first outer electrode 115a1, the second outer electrode 115a2, the 3rd outer electrode 115a3 and be section's electrode 115a4 all round.In addition, internal electrode 115b can comprise the first internal electrode 115b1, the second internal electrode 115b2 and the 3rd internal electrode 115b3.
Outer electrode 115a can be formed in outermost 50 microns from the first conductive semiconductor layer 110 at least in part, and can contact with passivation layer 180.
Outer electrode 115a can be set to have the rectangle at four He Si angles, limit, and comprises: the first outer electrode 115a1 that extends along first direction and the second outer electrode 115a2 and the 3rd outer electrode 115a3 that extends along the second direction perpendicular to first direction and the be section's electrode 115a4 all round.
The 115c of single pad unit can comprise: the first single pad 115c1 of unit and the 115c2 of the second single pad unit, wherein the first 115c1 of single pad unit can be positioned at the junction of the first outer electrode 115a1 and the 3rd outer electrode 115a3, and the second 115c2 of single pad unit can be positioned at the first outer electrode 115a1 and the junction of section's electrode 115a4 all round.
Internal electrode 115b comprises: the first internal electrode 115b1 that extends along second direction and the first outer electrode 115a1 is connected with the second outer electrode 115a2 and the second internal electrode 115b2 and along the 3rd outer electrode 115a3 that also will extend along second direction of first direction extension and the the 3rd internal electrode 115b3 of being connected of section's electrode 115a4 all round.
Distance A between the first outer electrode 115a1 and the 3rd internal electrode 115b3 can greater than between the second outer electrode 115a2 and the 3rd internal electrode 115b3 apart from B.
In addition, the distance B between the distance C between the 3rd outer electrode 115a3 and the first internal electrode 115b1, the first internal electrode 115b1 and the second internal electrode 115b2, the second internal electrode 115b2 and all round between section's electrode 115a4 can be basic identical apart from E.
In addition, the width of at least a portion of outer electrode 115a can be greater than the width of internal electrode 115b.In addition, the width of at least a portion of outer electrode 115a can be greater than the width of the other parts of outer electrode 115a.
For example, the first outer electrode 115a1 can form on width greater than internal electrode 115b, and the first outer electrode 115a1 can form on width greater than the second outer electrode 115a2.
In addition, the width near the first outer electrode 115a1 in the width of section's electrode 115a4 can be greater than the width near the second outer electrode 115a2 all round for the 3rd outer electrode 115a3 and the.
Internal electrode 115b will be divided into a plurality of zones by the interior zone that outer electrode 115a surrounds.Near the zone of the first outer electrode 115a1 with Breadth Maximum in described zone on area greater than the zone near the second outer electrode 115a2.
According to the electrode 115 of the luminescent device of embodiment shown in Figure 14, can be applicable to a side wherein is the ray structure layer 135 of 800～1200 microns long.During less than 800 microns, light-emitting area can reduce by electrode 115 when the length of at least one side, and during less than 1200 microns, can effectively supply with electric current by electrode 115 when the length of at least one side.For example, to can be applicable to length and width be the ray structure layer 135 of 1000 microns to electrode 115 shown in Figure 14.
With the area that electrode 115 occupies, compare, electrode 115 as above can reduce resistance and make electric current effectively distribute.
Figure 15 is the view of another example of the plane-shaped electrode in the luminescent device that is presented at according to an embodiment of the invention.
With reference to figure 1 and 15, electrode 115 forms and can comprise on the first conductive semiconductor layer 110: the outer electrode 115a that extends along the first conductive semiconductor layer 110 Shang De edges, top and the internal electrode 115b that outer electrode 115a is connected with outer electrode 115a.
Outer electrode 115a comprises: the first outer electrode 115a1, the second outer electrode 115a2, the 3rd outer electrode 115a3 and be section's electrode 115a4 all round.In addition, internal electrode 115b can comprise the first internal electrode 115b1 and the second internal electrode 115b2.
Outer electrode 115a can be formed in outermost 50 microns from the first conductive semiconductor layer 110 at least in part, and can contact with passivation layer 180.
Outer electrode 115a can be set to have the rectangle at four He Si angles, limit, and can comprise: the first outer electrode 115a1 that extends along first direction and the second outer electrode 115a2 and the 3rd outer electrode 115a3 that extends along the second direction perpendicular to first direction and the be section's electrode 115a4 all round.
The 115c of single pad unit can comprise: the first single pad 115c1 of unit and the 115c2 of the second single pad unit, wherein the first 115c1 of single pad unit can be positioned at the junction of the first outer electrode 115a1 and the 3rd outer electrode 115a3, and the second 115c2 of single pad unit can be positioned at the first outer electrode 115a1 and the junction of section's electrode 115a4 all round.
Internal electrode comprises: that extend and the first internal electrode 115b1 and the second internal electrode 115b2 that will with the second outer electrode 115a2, be connected along the first outer electrode 115a1 that first direction extends along second direction.
Distance B between distance C between the 3rd outer electrode 115a3 and the first internal electrode 115b1, the first internal electrode 115b1 and the second internal electrode 115b2, the second internal electrode 115b2 and all round between section's electrode 115a4 can be basic identical apart from E.
As described in reference Figure 13 and 14, in electrode 115 shown in Figure 15, the width of at least a portion of outer electrode 115a can be greater than the width of internal electrode 115b, and the width of at least a portion of outer electrode 115a can be greater than the other parts of outer electrode 115a.For example, the first outer electrode 115a1 can form on width greater than internal electrode 115b, and the first outer electrode 115a1 can form on width greater than the second outer electrode 115a2.Obviously, as shown in figure 15, outer electrode 115a and internal electrode 115b can form has same widths.
According to the electrode 115 of the luminescent device of embodiment shown in Figure 15, can be applicable to a side wherein is the ray structure layer 135 of 800～1200 microns long.During less than 800 microns, light-emitting area can reduce by electrode 115 when the length of at least one side, and during less than 1200 microns, can effectively supply with electric current by electrode 115 when the length of at least one side.For example, to can be applicable to length and width be the ray structure layer 135 of 1000 microns to electrode 115 shown in Figure 15.
With the area that electrode 115 occupies, compare, electrode 115 as above can reduce resistance and make electric current effectively distribute.
Figure 16 is the view of another example of the plane-shaped electrode in the luminescent device that is presented at according to an embodiment of the invention.
With reference to figure 1 and 16, electrode 115 forms and can comprise on the first conductive semiconductor layer 110: the outer electrode 115a that extends along the first conductive semiconductor layer 110 Shang De edges, top and the internal electrode 115b that outer electrode 115a is connected with outer electrode 115a.
Outer electrode 115a comprises: the first outer electrode 115a1, the second outer electrode 115a2, the 3rd outer electrode 115a3 and be section's electrode 115a4 all round.
Outer electrode 115a can be formed in outermost 50 microns from the first conductive semiconductor layer 110 at least in part, and can contact with passivation layer 180.
Outer electrode 115a can be set to have the rectangle at four He Si angles, limit, and can comprise: the first outer electrode 115a1 that extends along first direction and the second outer electrode 115a2 and the 3rd outer electrode 115a3 that extends along the second direction perpendicular to first direction and the be section's electrode 115a4 all round.
The 115c of single pad unit can be positioned at the junction of the first outer electrode 115a1 and internal electrode 115b.Internal electrode 115b extends and will with the second outer electrode 115a2, be connected along the first outer electrode 115a1 that first direction extends along second direction.
Distance C between the 3rd outer electrode 115a3 and internal electrode 115b and internal electrode 115b and between section's electrode 115a4, distance B can be basic identical all round.
As described in reference Figure 13 and 14, in electrode 115 shown in Figure 16, the width of at least a portion of outer electrode 115a can be greater than the width of internal electrode 115b, and the width of at least a portion of outer electrode 115a can be greater than the other parts of outer electrode 115a.For example, the first outer electrode 115a1 can form on width greater than internal electrode 115b, and the first outer electrode 115a1 can form on width greater than the second outer electrode 115a2.Obviously, as shown in figure 16, outer electrode 115a and internal electrode 115b can form has same widths.
According to the electrode 115 of the luminescent device of embodiment shown in Figure 16, can be applicable to a side wherein is the ray structure layer 135 of 400～800 microns long.During less than 400 microns, light-emitting area can reduce by electrode 115 when the length of at least one side, and during less than 800 microns, by electrode 115, can effectively supply with electric current when the length of at least one side.For example, to can be applicable to length and width be the ray structure layer 135 of 600 microns to electrode 115 shown in Figure 16.
With the area that electrode 115 occupies, compare, electrode 115 as above can reduce resistance and make electric current effectively distribute.
Figure 17 is the view of another example of the plane-shaped electrode in the luminescent device that is presented at according to an embodiment of the invention.
With reference to figure 1 and 17, electrode 115 forms and can comprise on the first conductive semiconductor layer 110: the outer electrode 115a that extends along the first conductive semiconductor layer 110 Shang De edges, top and the internal electrode 115b that outer electrode 115a is connected with outer electrode 115a.
Outer electrode 115a comprises: the first outer electrode 115a1, the second outer electrode 115a2, the 3rd outer electrode 115a3 and be section's electrode 115a4 all round.In addition, internal electrode 115b can comprise the first internal electrode 115b1 and the second internal electrode 115b2.
Outer electrode 115a can be formed in outermost 50 microns from the first conductive semiconductor layer 110 at least in part, and can contact with passivation layer 180.
Outer electrode 115a can be set to have the rectangle at four He Si angles, limit, and comprises: the first outer electrode 115a1 that extends along first direction and the second outer electrode 115a2 and the 3rd outer electrode 115a3 that extends along the second direction perpendicular to first direction and the be section's electrode 115a4 all round.
The 115c of single pad unit can be positioned at the junction of the first outer electrode 115a1 and the first internal electrode 115b1.
Internal electrode 115b comprises: the first internal electrode 115b1 that extends along second direction and the first outer electrode 115a1 is connected with the second outer electrode 115a2 and along the 3rd outer electrode 115a3 that also will extend along second direction of first direction extension and the second internal electrode 115b2 of being connected of section's electrode 115a4 all round.
Distance A between the first outer electrode 115a1 and the second internal electrode 115b2 can greater than between the second outer electrode 115a2 and the second internal electrode 115b2 apart from B.
In addition, the distance C between the 3rd outer electrode 115a3 and the first internal electrode 115b1 and the first internal electrode 115b1 and distance B between section's electrode 115a4 can be basic identical all round.
As described in reference Figure 13 and 14, in electrode 115 shown in Figure 17, the width of at least a portion of outer electrode 115a can be greater than the width of internal electrode 115b, and the width of at least a portion of outer electrode 115a can be greater than the other parts of outer electrode 115a.For example, the first outer electrode 115a1 can form on width greater than internal electrode 115b, and the first outer electrode 115a1 can form on width greater than the second outer electrode 115a2.Obviously, as shown in figure 17, outer electrode 115a and internal electrode 115b can form has same widths.
Internal electrode 115b will be divided into a plurality of zones by the interior zone that outer electrode 115a surrounds.In described zone, near the zone of the first outer electrode 115a1 on area greater than the zone near the second outer electrode 115a2.
According to the electrode 115 of the luminescent device of embodiment shown in Figure 17, can be applicable to a side wherein is the ray structure layer 135 of 400～800 microns long.During less than 400 microns, light-emitting area can reduce by electrode 115 when the length of at least one side, and during less than 800 microns, by electrode 115, can effectively supply with electric current when the length of at least one side.For example, to can be applicable to length and width be the ray structure layer 135 of 600 microns to electrode 115 shown in Figure 17.
With the area that electrode 115 occupies, compare, electrode 115 as above can reduce resistance and make electric current effectively distribute.
Figure 18 and 19 is views of the light output of explanation electrode structure in luminescent device according to an embodiment of the invention.
According to the electrode of a contrast embodiment, be shown in Figure 18, the electrode of describing with reference to Figure 15 is shown in Figure 19.
Electrode 115 shown in Figure 180 and electrode 115 shown in Figure 19 have essentially identical shape.
Yet, according to the electrode 115 of contrast embodiment shown in Figure 180, be arranged on from the first outermost distance more than 50 microns in conductive semiconductor layer 110 tops, and electrode 115 shown in Figure 19 is at least partially disposed in outermost 50 microns from the top of the first conductive semiconductor layer 110 and contacts with passivation layer 180.
According to experiment, visible: as in contrast embodiment shown in Figure 180, to measure light and be output as 282mW, in embodiment shown in Figure 19, measure light and be output as 304mW, when the structure that only changes electrode 115 and while keeping other condition identical, light output improves 8%.
Figure 20 is that the luminescent device that comprises the electrode of embodiment shown in Figure 13 is schemed with the optical output ratio of the luminescent device of the electrode that comprises the embodiment of contrast shown in Figure 18.
According to experiment, visible: when electrode 115 is set to as Figure 13 with as shown in 18 and while keeping other condition identical, with the light output of the luminescent device of the electrode that comprises contrast embodiment shown in Figure 180, compare, comprise that the light output of luminescent device of electrode shown in Figure 13 is quite excellent.
Figure 11 is the view of explanation according to the luminescent device of the second embodiment.
Similar with the structure of luminescent device according to the first embodiment according to the structure of the luminescent device of the second embodiment.Yet in the luminescent device according to the second embodiment, ohmic contact layer 150 extends to the side of luminescent device.
That is, ohmic contact layer 150 is arranged on the side and bottom of protective layer 140, and protective layer 140 and knitting layer 170 are spaced apart by ohmic contact layer 150.
Figure 12 is the view of explanation according to the luminescent device of the 3rd embodiment.
Similar with the structure of luminescent device according to the first embodiment according to the structure of the luminescent device of the 3rd embodiment.Yet in the luminescent device according to the 3rd embodiment, reflector 160 extends to the side of luminescent device.
That is, reflector 160 is arranged on the bottom of protective layer 140 and ohm layer 150, and protective layer 140 and knitting layer 170 are spaced apart by ohmic contact layer 160.On reflector 160, partly form protective layer 140.
When luminous efficiency can be improved by more effectively reflecting the light that is produced by active layer 120 in the Shang Shi， reflector, whole top 160 that is formed on knitting layer 170.
Although do not show, ohmic contact layer 150 and reflector 160 can be set to extend to the side of luminescent device.
The method of manufacturing according to the luminescent device of an embodiment is below described.Yet, with the part that repeats as mentioned above, be not described or be briefly described.
The view of the method for luminescent device is according to an embodiment of the invention manufactured in Fig. 2～10 for explanation.
With reference to figure 2, on growth substrates 101, form ray structure layer 135.
Growth substrates 101 can be by sapphire (Al 2O 3), making one of at least in SiC, GaAs, GaN, ZnO, Si, GaP, InP and Ge, but be not limited to this.
Ray structure layer 135 can form by first conductive semiconductor layer 110 of growing successively on growth substrates 101, active layer 120 and the second conductive semiconductor layer 130.
Ray structure layer 135 can pass through MOCVD (metal organic chemical vapor deposition), CVD (chemical vapour deposition (CVD)), PECVD (chemical vapour deposition (CVD) that plasma strengthens), MBE (molecular beam epitaxy) and HVPE (hydride gas-phase epitaxy) and form, but is not limited to this.
Simultaneously, between ray structure layer 135 and growth substrates 101, can form resilient coating (not shown) and/or unadulterated nitride layer (not shown) to reduce lattice constant difference.
With reference to figure 3, on ray structure layer 135, form protective layer 140, corresponding to the unit chip area.
Can around the unit chip area, form by mask pattern protective layer.Protective layer can form with various deposition processs.
Especially, when protective layer 140 for conductive protecting layer and comprise in Ti, Ni, Pt, Pd, Rh, Ir and W at least any one the time, protective layer 140 can form by sputter has high concentration, makes it in the isolation etching, can not break for fragment.
With reference to figure 4, on the second conductive layer 130, can form current barrier layer 145.Current barrier layer 145 can form by mask pattern.
For example, current barrier layer 145 can form SiO on the second conductive semiconductor layer 130 2After layer, by mask pattern, form.
When protective layer 140 was non-conductive protective layer, protective layer 140 and current barrier layer 145 can be manufactured from the same material.In this case, can in a technique rather than in specific technique, side by side form protective layer 140 and current barrier layer 145.
For example, protective layer 140 and current barrier layer 145 can form SiO on the second conductive semiconductor layer 130 2After layer, by mask pattern, form simultaneously.
With reference to figure 5 and 6, on the second conductive semiconductor layer 130 and current barrier layer 145, form ohmic contact layer 150, then can on ohmic contact layer 150, form reflector 160.
When protective layer 150 was conductive protecting layer, ohmic contact layer 150 can be made by the material identical with protective layer 140, and wherein protective layer 140 and ohmic contact layer 150 form after can on the second conductive semiconductor layer 130, forming current barrier layer 145 simultaneously.
Ohmic contact layer 150 and reflector can be by any one formation in for example electron beam deposition, sputter and PECVD (chemical vapour deposition (CVD) that plasma strengthens).
Different selections can be carried out in the zone that wherein forms ohmic contact layer 150 and reflector 160, and can form with reference to Figure 11 and 12 luminescent devices according to other embodiment of describing according to the zone that wherein forms ohmic contact layer 150 and/or reflector 160.
With reference to figure 7, on reflector 160 and protective layer 140, form conductive support substrate 175, centre has knitting layer 170.
Knitting layer 170 contacts with reflector 160, ohmic contact layer 150 and passivation layer 140, makes the bonding force between reflector 160, ohmic contact layer 150 and passivation layer 140 to strengthen.
Conductive support substrate 175 is attached to knitting layer 170.Although in exemplary embodiment, conductive support substrate 175 engages by knitting layer 170, but conductive support substrate 175 plating or deposition.
With reference to figure 8, from ray structure layer 135, remove growth substrates 101.In Fig. 8, structure shown in Figure 7 is overturn.
Growth substrates 101 can remove by laser lift-off or chemical stripping.
With reference to figure 9, by each unit chip is implemented to the isolation etching, ray structure layer 135 is divided into to a plurality of ray structure layers 135.
For example, the isolation etching can be by for example ICP (inductively coupled plasma) enforcement of dry ecthing.
With reference to Figure 10, on protective layer 140 and ray structure layer 135, form passivation layer 180 and optionally remove passivation layer 180, make the top that exposes the first conductive semiconductor layer 110.
In addition, on the top of the first conductive semiconductor layer 110, form coarse patterns 112 to improve light extraction efficiency, and on coarse patterns 112, form electrode 115.Coarse patterns 112 can form by wet etching or dry ecthing.
In addition, by using chip separation process, structure is divided into to the unit chip area, can manufactures a plurality of luminescent devices.
Chip separation process for example can comprise: by utilize blade apply physical force carry out the disruption process of separating chips, by the chip interface radiation laser being carried out to the laser scribing technique of separating chips and comprising wet etching and the etching of dry ecthing, but be not limited to this.
Figure 21 is the cross-sectional view that comprises the light emitting device package of luminescent device according to an embodiment of the invention.
With reference to Figure 21, according to the light emitting device package of an embodiment, comprise: packaging body 10, the molded element 40 that is installed on the first electrode 31 and the second electrode 32 in packaging body 10, is installed on luminescent device 100 in packaging body 10 and that be electrically connected to the first electrode 31 and the second electrode 32 and covers luminescent device 100.
Packaging body 10 can comprise silicon materials, synthetic resin material and metal material and can have chamber, and described chamber has the side of inclination.
The first electrode 31 and the second electrode 32 electricity isolation are also powered to luminescent device 100.In addition, the first electrode 31 and the second electrode 32 can improve optical efficiency by the light that luminescent device 100 produces by reflection, and the heat that is produced by luminescent device 100 can be distributed to outside.
Luminescent device 100 can be arranged on packaging body 10 or the first electrode 31 and the second electrode 32 on.
Luminescent device 100 can come to be electrically connected to the first electrode 31 and the second electrode 32 by any one in lead-in wire method, Flipchip method and chip connection method.As example, luminescent device 100 is electrically connected to pass through directly to contact with the second electrode 32 by wire 50 with the first electrode 31 and is electrically connected in embodiments.
Molded element 40 can be protected luminescent device 100 by covering luminescent device 100.In addition, in molded element 40, can comprise fluorescent material to change the light wavelength by luminescent device 100 emissions.
A plurality of light emitting device packages according to an embodiment are set on substrate, and in the light path by the light emitting device package emission, can be provided as light guide plate, prism plate, diffuser plate and the fluorescent plate of optics.Light emitting device package, substrate and optics can be used as back light unit or lighting unit, and for example photosystem can comprise back light unit, lighting unit, indicating device, lamp and street lamp.
Figure 22 for explanation comprise according to an embodiment of the invention luminescent device or the view of the back light unit of light emitting device package.Yet back light unit 1100 shown in Figure 22 is an example of illuminator, the invention is not restricted to this.
With reference to Figure 22, back light unit 1100 can comprise: underframe 1140, be arranged on the light-guide device 1120 in underframe 1140 and be arranged at least one side of light-guide device 1120 or the light emitting module 1110 on bottom.In addition, at light-guide device, 1120 times reflecting plate 1130 can be set.
Underframe can form the box-like opened at top to hold light-guide device 1120, light emitting module 1110 and reflecting plate 1130, and can be made by metal or resin, but described material is not limited to this.
Light emitting module 1110 can comprise substrate 700 and be arranged on a plurality of light emitting device packages 600 on substrate 700.Light emitting device package 600 can be light-guide device 1120 light is provided.Although exemplarily explanation in embodiments, light emitting device package 600 is arranged on the substrate 700 in light emitting module 1110, according to the luminescent device 100 of an embodiment, can directly install thereon.
As shown in drawings, light emitting module 1110 can be arranged on any one medial surface at least of underframe 1140, and at least one side that therefore can be light-guide device 1120 provides light.
Yet light emitting module 1110 can be arranged on underframe 1140 times, for the bottom of light-guide device 1120 provides light, according to the design of back light unit 1100, can carry out various changes, and be not limited to this.
Light-guide device 1120 can be arranged in underframe 1140.Light-guide device 1120 can be converted into the light that is provided by light emitting module 1110 surface light and it is directed to the display floater (not shown).
Light-guide device 1120 can be for example LGP (light guide panel).Light guide panel can for example be made one of in PMMA (polymethyl methacrylate) and PET (PETG), PC (Merlon), COC and PEN (PEN) resin by acrylic resin for example.
On light-guide device 1120, optical sheet 1150 can be set.
Optical sheet 1150 can comprise in for example diffuser plate, light collecting plate, blast plate and fluorescent plate one of at least.For example, optical sheet 1150 can form by stacking diffuser plate, light collecting plate, blast plate and fluorescent plate.In this structure, diffuser plate 1150 will be spread equably by the light of light emitting module 1110 emissions, and the light of diffusion can be concentrated to the display floater (not shown) by light collecting plate.In this structure, from the light of light collecting plate, be the light of random polarization, the blast plate can improve the polarisation of light degree from light collecting plate.Light collecting plate for example can be level or/and vertical prism plate.In addition, the blast plate can be for example two brightness enhancement film.In addition, fluorescent plate can be light-passing board or the film that comprises fluorescent material.
Reflecting plate 1130 can be arranged on light-guide device 1120 times.Reflecting plate 1130 can be by the reflection of the light by light-guide device 1120 bottom emission, towards the exiting surface of light-guide device 1120.
Reflecting plate 1130 can by the resin with high reflectance for example PET, PC and polyvinyl chloride resin make, but be not limited to this.
Figure 23 for explanation comprise according to an embodiment of the invention luminescent device or the view of the lighting unit of light emitting device package.Yet lighting unit 1200 shown in Figure 23 is not limited to this for an example of illuminator.
With reference to Figure 23, lighting unit 1200 can comprise: housing 1210, be mounted to the lighting module of housing 1210 and be mounted to housing 1210 and the binding post 1220 of electric power is provided by external power source.
Preferred housing 1210 is made by the material with excellent heat dispersion performance, for example can be made by metal or resin.
At least one light emitting device package 600 that light emitting module 1230 can comprise substrate 700 and install on substrate 700.Although exemplarily explanation in embodiments, light emitting device package 600 is arranged on the substrate 700 in light emitting module 1110, according to the luminescent device 100 of an embodiment, can directly install thereon.
Substrate 700 can form by printed circuit pattern on insulator, and can comprise for example common PCB (printed circuit board (PCB)), metal-cored PCB, flexible PCB and ceramic PCB.
In addition, substrate 700 is made by the material of usable reflection light, or surface color for example white and the silver color that can have usable reflection light.
At least one light emitting device package 600 can be installed on substrate 700.Light emitting device package 600 can comprise at least one LED (light-emitting diode) separately.Light-emitting diode can comprise and produces for example red, green, blue or white color light-emitting diode and produce ultraviolet UV light-emitting diode of color.
Light emitting module 1230 can be set to have the various combinations of light-emitting diode to realize the effect of color and brightness.For example, can make up white light-emitting diode, red light emitting diodes and green LED to guarantee high CRI.In addition, fluorescent plate can further be set in the mobile route of the light by light emitting module 1230 emissions also will be changed by the light wavelength of light emitting module 1230 emissions.For example, when the light by light emitting module 1230 emissions has blue wave band, in fluorescent plate, can comprise yellow fluorescent substance, and by fluorescent plate, finally be shown as white light by the light of light emitting module 1230 emissions.
Binding post 1220 can be by being electrically connected and fetching power supply with light emitting module 1230.According to embodiment shown in Figure 23, binding post 1220 rotates and inserts external power source, as socket, but is not limited to this.For example, binding post 1220 can form the pin-shaped that can insert in external power source and maybe can with external power source, be connected by wire.
Due in illuminator as above, in the mobile route by the light of light emitting module emission, arrange in light-guide device, diffuser plate, light collecting plate, blast plate and fluorescent plate at least any one, so can realize the optical effect of expecting.
Luminescent device or the light emitting device package of the optical efficiency that as mentioned above, illuminator can be by comprising operating voltage with reduction and improvement are realized high optical efficiency and reliability.
To any quoting of " embodiment ", " embodiment ", " exemplary " etc., expression is contained at least one embodiment of the present invention with concrete feature, structure or the characteristic of embodiment associated description in this manual.In different local these words that occur of specification, needn't all relate to identical embodiment.In addition, when in conjunction with any embodiment, describing concrete feature, structure or characteristic, think other feature, structure or association of characteristics of this feature, structure or characteristic and embodiment all within those skilled in the art's scope.
Although with reference to its some illustrative embodiments, described some embodiments, it should be understood that those skilled in the art can design a lot of other change and embodiment, these also fall in the spirit and scope of principle of the present disclosure.More specifically, in the scope of the disclosure, accompanying drawing and appended claim, in the member of assembled arrangement of the present invention and/or structure, may have various variations and change.Except the variation and change of member and/or structure, to those skilled in the art, alternative purposes can be also apparent.
In addition, the invention still further relates to following technical scheme:
1. luminescent device comprises:
Conductive support substrate;
Knitting layer on described conductive support substrate;
Reflector on described knitting layer;
Ohmic contact layer on described reflector;
Current barrier layer on described ohmic contact layer;
The protective layer of the periphery office on described knitting layer;
Ray structure layer on described current barrier layer, described ohmic contact layer and described protective layer; With
Electrode on described ray structure layer, described electrode and described current barrier layer and described protective layer are overlapping at least partly,
Wherein said protective layer comprises: conductance lower than the material of described reflector or described ohmic contact layer, electrical insulating material or with the material of described ray structure layer Schottky contacts.
2. according to the described luminescent device of project 1, wherein said ray structure layer has the side of inclination, and the side of described inclination and described protective layer are overlapping.
3. according to the described luminescent device of project 1, comprise passivation layer, described passivation layer contacts with the top of described ray structure layer and the top of side and described protective layer.
4. according to the described luminescent device of project 1, wherein said reflector is formed on the whole top of described knitting layer, and described protective layer partly is formed on described reflector.
5. according to the described luminescent device of project 1, the bottom of wherein said current barrier layer contacts with described ohmic contact layer with side, the top of described current barrier layer contacts with described ray structure layer, and the width of described current barrier layer is 1.1～1.3 times of width of described electrode.
6. according to the described luminescent device of project 1, wherein on the top of described ray structure layer, form coarse patterns.
7. according to the described luminescent device of project 1, wherein said electrode comprises: the outer electrode that extends along the edge at the top of described ray structure layer, the single pad unit that is arranged on inside and the internal electrode that connect described outer electrode of described outer electrode and forms at described outer electrode place.
8. according to the described luminescent device of project 7, at least a portion of wherein said outer electrode on width greater than described internal electrode.
9. according to the described luminescent device of project 7, wherein said internal electrode extends along first direction with perpendicular to the second direction of described first direction.
10. according to the described luminescent device of project 7, the part of wherein said outer electrode on width greater than other parts.
11. according to the described luminescent device of project 10, the interior zone that is wherein surrounded by described outer electrode is divided into a plurality of zones by described internal electrode, the area in the zone that the area in the zone that contacts with the outer electrode with large width in described a plurality of zones contacts greater than the outer electrode with having little width.
12. a light emitting device package comprises:
Packaging body;
Be mounted to the first electrode layer and the second electrode lay of described packaging body; With
According to the described luminescent device of project 1, described luminescent device is mounted to described packaging body and is electrically connected to described the first electrode layer and described the second electrode lay.
13. a luminescent device comprises:
Conductive support substrate;
Ray structure layer on described conductive support substrate;
Conductive protecting layer, described conductive protecting layer are arranged on the periphery office on described conductive support substrate and partly are arranged between described conductive support substrate and described ray structure layer; With
Be arranged on described ray structure layer and with described conductive protecting layer overlapping electrode at least partly,
Wherein said ray structure layer has the side of inclination, and
The side of described inclination and described conductive protecting layer are overlapping.
14., according to the described luminescent device of project 13, comprising: be arranged on the ohmic contact layer between described ray structure layer and described conductive support substrate.
15., according to the described luminescent device of project 14, comprising: be arranged on the reflector between described ohmic contact layer and described conductive support substrate.
16., according to the described luminescent device of project 14, comprising: part is arranged on the current barrier layer between described ray structure layer and described ohmic contact layer.
17., according to the described luminescent device of project 15, comprising: be arranged on the knitting layer between described reflector and described conductive support substrate.
18. according to the described luminescent device of project 13, wherein said conductive protecting layer comprises: any one or transparent conductive oxide film at least in Ti, Ni, Pt, Pd, Rh, Ir and W.
19. according to the described luminescent device of project 13, also comprise passivation layer, described passivation layer contacts with the top of side and described conductive protecting layer with the top of described ray structure layer.
20. according to the described luminescent device of project 17, wherein said reflector is formed on the whole top of described knitting layer, described conductive protecting layer partly is formed on described reflector.
21. according to the described luminescent device of project 16, the bottom of wherein said current barrier layer contacts with described ohmic contact layer with side, the top of described current barrier layer contacts with described ray structure layer, and the width of described current barrier layer is 1.1～1.3 times of width of described electrode.
22. according to the described luminescent device of project 13, wherein said electrode comprises: the outer electrode that extends along the edge at the top of described ray structure layer, the single pad unit that is arranged on inside and the internal electrode that connect described outer electrode of described outer electrode and forms at described outer electrode place.
23. according to the described luminescent device of project 22, at least a portion of wherein said outer electrode on width greater than described internal electrode.
24. according to the described luminescent device of project 22, wherein said internal electrode extends along first direction with perpendicular to the second direction of described first direction.
25. according to the described luminescent device of project 22, the interior zone that is wherein surrounded by described outer electrode is divided into a plurality of zones by described internal electrode, the area in the zone that the area in the zone that contacts with the outer electrode with large width in described a plurality of zones contacts greater than the described outer electrode with having little width.
26. a light emitting device package comprises:
Packaging body;
Be mounted to the first electrode layer and the second electrode lay of described packaging body; With
According to the described luminescent device of project 13, described luminescent device is mounted to described packaging body and is electrically connected to described the first electrode layer and described the second electrode lay.
27. a luminescent device comprises:
Conductive support substrate;
Ray structure layer on described conductive support substrate;
Protective layer, described protective layer are arranged on the periphery office on described conductive support substrate and partly are arranged between described conductive support substrate and described ray structure layer; With
On described ray structure layer with at least part of overlapping electrode of described protective layer,
Wherein said electrode comprises: outer electrode, to be arranged on described outer electrode inner and connect first and the internal electrode of second portion and the single pad unit that is connected with described outer electrode of described outer electrode.
28. according to the described luminescent device of project 27, at least a portion of wherein said outer electrode on width greater than described internal electrode.
29. according to the described luminescent device of project 27, at least a portion of wherein said outer electrode on width greater than the other parts of described outer electrode.
30. according to the described luminescent device of project 27, wherein said electrode is at least partially disposed in 50 microns from the side at the top of described ray structure layer.
31., according to the described luminescent device of project 27, also comprise: partly be formed on the side of described ray structure layer and the passivation layer on top, and at least a portion of described electrode contacts with described passivation layer.
32. according to the described luminescent device of project 27, wherein said protective layer is conductive protecting layer, described conductive protecting layer comprises the transparent conductive oxide film, or comprise or Ti, Ni, Pt, Pd, Rh, Ir and W at least any one.
33. according to the described luminescent device of project 27, wherein said protective layer is non-conductive protective layer, described non-conductive protective layer comprise electrical insulating material or with the material of described ray structure layer Schottky contacts.
34. according to the described luminescent device of project 27, wherein said outer electrode comprises: the first outer electrode that forms along first direction and the second outer electrode and extend and the 3rd outer electrode that described the first outer electrode and described the second outer electrode are coupled together and the section's electrode all round along second direction, and
Described internal electrode comprises: along described second direction, form, be arranged on the first internal electrode that described the 3rd outer electrode and described the couples together between section's electrode and by described the first outer electrode and described the second outer electrode all round.
35. according to the described luminescent device of project 27, wherein said outer electrode comprises: the first outer electrode that forms along first direction and the second outer electrode and the 3rd outer electrode that described the first outer electrode and described the second outer electrode are coupled together and the be section's electrode all round, and
Described internal electrode comprises: along second direction form, be arranged on described the 3rd outer electrode and described all round between section's electrode and the first internal electrode that will described the first outer electrode couples together with described the second outer electrode and along described first direction formation, be arranged between described the first outer electrode and described the second outer electrode also described the 3rd outer electrode and described the second internal electrode of coupling together of section's electrode all round.
36. according to the described luminescent device of project 35, the distance between wherein said the first outer electrode and described the second internal electrode is greater than the distance between described the second outer electrode and described the second internal electrode.
37. according to the described luminescent device of project 27, wherein said outer electrode comprises: the first outer electrode that forms along first direction and the second outer electrode and form and the 3rd outer electrode that described the first outer electrode and described the second outer electrode are coupled together and the section's electrode all round along second direction, and
Described internal electrode comprises: along described second direction, form, be arranged on the first internal electrode and the second internal electrode that described the 3rd outer electrode and described the couples together between section's electrode and by described the first outer electrode and described the second outer electrode all round.
38. according to the described luminescent device of project 27, wherein said outer electrode comprises: the first outer electrode that forms along first direction and the second outer electrode and the 3rd outer electrode that described the first outer electrode and described the second outer electrode are coupled together and the be section's electrode all round, and
Described internal electrode comprises: along second direction extend, be arranged on described the 3rd outer electrode and described all round between section's electrode and the first internal electrode that will described the first outer electrode couples together with described the second outer electrode and the second internal electrode and along described first direction formation, be arranged between described the first outer electrode and described the second outer electrode also described the 3rd outer electrode and described the 3rd internal electrode that couples together of section's electrode all round.
39. according to the described luminescent device of project 38, the distance between wherein said the first outer electrode and described the 3rd internal electrode is greater than the distance between described the second outer electrode and described the 3rd internal electrode.
40. according to the described luminescent device of project 27, wherein said outer electrode comprises: the first outer electrode that forms along first direction and the second outer electrode and the 3rd outer electrode that described the first outer electrode and described the second outer electrode are coupled together and the be section's electrode all round, and
Described internal electrode comprises: along second direction, form, be arranged on described the 3rd outer electrode and described all round between section's electrode and the first internal electrode, the second internal electrode and the 3rd internal electrode that will described the first outer electrode couple together with described the second outer electrode, and along described first direction formation, be arranged between described the first outer electrode and described the second outer electrode also described the 3rd outer electrode and described the 4th internal electrode that couples together of section's electrode all round.
41. according to the described luminescent device of project 40, the distance between wherein said the first outer electrode and described the 4th internal electrode is greater than the distance between described the second outer electrode and described the 4th internal electrode.
42. a light emitting device package comprises:
Packaging body;
Be mounted to the first electrode layer and the second electrode lay of described packaging body; With
According to the described luminescent device of project 27, described luminescent device is mounted to described packaging body and is electrically connected to described the first electrode layer and described the second electrode lay.

Claims (18)

1. luminescent device comprises:
Conductive support substrate;
On described conductive support substrate and have a ray structure layer of the side of inclination;
Protective layer, described protective layer are arranged on the periphery office on described conductive support substrate and partly are arranged between described conductive support substrate and described ray structure layer; With
With at least part of overlapping electrode of the described protective layer on described conductive support substrate,
Wherein said electrode comprises: outer electrode, to be arranged on described outer electrode inner and connect first and the internal electrode of second portion and the single pad unit that is connected described outer electrode of described outer electrode, and
The side of the inclination of wherein said ray structure layer and described protective layer are overlapping at least in part.
2. luminescent device according to claim 1, the part of the top surface of wherein said protective layer exposes from the side of the described inclination of described ray structure layer.
3. luminescent device according to claim 1, also be included in ohmic contact layer and the current barrier layer between described ohmic contact layer and described ray structure layer on described conductive support substrate.
4. luminescent device according to claim 3, the width of wherein said current barrier layer are 0.9～1.3 times of width of described internal electrode.
5. luminescent device according to claim 3, wherein said ohmic contact layer is arranged on side and the bottom of described protective layer.
6. luminescent device according to claim 1, also be included in ohmic contact layer and reflector on described conductive support substrate.
7. luminescent device according to claim 6, wherein said reflector is arranged on the bottom of described protective layer and described ohmic contact layer.
8. luminescent device according to claim 3, the described ray structure layer of top contact of wherein said current barrier layer.
9. luminescent device according to claim 3, the described ohmic contact layer of the bottom of wherein said current barrier layer and contacts side surfaces.
10. luminescent device according to claim 3, wherein said current barrier layer is overlapping with described electrode at least in part.
11. luminescent device according to claim 3, wherein said outer electrode and described protective layer are overlapping, and described internal electrode and described current barrier layer are overlapping.
12. luminescent device according to claim 1, also be included in the knitting layer on described conductive support substrate.
13. luminescent device according to claim 1, also comprise passivation layer, top and the side of the described ray structure layer of described passivation layer contact.
14. luminescent device according to claim 1, wherein said protective layer comprise electrical insulating material or with the material of described ray structure layer Schottky contacts.
15. luminescent device according to claim 1 also comprises:
Knitting layer on described conductive support substrate;
Reflector on described knitting layer; With
Ohmic contact layer on described reflector,
Wherein said reflector is formed on the whole top of described knitting layer, and described protective layer partly is formed on described reflector.
16. luminescent device according to claim 1, also comprise passivation layer, the top of the described ray structure layer of described passivation layer contact and the top of side and described protective layer,
Wherein said passivation layer partly is formed on side and the top of described ray structure layer, and the described passivation layer of at least a portion of described electrode contact.
17. luminescent device according to claim 1, wherein said ray structure layer has the side of inclination, and the side of described inclination and described protective layer are overlapping.
18. a light emitting device package comprises:
Packaging body;
Be arranged on the first electrode layer and the second electrode lay on described packaging body; With
According to claim 1, the described luminescent device of any one in-17, described luminescent device is arranged on described packaging body.
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