CN103354247A - Electrolysis system and method for using the electrolysis for electrolysis - Google Patents
Electrolysis system and method for using the electrolysis for electrolysis Download PDFInfo
- Publication number
- CN103354247A CN103354247A CN2013102194685A CN201310219468A CN103354247A CN 103354247 A CN103354247 A CN 103354247A CN 2013102194685 A CN2013102194685 A CN 2013102194685A CN 201310219468 A CN201310219468 A CN 201310219468A CN 103354247 A CN103354247 A CN 103354247A
- Authority
- CN
- China
- Prior art keywords
- photovoltaic cell
- vmj
- electrolysis
- vmj photovoltaic
- battery unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000005868 electrolysis reaction Methods 0.000 title claims description 78
- 239000004065 semiconductor Substances 0.000 claims description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 229910052710 silicon Inorganic materials 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- 239000000463 material Substances 0.000 claims description 43
- 239000003792 electrolyte Substances 0.000 claims description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 28
- 230000015572 biosynthetic process Effects 0.000 claims description 26
- 239000012535 impurity Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 18
- 230000004044 response Effects 0.000 claims description 17
- 239000006185 dispersion Substances 0.000 claims description 15
- 230000004888 barrier function Effects 0.000 claims description 10
- 238000000354 decomposition reaction Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 6
- 230000033228 biological regulation Effects 0.000 claims description 5
- 230000004927 fusion Effects 0.000 claims 1
- 230000003595 spectral effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 16
- 239000002184 metal Substances 0.000 abstract description 16
- 230000008901 benefit Effects 0.000 abstract description 10
- 230000001965 increasing effect Effects 0.000 abstract description 9
- 230000009467 reduction Effects 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 7
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 239000003989 dielectric material Substances 0.000 abstract 2
- 239000000969 carrier Substances 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 81
- 235000012431 wafers Nutrition 0.000 description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 24
- 229910052739 hydrogen Inorganic materials 0.000 description 24
- 239000001257 hydrogen Substances 0.000 description 24
- 238000013461 design Methods 0.000 description 20
- 238000001228 spectrum Methods 0.000 description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 17
- 239000003054 catalyst Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 15
- 239000013078 crystal Substances 0.000 description 14
- 230000000694 effects Effects 0.000 description 14
- 230000009471 action Effects 0.000 description 13
- 238000006243 chemical reaction Methods 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 238000011161 development Methods 0.000 description 8
- 230000018109 developmental process Effects 0.000 description 8
- 230000031700 light absorption Effects 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 238000006722 reduction reaction Methods 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 239000000975 dye Substances 0.000 description 7
- 230000002708 enhancing effect Effects 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 239000008151 electrolyte solution Substances 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 150000001768 cations Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000010008 shearing Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 150000001450 anions Chemical class 0.000 description 4
- 230000037396 body weight Effects 0.000 description 4
- 238000005094 computer simulation Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 238000013082 photovoltaic technology Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010205 computational analysis Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000036647 reaction Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Photovoltaic cells and processes that mitigate recombination losses of photogenerated carriers are provided. To reduce recombination losses, diffuse doping layers in active photovoltaic (PV) elements are coated with patterns of dielectric material(s) that reduce contact between metal contacts and the active PV element. Various patterns can be utilized, and one or more surfaces of the PV element can be coated with one or more dielectrics. Vertical Multi-Junction photovoltaic cells can be produced with patterned PV elements, or unit cells. While patterned PV elements can increase series resistance of VMJ photovoltaic cells, and patterning one or more surfaces in the PV element can add complexity to a process utilized to produce VMJ photovoltaic cells, reduction of carrier losses at diffuse doping layers in a PV element increases efficiency of photovoltaic cells, and thus provide with PV operational advantages that outweigh increased manufacturing complexity. System to fabricate the photovoltaic cells is provided.
Description
The application be international application no be PCT/US2009/053576, Chinese application number to be 200980139221.4 denomination of invention be the dividing an application of the patent application of " photovoltaic cell and related application with treated surface ", the international filing date of original application is 2009 years 08 month 12 days.
Technical field
The request of the application's case is to the rights and interests of following application case: on August 15th, 2008 file an application and title for " solar cell (SOLAR CELL WITH PATTERNED CONTACTS) with patterned contact " the 61/089th, No. 389 U.S. Provisional Application cases, its request is for filing an application on August 5th, 2009 and title is the priority of the 12/535th, No. 952 U.S. patent application case of " photovoltaic cell (PHOTOVOLTAIC CELL WITH PATTERNED CONTACTS) with patterned contact "; On August 6th, 2009 file an application and title for " the vertical multijunction cell (VERTICAL MULTI JUNCTION CELL WITH TEXTURED SURFACE) with texturizing surfaces " the 12/536th, No. 982 U.S. patent application case, its request is for filing an application on August 14th, 2008 and title is the priority of the 61/088th, No. 921 U.S. Provisional Application case of " the vertical multijunction cell (VERTICAL MULTIJUNCTION CELL WITH TEXTURED SURFACE) with texturizing surfaces "; On August 6th, 2009 file an application and title for " photovoltaic cell (PHOTOVOLTAIC CELL WITH BUFFER ZONE) with buffer strip " the 12/536th, No. 987 U.S. patent application case, its request is for filing an application on August 14th, 2008 and title is the priority of the 61/088th, No. 936 U.S. Provisional Application case of " solar cell (SOLAR CELL WITH BUFFER ZONE) with buffer strip "; And on August 6th, 2009 file an application and title for " via the electrolysis (ELECTROLYSIS VIA VERTICAL MULTI-JUNCTION PHOTOVOLTAIC CELL) of vertical multi-junction photovoltaic battery " the 12/536th, No. 992 U.S. patent application case, its request is for filing an application on August 28th, 2008 and title is the priority of the 61/092nd, No. 531 U.S. Provisional Application case of " via the electrolysis (ELECTROLYSIS VIA VERTICAL MULTI-JUNCTION SOLAR CELL) of vertical multijunction solar cell ".Above the full text of each application case of reference is incorporated herein by reference.
Background technology
The limited supply of fossil energy and its demand of increase and the global environment that is associated destroyed ordered about the whole world and make great efforts to make and utilize the energy and correlation technique diversification.A kind of this type of resource is solar energy, and it adopts photovoltaic (PV) technology that light is converted to electricity.In addition, solar energy can be used for heat generation (for example, in solar furnace, steam generator etc.).Heliotechnics is generally implemented in a series of PV batteries or solar cell or its panel, and it receives daylight and be electric with sunlight conversion, and electricity can be passed in the power network subsequently.Reach major progress in the design of solar panel and in producing, it effectively increases efficient and reduces simultaneously its manufacturing cost.Along with developing the higher solar cell of efficient, the size of battery reduces, and reduces gradually and the actual property increase of the competitive rechargeable energy of tool in the non-renewable source of height requirement thereby cause adopting solar panel to provide substituting.For this reason, can dispose as solar energy collecting systems such as solar collectors solar energy be converted to the electricity that can be passed to power network and also gather in the crops heat.Except exploitation solar collector technology, also begun to utilize solar collector to develop solar cell.
The high intensity solar cell technology that is called vertical many knot VMJ solar cells is the array that is connected in series of edge illumination and the integral body joint of holding the small-sized vertical junction battery unit with electric contact.Described unique VMJ photovoltaic cell design can provide height to force down the series resistance output characteristic inherently, thereby makes it be suitable for ideally efficient performance in the high strength photovoltaic collector.Another key feature of VMJ solar cell is its simplicity of design that causes low manufacturing cost.
Can be according to the effectiveness of the performance data proof VMJ solar cell of in the scope of 100 to 2500 sun optically focused intensity, obtaining at the experimental VMJ solar cell with 40 knots that are connected in series, wherein output power density surpasses 400,000 watts/m under 25 volts
2, its efficient is near 20%.Should be appreciated that, the above-mentioned performance in the VMJ solar cell realizes by low manufacturing cost and the low complexity of making.Believe that this type of aspect is so that the photovoltaic collector system is the required boost motor of the more efficient and feasible needed practical technical performance of cost and business efficiency significantly solving global energy problem.In addition, any increase of battery efficiency (for example, exporting more watts) can directly reduce collector system size (for example, the lower cost that is associated with bill of materials), thus produce low $/watt the photovoltaic electric power cost.
It should be noted that lower/watt cost adopts with solar battery technology in fact and market penetration is relevant, because global energy requirement positive stabilization increases (not only in emerging nation but also in developed country), traditional fossil fuel cost just progressively raises simultaneously.In addition, there is concern to the extensive increase of all associated problem (for example, environmental pollution, global warming and the national security that links together with dependence to external fuel supply and economic dangerous).These environment, economy and the safety factor relevant with the public awareness that increases just ordered about finding the great interest of cost-effective more and environmentally friendly rechargeable energy solution.In all available regenerative resources, solar energy has the roughly maximum potential that satisfies the demands in efficient and lasting mode.In fact, the cycle of the earth per a few minutes receives the energy of the daylight form that can Duo from the energy of all other resource consumptions roughly than human a year and a day.
Even photovoltaic electric power is considered as desirable rechargeable energy technology widely, cost can be the major obstacle of employing and market penetration but it is associated.Before obtaining the market share and adopting, need to become than conventional power source (comprise well and develop, be used for consumer and the coal-fired electric power of cost-effective roughly) tool Cost Competition based on the electric power of photovoltaic.In addition, the availability of low-cost electric power is regarded as essence in all global economy bodies; The terawatt (TW) (for example, thousands of 1,000,000,000 watts) that therefore can need photovoltaic power system.Market survey shows that the photovoltaic power system install must drop to 3/ watt base cost could be in the situation that deserving to be called the tool Cost Competition without subsidy in the large effectiveness sizable application.Because institute's photovoltaic system cost of installing is current above 6/ watt of $, so still needs the essence cost improvement.
In the past between decades, attempt reaching low $/watt performance be the primary goals of most researchs and exploitation in the photovoltaic technology.Although described industry cost multi-million dollar is pursued various technology (target is to make more cost-effective of photovoltaic energy), existing photovoltaic industry still needs quite large subsidy to come supports sales, and this can be the index of the unfavorable situation of market development and industry development.
Current, the photovoltaic market of silicon solar cell (roughly the same when its maintenance and the initial discovery of the sixties in 20th century and development) domination～93%.The existing photovoltaic industry of trying hard to reduce cost depends on deeply the availability of low-cost waste material level semiconductor silicon and makes conventional solar cell.It should be noted that this kind tailing level silicon (often being called solar energy level silicon) mainly is the defective material from the semiconductor device manufacturer refusal of the first class silicon wafer of the remaining ingot casting head of wafer manufacture and tail and the quality of having relatively high expectations.Although the photovoltaic sales volume increases fast, in the past decade annual growth～40%(wherein 2007 annual productions be estimated as 3.8 ten hundred million watts (GW), sales volume is subject to the shortage of solar energy level silicon and the obstruction of higher price now.Although first class silicon can be used, it is not regarded as option, because it makes manufacturing cost further increase several times.
For the conventional solar cell of typical case, surpass half manufacturing cost and be the original polycrystalline silicon semiconductor for the production of the wafer that is used for solar cell.Therefore, the solar cell of typical 14% efficient is rated for 0.014W/cm
2And before any extra manufacturing, have and be higher than 3/ watt of (or 0.042/cm
2) the silicon wafer cost.Therefore, existing photovoltaic industry must propose and solve and only begin the fact that the silicon materials cost surpasses the benchmark price effectiveness needs of large-scale application.The aspect produces on the area basis to surpass $ 100/cm as a comparison
2The semiconductor maker of the microprocessor chip of selling can bear and the cost that utilizes the first class silicon wafer to be associated.
The shortage of solar energy level silicon and photovoltaic industry can not reach important base cost together with exploitation be used for novelty that space uses more the appearance of high-efficiency three-joint solar cell regenerated recently a large amount of interest to the photovoltaic collector.The obvious advantage of photovoltaic collector is, owing to use large tracts of land not expensive material (glass-mirror reflector or plastic lens) daylight is gathered in the implicit costs benefit that produces on the much smaller expensive solar cell of area, thereby replace expensive material with inexpensive materials.The photovoltaic collector that is designed for 1000 sun optically focused intensity can need expensive semiconductor silicon significantly to reduce～99.9%, and the expensive semiconductor silicon of the current needed same amount of conventional solar cell that this VMJ solar cell that means 1000MW uses 1MW is possible.Pragmatism ground, this is regarded as relaxing the practical methods of arbitrary silicon shortage problem.
Quite a lot of work majority to solar collector focuses on exploitation for high-intensity silicon concentrator solar cell design; Although done a large amount of fruitful developments during 20 century 70 energy crisis, its result was in the cost benefit performance golden mean of the Confucian school and can not be satisfactory at that time.Carried out at first to be used for research and the exploitation take the silion cell of the collector system of the intensity operation of 500 sun optically focused as target; Yet, when in the series resistance problem of attempting overcoming in the solar cell design of studying, run into unsolved exploitation at need described target be reduced to 250 sun optically focused.For instance, the loss of the high series resistance in the concentrator solar cell really once was regarded as conventional VMJ solar battery technology and had proposed and settled subject matter.It should be noted that the quite most of solar cell for the collector technological development manufactures very complex and costliness, it is by 1000 ℃ of 6 or 7 high-temperature step (〉) and 6 or 7 photoetching coverage steps.This complexity is owing to minimizing the An attempt of design that basically the maximum intensity performance constraint of the preferred design in these designs is lost for the series resistance that is not higher than 250 sun optically focused.This kind complexity and the cost that is associated hinder the essence development of collector technology and the solar battery technology that is associated, and promote the development as substitute technologies such as thin film solar cell technologies.
Vertical many knot VMJ solar battery technologies roughly are different from conventional concentrator solar cell.Described VMJ solar battery technology provides at least two advantages with respect to other technology: it does not need photoetching (1), and (2) can adopt greater than the single High temperature diffusion step under 1000 ℃ the temperature and form two knots.Therefore, low manufacturing cost is natural.In addition, can high-intensity operation VMJ solar cell; For example with 2500 sun optically focused operations.From then on plant operation apparent, series resistance is in the VMJ solar cell design and be not a problem; Even when intensity is higher than the order of magnitude of conventional general knowledge, also be not a problem, even if this is infeasible economically.In addition, the current density of the VMJ battery unit under 2500 sun optically focused is usually near 70A/cm
2, this is the radiation levels that can roughly be harmful to the most solar cells based on other technology.
As mentioned above, mainly be because the development that three-joint solar cell is made to V material (comprising gallium (Ga), phosphorus (P), arsenide (As), indium (In) and germanium (Ge)) by III again to the interest of photovoltaic collector.Three junction batteries can use 20 to 30 the series connection different semiconductors of layerings on germanium wafer: grow in metal organic chemical vapor deposition (MOCVD) reactor through doping GaInP
2And the GaAs layer, wherein the semiconductor of each type will have and cause it to absorb most effectively the characteristic band-gap energy of daylight with a certain color.Described semiconductor layer selects to absorb near whole solar spectrum through meticulous, thereby from daylight generating as much as possible.These many knot devices are the most efficient solar cells up to the present, and it is issued to the high record of 40.7% efficient at appropriate solar energy collecting and laboratory condition.But because it manufactures costliness, so it need to be applied in the photovoltaic collector.
Yet, III is increased just fast to demand and the cost thereof of V solar cell material.As an example, in 12 months (12/2006 to 12/2007), the cost of pure gallium is increased to $ 680/kg and the germanium price roughly is increased to $ 1000 to $ 1200/Kg from about $ 350/Kg.The indium that is $ 94/Kg price in 2002 was increased to the 1000/Kg near $ in 2007.In addition, estimate to the demand of indium along with some new companies beginning in 2007 to film CIGS(CuInGaSe) the extensive manufacturing of solar cell and continue to increase.In addition, indium is the rare element that is widely used in the transparent electrical coating of the indium tin oxide form that is formed for liquid crystal display and massive plate monitor.Practically, as if these materials are not to solve main global energy problem to provide terawatt (TW) the low-cost needed feasible long-term photovoltaic of electric power (PV) solution.
Although area is 0.26685cm
2III can produce 2.6 watts power (or about 10W/cm to the V semiconductor solar cell
2), and estimated that this kind technology can finally produce electricity with 8 to 10 minutes/kWh, but roughly be similar to the price from the electricity in conventional source, can need further to analyze to support this kind estimation.Yet the semi-conducting material that VMJ solar cell use cost is minimum shows under the intensity of 2500 sun optically focused above 40W/cm by low cost fabrication
2Power output.(this power output surpasses 400,000W/m
2) except the complicated PV technology based on advanced material, keep roughly ascendancy based on the solar battery technology of Si at photovoltaic element and in using.In addition, if the whole world needs to occur, silicon is the unique semi-conducting material that can supply the existing industry of having of terawatt (TW) photovoltaic electric power basis in the foreknowable future of extensively whole world application.
Summary of the invention
Hereinafter present and simplify summary so that the basic comprehension to aspects more described herein to be provided.This summary is not exhaustive overview, the unvested scope of identifying key/critical element or portraying various aspects described herein yet.Its sole purpose is to present in simplified form the preorder that is described in more detail that some concepts are used as presenting after a while.
Can in arbitrary class photovoltaic cell (for example, the battery that solar cell, hot photovoltaic cell or the lasing light emitter by photon excite), utilize aspect described herein or feature and related advantages, for example reduce the restructuring loss of photoproduction carrier.In addition, also aspect of the present invention can be implemented in other class power conversion battery (for example, beta voltaic cell (betavoltaic cell)).
The present invention loses via the body weight group that the veining on the optical receiving surface of vertically tying the VMJ photovoltaic cells alleviates in the described vertical VMJ of the knot photovoltaic cells more more.Described texture can be the form of chamber connected in star (such as " V " shape cross-sectional configuration, " U " shape cross-sectional configuration etc.), is approximately perpendicular to the direction of the battery unit of stacking formation VMJ photovoltaic cell comprising the plane of this kind cross-sectional configuration.In one aspect, comprise that the plane of roughly repeating cross section (for example, transversal groove extend direction) thereon is approximately perpendicular to the direction of stacking described battery unit.This arranges p+ and the n+ diffusing, doping district that promotes the refract light guiding is left the VMJ photovoltaic cell, produces simultaneously required carrier in the volume that reduces.Correspondingly, incident light can reflect comprising described cross-sectional configuration and be approximately perpendicular in the plane of described direction of stacking described battery unit.
Should be appreciated that, the veining of VMJ photovoltaic cell of the present invention is different with the prior art that is used for conventional Silicon photrouics texture on the directed of PN junction and/or aspect mutual two of incident light.For instance, conventional Silicon photrouics is usually through veining penetrating with prevention light, so that absorb more longer wavelengths realizing better carrier electric current collection closer to PN junction (horizontal location), thereby and alleviate difference spectra response to longer wavelength in the solar spectrum.Therefore that compares is lower, and this does not need in VMJ photovoltaic cell of enhanced spectrum response of longer wavelength in comprising vertical junction and providing solar spectrum of the present invention.
In particular aspects, (for example implement groove of the present invention, the V groove) result comes ameliorate body restructuring loss-(opposite with the conventional solar energy surface of using veining, this reduces reflection, or causes the light through reflection or refraction to become closer to knot) by reducing volume.In particular, described VMJ photovoltaic cell has represented for short wavelength and both better carrier electric current collection of long wavelength, wherein said short wavelength response is owing to the horizontal junction of eliminating top surface place high doped, and described long wavelength response is because the collection efficiency of the enhancing of vertical junction.) as another example, if substitute chamber of the present invention connected in star texture, with other texture (for example, at random, pyramid, vaulted and similar convex configuration) be embodied as the part of VMJ photovoltaic cell, incident light becomes in all directions refraction so, thereby produces light absorption and therefore produce the efficient that reduces in p+ and n+ diffusion region.
According to correlation technique, can form the VMJ photovoltaic cell by stacking a plurality of battery units at first, wherein each battery itself can comprise a plurality of parallel Semiconductor substrate or the layer that is stacked.Every one deck can be made of the impurity doped semiconductor material that forms PN junction, and further comprises and strengthen " inner (built – in) " electrostatic dispersion field that the minority carrier towards this kind PN junction moves.Subsequently, integrated a plurality of this type of battery unit is to form the VMJ photovoltaic cell.Next, on the surface of the reception light of described VMJ photovoltaic cell, can form chamber connected in star (for example, via the scribing saw), be approximately perpendicular to the direction of the described battery unit of the described VMJ photovoltaic cell of stacking formation comprising the plane of described cross-sectional configuration.Correspondingly, incident light can comprise described repetition cross-sectional configuration and be approximately perpendicular to refraction in the plane of described direction of stacking described battery unit (for example, thus for given depth supply higher absorption.) in addition, can implement to have in conjunction with various aspects of the present invention various rear surfaces and the side surface of reflectance coating.
In related fields, groove surfaces of the present invention is further improved the carrier collection, reduces simultaneously the loss of body weight group.For instance, can be perpendicular to described p+nn+(or n+pp+) battery unit locates described V groove, with the optical absorption path that increases longer wavelength in the solar spectrum and so that light absorption can roughly be confined in the N-shaped tagma of p+nn+ battery unit.In addition, this type of V groove can have the antireflecting coating that the incident light through applying to improve in the battery absorbs.
In related fields, the present invention loses via the body weight group that the veining on the optical receiving surface of vertically tying the VMJ photovoltaic cells alleviates in the described vertical VMJ of the knot photovoltaic cells more more.Described texture can be the form of chamber connected in star (such as " V " shape cross-sectional configuration, " U " shape cross-sectional configuration etc.), is approximately perpendicular to the direction of the battery unit of stacking formation VMJ photovoltaic cell comprising the plane of this kind cross-sectional configuration.In one aspect, comprise that the plane of roughly repeating cross section (for example, transversal groove extend direction) thereon is approximately perpendicular to the described direction of stacking described battery unit.This arranges p+ and the n+ diffusing, doping district that promotes the refract light guiding is left the VMJ photovoltaic cell, produces simultaneously required carrier in the volume that reduces.Correspondingly, incident light can reflect comprising described cross-sectional configuration and be approximately perpendicular in the plane of described direction of stacking described battery unit.
Should be appreciated that, the veining of VMJ photovoltaic cell of the present invention is different with the prior art that is used for conventional Silicon photrouics texture on the directed of PN junction and/or aspect mutual two of incident light.For instance, conventional Silicon photrouics is usually through veining penetrating with prevention light, so that absorb more longer wavelengths realizing better carrier electric current collection closer to PN junction (horizontal location), thereby and alleviate difference spectra response to longer wavelength in the solar spectrum.Therefore that compares is lower, and this does not need in VMJ photovoltaic cell of enhanced spectrum response of longer wavelength in comprising vertical junction and providing solar spectrum of the present invention.
In particular aspects, (for example implement groove of the present invention, the V groove) result comes ameliorate body restructuring loss-(opposite with the conventional solar energy surface of using veining, this reduces reflection, or causes the light through reflection or refraction to become closer to knot) by reducing volume.In particular, described VMJ photovoltaic cell has represented for short wavelength and both better carrier electric current collection of long wavelength, wherein said short wavelength response is owing to the horizontal junction of eliminating top surface place high doped, and described long wavelength response is because the collection efficiency of the enhancing of vertical junction.) as another example, if substitute chamber of the present invention connected in star texture, with other texture (for example, at random, pyramid, vaulted and similar convex configuration) be embodied as the part of VMJ photovoltaic cell, incident light becomes in all directions refraction so, thereby produces light absorption and therefore produce the efficient that reduces in p+ and n+ diffusion region.
According to correlation technique, can form the VMJ photovoltaic cell by stacking a plurality of battery units at first, wherein each battery itself can comprise a plurality of parallel Semiconductor substrate or the layer that is stacked.Every one deck can be made of the impurity doped semiconductor material that forms PN junction, and further comprises and strengthen " inside " electrostatic dispersion field that the minority carrier towards this kind PN junction moves.Subsequently, integrated a plurality of this type of battery unit is to form the VMJ photovoltaic cell.Next, on the surface of the reception light of described VMJ photovoltaic cell, can form chamber connected in star (for example, via the scribing saw), be approximately perpendicular to the direction of the described battery unit of the described VMJ photovoltaic cell of stacking formation comprising the plane of described cross-sectional configuration.Correspondingly, incident light can comprise described repetition cross-sectional configuration and be approximately perpendicular to refraction in the plane of described direction of stacking described battery unit (for example, thus for given depth supply higher absorption.) in addition, can implement to have in conjunction with various aspects of the present invention various rear surfaces and the side surface of reflectance coating.
In related fields, groove surfaces of the present invention is further improved the carrier collection, reduces simultaneously the loss of body weight group.For instance, can be perpendicular to described p+nn+(or n+pp+) battery unit locates described V groove, with the optical absorption path that increases longer wavelength in the solar spectrum and so that light absorption can roughly be confined in the N-shaped tagma of p+nn+ battery unit.In addition, this type of V groove can have the antireflecting coating that the incident light through applying to improve in the battery absorbs.
In another aspect, the present invention provides the barrier of ohm contact at one or more buffer strips of terminal layer place's supply of the vertical many knot VMJ photovoltaic cells of high voltage silicon simultaneously so that the described active layer of protection to be provided.The form that this type of buffer strip can be above the terminal layer that is stacked in addition described VMJ photovoltaic cell and/or the non-active layer of below is arranged.Described VMJ photovoltaic cell itself can comprise a plurality of battery units, and wherein each battery unit adopts some active layers (for example, three) to form PN junction and " inside " electrostatic dispersion field (its minority carrier that strengthens towards described PN junction moves).
Therefore; (for example can protect the various active layers at any end place of being positioned at the VMJ photovoltaic cell part of its battery unit (and as); nn+ and/or p+n knot) avoids the stress of harmful form and/or strain (heat/mechanical pressure that for example, can in described VMJ photovoltaic cell, bring out in the making of described VMJ photovoltaic cell and/or operating period, torsion, moment, shearing force etc.).In addition, can the material of low-resistivity ohm contact (metal or semiconductor) form described buffer strip via having roughly, so that it will can not contribute any essence series resistance loss in described photovoltaic cell under operating condition.For instance, can form described buffer strip by the low-resistivity silicon wafer that adopts p-type to mix, so that when making described VMJ photovoltaic cell, (for example use other p-type dopant, aluminium alloy) time, its will alleviate automatic doping risk (with adopt can produce the N-shaped wafer of not expecting the pn knot and compare-when target be when producing roughly the low-resistivity ohm contact).Should be appreciated that, can be the part of arbitrary class photovoltaic cell (for example, solar cell or hot photovoltaic cell) with the invention process.In addition, also aspect of the present invention can be implemented in other class power conversion battery (for example, beta voltaic cell).
In related fields, described buffer strip can be the form at terminal layer lip-deep edge of battery unit, and it serves as the protection border of this kind active layer and further forms the framework of described VMJ photovoltaic cell so that carrying and transportation.Equally, by realizing the firm grip to described VMJ photovoltaic cell, this kind edge formation also is convenient to the operation relevant with the anti-reflective coating (for example, can apply equably coating when keeping securely described battery (for example, by the mechanical grip to it) during operation).In addition, can be between depositional stage physically with described buffer strip (for example, be positioned the non-active layer at the end place of described VMJ photovoltaic cell) orientate contiguous other buffer strip as, thereby and can in the situation that not destruction battery unit easily remove and by mistake be penetrated into arbitrary on the contact surface downwards and do not expect the dielectric coating material.Can form described buffer strip by the silicon of low-resistivity and high doped roughly (for example, approximately 0.008 " thickness).This kind buffer strip can contact the conductive lead wire that VMJ photovoltaic cell another VMJ photovoltaic cell from photovoltaic battery array is cut apart or separated subsequently.
According to more on the one hand, described buffer strip can be sandwiched between the active layer of electric contact and described VMJ photovoltaic cell.In addition, this type of buffer strip can have approximate match in the thermal expansion character of the thermal expansion character of described active layer, thereby alleviates performance lower one's standard or status (for example, during fabrication alleviating of the stress/strain that causes of welding or soft soldering when lead-in wire).For instance, can adopt the thermal coefficient of expansion (3x10 that is matched with all effect battery units
– 6/ ℃) the low-resistivity silicon layer of high doped.Correspondingly, can provide roughly strong ohm contact to described effect battery unit, it alleviates in addition by welding/soft soldering and is caused and/or from the stress problem of the not matched coefficients of thermal expansion in the slider material.Other example comprises the introducing metal level, for example tungsten (4.5x10
– 6/ ℃) or molybdenum (5.3x10
– 6/ ℃), it is because roughly being similar to activated silica (3x10
– 6/ ℃) thermal coefficient of expansion of p+nn+ battery unit and being selected.Can be in the situation that do not introduce the metallization that harmful stress welding or soft soldering are applied to low-resistivity silicon layer outer of described buffer strip or are applied to the metal level of the electrode that is fused to described effect battery unit to high intensity solar cell or photovoltaic cell, wherein this type of is outer as ohm contact; Rather than the battery unit section of connecting with other battery unit.
Various aspects of the present invention can be embodied as a part that has for the wafer of the Miller indices (111) of the orientation of the crystal face that is associated of described buffer strip, it is regarded as mechanically stronger and etching is slower than (100) the crystal orientation silicon that is generally used for making effect VMJ battery unit.Correspondingly, the low-resistivity silicon layer can have the crystal orientation different from the crystal orientation of described effect battery unit, wherein by adopting this kind alternative orientations, provides the device of the mechanical strength/terminal contacts with improvement.In other words, compare with the terminal layer that non-effect (111) is directed, (100) the common etching in edge of directed battery unit comparatively fast and in fact finishing have the angle of the effect battery unit of this kind crystal orientation, have for welding or the other more stabilizing arrangement structure of the more high mechanical properties of link contact thereby produce.
In related fields, the present invention adopts much more vertical knot VMJ photovoltaic cells, with via the incident light of the electrolysis that is used for compound (for example, water) and the electrolysis (for example, the generation of hydrogen and oxygen) that electric current produces to provide described compound.This kind VMJ comprises a plurality of battery units that contact with electrolyte, and wherein each battery unit adopts some active layers (for example, three) to form PN junction and " inside " electrostatic dispersion field (its minority carrier that strengthens towards described PN junction moves).Described VMJ partially or even wholly can be immersed in water/electrolyte, as the part of transparent utensil (for example, glass or plastics), wherein when light runs into this kind VMJ, can in described whole VMJ, form a plurality of electrolysis electrodes (anode/cathode).When reaching the threshold voltage of electrolysis, the current flowing that flows between this type of electrolysis electrode passes water and breaks water into hydrogen and oxygen.Usually, this kind decomposition threshold voltage is positioned at 1.18 volts to 1.6 volts scope with division water and produces hydrogen and oxygen.Should be appreciated that, can reach more high voltage by stacking a plurality of battery units (a plurality of batteries that for example, are connected in series).In addition, can further adopt catalyst additive to increase hydrogen and oxygen evolution efficient, and reduce the semiconductor corrosion that is caused by high electrode current potential and electrolyte solution.In addition, described electrolyte can form (material based on iridium of for example, being made by iridium, its bianry alloy or its oxide) by arbitrary solution that can detrimentally not affect the stack layer that forms described VMJ photovoltaic cell.
In related fields, described VMJ is partially or even wholly immersed in water/electrolyte, and outstanding protruding metal zone (for example, VMJ electrode) with increase and water and electrolytical contact area and the generation of enhancing hydrogen, the silicon top that can be included in described VMJ photovoltaic cell.For instance, this type of protrusion can be some millimeters.According to more on the one hand, can during making, the VMJ photovoltaic cell incite somebody to action roughly thin electrode catalyst agent material (for example, platinum, RuO
2Or titanium) layer is incorporated in the described metallization to strengthen the formation of hydrogen.In addition, select the electrode catalyst agent material to have sizable flexibility, because described metallized n+ negativity (–) side can be different from p+ positivity (+) side for the electrode catalyst agent material.Should be appreciated that, the those skilled in the art can easily select to strengthen hydrogen generation and stable and compatible with the making of VMJ photovoltaic cell catalyst material.In addition, can adopt ultrasound unit to discharge to keep attaching to the oxygen that produces or hydrogen bubble on the electrolysis electrode.Should be appreciated that electrolytical also removable this type of the formed bubble that flows.
According to correlation technique, electrolyte solution is incorporated in the container that contains the VMJ photovoltaic cell, in described container with described VMJ fully or roughly submergence.Then make this kind system stand incident light and current flowing produces from described VMJ.Incident light on the described VMJ can be in whole electrolyte solution generation current, and wherein meet or exceed arbitrary position be used to the threshold value that makes water decomposition (for example, about 1.6 volts), the electrolysis of water occurs.For instance, cross over the voltage (for example, for 1000 sun optically focused) that each battery unit can produce 0.6 volt and between the first battery unit district and the 3rd battery unit district, electrolysis can occur.Correspondingly, can surpass between the district of decomposition of the threshold value (for example, about 1.6 volts) that is used for water electrolysis and expection water be positioned voltage in order to the various collecting mechanisms (for example, barrier film, sieve plate etc.) of collecting the oxygen produce and hydrogen.Should be appreciated that, also this type of collecting mechanism can be positioned in the electrolytical downstream flow to collect oxygen and the hydrogen that is produced.
Address relevant purpose on realizing, this paper describes some illustrative aspect in conjunction with following explanation and accompanying drawing.These aspects represent the variety of way that can put into practice, and described aspect is set is covered by herein for all.Other advantage and novel feature can become apparent when describing in detail below in conjunction with graphic consideration.
Description of drawings
Fig. 1 graphic extension according to an aspect of the present invention as the veining of a part of vertically tying the VMJ batteries or the perspective schematic view of groove surfaces more.
Fig. 2 graphic extension is used for implementing the exemplary cross section of groove of the present invention.
Fig. 3 graphic extension has battery unit exemplary stacking of the VMJ photovoltaic cell of groove surfaces according to an aspect of the present invention in order to formation.
Fig. 4 graphic extension partly forms the particular battery unit of VMJ photovoltaic cell according to an aspect of the present invention.
Fig. 5 graphic extension produces VMJ with groove surfaces according to an aspect of the present invention with the correlation technique of ameliorate body restructuring loss.
Fig. 6 graphic extension is the schematic block diagram of the layout of the buffer strip of the part of the vertical many knot VMJ batteries of conduct according to an aspect of the present invention.
Fig. 7 graphic extension according to a particular aspect of the invention its array can form the particular aspects of the battery unit of VMJ photovoltaic cell.
Fig. 8 graphic extension is the exemplary cross section of buffer strip of lip-deep edge formation form of the battery unit at the arbitrary end place that is positioned at the VMJ photovoltaic cell.
The terminal layer place that Fig. 9 is illustrated in the vertical VMJ of the knot photovoltaic cells of high voltage silicon more adopts buffer strip so that the correlation technique of the barrier of protecting its active layer to be provided.
Figure 10 graphic extension comprises the schematic cross section of solar energy sub-assembly of modular arrangement of photovoltaic (PV) battery of the VMJ photovoltaic cell that can implement to have buffer strip.
The schematic block diagram of the electrolysis system of vertical many knot VMJ batteries is adopted in Figure 11 graphic extension according to an aspect of the present invention for water electrolysis.
Figure 12 graphic extension is from the outstanding metal level protrusion that can promote electrolysis process in the surface of described VMJ photovoltaic cell.
Figure 13 graphic extension is crossed over described VMJ and as the voltage gradient in the whole stack of cells of its part.
Figure 14 graphic extension is according to an aspect of the present invention via the method for the water electrolysis of VMJ photovoltaic cell.
Figure 15 graphic extension can be used for the VMJ photovoltaic cell of electrolysis of the present invention.
Figure 16 graphic extension single battery unit, a plurality of described single batteries unit is formed for the VMJ of electrolysis of the present invention.
Figure 17 graphic extension has groove surfaces with the VMJ photovoltaic cell of the efficient of improving electrolysis process.
Figure 18 graphic extension is used for the exemplary groove on surface of the VMJ photovoltaic cell of electrolysis according to an aspect of the present invention.
Embodiment
Describe the present invention referring now to graphic, wherein refer to identical element in the identical Ref. No. of all graphic middle usefulness.For illustrative purposes, in the following description, a large amount of details have been enumerated in order to provide thorough understanding of the present invention.Yet, can be apparent, can be in the situation that there be these details to put into practice the present invention.In other example, show well-known structure and device with the block diagram form, to promote to describe the present invention.
This explanation, appended claims or graphic in, the term "or" is set to mean comprising property "or" and the nonexcludability "or".That is to say, " X adopts A or B " set any one that means in the arrangement of described naturally comprising property obviously found out unless otherwise prescribed or from the context.That is to say, if X adopts A, X adopts B, or X adopt A and B both, so in the situation that any one all satisfies " X employing A or B " in the above-mentioned example.In addition, used article in this specification and the accompanying drawing " (a) " reaches " one (an) " should be interpreted as meaning " one or more " usually, obviously refers to unless otherwise prescribed or based on context singulative.
In addition, the nomenclature with respect to as the impurity dopant material of the part of photovoltaic cell described herein for the doping donor impurity, is used interchangeably term " N-shaped " and reaches " N-type ", and it is also like this that term " n+ type " reaches " N+ type ".For the doping acceptor impurity, term " p-type " reaches " P type " and also is used interchangeably, and term " p+ type " to reach " P+ type " also like this.For the purpose of clear, doping type also occurs with abbreviated form, and for example, N-shaped is marked as N, and the p+ type is indicated as P+ etc.Multilayer photovoltaic element or battery unit are marked as one group of letter, wherein the doping type of the described layer of each indication; For instance, p-type/the N-shaped knot is marked as PN, and p+ type/N-shaped/n+ type knot is indicated by P+NN+; The mark of other knot combination is also observed this note.
Fig. 1 graphic extension is the perspective schematic view on groove 100 surfaces of the part of the vertical many knot VMJ photovoltaic cells 120 of conduct according to an aspect of the present invention.This veining 100 is arranged so that refract light can be directed leaving p+ and n+ diffusing, doping district, produces simultaneously required carrier.Correspondingly, incident light can reflect in the plane 110 with normal vector n.This kind plane 110 is parallel to the PN junction plane of VMJ photovoltaic cell 120, and can comprise the cross-sectional configuration of groove 100.In addition, antireflecting coating can be applied to the surface of veining 100 to increase the incident light absorption in the described battery.In other words, the orientation on plane 110 is approximately perpendicular to stacked battery cells 111,113,115 direction.Should be appreciated that, also can contain other non-perpendicular orientation (crystal face that for example, exposes with various angles) and all these type of aspects and be regarded as belonging in the scope of the present invention.
Fig. 2 graphic extension is used for the exemplary texture with the surface groove of described VMJ photovoltaic cell, and described VMJ photovoltaic cell receives light on described surface.This kind grooveization can be the form of chamber connected in star, for instance, as (for example have various angles, 0 °＜＜180 °) " V " shape cross-sectional configuration, " U " shape cross-sectional configuration etc., be approximately perpendicular to comprising the plane of described cross-sectional configuration the described VMJ photovoltaic cell of stacking formation battery unit direction and/or be roughly parallel to the PN junction of described VMJ photovoltaic cell.Should be appreciated that, the veining 210,220 of VMJ photovoltaic cell of the present invention, 230 the directed of PN junction and/or from incident light mutual on different with the prior art that is used for conventional Silicon photrouics texture.For instance, conventional Silicon photrouics is usually through veining penetrating with prevention light, so that absorb more longer wavelengths realizing better carrier electric current collection closer to PN junction (horizontal location), thereby and alleviate difference spectra response to longer wavelength in the solar spectrum.That compares is lower, and this does not need in VMJ photovoltaic cell of enhanced spectrum response of longer wavelength in comprising vertical junction and providing solar spectrum of the present invention.
But, be used for (for example implementing groove of the present invention, the V groove) a aspect is to come ameliorate body restructuring loss-(opposite with the conventional solar energy surface of using veining, this reduces reflection, or causes the light through reflection or refraction to become closer to knot) by reducing volume.In particular, the VMJ photovoltaic cell has represented for short wavelength and both better carrier electric current collection of long wavelength, and wherein said short wavelength response is because the horizontal junction of elimination top surface place high doped and described long wavelength response are because the collection efficiency of the enhancing of vertical junction.) as another example, if substitute chamber of the present invention connected in star texture, with other texture (for example, at random, pyramid, vaulted and similar convex configuration) be embodied as the part of VMJ photovoltaic cell, incident light becomes in all directions refraction so, thereby produces light absorption and therefore produce the efficient that reduces in p+ and n+ diffusion region.Should be appreciated that, this type of " U " reaches " V " connected in star and also belonging in the scope of the present invention for exemplary and other configuration in nature.
Fig. 3 graphic extension can be implemented the battery unit 311,313 of groove texture, 317 layout in side 345 according to an aspect of the present invention.As explained before, the battery units 311,313 that VMJ photovoltaic cell 315 is engaged by a plurality of integral body itself, 317(1 are to k, and k is integer) form, wherein each battery unit itself is formed by stacking substrate or a layer (not shown).For instance, each battery unit 311 can comprise a plurality of parallel Semiconductor substrate that is stacked, and be made of the semi-conducting material that impurity mixes, the semi-conducting material that described impurity mixes forms PN junction and strengthens " inside " electrostatic dispersion field that the minority carrier towards this kind PN junction moves.Should be appreciated that, a part and this type of layout that various N+ types and P type doped layer formation can be embodied as described battery unit also belong in the scope of the present invention.
Correspondingly, the texture on the optical receiving surface 345 promotes that refract light is directed leaving p+ and n+ diffusing, doping district, produces simultaneously required carrier.Therefore, incident light can reflect comprising cross-sectional configuration and be approximately perpendicular in the plane of described direction (for example, perpendicular to vector n) of stacking described battery unit.
The particular aspects of Fig. 4 graphic extension battery unit, its array can form the VMJ photovoltaic cell with veining groove of the present invention.Battery unit 400 is included in the layer 411,413,415 that is stacked in the layout of almost parallel.This type of layer 411,413,415 can further comprise the semi-conducting material that impurity mixes, and its middle level 413 is opposite conductivity type-to define PN junction at intersection point 412 places for a kind of conductivity type and layer 411.Equally, layer 415 can be the conductivity type identical with layer 413-in addition by roughly higher impurity concentration, strengthens the electrostatic dispersion field, inside that the minority carrier towards PN junction 412 moves thereby produce.This type of battery unit integral body can be bonded together to form the VMJ photovoltaic cell and according to the surface of various aspects of the present invention groove.
According to more on the one hand, for making described VMJ photovoltaic cell by a plurality of batteries 400, at first can be with identical PNN+(or NPP+) knot forms in the flat wafer of high resistivity (for example, being higher than 100ohm-cm) (having approximately 0.008 inch thickness) of N-type (or P type) silicon the approximately degree of depth of 3 to 10 μ m.Subsequently,, wherein flake aluminum is inserted between it, wherein the PNN+ of each wafer knot and crystal orientation can the equidirectional orientations with this type of PNN+ wafer stacking together.In addition, can adopt aluminium-silicon congruent melting alloy, or have approximate match in the metal of the hot coefficient of silicon, for example molybdenum or tungsten.Next, described silicon wafer and aluminium interface can be fused together, so that stacking sub-assembly can be bonded together.Also can be stacked in addition the form supply that the non-active layer of the terminal layer top of described VMJ photovoltaic cell and/or below arranges and have the roughly buffer strip of low-resistivity; thereby implement the described active layer of protection is avoided the stress of harmful form and/or strain (heat/mechanical pressure that for example, can bring out in the making of VMJ photovoltaic cell and/or operating period, torsion, moment, shearing force etc.) in described VMJ photovoltaic cell barrier.Then the surface groove of this kind battery can be lost with the ameliorate body restructuring, described in detail such as preamble.Should be appreciated that, also can adopt other material, for example germanium and titanium.Equally, also can adopt aluminium-silicon congruent melting alloy.
Fig. 5 graphic extension is with the correlation technique 500 of the surface groove of the reception light of VMJ photovoltaic cell.Although this paper is with described exemplary methods graphic extension and be described as the piece of a series of representative variety of events and/or action, the present invention is not limited by the illustrated order of this type of piece.For instance, according to the present invention, except the illustrated order of this paper, some actions or event can different order and/or are occured simultaneously with other action or event.In addition, implement the method according to this invention and may not need all illustrated pieces, event or action.In addition, should be appreciated that, can method illustrated with this paper and that describe be combined enforcement according to exemplary methods of the present invention and other method, and also can the system of graphic extension or description and equipment are not combined enforcement with other.
At first, and at 510 places, formation described in detail has a plurality of battery units of PN junction such as preamble.As explained before, each battery unit itself can comprise a plurality of parallel Semiconductor substrate that is stacked.Every one deck can be made of the impurity doped semiconductor material that forms PN junction, and further comprises and strengthen " inside " electrostatic dispersion field that the minority carrier towards this kind PN junction moves.Subsequently, and at 520 places, integrated a plurality of these type of battery units wherein also can be embodied as buffer strip the protection (stress/strain that for example, brings out) to this type of battery thereon to form the VMJ photovoltaic cell during making.Next and at 530 places, on the surface of the reception light of described VMJ photovoltaic cell, can form chamber connected in star (for example, via the scribing saw), be approximately perpendicular to the direction of the described battery unit of the described VMJ photovoltaic cell of stacking formation comprising the plane of cross-sectional configuration.Subsequently and at 540 places, can reflect incident light comprising described cross-sectional configuration (and/or being parallel to described PN junction) and be approximately perpendicular in the plane of direction of stacking described battery unit.
Fig. 6 graphic extension is the schematic block diagram of the layout of the buffer strip of the part of the vertical many knot VMJ photovoltaic cells of conduct according to an aspect of the present invention.The battery units 611 that VMJ photovoltaic cell 615 is engaged by a plurality of integral body itself, 617(1 are to n, and n is integer) form, wherein each battery unit itself is formed by stacking substrate or a layer (not shown).For instance, each battery unit 611,617 can comprise a plurality of parallel Semiconductor substrate that is stacked, and be made of the semi-conducting material that impurity mixes, the semi-conducting material that described impurity mixes forms PN junction and strengthens " inside " electrostatic dispersion field that the minority carrier towards this kind PN junction moves.Correspondingly; (for example can protect the various active layers at any end place of being positioned VMJ photovoltaic cell 615 part of its battery unit (and as); nn+ and/or p+n knot; or pp+ and/or pn+ knot) avoids the stress of harmful form and/or strain (heat/mechanical pressure that for example, can in described VMJ photovoltaic cell, bring out in the making of VMJ photovoltaic cell and/or operating period, torsion, moment, shearing force etc.).
In addition, can form in the buffer strip 610,612 each via the material that has roughly the ohm contact of low-resistivity (for example, having less than about arbitrary scope of the upper limit of 0.5ohm-cm), alleviate simultaneously and/or eliminate the automatic doping of not expecting.For instance, can (for example use other p-type dopant by the low resistivity wafers that adopts p-type to mix, aluminium alloy) form buffer strip 610,612, with the risk that alleviates automatic doping (with adopt can produce the N-shaped wafer of not expecting the pn knot and compare-when expectation produces roughly the low-resistivity ohm contact).
The particular aspects of Fig. 7 graphic extension battery unit, its array can form the VMJ photovoltaic cell.Battery unit 700 is included in the layer 711,713,715 that is stacked in the layout of almost parallel.This type of layer 711,713,715 can further comprise the semi-conducting material that impurity mixes, and its middle level 713 is opposite conductivity type-to define PN junction at intersection point 712 places for a kind of conductivity type and layer 711.Equally, layer 715 can be the conductivity type identical with layer 713-in addition by roughly higher impurity concentration, strengthens the electrostatic dispersion field, inside that the minority carrier towards PN junction 712 moves thereby produce.This type of battery unit integral body can be bonded together to form the VMJ photovoltaic cell, wherein can locate buffer strip of the present invention with protect described VMJ photovoltaic cell and form its associated battery cells and/or the layer.
According to more on the one hand, for making described VMJ photovoltaic cell by a plurality of batteries 700, at first can be with identical PNN+(or NPP+) knot forms in the flat wafer of high resistivity (for example, being higher than 100ohm-cm) (having approximately 0.008 inch thickness) of N-type (or P type) silicon the approximately degree of depth of 3 to 10 μ m.Subsequently, with this type of PNN+ wafer stacking together, wherein thin aluminium lamination inserts between each wafer, and wherein the PNN+ of each wafer knot and crystal orientation can the equidirectional orientations.In addition, can adopt aluminium-silicon congruent melting alloy, or have approximate match in the metal of the hot coefficient of silicon, for example molybdenum or tungsten.Next, described silicon wafer and aluminium interface can be fused together, so that stacking sub-assembly can be bonded together.In addition, also can adopt aluminium-silicon congruent melting alloy.Should be appreciated that, a part and this type of layout that various N+ types and P type doped layer can be embodied as described battery unit also belong in the scope of the present invention.
Also can be stacked in addition the form supply that the non-active layer of the terminal layer top of described VMJ photovoltaic cell and/or below arranges and have the roughly buffer strip of low-resistivity; thereby implement the described active layer of protection is avoided the stress of harmful form and/or strain (heat/mechanical pressure that for example, can bring out in the making of VMJ photovoltaic cell and/or operating period, torsion, moment, shearing force etc.) in described VMJ photovoltaic cell barrier.
Fig. 8 graphic extension is battery unit 830(840) terminal layer 831(841) lip-deep edge formation 810(812) the exemplary cross section of buffer strip of form, its part forms VMJ photovoltaic cell 800.This type of edge formation 810,812 is served as the protection border of the active layer of described battery unit; and further partly form the framework of VMJ photovoltaic cell 800 so that carrying and transportation (for example, the low-resistivity buffer strip of described VMJ photovoltaic cell and edge or terminal contacts).Equally, by realizing the firm grip to VMJ photovoltaic cell 800, described edge formation also is convenient to the operation relevant with the anti-reflective coating (for example, can apply equably coating when keeping securely described battery (for example, by the mechanical grip to it) during operation).In addition, can during depositing operation, physically this type of edge formation be orientated as contiguous other limit formation, wherein can be in the situation that do not destroy battery unit 830,840 and easily remove and by mistake be penetrated into arbitrary on the contact surface downwards and do not expect the dielectric coating material.Represent the edge formation 810(812 of buffer strip) can be by the silicon of roughly low-resistivity and high doped (for example, approximately 0.008 " thickness) form, wherein said edge formation can contact the conductive lead wire that VMJ photovoltaic cell another VMJ photovoltaic cell from photovoltaic battery array is cut apart subsequently.In addition, because the roughly low-resistivity of described buffer strip, do not require that described conductive lead wire has and the electrically contacting fully of described buffer strip.Therefore, it can be the part contact, and for example contact or series of points contact provides again good electrically contacting simultaneously.Should be appreciated that, Fig. 8 is exemplary in nature, and other version (for example, the buffer strip 810 on the surface of the arrival 800 that forms during fabrication wherein 810 joins active layer 841 to) also belongs in the scope of the present invention.For instance, 810 shape can represent with the part lead-in wire of metal layer on the buffer strip as previously described and contact.
Described conductive lead wire can be the form of electrode layer, its by form at substrate deposition the first electric conducting material-and can comprise tungsten, silver, copper, titanium, chromium, cobalt, tantalum, germanium, gold, aluminium, magnesium, manganese, indium, iron, nickel, palladium, platinum, zinc, its alloy, indium tin oxide, other conduction and semiconductive metal oxide, nitride and silicon dioxide, polysilicon, through doped amorphous silicon and various metal composites alloy.In addition, electrode can adopt other through conduction or semiconductive polymer, oligomer or the monolithic of doping or undoped, such as PEDOT/PSS, polyaniline, polythiophene, polypyrrole, its derivative etc.In addition, because some metals can have the oxide skin(coating) that can detrimentally affect the performance of VMJ photovoltaic cell formed thereon, so nonmetallic materials (for example, amorphous carbon) also can be used for electrode formation.Should be appreciated that, the edge formation of Fig. 8 is also belonging in the scope of the present invention for other buffer strip configuration (for example, rectangle, circle, cross section) exemplary and that have with the Surface Contact scope of described active layer in nature.
In addition, various aspects of the present invention can be embodied as a part that has for the wafer of the Miller indices (111) of the orientation of the crystal face that is associated of described buffer strip, it is regarded as mechanically stronger and etching is slower than (100) the crystal orientation silicon that is generally used for making effect VMJ battery unit.Correspondingly, the low-resistivity silicon layer can have the crystal orientation different from the crystal orientation of described effect battery unit, wherein by adopting this kind alternative orientations, provides the device of the mechanical strength/terminal contacts with improvement.In other words, compare with the terminal layer that non-effect (111) is directed, (100) the edge etching of directed battery unit comparatively fast and in fact finishing have the angle of the effect battery unit of this kind crystal orientation, have for welding or the other more stabilizing arrangement structure of the more high mechanical properties of link contact thereby produce.
The terminal layer place that Fig. 9 is illustrated in the vertical VMJ of the knot photovoltaic cells of high voltage silicon more adopts buffer strip so that the correlation technique 900 of the barrier of protecting its active layer to be provided.Although this paper is with described exemplary methods graphic extension and be described as the piece of a series of representative variety of events and/or action, the present invention is not limited by the illustrated order of this type of piece.For instance, according to the present invention, except the illustrated order of this paper, some actions or event can different order and/or are occured simultaneously with other action or event.In addition, implement the method according to this invention and may not need all illustrated pieces, event or action.In addition, should be appreciated that, can method illustrated with this paper and that describe be combined enforcement according to exemplary methods of the present invention and other method, and also can the system of graphic extension or description and equipment are not combined enforcement with other.At first, and at 910 places, formation described in detail has a plurality of battery units of PN junction such as preamble.As explained before, each battery unit itself can comprise a plurality of parallel Semiconductor substrate that is stacked.Every one deck can be made of the impurity doped semiconductor material that forms PN junction, and further comprises and strengthen " inside " electrostatic dispersion field that the minority carrier towards this kind PN junction moves.Subsequently and at 920 places, integrated a plurality of these type of battery units are to form the VMJ photovoltaic cell.Next and at 930 places, can implement to contact the buffer strip of the terminal layer of described VMJ photovoltaic cell, so that the barrier of its active layer of protection to be provided.The form that this type of buffer strip can be above the terminal layer that is stacked in addition described VMJ photovoltaic cell and/or the non-active layer of below is arranged.Then can described VMJ photovoltaic cell be embodied as at 940 places the part of photovoltaic cell.
Figure 10 graphic extension comprises photovoltaic (PV) battery 1023,1025,1027(1 to k, and wherein k is integer) the schematic cross section 1000 of solar energy sub-assembly of modular arrangement 1020.Each PV battery can adopt a plurality of VMJ photovoltaic cells of the buffer strip that has according to an aspect of the present invention.Usually, each in the PV battery (being also referred to as photovoltaic cell) 1023,1025,1027 can be converted to electric energy with light (for example, daylight).The modular arrangement 1020 of described PV battery can comprise Standardisation Cell or the section that promotes structure and flexible arrangement is provided.
One exemplary aspect in, in the photovoltaic cell 1023,1025,1027 each can be the DSSC (DSC) that comprises a plurality of glass substrate (not shown)s, wherein deposited thereon is transparent conducting coating, for example fluorine doped tin oxide layer (for instance).This kind DSC can further comprise semiconductor layer, for example TiO
2Particle, sensitizing dyestuff layer, electrolyte and catalyst layer, for example Pt-(does not show)-it can be sandwiched between the described glass substrate.For instance, can be on the coating of described glass substrate further depositing semiconductor layers, and can with described dye coating as monolayer adsorption on described semiconductor layer.Therefore, can form electrode and opposite electrode by redox flows with the electronics of controlling between it.
Correspondingly, the circulation of battery 1023,1025,1027 experience excitation, oxidation and reduction, this produces flowing of electronics, for example electric energy.For instance, the dye molecule in the incident light 1005 excitation dye coatings, wherein the dye molecule of light stimulus is subsequently in the conduction band with the described semiconductor layer of electronic injection.This can cause the oxidation of described dye molecule, and wherein institute's injected electrons can flow through described semiconductor layer to form electric current.After this, described electronics is original electrolyte also at the catalyst layer place, and will be reversed to neutral state through the dye molecule of oxidation.Can repeat continuously the circulation of this kind excitation, oxidation and reduction so that electric energy to be provided.
The schematic block diagram of the electrolysis system of vertical many knot VMJ photovoltaic cells 1110 is adopted in Figure 11 graphic extension according to an aspect of the present invention for electrolysis.Can partially or even wholly VMJ photovoltaic cell 1110 be immersed in water/electrolyte, as the part of transparent utensil (for example, quartz, glass or plastics) 1130.When incident light 1135 runs into the surface 1137 of this kind VMJ photovoltaic cell 1110, can be in described whole VMJ photovoltaic cell and/or surface thereon 1137 form a plurality of electrolysis electrodes that are anode and/or negative electrode form.When reaching the threshold voltage of electrolysis, then the electric current that flows between this type of electrolysis electrode that is formed on the surface 1137 flows and passes water and break water into hydrogen and oxygen.VMJ photovoltaic cell 1110 comprises a plurality of whole battery units 1111 that engage, 1117(1 to n, and wherein n is integer), wherein each battery unit itself is formed by stacking substrate or layer (not shown).For instance, each battery unit 1111,1117 can comprise a plurality of parallel Semiconductor substrate that is stacked, and be made of the semi-conducting material that impurity mixes, the semi-conducting material that described impurity mixes forms PN junction and strengthens " inside " electrostatic dispersion field that the minority carrier towards this kind PN junction moves.When incident light 1135 is directed into surperficial 1137, in each district of VMJ photovoltaic cell 1110, then can form a plurality of negative electrodes and anode, it is subsequently with the electrode that acts on electrolysis procedure.
When reaching the threshold voltage of electrolysis, the current flowing that flows between this type of electrolysis electrode passes described electrolyte and breaks water into hydrogen and oxygen.Usually, this kind decomposition threshold voltage is positioned at 1.18 volts to 1.6 volts scope with division water and produces hydrogen and oxygen.Should be appreciated that, can reach more high voltage by stacking a plurality of battery units (a plurality of batteries that for example, are connected in series).In addition, can further adopt catalyst material to increase the semiconductor corrosion that hydrogen and oxygen evolution efficient and reduction are caused by high electrode current potential and electrolyte solution.In addition, described electrolyte can form (catalyst based on iridium of for example, being made by iridium, its bianry alloy or its oxide) by arbitrary solution that can detrimentally not affect the stack layer that forms described VMJ photovoltaic cell.In related fields, ultrasonic transducer (transducer) operationally steeps to discharge the oxygen or the hydrogen that keep attaching on the described electrolysis electrode alternately with described electrolysis system.
Can further VMJ photovoltaic cell 1110 be positioned on the heat regulation sub-assembly 1119, heat regulation sub-assembly 1119 removes the heat that produces from the hot spot region and is maintained in the predetermine level with the temperature gradient with described VMJ photovoltaic cell.This kind heat regulation sub-assembly 1119 can be the form that fin is arranged, it comprises a plurality of fin of the dorsal part that is surface mounted to described VMJ photovoltaic cell, and wherein each fin can further comprise a plurality of fin (not shown)s that are approximately perpendicular to described dorsal part extension.The surface area that described fin can enlarge fin is to increase the contact with coolant (for example, electrolyte, such as cooling fluids such as water), and described coolant can be further used for from described fin and/or photovoltaic cell heat dissipation.Therefore, can conduct from the heat of described VMJ photovoltaic cell and make it enter electrolyte on every side by described fin, and/or not affect the material of electrolysis procedure.In addition, can be via the heat conduction path that arrives described fin (for example, metal level) conduction is conducted with the direct physical or the heat that alleviate described fin and described VMJ photovoltaic cell from the heat of described VMJ photovoltaic cell, and is provided for the scalable solution of the appropriate operation of described electrolysis.
In related fields, described fin can be positioned in various planes or the three dimensional arrangement in order to monitor, regulate and manage all sidedly the heat flow of leaving described VMJ photovoltaic cell.In addition, each fin can further adopt heat/electric structure (not shown), and described structure can have spiral, reverses, spirals, labyrinth shape or the comparatively dense pattern that has line in a part distribute and have other planform that the relatively not intensive pattern of line distributes in other parts.For instance, this class formation part can be formed and another part can be by provide the material of high thermoconductivity to form at other direction by the material that relatively high isotropic conductivity is provided.Correspondingly, each heat of heat regulation sub-assembly/electric structure provides heat conduction path, described heat conduction path can dissipate from the heat of focus and make it enter each heat conducting shell of calorie adjusting device or the fin that is associated, thereby and promotes described electrolysis procedure.Should be appreciated that, can cool off described fin via the independent coolant that separates with described electrolyte medium.
Figure 12 graphic extension protrusion 1211 of the metal level that is associated with the electrode of single battery unit 1201, again one side of 1215 of comprising of the present invention.This type of protrusion 1211,1215 is given prominence to (for example, some millimeters) to promote described electrolysis process via increasing contact surface area from the surface 1241 of VMJ photovoltaic cell 1200.In addition, can be with roughly thin electrode catalyst agent material (for example, platinum, RuO during the VMJ photovoltaic cell is made
2Or titanium) layer is incorporated in the described metallization and produces to strengthen hydrogen.In addition, select the electrode catalyst agent material to have sizable flexibility, because described metallized n negativity (–) side 1211 can be different from p+ positivity (+) side 1215 for the electrode catalyst agent material.Should be appreciated that, the those skilled in the art can easily select to strengthen hydrogen generation and stable and compatible with the making of VMJ photovoltaic cell catalyst material.When incident light 1235 arrives the surface 1241 of described VMJ photovoltaic cell, can form a plurality of cathode/anode thereon.For instance, in the some districts on described VMJ photovoltaic cell (at electronegative negative electrode place), reduction reaction occurs, and wherein gives the electronics (e of hydrogen cation from described negative electrode
-) to form hydrogen (by the half-reaction of acid balance):
Negative electrode (reduction): 2H
+(aq)+2e
-→ H
2(g)
Give the electronics (e of hydrogen cation from described negative electrode
-) to form hydrogen (by the half-reaction of acid balance).
At the anode place of positively charged, oxidation reaction occurs, thus produce oxygen and to described cathode electronics to finish described circuit:
Anode (oxidation): 2H
2O (l) → O
2(g)+4H
+(aq)+4e
-
Also can come the same half-reaction of equilibrium phase by following alkali.In general, not all half-reaction should come balance by acid or alkali.In general, for increasing half-reaction, both should come balance by acid or alkali usually for it.
Negative electrode (reduction): 2H
2O (l)+2e
-→ H
2(g)+2OH
-(aq)
Anode (oxidation): 4OH
-(aq) → O
2(g)+2H
2O (l)+4e
-
Make up arbitrary half-reaction to producing water to identical total decomposition of oxygen and hydrogen:
Overall reaction: 2H
2O (l) → 2H
2(g)+O
2(g)
The number of the hydrogen molecule that produces as indicated above, therefore is the twice of the number of oxygen molecule.Temperature and the pressure of supposing two kinds of gases are equal, and therefore the hydrogen that produces have the two volumes of the oxygen that produces.The number that passes the electronics of water through promotion be the hydrogen molecule that produces number twice and be four times of number of the oxygen molecule that produces.As explained before, if add water-soluble electrolyte, the conductivity of water significantly raises so.Correspondingly, described electrolyte is separated into cation and anion; Wherein said anion rushes at anode and neutralizes the wherein H of the positively charged of accumulation
+Similarly, described cation rushes at negative electrode and neutralizes the wherein electronegative OH of accumulation
-This allows the continuous flow of electricity.Should be appreciated that, should consider electrolytical selection in conjunction with the material that is used for the VMJ photovoltaic cell, in order to can detrimentally not affect its material and operation.Select electrolytical extra factor about abandoning electronics from described electrolytical anion and hydroxide ion competition.Electrolytic anion with standard electrode potential less than hydroxide may substitute described hydroxide and oxidized, and therefore will not produce any oxygen.Equally, reduction is had the cation of the standard electrode potential larger than hydrogen ion, and will not produce any hydrogen.For alleviating this type of situation, following cation has the H of ratio
+Low electrode potential and therefore be suitable for use as electrolyte cation: Li
+, Rb
+, K
+, Cs
+, Ba
2+, Sr
2+, Ca
2+, Na
+And Mg
2+This also can use sodium and lithium, as long as can detrimentally not affect described VMJ photovoltaic cell-because it forms not expensive soluble salt.
Voltage-the distance Curve of each point on Figure 13 graphic extension VMJ photovoltaic cell 1310, wherein battery unit 1311,1317 intersects or shares shared border.As illustrated, VMJ photovoltaic cell 1310 comprises a plurality of battery units 1311,1317 that are connected in series, and the linear function that wherein said voltage can be used as the number of the battery that is stacked increases (for example, on trunnion axis from left to right).As illustrated among Figure 13, battery
1Two ends between voltage difference be 0.6 volt, and by stack of cells thereon
2, kind of the voltage difference of this in assembled battery is increased to 1.2 volts.Equally, by stack of cells thereon
3, described voltage difference rises to 1.8 volts.Therefore, electrolysis can occur between lip-deep any two points that surpass for the threshold value that makes water decomposition of described VMJ photovoltaic cell.For instance, for the open circuit voltage of 40 knot VMJ photovoltaic cells under 1000 sun optically focused, can produce 32 volts (for example, each battery unit is 0.8 volts).Suppose with 1.6 volts of initial electrolysis, then only two battery units just are enough to provide described voltage.In another aspect, when current loading increased, the voltage of being determined by the VMJ photovoltaic cell IV characteristic that is in maximum power under 1000 sun optically focused dropped to 0.6 volt of 24 volts or every battery unit.Therefore, can need three battery units, it contributes 1.8 volts to be used for to described cell reaction power supply.(electrolysis under the higher current density also can need overvoltage usually.）
Although should be further appreciated that under the background of single VMJ photovoltaic cell and describe electrolysis, the present invention is not so limited and can be embodied as the part of a plurality of VMJ photovoltaic cells (for example, in parallel and/or series connection, or each other operatively separation).By the current relationship of determining to form between each district that represents different voltages of VMJ photovoltaic cell, customizable VMJ photovoltaic cell designs to be provided for the extra contact area putting high current everywhere.For instance, can reduce by the metallization thickness that increases each some place pick-up current density (if this is what need).In addition, can adopt various forms of pressurizations to improve the collection (for example, screening mechanism, filter mechanism etc.) of the product (for example, hydrogen, oxygen) of electrolytic efficiency and/or decomposition.Should be appreciated that, the present invention is not limited to the electrolysis of water and can be suitably also belongs in the scope of the present invention with the electrolysis of mutual other compound of VMJ photovoltaic cell.
Figure 14 graphic extension is according to an aspect of the present invention via the correlation technique 1400 of the water electrolysis of VMJ photovoltaic cell.Although this paper is with described exemplary methods graphic extension and be described as the piece of a series of representative variety of events and/or action, the present invention is not limited by the illustrated order of this type of piece.For instance, according to the present invention, except the illustrated order of this paper, some actions or event can different order and/or are occured simultaneously with other action or event.In addition, implement the method according to this invention and may not need all illustrated pieces, event or action.In addition, should be appreciated that, can method illustrated with this paper and that describe be combined enforcement according to exemplary methods of the present invention and other method, and also can the system of graphic extension or description and equipment are not combined enforcement with other.Initial and at 1410 places, electrolyte solution is incorporated in the container that contains the VMJ photovoltaic cell, at VMJ photovoltaic cell described in the described container fully or roughly submergence.Then make this kind system stand incident light and mobile from described VMJ photovoltaic cell generation current at 1420 places.At 1430 places, described incident light can produce water electrolysis in whole electrolyte solution, and wherein meets or exceeds the arbitrary position be used to the threshold value that makes water decomposition (for example, about 1.2 volts), and electrolysis occurs.For instance, cross over the voltage (for example, for 1000 sun optically focused) that each battery unit can produce 0.6 volt and between the first battery unit district and the 3rd battery unit district, electrolysis can occur.Correspondingly, various collecting mechanisms (for example, barrier film, sieve plate etc.) can be positioned between the district of threshold value (for example, about 1.6) that voltage surpass to be used for electrolysis, thereby and collect the hydrogen that produces at 1440 places.Should be appreciated that, also can adopt such as other collection mechanisms such as collected downstream.
Figure 15 graphic extension can be used for the VMJ photovoltaic cell of electrolysis according to an aspect of the present invention.The battery units 1511 that VMJ photovoltaic cell 1515 is engaged by a plurality of integral body itself, 1517(1 are to n, and n is integer) form, wherein each battery unit itself is formed by stacking substrate or a layer (not shown).For instance, each battery unit 1511,1517 can comprise a plurality of parallel Semiconductor substrate that is stacked, and be made of the semi-conducting material that impurity mixes, the semi-conducting material that described impurity mixes forms PN junction and strengthens " inside " electrostatic dispersion field that the minority carrier towards this kind PN junction moves.In addition; by implementing one or more buffer strips 1510,1512; (for example can protect the various active layers at any end place of being positioned at VMJ photovoltaic cell 1515 part of its battery unit (and as); nn+ and/or p+n knot) avoids the stress of harmful form and/or strain (heat/mechanical pressure that for example, can in described VMJ photovoltaic cell, bring out in the making of VMJ photovoltaic cell and/or operating period, torsion, moment, shearing force etc.).Can form in this type of buffer strip 1510,1512 each via the material that has roughly low-resistivity ohm contact (for example, having less than about arbitrary scope of the upper limit of 0.5ohm-cm), alleviate simultaneously and/or eliminate the automatic doping of not expecting.For instance, can (for example use other p-type dopant by the low resistivity wafers that adopts p-type to mix, aluminium alloy) form buffer strip 1510,1512, with the risk that alleviates automatic doping (with adopt can produce the N-shaped wafer of not expecting the pn knot and compare-when expectation produces roughly the low-resistivity ohm contact).For instance, also can adopt catalyst material (for example, platinum, titanium etc.) at the terminal contacts place of described VMJ photovoltaic cell, to promote electrolysis procedure.）
The particular aspects of Figure 16 graphic extension battery unit 1600, its array can be formed for the VMJ photovoltaic cell of electrolysis of the present invention.Battery unit 1600 is included in the layer 1611,1613,1615 that is stacked in the layout of almost parallel.This type of layer 1611,1613,1615 can further comprise the semi-conducting material that impurity mixes, and its middle level 1613 is opposite conductivity type-to define PN junction at intersection point 1612 places for a kind of conductivity type and layer 1611.Equally, layer 1615 can be the conductivity type identical with layer 1613-in addition by roughly higher impurity concentration, strengthens the electrostatic dispersion field, inside that the minority carrier towards PN junction 1612 moves thereby produce.This type of battery unit integral body can be bonded together to form VMJ photovoltaic cell (for example, engaging the use catalyst material to strengthen electrolysis for this kind), it is described in detail such as preamble and carries out electrolysis.
According to more on the one hand, for making the VMJ photovoltaic cell by a plurality of batteries 1600, at first can be with identical PNN+(or NPP+) knot forms in the flat wafer of high resistivity (for example, being higher than 100ohm-cm) (having approximately 0.008 inch thickness) of N-type (or P type) silicon the approximately degree of depth of 3 to 10 μ m inches.Subsequently, with this type of PNN+ wafer stacking together, wherein thin aluminium lamination inserts between each wafer, and wherein the PNN+ of each wafer knot and crystal orientation can the equidirectional orientations.In addition, can adopt aluminium-silicon congruent melting alloy, or also can adopt and have approximate match in metals such as germanium and titanium or the metals such as molybdenum or tungsten of the hot coefficient of silicon.Next, described silicon wafer and aluminium alloy interface can be fused together, so that stacking sub-assembly can be bonded together (for example, further comprising catalyst material).Should be appreciated that, also can adopt other material, for example germanium and titanium.Equally, also can adopt aluminium-silicon congruent melting alloy.Should be further appreciated that and to select electrolyte so that it can detrimentally not affect the operation of VMJ photovoltaic cell, and/or cause the chemical reaction harmful to the VMJ photovoltaic cell.Should be appreciated that, a part and this type of layout that various N+ types and P type doped layer formation can be embodied as described battery unit also belong in the scope of the present invention.
Figure 17 graphic extension comprises the further aspect of the present invention for the VMJ photovoltaic cell with texturizing surfaces of electrolysis.Illustrate the vertically perspective schematic view of the groove surfaces 1700 of the part of many knot VMJ photovoltaic cells 1720 of according to an aspect of the present invention conduct.This veining 1700 is arranged so that refract light can be directed leaving p+ and n+ diffusing, doping district, produces simultaneously required carrier.Correspondingly, incident light can reflect in the plane 1710 with normal vector n.This kind plane 1710 is parallel to the PN junction plane of VMJ photovoltaic cell 1720, and can comprise the cross-sectional configuration of groove 1700.In other words, the orientation on plane 1710 is approximately perpendicular to stacked battery cells 1711,1713,1715 direction.This kind groove surfaces can increase the efficient of electrolysis process.
Figure 18 graphic extension is used for the exemplary texture with the surface groove of described VMJ photovoltaic cell, and described surface receives light thereon to be used for electrolytical electrolysis.This kind grooveization can be the form of chamber connected in star, for instance, as (for example have various angle θ, 0 °＜θ＜180 °) " V " shape cross-sectional configuration, " U " shape cross-sectional configuration etc., be approximately perpendicular to the direction of the battery unit of the described VMJ photovoltaic cell of stacking formation comprising the plane of described cross-sectional configuration, and/or be roughly parallel to the PN junction of described VMJ photovoltaic cell.Should be appreciated that, the veining 1810,1820 of VMJ photovoltaic cell of the present invention, 1830 the directed of PN junction and/or from incident light mutual on different with the prior art that is used for conventional Silicon photrouics texture.For instance, conventional Silicon photrouics is usually through veining penetrating with prevention light, so that absorb more longer wavelengths realizing better carrier electric current collection closer to PN junction (horizontal location), thereby and alleviate difference spectra response to longer wavelength in the solar spectrum.That compares is lower, and this does not need in VMJ photovoltaic cell of enhanced spectrum response of longer wavelength in comprising vertical junction and providing solar spectrum of the present invention.
But, (for example be used for the groove of enforcement Fig. 7, the V groove) a aspect is to come ameliorate body restructuring loss-(opposite with the conventional solar energy surface of using veining, this reduces reflection, or causes the light through reflection or refraction to become closer to knot) by reducing volume.In particular, the VMJ photovoltaic cell has represented for short wavelength and both better carrier electric current collection of long wavelength, and wherein said short wavelength response is because the horizontal junction of elimination top surface place high doped and described long wavelength response are because the collection efficiency of the enhancing of vertical junction.) as another example, if substitute chamber of the present invention connected in star texture, with other texture (for example, at random, pyramid, vaulted and similar convex configuration) be embodied as the part of VMJ photovoltaic cell, incident light becomes in all directions refraction so, thereby produces light absorption and therefore produce the efficient that reduces in p+ and n+ diffusion region.In addition, can apply to the dorsal part of described VMJ photovoltaic cell reflectance coating with further enhancing light absorption.
In another aspect, the present invention relates to improve photovoltaic cell (for example, solar cell) and especially under the high-level radiation grade, can produce the roughly performance of the high intensity solar cell (for example, edge illumination or vertical junction structure) of high electric power output.Enumerate in this article the various designs of PV element of the battery unit that is formed for making the VMJ photovoltaic cell to reduce the restructuring loss of photoproduction carrier via patterned contact.
Described VMJ photovoltaic cell has the intrinsic theoretical upper limit efficient above 30% under 1000 sun optically focused intensity, therefore use experiment to understand the experience that reaches from computer simulation and modeling analysis, and further performance improvement is possible.Although be easy to use the analysis equation formula with good result to conventional sun concentrating solar battery modeling, but really not so for the VMJ photovoltaic cell situation with the edge illumination of high-intensity operation, because under high strength, even second-order effects can have materially affect to battery-operated efficient.Although in conjunction with solar cell graphic extension aspect of the present invention or feature, but can be at other photovoltaic cell (for example, the battery that hot photovoltaic cell or the lasing light emitter by photon excite) utilizes this type of aspect or feature and related advantages (for example, the reduction of the restructuring of photoproduction carrier loss) in.In addition, also aspect of the present invention can be implemented in other class power conversion battery (for example, beta voltaic cell).
The electronics that in the solar cell under the high strength, the produces-right physical property very complex of electric hole carrier, because many physical parameters play a role, include but not limited to: surperficial restructuring speed, carrier mobility and concentration, emitter (for example, diffusion) reverse saturation current, minority carrier life-span, band gap narrow down, in-building type electrostatic field and various recombination mechanism.Mobility is fast reducing with the increase of carrier density, and lattice difficult to understand restructuring with as carrier density cube intensity increase fast.For this type of aspect being incorporated in the modeling of VMJ solar cell properties, computer simulation (for example, the two-dimensional digital computational analysis of photoproduction carrier transportation in the semiconductor) can provide with high-intensity operation or be used for the vertical junction battery unit of the operation under the high strength or the experience of the physical parameter of PV element.This analoglike provides the Analysis and design instrument to understand the performance that may originate and improve the VMJ photovoltaic cell under the high strength of effectiveness of performance.Should be appreciated that, even although be easy to use the simple analysis equation with good result to conventional sun concentrating solar battery modeling, but the VMJ photovoltaic cell situation for the edge illumination that operates with high exposure intensity is really not so, because under high strength, even second-order effects also can have strong effect to battery-operated efficient.
Issue some given zone that the third contact of a total solar or lunar eclipse is given birth to the restructuring loss of carrier based on incorporating in the calculating simulation exposure VMJ battery unit of contact to the model of contact VMJ battery unit that the Semiconductor Physics element arrays is arranged in high strength.At least some districts in this type of district present the complicated loss mechanism that depends on intensity.Calculating can be through improving the some districts to reduce the restructuring loss and to improve the performance of VMJ photovoltaic cell in simulation exposure PV element or the VMJ battery unit.Aspect of the present invention provides this type of improvement.
Series resistance has been regarded as the important sources of the design problem of conventional concentrator solar cell.VMJ photovoltaic cell design proof is more than enough in this regard, even show that series resistance is not a problem yet under the intensity of 2500 sun optically focused.Yet, in some cases, can be advantageously exchange less simplicity of design with the increase of series resistance, with improve the photovoltaic collector with the efficient near the VMJ photovoltaic cell of 1000 sun optically focused operations.
Should be appreciated that, for under the higher-strength roughly (for example, the design of operation 2500 sun optically focused that the VMJ photovoltaic cell still can operate efficiently) may need roughly harsher and expensive collector system engineering design aspect optics, structure, solar tracking and the thermal control, and can not any better overall performance of contribution or economic benefit.Therefore, the aspect of cited solar cell or feature and the technique that is associated that is used for its generation can improve the efficient performance of the high-strength V MJ photovoltaic cell that operates among the present invention in 1000 sun optically focused or higher scope.Efficient improves can make the VMJ solar cell or other solar cell cost that utilize aspect of the present invention more efficient and feasible, even it can relate to the potential increase of extra manufacturing and series resistance for the intensity greater than 1000 sun optically focused.Aspect described herein or feature can provide the compromise so that photovoltaic collector system of using solar cell, VMJ photovoltaic cell or utilizing in addition aspect of the present invention of enough engineering design provide low $/watt performance the time more feasible and cost is more efficient.
The real parameter (minority-carrier life-span, surperficial restructuring speed etc.) that use is processed greater than the good silicon under the intensity of 500 sun optically focused shows the following percentage restructuring loss of some given zone to the microcomputer modelling analysis of conventional VMJ battery unit design (the P+NN+ sheet that for example, has dark knot):
Therefore, this the analysis showed that its hard contact accounts for heavy doping P+ and the N+ diffused emitter district above half of all the restructuring losses in the battery unit that forms the VMJ solar cell, and the diffusion N+ emitter of optimization can be different from best diffusion P+ emitter (part is because ambulant difference) in design.The relative value that can lose for N+PP+ battery unit or P+NN+ battery unit (the having shallow P+N knot) restructuring of handover source in N+ and P+ district.On the one hand, the present invention is directed to the performance that the restructuring loss of reducing in the aforementioned diffusion region is improved the VMJ photovoltaic cell.
Open circuit voltage V by each battery unit knot under the high strength
Oc=0.8 volt, in conventional VMJ photovoltaic cell exploitation, successfully reach high minority-carrier life-span and low surperficial restructuring speed.V
OcElectric current and diffused emitter reverse saturation current (J by the daylight generation
o) determine, wherein be present in P+N in the battery unit of VMJ solar cell and NN+ and tie both and contribute for open circuit voltage.Become minimum J from the best of TV point
oUse J
o=1x10
– 13Acm
– 2, it represents the low reverse saturation current of high-quality in the diffusion junctions, analyzes to show that the about diffusion depth of 3 to 10 μ m spreads both sufficient degree of depth for being used for P+ and N+, even when considering the unlimited restructuring speed at ohmic metal contacts place.
Should note, even dark and progressive NN+ diffusion profiles will provide the electrostatic dispersion field, inside (for final collection) that the minority carrier that will strengthen towards the knot barrier moves and reduce restructuring in this district, but computer simulation discloses the enhancing of NN+ knot and become more ineffective under high strength, and this can cause the higher restructuring in the N+ as implied above district.
Content mentioned above comprises the example of the system and method that advantage of the present invention is provided.Certainly, can not describe for describing purpose of the present invention each combination that can conceive of each assembly or method, but those skilled in the art will appreciate that, the subject matter of asking can have many other combinations and arrangement.In addition, with regard to this detailed description, claims, annex and graphic in used term " comprise (includes) ", " having (has) ", " having (possesses) " etc., the mode that comprises of this type of term is set be similar to term " comprise (comprising) " when in claims, being used as adversative " comprising (comprising) " explained like that.
Claims (18)
1. electrolysis system is characterized in that comprising:
The VMJ photovoltaic cell, it comprises a plurality of whole battery units that engage, each battery unit has a plurality of layers that form PN junction; And
Electrolyte, it receives the electric current that described VMJ photovoltaic cell produces decomposes described electrolyte.
2. electrolysis system according to claim 1 is characterized in that the voltage difference between the described battery unit two ends is at least 0.6 volt.
3. electrolysis system according to claim 1 is characterized in that described VMJ photovoltaic cell has groove surfaces.
4. electrolysis system according to claim 3 is characterized in that described groove surfaces comprises V-arrangement cross-sectional configuration or U-shaped cross-section configuration.
5. electrolysis system according to claim 1 is characterized in that described battery unit comprises a plurality of parallel Semiconductor substrate that is stacked.
6. electrolysis system according to claim 5 is characterized in that described Semiconductor substrate is made of the semi-conducting material that impurity mixes.
7. electrolysis system according to claim 6 is characterized in that semi-conducting material that described impurity mixes comprises PN junction and strengthens the electrostatic dispersion field, inside that the minority carrier towards this kind PN junction moves.
8. electrolysis system according to claim 6; it is characterized in that the semi-conducting material that described impurity mixes further comprises one or more buffer strips, can protect the various active layers at any end place that is positioned at the VMJ photovoltaic cell to avoid stress and/or the strain of harmful form.
9. electrolysis system according to claim 8 is characterized in that described buffer strip forms via the material with low-resistivity ohm contact.
10. method that makes the electrolyte electrolysis is characterized in that comprising:
Integrally engage a plurality of active layers have buffer strip with formation VMJ photovoltaic cell; And
From described VMJ photovoltaic cell generation current to be used for electrolytical electrolysis.
11. the described method that makes the electrolyte electrolysis is characterized in that further comprising by the heat regulation sub-assembly described VMJ photovoltaic cell is cooled off according to claim 10.
12. the described method that makes the electrolyte electrolysis is characterized in that further comprising partially or even wholly the VMJ photovoltaic cell is immersed in water/electrolyte according to claim 10.
13. the described method that makes the electrolyte electrolysis according to claim 10 is characterized in that further being included on the surface of described VMJ photovoltaic cell and forms a plurality of anodes and negative electrode.
14. the described method that makes the electrolyte electrolysis is characterized in that further comprising and implements buffer strip so that the barrier of its active layer of protection to be provided according to claim 10.
15. the described method that makes the electrolyte electrolysis according to claim 10 is characterized in that describedly integrally engaging a plurality of active layers and further comprising the whole battery unit that engages.
16. the described method that makes the electrolyte electrolysis is characterized in that further comprising that fusion silicon wafer and aluminium interface are to form the VMJ photovoltaic cell according to claim 10.
17. the described method that makes the electrolyte electrolysis is characterized in that further using the impurity doped semiconductor material to form PN junction in the what VMJ photovoltaic cell according to claim 10.
18. an electrolysis system is characterized in that comprising:
Be used for making via incident light the degradable member of electrolyte decomposition, described degradable member further comprises for the member that strengthens the spectral response of wavelength; And
For the member that described degradable member is cooled off.
Applications Claiming Priority (18)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8893608P | 2008-08-14 | 2008-08-14 | |
| US8892108P | 2008-08-14 | 2008-08-14 | |
| US61/088,936 | 2008-08-14 | ||
| US61/088,921 | 2008-08-14 | ||
| US8938908P | 2008-08-15 | 2008-08-15 | |
| US61/089,389 | 2008-08-15 | ||
| US9253108P | 2008-08-28 | 2008-08-28 | |
| US61/092,531 | 2008-08-28 | ||
| US12/535,952 US20100037937A1 (en) | 2008-08-15 | 2009-08-05 | Photovoltaic cell with patterned contacts |
| US12/535,952 | 2009-08-05 | ||
| US12/536,987 | 2009-08-06 | ||
| US12/536,982 US20100037943A1 (en) | 2008-08-14 | 2009-08-06 | Vertical multijunction cell with textured surface |
| US12/536,992 | 2009-08-06 | ||
| US12/536,987 US8106293B2 (en) | 2008-08-14 | 2009-08-06 | Photovoltaic cell with buffer zone |
| US12/536.992 | 2009-08-06 | ||
| US12/536,992 US8293079B2 (en) | 2008-08-28 | 2009-08-06 | Electrolysis via vertical multi-junction photovoltaic cell |
| US12/536,982 | 2009-08-06 | ||
| CN2009801392214A CN102171840A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801392214A Division CN102171840A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103354247A true CN103354247A (en) | 2013-10-16 |
| CN103354247B CN103354247B (en) | 2016-10-05 |
Family
ID=43663782
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310219468.5A Expired - Fee Related CN103354247B (en) | 2008-08-14 | 2009-08-12 | Electrolysis system and the method making electrolyte be electrolysed |
| CN201310219215.8A Expired - Fee Related CN103337546B (en) | 2008-08-14 | 2009-08-12 | There is photovoltaic cell and the related application of treated surface |
| CN2009801392214A Pending CN102171840A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
| CN2013102194702A Pending CN103337547A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310219215.8A Expired - Fee Related CN103337546B (en) | 2008-08-14 | 2009-08-12 | There is photovoltaic cell and the related application of treated surface |
| CN2009801392214A Pending CN102171840A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
| CN2013102194702A Pending CN103337547A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
Country Status (11)
| Country | Link |
|---|---|
| EP (1) | EP2327107A1 (en) |
| JP (1) | JP2012500474A (en) |
| CN (4) | CN103354247B (en) |
| AU (1) | AU2009281960A1 (en) |
| BR (1) | BRPI0917838A2 (en) |
| CA (2) | CA2820184A1 (en) |
| IL (1) | IL211205A0 (en) |
| MX (1) | MX2011001738A (en) |
| RU (2) | RU2472251C2 (en) |
| TW (1) | TWI535042B (en) |
| WO (1) | WO2010019685A1 (en) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI418046B (en) * | 2010-12-03 | 2013-12-01 | Mh Solar Co Ltd | A manufacturing method for the multi-junction solar cell |
| TWI424657B (en) * | 2010-12-03 | 2014-01-21 | Mh Solar Co Ltd | Concentrating solar cell system with the heating device |
| TWI420798B (en) * | 2010-12-03 | 2013-12-21 | Mh Solar Co Ltd | Hybrid solar energy power system |
| TWI420781B (en) * | 2010-12-06 | 2013-12-21 | Mh Solar Co Ltd | A portable solar cell device with self-power generation |
| TWI420782B (en) * | 2010-12-06 | 2013-12-21 | Mh Solar Co Ltd | A electronic device with self power generation |
| CN102646749A (en) * | 2011-02-18 | 2012-08-22 | 美环光能股份有限公司 | Manufacturing method of vertical multi-junction solar cell |
| CN102437208B (en) * | 2011-12-08 | 2013-11-20 | 上海太阳能电池研究与发展中心 | Mechanically assembled solar cell |
| TWI506801B (en) * | 2011-12-09 | 2015-11-01 | Hon Hai Prec Ind Co Ltd | Solar battery |
| CN103165719B (en) * | 2011-12-16 | 2016-04-13 | 清华大学 | Solar cell |
| CN103165742B (en) * | 2011-12-16 | 2016-06-08 | 清华大学 | The preparation method of solar cell |
| CN103165690B (en) | 2011-12-16 | 2015-11-25 | 清华大学 | Solar cell |
| CN103178137B (en) * | 2011-12-22 | 2016-04-13 | 清华大学 | Solar battery group |
| RU2487437C1 (en) * | 2012-02-02 | 2013-07-10 | Федеральное государственное унитарное предприятие "Всероссийский Электротехнический институт им. В.И. Ленина" (ФГУП ВЭИ) | Photoelectronic element |
| DE102012205258A1 (en) | 2012-03-30 | 2013-10-02 | Evonik Industries Ag | Photoelectrochemical cell, system and method for light-driven generation of hydrogen and oxygen with a photo-electrochemical cell and method for producing the photo-electrochemical cell |
| US20150340521A1 (en) * | 2012-12-20 | 2015-11-26 | The Trustees Of Boston College | Methods and Systems for Controlling Phonon-Scattering |
| TWI513017B (en) * | 2013-06-28 | 2015-12-11 | Mh Gopower Company Ltd | Solar cell having a passivation layer and method of manufacturing the same |
| TWI513018B (en) * | 2013-06-28 | 2015-12-11 | Mh Gopower Company Ltd | Solar cell having an anti-reflective layer and method of manufacturing the same |
| US9786800B2 (en) | 2013-10-15 | 2017-10-10 | Solarworld Americas Inc. | Solar cell contact structure |
| TWI639247B (en) * | 2015-06-29 | 2018-10-21 | 美環能股份有限公司 | Energy conversion device with multiple voltage outputs and power transistor module using the same |
| US10553736B2 (en) * | 2015-07-01 | 2020-02-04 | Mh Go Power Company Limited | Photovoltaic power converter receiver |
| CN105261659A (en) * | 2015-11-12 | 2016-01-20 | 天津三安光电有限公司 | Solar cell and manufacturing method thereof |
| US11431280B2 (en) * | 2019-08-06 | 2022-08-30 | Tesla, Inc. | System and method for improving color appearance of solar roofs |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4332973A (en) * | 1974-11-08 | 1982-06-01 | Sater Bernard L | High intensity solar cell |
| US4516314A (en) * | 1974-11-08 | 1985-05-14 | Sater Bernard L | Method of making a high intensity solar cell |
| US4082570A (en) * | 1976-02-09 | 1978-04-04 | Semicon, Inc. | High intensity solar energy converter |
| US4193081A (en) * | 1978-03-24 | 1980-03-11 | Massachusetts Institute Of Technology | Means for effecting cooling within elements for a solar cell array |
| US4996577A (en) * | 1984-01-23 | 1991-02-26 | International Rectifier Corporation | Photovoltaic isolator and process of manufacture thereof |
| US4634641A (en) * | 1985-07-03 | 1987-01-06 | The United States Of America As Represented By The United States Department Of Energy | Superlattice photoelectrodes for photoelectrochemical cells |
| JP2784841B2 (en) * | 1990-08-09 | 1998-08-06 | キヤノン株式会社 | Substrates for solar cells |
| JPH0797653B2 (en) * | 1991-10-01 | 1995-10-18 | 工業技術院長 | Photoelectric conversion element |
| US5261969A (en) * | 1992-04-14 | 1993-11-16 | The Boeing Company | Monolithic voltage-matched tandem photovoltaic cell and method for making same |
| US5266125A (en) * | 1992-05-12 | 1993-11-30 | Astropower, Inc. | Interconnected silicon film solar cell array |
| JP3152328B2 (en) * | 1994-03-22 | 2001-04-03 | キヤノン株式会社 | Polycrystalline silicon device |
| JPH08125210A (en) * | 1994-10-24 | 1996-05-17 | Jiyousuke Nakada | Photodetector, photodetector array, and electrolysis device using them |
| JP2762993B2 (en) * | 1996-11-19 | 1998-06-11 | 日本電気株式会社 | Light emitting device and method of manufacturing the same |
| CA2287209C (en) * | 1998-01-23 | 2003-08-26 | Josuke Nakata | Solar battery module for photoelectrolytic device and photoelectrolytic device |
| JP2002170980A (en) * | 2000-11-30 | 2002-06-14 | Rasa Ind Ltd | Photoelectric cell for electrolysis of aqueous solution |
| US6611085B1 (en) * | 2001-08-27 | 2003-08-26 | Sandia Corporation | Photonically engineered incandescent emitter |
| JP2003124481A (en) * | 2001-10-11 | 2003-04-25 | Mitsubishi Heavy Ind Ltd | Solar battery |
| RU2210142C1 (en) * | 2002-04-17 | 2003-08-10 | Общество с ограниченной ответственностью Научно-производственный центр завода "Красное знамя" | Solar cell manufacturing process |
| CN1177375C (en) * | 2003-01-14 | 2004-11-24 | 河北科技大学 | Solar energy conversion photocell with multi-junction and poles joined |
| US7812249B2 (en) * | 2003-04-14 | 2010-10-12 | The Boeing Company | Multijunction photovoltaic cell grown on high-miscut-angle substrate |
| US7718888B2 (en) * | 2005-12-30 | 2010-05-18 | Sunpower Corporation | Solar cell having polymer heterojunction contacts |
| CN101461068B (en) * | 2006-06-14 | 2010-09-08 | 京半导体股份有限公司 | Rod-type semiconductor device |
| CN100463231C (en) * | 2007-07-13 | 2009-02-18 | 南京大学 | Setup method for indium-gallium-nitride p-n node type multi-node solar battery structure |
-
2009
- 2009-08-12 RU RU2011109164/28A patent/RU2472251C2/en not_active IP Right Cessation
- 2009-08-12 CA CA2820184A patent/CA2820184A1/en not_active Abandoned
- 2009-08-12 AU AU2009281960A patent/AU2009281960A1/en not_active Abandoned
- 2009-08-12 CA CA2733976A patent/CA2733976C/en not_active Expired - Fee Related
- 2009-08-12 CN CN201310219468.5A patent/CN103354247B/en not_active Expired - Fee Related
- 2009-08-12 CN CN201310219215.8A patent/CN103337546B/en not_active Expired - Fee Related
- 2009-08-12 CN CN2009801392214A patent/CN102171840A/en active Pending
- 2009-08-12 MX MX2011001738A patent/MX2011001738A/en active IP Right Grant
- 2009-08-12 CN CN2013102194702A patent/CN103337547A/en active Pending
- 2009-08-12 EP EP09807234A patent/EP2327107A1/en not_active Withdrawn
- 2009-08-12 JP JP2011523143A patent/JP2012500474A/en active Pending
- 2009-08-12 BR BRPI0917838A patent/BRPI0917838A2/en not_active IP Right Cessation
- 2009-08-12 WO PCT/US2009/053576 patent/WO2010019685A1/en active Application Filing
- 2009-08-14 TW TW098127486A patent/TWI535042B/en not_active IP Right Cessation
-
2011
- 2011-02-13 IL IL211205A patent/IL211205A0/en unknown
-
2012
- 2012-10-02 RU RU2012141985/28A patent/RU2012141985A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| MX2011001738A (en) | 2011-08-12 |
| CA2820184A1 (en) | 2010-02-18 |
| EP2327107A1 (en) | 2011-06-01 |
| BRPI0917838A2 (en) | 2017-02-14 |
| WO2010019685A4 (en) | 2010-05-06 |
| RU2012141985A (en) | 2014-05-10 |
| IL211205A0 (en) | 2011-04-28 |
| CN103337547A (en) | 2013-10-02 |
| WO2010019685A1 (en) | 2010-02-18 |
| RU2472251C2 (en) | 2013-01-10 |
| CN102171840A (en) | 2011-08-31 |
| CN103354247B (en) | 2016-10-05 |
| AU2009281960A1 (en) | 2010-02-18 |
| CN103337546B (en) | 2017-03-01 |
| TW201013951A (en) | 2010-04-01 |
| TWI535042B (en) | 2016-05-21 |
| CA2733976C (en) | 2015-12-22 |
| RU2011109164A (en) | 2012-09-20 |
| JP2012500474A (en) | 2012-01-05 |
| CA2733976A1 (en) | 2010-02-18 |
| CN103337546A (en) | 2013-10-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103354247B (en) | Electrolysis system and the method making electrolyte be electrolysed | |
| Milichko et al. | Solar photovoltaics: current state and trends | |
| Moss et al. | A review of inorganic photoelectrode developments and reactor scale‐up challenges for solar hydrogen production | |
| Goetzberger et al. | Photovoltaic solar energy generation | |
| CN101226968A (en) | Method for reducing series resistance value of light gathering solar battery and light gathering solar battery obtained by the method | |
| US20100037937A1 (en) | Photovoltaic cell with patterned contacts | |
| US8293079B2 (en) | Electrolysis via vertical multi-junction photovoltaic cell | |
| Kumar et al. | Materials in harnessing solar power | |
| Bubenzer et al. | Photovoltaics guidebook for decision-makers: technological status and potential role in energy economy | |
| Van Roosmalen | Molecular-based concepts in PV towards full spectrum utilization | |
| Ontiri et al. | A Review of Emerging Photovoltaic Construction Technologies to Increase Efficiencies in Solar as a Renewable Energy Source | |
| CN112086560B (en) | Laminated battery and preparation method thereof | |
| US20170084763A1 (en) | Semiconductor device | |
| CN108461558A (en) | Avoid generating the two-sided photovoltaic stacked wafer moudle of hot spot effect | |
| CN102646749A (en) | Manufacturing method of vertical multi-junction solar cell | |
| AU2013251282B2 (en) | Photovoltaic cells with processed surfaces and related applications | |
| Richards et al. | Photovoltaics devices | |
| Klein et al. | Fundamentals of solar energy | |
| Debney et al. | Terrestrial solar cells—present and future | |
| Sun | Development of Silver-Free Silicon Photovoltaic Solar Cells with All-Aluminum Electrodes | |
| McEvoy et al. | Photovoltaic Cells for Sustainable Energy | |
| Luther et al. | Solar modules and photovoltaic systems | |
| Barr | Evaluation of the commercial potential of novel organic photovoltaic technologies | |
| Shaner | An Experimental and Technoeconomic Study of Silicon Microwire Arrays for Fuel Production Using Solar Energy | |
| IHARA¹ et al. | 19. DIRECT USE OF SOLAR ENERGY: SOLAR CELL |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20161005 Termination date: 20190812 |