CN103337547A - Photovoltaic cells with processed surfaces and related applications - Google Patents
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- H01L31/042—PV modules or arrays of single PV cells
- H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
Photovoltaic cells and processes that mitigate recombination losses of photogenerated carriers are provided. To reduce recombination losses, diffuse doping layers in active photovoltaic (PV) elements are coated with patterns of dielectric material(s) that reduce contact between metal contacts and the active PV element. Various patterns can be utilized, and one or more surfaces of the PV element can be coated with one or more dielectrics. Vertical Multi-Junction photovoltaic cells can be produced with patterned PV elements, or unit cells. While patterned PV elements can increase series resistance of VMJ photovoltaic cells, and patterning one or more surfaces in the PV element can add complexity to a process utilized to produce VMJ photovoltaic cells, reduction of carrier losses at diffuse doping layers in a PV element increases efficiency of photovoltaic cells, and thus provide with PV operational advantages that outweigh increased manufacturing complexity. System to fabricate the photovoltaic cells is provided.
Description
The application be international application no be PCT/US2009/053576, Chinese application number to be 200980139221.4 denomination of invention be the dividing an application of the patent application of " photovoltaic cell and related application with treated surface ", the international filing date of original application is 2009 years 08 month 12 days.
Technical field
The request of the application's case is to the rights and interests of following application case: on August 15th, 2008 file an application and title for " solar cell (SOLAR CELL WITH PATTERNED CONTACTS) with patterned contact " the 61/089th, No. 389 U.S. Provisional Application cases, its request is for filing an application on August 5th, 2009 and title is the priority of the 12/535th, No. 952 U.S. patent application case of " photovoltaic cell (PHOTOVOLTAIC CELL WITH PATTERNED CONTACTS) with patterned contact "; On August 6th, 2009 file an application and title for " the vertical multijunction cell (VERTICAL MULTI JUNCTION CELL WITH TEXTURED SURFACE) with texturizing surfaces " the 12/536th, No. 982 U.S. patent application case, its request is for filing an application on August 14th, 2008 and title is the priority of the 61/088th, No. 921 U.S. Provisional Application case of " the vertical multijunction cell (VERTICAL MULTIJUNCTION CELL WITH TEXTURED SURFACE) with texturizing surfaces "; On August 6th, 2009 file an application and title for " photovoltaic cell (PHOTOVOLTAIC CELL WITH BUFFER ZONE) with buffer strip " the 12/536th, No. 987 U.S. patent application case, its request is for filing an application on August 14th, 2008 and title is the priority of the 61/088th, No. 936 U.S. Provisional Application case of " solar cell (SOLAR CELL WITH BUFFER ZONE) with buffer strip "; And on August 6th, 2009 file an application and title for " via the electrolysis (ELECTROLYSIS VIA VERTICAL MULTI-JUNCTION PHOTOVOLTAIC CELL) of vertical multi-junction photovoltaic battery " the 12/536th, No. 992 U.S. patent application case, its request is for filing an application on August 28th, 2008 and title is the priority of the 61/092nd, No. 531 U.S. Provisional Application case of " via the electrolysis (ELECTROLYSIS VIA VERTICAL MULTI-JUNCTION SOLAR CELL) of vertical multijunction solar cell ".Above the full text of each application case of reference is incorporated herein by reference.
Background technology
The limited supply of fossil energy and its demand of increase and the global environment that is associated destroyed ordered about the whole world and make great efforts to make and utilize the energy and correlation technique diversification.A kind of this type of resource is solar energy, and it adopts photovoltaic (PV) technology that light is converted to.In addition, solar energy can be used for heat generation (for example, in solar furnace, steam generator etc.).Heliotechnics is generally implemented in a series of PV batteries or solar cell or its panel, and it receives daylight and daylight is converted to electricity, and electricity can be passed in the power network subsequently.Reach major progress in the design of solar panel and in producing, it increases efficient effectively and reduces its manufacturing cost simultaneously.Along with developing the higher solar cell of efficient, the size of battery reduces, and reduces gradually and the actual property increase of the competitive rechargeable energy of tool of the non-renewable source of height requirement thereby cause adopting solar panel to provide substituting.For this reason, can dispose as solar energy collecting systems such as solar collectors solar energy be converted to the electricity that can be passed to power network and also gather in the crops heat.Except exploitation solar collector technology, also begun to utilize solar collector to develop solar cell.
The high intensity solar cell technology that is called vertical many knot VMJ solar cells is the array that is connected in series that edge illumination and the integral body of holding the small-sized vertical junction battery unit with electric contact engage.Described unique VMJ solar cell design can provide height to force down the series resistance output characteristic inherently, thereby makes it be suitable for efficient performance in the high strength photovoltaic collector ideally.Another key feature of VMJ solar cell is its simplicity of design that causes low manufacturing cost.
Can be according to the effectiveness of the performance data proof VMJ solar cell of in the scope of 100 to 2500 sun optically focused intensity, obtaining at the experimental VMJ solar cell with 40 knots that are connected in series, wherein output power density surpasses 400,000 watts/m under 25 volts
2, its efficient is near 20%.Should be appreciated that the above-mentioned performance in the VMJ solar cell realizes by low manufacturing cost and the low complexity of making.Believe that this type of aspect is to make that the photovoltaic collector system is the required boost motor of the more efficient and feasible needed practical technical performance of cost and business efficiency significantly solving global energy problem.In addition, any increase of battery efficiency (for example, exporting more watts) can directly reduce collector system size (for example, the lower cost that is associated with bill of materials), thus produce low $/watt the photovoltaic electric power cost.
It should be noted that lower/watt cost adopts with solar battery technology in fact and market penetration is relevant, because global energy requirement positive stabilization increases (not only in emerging nation but also in developed country), traditional fossil fuel cost just progressively raises simultaneously.In addition, there is concern to the extensive increase of all associated problem (for example, environmental pollution, global warming and the national security that links together with dependence to external fuel supply and economic dangerous).These environment, economy and the safety factor relevant with the public awareness that increases just ordered about finding the great interest of cost-effective more and environmentally friendly rechargeable energy solution.In all available regenerative resources, solar energy has the roughly maximum potential that satisfies the demands in efficient and lasting mode.In fact, the cycle of the earth per a few minutes receives the energy of the daylight form that can Duo from the energy of all other resource consumptions roughly than human a year and a day.
Even photovoltaic electric power is considered as desirable rechargeable energy technology widely, cost can be the major obstacle of employing and market penetration but it is associated.Before obtaining the market share and adopting, need become than conventional power source (comprise well and develop, be used for consumer and the coal-fired electric power of cost-effective roughly) tool cost competitiveness based on the electric power of photovoltaic.In addition, the availability of low-cost electric power is regarded as essence in all global economy bodies; The terawatt (TW) (for example, thousands of 1,000,000,000 watts) that therefore can need photovoltaic power system.Market survey shows that base cost that the photovoltaic power system install must drop to watt could not have under the situation of subsidy and deserve to be called tool cost competitiveness in big effectiveness sizable application.Surpass $6/ watt because institute's photovoltaic system cost of installing is current, so still need the improvement of essence cost.
In the past between decades, attempt reaching low $/watt performance be the primary goals of most researchs and exploitation in the photovoltaic technology.Although described industry cost multi-million dollar is pursued various technology (target is to make photovoltaic energy cost-effective more), existing photovoltaic industry still needs quite big subsidy to come supports sales, and this can be the index of the unfavorable situation of market development and industry development.
Current, the photovoltaic market of silicon solar cell (roughly the same when its maintenance and the initial discovery of the sixties in 20th century and development) domination～93%.The existing photovoltaic industry of trying hard to reduce cost depends on the availability of low-cost waste material level semiconductor silicon deeply and makes conventional solar cell.It should be noted that this kind tailing level silicon (often being called solar energy level silicon) mainly is the defective material from the semiconductor device manufacturer refusal of the first class silicon wafer of the remaining ingot casting head of wafer manufacture and tail and the quality of having relatively high expectations.Although the photovoltaic sales volume increases fast, in the past decade annual growth～40%(wherein 2007 annual productions be estimated as 3.8 ten hundred million watts (GW), sales volume is subjected to the shortage of solar energy level silicon and the obstruction of higher price now.Although first class silicon can be used, it is not regarded as option, because it makes manufacturing cost further increase several times.
For the conventional solar cell of typical case, surpass half manufacturing cost and be the original polycrystalline silicon semiconductor for the production of the wafer that is used for solar cell.Therefore, the solar cell of typical 14% efficient is rated for 0.014W/cm
2And before any extra manufacturing, have and be higher than watt (or
2) the silicon wafer cost.Therefore, existing photovoltaic industry must propose and solve and only begin the fact that the silicon materials cost surpasses the benchmark price effectiveness needs of large-scale application.The aspect produces on the area basis to surpass $100/cm as a comparison
2The semiconductor maker of the microprocessor chip of selling can bear and the cost that utilizes the first class silicon wafer to be associated.
The shortage of solar energy level silicon and photovoltaic industry can not reach important base cost together with exploitation be used for novelty that space uses more the appearance of high-efficiency three-joint solar cell produce a large amount of interest to the photovoltaic collector recently again.The obvious advantage of photovoltaic collector is, owing to use large tracts of land not expensive material (glass-mirror reflector or plastic lens) daylight is gathered in the implicit costs benefit that produces on the much smaller expensive solar cell of area, thereby the use inexpensive materials replaces expensive material.The photovoltaic collector that is designed for 1000 sun optically focused intensity can need expensive semiconductor silicon significantly to reduce～99.9%, and the expensive semiconductor silicon of the current needed same amount of conventional solar cell that this VMJ solar cell that means 1000MW uses 1MW is possible.Pragmatism ground, this is regarded as relaxing the practical methods of arbitrary silicon shortage problem.
Quite a lot of work majority to solar collector focuses on exploitation for high-intensity silicon concentrator solar cell design; Though done a large amount of fruitful developments during the energy crisis seventies of 20th century, its result was in the cost benefit performance golden mean of the Confucian school and can not be satisfactory at that time.Carried out being research and the exploitation of target with the silion cell that is used for the collector system of the intensity operation of 500 sun optically focused at first; Yet, when in the series resistance problem of attempting overcoming in the solar cell design of studying, run into unsolved exploitation at need described target be reduced to 250 sun optically focused.For instance, the loss of the high series resistance in the concentrator solar cell once was regarded as conventional VMJ solar battery technology really and had proposed and settled subject matter.It should be noted that the quite most of solar cell at the collector technological development manufactures suitable complexity and costliness, it is by 1000 ℃ of 6 or 7 high-temperature step (〉) and 6 or 7 photoetching coverage steps.This complexity is attempted owing to minimizing the design of basically the maximum intensity performance constraint of the preferred design in these designs being lost for the series resistance that is not higher than 250 sun optically focused.This kind complexity and the cost that is associated hinder the essence development of collector technology and the solar battery technology that is associated, and promote the development as substitute technologies such as thin film solar cell technologies.
Vertical many knot VMJ solar battery technologies roughly are different from conventional concentrator solar cell.Described VMJ solar battery technology provides at least two advantages with respect to other technology: it does not need photoetching (1), and (2) can adopt greater than the single High temperature diffusion step under 1000 ℃ the temperature and form two knots.Therefore, low manufacturing cost is natural.In addition, can high-intensity operation VMJ solar cell; For example with 2500 sun optically focused operations.From then on it is apparent to plant operation, and series resistance also is out of question in the VMJ solar cell design; Even when intensity is higher than the order of magnitude of conventional general knowledge, also be out of question, even if this is infeasible economically.In addition, the current density of the VMJ battery unit under 2500 sun optically focused is usually near 70A/cm
2, this is the radiation levels that can roughly be harmful to the most solar cells based on other technology.
As mentioned above, mainly be because the development that three-joint solar cell is made to V material (comprising gallium (Ga), phosphorus (P), arsenide (As), indium (In) and germanium (Ge)) by III again to the interest of photovoltaic collector.Three junction batteries can use 20 to 30 the series connection different semiconductors of layerings on germanium wafer: grow in metal organic chemical vapor deposition (MOCVD) reactor through doping GaInP
2And the GaAs layer, wherein the semiconductor of each type will have and cause it to absorb the characteristic band-gap energy of daylight most effectively with a certain color.Described semiconductor layer selects to absorb near whole solar spectrum through meticulous, thereby from daylight generating as much as possible.These many knot devices are solar cells the most efficiently up to the present, and it is issued to the high record of 40.7% efficient at appropriate solar energy collecting and laboratory condition.But because it manufactures costliness, so it need be applied in the photovoltaic collector.
Yet, III is increased just fast to demand and the cost thereof of V solar cell material.As an example, in 12 months (12/2006 to 12/2007), the cost of pure gallium from about $350/Kg Zeng Jiadao $680/kg and germanium price roughly Zeng Jiadao $1000 to $1200/Kg.Indium at price price $94/Kg in 2002 was increased near $1000/Kg in 2007.In addition, estimate to the demand of indium along with some new companies beginning in 2007 to film CIGS(CuInGaSe) the extensive manufacturing of solar cell and continue to increase.In addition, indium is the rare element that is widely used in the transparent electropaining layer of the indium tin oxide form that is formed for LCD and massive plate monitor.Practically, as if these materials are not to solve main global energy problem to provide terawatt (TW) the low-cost needed feasible long-term photovoltaic of electric power (PV) solution.
Although area is 0.26685cm
2III can produce power (or about 10W/cm of 2.6 watts to the V semiconductor solar cell
2), and estimated that this kind technology can finally produce electricity with 8 to 10 minutes/kWh, but roughly be similar to the price from the electricity in conventional source, can need further to analyze to support this kind estimation.Yet the semi-conducting material that VMJ solar cell use cost is minimum is manufactured on by low cost and shows under the intensity of 2500 sun optically focused and surpass 40W/cm
2Power output.(this power output surpasses 400,000W/m
2) except the complicated PV technology based on advanced material, keep roughly ascendancy based on the solar battery technology of Si at photovoltaic element and in using.In addition, if the whole world needs to occur, silicon is the unique semi-conducting material that can supply the existing industry of having of terawatt (TW) photovoltaic electric power basis in the foreknowable future of extensively whole world application.
Summary of the invention
Hereinafter present and simplify summary so that the basic comprehension to aspects more described herein to be provided.This summary is not exhaustive overview, the unvested scope of identifying key/critical element or portraying various aspects described herein yet.Its sole purpose is to present the preorder that is described in more detail that some concepts are used as presenting after a while in simplified form.
The invention provides the photovoltaic cell of based semiconductor and alleviate the technology of the reorganization loss of photoproduction carrier.On the one hand, be to reduce the reorganization loss, apply diffusing, doping layer in the described PV of the acting on element with reducing hard contact and the dielectric substance pattern that contacts between the effect photovoltaic element.Can utilize various patterns, and available one or more dielectrics apply one or more surfaces of described PV element.Can produce vertical many knot VMJ solar cells by patterned PV element or battery unit.Patterned PV element can increase the series resistance of VMJ solar cell, and the technology interpolation complexity for generation of the VMJ solar cell can be given in one or more surfaces in the described PV element of patterning; In addition, the carrier loss at reduction diffusing, doping layer place can increase the efficient of solar cell and therefore the PV service advantages that surpass the manufacturing complexity that increases are provided.The system of the making of the PV battery of realizing based semiconductor also is provided.
Can in arbitrary class photovoltaic cell (for example, the battery that solar cell, hot photovoltaic cell or the lasing light emitter by photon excite), utilize aspect described herein or feature and related advantages, for example reduce the reorganization loss of photoproduction carrier.In addition, also aspect of the present invention can be implemented in other class power conversion battery (for example, beta voltaic cell (betavoltaic cell)).
The present invention loses via the body weight group that the veining on the optical receiving surface of vertically tying the VMJ photovoltaic cells alleviates in the described vertical VMJ of the knot photovoltaic cells more more.Described texture can be the form of chamber connected in star (as " V " shape cross-sectional configuration, " U " shape cross-sectional configuration etc.), is approximately perpendicular to the direction of the battery unit that piles up formation VMJ photovoltaic cell comprising the plane of this kind cross-sectional configuration.In one aspect, comprise that the plane of roughly repeating cross section (for example, transversal groove extend direction) thereon is approximately perpendicular to the direction of piling up described battery unit.This arranges p+ and the n+ diffusing, doping district that promotes the refract light guiding is left the VMJ photovoltaic cell, produces required carrier simultaneously in the volume that reduces.Correspondingly, incident light can reflect comprising described cross-sectional configuration and be approximately perpendicular in the plane of the described direction of piling up described battery unit.
Should be appreciated that the veining of VMJ photovoltaic cell of the present invention is different with the prior art that is used for conventional silicon photovoltaic cell texture on the directed of PN junction and/or aspect mutual two of incident light.For instance, conventional silicon photovoltaic cell is usually through veining penetrating with prevention light, make more to absorb more longer wavelengths realizing better carrier electric current collection close to PN junction (horizontal location), thereby and alleviate difference spectra response to longer wavelength in the solar spectrum.Therefore that compares is following, and this does not need in VMJ photovoltaic cell of enhanced spectrum response of longer wavelength in comprising vertical junction and providing solar spectrum of the present invention.
In particular aspects, (for example implement groove of the present invention, the V groove) result comes ameliorate body reorganization loss-(opposite with the conventional solar energy surface of using veining, this reduces reflection, or causes the light through reflection or refraction to become more close to knot) by reducing volume.In particular, described VMJ photovoltaic cell has represented at short wavelength and both better carrier electric current collection of long wavelength, wherein said short wavelength response is owing to the horizontal junction of eliminating top surface place high doped, and described long wavelength response is because the collection efficiency of the enhancing of vertical junction.) as another example, if substitute chamber of the present invention connected in star texture, with other texture (for example, pyramid, vaulted and similar convex configuration at random) be embodied as the part of VMJ photovoltaic cell, incident light becomes refraction in all directions so, thereby produces light absorption and therefore produce the efficient that reduces in p+ and n+ diffusion region.
According to correlation technique, can form the VMJ photovoltaic cell by piling up a plurality of battery units at first, wherein each battery itself can comprise a plurality of parallel Semiconductor substrate or the layer that is stacked.Each layer can be made of the impurity doped semiconductor material that forms PN junction, and comprises that further enhancing is towards " inner (built – in) " electrostatic dispersion field that the minority carrier of this kind PN junction moves.Subsequently, integrated a plurality of this type of battery unit is to form the VMJ photovoltaic cell.Next, on the surface of the reception light of described VMJ photovoltaic cell, can form chamber connected in star (for example, via the scribing saw), be approximately perpendicular to the direction of piling up the described battery unit that forms described VMJ photovoltaic cell comprising the plane of described cross-sectional configuration.Correspondingly, incident light can comprise described repetition cross-sectional configuration and be approximately perpendicular to refraction in the plane of the described direction of piling up described battery unit (for example, thus at given depth supply higher absorption.) in addition, can implement to have various rear surfaces and the side surface of reflectance coating in conjunction with various aspects of the present invention.
In related fields, groove surfaces of the present invention is further improved the carrier collection, reduces the loss of body weight group simultaneously.For instance, can be perpendicular to described p+nn+(or n+pp+) battery unit locatees described V groove, with the optical absorption path that increases longer wavelength in the solar spectrum and make light absorption can roughly be confined in the n type tagma of p+nn+ battery unit.In addition, this type of V groove can have the antireflecting coating that the incident light through applying to improve in the battery absorbs.
In related fields, the present invention loses via the body weight group that the veining on the optical receiving surface of vertically tying the VMJ photovoltaic cells alleviates in the described vertical VMJ of the knot photovoltaic cells more more.Described texture can be the form of chamber connected in star (as " V " shape cross-sectional configuration, " U " shape cross-sectional configuration etc.), is approximately perpendicular to the direction of the battery unit that piles up formation VMJ photovoltaic cell comprising the plane of this kind cross-sectional configuration.In one aspect, comprise that the plane of roughly repeating cross section (for example, transversal groove extend direction) thereon is approximately perpendicular to the described direction of piling up described battery unit.This arranges p+ and the n+ diffusing, doping district that promotes the refract light guiding is left the VMJ photovoltaic cell, produces required carrier simultaneously in the volume that reduces.Correspondingly, incident light can reflect comprising described cross-sectional configuration and be approximately perpendicular in the plane of the described direction of piling up described battery unit.
Should be appreciated that the veining of VMJ photovoltaic cell of the present invention is different with the prior art that is used for conventional silicon photovoltaic cell texture on the directed of PN junction and/or aspect mutual two of incident light.For instance, conventional silicon photovoltaic cell is usually through veining penetrating with prevention light, make more to absorb more longer wavelengths realizing better carrier electric current collection close to PN junction (horizontal location), thereby and alleviate difference spectra response to longer wavelength in the solar spectrum.Therefore that compares is following, and this does not need in VMJ photovoltaic cell of enhanced spectrum response of longer wavelength in comprising vertical junction and providing solar spectrum of the present invention.
In particular aspects, (for example implement groove of the present invention, the V groove) result comes ameliorate body reorganization loss-(opposite with the conventional solar energy surface of using veining, this reduces reflection, or causes the light through reflection or refraction to become more close to knot) by reducing volume.In particular, described VMJ photovoltaic cell has represented at short wavelength and both better carrier electric current collection of long wavelength, wherein said short wavelength response is owing to the horizontal junction of eliminating top surface place high doped, and described long wavelength response is because the collection efficiency of the enhancing of vertical junction.) as another example, if substitute chamber of the present invention connected in star texture, with other texture (for example, pyramid, vaulted and similar convex configuration at random) be embodied as the part of VMJ photovoltaic cell, incident light becomes refraction in all directions so, thereby produces light absorption and therefore produce the efficient that reduces in p+ and n+ diffusion region.
According to correlation technique, can form the VMJ photovoltaic cell by piling up a plurality of battery units at first, wherein each battery itself can comprise a plurality of parallel Semiconductor substrate or the layer that is stacked.Each layer can be made of the impurity doped semiconductor material that forms PN junction, and comprises that further enhancing is towards " inside " electrostatic dispersion field that the minority carrier of this kind PN junction moves.Subsequently, integrated a plurality of this type of battery unit is to form the VMJ photovoltaic cell.Next, on the surface of the reception light of described VMJ photovoltaic cell, can form chamber connected in star (for example, via the scribing saw), be approximately perpendicular to the direction of piling up the described battery unit that forms described VMJ photovoltaic cell comprising the plane of described cross-sectional configuration.Correspondingly, incident light can comprise described repetition cross-sectional configuration and be approximately perpendicular to refraction in the plane of the described direction of piling up described battery unit (for example, thus at given depth supply higher absorption.) in addition, can implement to have various rear surfaces and the side surface of reflectance coating in conjunction with various aspects of the present invention.
In related fields, groove surfaces of the present invention is further improved the carrier collection, reduces the loss of body weight group simultaneously.For instance, can be perpendicular to described p+nn+(or n+pp+) battery unit locatees described V groove, with the optical absorption path that increases longer wavelength in the solar spectrum and make light absorption can roughly be confined in the n type tagma of p+nn+ battery unit.In addition, this type of V groove can have the antireflecting coating that the incident light through applying to improve in the battery absorbs.
In another aspect, the present invention provides the barrier of ohm contact at one or more buffer strips of terminal layer place's supply of the vertical many knot VMJ photovoltaic cells of high voltage silicon simultaneously so that the described active layer of protection to be provided.The form that this type of buffer strip can be above the terminal layer that is stacked in described VMJ photovoltaic cell battery in addition and/or the non-active layer of below is arranged.Described VMJ photovoltaic cell itself can comprise a plurality of battery units, and wherein each battery unit adopts some active layers (for example, three) to form PN junction and " inside " electrostatic dispersion field (its minority carrier that strengthens towards described PN junction moves).
Therefore; (for example can protect the various active layers at any end place of being positioned at the VMJ photovoltaic cell part of its battery unit (and as); nn+ and/or p+n knot) avoids the stress of harmful form and/or strain (for example, the heat/mechanical pressure that can in described VMJ photovoltaic cell, bring out in the making of described VMJ photovoltaic cell and/or operating period, torsion, moment, shearing force etc.).In addition, can the material of low-resistivity ohm contact (metal or semiconductor) form described buffer strip via having roughly, make it under operating condition, in described photovoltaic cell, will can not contribute any essence series resistance loss.For instance, can form described buffer strip by the low-resistivity silicon wafer that adopts p-type to mix, make and when the described VMJ photovoltaic cell of manufacturing, (for example to use other p-type dopant, aluminium alloy) time, its will alleviate automatic doping risk (with adopt can produce the n type wafer of not expecting the pn knot and compare-when target be when producing roughly the low-resistivity ohm contact).Should be appreciated that, can be the part of arbitrary class photovoltaic cell (for example, solar cell or hot photovoltaic cell) with the invention process.In addition, also aspect of the present invention can be implemented in other class power conversion battery (for example, beta voltaic cell).
In related fields, described buffer strip can be the form at terminal layer lip-deep edge of battery unit, and it serves as the protection border of this kind active layer and further forms the framework of described VMJ photovoltaic cell so that carrying and transportation.Equally, by realizing the firm grip to described VMJ photovoltaic cell, this kind edge forms thing and also is convenient to the operation relevant with the anti-reflective coating (for example, can apply coating equably when keeping described battery (for example, by the mechanical grip to it) securely during operation).In addition, can be between depositional stage physically with described buffer strip (for example, be positioned the non-active layer at the end place of described VMJ photovoltaic cell) orientate contiguous other buffer strip as, thus and can under the situation of not destruction battery unit, easily remove and by mistake be penetrated into arbitrary on the contact surface downwards and do not expect the dielectric coating material.Can form described buffer strip by the silicon of low-resistivity and high doped roughly (for example, about 0.008 " thickness).This kind buffer strip can contact the conductive lead wire that VMJ photovoltaic cell another VMJ photovoltaic cell from photovoltaic battery array is cut apart or separated subsequently.
According to more on the one hand, described buffer strip can be sandwiched between the active layer of electric contact and described VMJ photovoltaic cell.In addition, this type of buffer strip can have approximate match in the thermal expansion character of the thermal expansion character of described active layer, thereby alleviates performance lower one's standard or status (for example, alleviating of the stress/strain that the time causes of welding or soft soldering lead-in wire) during fabrication.For instance, can adopt the thermal coefficient of expansion (3x10 that is matched with all effect battery units
– 6/ ℃) the low-resistivity silicon layer of high doped.Correspondingly, can provide roughly strong ohm contact to described effect battery unit, it alleviates in addition by welding/soft soldering and is caused and/or from the stress problem of the thermal coefficient of expansion that do not match in the slider material.Other example comprises the introducing metal level, for example tungsten (4.5x10
– 6/ ℃) or molybdenum (5.3x10
– 6/ ℃), it is because roughly being similar to activated silica (3x10
– 6/ ℃) thermal coefficient of expansion of p+nn+ battery unit and being selected.Can be under the situation of not introducing harmful stress to high intensity solar cell or photovoltaic cell welding or soft soldering be applied to low-resistivity silicon layer outer of described buffer strip or be applied to the metallization of the metal layer of electrodes that is fused to described effect battery unit, wherein this type of is outer as ohm contact; Rather than with other battery unit series connected battery elementary section.
Various aspects of the present invention can be embodied as a part that has for the wafer of the Miller indices (111) of the orientation of the crystal face that is associated of described buffer strip, it is regarded as mechanically stronger and etching is slower than (100) the crystal orientation silicon that is generally used for making effect VMJ photovoltaic cell unit.Correspondingly, the low-resistivity silicon layer can have the crystal orientation different with the crystal orientation of described effect battery unit, wherein by adopting this kind alternative orientations, provides the device of the mechanical strength/terminal contacts with improvement.In other words, compare with the terminal layer that non-effect (111) is directed, (100) the common etching in the edge of Ding Xiang battery unit comparatively fast and in fact finishing have the angle of the effect battery unit of this kind crystal orientation, have for welding or the more stabilizing arrangement structure of the more high mechanical properties of link contact in addition thereby produce.
Address relevant purpose on realizing, this paper describes some illustrative aspect in conjunction with following explanation and accompanying drawing.The variety of way that can put into practice is represented in these aspects, and described aspect is set is covered by herein for all.Other advantage and novel feature can become apparent when describing in detail below in conjunction with graphic consideration.
Description of drawings
Fig. 1 graphic extension according to an aspect of the present invention as the veining of a part of vertically tying the VMJ photovoltaic cells or the perspective schematic view of groove surfaces more.
Fig. 2 graphic extension is used for implementing the exemplary cross section of groove of the present invention.
Fig. 3 graphic extension is piled up in order to the exemplary of battery unit that formation has a VMJ photovoltaic cell of groove surfaces according to an aspect of the present invention.
Fig. 4 graphic extension partly forms the particular battery unit of VMJ photovoltaic cell according to an aspect of the present invention.
Fig. 5 graphic extension produces VMJ photovoltaic cell with groove surfaces according to an aspect of the present invention with the correlation technique of ameliorate body reorganization loss.
Fig. 6 graphic extension is the schematic block diagram of the layout of the buffer strip of the part of the vertical many knot VMJ photovoltaic cells of conduct according to an aspect of the present invention.
Fig. 7 graphic extension its array according to a particular aspect of the invention can form the particular aspects of the battery unit of VMJ photovoltaic cell.
The lip-deep edge that Fig. 8 graphic extension is the battery unit at the arbitrary end place that is positioned at the VMJ photovoltaic cell forms the exemplary cross section of the buffer strip of thing form.
The terminal layer place that Fig. 9 is illustrated in the vertical VMJ of the knot photovoltaic cells of high voltage silicon more adopts buffer strip so that the correlation technique of the barrier of protecting its active layer to be provided.
Figure 10 graphic extension can be used for the VMJ photovoltaic cell of electrolysis of the present invention.
Figure 11 graphic extension single battery unit, a plurality of described single batteries unit is formed for the VMJ photovoltaic cell of electrolysis of the present invention.
Figure 12 graphic extension has groove surfaces with the VMJ photovoltaic cell of the efficient of improving electrolysis process.
Figure 13 graphic extension is used for the exemplary grooveization on surface of the VMJ photovoltaic cell of electrolysis according to an aspect of the present invention.
Figure 14 presents the perspective view of embodiment that has the photovoltaic cell of texturizing surfaces according to aspect described herein.
Embodiment
Describe the present invention referring now to graphic, wherein in all are graphic, use identical Ref. No. to refer to components identical.For illustrative purposes, in the following description, a large amount of details have been enumerated in order to provide thorough understanding of the present invention.Yet, can be apparent, can not have to put into practice the present invention under the situation of these details.In other example, show well-known structure and device with the block diagram form, to promote to describe the present invention.
This explanation, appended claims or graphic in, term " or " set mean comprising property " or " and nonexcludability " or ".That is to say that " X adopts A or B " set any one that means in the arrangement of described comprising property naturally obviously found out unless otherwise prescribed or from the context.That is to say that if X adopts A, X adopts B, or X adopt A and B both, in above-mentioned example, all satisfy " X employing A or B " so under the situation of any one.In addition, used article in this specification and the accompanying drawing " (a) " reaches " one (an) " should be interpreted as meaning " one or more " usually, obviously refers to singulative unless otherwise prescribed or based on context.
In addition, the nomenclature with respect to as the impurity dopant material of the part of photovoltaic cell described herein for the doping donor impurity, is used interchangeably term " n type " and reaches " N-type ", and it is also like this that term " n+ type " reaches " N+ type ".For the doping acceptor impurity, term " p-type " reaches " P type " and also is used interchangeably, and term " p+ type " to reach " P+ type " also like this.For the purpose of clear, doping type also occurs with abbreviated form, and for example, the n type is marked as N, and the p+ type is indicated as P+ etc.Multilayer photovoltaic element or battery unit are marked as one group of letter, wherein the doping type of the described layer of each indication; For instance, p-type/n type knot is marked as PN, and p+ type/n type/n+ type knot is indicated by P+NN+; The mark that other roped party is closed is also observed this note.
Fig. 1 graphic extension is the perspective schematic view on groove 100 surfaces of the part of the vertical many knot VMJ photovoltaic cells 120 of conduct according to an aspect of the present invention.This veining 100 is arranged and is made refract light can be directed leaving p+ and n+ diffusing, doping district, produces required carrier simultaneously.Correspondingly, incident light can reflect in the plane 110 with normal vector n.This kind plane 110 is parallel to the PN junction plane of VMJ photovoltaic cell 120, and can comprise the cross-sectional configuration of groove 100.In addition, antireflecting coating can be applied to the surface of veining 100 to increase the incident light absorption in the described photovoltaic cell.In other words, the orientation on plane 110 is approximately perpendicular to stacked battery cells 111,113,115 direction.Should be appreciated that, also can contain other non-perpendicular orientation (for example, the crystal face that exposes with various angles) and all these type of aspects and be regarded as belonging in the scope of the present invention.
Fig. 2 graphic extension is used for the exemplary texture with the surface grooveization of described VMJ photovoltaic cell, and described VMJ photovoltaic cell receives light on described surface.This kind grooveization can be the form of chamber connected in star, for instance, as (for example have various angles, 0 °＜＜180 °) " V " shape cross-sectional configuration, " U " shape cross-sectional configuration etc., be approximately perpendicular to the direction of piling up the battery unit that forms described VMJ photovoltaic cell and/or the PN junction that is roughly parallel to described VMJ photovoltaic cell comprising the plane of described cross-sectional configuration.Should be appreciated that, the veining 210,220 of VMJ photovoltaic cell of the present invention, 230 the directed of PN junction and/or with incident light mutual on different with the prior art that is used for conventional silicon photovoltaic cell texture.For instance, conventional silicon photovoltaic cell is usually through veining penetrating with prevention light, make more to absorb more longer wavelengths realizing better carrier electric current collection close to PN junction (horizontal location), thereby and alleviate difference spectra response to longer wavelength in the solar spectrum.That compares is following, and this does not need in VMJ photovoltaic cell of enhanced spectrum response of longer wavelength in comprising vertical junction and providing solar spectrum of the present invention.
But, be used for (for example implementing groove of the present invention, the V groove) a aspect is to come ameliorate body reorganization loss-(opposite with the conventional solar energy surface of using veining, this reduces reflection, or causes the light through reflection or refraction to become more close to knot) by reducing volume.In particular, the VMJ photovoltaic cell has represented at short wavelength and both better carrier electric current collection of long wavelength, and wherein said short wavelength response is because the horizontal junction of elimination top surface place high doped and described long wavelength response are because the collection efficiency of the enhancing of vertical junction.) as another example, if substitute chamber of the present invention connected in star texture, with other texture (for example, pyramid, vaulted and similar convex configuration at random) be embodied as the part of VMJ photovoltaic cell, incident light becomes refraction in all directions so, thereby produces light absorption and therefore produce the efficient that reduces in p+ and n+ diffusion region.Should be appreciated that this type of " U " reaches " V " connected in star and also belonging in the scope of the present invention for exemplary and other configuration in nature.
Fig. 3 graphic extension can be implemented the battery unit 311,313 of groove texture, 317 layout in side 345 according to an aspect of the present invention.As explained before, the battery units 311,313 that VMJ photovoltaic cell 315 is engaged by a plurality of integral body itself, 317(1 are to k, and k is integer) form, wherein each battery unit itself is formed by the substrate that piles up or a layer (not shown).For instance, each battery unit 311 can comprise a plurality of parallel Semiconductor substrate that is stacked, and be made of the semi-conducting material that impurity mixes, the semi-conducting material that described impurity mixes forms PN junction and strengthens " inside " electrostatic dispersion field that the minority carrier towards this kind PN junction moves.Should be appreciated that, various N+ types and P type doped layer can be formed a part and this type of layout that thing is embodied as described battery unit and also belong in the scope of the present invention.
Correspondingly, the texture on the optical receiving surface 345 promotes that refract light is directed leaving p+ and n+ diffusing, doping district, produces required carrier simultaneously.Therefore, incident light can reflect comprising cross-sectional configuration and be approximately perpendicular in the plane of the described direction (for example, perpendicular to vector n) of piling up described battery unit.
The particular aspects of Fig. 4 graphic extension battery unit, its array can form the VMJ photovoltaic cell with veining grooveization of the present invention.Battery unit 400 is included in the layer 411,413,415 that is stacked in the layout of almost parallel.This type of layer 411,413,415 can further comprise the semi-conducting material that impurity mixes, and its middle level 413 is opposite conductivity type-to define PN junction at intersection point 412 places for a kind of conductivity type and layer 411.Equally, layer 415 can be the conductivity type identical with layer 413-in addition by roughly higher impurity concentration, strengthens the electrostatic dispersion field, inside that the minority carrier towards PN junction 412 moves thereby produce.This type of battery unit integral body can be bonded together to form the VMJ photovoltaic cell and according to the surface of various aspects of the present invention grooveization.
According to more on the one hand, for making described VMJ photovoltaic cell by a plurality of batteries 400, at first can be with identical PNN+(or NPP+) knot forms the degree of depth of about 3 to 10 μ m in the flat wafer of high resistivity (for example, being higher than 100ohm-cm) (having about 0.008 inch thickness) of N-type (or P type) silicon.Subsequently,, wherein flake aluminum is inserted between it, wherein the PNN+ of each wafer knot and crystal orientation can the equidirectional orientations with this type of PNN+ wafer stacking together.In addition, can adopt aluminium-silicon congruent melting alloy, or have approximate match in the metal of the hot coefficient of silicon, for example molybdenum or tungsten.Next, described silicon wafer and aluminium interface can be fused together, make and the sub-assembly that piles up can be bonded together.Also can be stacked in the form supply that the non-active layer of the terminal layer top of described VMJ photovoltaic cell and/or below arranges in addition and have the roughly buffer strip of low-resistivity; thereby implement the described active layer of protection is avoided the stress of harmful form and/or strain (for example, the heat/mechanical pressure that can bring out in the making of VMJ photovoltaic cell and/or operating period, torsion, moment, shearing force etc.) in described VMJ photovoltaic cell barrier.The surface grooveization of this kind battery can be lost with the ameliorate body reorganization then, described in detail as preamble.Should be appreciated that, also can adopt other material, for example germanium and titanium.Equally, also can adopt aluminium-silicon congruent melting alloy.
Fig. 5 graphic extension is with the correlation technique 500 of the surface grooveization of the reception light of VMJ photovoltaic cell.Although this paper is with described exemplary methods graphic extension and be described as the piece of a series of representative variety of events and/or action, the present invention is not limited by the illustrated order of this type of piece.For instance, according to the present invention, except the illustrated order of this paper, some actions or event can different order and/or are taken place simultaneously with other action or event.In addition, implement the method according to this invention and may not need all illustrated pieces, event or action.In addition, should be appreciated that, can method illustrated with this paper and that describe be combined enforcement according to exemplary methods of the present invention and other method, and also can the system of graphic extension or description and equipment are not combined enforcement with other.
At first, and at 510 places, formation described in detail has a plurality of battery units of PN junction as preamble.As explained before, each battery unit itself can comprise a plurality of parallel Semiconductor substrate that is stacked.Each layer can be made of the impurity doped semiconductor material that forms PN junction, and comprises that further enhancing is towards " inside " electrostatic dispersion field that the minority carrier of this kind PN junction moves.Subsequently, and at 520 places, integrated a plurality of these type of battery units wherein also can be embodied as buffer strip the protection (stress/strain that for example, brings out) to this type of battery thereon to form the VMJ photovoltaic cell during making.Next and at 530 places, on the surface of the reception light of described VMJ photovoltaic cell, can form chamber connected in star (for example, via the scribing saw), be approximately perpendicular to the direction of piling up the described battery unit that forms described VMJ photovoltaic cell comprising the plane of cross-sectional configuration.Subsequently and at 540 places, can reflect incident light comprising described cross-sectional configuration (and/or being parallel to described PN junction) and be approximately perpendicular in the plane of the direction of piling up described battery unit.
Fig. 6 graphic extension is the schematic block diagram of the layout of the buffer strip of the part of the vertical many knot VMJ photovoltaic cells of conduct according to an aspect of the present invention.The battery units 611 that VMJ photovoltaic cell 615 is engaged by a plurality of integral body itself, 617(1 are to n, and n is integer) form, wherein each battery unit itself is formed by the substrate that piles up or a layer (not shown).For instance, each battery unit 611,617 can comprise a plurality of parallel Semiconductor substrate that is stacked, and be made of the semi-conducting material that impurity mixes, the semi-conducting material that described impurity mixes forms PN junction and strengthens " inside " electrostatic dispersion field that the minority carrier towards this kind PN junction moves.Correspondingly; (for example can protect the various active layers at any end place of being positioned VMJ photovoltaic cell 615 part of its battery unit (and as); nn+ and/or p+n knot; or pp+ and/or pn+ knot) avoids the stress of harmful form and/or strain (for example, the heat/mechanical pressure that can in described VMJ photovoltaic cell, bring out in the making of VMJ photovoltaic cell and/or operating period, torsion, moment, shearing force etc.).
In addition, can form in the buffer strip 610,612 each via the material with ohm contact of low-resistivity (for example, having the arbitrary scope less than the upper limit of about 0.5ohm-cm) roughly, alleviate simultaneously and/or eliminate the automatic doping of not expecting.For instance, can (for example use other p-type dopant by the low resistivity wafers that adopts p-type to mix, aluminium alloy) form buffer strip 610,612, with the risk that alleviates automatic doping (with adopt can produce the n type wafer of not expecting the pn knot and compare-when expectation produces roughly the low-resistivity ohm contact).
The particular aspects of Fig. 7 graphic extension battery unit, its array can form the VMJ photovoltaic cell.Battery unit 700 is included in the layer 711,713,715 that is stacked in the layout of almost parallel.This type of layer 711,713,715 can further comprise the semi-conducting material that impurity mixes, and its middle level 713 is opposite conductivity type-to define PN junction at intersection point 712 places for a kind of conductivity type and layer 711.Equally, layer 715 can be the conductivity type identical with layer 713-in addition by roughly higher impurity concentration, strengthens the electrostatic dispersion field, inside that the minority carrier towards PN junction 712 moves thereby produce.This type of battery unit integral body can be bonded together to form the VMJ photovoltaic cell, wherein can locate buffer strip of the present invention with protect described VMJ photovoltaic cell and form its associated battery cells and/or the layer.
According to more on the one hand, for making described VMJ photovoltaic cell by a plurality of battery units 700, at first can be with identical PNN+(or NPP+) knot forms the degree of depth of about 3 to 10 μ m in the flat wafer of high resistivity (for example, being higher than 100ohm-cm) (having about 0.008 inch thickness) of N-type (or P type) silicon.Subsequently, with this type of PNN+ wafer stacking together, wherein thin aluminium lamination inserts between each wafer, and wherein the PNN+ of each wafer knot and crystal orientation can the equidirectional orientations.In addition, can adopt aluminium-silicon congruent melting alloy, or have approximate match in the metal of the hot coefficient of silicon, for example molybdenum or tungsten.Next, described silicon wafer and aluminium interface can be fused together, make and the sub-assembly that piles up can be bonded together.In addition, also can adopt aluminium-silicon congruent melting alloy.Should be appreciated that a part and this type of layout that various N+ types and P type doped layer can be embodied as described battery unit also belong in the scope of the present invention.
Also can be stacked in the form supply that the non-active layer of the terminal layer top of described VMJ photovoltaic cell and/or below arranges in addition and have the roughly buffer strip of low-resistivity; thereby implement the described active layer of protection is avoided the stress of harmful form and/or strain (for example, the heat/mechanical pressure that can bring out in the making of VMJ photovoltaic cell and/or operating period, torsion, moment, shearing force etc.) in described VMJ photovoltaic cell barrier.
Fig. 8 graphic extension is battery unit 830(840) terminal layer 831(841) lip-deep edge form thing 810(812) the exemplary cross section of the buffer strip of form, its part forms VMJ photovoltaic cell 800.This type of edge forms the protection border that thing 810,812 serves as the active layer of described battery unit; and further partly form the framework of VMJ photovoltaic cell 800 so that carrying and transportation (for example, the low-resistivity buffer strip of described VMJ photovoltaic cell and edge or terminal contacts).Equally, by realizing the firm grip to VMJ photovoltaic cell 800, described edge forms thing and also is convenient to the operation relevant with the anti-reflective coating (for example, can apply coating equably when keeping described battery (for example, by the mechanical grip to it) securely during operation).In addition, can be during depositing operation physically this type of edge be formed thing and orientate contiguous other limit as and form thing, wherein can by mistake be penetrated into arbitrary on the contact surface downwards and do not expect the dielectric coating material not destroying easily to remove under battery unit 830,840 the situation.The edge that represents buffer strip forms thing 810(812) can be by the silicon of roughly low-resistivity and high doped (for example, about 0.008 " thickness) form, wherein said edge forms thing can contact the conductive lead wire that VMJ photovoltaic cell another VMJ photovoltaic cell from photovoltaic battery array is cut apart subsequently.In addition, because the roughly low-resistivity of described buffer strip, do not require that described conductive lead wire has and the electrically contacting fully of described buffer strip.Therefore, it can be the part contact, and for example contact or series of points contact provides good electrical contact simultaneously again.Should be appreciated that Fig. 8 is exemplary in nature, and other version (for example, the buffer strip 810 on the surface of the arrival 800 of Xing Chenging wherein 810 joins active layer 841 to during fabrication) belongs to also in the scope of the present invention.For instance, 810 shape can represent with the part lead-in wire of metal layer on the buffer strip as previously described and contact.
Described conductive lead wire can be the form of electrode layer, its by form at substrate deposition first electric conducting material-and can comprise tungsten, silver, copper, titanium, chromium, cobalt, tantalum, germanium, gold, aluminium, magnesium, manganese, indium, iron, nickel, palladium, platinum, zinc, its alloy, indium tin oxide, other conduction and semiconductive metal oxide, nitride and silicon dioxide, polysilicon, through doped amorphous silicon and various metal composites alloy.In addition, electrode can adopt other through conduction or semiconductive polymer, oligomer or the monolithic of doping or undoped, for example PEDOT/PSS, polyaniline, polythiophene, polypyrrole, its derivative etc.In addition, because some metals can have the oxide skin(coating) that can influence the performance of VMJ photovoltaic cell nocuously formed thereon, so nonmetallic materials (for example, amorphous carbon) also can be used for electrode formation.Should be appreciated that the edge of Fig. 8 forms thing and also belonging in the scope of the present invention for other buffer strip configuration (for example, rectangle, circle, cross section) exemplary and that have with the surperficial contact range of described active layer in nature.
In addition, various aspects of the present invention can be embodied as a part that has for the wafer of the Miller indices (111) of the orientation of the crystal face that is associated of described buffer strip, it is regarded as mechanically stronger and etching is slower than (100) the crystal orientation silicon that is generally used for making effect VMJ photovoltaic cell unit.Correspondingly, the low-resistivity silicon layer can have the crystal orientation different with the crystal orientation of described effect battery unit, wherein by adopting this kind alternative orientations, provides the device of the mechanical strength/terminal contacts with improvement.In other words, compare with the terminal layer that non-effect (111) is directed, (100) the edge etching of Ding Xiang battery unit comparatively fast and in fact finishing have the angle of the effect battery unit of this kind crystal orientation, have for welding or the more stabilizing arrangement structure of the more high mechanical properties of link contact in addition thereby produce.
The terminal layer place that Fig. 9 is illustrated in the vertical VMJ of the knot photovoltaic cells of high voltage silicon more adopts buffer strip so that the correlation technique 900 of the barrier of protecting its active layer to be provided.Although this paper is with described exemplary methods graphic extension and be described as the piece of a series of representative variety of events and/or action, the present invention is not limited by the illustrated order of this type of piece.For instance, according to the present invention, except the illustrated order of this paper, some actions or event can different order and/or are taken place simultaneously with other action or event.In addition, implement the method according to this invention and may not need all illustrated pieces, event or action.In addition, should be appreciated that, can method illustrated with this paper and that describe be combined enforcement according to exemplary methods of the present invention and other method, and also can the system of graphic extension or description and equipment are not combined enforcement with other.At first, and at 910 places, formation described in detail has a plurality of battery units of PN junction as preamble.As explained before, each battery unit itself can comprise a plurality of parallel Semiconductor substrate that is stacked.Each layer can be made of the impurity doped semiconductor material that forms PN junction, and comprises that further enhancing is towards " inside " electrostatic dispersion field that the minority carrier of this kind PN junction moves.Subsequently and at 920 places, integrated a plurality of these type of battery units are to form the VMJ photovoltaic cell.Next and at 930 places, can implement to contact the buffer strip of the terminal layer of described VMJ photovoltaic cell, so that the barrier of its active layer of protection to be provided.The form that this type of buffer strip can be above the terminal layer that is stacked in described VMJ photovoltaic cell in addition and/or the non-active layer of below is arranged.Can described VMJ photovoltaic cell be embodied as the part of photovoltaic cell then at 940 places.
Figure 10 graphic extension can be used for VMJ photovoltaic cell according to an aspect of the present invention.The battery units 1511 that VMJ photovoltaic cell 1515 is engaged by a plurality of integral body itself, 1517(1 are to n, and n is integer) form, wherein each battery unit itself is formed by the substrate that piles up or a layer (not shown).For instance, each battery unit 1511,1517 can comprise a plurality of parallel Semiconductor substrate that is stacked, and be made of the semi-conducting material that impurity mixes, the semi-conducting material that described impurity mixes forms PN junction and strengthens " inside " electrostatic dispersion field that the minority carrier towards this kind PN junction moves.In addition; by implementing one or more buffer strips 1510,1512; (for example can protect the various active layers at any end place of being positioned at VMJ photovoltaic cell 1515 part of its battery unit (and as); nn+ and/or p+n knot) avoids the stress of harmful form and/or strain (for example, the heat/mechanical pressure that can in described VMJ photovoltaic cell, bring out in the making of VMJ photovoltaic cell and/or operating period, torsion, moment, shearing force etc.).Can form in this type of buffer strip 1510,1512 each via having the material of low-resistivity ohm contact (for example, having the arbitrary scope less than the upper limit of about 0.5ohm-cm) roughly, alleviate simultaneously and/or eliminate the automatic doping of not expecting.For instance, can (for example use other p-type dopant by the low resistivity wafers that adopts p-type to mix, aluminium alloy) form buffer strip 1510,1512, with the risk that alleviates automatic doping (with adopt can produce the n type wafer of not expecting the pn knot and compare-when expectation produces roughly the low-resistivity ohm contact).For instance, also can adopt catalyst material (for example, platinum, titanium etc.) at the terminal contacts place of described VMJ photovoltaic cell, to promote electrolysis procedure.）
The particular aspects of Figure 11 graphic extension battery unit 1600, its array can be formed for VMJ photovoltaic cell of the present invention.Battery unit 1600 is included in the layer 1611,1613,1615 that is stacked in the layout of almost parallel.This type of layer 1611,1613,1615 can further comprise the semi-conducting material that impurity mixes, and its middle level 1613 is opposite conductivity type-to define PN junction at intersection point 1612 places for a kind of conductivity type and layer 1611.Equally, layer 1615 can be the conductivity type identical with layer 1613-in addition by roughly higher impurity concentration, strengthens the electrostatic dispersion field, inside that the minority carrier towards PN junction 1612 moves thereby produce.This type of battery unit integral body can be bonded together to form the VMJ photovoltaic cell.
According to more on the one hand, for making the VMJ photovoltaic cell by a plurality of battery units 1600, at first can be with identical PNN+(or NPP+) knot forms the degree of depth of about 3 to 10 μ m inches in the flat wafer of high resistivity (for example, being higher than 100ohm-cm) (having about 0.008 inch thickness) of N-type (or P type) silicon.Subsequently, with this type of PNN+ wafer stacking together, wherein thin aluminium lamination inserts between each wafer, and wherein the PNN+ of each wafer knot and crystal orientation can the equidirectional orientations.In addition, can adopt aluminium-silicon congruent melting alloy, or also can adopt and have approximate match in the metal such as for example germanium and titanium etc. of the hot coefficient of silicon or metal such as molybdenum or tungsten for example.Next, described silicon wafer and aluminium alloy interface can be fused together, make the sub-assembly that piles up to be bonded together (for example, further comprising catalyst material).Should be appreciated that, also can adopt other material, for example germanium and titanium.Equally, also can adopt aluminium-silicon congruent melting alloy.Should be further appreciated that and to select electrolyte to make it can not influence the operation of VMJ photovoltaic cell nocuously, and/or cause the chemical reaction harmful to the VMJ photovoltaic cell.Should be appreciated that, various N+ types and P type doped layer can be formed a part and this type of layout that thing is embodied as described battery unit and also belong in the scope of the present invention.
Figure 12 graphic extension comprises the further aspect of the present invention be used to the VMJ photovoltaic cell with texturizing surfaces.Illustrate the vertically perspective schematic view of the groove surfaces 1700 of the part of many knot VMJ photovoltaic cells 1720 of conduct according to an aspect of the present invention.This veining 1700 is arranged and is made refract light can be directed leaving p+ and n+ diffusing, doping district, produces required carrier simultaneously.Correspondingly, incident light can reflect in the plane 1710 with normal vector n.This kind plane 1710 is parallel to the PN junction plane of VMJ photovoltaic cell 1720, and can comprise the cross-sectional configuration of groove 1700.In other words, the orientation on plane 1710 is approximately perpendicular to stacked battery cells 1711,1713,1715 direction.
Figure 13 graphic extension is used for the exemplary texture with the surface grooveization of described VMJ photovoltaic cell, and described surface receives light thereon to be used for electrolytical electrolysis.This kind grooveization can be the form of chamber connected in star, for instance, as (for example have various angle θ, 0 °＜θ＜180 °) " V " shape cross-sectional configuration, " U " shape cross-sectional configuration etc., plane comprising described cross-sectional configuration is approximately perpendicular to the direction of piling up the battery unit that forms described VMJ photovoltaic cell, and/or is roughly parallel to the PN junction of described VMJ photovoltaic cell.Should be appreciated that, the veining 1810,1820 of VMJ photovoltaic cell of the present invention, 1830 the directed of PN junction and/or with incident light mutual on different with the prior art that is used for conventional silicon photovoltaic cell texture.For instance, conventional silicon photovoltaic cell is usually through veining penetrating with prevention light, make more to absorb more longer wavelengths realizing better carrier electric current collection close to PN junction (horizontal location), thereby and alleviate difference spectra response to longer wavelength in the solar spectrum.That compares is following, and this does not need in VMJ photovoltaic cell of enhanced spectrum response of longer wavelength in comprising vertical junction and providing solar spectrum of the present invention.
But, (for example be used for the groove of enforcement Fig. 7, the V groove) a aspect is to come ameliorate body reorganization loss-(opposite with the conventional solar energy surface of using veining, this reduces reflection, or causes the light through reflection or refraction to become more close to knot) by reducing volume.In particular, the VMJ photovoltaic cell has represented at short wavelength and both better carrier electric current collection of long wavelength, and wherein said short wavelength response is because the horizontal junction of elimination top surface place high doped and described long wavelength response are because the collection efficiency of the enhancing of vertical junction.) as another example, if substitute chamber of the present invention connected in star texture, with other texture (for example, pyramid, vaulted and similar convex configuration at random) be embodied as the part of VMJ photovoltaic cell, incident light becomes refraction in all directions so, thereby produces light absorption and therefore produce the efficient that reduces in p+ and n+ diffusion region.In addition, can apply reflectance coating to the dorsal part of described VMJ photovoltaic cell with further enhancing light absorption.
In another aspect, the present invention relates to improve photovoltaic cell (for example, solar cell) and especially under the high-level radiation grade, can produce the roughly performance of the high intensity solar cell (for example, edge illumination or vertical junction structure) of high electric power output.Enumerate the various designs of PV element of the battery unit that is formed for making the VMJ photovoltaic cell in this article to reduce the reorganization loss of photoproduction carrier via patterned contact.
Described VMJ photovoltaic cell has the intrinsic theoretical upper limit efficient above 30% under 1000 sun optically focused intensity, therefore use experiment to understand the experience that reaches from computer simulation and modeling analysis, and further performance improvement is possible.Although be easy to use the analysis equation formula with good result to conventional sun concentrating solar battery modeling, but it is really not so for the VMJ photovoltaic cell situation with the edge illumination of high-intensity operation, because under high strength, even second-order effects can have materially affect to battery-operated efficient.Although in conjunction with solar cell graphic extension aspect of the present invention or feature, but can be at other photovoltaic cell (for example, the battery that hot photovoltaic cell or the lasing light emitter by photon excite) utilizes this type of aspect or feature and related advantages (for example, the reduction of the reorganization of photoproduction carrier loss) in.In addition, also aspect of the present invention can be implemented in other class power conversion battery (for example, beta voltaic cell).
The right physical property of the electronics that produces in the solar cell under the high strength-electric hole carrier is quite complicated, because many physical parameters play a role, include but not limited to: surperficial reorganization speed, carrier mobility and concentration, emitter (for example, diffusion) reverse saturation current, minority carrier life-span, band gap narrow down, in-building type electrostatic field and various recombination mechanism.Mobility reduces fast with the increase of carrier density, and lattice difficult to understand reorganization with as carrier density cube intensity increase fast.For this type of aspect being incorporated in the modeling of VMJ solar cell properties, computer simulation (for example, the two-dimensional digital computational analysis of photoproduction carrier transportation in the semiconductor) can provide with high-intensity operation or be used for the vertical junction battery unit of the operation under the high strength or the experience of the physical parameter of PV element.This analoglike provides analysis and design tool to understand the performance that may originate and improve the VMJ photovoltaic cell under the high strength of effectiveness of performance.Should be appreciated that, even although be easy to use the simple analysis equation with good result to conventional sun concentrating solar battery modeling, but the VMJ photovoltaic cell situation for the edge illumination of operating with high exposure intensity is really not so, because under high strength, even second-order effects also can have strong influence to battery-operated efficient.
Issue some given zone that the third contact of a total solar or lunar eclipse is given birth to the reorganization loss of carrier based on incorporating in the calculating simulation exposure VMJ photovoltaic cell unit of contact to the model of VMJ photovoltaic cell unit, contact that the Semiconductor Physics element arrays is arranged in high strength.At least some districts in this type of district present the complexity loss mechanism that depends on intensity.Calculating can be through improving the some districts to reduce the reorganization loss and to improve the performance of VMJ photovoltaic cell in simulation exposure PV element or the VMJ photovoltaic cell unit.Aspect of the present invention provides this type of improvement.
Series resistance has been regarded as the important source of the design problem of conventional concentrator solar cell.VMJ photovoltaic cell design proof is more than enough in this regard, even show that series resistance also is out of question under the intensity of 2500 sun optically focused.Yet, in some cases, can be advantageously exchange less simplicity of design with the increase of series resistance, with improve the photovoltaic collector with the efficient near the VMJ photovoltaic cell of 1000 sun optically focused operations.
Should be appreciated that, at under the higher-strength roughly (for example, the design of operation 2500 sun optically focused that the VMJ photovoltaic cell still can be operated efficiently) may need roughly harsher and expensive collector system engineering design aspect optics, structure, solar tracking and the thermal control, and can not any better overall performance of contribution or economic benefit.Therefore, the aspect of cited solar cell or feature and the technology that is associated that is used for its generation can improve the efficient performance of the high-strength V MJ photovoltaic cell of operating among the present invention in 1000 sun optically focused or higher scope.Efficient improves can make the VMJ solar cell or other solar cell cost that utilize aspect of the present invention more efficient and feasible, even it can relate to the potential increase of extra manufacturing and series resistance at the intensity greater than 1000 sun optically focused.Aspect described herein or feature can provide the compromise so that photovoltaic collector system of using solar cell, VMJ photovoltaic cell or utilizing aspect of the present invention in addition of enough engineering design provide low $/watt performance the time more feasible and cost is more efficient.
The real parameter (minority-carrier life-span, surperficial reorganization speed etc.) that use is handled greater than the good silicon under the intensity of 500 sun optically focused shows the following percentage reorganization loss of some given zone to the microcomputer modelling analysis of conventional VMJ photovoltaic cell unit design (the P+NN+ sheet that for example, has dark knot):
Therefore, this the analysis showed that its hard contact accounts for heavy doping P+ and the N+ diffused emitter district above half of all the reorganization losses in the battery unit that forms the VMJ solar cell, and the diffusion N+ emitter of optimization can be different from best diffusion P+ emitter (part is because ambulant difference) in design.The relative value that can lose at N+PP+ battery unit or P+NN+ battery unit (the having shallow P+N knot) reorganization of handover source in N+ and P+ district.On the one hand, the present invention is directed to the performance that the reorganization loss of reducing in the aforementioned diffusion region is improved the VMJ photovoltaic cell.
Open circuit voltage V by each battery unit knot under the high strength
Oc=0.8 volt, in conventional VMJ photovoltaic cell exploitation, successfully reach high minority-carrier life-span and low surperficial reorganization speed.V
OcElectric current and diffused emitter reverse saturation current (J by the daylight generation
o) determine, wherein be present in P+N in the battery unit of VMJ solar cell and NN+ and tie both and contribute for open circuit voltage.Become minimum J from the best of TV point
oUse J
o=1x10
– 13Acm
– 2, the low reverse saturation current of the high-quality in its representative diffusion knot is analyzed the diffusion depth that shows about 3 to 10 μ m for being used for the sufficient degree of depth that P+ and N+ spread both, even when considering the unlimited reorganization speed at ohmic metal contacts place.
Should note, even dark and progressive NN+ diffusion profiles will provide the electrostatic dispersion field, inside (at final collection) that the minority carrier that will strengthen towards the knot barrier moves and reduce reorganization in this district, but computer simulation discloses the enhancing of NN+ knot and become more ineffective under high strength, and this can cause the higher reorganization in the N+ as implied above district.
Figure 14 presents and has texturizing surfaces and by along normal direction in battery unit 2410
1To 2410
10The direction on plane pile up the perspective view of the example embodiments of the vertical many knot VMJ photovoltaic cells 2405 of veining that described battery unit forms; Each battery unit 2410 κ (κ=1,2 wherein ... 10) constituted by the PV element with patterned dielectric coating and hard contact, as described herein.Although one group of 10 battery unit of graphic extension in exemplary veining PV battery 2405 notice that veining VMJ photovoltaic cell can comprise M battery unit, wherein M is positive integer.Can be with texture VMJ photovoltaic cell (for example, 2410
κ) in battery unit be embodied in battery unit 2070 λ, 2180 λ, or 2350, or in any other battery unit of production as described herein.In photovoltaic cell 2405, texturizing surfaces 2412 is the V groove surfaces; Yet, can form groove or the chamber of other different shape, for example the U groove.Described texturizing surfaces is formed into because of processing has the battery unit of patterned metal as herein described contact or the monolithic of PV element piles up on the plane (qrs) that exposes or roughly be exposed to electromagnetic radiation; For example, referring to Figure 20 D.Incident light can reflect in the plane 2430 with normal vector n2432.This kind plane 2430 parallel battery units 2410 that are coated with patterned dielectric substance thereon
κThe surface, and can comprise that the cross-sectional configuration-plane 2430 of groove 2415 is approximately perpendicular to the direction of stacked battery cells 2410 κ.The veining on the surface that the monolithic of battery unit 2410 κ piles up (it causes texturizing surfaces 2412) makes refract light can be directed leaving P+ and N+ diffusing, doping district and does not hinder the photoproduction of carrier, thereby the battery unit that will form veining photovoltaic cell 2405 is effectively made thinlyyer, and as the indicated reduction reorganization of preamble loss.In addition, antireflecting coating can be applied to texturizing surfaces 2410 absorbs with the incident light that increases in the described battery.
Content mentioned above comprises the example of the system and method that advantage of the present invention is provided.Certainly, can not describe each combination that can conceive of each assembly or method for describing purpose of the present invention, but those skilled in the art will appreciate that the subject matter of asking can have many other combinations and arrangement.In addition, with regard to this detailed description, claims, annex and graphic in used term " comprise (includes) ", " having (has) ", " having (possesses) " etc., the mode that comprises of this type of term is set be similar to term " comprise (comprising) " when in claims, being used as adversative " comprising (comprising) " explained like that.
Claims (20)
1. photovoltaic cell is characterized in that comprising:
Vertical many knot VMJ photovoltaic cells, it comprises a plurality of whole battery unit that engages that piles up along stacking direction; And
The texturizing surfaces that is used for light-receiving of described VMJ photovoltaic cell, described texturizing surfaces are used for alleviating the body weight group loss of described VMJ photovoltaic cell.
2. photovoltaic cell according to claim 1 is characterized in that described stacking direction is approximately perpendicular to transversal described texturizing surfaces to produce the plane of the cross sectional pattern that roughly repeats.
3. photovoltaic cell according to claim 2, it is characterized in that the described cross sectional pattern that roughly repeats the plane its formed by the chamber connected in star.
4. photovoltaic cell according to claim 3 is characterized in that described chamber connected in star comprises V-arrangement cross-sectional configuration or U-shaped cross-section configuration at least.
5. photovoltaic cell according to claim 3 is characterized in that described each photovoltaic cell itself comprises a plurality of parallel Semiconductor substrate or the layer that is stacked.
6. photovoltaic cell according to claim 5 is characterized in that described each substrate or layer are made of the impurity doped semiconductor material that forms PN junction.
7. photovoltaic cell according to claim 6 is characterized in that described substrate comprises that further promotion is towards " Inner portion " electrostatic dispersion field that the minority carrier of described PN junction moves.
8. photovoltaic cell according to claim 7 is characterized in that described substrate has various rear surfaces and the side surface of reflectance coating.
9. photovoltaic cell according to claim 4 is characterized in that described V-arrangement cross-sectional configuration roughly is confined in the tagma of p+nn+ battery unit to increase the optical absorption path of longer wavelength in the solar spectrum.
10. photovoltaic cell according to claim 9; it is characterized in that the form supply that the non-active layer of the described terminal layer top that is stacked in described VMJ photovoltaic cell and/or below is arranged has the roughly buffer strip of low-resistivity, thereby implement stress and/or strain that the protective effect layer is avoided harmful form.
11. a photovoltaic cell manufacture method is characterized in that comprising:
Integrally engage a plurality of active layers to form the VMJ photovoltaic cell; And
Alleviate bulk diffusion in the described VMJ photovoltaic cell via the texturizing surfaces of the reception incident light of described VMJ photovoltaic cell.
12. photovoltaic cell manufacture method according to claim 11 is characterized in that further comprising described incident light is reflected in the plane of the PN junction that is parallel to described VMJ photovoltaic cell.
13. photovoltaic cell manufacture method according to claim 11 is characterized in that further promoting refract light is guided p+ and the n+ diffusing, doping district of leaving the VMJ photovoltaic cell.
14. photovoltaic cell manufacture method according to claim 11 is characterized in that further comprising described incident light is reflected in the plane of the PN junction that is parallel to described VMJ photovoltaic cell.
15. photovoltaic cell manufacture method according to claim 11 is characterized in that integrally engaging a plurality of active layers and further comprises the photovoltaic cell unit that is stacked.
16. photovoltaic cell manufacture method according to claim 15 is characterized in that silicon wafer and aluminium interface are fused together to form the VMJ photovoltaic cell.
17. photovoltaic cell manufacture method according to claim 15 is characterized in that further comprising that each active layer can be made of the impurity doped semiconductor material that forms PN junction.
18. photovoltaic cell manufacture method according to claim 15 is characterized in that further comprising chamber connected in star Zuo Wei Pattern physics and chemistry surface.
19. photovoltaic cell manufacture method according to claim 15 is characterized in that further comprising above the terminal layer that is stacked in described VMJ photovoltaic cell and/or the form supply of the non-active layer layout of below has the roughly buffer strip of low-resistivity.
20. a photovoltaic cell is characterized in that comprising:
Be used for to strengthen the member to the spectral response of wavelength of photovoltaic cell; And
Member for the body weight group loss that alleviates described photovoltaic cell.
Applications Claiming Priority (16)
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| US8893608P | 2008-08-14 | 2008-08-14 | |
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| US8938908P | 2008-08-15 | 2008-08-15 | |
| US61/089,389 | 2008-08-15 | ||
| US9253108P | 2008-08-28 | 2008-08-28 | |
| US61/092,531 | 2008-08-28 | ||
| US12/535,952 | 2009-08-05 | ||
| US12/535,952 US20100037937A1 (en) | 2008-08-15 | 2009-08-05 | Photovoltaic cell with patterned contacts |
| US12/536,992 US8293079B2 (en) | 2008-08-28 | 2009-08-06 | Electrolysis via vertical multi-junction photovoltaic cell |
| US12/536,987 | 2009-08-06 | ||
| US12/536,982 US20100037943A1 (en) | 2008-08-14 | 2009-08-06 | Vertical multijunction cell with textured surface |
| US12/536.992 | 2009-08-06 | ||
| US12/536,987 US8106293B2 (en) | 2008-08-14 | 2009-08-06 | Photovoltaic cell with buffer zone |
| US12/536,982 | 2009-08-06 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801392214A Division CN102171840A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
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| CN103337547A true CN103337547A (en) | 2013-10-02 |
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| CN201310219468.5A Expired - Fee Related CN103354247B (en) | 2008-08-14 | 2009-08-12 | Electrolysis system and the method making electrolyte be electrolysed |
| CN2013102194702A Pending CN103337547A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
| CN201310219215.8A Expired - Fee Related CN103337546B (en) | 2008-08-14 | 2009-08-12 | There is photovoltaic cell and the related application of treated surface |
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| CN2009801392214A Pending CN102171840A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
| CN201310219468.5A Expired - Fee Related CN103354247B (en) | 2008-08-14 | 2009-08-12 | Electrolysis system and the method making electrolyte be electrolysed |
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| CN201310219215.8A Expired - Fee Related CN103337546B (en) | 2008-08-14 | 2009-08-12 | There is photovoltaic cell and the related application of treated surface |
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| EP (1) | EP2327107A1 (en) |
| JP (1) | JP2012500474A (en) |
| CN (4) | CN102171840A (en) |
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| TW (1) | TWI535042B (en) |
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| CN103165742B (en) * | 2011-12-16 | 2016-06-08 | 清华大学 | The preparation method of solar cell |
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Also Published As
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| RU2012141985A (en) | 2014-05-10 |
| MX2011001738A (en) | 2011-08-12 |
| CA2820184A1 (en) | 2010-02-18 |
| CN103354247A (en) | 2013-10-16 |
| IL211205A0 (en) | 2011-04-28 |
| EP2327107A1 (en) | 2011-06-01 |
| BRPI0917838A2 (en) | 2017-02-14 |
| JP2012500474A (en) | 2012-01-05 |
| CA2733976A1 (en) | 2010-02-18 |
| CN103337546B (en) | 2017-03-01 |
| AU2009281960A1 (en) | 2010-02-18 |
| CA2733976C (en) | 2015-12-22 |
| RU2011109164A (en) | 2012-09-20 |
| TW201013951A (en) | 2010-04-01 |
| TWI535042B (en) | 2016-05-21 |
| CN103354247B (en) | 2016-10-05 |
| CN102171840A (en) | 2011-08-31 |
| WO2010019685A1 (en) | 2010-02-18 |
| CN103337546A (en) | 2013-10-02 |
| RU2472251C2 (en) | 2013-01-10 |
| WO2010019685A4 (en) | 2010-05-06 |
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