CN102171840A - Photovoltaic cells with processed surfaces and related applications - Google Patents
Photovoltaic cells with processed surfaces and related applications Download PDFInfo
- Publication number
- CN102171840A CN102171840A CN2009801392214A CN200980139221A CN102171840A CN 102171840 A CN102171840 A CN 102171840A CN 2009801392214 A CN2009801392214 A CN 2009801392214A CN 200980139221 A CN200980139221 A CN 200980139221A CN 102171840 A CN102171840 A CN 102171840A
- Authority
- CN
- China
- Prior art keywords
- vmj
- photovoltaic
- photovoltaic cell
- battery
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims abstract description 98
- 229910052751 metal Inorganic materials 0.000 claims abstract description 51
- 239000002184 metal Substances 0.000 claims abstract description 51
- 238000004519 manufacturing process Methods 0.000 claims abstract description 22
- 238000000059 patterning Methods 0.000 claims abstract description 21
- 230000009467 reduction Effects 0.000 claims abstract description 18
- 239000003989 dielectric material Substances 0.000 claims abstract description 12
- 238000000576 coating method Methods 0.000 claims description 121
- 239000011248 coating agent Substances 0.000 claims description 120
- 239000004065 semiconductor Substances 0.000 claims description 87
- 239000000463 material Substances 0.000 claims description 65
- 238000005868 electrolysis reaction Methods 0.000 claims description 64
- 229910052710 silicon Inorganic materials 0.000 claims description 56
- 230000008521 reorganization Effects 0.000 claims description 55
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 51
- 239000010703 silicon Substances 0.000 claims description 51
- 239000013078 crystal Substances 0.000 claims description 44
- 238000009792 diffusion process Methods 0.000 claims description 41
- 230000009471 action Effects 0.000 claims description 38
- 239000000126 substance Substances 0.000 claims description 29
- 239000003792 electrolyte Substances 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 19
- 230000004044 response Effects 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 239000006185 dispersion Substances 0.000 claims description 16
- 230000005855 radiation Effects 0.000 claims description 14
- 230000033228 biological regulation Effects 0.000 claims description 13
- 230000007246 mechanism Effects 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 13
- 230000008878 coupling Effects 0.000 claims description 10
- 238000010168 coupling process Methods 0.000 claims description 10
- 238000005859 coupling reaction Methods 0.000 claims description 10
- 238000000354 decomposition reaction Methods 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- 230000037396 body weight Effects 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 7
- 238000010008 shearing Methods 0.000 claims description 7
- 238000005457 optimization Methods 0.000 claims description 6
- 230000001427 coherent effect Effects 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- 230000003595 spectral effect Effects 0.000 claims description 3
- 238000005728 strengthening Methods 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 13
- 230000008569 process Effects 0.000 abstract description 11
- 230000001965 increasing effect Effects 0.000 abstract description 8
- 230000006798 recombination Effects 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 4
- 239000000969 carrier Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 155
- 235000012431 wafers Nutrition 0.000 description 35
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 27
- 238000005516 engineering process Methods 0.000 description 26
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 24
- 229910052739 hydrogen Inorganic materials 0.000 description 24
- 239000001257 hydrogen Substances 0.000 description 24
- 238000013461 design Methods 0.000 description 22
- 238000010586 diagram Methods 0.000 description 22
- 238000001228 spectrum Methods 0.000 description 22
- 239000012535 impurity Substances 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 20
- 150000001875 compounds Chemical class 0.000 description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 17
- 239000001301 oxygen Substances 0.000 description 17
- 238000006722 reduction reaction Methods 0.000 description 17
- 239000003054 catalyst Substances 0.000 description 16
- 230000002708 enhancing effect Effects 0.000 description 15
- 238000001465 metallisation Methods 0.000 description 14
- 239000002019 doping agent Substances 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 11
- 229910052732 germanium Inorganic materials 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 238000013459 approach Methods 0.000 description 10
- 238000005530 etching Methods 0.000 description 10
- 230000031700 light absorption Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 238000011161 development Methods 0.000 description 8
- 230000018109 developmental process Effects 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- 239000000975 dye Substances 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 239000008151 electrolyte solution Substances 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 229910000673 Indium arsenide Inorganic materials 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- 150000001768 cations Chemical class 0.000 description 5
- 230000004927 fusion Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229910052750 molybdenum Inorganic materials 0.000 description 5
- 239000011733 molybdenum Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 150000001450 anions Chemical class 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005094 computer simulation Methods 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 3
- 230000001976 improved effect Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- 238000013082 photovoltaic technology Methods 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000000441 X-ray spectroscopy Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- -1 (for example Substances 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 101000911390 Homo sapiens Coagulation factor VIII Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010205 computational analysis Methods 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 102000057593 human F8 Human genes 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005510 radiation hardening Methods 0.000 description 1
- 230000036647 reaction Effects 0.000 description 1
- 229940047431 recombinate Drugs 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Abstract
Photovoltaic cells and processes that mitigate recombination losses of photogenerated carriers are provided. To reduce recombination losses, diffuse doping layers in active photovoltaic (PV) elements are coated with patterns of dielectric material(s) that reduce contact between metal contacts and the active PV element. Various patterns can be utilized, and one or more surfaces of the PV element can be coated with one or more dielectrics. Vertical Multi-Junction photovoltaic cells can be produced with patterned PV elements, or unit cells. While patterned PV elements can increase series resistance of VMJ photovoltaic cells, and patterning one or more surfaces in the PV element can add complexity to a process utilized to produce VMJ photovoltaic cells, reduction of carrier losses at diffuse doping layers in a PV element increases efficiency of photovoltaic cells, and thus provide with PV operational advantages that outweigh increased manufacturing complexity. A system to fabricate the photovoltaic cells is provided.
Description
The related application cross reference
The request of the application's case is to the rights and interests of following application case: on August 15th, 2008 file an application and title for " solar cell (SOLAR CELL WITH PATTERNED CONTACTS) " with patterned contact the 61/089th, No. 389 U.S. Provisional Application cases, its request is for filing an application on August 5th, 2009 and title is the priority of the 12/535th, No. 952 U.S. patent application case of " photovoltaic cell (PHOTOVOLTAIC CELL WITH PATTERNED CONTACTS) with patterned contact "; On August 6th, 2009 file an application and title for " vertical multijunction cell (VERTICAL MULTI JUNCTION CELL WITH TEXTURED SURFACE) " with texturizing surfaces the 12/536th, No. 982 U.S. patent application case, its request is for filing an application on August 14th, 2008 and title is the priority of the 61/088th, No. 921 U.S. Provisional Application case of " the vertical multijunction cell (VERTICAL MULTIJUNCTION CELL WITH TEXTURED SURFACE) with texturizing surfaces "; On August 6th, 2009 file an application and title for " photovoltaic cell (PHOTOVOLTAIC CELL WITH BUFFER ZONE) " with buffer strip the 12/536th, No. 987 U.S. patent application case, its request is for filing an application on August 14th, 2008 and title is the priority of the 61/088th, No. 936 U.S. Provisional Application case of " solar cell (SOLAR CELL WITH BUFFER ZONE) with buffer strip "; And on August 6th, 2009 file an application and title for " via the electrolysis (ELECTROLYSIS VIA VERTICAL MULTI-JUNCTION PHOTOVOLTAIC CELL) of vertical multi-junction photovoltaic battery " the 12/536th, No. 992 U.S. patent application case, its request is for filing an application on August 28th, 2008 and title is the priority of the 61/092nd, No. 531 U.S. Provisional Application case of " via the electrolysis (ELECTROLYSIS VIA VERTICAL MULTI-JUNCTION SOLAR CELL) of vertical multijunction solar cell ".Above the full text of each application case of reference is incorporated herein with way of reference.
Background technology
The limited supply of fossil energy and its demand of increase and the global environment that is associated destroyed ordered about the whole world and make great efforts to make and utilize the energy and correlation technique diversification.A kind of this type of resource is a solar energy, and it adopts photovoltaic (PV) technology that light is converted to.In addition, solar energy can be used for heat generation (for example, in solar furnace, steam generator etc.).Heliotechnics is generally implemented in a series of PV batteries or solar cell or its panel, and it receives daylight and daylight is converted to electricity, and electricity can be passed in the power network subsequently.Reach major progress in the design of solar panel and in producing, it increases efficient effectively and reduces its manufacturing cost simultaneously.Along with developing the higher solar cell of efficient, the size of battery reduces, and reduces gradually and the actual property increase of the competitive rechargeable energy of tool of the non-renewable source of height requirement thereby cause adopting solar panel to provide substituting.For this reason, can dispose as solar energy collecting systems such as solar collector with solar energy converting for the electricity that can be passed to power network and also gather in the crops heat.Except that exploitation solar collector technology, also begun to utilize solar collector to develop solar cell.
The high intensity solar cell technology that is called vertical many knot (VMJ) solar cells is the array that is connected in series that edge illumination and the integral body of holding the small-sized vertical junction element cell with electric contact engage.Described unique VMJ battery design can provide height to force down the series resistance output characteristic inherently, thereby makes it be suitable for efficient performance in the high strength photovoltaic collector ideally.Another key feature of VMJ battery is its simplicity of design that causes low manufacturing cost.
Can be according to the effectiveness of the performance data proof VMJ that obtains on the experimental VMJ battery that in the scope of 100 to 2500 sun optically focused intensity, has 40 knots that are connected in series, wherein output power density surpasses 400,000 watts/m under 25 volts
2, its efficient is near 20%.Should be appreciated that the above-mentioned performance in the VMJ solar cell realizes by low manufacturing cost and the low complexity of making.Believe that this type of aspect is to make that the photovoltaic collector system is the required boost motor of the more efficient and feasible needed practical technical performance of cost and business efficiency significantly solving global energy problem.In addition, any increase of battery efficiency (for example, exporting more watts) can directly reduce collector system size (for example, the lower cost that is associated with bill of materials), thus produce low $/watt the photovoltaic electric power cost.
It should be noted that lower/watt cost adopts with solar battery technology in fact and market penetration is relevant, because global energy requirement positive stabilization increases (not only in emerging nation but also in developed country), traditional fossil fuel cost just progressively raises simultaneously.In addition, there is concern to the extensive increase of all associated problem (for example, environmental pollution, global warming and the national security that links together with dependence and economic dangerous) to external supply of fuel.These environment, economy and the safety factor relevant with the public awareness that increases just ordered about finding the great interest of cost-effective more and environmentally friendly rechargeable energy solution.In all available regenerative resources, solar energy has the roughly maximum potential that satisfies the demands in efficient and lasting mode.In fact, the cycle of the earth per a few minutes receives the energy of the daylight form that can Duo from the energy of all other resource consumptions roughly than human a year and a day.
Even photovoltaic electric power is considered as desirable rechargeable energy technology widely, cost can be the major obstacle of employing and market penetration but it is associated.Before obtaining the market share and adopting, need become than conventional power source (comprise well and develop, be used for the consumer and the coal-fired electric power of cost-effective roughly) tool cost competitiveness based on the electric power of photovoltaic.In addition, the availability of low-cost electric power is regarded as essence in all global economy bodies; The terawatt (TW) (for example, thousands of 1,000,000,000 watts) that therefore can need photovoltaic power system.Market survey shows that base cost that the photovoltaic power system installed must drop to watt could not have under the situation of subsidy and deserve to be called tool cost competitiveness in big effectiveness sizable application.Surpass $6/ watt because institute's photovoltaic system cost of installing is current, so still need the improvement of essence cost.
In the past between decades, attempt reaching low $/watt performance be the primary goals of most researchs and exploitation in the photovoltaic technology.Although described industry cost multi-million dollar is pursued various technology (target is to make photovoltaic energy cost-effective more), existing photovoltaic industry still needs quite big subsidy to come supports sales, and this can be the index of the unfavorable situation of market development and industry development.
Current, the photovoltaic market of silicon solar cell (roughly the same when its maintenance and the initial discovery of the sixties in 20th century and development) domination～93%.The existing photovoltaic industry of trying hard to reduce cost depends on the availability of low-cost waste material level semiconductor silicon deeply and makes conventional solar cell.It should be noted that this kind tailing level silicon (often being called solar energy level silicon) mainly is the defective material from the semiconductor device manufacturer refusal of the first class silicon wafer of the remaining ingot casting head of wafer manufacture and the tail and the quality of having relatively high expectations.Although the photovoltaic sales volume increases fast, (wherein 2007 annual productions are estimated as 3.8 ten hundred million watts (GW), and sales volume is subjected to the shortage of solar energy level silicon and the obstruction of higher price now in the past decade annual growth～40%.Although first class silicon can be used, it is not regarded as option, because it makes manufacturing cost further increase several times.
For the conventional solar cell of typical case, surpassing half manufacturing cost is the original polycrystalline silicon semiconductor that is used to produce the wafer that is used for solar cell.Therefore, the solar cell of typical 14% efficient is rated for 0.014W/cm
2And before any extra manufacturing, have and be higher than watt (or
2) the silicon wafer cost.Therefore, existing photovoltaic industry must propose and solve and only begin the fact that the silicon materials cost surpasses the benchmark price effectiveness needs of large-scale application.The aspect produces on the area basis to surpass $100/cm as a comparison
2The semiconductor maker of the microprocessor chip of selling can bear and the cost that utilizes the first class silicon wafer to be associated.
The shortage of solar energy level silicon and photovoltaic industry can not reach important base cost together with exploitation be used for novelty that space uses more the appearance of high-efficiency three-joint solar cell produce a large amount of interest recently again to the photovoltaic collector.The obvious advantage of photovoltaic collector is, owing to use large tracts of land not expensive material (glass-mirror reflector or plastic lens) daylight is gathered in the implicit costs benefit that produces on the much smaller expensive solar cell of area, thereby the use inexpensive materials replaces expensive material.The photovoltaic collector that is designed for 1000 sun optically focused intensity can need expensive semiconductor silicon significantly to reduce～99.9%, and the expensive semiconductor silicon of the current needed same amount of conventional solar cell that this VMJ battery that means 1000MW uses 1MW is possible.Pragmatism ground, this is regarded as relaxing the practical methods of arbitrary silicon shortage problem.
Quite a lot of work majority of solar collector is focused on exploitation be used for high-intensity silicon concentrator solar cell design; Though done a large amount of fruitful developments during the energy crisis seventies of 20th century, its result showed the golden mean of the Confucian school and can not be satisfactory on cost benefit at that time.Carried out being the research and the exploitation of target at first with the silion cell that is used for the collector system of the intensity operation of 500 sun optically focused; Yet, when in the series resistance problem of attempting overcoming in the solar cell design of studying, run into the described at need target of unsolved exploitation and be reduced to 250 sun optically focused.For instance, the loss of the high series resistance in the concentrator solar cell once was regarded as conventional VMJ solar battery technology really and had proposed and settled subject matter.It should be noted that the quite most of solar cell at the collector technological development manufactures suitable complexity and costliness, it covers step by 6 or 7 high-temperature step (＞1000 ℃) and 6 or 7 photoetching.This complexity is attempted owing to minimizing the design of basically the maximum intensity performance constraint of the preferred design in these designs being lost for the series resistance that is not higher than 250 sun optically focused.This kind complexity and the cost that is associated hinder the essence development of the collector technology and the solar battery technology that is associated, and promote the development as substitute technologies such as thin film solar cell technologies.
Vertical many knot (VMJ) solar battery technologies roughly are different from conventional concentrator solar cell.Described VMJ solar battery technology provides at least two advantages with respect to other technology: it does not need photoetching (1), and (2) can adopt greater than the single High temperature diffusion step under 1000 ℃ the temperature and form two knots.Therefore, low manufacturing cost is natural.In addition, can high-intensity operation VMJ solar cell; For example with 2500 sun optically focused operations.From then on it is apparent to plant operation, and series resistance also is out of question in the VMJ battery design; Even when intensity is higher than the order of magnitude of conventional general knowledge, also be out of question, even if this is infeasible economically.In addition, the current density of the VMJ element cell under 2500 sun optically focused is usually near 70A/cm
2, this is the radiation levels that can roughly be harmful to the most solar cells based on other technology.
As mentioned above, mainly be because the development that three-joint solar cell is made to V material (comprising gallium (Ga), phosphorus (P), arsenide (As), indium (In) and germanium (Ge)) by III again to the interest of photovoltaic collector.Three junction batteries can use 20 to 30 the series connection different semiconductors of layerings on germanium wafer: grow in metal organic chemical vapor deposition (MOCVD) reactor through doping GaInP
2And the GaAs layer, wherein the semiconductor of each type will have and cause it to absorb the characteristic band-gap energy of daylight most effectively with a certain color.Described semiconductor layer is through selecting meticulously absorbing near whole solar spectrum, thereby from daylight generating as much as possible.These many knot devices are solar cells the most efficiently up to the present, and it is issued to the high record of 40.7% efficient at appropriate solar energy collecting and laboratory condition.But because it manufactures costliness, so it need be applied in the photovoltaic collector.
Yet, III is increased just fast to the demand and the cost thereof of V solar cell material.As an example, in 12 months (12/2006 to 12/2007), the cost of pure gallium from about $350/Kg Zeng Jiadao $680/kg and germanium price roughly Zeng Jiadao $1000 to $1200/Kg.Indium at price price $94/Kg in 2002 was increased to Jie Jin $1000/Kg in 2007.In addition, estimate the demand of indium is continued to increase to the extensive manufacturing of film CIGS (CuInGaSe) solar cell beginning in 2007 along with some new companies.In addition, indium is the rare element that is widely used in the transparent electropaining layer of the indium tin oxide form that is formed for LCD and massive plate monitor.Practically, as if these materials are not to solve main global energy problem to provide terawatt (TW) the low-cost needed feasible long-term photovoltaic of electric power (PV) solution.
Although area is 0.26685cm
2III can produce power (or about 10W/cm of 2.6 watts to the V semiconductor solar cell
2), and estimated that this kind technology can finally produce electricity with 8 to 10 minutes/kWh, but roughly be similar to price from the electricity in conventional source, can need further to analyze to support this kind estimation.Yet the semi-conducting material that VMJ solar cell use cost is minimum is manufactured on by low cost and shows under the intensity of 2500 sun optically focused and surpass 40W/cm
2Power output.(this power output surpasses 400,000W/m
2) except that complicated PV technology, keep roughly ascendancy at photovoltaic element and in using based on the solar battery technology of Si based on advanced material.In addition, if the whole world needs to occur, silicon is the unique semi-conducting material that can supply the existing industry of having of terawatt (TW) photovoltaic electric power basis in the foreknowable future of extensively whole world application.
Summary of the invention
Hereinafter present and simplify summary so that the basic comprehension to aspects more described herein to be provided.This summary is not an exhaustive overview, the yet unvested scope of discerning key/critical element or portraying various aspects described herein.Its sole purpose is to present the preorder that is described in more detail that some notions are used as presenting after a while in simplified form.
The invention provides the photovoltaic cell of based semiconductor and alleviate the technology of the reorganization loss of photoproduction carrier.On the one hand, be to reduce the reorganization loss, apply diffusing, doping layer in the described PV of the acting on element with reducing hard contact and the dielectric substance pattern that contacts between the effect photovoltaic element.Can utilize various patterns, and available one or more dielectrics apply one or more surfaces of described PV element.Can produce vertical many knot (VMJ) solar cells by patterned PV element or element cell.Patterned PV element can increase the series resistance of VMJ solar cell, and the technology interpolation complexity that is used to produce the VMJ solar cell can be given in one or more surfaces in the described PV element of patterning; In addition, the carrier loss at reduction diffusing, doping layer place can increase the efficient of solar cell and therefore the PV service advantages that surpass the manufacturing complexity that increases are provided.The system of the making of the PV battery of realizing based semiconductor also is provided.
Can in arbitrary class photovoltaic cell (for example, the battery that solar cell, hot photovoltaic cell or the lasing light emitter by photon excite), utilize aspect described herein or feature and related advantages, for example reduce the reorganization loss of photoproduction carrier.In addition, also aspect of the present invention can be implemented in other class power conversion battery (for example, beta voltaic cell (betavoltaic cell)).
The present invention alleviates the described vertical body weight groups tied in (VMJ) batteries via the veining on the optical receiving surface of vertically tying (VMJ) batteries more more and loses.Described texture can be the form of chamber connected in star (as " V " shape cross-sectional configuration, " U " shape cross-sectional configuration etc.), is approximately perpendicular to the direction of the element cell that piles up formation VMJ comprising the plane of this kind cross-sectional configuration.In one aspect, comprise that the plane of roughly repeating cross section (for example, transversal groove extend direction) thereon is approximately perpendicular to the direction of piling up described element cell.This arranges p+ and the n+ diffusing, doping district that promotes the refract light guiding is left VMJ, produces required carrier simultaneously in the volume that reduces.Correspondingly, incident light can reflect comprising described cross-sectional configuration and be approximately perpendicular in the plane of the described direction of piling up described element cell.
Should be appreciated that the veining of VMJ of the present invention is different with the prior art that is used for conventional silicon photovoltaic cell texture on the directed of PN junction and/or aspect mutual two of incident light.For instance, conventional silicon photovoltaic cell is usually through veining penetrating with prevention light, make that more approach PN junction (horizontal location) absorbs more longer wavelengths realizing better carrier electric current collection, thereby and alleviate difference spectra response longer wavelength in the solar spectrum.Therefore that compares is following, and this does not need among VMJ of enhanced spectrum response of longer wavelength in comprising vertical junction and providing solar spectrum of the present invention.
In particular aspects, (for example implement groove of the present invention, the V groove) result comes ameliorate body reorganization loss-(opposite with the conventional solar energy surface of using veining, this reduces reflection, or cause to become through the light that reflects or reflect more approach to tie) by reducing volume.In particular, described VMJ battery has represented at short wavelength and both better carrier electric current collection of long wavelength, wherein said short wavelength response is owing to the horizontal junction of eliminating top surface place high doped, and described long wavelength response is because the collection efficiency of the enhancing of vertical junction.) as another example, if substitute chamber of the present invention connected in star texture, with other texture (for example, pyramid, vaulted and similar convex configuration at random) be embodied as the part of VMJ, incident light becomes on all directions and reflects so, thereby produces light absorption and therefore produce the efficient that reduces in p+ and n+ diffusion region.
According to correlation technique, can form VMJ by piling up a plurality of battery units at first, wherein each battery itself can comprise a plurality of parallel Semiconductor substrate or the layer that is stacked.Each layer can be made of the impurity doped semiconductor material that forms PN junction, and comprises that further enhancing is towards " inner (built-in) " electrostatic dispersion field that the minority carrier of this kind PN junction moves.Subsequently, integrated a plurality of this type of battery unit is to form VMJ.Next, on the surface of the reception light of described VMJ battery, can form chamber connected in star (for example), be approximately perpendicular to the direction of piling up the described element cell that forms described VMJ comprising the plane of described cross-sectional configuration via the scribing saw.Correspondingly, incident light can comprise described repetition cross-sectional configuration and be approximately perpendicular to refraction in the plane of the described direction of piling up described element cell (for example, thus at given depth supply higher absorption.) in addition, can implement to have the various rear surfaces and the side surface of reflectance coating in conjunction with various aspects of the present invention.
In related fields, groove surfaces of the present invention is further improved the carrier collection, reduces the loss of body weight group simultaneously.For instance, can locate described V groove, with the optical absorption path that increases longer wavelength in the solar spectrum and make light absorption can roughly be confined in the n type tagma of p+nn+ element cell perpendicular to described p+nn+ (or n+pp+) element cell.In addition, this type of V groove can have the antireflecting coating that absorbs with the incident light that improves in the battery through applying.
In related fields, the present invention alleviates the described vertical body weight groups tied in (VMJ) batteries via the veining on the optical receiving surface of vertically tying (VMJ) batteries more more and loses.Described texture can be the form of chamber connected in star (as " V " shape cross-sectional configuration, " U " shape cross-sectional configuration etc.), is approximately perpendicular to the direction of the element cell that piles up formation VMJ comprising the plane of this kind cross-sectional configuration.In one aspect, comprise that the plane of roughly repeating cross section (for example, transversal groove extend direction) thereon is approximately perpendicular to the described direction of piling up described element cell.This arranges p+ and the n+ diffusing, doping district that promotes the refract light guiding is left VMJ, produces required carrier simultaneously in the volume that reduces.Correspondingly, incident light can reflect comprising described cross-sectional configuration and be approximately perpendicular in the plane of the described direction of piling up described element cell.
Should be appreciated that the veining of VMJ of the present invention is different with the prior art that is used for conventional silicon photovoltaic cell texture on the directed of PN junction and/or aspect mutual two of incident light.For instance, conventional silicon photovoltaic cell is usually through veining penetrating with prevention light, make that more approach PN junction (horizontal location) absorbs more longer wavelengths realizing better carrier electric current collection, thereby and alleviate difference spectra response longer wavelength in the solar spectrum.Therefore that compares is following, and this does not need among VMJ of enhanced spectrum response of longer wavelength in comprising vertical junction and providing solar spectrum of the present invention.
In particular aspects, (for example implement groove of the present invention, the V groove) result comes ameliorate body reorganization loss-(opposite with the conventional solar energy surface of using veining, this reduces reflection, or cause to become through the light that reflects or reflect more approach to tie) by reducing volume.In particular, described VMJ battery has represented at short wavelength and both better carrier electric current collection of long wavelength, wherein said short wavelength response is owing to the horizontal junction of eliminating top surface place high doped, and described long wavelength response is because the collection efficiency of the enhancing of vertical junction.) as another example, if substitute chamber of the present invention connected in star texture, with other texture (for example, pyramid, vaulted and similar convex configuration at random) be embodied as the part of VMJ, incident light becomes on all directions and reflects so, thereby produces light absorption and therefore produce the efficient that reduces in p+ and n+ diffusion region.
According to correlation technique, can form VMJ by piling up a plurality of battery units at first, wherein each battery itself can comprise a plurality of parallel Semiconductor substrate or the layer that is stacked.Each layer can be made of the impurity doped semiconductor material that forms PN junction, and comprises that further enhancing is towards " inside " electrostatic dispersion field that the minority carrier of this kind PN junction moves.Subsequently, integrated a plurality of this type of battery unit is to form VMJ.Next, on the surface of the reception light of described VMJ battery, can form chamber connected in star (for example), be approximately perpendicular to the direction of piling up the described element cell that forms described VMJ comprising the plane of described cross-sectional configuration via the scribing saw.Correspondingly, incident light can comprise described repetition cross-sectional configuration and be approximately perpendicular to refraction in the plane of the described direction of piling up described element cell (for example, thus at given depth supply higher absorption.) in addition, can implement to have the various rear surfaces and the side surface of reflectance coating in conjunction with various aspects of the present invention.
In related fields, groove surfaces of the present invention is further improved the carrier collection, reduces the loss of body weight group simultaneously.For instance, can locate described V groove, with the optical absorption path that increases longer wavelength in the solar spectrum and make light absorption can roughly be confined in the n type tagma of p+nn+ element cell perpendicular to described p+nn+ (or n+pp+) element cell.In addition, this type of V groove can have the antireflecting coating that absorbs with the incident light that improves in the battery through applying.
In another aspect, the present invention provides the barrier of ohm contact at one or more buffer strips of terminal layer place's supply of vertical many knot (VMJ) photovoltaic cells of high voltage silicon simultaneously so that the described active layer of protection to be provided.The form that this type of buffer strip can be above the terminal layer that is stacked in described VMJ battery in addition and/or the non-active layer of below is arranged.Described VMJ battery itself can comprise a plurality of battery units, and wherein each battery unit adopts some active layers (for example, three) to form PN junction and " inside " electrostatic dispersion field (its minority carrier that strengthens towards described PN junction moves).
Therefore; the various active layers that can protect any end place of being positioned at the VMJ battery part of its battery unit (and as) (for example; nn+ and/or p+n knot) avoids the stress of harmful form and/or strain (for example, the heat/mechanical pressure that can in described VMJ, bring out in the making of described VMJ and/or operating period, torsion, moment, shearing force etc.).In addition, can the material of low-resistivity ohm contact (metal or semiconductor) form described buffer strip via having roughly, make it under operating condition, in described photovoltaic cell, will can not contribute any essence series resistance loss.For instance, can form described buffer strip by the low-resistivity silicon wafer that adopts the p type to mix, make and when the described VMJ photovoltaic cell of manufacturing, (for example to use other p type dopant, aluminium alloy) time, its will alleviate automatic doping risk (with adopt can produce the n type wafer of not expecting the pn knot and compare-when target be when producing roughly the low-resistivity ohm contact).Should be appreciated that, can be the part of arbitrary class photovoltaic cell (for example, solar cell or hot photovoltaic cell) with the invention process.In addition, also aspect of the present invention can be implemented in other class power conversion battery (for example, beta voltaic cell).
In related fields, described buffer strip can be the form at terminal layer lip-deep edge of battery unit, and it serves as the protection border of this kind active layer and further forms the framework of described VMJ battery so that carrying and transportation.Equally, by realizing firm grip to described VMJ battery, this kind edge forms thing and also is convenient to the operation relevant with the anti-reflective coating (for example, can apply coating equably when keeping described battery (for example, by the mechanical grip to it) securely during operation).In addition, can be between depositional stage physically (for example with described buffer strip, be positioned the non-active layer at the end place of described VMJ) orientate contiguous other buffer strip as, thus and can under the situation of not destruction element cell, easily remove and by mistake be penetrated into arbitrary on the contact surface downwards and do not expect the dielectric coating material.Can form described buffer strip by the silicon of low-resistivity and high doped roughly (for example, about 0.008 " thickness).This kind buffer strip can contact the conductive lead wire that VMJ battery another VMJ battery from photovoltaic battery array is cut apart or separated subsequently.
According to more on the one hand, described buffer strip can be sandwiched between the active layer of electric contact and described VMJ battery.In addition, this type of buffer strip can have the thermal expansion character of approximate match in the thermal expansion character of described active layer, thereby alleviates performance lower one's standard or status (for example, alleviating of the stress/strain that the time caused of welding or soft soldering lead-in wire) during fabrication.For instance, can adopt the thermal coefficient of expansion (3x10 that is matched with all action cell batteries
-6/ ℃) the low-resistivity silicon layer of high doped.Correspondingly, can provide roughly strong ohm contact to described action cell battery, it alleviates in addition by welding/soft soldering and is caused and/or from the stress problem of the thermal coefficient of expansion that do not match in the slider material.Other example comprises the introducing metal level, for example tungsten (4.5x10
-6/ ℃) or molybdenum (5.3x10
-6/ ℃), it is because of roughly being similar to activated silica (3x10
-6/ ℃) thermal coefficient of expansion of p+nn+ element cell and selected.Can not introduce the metallization that welding under the situation of harmful stress or soft soldering are applied to low-resistivity silicon layer outer of described buffer strip or are applied to the metal layer of electrodes that is fused to described action cell battery to high intensity solar cell or photovoltaic cell, wherein this type of is outer as ohm contact; Rather than the element cell section of connecting with other element cell.
Various aspects of the present invention can be embodied as the part of wafer of the Miller indices (111) of the orientation with the crystal face that is associated that is used for described buffer strip, it is regarded as mechanically stronger and etching is slower than (100) the crystal orientation silicon that is generally used for making effect VMJ element cell.Correspondingly, the low-resistivity silicon layer can have the crystal orientation different with the crystal orientation of described action cell battery, wherein by adopting this kind alternative orientations, provides the device of the mechanical strength/terminal contacts with improvement.In other words, compare with the terminal layer that non-effect (111) is directed, (100) the common etching in the edge of Ding Xiang element cell comparatively fast and in fact finishing have the angle of the action cell battery of this kind crystal orientation, be used to weld or the more stabilizing arrangement structure of the more high mechanical properties of link contact in addition thereby produce to have.
In related fields, the present invention adopts vertical many knot (VMJ) photovoltaic cells, produces the electrolysis (for example, the generation of hydrogen and oxygen) that described compound is provided with incident light and electric current via the electrolysis that is used for compound (for example, water).This kind VMJ comprises a plurality of battery units that contact with electrolyte, and wherein each battery unit adopts some active layers (for example, three) to form PN junction and " inside " electrostatic dispersion field (its minority carrier that strengthens towards described PN junction moves).Described VMJ partially or even wholly can be immersed in water/electrolyte, (for example, glass or plastics) a part wherein when light runs into this kind VMJ, can form a plurality of electrolysis electrodes (anode/cathode) in described whole VMJ as transparent vessel.When reaching the threshold voltage of electrolysis, the electric current that flows between this type of electrolysis electrode flows and passes water and break water into hydrogen and oxygen.Usually, this kind decomposition threshold voltage is positioned at 1.18 volts to 1.6 volts scope with division water and produce hydrogen and oxygen.Should be appreciated that, can reach more high voltage by a plurality of battery units (a plurality of batteries that for example, are connected in series) that pile up.In addition, can further adopt catalyst additive to increase hydrogen and oxygen evolution efficient, and reduce the semiconductor corrosion that is caused by high electrode current potential and electrolyte solution.In addition, described electrolyte can be formed (for example, the material of being made by iridium, its bianry alloy or its oxide based on iridium) by arbitrary solution that can not influence the stack layer that forms described VMJ battery nocuously.
In related fields, described VMJ is partially or even wholly immersed in water/electrolyte, and can be included in the outstanding protruding metal zone (for example, VMJ electrode) with increase and water and electrolytical contact area and the generation of enhancing hydrogen, silicon top of described VMJ battery.For instance, this type of protrusion can be some millimeters.According to more on the one hand, electrode catalyst agent material (for example, platinum, the RuO that can during the VMJ battery is made, will roughly approach
2Or titanium) layer is incorporated in the described metallization to strengthen the formation of hydrogen.In addition, select the electrode catalyst agent material to have sizable flexibility, because described metallized n+ negativity (-) side can be different from p+ positivity (+) side for the electrode catalyst agent material.Should be appreciated that the those skilled in the art can select easily to strengthen that hydrogen produces and stable and make compatible catalyst material with the VMJ battery.In addition, can adopt ultrasound unit to discharge to keep attaching to oxygen that is produced or hydrogen bubble on the electrolysis electrode.Should be appreciated that electrolytical also removable this type of the formed bubble that flows.
According to correlation technique, electrolyte solution is incorporated in the container that contains VMJ, in described container with described VMJ fully or roughly submergence.Making this kind system stand incident light and electric current then flows and produces from described VMJ.Incident light on the described VMJ can produce electric current in whole electrolyte solution, and () arbitrary position for example, about 1.6 volts, the electrolysis of water takes place wherein to meet or exceed the threshold value that is used to make water decomposition.For instance, cross over the voltage (for example) that each element cell can produce 0.6 volt and between first module battery area and the 3rd element cell district, electrolysis can take place at 1000 sun optically focused.Correspondingly, can will be positioned in order to the various collecting mechanisms (for example, barrier film, sieve plate etc.) of collecting the oxygen produced and hydrogen between the district that voltage surpasses threshold value (for example, about 1.6 volts) that is used for water electrolysis and the decomposition of expecting water.Should be appreciated that, also this type of collecting mechanism can be positioned in the electrolytical downstream flow to collect oxygen and the hydrogen that is produced.
Address relevant purpose on realizing, this paper describes some illustrative aspect in conjunction with following explanation and accompanying drawing.The variety of way that can put into practice is represented in these aspects, and described aspect is set is covered by herein for all.Other advantage and novel feature can become apparent when describing in detail below in conjunction with graphic consideration.
Description of drawings
Fig. 1 graphic extension according to an aspect of the present invention as the veining of a part of vertically tying (VMJ) batteries or the perspective schematic view of groove surfaces more.
Fig. 2 graphic extension is used to implement the exemplary cross section of groove of the present invention.
Fig. 3 graphic extension is piled up in order to the exemplary of battery unit that formation has a VMJ of groove surfaces according to an aspect of the present invention.
Fig. 4 graphic extension partly forms the discrete cell battery of VMJ according to an aspect of the present invention.
Fig. 5 graphic extension produces VMJ with groove surfaces correlation technique with ameliorate body reorganization loss according to an aspect of the present invention.
Fig. 6 graphic extension is the schematic block diagram of the layout of the buffer strip of the part of vertical many knot (VMJ) batteries of conduct according to an aspect of the present invention.
Fig. 7 graphic extension its array according to a particular aspect of the invention can form the particular aspects of the element cell of VMJ battery.
The lip-deep edge that Fig. 8 graphic extension is the element cell at the arbitrary end place that is positioned at VMJ forms the exemplary cross section of the buffer strip of thing form.
Fig. 9 is illustrated in the vertical terminal layer place of tying (VMJ) photovoltaic cells of high voltage silicon more and adopts buffer strip so that the correlation technique of the barrier of protecting its active layer to be provided.
Figure 10 graphic extension comprises the schematic cross section of solar energy sub-assembly of modular arrangement of photovoltaic (PV) battery of the VMJ that can implement to have buffer strip.
The schematic block diagram of the electrolysis system of vertical many knot (VMJ) batteries is adopted in Figure 11 graphic extension according to an aspect of the present invention at water electrolysis.
Figure 12 graphic extension is from the outstanding metal level protrusion that can promote electrolysis process in the surface of described VMJ.
Figure 13 graphic extension is crossed over described VMJ and as the voltage gradient in the whole stack of cells of its part.
Figure 14 graphic extension is according to an aspect of the present invention via the method for the water electrolysis of VMJ.
Figure 15 graphic extension can be used for the VMJ battery of electrolysis of the present invention.
Figure 16 graphic extension single battery unit, a plurality of described single batteries unit is formed for the VMJ of electrolysis of the present invention.
Figure 17 graphic extension has the VMJ battery of groove surfaces with the efficient of improving electrolysis process.
Figure 18 graphic extension is used for the exemplary grooveization on surface of the VMJ of electrolysis according to an aspect of the present invention.
Figure 19 A and Figure 19 B are the diagrams according to the exemplary configuration of the patterned surface of the aspect PV element that is disclosed in should using.Figure 19 C shows the diagram according to the exemplary set predecessor of aspect disclosed herein and the PV element of deriving that can produce by mixing.
The diagram of the exemplary configuration that Figure 20 A piles up according to the patterned dielectric coating and the illustrative VMJ of PV element in aspect described herein to Figure 20 C graphic extension.The 20D graphic extension is treated to expose the VMJPV battery of specific crystal surface.
The diagram of the exemplary configuration that Figure 21 A piles up according to the patterned dielectric coating and the illustrative VMJ of PV element in aspect described herein to Figure 21 C graphic extension.
Figure 22 graphic extension has the cross-sectional view of exemplary configuration of patterned dielectric coating of the effect PV element of the diffusing, doping layer that reduces according to aspect described herein.
Figure 23 A and Figure 23 B graphic extension are according to the diagram of the exemplary configuration of the patterned dielectric coating of PV element in aspect described herein.
Figure 24 presents the perspective view of embodiment that has the photovoltaic cell of texturizing surfaces according to aspect described herein.
Figure 25 is the flow chart of exemplary methods that is used to produce the photovoltaic cell of the carrier reorganization loss with reduction according to aspect disclosed herein.
Figure 26 shows the flow chart of exemplary methods that is used to produce the VMJ solar cell of the carrier reorganization loss with reduction according to aspect described herein.
Figure 27 is the block diagram according to the example system of the making of realization solar cell in aspect described herein.
Embodiment
Describe the present invention referring now to graphic, wherein in all are graphic, use identical Ref. No. to refer to components identical.For illustrative purposes, in the following description, a large amount of details have been enumerated so that provide to thorough of the present invention.Yet, may be obvious that, can not have to put into practice the present invention under the situation of these details.In other example, show well-known structure and device with the block diagram form, to promote to describe the present invention.
This explanation, appended claims or graphic in, term " or " set mean comprising property " or " and nonexcludability " or ".That is to say that " X adopts A or B " set any one that means in the arrangement of described comprising property naturally obviously found out unless otherwise prescribed or from context.That is to say that if X adopts A, X adopts B, or X adopt A and B both, in above-mentioned example, all satisfy " X employing A or B " so under the situation of any one.In addition, used article in this specification and the accompanying drawing " (a) " reaches " one (an) " should be interpreted as meaning " one or more " usually, obviously is meant singulative unless otherwise prescribed or based on context.
In addition, the nomenclature with respect to as the doping impurity material of the part of photovoltaic cell described herein for the doping donor impurity, is used interchangeably term " n type " and reaches " N type ", and it is also like this that term " n+ type " reaches " N+ type ".For the doping acceptor impurity, term " p type " reaches " P type " and also is used interchangeably, and term " p+ type " to reach " P+ type " also like this.For the purpose of clear, doping type also occurs with abbreviated form, and for example, the n type is marked as N, and the p+ type is indicated as P+ etc.Multilayer photovoltaic element or element cell are marked as one group of letter, wherein the doping type of the described layer of each indication; For instance, the p type/n type knot is marked as PN, and p+ type/n type/n+ type knot is indicated by P+NN+; The mark that other roped party is closed is also observed this note.
Fig. 1 graphic extension is the perspective schematic view of the groove surfaces 100 of the part of vertical many knot (VMJ) batteries 120 of conduct according to an aspect of the present invention.This veining 100 is arranged and is made refract light can be directed leaving p+ and n+ diffusing, doping district, produces required carrier simultaneously.Correspondingly, incident light can reflect in the plane 110 with normal vector n.This kind plane 110 is parallel to the PN junction plane of VMJ 120, and can comprise the cross-sectional configuration of groove 100.In addition, antireflecting coating can be applied to the surface of veining 100 to increase the incident light absorption in the described battery.In other words, the orientation on plane 110 is approximately perpendicular to the direction of stacked unit cells 111,113,115.Should be appreciated that, also can contain other non-perpendicular orientation (for example, the crystal face that exposes with various angles) and all these type of aspects and be regarded as belonging in the scope of the present invention.
Fig. 2 graphic extension is used for the exemplary texture with the surface grooveization of described VMJ, and described VMJ receives light on described surface.This kind grooveization can be the form of chamber connected in star, for instance, as (for example have various angles, 0 °＜＜180 °) " V " shape cross-sectional configuration, " U " shape cross-sectional configuration etc., be approximately perpendicular to direction of piling up the element cell that forms described VMJ and/or the PN junction that is roughly parallel to described VMJ comprising the plane of described cross-sectional configuration.Should be appreciated that, the veining 210,220,230 of VMJ of the present invention the directed of PN junction and/or with incident light mutual on different with the prior art that is used for conventional silicon photovoltaic cell texture.For instance, conventional silicon photovoltaic cell is usually through veining penetrating with prevention light, make that more approach PN junction (horizontal location) absorbs more longer wavelengths realizing better carrier electric current collection, thereby and alleviate difference spectra response longer wavelength in the solar spectrum.That compares is following, and this does not need among VMJ of enhanced spectrum response of longer wavelength in comprising vertical junction and providing solar spectrum of the present invention.
But, (for example be used to implement groove of the present invention, the V groove) a aspect is to come ameliorate body reorganization loss-(opposite with the conventional solar energy surface of using veining, this reduces reflection, or cause to become through the light that reflects or reflect more approach to tie) by reducing volume.In particular, the VMJ battery has represented at short wavelength and both better carrier electric current collection of long wavelength, and wherein said short wavelength response is because the horizontal junction of elimination top surface place high doped and described long wavelength response are because the collection efficiency of the enhancing of vertical junction.) as another example, if substitute chamber of the present invention connected in star texture, with other texture (for example, pyramid, vaulted and similar convex configuration at random) be embodied as the part of VMJ, incident light becomes on all directions and reflects so, thereby produces light absorption and therefore produce the efficient that reduces in p+ and n+ diffusion region.Should be appreciated that this type of " U " reaches " V " connected in star and also belonging in the scope of the present invention for exemplary and other configuration in nature.
Fig. 3 graphic extension can be implemented the layout of the element cell 311,313,317 of groove texture according to an aspect of the present invention on side 345.As explained before, VMJ 315 is formed by a plurality of whole battery units 311,313,317 (1 to k, and k is an integer) that engage itself, and wherein each battery unit itself is formed by substrate that piles up or layer (not shown).For instance, each battery unit 311 can comprise a plurality of parallel Semiconductor substrate that is stacked, and the semi-conducting material by doping impurity constitutes, and the semi-conducting material of described doping impurity forms PN junction and strengthens " inside " electrostatic dispersion field that the minority carrier towards this kind PN junction moves.Should be appreciated that, various N+ types and P type doped layer can be formed a part and this type of layout that thing is embodied as described battery unit and also belong in the scope of the present invention.
Correspondingly, the texture on the optical receiving surface 345 promotes that refract light is directed leaving p+ and n+ diffusing, doping district, produces required carrier simultaneously.Therefore, incident light can reflect comprising cross-sectional configuration and be approximately perpendicular in the plane of the described direction (for example, perpendicular to vector n) of piling up described element cell.
The particular aspects of Fig. 4 graphic extension element cell, its array can form the VMJ battery with veining grooveization of the present invention.Element cell 400 is included in the layer 411,413,415 that is stacked in the layout of almost parallel.This type of layer 411,413,415 can further comprise the semi-conducting material of doping impurity, and its middle level 413 is opposite conductivity type-to define PN junction at intersection point 412 places for a kind of conductivity type and layer 411.Equally, layer 415 can be and layer 413 identical conductivity type-in addition by roughly higher impurity concentration, thereby produces enhancing towards electrostatic dispersion field, inside that the minority carrier of PN junction 412 moves.This type of element cell integral body can be bonded together to form VMJ and according to the surface of various aspects of the present invention grooveization.
According to more on the one hand, for making described VMJ by a plurality of batteries 400, identical PNN+ (or NPP+) can be tied the degree of depth of about 3 to 10 μ m in the flat wafer of high resistivity (for example, being higher than 100ohm-cm) (having about 0.008 inch thickness) that form N type (or P type) silicon at first.Subsequently,, wherein flake aluminum is inserted between it, wherein the PNN+ of each wafer knot and crystal orientation can the equidirectional orientations with this type of PNN+ wafer stacking together.In addition, can adopt aluminium-silicon congruent melting alloy, or have the metal of approximate match in the hot coefficient of the hot coefficient of silicon, for example molybdenum or tungsten.Next, described silicon wafer and aluminium interface can be fused together, make and the sub-assembly that piles up can be bonded together.Also can be stacked in the form supply that the non-active layer of the terminal layer top of described VMJ battery and/or below arranges in addition and have the roughly buffer strip of low-resistivity; thereby implement the described active layer of protection is avoided the stress of harmful form and/or strain (for example, the heat/mechanical pressure that can bring out in the making of VMJ and/or operating period, torsion, moment, shearing force etc.) in described VMJ barrier.The surface grooveization of this kind battery can be lost with the ameliorate body reorganization then, described in detail as preamble.Should be appreciated that, also can adopt other material, for example germanium and titanium.Equally, also can adopt aluminium-silicon congruent melting alloy.
Fig. 5 graphic extension is with the correlation technique 500 of the surface grooveization of the reception light of VMJ.Although this paper is with described exemplary methods graphic extension and be described as the piece of a series of representative variety of events and/or action, the present invention is not limited by the illustrated order of this type of piece.For instance, according to the present invention, except that the illustrated order of this paper, some actions or incident can different order and/or are taken place simultaneously with other action or incident.In addition, implement the method according to this invention and may not need all illustrated pieces, incident or action.In addition, should be appreciated that, can method illustrated with this paper and that describe combine enforcement according to exemplary methods of the present invention and other method, and also can the system and the equipment of graphic extension or description do not combine enforcement with other.
At first, and at 510 places, formation described in detail has a plurality of battery units of PN junction as preamble.As explained before, each battery unit itself can comprise a plurality of parallel Semiconductor substrate that is stacked.Each layer can be made of the impurity doped semiconductor material that forms PN junction, and comprises that further enhancing is towards " inside " electrostatic dispersion field that the minority carrier of this kind PN junction moves.Subsequently, and at 520 places, integrated a plurality of these type of battery units wherein also can be embodied as buffer strip the protection (stress/strain that for example, brings out) to this type of battery thereon to form VMJ during making.Next and at 530 places, on the surface of the reception light of described VMJ battery, can form chamber connected in star (for example) via the scribing saw, be approximately perpendicular to the direction of piling up the described element cell that forms described VMJ comprising the plane of cross-sectional configuration.Subsequently and at 540 places, can reflect incident light comprising described cross-sectional configuration (and/or being parallel to described PN junction) and be approximately perpendicular in the plane of the direction of piling up described element cell.
Fig. 6 graphic extension is the schematic block diagram of the layout of the buffer strip of the part of vertical many knot (VMJ) batteries of conduct according to an aspect of the present invention.VMJ 615 is formed by a plurality of whole battery units 611,617 (1 to n, and n is an integer) that engage itself, and wherein each battery unit itself is formed by substrate that piles up or layer (not shown).For instance, each battery unit 611,617 can comprise a plurality of parallel Semiconductor substrate that is stacked, and the semi-conducting material by doping impurity constitutes, and the semi-conducting material of described doping impurity forms PN junction and strengthens " inside " electrostatic dispersion field that the minority carrier towards this kind PN junction moves.Correspondingly; the various active layers that can protect any end place of being positioned VMJ battery 615 part of its battery unit (and as) (for example; nn+ and/or p+n knot; or pp+ and/or pn+ knot) avoids the stress of harmful form and/or strain (for example, the heat/mechanical pressure that can in described VMJ, bring out in the making of VMJ and/or operating period, torsion, moment, shearing force etc.).
In addition, can form in the buffer strip 610,612 each, alleviate simultaneously and/or eliminate the automatic doping of not expecting via material with ohm contact of low-resistivity (for example, having arbitrary scope) roughly less than the upper limit of about 0.5ohm-cm.For instance, can (for example use other p type dopant by the low resistivity wafers that adopts the p type to mix, aluminium alloy) form buffer strip 610,612, with the risk that alleviates automatic doping (with adopt can produce the n type wafer of not expecting the pn knot and compare-when expectation produces roughly the low-resistivity ohm contact).
The particular aspects of Fig. 7 graphic extension element cell, its array can form the VMJ battery.Element cell 700 is included in the layer 711,713,715 that is stacked in the layout of almost parallel.This type of layer 711,713,715 can further comprise the semi-conducting material of doping impurity, and its middle level 713 is opposite conductivity type-to define PN junction at intersection point 712 places for a kind of conductivity type and layer 711.Equally, layer 715 can be and layer 713 identical conductivity type-in addition by roughly higher impurity concentration, thereby produces enhancing towards electrostatic dispersion field, inside that the minority carrier of PN junction 712 moves.This type of element cell integral body can be bonded together to form VMJ, wherein can locate buffer strip of the present invention to protect described VMJ and to form its associated unit battery and/or layer.
According to more on the one hand, for making described VMJ by a plurality of batteries 700, identical PNN+ (or NPP+) can be tied the degree of depth of about 3 to 10 μ m in the flat wafer of high resistivity (for example, being higher than 100ohm-cm) (having about 0.008 inch thickness) that form N type (or P type) silicon at first.Subsequently, with this type of PNN+ wafer stacking together, wherein thin aluminium lamination inserts between each wafer, and wherein the PNN+ of each wafer knot and crystal orientation can the equidirectional orientations.In addition, can adopt aluminium-silicon congruent melting alloy, or have the metal of approximate match in the hot coefficient of the hot coefficient of silicon, for example molybdenum or tungsten.Next, described silicon wafer and aluminium interface can be fused together, make and the sub-assembly that piles up can be bonded together.In addition, also can adopt aluminium-silicon congruent melting alloy.Should be appreciated that a part and this type of layout that various N+ types and P type doped layer can be embodied as described battery unit also belong in the scope of the present invention.
Also can be stacked in the form supply that the non-active layer of the terminal layer top of described VMJ battery and/or below arranges in addition and have the roughly buffer strip of low-resistivity; thereby implement the described active layer of protection is avoided the stress of harmful form and/or strain (for example, the heat/mechanical pressure that can bring out in the making of VMJ and/or operating period, torsion, moment, shearing force etc.) in described VMJ barrier.
The lip-deep edge that Fig. 8 graphic extension is the terminal layer 831 (841) of element cell 830 (840) forms the exemplary cross section of the buffer strip of thing 810 (812) forms, and its part forms VMJ battery 800.This type of edge forms thing 810,812 and serves as the protection border of the active layer of described battery unit, and further partly forms the framework of VMJ battery 800 so that carrying and transportation (for example, the low-resistivity buffer strip of described VMJ battery and edge or terminal contacts).Equally, by realizing firm grip to VMJ battery 800, described edge forms thing and also is convenient to the operation relevant with the anti-reflective coating (for example, can apply coating equably when keeping described battery (for example, by the mechanical grip to it) securely during operation).In addition, can be during depositing operation physically this type of edge be formed thing and orientate contiguous other limit as and form thing, wherein can under the situation of not destroying element cell 830,840, easily remove and by mistake be penetrated into arbitrary on the contact surface downwards and do not expect the dielectric coating material.Representing the edge of buffer strip to form thing 810 (812) can be by the silicon of roughly low-resistivity and high doped (for example, about 0.008 " thickness) form, wherein said edge forms thing can contact the conductive lead wire that VMJ battery another VMJ battery from photovoltaic battery array is cut apart subsequently.In addition, because the roughly low-resistivity of described buffer strip, do not require that described conductive lead wire has and the electrically contacting fully of described buffer strip.Therefore, it can be the part contact, and for example contact or series of points contact provides good electrical contact simultaneously again.Should be appreciated that Fig. 8 is exemplary in nature, and other version (for example, the buffer strip 810 on the surface of the arrival 800 of Xing Chenging wherein 810 joins active layer 841 to during fabrication) belongs to also in the scope of the present invention.For instance, 810 shape can be represented with the part lead-in wire of metal layer on the buffer strip as previously described and contact.
Described conductive lead wire can be the form of electrode layer, its by deposition first electric conducting material on substrate form-and can comprise tungsten, silver, copper, titanium, chromium, cobalt, tantalum, germanium, gold, aluminium, magnesium, manganese, indium, iron, nickel, palladium, platinum, zinc, its alloy, indium tin oxide, other conduction and semiconductive metal oxide, nitride and silicon dioxide, polysilicon, through doped amorphous silicon and various metal composites alloy.In addition, electrode can adopt other conduction or semiconductive polymer, oligomer or monolithic through doping or undoped, for example PEDOT/PSS, polyaniline, polythiophene, polypyrrole, its derivative etc.In addition, because some metals can have the oxide skin(coating) that can influence the performance of VMJ battery nocuously formed thereon, so nonmetallic materials (for example, amorphous carbon) also can be used for electrode formation.Should be appreciated that the edge of Fig. 8 forms thing and also belonging in the scope of the present invention for other buffer strip configuration (for example, rectangle, circle, cross section) exemplary and that have with the surperficial contact range of described active layer in nature.
In addition, various aspects of the present invention can be embodied as the part of wafer of the Miller indices (111) of the orientation with the crystal face that is associated that is used for described buffer strip, it is regarded as mechanically stronger and etching is slower than (100) the crystal orientation silicon that is generally used for making effect VMJ element cell.Correspondingly, the low-resistivity silicon layer can have the crystal orientation different with the crystal orientation of described action cell battery, wherein by adopting this kind alternative orientations, provides the device of the mechanical strength/terminal contacts with improvement.In other words, compare with the terminal layer that non-effect (111) is directed, (100) the edge etching of Ding Xiang element cell comparatively fast and in fact finishing have the angle of the action cell battery of this kind crystal orientation, be used to weld or the more stabilizing arrangement structure of the more high mechanical properties of link contact in addition thereby produce to have.
Fig. 9 is illustrated in the vertical terminal layer place of tying (VMJ) photovoltaic cells of high voltage silicon more and adopts buffer strip so that the correlation technique 900 of the barrier of protecting its active layer to be provided.Although this paper is with described exemplary methods graphic extension and be described as the piece of a series of representative variety of events and/or action, the present invention is not limited by the illustrated order of this type of piece.For instance, according to the present invention, except that the illustrated order of this paper, some actions or incident can different order and/or are taken place simultaneously with other action or incident.In addition, implement the method according to this invention and may not need all illustrated pieces, incident or action.In addition, should be appreciated that, can method illustrated with this paper and that describe combine enforcement according to exemplary methods of the present invention and other method, and also can the system and the equipment of graphic extension or description do not combine enforcement with other.At first, and at 910 places, formation described in detail has a plurality of battery units of PN junction as preamble.As explained before, each battery unit itself can comprise a plurality of parallel Semiconductor substrate that is stacked.Each layer can be made of the impurity doped semiconductor material that forms PN junction, and comprises that further enhancing is towards " inside " electrostatic dispersion field that the minority carrier of this kind PN junction moves.Subsequently and at 920 places, integrated a plurality of these type of battery units are to form VMJ.Next and at 930 places, can implement to contact the buffer strip of the terminal layer of described VMJ, so that the barrier of its active layer of protection to be provided.The form that this type of buffer strip can be above the terminal layer that is stacked in described VMJ battery in addition and/or the non-active layer of below is arranged.Can described VMJ be embodied as the part of photovoltaic cell then at 940 places.
Figure 10 graphic extension comprises the schematic cross section 1000 of solar energy sub-assembly of the modular arrangement 1020 of photovoltaic (PV) battery 1023,1025,1027 (1 to k, wherein k is an integer).Each PV battery can adopt a plurality of VMJ of the buffer strip that has according to an aspect of the present invention.Usually, each in the PV battery (being also referred to as photovoltaic cell) 1023,1025,1027 can be converted to electric energy with light (for example, daylight).The modular arrangement 1020 of described PV battery can comprise Standardisation Cell or the section that promotes structure and flexible arrangement is provided.
One exemplary aspect in, in the photovoltaic cell 1023,1025,1027 each can be the DSSC (DSC) that comprises a plurality of glass substrate (not shown)s, wherein deposition thereon be transparent conducting coating, fluorine doped tin oxide layer (for instance) for example.This kind DSC can further comprise semiconductor layer, for example TiO
2Particle, sensitizing dyestuff layer, electrolyte and catalyst layer, for example the Pt-(not shown)-it can be sandwiched between the described glass substrate.For instance, can be on the coating of described glass substrate further depositing semiconductor layers, and can with described dye coating as monolayer adsorption on described semiconductor layer.Therefore, can form electrode and opposite electrode by redox flows with the electronics of controlling between it.
Correspondingly, the circulation of battery 1023,1025,1027 experience excitation, oxidation and reduction, this produces flowing of electronics, for example electric energy.For instance, the dye molecule in the incident light 1005 excitation dye coatings, wherein the dye molecule of light stimulus injects electronics the conduction band of described semiconductor layer subsequently.This can cause the oxidation of described dye molecule, and wherein institute's injected electrons can flow through described semiconductor layer to form electric current.After this, described electronics is original electrolyte also at the catalyst layer place, and will be reversed to neutral state through the dye molecule of oxidation.The circulation that can repeat this kind excitation, oxidation and reduction continuously is to provide electric energy.
The schematic block diagram of the electrolysis system of vertical many knot (VMJ) batteries 1110 is adopted in Figure 11 graphic extension according to an aspect of the present invention at electrolysis.Can partially or even wholly VMJ 1110 be immersed in water/electrolyte, as the part of transparent vessel (for example, quartz, glass or plastics) 1130.When incident light 1135 runs into the surface 1137 of this kind VMJ 1110, can form a plurality of electrolysis electrodes that are anode and/or negative electrode form in described whole VMJ and/or on the surface 1137 thereon.When reaching the threshold voltage of electrolysis, the electric current that flows between this type of electrolysis electrode that is formed on the surface 1137 flows then and passes water and break water into hydrogen and oxygen.VMJ 1110 comprises a plurality of whole battery units 1111,1117 that engage (1 to n, wherein n is an integer), and wherein each battery unit itself is formed by substrate that piles up or layer (not shown).For instance, each battery unit 1111,1117 can comprise a plurality of parallel Semiconductor substrate that is stacked, and the semi-conducting material by doping impurity constitutes, and the semi-conducting material of described doping impurity forms PN junction and strengthens " inside " electrostatic dispersion field that the minority carrier towards this kind PN junction moves.When incident light 1135 is directed into surperficially 1137 the time, in each district of VMJ 1110, then can form a plurality of negative electrodes and anode, it is subsequently with the electrode that acts on electrolysis procedure.
When reaching the threshold voltage of electrolysis, the electric current that flows between this type of electrolysis electrode flows and passes described electrolyte and break water into hydrogen and oxygen.Usually, this kind decomposition threshold voltage is positioned at 1.18 volts to 1.6 volts scope with division water and produce hydrogen and oxygen.Should be appreciated that, can reach more high voltage by a plurality of battery units (a plurality of batteries that for example, are connected in series) that pile up.In addition, can further adopt catalyst material to increase the semiconductor corrosion that hydrogen and oxygen evolution efficient and reduction are caused by high electrode current potential and electrolyte solution.In addition, described electrolyte can be formed (for example, the catalyst of being made by iridium, its bianry alloy or its oxide based on iridium) by arbitrary solution that can not influence the stack layer that forms described VMJ battery nocuously.In related fields, ultrasonic transducer (transducer) operationally steeps to discharge the oxygen or the hydrogen that keep attaching on the described electrolysis electrode alternately with described electrolysis system.
Can further VMJ 1110 be positioned on the heat regulation sub-assembly 1119, heat regulation sub-assembly 1119 removes the heat that produces from the hot spot region and is maintained in the predetermine level with the temperature gradient with described VMJ battery.This kind heat regulation sub-assembly 1119 can be the form that fin is arranged, it comprises a plurality of fin of the dorsal part that is surface mounted to described VMJ, and wherein each fin can further comprise a plurality of fin (not shown)s that are approximately perpendicular to described dorsal part extension.(for example, cooling fluids such as electrolyte, for example water) contact, described coolant can be further used for from described fin and/or photovoltaic cell heat dissipation the surface area that described fin can enlarge fin with coolant to increase.Therefore, can conduct from the heat of described VMJ and make it enter electrolyte on every side by described fin, and/or not influence the material of electrolysis procedure.In addition, can be (for example via the heat conduction path that arrives described fin, metal level) conduction alleviating the direct physical or the heat conduction of described fin and described VMJ battery, and is provided for the scalable solution of the appropriate operation of described electrolysis from the heat of described VMJ battery.
In related fields, described fin can be positioned in various planes or the three dimensional arrangement so that monitor, regulate and manage all sidedly the heat flow of leaving described VMJ battery.In addition, each fin can further adopt heat/electric structure (not shown), and described structure can have spiral, reverses, spirals, labyrinth shape or have the comparatively dense pattern distribution of line and have other planform of the more not intensive relatively pattern distribution of line in a part in other parts.For instance, this class formation part can be formed and another part can be formed by the material that high thermoconductivity is provided on other direction by the material that high relatively isotropic conductivity is provided.Correspondingly, each heat of heat regulation sub-assembly/electric structure provides heat conduction path, described heat conduction path can dissipate from the heat of focus and make it enter each heat conducting shell of calorie adjusting device or the fin that is associated, thereby and promotes described electrolysis procedure.Should be appreciated that, can cool off described fin via the independent coolant that separates with described electrolyte medium.
Figure 12 graphic extension one side again that comprises the protrusion 1211,1215 of the metal level that is associated with the electrode of individual unit battery 1201 of the present invention.This type of protrusion 1211,1215 is given prominence to (for example, some millimeters) to promote described electrolysis process via increasing contact surface area from the surface 1241 of VMJ 1200.In addition, electrode catalyst agent material (for example, platinum, the RuO that can during the VMJ battery is made, will roughly approach
2Or titanium) layer is incorporated in the described metallization and produces to strengthen hydrogen.In addition, select the electrode catalyst agent material to have sizable flexibility, because described metallized n negativity (-) side 1211 can be different from p+ positivity (+) side 1215 for the electrode catalyst agent material.Should be appreciated that the those skilled in the art can select easily to strengthen that hydrogen produces and stable and make compatible catalyst material with the VMJ battery.When incident light 1235 arrives the surface 1241 of described VMJ, can form a plurality of cathode/anode thereon.For instance, in the some districts on described VMJ (at electronegative negative electrode place), reduction reaction takes place, and wherein gives the electronics (e of hydrogen cation from described negative electrode
-) to form hydrogen (by the half-reaction of acid balance):
Negative electrode (reduction): 2H
+(aq)+2e
-→ H
2(g)
Give the electronics (e of hydrogen cation from described negative electrode
-) to form hydrogen (by the half-reaction of acid balance).
At the anode place of positively charged, oxidation reaction takes place, thereby produces oxygen and give described cathode electronics to finish described circuit:
Anode (oxidation): 2H
2O (l) → O
2(g)+4H
+(aq)+4e
-
Also can come equilibrium phase half-reaction together by following alkali.In general, not all half-reaction should come balance by acid or alkali.In general, for increasing half-reaction, both should come balance by acid or alkali usually for it.
Negative electrode (reduction): 2H
2O (l)+2e
-→ H
2(g)+2OH
-(aq)
Anode (oxidation): 4OH
-(aq) → O
2(g)+2H
2O (l)+4e
-
Make up arbitrary half-reaction to producing the identical total decomposition of water to oxygen and hydrogen:
Overall reaction: 2H
2O (l) → 2H
2(g)+O
2(g)
Indicated as mentioned, therefore the number of the hydrogen molecule that is produced is the twice of the number of oxygen molecule.Temperature and the pressure of supposing two kinds of gases equate that therefore the hydrogen that is produced have the two volumes of the oxygen that is produced.The number that passes the electronics of water through promotion be the hydrogen molecule that produced number twice and be four times of number of the oxygen molecule that produced.As explained before, if add water-soluble electrolyte, the conductivity of water significantly raises so.Correspondingly, described electrolyte is separated into cation and anion; Wherein said anion rushes at anode and neutralizes the wherein H of the positively charged of accumulation
+Similarly, described cation rushes at negative electrode and neutralizes the wherein electronegative OH of accumulation
-This allows the continuous flow of electricity.Should be appreciated that, should consider electrolytical selection, so that can not influence its material and operation nocuously in conjunction with the material that is used for the VMJ battery.Select electrolytical extra factor about abandoning electronics from described electrolytical anion and hydroxide ion competition.Electrolytic anion with standard electrode potential littler than hydroxide may substitute described hydroxide and oxidized, and therefore will not produce any oxygen.Equally, reduction is had the cation of the standard electrode potential bigger than hydrogen ion, and will not produce any hydrogen.For alleviating this type of situation, following cation has the H of ratio
+Low electrode potential and therefore be suitable for use as electrolyte cation: Li
+, Rb
+, K
+, Cs
+, Ba
2+, Sr
2+, Ca
2+, Na
+And Mg
2+This also can use sodium and lithium, as long as can not influence described VMJ battery-because it forms not expensive soluble salt nocuously.
Voltage-the distance Curve of each point on Figure 13 graphic extension VMJ 1310, wherein element cell 1311,1317 intersects or shares shared border.As illustrated, VMJ 1310 comprises a plurality of element cells 1311,1317 that are connected in series, and the linear function that wherein said voltage can be used as the number of the battery that is stacked increases (for example, on trunnion axis from left to right).As illustrated among Figure 13, battery
1Two ends between voltage difference be 0.6 volt, and by stack of cells thereon
2, kind of the voltage difference of this in assembled battery is increased to 1.2 volts.Equally, by stack of cells thereon
3, described voltage difference rises to 1.8 volts.Therefore, electrolysis can take place between described VMJ lip-deep surpasses any two points of the threshold value be used to make water decomposition.For instance, for the open circuit voltage of 40 knot VMJ batteries under 1000 sun optically focused, can produce 32 volts (for example, each element cell is 0.8 volts).Suppose that with 1.6 volts of initial electrolysis then only two element cells just are enough to provide described voltage.In another aspect, when current loading increased, the voltage of being determined by the VMJ battery IV characteristic that is in maximum power under 1000 sun optically focused dropped to 0.6 volt of 24 volts or every element cell.Therefore, can need three element cells, its contribution is used for to described cell reaction power supply for 1.8 volts.(electrolysis under the higher current density also can need overvoltage usually.)
Although should be further appreciated that under the background of single VMJ and describe electrolysis, the present invention is not so limited and can be embodied as the part of a plurality of VMJ batteries (for example, in parallel and/or series connection, or operatively separation each other).By the current relationship of determining to form between each district that represents different voltages of VMJ, customizable VMJ battery design is to be provided at the extra contact area that need put high current everywhere.For instance, can reduce pick-up current density (if this is what need) by the metallization thickness that increases each some place.In addition, can adopt various forms of pressurizations to improve the collection (for example, screening mechanism, filter mechanism etc.) of the product (for example, hydrogen, oxygen) of electrolytic efficiency and/or decomposition.Should be appreciated that the present invention is not limited to the electrolysis of water and can be suitably also belongs in the scope of the present invention with the electrolysis of mutual other compound of VMJ.
Figure 14 graphic extension is according to an aspect of the present invention via the correlation technique 1400 of the water electrolysis of VMJ.Although this paper is with described exemplary methods graphic extension and be described as the piece of a series of representative variety of events and/or action, the present invention is not limited by the illustrated order of this type of piece.For instance, according to the present invention, except that the illustrated order of this paper, some actions or incident can different order and/or are taken place simultaneously with other action or incident.In addition, implement the method according to this invention and may not need all illustrated pieces, incident or action.In addition, should be appreciated that, can method illustrated with this paper and that describe combine enforcement according to exemplary methods of the present invention and other method, and also can the system and the equipment of graphic extension or description do not combine enforcement with other.Initial and at 1410 places, electrolyte solution is incorporated in the container that contains VMJ, fully or roughly submergence at VMJ described in the described container.Make this kind system stand incident light and produce electric current to flow then from described VMJ at 1420 places.At 1430 places, described incident light can produce water electrolysis in whole electrolyte solution, and () arbitrary position for example, about 1.2 volts, electrolysis takes place wherein to meet or exceed the threshold value that is used to make water decomposition.For instance, cross over the voltage (for example) that each element cell can produce 0.6 volt and between first module battery area and the 3rd element cell district, electrolysis can take place at 1000 sun optically focused.Correspondingly, various collecting mechanisms (for example, barrier film, sieve plate etc.) can be positioned voltage surpasses the threshold value be used for electrolysis and (for example, about 1.6 between) the district, thereby and collects the hydrogen that is produced at 1440 places.Should be appreciated that, also can adopt for example other collection mechanism such as collected downstream.
Figure 15 graphic extension can be used for the VMJ battery of electrolysis according to an aspect of the present invention.VMJ 1515 is formed by a plurality of whole battery units 1511,1517 (1 to n, and n is an integer) that engage itself, and wherein each battery unit itself is formed by substrate that piles up or layer (not shown).For instance, each battery unit 1511,1517 can comprise a plurality of parallel Semiconductor substrate that is stacked, and the semi-conducting material by doping impurity constitutes, and the semi-conducting material of described doping impurity forms PN junction and strengthens " inside " electrostatic dispersion field that the minority carrier towards this kind PN junction moves.In addition; by implementing one or more buffer strips 1510,1512; the various active layers that can protect any end place of being positioned at VMJ battery 1515 part of its battery unit (and as) (for example; nn+ and/or p+n knot) avoids the stress of harmful form and/or strain (for example, the heat/mechanical pressure that can in described VMJ, bring out in the making of VMJ and/or operating period, torsion, moment, shearing force etc.).Can form in this type of buffer strip 1510,1512 each via having the material of low-resistivity ohm contact (for example, having arbitrary scope) roughly, alleviate simultaneously and/or eliminate the automatic doping of not expecting less than the upper limit of about 0.5ohm-cm.For instance, can (for example use other p type dopant by the low resistivity wafers that adopts the p type to mix, aluminium alloy) form buffer strip 1510,1512, with the risk that alleviates automatic doping (with adopt can produce the n type wafer of not expecting the pn knot and compare-when expectation produces roughly the low-resistivity ohm contact).For instance, also can adopt catalyst material (for example, platinum, titanium etc.), to promote electrolysis procedure at the terminal contacts place of described VMJ.)
The particular aspects of Figure 16 graphic extension element cell 1600, its array can be formed for the VMJ battery of electrolysis of the present invention.Element cell 1600 is included in the layer 1611,1613,1615 that is stacked in the layout of almost parallel.This type of layer 1611,1613,1615 can further comprise the semi-conducting material of doping impurity, and its middle level 1613 is opposite conductivity type-to define PN junction at intersection point 1612 places for a kind of conductivity type and layer 1611.Equally, layer 1615 can be and layer 1613 identical conductivity type-in addition by roughly higher impurity concentration, thereby produces enhancing towards electrostatic dispersion field, inside that the minority carrier of PN junction 1612 moves.This type of element cell integral body can be bonded together to form VMJ (for example, engaging the use catalyst material to strengthen electrolysis at this kind), it is described in detail as preamble and carries out electrolysis.
According to more on the one hand, for making VMJ by a plurality of batteries 1600, identical PNN+ (or NPP+) can be tied the degree of depth of about 3 to 10 μ m inches in the flat wafer of high resistivity (for example, being higher than 100ohm-cm) (having about 0.008 inch thickness) that form N type (or P type) silicon at first.Subsequently, with this type of PNN+ wafer stacking together, wherein thin aluminium lamination inserts between each wafer, and wherein the PNN+ of each wafer knot and crystal orientation can the equidirectional orientations.In addition, can adopt aluminium-silicon congruent melting alloy, or also can adopt and have approximate match in the metal such as for example germanium and titanium etc. of the hot coefficient of the hot coefficient of silicon or metal such as molybdenum or tungsten for example.Next, described silicon wafer and aluminium alloy interface can be fused together, make the sub-assembly that piles up to be bonded together (for example, further comprising catalyst material).Should be appreciated that, also can adopt other material, for example germanium and titanium.Equally, also can adopt aluminium-silicon congruent melting alloy.Should be further appreciated that and to select electrolyte to make it can not influence the operation of VMJ nocuously, and/or cause the chemical reaction harmful VMJ.Should be appreciated that, various N+ types and P type doped layer can be formed a part and this type of layout that thing is embodied as described battery unit and also belong in the scope of the present invention.
Figure 17 graphic extension comprises further aspect of the present invention of the VMJ with texturizing surfaces that is used for electrolysis.Illustrate according to an aspect of the present invention perspective schematic view as the groove surfaces 1700 of the part of vertical many knot (VMJ) batteries 1720.This veining 1700 is arranged and is made refract light can be directed leaving p+ and n+ diffusing, doping district, produces required carrier simultaneously.Correspondingly, incident light can reflect in the plane 1710 with normal vector n.This kind plane 1710 is parallel to the PN junction plane of VMJ 1720, and can comprise the cross-sectional configuration of groove 1700.In other words, the orientation on plane 1710 is approximately perpendicular to the direction of stacked unit cells 1711,1713,1715.This kind groove surfaces can increase the efficient of electrolysis process.
Figure 18 graphic extension is used for the exemplary texture with the surface grooveization of described VMJ, and described surface receives light thereon to be used for electrolytical electrolysis.This kind grooveization can be the form of chamber connected in star, for instance, as (for example have various angle θ, 0 °＜θ＜180 °) " V " shape cross-sectional configuration, " U " shape cross-sectional configuration etc., plane comprising described cross-sectional configuration is approximately perpendicular to the direction of piling up the element cell that forms described VMJ, and/or is roughly parallel to the PN junction of described VMJ.Should be appreciated that, the veining 1810,1820,1830 of VMJ of the present invention the directed of PN junction and/or with incident light mutual on different with the prior art that is used for conventional silicon photovoltaic cell texture.For instance, conventional silicon photovoltaic cell is usually through veining penetrating with prevention light, make that more approach PN junction (horizontal location) absorbs more longer wavelengths realizing better carrier electric current collection, thereby and alleviate difference spectra response longer wavelength in the solar spectrum.That compares is following, and this does not need among VMJ of enhanced spectrum response of longer wavelength in comprising vertical junction and providing solar spectrum of the present invention.
But, the groove that is used to implement Fig. 7 (for example, the V groove) a aspect is to come ameliorate body reorganization loss-(opposite with the conventional solar energy surface of using veining, this reduces reflection, or cause to become through the light that reflects or reflect more approach to tie) by reducing volume.In particular, the VMJ battery has represented at short wavelength and both better carrier electric current collection of long wavelength, and wherein said short wavelength response is because the horizontal junction of elimination top surface place high doped and described long wavelength response are because the collection efficiency of the enhancing of vertical junction.) as another example, if substitute chamber of the present invention connected in star texture, with other texture (for example, pyramid, vaulted and similar convex configuration at random) be embodied as the part of VMJ, incident light becomes on all directions and reflects so, thereby produces light absorption and therefore produce the efficient that reduces in p+ and n+ diffusion region.In addition, can apply reflectance coating to the dorsal part of described VMJ battery with further enhancing light absorption.
In another aspect, the present invention relates to improve photovoltaic cell (for example, solar cell) especially can produce the high intensity solar cell (for example, edge illumination or vertical junction structure) of roughly high electric power output under the high-level radiation grade performance.The various designs of PV element of enumerating the element cell that is formed for making the VMJ photovoltaic cell in this article are to reduce the reorganization loss of photoproduction carrier via patterned contact.
Described VMJ battery has the intrinsic theoretical upper limit efficient above 30% under 1000 sun optically focused intensity, therefore use experiment to understand the experience that reaches from computer simulation and modeling analysis, and further performance improvement is possible.Although be easy to the operational analysis equation with good result to conventional sun concentrating solar battery modeling, but it is really not so for VMJ battery situation with the edge illumination of high-intensity operation, because under high strength, even second-order effects can have materially affect to battery-operated efficient.Although in conjunction with solar cell graphic extension aspect of the present invention or feature, but can be (for example at other photovoltaic cell, the battery that hot photovoltaic cell or the lasing light emitter by photon excite) utilizes this type of aspect or feature and related advantages (for example, the reduction of the reorganization of photoproduction carrier loss) in.In addition, also aspect of the present invention can be implemented in other class power conversion battery (for example, beta voltaic cell).
The right physical property of the electronics that produces in the solar cell under the high strength-electric hole carrier is quite complicated, because many physical parameters play a role, include but not limited to: surperficial reorganization speed, carrier mobility and concentration, emitter (for example, diffusion) reverse saturation current, minority carrier life-span, band gap narrow down, in-building type electrostatic field and various recombination mechanism.Mobility reduces fast with the increase of carrier density, and lattice difficult to understand reorganization with as carrier density cube intensity increase fast.For this type of aspect being incorporated in the modeling of VMJ solar cell properties, computer simulation (for example, the two-dimensional digital computational analysis of photoproduction carrier transportation in the semiconductor) can provide with high-intensity operation or be used for the vertical junction element cell of the operation under the high strength or the experience of the physical parameter of PV element.This analoglike provides analysis and design tool to understand the performance that may originate and improve the VMJ battery under the high strength of effectiveness of performance.Should be appreciated that, even although be easy to use the simple analysis equation with good result to conventional sun concentrating solar battery modeling, but the VMJ photovoltaic cell situation for the edge illumination of operating with high exposure intensity is really not so, because under high strength, even second-order effects also can have strong influence to battery-operated efficient.
Issue some given zone that the third contact of a total solar or lunar eclipse is given birth to the reorganization loss of carrier based on incorporating in the calculating simulation exposure VMJ element cell of contact that the Semiconductor Physics element arrays is arranged in high strength to the model of contact VMJ element cell.At least some districts in this type of district present the complexity loss mechanism that depends on intensity.Calculating can be through improving the some districts to reduce the reorganization loss and to improve the performance of VMJ battery in simulation exposure PV element or the VMJ element cell.Aspect of the present invention provides this type of improvement.
Series resistance has been regarded as the important source of the design problem of conventional concentrator solar cell.VMJ photovoltaic cell design proof is more than in this regard enough, even show that series resistance also is out of question under the intensity of 2500 sun optically focused.Yet, in some cases, can be advantageously exchange less simplicity of design with the increase of series resistance, with improve the photovoltaic collector with efficient near the VMJ photovoltaic cell of 1000 sun optically focused operations.
Should be appreciated that, at under the higher-strength roughly (for example, the design of operation 2500 sun optically focused that the VMJ battery still can be operated efficiently) may need roughly harsher and expensive collector system engineering design aspect optics, structure, solar tracking and the thermal control, and can not any better overall performance of contribution or economic benefit.Therefore, the aspect of cited solar cell or feature and the technology that is associated that is used for its generation can improve the efficient performance of the high-strength V MJ battery of operating among the present invention in 1000 sun optically focused or higher scope.Efficient improves can make the VMJ solar cell or other solar cell cost that utilize aspect of the present invention more efficient and feasible, even it can relate to the potential increase of extra manufacturing and series resistance at the intensity greater than 1000 sun optically focused.Aspect described herein or feature can provide the compromise so that photovoltaic collector system of using solar cell, VMJ battery or utilizing aspect of the present invention in addition of enough engineering design provide low $/watt performance the time more feasible and cost is more efficient.
The real parameter (minority-carrier life-span, surperficial reorganization speed etc.) that use is handled greater than the good silicon under the intensity of 500 sun optically focused shows the following percentage reorganization loss of some given zone to the microcomputer modelling analysis of conventional VMJ element cell design (the P+NN+ sheet that for example, has dark knot):
P+ diffusion 22.7%
P+ contact 5.3%
N+ diffusion 32.8%
N+ contact 11.4%
Therefore, this the analysis showed that its hard contact accounts for heavy doping P+ and the N+ diffused emitter district above half of all the reorganization losses in the element cell that forms the VMJ solar cell, and the diffusion N+ emitter of optimization can be different from best diffusion P+ emitter (part is because ambulant difference) in design.The relative value that can lose at N+PP+ element cell or P+NN+ element cell (the having shallow P+N knot) reorganization of handover source in N+ and P+ district.On the one hand, the present invention is directed to the reorganization that reduces in the aforementioned diffusion region and lose to improve the performance of VMJ battery.
Open circuit voltage V by each element cell knot under the high strength
Oc=0.8 volt, in conventional VMJ battery exploitation, successfully reach high minority-carrier life-span and low surperficial reorganization speed.V
OcElectric current and diffused emitter reverse saturation current (J by the daylight generation
o) determine, wherein be present in P+N in the element cell of VMJ solar cell and NN+ and tie both and contribute for open circuit voltage.Become minimum J from the best of TV point
oUse J
o=1x10
-13Acm
-2, on behalf of the low reverse saturation current analysis of high-quality in the diffused junction, it show that the diffusion depth of about 3 to 10 μ m is to be used for P+ and N+ to spread both sufficient degree of depth, even when considering the unlimited reorganization speed at ohmic metal contacts place.
Should note, even dark and progressive NN+ diffusion profiles will provide the electrostatic dispersion field, inside (at final collection) that the minority carrier that will strengthen towards the knot barrier moves and reduce reorganization in this district, but computer simulation discloses the enhancing of NN+ knot and become more ineffective under high strength, and this can cause the higher reorganization in the N+ as implied above district.
Experiment and calculate modeling and simulation has been discerned the main region that is used for improving performance for being the reorganization loss that reduces with the VMJ element cell of high-intensity operation in heavy doping P+ and N+ diffusion and metal contact regions.Because the high quality oxide passivated surface can have the reorganization speed (it significantly is lower than the reorganization speed at hard contact place) that is low to moderate a few cm/ second and consider that the drift field that is produced by diffusion profiles becomes more ineffective under high strength, therefore aspect of the present invention provides metal contact area and the diffusion area that reduces by the patterned dielectric coating of PV element or VMJ element cell, to improve the VMJ Solar cell performance.
With reference to graphic, Figure 19 A is illustrated in the diagram 1900 that has the photovoltaic element 1910 of patterned dielectric coating 1920 between one and the hard contact 1925 in the surface of PV element.Note, do not contact for surface, dielectric coating 1920 and the hard contact 1925 of PV element 1910 being illustrated as for the purpose of clear.Yet in solar cell described herein, this type of surface contacts.Pattern dielectric coating 1920 is illustrated as the incoherent oval district that is assembled in periodic array or the dot matrix.PV element 1910 is generally the N type semiconductor material piece, one during wherein said semi-conducting material is Si, Ge, GaAs, InAs or other III to V semiconductive compound, II to VI semiconductive compound, CuGaSe, CuInSe, CuInGaSe.Described can comprise through doping N+ diffusion region 1914 (being labeled as N+) comprising through doping P+ diffusion region 1916 (being labeled as P+) on the described first surface and be roughly parallel on the second surface of described first surface.N type (N) layer 1912 between the thickness burden diffusing, doping layer 1914 and 1916 of effect PV element 1910.Diffusion layer 1914 and 1916 thickness range can be from 3 μ m to 10 μ m, and determined by the doping process that is used for carrier is introduced in the n type material sheet (for example, sheet 1912).Can realize the diffusing, doping layer is included by the roughly arbitrary doping way (for example, technology and dopant material) that is generally used for semiconductor processes.Dopant material can comprise phosphorus and boron respectively at N+ and P+ doping.For illustrative purposes, the interface between diffusion layer N+1914 and P+1916 and N type (N) layer 1912 is identified as obvious burst boundary; Yet this type of interface can be irregular, and is wherein neutral and have a Mixed Zone between dopant material.The degree of mixing is stipulated by the mechanism or the mode that are used to produce through doped diffusion region at least.
Although at initial N type semiconductor material piece graphic extension aspect of the present invention or feature as the predecessor of PV element 1910, but also can in the predecessor of the initial intrinsic (for example, nominally undoped) of PV element 1910, implement or realize this type of aspect or feature.In addition, in alternative or extra situation, can adopt P type predecessor: PV element 1910 can be the P type through the doped semiconductor materials sheet, its can described first surface and near comprise P+ diffusion layer 1916, and can the second surface that is roughly parallel to described first surface and near comprise N+ dopant diffusion layer 1914, as mentioned before.
In one aspect of the invention, the opening of patterned dielectric coating 1920 in the formation-patterned dielectric coating that reduces metal-diffusing, doping bed boundary (for example, metal and N+ floor 1914 interface) after the metallization of effect PV element 1910 at once is the district that metal level and diffusing, doping floor form the interface.Because this type of interface has high reorganization loss, thus metal-diffusing, doping layer contact reduce alleviate the photoproduction carrier () non-radiative loss for example, electronics and electric hole, the photovoltaic efficiency of PV element 1910 with increase.In addition, applying PV element (for example, 1910) by dielectric substance produces the passivation of surface state and therefore reduces surface reorganization loss.Roughly arbitrary other technology (Wet-type etching for instance) that can pass through the controlled patterning of photoetching technique or permission dielectric surface realizes the patterning of dielectric coating.This type of photoetching technique is usually by to a plurality of coverages of dielectric substance in the dielectric coating and remove treatment step and provide pattern to form.Perhaps or in addition, under the situation of material that has the shelter deposition with the mask of regulation specific pattern, can pass through deposition technique (for example, as the coating of gas phases such as chemical vapor deposition (CVD) and version thereof, electric paste etching CVD (PECVD), molecular beam epitaxy (MBE) etc.) and realize the patterning of dielectric coating.
Should be appreciated that dielectric coating 1920 can be provided by the various plane geometric figures and the configuration that electrically contact that provides between N+ dopant diffusion layer 1914 and the hard contact 1925.Indicated as preamble, in exemplary diagram 1920, dielectric coating 1920 adopts the square-dot matrix in oval incoherent zone to arrange.Also can form other dot matrix of dielectric region.This type of dot matrix can comprise triangle dot matrix, monoclinic lattice, center of area square dot matrix etc.Alternative or the extra layout of one or more parts of dielectric substance can comprise the incoherent or coherent band of dielectric substance in the patterned dielectric coating.It should be noted that and patterned dielectric coating (for example, coating 1920) can be placed (for example, referring to Figure 19 B) between hard contact 1935 and the P+ diffusing, doping layer 1916.The position of patterned dielectric coating 1920 is by the neutral doped junction regulation that has the domination loss in solar collector or other solar-electrical energy conversion equipment or the device under the operation radiation intensity.For instance, at PV element 1910 (for example, the P+NN+ element cell) in, N+ diffusion region or layer and under high electromagnetic radiation intensity, have roughly higher loss with contacting of metal 1925, therefore the patterned dielectric coating 1920 that illustrates in the configuration shown in 1900 can be in order to reduce the roughly least expensive configuration that recombinate (for example, radiativity and non-radiation type) lost and improved the performance (especially under high strength) of PV element 1910.
Should be appreciated that, roughly arbitrary dielectric substance pattern (for example, incoherent aperture array, the space between the dielectric elliptical region in the dielectric coating 1920 for example) (for example can reduce single diffusion layer, N+ layer 1914) reorganization located loss because the metallization that in step after a while, applies can guarantee next planar unit cells in joining the VMJ battery structure fully to the time all or roughly all open contact areas be connected to each other.The element cell that is used to produce the VMJ photovoltaic cell as described herein is by being coated with dielectric pattern and metallized as mentioned before PV element 1910 constitutes.Therefore, this type of element cell is different from the conventional element cell that is used to make conventional VMJ solar cell.Notice that the increase of metal level and the series resistance in the PV element (for example, 1910) that can be the formation solar cell than small area of contact in the middle of the doped layer piles up is contributed; Therefore, the favourable pattern that is used to reduce the contact area ratio is that the smaller opening opened of high density tight spacing is to be used to optimize the performance of given intensity.Reorganization loss can comprise the radiativity or the non-radiation type reorganization of photoproduction carrier, and it is lax etc. that wherein the non-radiation type reorganization can comprise lattice scattering difficult to understand, carrier-phonon.Lattice recombination rates difficult to understand with carrier density (for example, the density of photoproduction carrier) cube and increase; When taking into account lattice volume scattering difficult to understand, double to cause the reorganization loss to be increased to 16 times the volume of photovoltaic devices.Therefore, can utilize thin sheet 1910 or make PV element 1910 (for example than thin roughly arbitrary Change In Design, use is caught by the surface (for example, V groove surfaces, U groove surfaces ...) or the light of dorsal part reflector of veining) come the thickness of the element cell by reducing to form the VMJ photovoltaic cell to alleviate body lattice reorganization difficult to understand under the high strength.When recombinating 50% reduction of losing as the VMJ element cell burden that designs according to aspect described herein, the collection efficiency in the PV battery can significantly increase.
Should be appreciated that dielectric coating 1920 can adopt roughly arbitrary dielectric substance.On the one hand, dielectric coating can be thermal oxide layer, and it has low surperficial reorganization speed.Should further understand, realize with the based semiconductor that in dielectric, has patterned opening (for example, based on Si) the element cell of VMJ photovoltaic cell or the end of PV element electrically contact that can need can be by electrically contacting that low-resistivity silicon (its heat coupling or approximate match are in the thermal coefficient of expansion of described element cell) or metal (molybdenum or the tungsten that for example, have the hot coefficient that is close to the hot coefficient that is matched with silicon) provide fully.Equally, for based on the semi-conducting material of non-silicon or the VMJ solar cell of compound, the electric conducting material of hot coefficient that can be by having the hot coefficient that is close to the semi-conducting material be matched with the element cell that forms described VMJ solar cell (for example, metal or low-resistivity are through doped semiconductor) carry out the metallization of patterned dielectric coating (for example, 1920 or 1960).
With respect to metal level, metal contact layer 1925 can be complete different with metal contact layer 1935.For instance, first metal contact layer (for example, layer 1925) can comprise dopant, and second contact layer (for example, layer 1935) can be incorporated into and diffusion barrier arranged to alleviate automatic doping.
Figure 19 B is the diagram 1950 that has the photovoltaic element 1910 of patterned dielectric coating in two diffusing, doping districts.In diagram 1950, the first patterned dielectric coating 1920 is between the N+ diffusing, doping layer 1914 and first hard contact 1925, and the second patterned dielectric coating 1960 is between the P+ diffusing, doping layer 1916 and second hard contact 1935.The aspect of the aspect of dielectric coating 1960 and dielectric coating 1920 is roughly the same.As mentioned above, metal contact layer 1925 and 1935 can be complete different.
It should be noted that reorganization loss by introducing the photoproduction carrier that the second patterned dielectric coating provides alleviate and with the PV element function of increase surpass and the complexity of the increase of preparing the extra process action that the second patterned dielectric coating is associated and may extra charge.
For guaranteeing the efficient operation of PV element 1910 in the photovoltaic devices, first pattern in the dielectric coating 1920 will be relevant with second pattern in the coating 1960, so that make one group of one or more opening of metal level 1925 and section relative.When patterned dielectric coating 1920 with respect to patterned dielectric coating 1960 be " out-phase " and dielectric coating when covering the section of respective metal layers 1925 mutually, the resistance between the element cell during PV element 1910 piles up increases and the efficient of VMJ solar cell reduces.
In addition or or, see through the opening that pattern dielectric coating 1920 forms and can be different from the opening that produces by dielectric coating 1960, for example different area in size.For instance, more need to have the N+ contact openings area wideer than the aperture area of the P+ contact in PV element 1910 or the P+NN+ element cell, more effectively to reduce total losses, especially in the N+ diffusion region and the hard contact place exist under the situation of higher loss.As mentioned above, Quan can implement or utilize between the openings of sizes this kind opposite sex and no matter the specific pattern of dielectric coating how.
Figure 19 C shows the diagram according to the exemplary set predecessor of aspect described herein and the PV element of deriving that can produce by mixing.Indicated as preamble, it is as described herein treated to introduce the PV element of patterned dielectric coating and hard contact to adopt three kinds of predecessor types to produce: (i) the N type is through doping predecessor 1980, (ii) the P type reaches (iii) intrinsic predecessor 1990 through doping predecessor 1985.Predecessor is a semiconductive material, and for example Si, Ge, GaAs, InAs or other III are to the V semiconductive compound; II is to VI semiconductive compound, CuGaSe, CuInSe, CuInGaSe.After doping, N type predecessor 1980 can cause comprising the PV element 1982 of N+ type diffusing, doping district and P+ type doped region at once, and this kind PV element is a PV element 1910.In addition, the doping of predecessor 1980 can cause PV element 1984, and its middle level or district are N type and P type diffusing, doping.Predecessor 1985 is realized the formation of PV elements 1986 and 1988, and wherein N+ and P+ diffusing, doping layer are in PV element 1986, and N+ diffusing, doping and P type are entrained in the element 1988.The various doping of intrinsic predecessor 1990 produce PV element 1992 to 1998.In PV element 1992, comprise P type and N type doped region; PV element 1994 comprises N+ type and P type doped layer; PV element 1996 comprises N type and P+ type doped layer; And N+ type and P+ type layer are included in the PV element 1998.Although the different doped regions that will introduce in precursor material 1980,1985 and 1990 are illustrated as through extension area, can spatially be limited to or distinguished near being limited to this type of, as described herein.Available patterned dielectric substance applies the illustrated various PV elements of this paper and as described herein it is metallized can be piled up to produce the element cell of monolithic photovoltaic cell according to aspects of the present invention to form.On the one hand, can be used for land PV collector by applying the patterned contact that forms in P+NN+PV element or the element cell, use and P+PN+PV element or element cell can more can stand radiation hardening and therefore be used for space with patterned dielectric substance.
Figure 20 A is the diagram 2000 of cross section with the PV element on the single surface by the dielectric coating patterning.Pattern of dielectric material produces the dielectric sections 2005 that is deposited on N+ diffusing, doping layer 2014 top.Extra or the alternative arrangements that it should be noted that the PV element that has patterned dielectric coating on the P+ diffusing, doping layer 2016 is possible.In diagram in 2000 in the illustrated PV element, N type district 2012 separates diffusing, doping district 2014 with 2016.As mentioned above, this kind is configured in that to alleviate the reorganization loss aspect that is associated with the operation of PV element under the high strength be effective.
Figure 20 B is illustrated in the PV element by the diagram 2030 after hard contact 2025 and 2035 metallization.The existence in patterned dielectric coating district 2005 reduces the electric coupling between the electric contact 2025 and 2035 on the N+ diffusion layer 2014.As mentioned above, metal contact layer can be complete different.
The formation element cell 2070 that Figure 20 C graphic extension is wherein piled up along direction 2080
1To 2070
M(M is a positive integer) utilizes the exemplary embodiment of the VMJ photovoltaic cell 2060 of one-sided asymmetric patterned dielectric coating (for example, applying with dielectric region 2005) on N+ diffusing, doping layer.From element cell 2070 as the PV element
λ(λ=1,2...M) pile up and the VMJ solar cell that produces is the structure of monolithic (for example, integrally engaging), axial orientation.On the one hand,, can form two class VMJ photovoltaic cells: (a) similar and (b) foreign peoples based on the semiconductive material of element cell.In (a), element cell 2070
1To 2070
MBased on identical or roughly the same predecessor, and in (b), element cell is based on complete different predecessor.Complete different predecessor can be based on identical semiconductive compound, for example Si, Ge, GaAs, InAs or other III to V semiconductive compound, II to VI semiconductive compound, CuGaSe, CuInSe, CuInGaSe, but it is different on doping type, or different on fusion concentration for the compound of fusion.Similar VMJ photovoltaic cell can utilize the various piece of the emission spectrum of electromagnetic radiation source, for example solar spectrum.The VMJ solar cell can produce series voltage along direction 2080
Δ V wherein
CBe to constitute PV element 2070
λVoltage.On the one hand, M～40 are generally used for forming the VMJ solar cell.1cm with M～40
2VMJ is exportable near 25 volts down in typical operation conditions (for example, incident photon flux, radiation wavelength, temperature etc.).Should be appreciated that the performance of PV stacked elements is had the PV element limits of lowest performance, because this kind element is the electric current output bottleneck in being connected in series; That is, electric current output is reduced to the electric current output of the poorest element cell of performance.Therefore, for optimizing performance, based under the condition of the performance characterization of expecting under the normal operating condition that roughly is similar to solar energy collector system in described field (for example, radiation wavelength, aggregation intensity) performance characterization that in test envelope, carries out, form the piling up of the effect PV element of VMJ photovoltaic cell or element cell and can be currents match or intimate currents match.The electric current of coupling is the electric current that is produced at once after the solar-electrical energy conversion by PV element or element cell.
In addition, can handle the PV element 2070 that (for example, sawing, cutting, etching, peel off etc.) produces the VMJ solar cell
1To 2070
MMonolithic pile up so that particular crystal plane (qrs) is exposed when being PV module or device a part of or near being exposed to daylight, wherein q, r, s are Miller indices at described VMJ solar cell, it is an integer.On the one hand, for reaching the essence passivation of surface state, particular crystal plane can (100) plane.The 20D graphic extension is piled up the VMJ PV battery 2090 that 2092 (the patterned contacts with the style that is presented among Figure 20 C) produce by PV element or element cell, and described VMJ PV battery is treated to expose specific crystal surface (qrs) (by at direction＜qrs〉go up 2094 indications of directed normal vector).Note, can utilize any PV element to form the VMJ PV battery that exposes crystal face (qrs) with patterned contact as herein described.In addition, as the part of described processing, and based on direction＜qrs, the part 2096 of removable described VMJ PV battery is to produce flat surfaces to promote or to realize that described VMJ PV battery is used for PV device or module.
Figure 21 A is the diagram that the exemplary dielectric coating pattern of PV element is arrived in graphic extension.Pattern 2130 and 2140 is corresponding to first and second surperficial pattern in the PV element.Opening in the described dielectric coating is line or band, and it has through defining width w 2135 and having intervals w each other
P2145.On the one hand, this kind hatch frame in the pattern dielectric coating provides the (1+w/w that reduces of contact area
P)
-1For instance, work as w=w
PThe time, there be 50% reduce in contact area.Yet because the increase that can be series resistance than small area of contact contributes, the preferred line or the strip pattern that therefore are used to reduce the contact area ratio are less line or the strip openings that highdensity tight spacing is opened.Can change described density to optimize the performance of given radiation intensity (it serves as that the described PV element of expection is as the part of solar cell in the PV module or the PV battery radiation intensity with its operation).Extra or alternative pattern on the apparent surface of PV element 1910 or wafer also is possible and favourable.As illustrated, can on the opposite side of each PV element 1910 or wafer, make line or strip openings and from directed 90 degree of side direction opposite side mistake; That is, the band in the patterned dielectric coating 2130 is with respect to＜100〉angle 1935 degree of direction are directed, and the band in the patterned dielectric coating 2140 is with respect to＜100 the miter angle degree aim at.Notice that other relative mistake orientation also may reach favourable.In addition, indicated as mentioned, the opening that sees through patterned dielectric coating 2130 formation can be different from the opening that produces by dielectric coating 2140 in size, for example crosses over different area.For instance, more need to have the N+ contact openings area wideer usually than the aperture area of the P+ contact in the PV element with P+NN+ element cell, more effectively to reduce total losses, especially in the N+ diffusion region and the hard contact place exist under the situation of higher loss.In replacement scheme, may need to implement the P+ contact openings area wideer and lose with the reorganization that alleviates in the N+PP+ element cell (for example, the PV element 1986) than the aperture area of N+ contact.
Making vertical multijunction solar cell when (it comprises the PV element that piles up and fuse patterned surface as herein described), when being bonded together with metallization, Ding Xiang dielectric area can form the low resistance contact in defining pattern by different way.On the one hand, described contact (promoting by the opening in dielectric coating 2130 and 2140) is directly aimed at and is contiguous mutually in controlled pattern, the P+ contact of one of them wafer is situated between in the N+ contact of some some places and next wafer and connects, to keep the series resistance in the finished product VMJ battery lower.As mentioned before, on the one hand in, the VMJ battery of sawing made so that its have preferably＜100 in irradiated surface crystal orientation to be to set up the minimum surface state of passivation.Therefore, as illustrated among Figure 21 A, the line on the first surface of patterned PV element or the relative orientation of band can be apart from the angle γ of line in the second surface or band (for example, 90 degree) mistake is directed relatively, wherein said first and second surface comprises described＜100〉crystal orientation, for example normal direction is in described (100) crystal face.Other orientation of line or band also may reach favourable.Equally, can implement the directed γ of relative mistake of different surfaces place line or band.On the one hand, the directed γ of mistake is limited real number; For example, the dielectric coating pattern is not aligned with each other in complete different surface.In addition, owing to can handle VMJ photovoltaic cell as herein described, therefore can be with respect to crystal orientation＜qrs to expose or roughly to expose arbitrary crystal face (qrs)〉the angle a of (wherein q, r and s are Miller indices) comes the band in the directional dielectric coating.In particular, band on the first surface in the patterned dielectric coating can comprise with respect to＜qrs〉the band of the first angle [alpha] orientation, and the band in the patterned dielectric coating can be with respect to＜qrs in the second surface the second angle beta (orientation of α ≠ β); Thereby provide mistake directed γ=alpha-beta.
Figure 21 B graphic extension P+ diffusing, doping layer 2176 and N+ diffusing, doping layer 2174 deposit the cross-sectional view of the PV element 2150 of dielectric coating pattern on both.In PV element 2150, N type district 2172 separates diffusing, doping district 2014 with 2016.Illustrated cross section is the cross section of the aligning of those dielectric regions (for example, dielectric region 2165) on dielectric region on the graphic extension first surface (for example, dielectric region 2155) and the second surface.Should be appreciated that other cross section interface can show the misalignment district of dielectric substance (described first surface and second surface).As mentioned above, this kind aimed at the series resistance that promotes keeping between the PV element 2150 when piling up with formation VMJ solar cell, because the hard contact in the P+ diffusing, doping layer can be matched with the hard contact in the follow-up N+ diffusing, doping layer that piles up, as illustrated among Figure 21 C.Should be appreciated that indicated as mentioned, the spacing in the middle of the dielectric region 2155 can be different from the spacing between the dielectric region 2165.
Figure 22 graphic extension has the cross-sectional view of the exemplary PV element 2200 in dielectric coating district 2205, dielectric coating district 2205 produces by the deposition of patterned dielectric coating 2202, and its promotion or make it possible to reduces at least one in the metal contact area in the surface of described PV element at once after the metallization of described PV element.In PV element 2200, N+ diffusion region 2214 is through the reorganization loss of structure to reduce the doped layer volume and therefore to alleviate the photoproduction carrier.Can determine the N+ doped region by the hatch frame in the patterned dielectric coating; For example, N+ diffusion region 2214 can be along the band of the spacing orientation in the striping pattern of dielectric coating 2202.Form this type of district by utilizing dielectric coating district 2205 to mix with control or manipulation N+ as mask.At least in part based on the topology of patterned dielectric coating 2202 and institute's crystallizing field 2205, can limit to fully or accurate limitation N+ diffusing, doping zone or volume 2214, for example at two or still less limited on the direction and extend upward the third party.In the feature of PV element 2200, n type material district 2212 is scattered with N+ diffusing, doping district 2214.In addition, need not apply P+ diffusing, doping district 2216 by patterned dielectric substance.
After metallization (for example, apply the surface of P+ diffusion layer 2216 and (for example be subjected to limitation, incoherent N+ diffusing, doping district with hard contact, distinguish 2214 groups) patterned surface), can pile up and handle (for example, by soft soldering of high temperature manufacturing step or fusion) one group at once and have VMJ photovoltaic cell with formation according to the reorganization loss of the reduction of aspect described herein through metallized PV element.
Deposit the cross-sectional view of the PV element 2300 of dielectric coating pattern on Figure 23 A graphic extension relative diffusion doped region.On the one hand, (for example utilize the first dielectric coating pattern, along with respect to＜100〉the striping pattern 2330 of the direction orientation of crystal orientation ROT13 5 degree) reduce the Metal Contact surface at place, the first diffusing, doping district, and the second dielectric coating pattern (for example, with respect to described＜100〉the directed striping pattern 2340 of crystal orientation 45 degree).Both can be included in the doped region 2314 and 2316 that is limited on two or more directions respectively N+ and P+ diffusing, doping district.Opening in the described dielectric coating pattern can be used as mask to produce the dopant diffusion layer that volume reduces; Described opening is forming through applying between dielectric district 2305 and 2325.The reducing of two Metal Contact surfaces, diffusing, doping layer place and doped region volume can provide the carrier reorganization loss of the enhancing that reduces with respect to dielectric coating in the single doped region and doping volume to alleviate.As mentioned above, the benefit through improving the PV performance of the VMJ that produces by patterned PV element or element cell surpasses extra process complexity and the cost that is associated with patterned surface.In addition, the opening that sees through 2330 formation of pattern dielectric coating can be different from the opening that produces by dielectric coating 2340 in size, for example crosses over different area, so that the further reorganization of Controlling Source self-diffusion doped region loss.For instance, may more need to have the opening of the generation N+ doped region bigger, more effectively to reduce total losses, especially in described N+ diffusion region and hard contact place when having higher loss than the opening that produces the P+ doped region.
Figure 23 B graphic extension has as mentioned above can mutually different metal contact layer 2365 and the cross section of 2375 patterned PV element 2350.Illustrated cross section cross section shows the lip-deep metal area 2365 (for example, in the space of dielectric substance) of N+ diffusing, doping layer and lip-deep metal area 2375 (for example, the district in the space of the dielectric substance) aligning of P+ diffusing, doping layer.In PV element 2350, in N type predecessor, form doped region.Can pile up and handle one group of patterned PV element 2350 has through improving the VMJ solar cell of performance with formation.
Figure 24 presents and has texturizing surfaces and by along normal direction in element cell 2410
1To 2410
10The direction on plane pile up the perspective views of the exemplary embodiment of vertical many knot (VMJ) photovoltaic cells 2405 of veining that described element cell forms; Each element cell 2410
κ(κ=1,2 wherein ... 10) constitute by PV element with patterned dielectric coating and hard contact, as described herein.Although one group of 10 element cell of graphic extension in exemplary veining PV battery 2405 notice that veining VMJ photovoltaic cell can comprise M element cell, wherein M is a positive integer.Can be with texture VMJ photovoltaic cell (for example, 2410
κ) in element cell be embodied in element cell 2070
λ, 2180
λ, or 2350, or in any other element cell of production as described herein.In photovoltaic cell 2405, texturizing surfaces 2412 is the V groove surfaces; Yet, can form the groove or the chamber of other different shape, for example the U groove.Described texturizing surfaces is formed into because of processing has the element cell of patterned metal as herein described contact or the monolithic of PV element piles up on the plane (qrs) that exposes or roughly be exposed to electromagnetic radiation; For example, referring to Figure 20 D.Incident light can reflect in the plane 2430 with normal vector n 2432.This kind plane 2430 parallel element cells 2410 that are coated with patterned dielectric substance thereon
κThe surface, and can comprise that the cross-sectional configuration-plane 2430 of groove 2415 is approximately perpendicular to stacked unit cells 2410
κDirection.Element cell 2410
κThe veining (it causes texturizing surfaces 2412) on the monolithic surface of piling up make refract light can be directed leaving P+ and N+ diffusing, doping district and do not hinder the photoproduction of carrier, thereby the element cell that will form veining photovoltaic cell 2405 is effectively made thinlyyer, and as the indicated reduction reorganization of preamble loss.In addition, antireflecting coating can be applied to texturizing surfaces 2410 absorbs with the incident light that increases in the described battery.
In view of above-mentioned example system and element, can understand better to the flow chart among Figure 28 with reference to Figure 25 can be according to the exemplary methods of the subject matter enforcement that is disclosed.For the purpose of the simplicity of explaining, described method cited herein presented and be illustrated as a series of actions; Yet, should understand and understand, the restriction that the subject matter of being asked is not subjected to running order of addressing is because the order that some actions can be different with the illustrated and described order of this paper and/or take place simultaneously with other action.For instance, should understanding and understand, can be a series of state or incidents (for example, in state diagram or interactive graphics) of being mutually related with method replacing representation as herein described.In addition, enforcement is according to not all illustrated actions of needs of exemplary methods of this specification.In addition, but Joint Implementation exemplary methods described herein to realize one or more features or advantage.
Figure 25 is the flow chart of exemplary methods 2500 that is used to produce the VMJ solar cell of the carrier reorganization loss with reduction according to aspect disclosed herein.This exemplary methods is not limited to solar cell and it also can be through carrying out to produce arbitrary or roughly arbitrary photovoltaic cell.Practicable exemplary methods 2500 of one or more assemblies as herein described or module.At action 2510 places, by one group of surface of dielectric coating patterning photovoltaic element (for example, the PV element 1910).Comprise the one or more arbitrary appropriate technology that utilizes in the described dielectric coating of generation preamble by the described PV element of dielectric coating patterning.As an example, patterning can be undertaken by deposition and photoetching technique.As another example, also can adopt etching technique to come the complementary or additional patterning agreement that is adopted.Can adopt roughly arbitrary or arbitrary dielectric substance to apply described group of surface.At action 2520 places, hard contact is deposited on one or more in the patterned surface of described PV element.Action 2530 substitute or extra realization can comprise ohm contact or conductive contact are deposited on one or more in the patterned surface of described PV element.The material that is used for described hard contact or ohm contact can be embodied in roughly arbitrary or arbitrary electric conducting material, for example low-resistivity is through doped semiconductor or metal.On the one hand, described electric conducting material preferably has the hot coefficient of the hot coefficient that is close to the semi-conducting material that is matched with described PV element.In another aspect, described electric conducting material has and promotes patterned and through the engagement characteristics of piling up of metallized PV element.More on the one hand in, the pattern of dielectric substance coating is by aiming at complete different lip-deep metal area (for example, in the pattern 2330 and 2340 90 spent the directed striping opening of mistake and produced the Metal Contact district of aiming at along stacking direction (for example, the z direction 2080)) guarantee that apparent surface's metallization generation has low-resistance district.At action 2530 places, pile up one group patterned, through metallized photovoltaic element to form the VMJ solar cell.Should be appreciated that this type of PV element can comprise and limited to the diffusing, doping district as mentioned above.At action 2540 places, handle formed VMJ solar cell to promote deployment, optimization photovoltaic performance or its combination in the PV device.This kind processing can comprise various manufacturing steps or program, for example cutting process, polishing program, cleaning procedure, integrated program etc.This class method can to small part at when being deployed in formed VMJ solar cell in the PV device, particular crystal plane being exposed to daylight.In an example, processing comprises the formed VMJ battery of cutting so that incite somebody to action＜100〉crystal face exposures or roughly be exposed to daylight to set up the minimum surface state of passivation.
Figure 26 is the flow chart of exemplary methods 2600 that is used to produce the solar cell of the carrier reorganization loss with reduction according to aspect described herein.This exemplary methods 2600 is not limited to make solar cell; Exemplary methods 2600 also can be through carrying out to produce arbitrary or roughly arbitrary photovoltaic cell.Practicable exemplary methods 2600 of one or more assemblies as herein described or module.At action 2610 places, by one group of surface of dielectric coating patterning photovoltaic element (for example, the PV element 1910).Comprise the one or more arbitrary appropriate technology that utilizes in the described dielectric coating of generation preamble by the described PV element of dielectric coating patterning.As an example, patterning can be undertaken by deposition and photoetching technique.As another example, also can adopt etching technique to come the complementary or additional patterning agreement that is adopted.Can adopt roughly arbitrary or arbitrary dielectric substance to apply described group of surface.At action 2620 places, can utilize patterned dielectric coating to produce and be limited to the diffusing, doping district in the described PV element.Described patterned dielectric coating can be used as the mask of the limitation degree of regulation doped region.On the one hand, the limitation of described doped region can be near two dimension, and wherein said doping is roughly limited to along a dimension extension and along two complete different directions.The limitation of doped region also can be near three-dimensional, and the doping in the wherein said PV element is limited to one group, and one or more are roughly less than the localized areas (for example, referring to Figure 22) of the size of described PV element.As an example, striping dielectric substance pattern (for example, pattern 2330) can cause when acting on the mask of doping roughly on both direction (for example, nominally towards the dispersal direction at the center of undoped semiconductor material slices and normal direction in described patterned coating spacing or the direction of band) limited to the diffusing, doping layer.The diffusing, doping district is subjected to limitation district to reduce its volume and alleviates photoproduction carrier reorganization loss.
At action 2630 places, ohm contact is deposited on one or more in the patterned surface of described PV element.The material that is used for described ohm contact can be embodied in roughly arbitrary or arbitrary electric conducting material, for example low-resistivity is through doped semiconductor or metal.On the one hand, described electric conducting material is close to the hot coefficient of the semi-conducting material be matched with described PV element (for example, Si, Ge, GaAs, InAs or other III to V semiconductive compound, II to VI semiconductive compound, CuGaSe, CuInSe, CuInGaSe...) and is suitable for fusing.Indicated as preamble, the pattern of dielectric substance coating is by aiming at complete different lip-deep metallized area (for example, in the pattern 2330 and 2340 90 spent the directed striping opening of mistake and produced the Metal Contact district of aiming at along stacking direction (for example, the z direction 2080)) guarantee that ohm contact has low-resistance district to the deposition generation on the relative patterned surface.
At action 2640 places, pile up one group patterned, through metallized photovoltaic element to form solar cell.The described group of photovoltaic element that forms described solar cell crossed over M element, and wherein M is the natural number of being determined by the object run voltage of described solar cell at least in part.On the one hand, described group of PV element can be similar or the foreign peoples.In homogeneous groups, each element in described group or element cell are based on identical or roughly the same predecessor, and in foreign peoples's group, each element is based on complete different predecessor.Complete different predecessor can be based on identical semiconductive compound, for example Si, Ge, GaAs, InAs or other III to V semiconductive compound, II to VI semiconductive compound, CuGaSe, CuInSe, CuInGaSe, but it is different on doping type, or different on fusion concentration for the compound of fusion.In addition, this type of is patterned, comprise through metallized PV element and limited to the diffusing, doping district as mentioned above.At 2650 places, handle described solar cell to promote the deployment in the PV device, optimize photovoltaic performance or its combination.Processing can comprise various manufacturing steps or program, for example cutting process, polishing program, cleaning procedure, integrated program etc.This type of step can be exposed to daylight with particular crystal plane to small part is set when being deployed in formed solar cell in the PV device.In an example, handle and to comprise the formed solar cell of cutting so that will the exposure of (100) crystal face or roughly be exposed to daylight to set up the minimum surface state of passivation.Should be appreciated that, can handle described solar cell to expose or roughly to expose other crystal face, for example (qrs) plane (for example, (311)).
Figure 27 is the block diagram according to the example system 2700 of the making of realization solar cell in aspect described herein.Deposition reactor 2710 realizes the processing of the wafer of based semiconductor is formed with generation the PV element or the element cell of solar cell as described herein (for example, VMJ solar cell).Deposition reactor 2710 and module wherein comprise that various nextport hardware component NextPorts, component software or its combination and associated electrical or electronic circuit are to realize described processing.Aspect in, applicator module 2712 allows the surface by dielectric coating patterned semiconductor wafer or substrate.Nominally described wafer or substrate can be undoped or through mixing, and be the predecessor of the PV element that is used to produce described solar cell.Indicated as mentioned, patterning can be based on via the described dielectric substance of appropriate mask, photoetching or etching deposit.Deposition reactor 2710 comprises that also permission is included in dopant the doping module 2714 in the semiconductor predecessor of PV element.Dopant can formation diffusing, doping layer as indicated above (for example, referring to Figure 19 or Figure 23); Yet doping module 2714 is also born the roughly doping of arbitrary type, for example based on the doping of extension (for example, Δ mixes).In addition, doping module 2714 allows to form and can prevent the diffusion barrier of doping automatically.
As mentioned above, applying the PV element with dielectric substance can take place before or after mixing.Doping after patterned dielectric coated utilizes this kind coating to be limited to or the approaching doped region (for example, referring to Figure 22) that limited to be used for producing as mask.
Metallization module 2716 realizes the deposition of metal levels to the PV element that comprises doped region (extend or limited to) and patterned dielectric coating.Can realize metallization by the deposition of semi-conducting material (by follow-up doping) or metal material.On the one hand, this type of material has the hot coefficient that is matched with or is close to the hot coefficient that is matched with the PV element with doped region.
Deposition reactor 2710 can comprise sputtering chamber, epitaxial chamber, vapor deposition chamber, electron beam gun, source material clamper, wafer stocker, sample substrates, stove, vacuum pump (for example, turbine pump, diffusion pump) etc.In addition, deposition reactor 2710 can comprise: comprising the computer of processor and memory, wherein memory is volatibility or non-volatile; Programmable logic controller (PLC); Application specific processor, for example special chip collection; Or the like.Deposition reactor 2710 also can comprise software application such as operating system for example or handle the action code command of (comprising previously described those actions at least) in order to carry out one or more.Described hardware, software or its combination promote or realize deposition reactor 2710 and wherein at least a portion of module is functional.Bus 2718 allows various hardware in the deposition reactor 2710, software or the transmission of its combination average information (for example, data or code command), the transfer of material, the exchange of treated element etc.
Can be to package platforms 2730 supply photovoltaic elements to be used for further processing.Exchange link (for example, conveyer link) or wherein switch room and dynamo-electric assembly can be supplied described PV element; By in described exchange link of arrow 2720 graphic extensions or the switch room at least one.Knockdown block 2732 can be collected one group of PV element and allow and pile up in the described PV element each to produce solar cell (for example, VMJ solar cell) by high-temperature technology or step.With described pile up transfer to described solar cell be accomplished to the specification module 2734 of definite specification, for example, sawing is described piles up to allow to expose the particular crystal plane that forms the PV element of described solar cell in described the piling up.Can promote by test module 2760 at least in part or allow this kind processing, test module 2760 can determine the crystallography orientation of PV element described in the described solar cell or element cell; Can confirm that this kind is definite via the X-ray spectroscopy, for example difraction spectrum and swing curve spectrum.
The purpose of guaranteeing for quality or for satisfying specification, each stage precursor material or treated material that test module 2760 detectable solar cells are made.As an example, the density of the opening in the patterned dielectric coating of test module 2760 detectable PV elements is to determine whether this kind density is enough for expection day luminous intensity or photon flux in solar collector.As another example, test module can be determined the detecting density that can produce because of the thermal cycle in the PV element with metal level, to confirm being used for metallized material or whether technology is enough.At least for this type of purpose, test module 2760 can be implemented or realize minority-carrier lifetime measurement, X-ray spectroscopy, scanning electron microscopy, wears the tunnel electron microscopy, scan and wear tunnel microscopy, electron energy loss spectroscopy etc.That the detection of being implemented by test module 2760 can be original position or ex situ.Can be fed to test module via exchange link 2740 and 2750 samples with the predecessor of treated material or device (for example, solar cell).
Polytechnic at least a portion that the practicable logic of processing unit (not shown) is described with the operation of control this paper coupling system 2700.This type of processing unit (not shown) can comprise the processor of carrying out the code command of carrying out described control logic; Described code command (for example, program module or software application) can be stored in the memory (not shown) that functionally is coupled to described processor.
Content mentioned above comprises the example of the system and method that advantage of the present invention is provided.Certainly, can not describe each combination that can conceive of each assembly or method for describing purpose of the present invention, but those skilled in the art will appreciate that the subject matter of being asked can have many other combinations and arrangement.In addition, with regard to this detailed description, claims, annex and graphic in used term " comprise (includes) ", " having (has) ", " having (possesses) " etc., the mode that comprises of this type of term is set be similar to term " comprise (comprising) " when in claims, being used as adversative " comprising (comprising) " explained like that.
Claims (according to the modification of the 19th of treaty)
1. photovoltaic cell, it comprises:
The monolithic of the photovoltaic of a plurality of based semiconductors (PV) element piles up, and each element in the PV element of wherein said a plurality of based semiconductors comprises at least one in P type diffusing, doping district or the N type diffusing, doping district;
Patterned dielectric coating, its roughly normal direction that is deposited on described P type diffusing, doping district is in the surface of the described stacking direction that described monolithic piles up at least one of the roughly normal direction in the surface of the stacking direction that described monolithic piles up or described N type diffusing, doping district; And
Metal level, it is arranged in the middle of the element of PV element of described a plurality of based semiconductors at the interface, and described metal level covers patterns of openings and the top part of the PV element of first based semiconductor is contacted with the bottom part of the PV element of second based semiconductor.
2. photovoltaic cell according to claim 1, in wherein said P type diffusing, doping district or the described N type diffusing, doping district at least one comprises that one or more are subjected to limitation district, and described one or more are limited at least one district in the district less than each element in the PV element of described a plurality of based semiconductors.
3. photovoltaic cell according to claim 2, wherein said patterns of openings form at least one in incoherent dielectric material region or the coherent dielectric material region.
4. photovoltaic cell according to claim 3, wherein said coherent dielectric material region comprise the periodic lattice of dielectric area or in the nearly periodic lattice at least one.
5. photovoltaic cell according to claim 3, wherein said incoherent dielectric material region comprises with respect to＜qrs〉the one group of band or the＜qrs described of the first angle orientation in crystal orientation to depart from〉in one group of band of the second angle orientation in crystal orientation at least one, wherein q, r and s are Miller indices.
6. the density of the band at least one in the photovoltaic cell according to claim 5, wherein said group of band is at least in part by the PV element of the described a plurality of based semiconductors of the expection radiation intensity regulation with its operation.
7. photovoltaic cell according to claim 3, the second diffusing, doping layer that the first diffusing, doping layer in the wherein said PV element is coated with in the first dielectric substance pattern and the described PV element is coated with the second dielectric substance pattern.
8. photovoltaic cell according to claim 7, the wherein said first dielectric substance pattern are determined by the loss of the reorganization in described first diffusing, doping layer mechanism at least in part.
9. photovoltaic cell according to claim 8, the wherein said second dielectric substance pattern are determined by the loss of the reorganization in described second diffusing, doping layer mechanism at least in part.
10. photovoltaic cell according to claim 1, piling up of the photovoltaic of wherein said a plurality of based semiconductors (PV) element is treated so that particular crystal plane roughly is exposed to daylight.
11. photovoltaic cell according to claim 1, wherein said metal level have at least one thermal coefficient of expansion of at least one thermal coefficient of expansion of the described semi-conducting material that is close to the described photovoltaic element of coupling.
12. the electric current of the supply output at once after power conversion of photovoltaic cell according to claim 1, the photovoltaic of wherein said based semiconductor (PV) element is to be close to coupling.
13. photovoltaic cell according to claim 1, each element in the PV element of wherein said a plurality of based semiconductors are to form by one in N type semiconductive predecessor, P type semiconductive predecessor or the intrinsic semiconductive predecessor mixed.
14. photovoltaic cell according to claim 1, the surface that wherein said monolithic piles up comprises having the texturizing surfaces that the chamber forms article pattern, and wherein said chamber forms the removing of at least a portion of one or more elements of article pattern from the PV element of described a plurality of based semiconductors and produces.
15. a method that is used to produce the photovoltaic cell of the photoproduction carrier reorganization loss with reduction, described method comprises:
One group of surface with dielectric coating patterning photovoltaic (PV) element of the patterns of openings that comprises a plurality of at least incoherent districts of formation;
Ohm contact is deposited on one or more the going up in the described group of surface of described PV element to cover described patterns of openings;
A plurality of patterned PV elements and ohm contact are piled up to form vertical many knot (VMJ) photovoltaic cells; And
Handle described formed VMJ photovoltaic cell to promote deployment, optimization photovoltaic performance or its combination in the PV device.
16. one or more surfaces in the method according to claim 15, wherein said group of surface comprise the diffusing, doping layer, it is crossed over through extension area or is subjected to the limitation district.
17. method according to claim 15, it further comprises and utilizes patterned dielectric coating to produce as mask to be limited to the diffusing, doping district in the described photovoltaic element.
18. method according to claim 15, the material that wherein is used for described ohm contact are the electric conducting materials with at least one thermal coefficient of expansion of at least one thermal coefficient of expansion that is close to the described photovoltaic element of coupling.
19. method according to claim 15, with one group of surface of dielectric coating patterning photovoltaic (PV) element comprise deposition with respect in the described PV element＜qrs the crystal orientation the first angle orientation one group of band or to depart from the described＜qrs in the described PV element in one group of band of the second angle orientation in crystal orientation at least one, wherein q, r and s are Miller indices.
20. the density of the band at least one in the method according to claim 19, wherein said group of band is at least in part by the PV element of the described a plurality of based semiconductors of the expection radiation intensity regulation with its operation.
21. method according to claim 15, wherein said processing action comprises the described formed VMJ photovoltaic cell of cutting roughly (qrs) crystal face is exposed to daylight, and wherein q, r and s are Miller indices.
22. method according to claim 15, the patterned PV element and the piling up of ohm contact that wherein form described VMJ photovoltaic cell are currents match.
23. an equipment, it comprises:
Be used for comprising the member on one group of surface of dielectric coating patterning photovoltaic (PV) element of the patterns of openings in a plurality of at least incoherent districts of formation;
The one or more of described patterned surface that are used for hard contact is deposited on described PV element go up to cover the member of described patterns of openings;
Be used for one group of patterned PV element and hard contact are piled up to form the member of vertical many knot (VMJ) photovoltaic cells; And
Be used for handling described formed VMJ photovoltaic cell to promote at the deployment of PV device and the member of optimization photovoltaic performance.
24. equipment according to claim 23, it further comprises and is used for utilizing that described dielectric coating produces described photovoltaic element as mask that one or more are limited to the member in diffusing, doping district, and wherein said one or more are limited at least one district in the district less than described PV element.
25. equipment according to claim 24, it further comprises at least one member of the PV element that is used for surveying the PV element, has dielectric coating, the PV element with hard contact or formed VMJ photovoltaic cell.
26. a photovoltaic cell, it comprises:
Vertical many knot (VMJ) photovoltaic cells, it comprises a plurality of whole battery unit that engages that piles up along stacking direction; And
The texturizing surfaces that is used for light-receiving of described VMJ, described texturizing surfaces are used to alleviate the body weight group loss of described VMJ, and described texturizing surfaces reflects light in the plane of the PN junction that is parallel to described VMJ battery.
27. VMJ photovoltaic cell according to claim 26, described stacking direction are approximately perpendicular to transversal described texturizing surfaces to produce the plane of the cross sectional pattern that roughly repeats.
28. VMJ photovoltaic cell according to claim 26, substrate comprise that further promotion is towards " in-building type " electrostatic dispersion field that the minority carrier of described PN junction moves.
29. a VMJ manufacture method, it comprises:
Integrally engage a plurality of active layers to form the VMJ battery; And
Alleviate bulk diffusion in the described VMJ battery via the texturizing surfaces of the reception incident light of described VMJ, described texturizing surfaces increases the optical absorption path of described incident light, and realizes the essence limitation of the light absorption in the P/N junction plane of described VMJ battery.
30. method according to claim 29, it further comprises reflects described incident light in the plane of the PN junction that is parallel to described VMJ battery.
31. a photovoltaic cell, it comprises:
Be used for strengthening the member to the spectral response of wavelength of photovoltaic cell; And
Be used to alleviate the member of the body weight group loss of described photovoltaic cell.
32. a photovoltaic cell, it comprises:
Vertical many knot (VMJ) photovoltaic cells, it comprises a plurality of whole battery units that engage, each battery unit has a plurality of layers that form PN junction; And
Buffer strip, it protects described a plurality of layer to avoid the stress that brings out and in the strain at least one on described VMJ photovoltaic cell.
33. photovoltaic cell according to claim 32, described buffer strip can be embodied as the lip-deep edge of the terminal layer of battery unit and form thing.
34. photovoltaic cell according to claim 32, described resilient coating comprise the low-resistivity silicon layer that general height is mixed.
35. a method of protecting the active layer in the VMJ battery, it comprises:
Integrally engage a plurality of active layers to form described VMJ battery; And
Protect in stress, shearing force, moment and the torsion that described active layer avoids bringing out at least one via buffer strip on described VMJ battery.
36. method according to claim 35, it further comprises and forms buffer strip with low-resistivity roughly part as the terminal layer of described VMJ battery.
37. method according to claim 35, it further is included between the skin of element cell incorporates ohm contact into.
38. a photovoltaic cell, it comprises:
Be used to form the member of the PN junction in vertical many knot (VMJ) photovoltaic cells; And
Be used to protect a plurality of active layers to avoid the stress that on described VMJ photovoltaic cell, brings out or the member of strain.
39. an electrolysis system, it comprises:
Vertical many knot (VMJ) photovoltaic cells, it comprises a plurality of whole battery units that engage, each battery unit has a plurality of layers that form PN junction; And
Electrolyte, it receives the electric current that described VMJ photovoltaic cell is produced, and described electric current decomposes described electrolyte.
40. according to the described electrolysis system of claim 39, described VMJ photovoltaic cell has groove surfaces.
41. a method that makes the electrolyte electrolysis, it comprises:
Integrally engage a plurality of active layers have buffer strip with formation VMJ battery; And
A battery produces current to be used for electrolytical electrolysis from described VMJ.
42. according to the described method of claim 41, it further comprises by the heat regulation sub-assembly described VMJ battery is cooled off.
43. according to the described method of claim 41, it further is included in and forms a plurality of anodes and negative electrode on the surface of described VMJ battery.
44. an electrolysis system, it comprises:
Be used for making via incident light the degradable member of electrolyte decomposition, described degradable member further comprises the member that is used to strengthen to the spectral response of wavelength; And
Be used for member that described degradable member is cooled off.
Claims (44)
1. photovoltaic cell, it comprises:
The monolithic of the photovoltaic of a plurality of based semiconductors (PV) element piles up, and each element in the PV element of wherein said a plurality of based semiconductors comprises at least one in P type diffusing, doping district or the N type diffusing, doping district;
Patterned dielectric coating, it is deposited on in described P type diffusing, doping district or the described N type diffusing, doping district at least one; And
Metal level, it is arranged in the middle of the element of PV element of described a plurality of based semiconductors at the interface.
2. photovoltaic cell according to claim 1, at least one in wherein said P type diffusing, doping district or the described N type diffusing, doping district comprise that one or more are subjected to the limitation district.
3. photovoltaic cell according to claim 2, wherein patterned dielectric coating comprise at least one in incoherent dielectric material region or the coherent dielectric material region.
4. photovoltaic cell according to claim 3, wherein said coherent dielectric material region comprise the periodic lattice of dielectric area or in the nearly periodic lattice at least one.
5. photovoltaic cell according to claim 3, wherein said incoherent dielectric material region comprises with respect to＜qrs〉the one group of band or the＜qrs described of the first angle orientation in crystal orientation to depart from〉in one group of band of the second angle orientation in crystal orientation at least one, wherein q, r and s are Miller indices.
6. the density of the band at least one in the photovoltaic cell according to claim 5, wherein said group of band is at least in part by the PV element of the described a plurality of based semiconductors of the expection radiation intensity regulation with its operation.
7. photovoltaic cell according to claim 5, the second diffusing, doping layer that the first diffusing, doping layer in the wherein said PV element is coated with in the first dielectric substance pattern and the described PV element is coated with the second dielectric substance pattern.
8. photovoltaic cell according to claim 7, the wherein said first dielectric substance pattern are determined by the loss of the reorganization in described first diffusing, doping layer mechanism at least in part.
9. photovoltaic cell according to claim 8, the wherein said second dielectric substance pattern are determined by the loss of the reorganization in described second diffusing, doping layer mechanism at least in part.
10. photovoltaic cell according to claim 1, piling up of the photovoltaic of wherein said a plurality of based semiconductors (PV) element is treated so that particular crystal plane roughly is exposed to daylight.
11. photovoltaic cell according to claim 1, wherein said metal level have the thermal coefficient of expansion of the thermal coefficient of expansion of the described semi-conducting material that is close to the described photovoltaic element of coupling.
12. the electric current of the supply output at once after power conversion of photovoltaic cell according to claim 1, the photovoltaic of wherein said based semiconductor (PV) element is to be close to coupling.
13. photovoltaic cell according to claim 1, each element in the PV element of wherein said a plurality of based semiconductors are to form by one in N type semiconductive predecessor, P type semiconductive predecessor or the intrinsic semiconductive predecessor mixed.
14. comprising, photovoltaic cell according to claim 1, the surface that wherein said monolithic piles up have the texturizing surfaces that the chamber forms article pattern.
15. a method that is used to produce the photovoltaic cell of the photoproduction carrier reorganization loss with reduction, described method comprises:
One group of surface with dielectric coating patterning photovoltaic (PV) element;
Ohm contact is deposited on one or more in the described patterned surface of described PV element;
One group of patterned PV element and ohm contact are piled up to form vertical many knot (VMJ) photovoltaic cells; And
Handle described formed VMJ photovoltaic cell to promote deployment, optimization photovoltaic performance or its combination in the PV device.
16. one or more surfaces in the method according to claim 15, wherein said group of surface comprise the diffusing, doping layer, it is crossed over through extension area or is subjected to the limitation district.
17. method according to claim 15, it further comprises and utilizes patterned dielectric coating to produce as mask to be limited to the diffusing, doping district in the described photovoltaic element.
18. method according to claim 15, the material that wherein is used for described ohm contact are the electric conducting materials with thermal coefficient of expansion of the thermal coefficient of expansion that is close to the described photovoltaic element of coupling.
19. method according to claim 15, with one group of surface of dielectric coating patterning photovoltaic (PV) element comprise deposition with respect in the described PV element＜qrs the crystal orientation the first angle orientation one group of band or to depart from the described＜qrs in the described PV element in one group of band of the second angle orientation in crystal orientation at least one, wherein q, r and s are Miller indices.
20. the density of the band at least one in the method according to claim 19, wherein said group of band is at least in part by the PV element of the described a plurality of based semiconductors of the expection radiation intensity regulation with its operation.
21. method according to claim 15, wherein said processing action comprises the described formed VMJ photovoltaic cell of cutting roughly (qrs) crystal face is exposed to daylight, and wherein q, r and s are Miller indices.
22. method according to claim 15, the patterned PV element and the piling up of ohm contact that wherein form described VMJ photovoltaic cell are currents match.
23. an equipment, it comprises:
The member that is used for one group of surface of dielectric coating patterning photovoltaic (PV) element;
Be used for hard contact is deposited on member on described patterned surface one or more of described PV element;
Be used for one group of patterned PV element and hard contact are piled up to form the member of vertical many knot (VMJ) photovoltaic cells; And
Be used for handling described formed VMJ photovoltaic cell to promote the member of deployment, optimization photovoltaic performance or its combination at the PV device.
24. equipment according to claim 23, it further comprises and is used for utilizing patterned dielectric coating to produce the member that is limited to the diffusing, doping district of described photovoltaic element as mask.
25. equipment according to claim 24, it further comprises at least one member of the PV element that is used for surveying the PV element, has dielectric coating, the PV element with hard contact or formed VMJ photovoltaic cell.
26. a photovoltaic cell, it comprises:
Vertical many knot (VMJ) photovoltaic cells, it comprises a plurality of whole battery unit that engages that piles up along stacking direction; And
The texturizing surfaces that is used for light-receiving of described VMJ, described texturizing surfaces are used to alleviate the body weight group loss of described VMJ.
27. VMJ photovoltaic cell according to claim 26, described stacking direction are approximately perpendicular to transversal described texturizing surfaces to produce the plane of the cross sectional pattern that roughly repeats.
28. VMJ photovoltaic cell according to claim 26, substrate comprise that further promotion is towards " in-building type " electrostatic dispersion field that the minority carrier of PN junction moves.
29. a VMJ manufacture method, it comprises:
Integrally engage a plurality of active layers to form the VMJ battery; And
Alleviate bulk diffusion in the described VMJ battery via the texturizing surfaces of the reception incident light of described VMJ.
30. method according to claim 29, it further comprises reflects described incident light in the plane of the PN junction that is parallel to described VMJ battery.
31. a photovoltaic cell, it comprises:
Be used for strengthening the member to the spectral response of wavelength of photovoltaic cell; And
Be used to alleviate the member of the body of described photovoltaic cell in conjunction with loss.
32. a photovoltaic cell, it comprises:
Vertical many knot (VMJ) photovoltaic cells, it comprises a plurality of whole battery units that engage, each battery unit has a plurality of layers that form PN junction; And
Buffer strip, it protects described a plurality of layer to avoid the stress that brings out and in the strain at least one on described VMJ photovoltaic cell.
33. photovoltaic cell according to claim 32, described buffer strip can be embodied as the lip-deep edge of the terminal layer of battery unit and form thing.
34. photovoltaic cell according to claim 32, described resilient coating comprise the low-resistivity silicon layer that general height is mixed.
35. a method of protecting the active layer in the VMJ battery, it comprises:
Integrally engage a plurality of active layers to form described VMJ battery; And
Protect in stress, shearing force, moment and the torsion that described active layer avoids bringing out at least one via buffer strip on described VMJ battery.
36. method according to claim 35, it further comprises and forms buffer strip with low-resistivity roughly part as the terminal layer of described VMJ battery.
37. method according to claim 35, it further is included between the skin of element cell incorporates ohm contact into.
38. a photovoltaic cell, it comprises:
Be used to form the member of the PN junction in vertical many knot (VMJ) photovoltaic cells; And
Be used to protect a plurality of active layers to avoid the stress that on described VMJ photovoltaic cell, brings out or the member of strain.
39. an electrolysis system, it comprises:
Vertical many knot (VMJ) photovoltaic cells, it comprises a plurality of whole battery units that engage, each battery unit has a plurality of layers that form PN junction; And
Electrolyte, it receives the electric current that described VMJ photovoltaic cell is produced, and described electric current decomposes described electrolyte.
40. according to the described electrolysis system of claim 39, described VMJ photovoltaic cell has groove surfaces.
41. a method that makes the electrolyte electrolysis, it comprises:
Integrally engage a plurality of active layers to form the VMJ battery; And
A battery produces current to be used for electrolytical electrolysis from described VMJ.
42. according to the described method of claim 41, it further comprises by the heat regulation sub-assembly described VMJ battery is cooled off.
43. according to the described method of claim 41, it further is included in and forms a plurality of anodes and negative electrode on the surface of described VMJ battery.
44. an electrolysis system, it comprises:
Be used for making the degradable member of electrolyte decomposition via incident light; And
Be used for member that described degradable member is cooled off.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310219468.5A CN103354247B (en) | 2008-08-14 | 2009-08-12 | Electrolysis system and the method making electrolyte be electrolysed |
| CN201310219215.8A CN103337546B (en) | 2008-08-14 | 2009-08-12 | There is photovoltaic cell and the related application of treated surface |
Applications Claiming Priority (17)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8892108P | 2008-08-14 | 2008-08-14 | |
| US8893608P | 2008-08-14 | 2008-08-14 | |
| US61/088,921 | 2008-08-14 | ||
| US61/088,936 | 2008-08-14 | ||
| US8938908P | 2008-08-15 | 2008-08-15 | |
| US61/089,389 | 2008-08-15 | ||
| US9253108P | 2008-08-28 | 2008-08-28 | |
| US61/092,531 | 2008-08-28 | ||
| US12/535,952 US20100037937A1 (en) | 2008-08-15 | 2009-08-05 | Photovoltaic cell with patterned contacts |
| US12/535,952 | 2009-08-05 | ||
| US12/536,992 | 2009-08-06 | ||
| US12/536,987 | 2009-08-06 | ||
| US12/536,982 US20100037943A1 (en) | 2008-08-14 | 2009-08-06 | Vertical multijunction cell with textured surface |
| US12/536,987 US8106293B2 (en) | 2008-08-14 | 2009-08-06 | Photovoltaic cell with buffer zone |
| US12/536,992 US8293079B2 (en) | 2008-08-28 | 2009-08-06 | Electrolysis via vertical multi-junction photovoltaic cell |
| US12/536,982 | 2009-08-06 | ||
| PCT/US2009/053576 WO2010019685A1 (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
Related Child Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013102194702A Division CN103337547A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
| CN201310219215.8A Division CN103337546B (en) | 2008-08-14 | 2009-08-12 | There is photovoltaic cell and the related application of treated surface |
| CN201310219468.5A Division CN103354247B (en) | 2008-08-14 | 2009-08-12 | Electrolysis system and the method making electrolyte be electrolysed |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102171840A true CN102171840A (en) | 2011-08-31 |
Family
ID=43663782
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801392214A Pending CN102171840A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
| CN201310219468.5A Expired - Fee Related CN103354247B (en) | 2008-08-14 | 2009-08-12 | Electrolysis system and the method making electrolyte be electrolysed |
| CN2013102194702A Pending CN103337547A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
| CN201310219215.8A Expired - Fee Related CN103337546B (en) | 2008-08-14 | 2009-08-12 | There is photovoltaic cell and the related application of treated surface |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310219468.5A Expired - Fee Related CN103354247B (en) | 2008-08-14 | 2009-08-12 | Electrolysis system and the method making electrolyte be electrolysed |
| CN2013102194702A Pending CN103337547A (en) | 2008-08-14 | 2009-08-12 | Photovoltaic cells with processed surfaces and related applications |
| CN201310219215.8A Expired - Fee Related CN103337546B (en) | 2008-08-14 | 2009-08-12 | There is photovoltaic cell and the related application of treated surface |
Country Status (11)
| Country | Link |
|---|---|
| EP (1) | EP2327107A1 (en) |
| JP (1) | JP2012500474A (en) |
| CN (4) | CN102171840A (en) |
| AU (1) | AU2009281960A1 (en) |
| BR (1) | BRPI0917838A2 (en) |
| CA (2) | CA2733976C (en) |
| IL (1) | IL211205A0 (en) |
| MX (1) | MX2011001738A (en) |
| RU (2) | RU2472251C2 (en) |
| TW (1) | TWI535042B (en) |
| WO (1) | WO2010019685A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437208A (en) * | 2011-12-08 | 2012-05-02 | 上海太阳能电池研究与发展中心 | Mechanically assembled solar cell |
| CN103165718A (en) * | 2011-12-09 | 2013-06-19 | 清华大学 | Solar energy battery pack |
| CN104302812A (en) * | 2012-03-30 | 2015-01-21 | 赢创工业集团股份有限公司 | Photoelectrochemical cell, system and process for light-driven production of hydrogen and oxygen with a photoelectrochemical cell, and process for producing the photoelectrochemical cell |
| CN103165718B (en) * | 2011-12-09 | 2016-12-14 | 清华大学 | Solar battery group |
| CN106328643A (en) * | 2015-06-29 | 2017-01-11 | 美环能股份有限公司 | Energy conversion device and power transistor module using the same |
| TWI583015B (en) * | 2015-07-01 | 2017-05-11 | 美環能股份有限公司 | A photovoltaic power converter receiver |
| CN114270000A (en) * | 2019-08-06 | 2022-04-01 | 特斯拉股份有限公司 | System and method for improving the color appearance of a solar roof |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI418046B (en) * | 2010-12-03 | 2013-12-01 | Mh Solar Co Ltd | A manufacturing method for the multi-junction solar cell |
| TWI424657B (en) * | 2010-12-03 | 2014-01-21 | Mh Solar Co Ltd | Concentrating solar cell system with the heating device |
| TWI420798B (en) * | 2010-12-03 | 2013-12-21 | Mh Solar Co Ltd | Hybrid solar energy power system |
| TWI420782B (en) * | 2010-12-06 | 2013-12-21 | Mh Solar Co Ltd | A electronic device with self power generation |
| TWI420781B (en) * | 2010-12-06 | 2013-12-21 | Mh Solar Co Ltd | A portable solar cell device with self-power generation |
| CN102646749A (en) * | 2011-02-18 | 2012-08-22 | 美环光能股份有限公司 | Manufacturing method of vertical multi-junction solar cell |
| CN103165742B (en) * | 2011-12-16 | 2016-06-08 | 清华大学 | The preparation method of solar cell |
| CN103165690B (en) | 2011-12-16 | 2015-11-25 | 清华大学 | Solar cell |
| CN103165719B (en) * | 2011-12-16 | 2016-04-13 | 清华大学 | Solar cell |
| CN103178137B (en) * | 2011-12-22 | 2016-04-13 | 清华大学 | Solar battery group |
| RU2487437C1 (en) * | 2012-02-02 | 2013-07-10 | Федеральное государственное унитарное предприятие "Всероссийский Электротехнический институт им. В.И. Ленина" (ФГУП ВЭИ) | Photoelectronic element |
| WO2014100707A1 (en) * | 2012-12-20 | 2014-06-26 | The Trustees Of Boston College | Methods and systems for controlling phonon-scattering |
| TWI513018B (en) * | 2013-06-28 | 2015-12-11 | Mh Gopower Company Ltd | Solar cell having an anti-reflective layer and method of manufacturing the same |
| TWI513017B (en) * | 2013-06-28 | 2015-12-11 | Mh Gopower Company Ltd | Solar cell having a passivation layer and method of manufacturing the same |
| US9786800B2 (en) * | 2013-10-15 | 2017-10-10 | Solarworld Americas Inc. | Solar cell contact structure |
| CN105261659A (en) * | 2015-11-12 | 2016-01-20 | 天津三安光电有限公司 | Solar cell and manufacturing method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4082570A (en) * | 1976-02-09 | 1978-04-04 | Semicon, Inc. | High intensity solar energy converter |
| US4332973A (en) * | 1974-11-08 | 1982-06-01 | Sater Bernard L | High intensity solar cell |
| US4516314A (en) * | 1974-11-08 | 1985-05-14 | Sater Bernard L | Method of making a high intensity solar cell |
| CN101101933A (en) * | 2007-07-13 | 2008-01-09 | 南京大学 | Setup method for indium-gallium-nitride p-n node type multi-node solar battery structure |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4193081A (en) * | 1978-03-24 | 1980-03-11 | Massachusetts Institute Of Technology | Means for effecting cooling within elements for a solar cell array |
| US4996577A (en) * | 1984-01-23 | 1991-02-26 | International Rectifier Corporation | Photovoltaic isolator and process of manufacture thereof |
| US4634641A (en) * | 1985-07-03 | 1987-01-06 | The United States Of America As Represented By The United States Department Of Energy | Superlattice photoelectrodes for photoelectrochemical cells |
| JP2784841B2 (en) * | 1990-08-09 | 1998-08-06 | キヤノン株式会社 | Substrates for solar cells |
| JPH0797653B2 (en) * | 1991-10-01 | 1995-10-18 | 工業技術院長 | Photoelectric conversion element |
| US5261969A (en) * | 1992-04-14 | 1993-11-16 | The Boeing Company | Monolithic voltage-matched tandem photovoltaic cell and method for making same |
| US5266125A (en) * | 1992-05-12 | 1993-11-30 | Astropower, Inc. | Interconnected silicon film solar cell array |
| JP3152328B2 (en) * | 1994-03-22 | 2001-04-03 | キヤノン株式会社 | Polycrystalline silicon device |
| JPH08125210A (en) * | 1994-10-24 | 1996-05-17 | Jiyousuke Nakada | Photodetector, photodetector array, and electrolysis device using them |
| JP2762993B2 (en) * | 1996-11-19 | 1998-06-11 | 日本電気株式会社 | Light emitting device and method of manufacturing the same |
| DE69818449T2 (en) * | 1998-01-23 | 2004-07-08 | Nakata, Josuke, Joyo | DEVICE FOR OPTICAL ELECTROLYSIS |
| JP2002170980A (en) * | 2000-11-30 | 2002-06-14 | Rasa Ind Ltd | Photoelectric cell for electrolysis of aqueous solution |
| US6611085B1 (en) * | 2001-08-27 | 2003-08-26 | Sandia Corporation | Photonically engineered incandescent emitter |
| JP2003124481A (en) * | 2001-10-11 | 2003-04-25 | Mitsubishi Heavy Ind Ltd | Solar battery |
| RU2210142C1 (en) * | 2002-04-17 | 2003-08-10 | Общество с ограниченной ответственностью Научно-производственный центр завода "Красное знамя" | Solar cell manufacturing process |
| CN1177375C (en) * | 2003-01-14 | 2004-11-24 | 河北科技大学 | Solar energy conversion photocell with multi-junction and poles joined |
| US7812249B2 (en) * | 2003-04-14 | 2010-10-12 | The Boeing Company | Multijunction photovoltaic cell grown on high-miscut-angle substrate |
| US7718888B2 (en) * | 2005-12-30 | 2010-05-18 | Sunpower Corporation | Solar cell having polymer heterojunction contacts |
| CA2657964C (en) * | 2006-06-14 | 2014-09-23 | Kyosemi Corporation | Rod-shaped semiconductor device |
-
2009
- 2009-08-12 CA CA2733976A patent/CA2733976C/en not_active Expired - Fee Related
- 2009-08-12 CN CN2009801392214A patent/CN102171840A/en active Pending
- 2009-08-12 RU RU2011109164/28A patent/RU2472251C2/en not_active IP Right Cessation
- 2009-08-12 CA CA2820184A patent/CA2820184A1/en not_active Abandoned
- 2009-08-12 CN CN201310219468.5A patent/CN103354247B/en not_active Expired - Fee Related
- 2009-08-12 EP EP09807234A patent/EP2327107A1/en not_active Withdrawn
- 2009-08-12 CN CN2013102194702A patent/CN103337547A/en active Pending
- 2009-08-12 MX MX2011001738A patent/MX2011001738A/en active IP Right Grant
- 2009-08-12 AU AU2009281960A patent/AU2009281960A1/en not_active Abandoned
- 2009-08-12 WO PCT/US2009/053576 patent/WO2010019685A1/en active Application Filing
- 2009-08-12 JP JP2011523143A patent/JP2012500474A/en active Pending
- 2009-08-12 CN CN201310219215.8A patent/CN103337546B/en not_active Expired - Fee Related
- 2009-08-12 BR BRPI0917838A patent/BRPI0917838A2/en not_active IP Right Cessation
- 2009-08-14 TW TW098127486A patent/TWI535042B/en not_active IP Right Cessation
-
2011
- 2011-02-13 IL IL211205A patent/IL211205A0/en unknown
-
2012
- 2012-10-02 RU RU2012141985/28A patent/RU2012141985A/en not_active Application Discontinuation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4332973A (en) * | 1974-11-08 | 1982-06-01 | Sater Bernard L | High intensity solar cell |
| US4516314A (en) * | 1974-11-08 | 1985-05-14 | Sater Bernard L | Method of making a high intensity solar cell |
| US4082570A (en) * | 1976-02-09 | 1978-04-04 | Semicon, Inc. | High intensity solar energy converter |
| CN101101933A (en) * | 2007-07-13 | 2008-01-09 | 南京大学 | Setup method for indium-gallium-nitride p-n node type multi-node solar battery structure |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102437208A (en) * | 2011-12-08 | 2012-05-02 | 上海太阳能电池研究与发展中心 | Mechanically assembled solar cell |
| CN103165718A (en) * | 2011-12-09 | 2013-06-19 | 清华大学 | Solar energy battery pack |
| CN103165718B (en) * | 2011-12-09 | 2016-12-14 | 清华大学 | Solar battery group |
| CN104302812A (en) * | 2012-03-30 | 2015-01-21 | 赢创工业集团股份有限公司 | Photoelectrochemical cell, system and process for light-driven production of hydrogen and oxygen with a photoelectrochemical cell, and process for producing the photoelectrochemical cell |
| US10006130B2 (en) | 2012-03-30 | 2018-06-26 | Evonik Degussa Gmbh | Photoelectrochemical cell, system and process for light-driven production of hydrogen and oxygen with a photoelectrochemical cell, and process for producing the photoelectrochemical cell |
| CN106328643A (en) * | 2015-06-29 | 2017-01-11 | 美环能股份有限公司 | Energy conversion device and power transistor module using the same |
| TWI583015B (en) * | 2015-07-01 | 2017-05-11 | 美環能股份有限公司 | A photovoltaic power converter receiver |
| CN114270000A (en) * | 2019-08-06 | 2022-04-01 | 特斯拉股份有限公司 | System and method for improving the color appearance of a solar roof |
| CN114270000B (en) * | 2019-08-06 | 2024-06-07 | 特斯拉股份有限公司 | System and method for improving the color appearance of a solar roof |
Also Published As
| Publication number | Publication date |
|---|---|
| RU2012141985A (en) | 2014-05-10 |
| MX2011001738A (en) | 2011-08-12 |
| CA2820184A1 (en) | 2010-02-18 |
| CN103354247A (en) | 2013-10-16 |
| IL211205A0 (en) | 2011-04-28 |
| CN103337547A (en) | 2013-10-02 |
| EP2327107A1 (en) | 2011-06-01 |
| BRPI0917838A2 (en) | 2017-02-14 |
| JP2012500474A (en) | 2012-01-05 |
| CA2733976A1 (en) | 2010-02-18 |
| CN103337546B (en) | 2017-03-01 |
| AU2009281960A1 (en) | 2010-02-18 |
| CA2733976C (en) | 2015-12-22 |
| RU2011109164A (en) | 2012-09-20 |
| TW201013951A (en) | 2010-04-01 |
| TWI535042B (en) | 2016-05-21 |
| CN103354247B (en) | 2016-10-05 |
| WO2010019685A1 (en) | 2010-02-18 |
| CN103337546A (en) | 2013-10-02 |
| RU2472251C2 (en) | 2013-01-10 |
| WO2010019685A4 (en) | 2010-05-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102171840A (en) | Photovoltaic cells with processed surfaces and related applications | |
| Moss et al. | A review of inorganic photoelectrode developments and reactor scale‐up challenges for solar hydrogen production | |
| Milichko et al. | Solar photovoltaics: current state and trends | |
| Goetzberger et al. | Photovoltaic solar energy generation | |
| US20100037937A1 (en) | Photovoltaic cell with patterned contacts | |
| US8293079B2 (en) | Electrolysis via vertical multi-junction photovoltaic cell | |
| Zhao et al. | Efficient coaxial nip heterojunction Sb2S3 solar cells | |
| Tawalare | Optimizing photovoltaic conversion of solar energy | |
| PSE | Fraunhofer institute for solar energy systems ise | |
| Zhang et al. | Adsorption and diffusion of lithium ions on lead‐free two‐dimensional halide perovskite surface toward energy storage applications | |
| Ontiri et al. | A Review of Emerging Photovoltaic Construction Technologies to Increase Efficiencies in Solar as a Renewable Energy Source | |
| Van Roosmalen | Molecular-based concepts in PV towards full spectrum utilization | |
| CN112086560B (en) | Laminated battery and preparation method thereof | |
| JP2012059664A (en) | Power generation system | |
| US20170084763A1 (en) | Semiconductor device | |
| CN102646749A (en) | Manufacturing method of vertical multi-junction solar cell | |
| Nandi et al. | Superhalogen modulation: an effective approach for minimizing light-induced halide segregation in MAPb (I 0.7 Br 0.3) 3 | |
| AU2013251282B2 (en) | Photovoltaic cells with processed surfaces and related applications | |
| Debney et al. | Terrestrial solar cells—present and future | |
| Ganose et al. | Photovoltaics | |
| Leaver | Impacts of Se Alloying and Diffusion on Optimal Fabrication Procedures for CdSe (x) Te (1− x) Solar Cells | |
| McEvoy et al. | Photovoltaic Cells for Sustainable Energy | |
| Sun | Development of Silver-Free Silicon Photovoltaic Solar Cells with All-Aluminum Electrodes | |
| Shaner | An Experimental and Technoeconomic Study of Silicon Microwire Arrays for Fuel Production Using Solar Energy | |
| Preiser et al. | 2 Solar Modules and Photovoltaic Systems |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: MH SOLAR CO., LTD. Free format text: FORMER OWNER: GREENFIELD SOLAR CORP. Effective date: 20121030 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; TO: TAIWAN, CHINA |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20121030 Address after: Two China Taiwan Kaohsiung City Road No. 61 Building 2 Bamboo Branch Road Branch Applicant after: Greenfield Solar Corp. Address before: ohio Applicant before: Greenfield Solar Corp. |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110831 |