CN106328643A - Energy conversion device and power transistor module using the same - Google Patents
Energy conversion device and power transistor module using the same Download PDFInfo
- Publication number
- CN106328643A CN106328643A CN201610497998.XA CN201610497998A CN106328643A CN 106328643 A CN106328643 A CN 106328643A CN 201610497998 A CN201610497998 A CN 201610497998A CN 106328643 A CN106328643 A CN 106328643A
- Authority
- CN
- China
- Prior art keywords
- energy conversion
- conversion device
- fin
- voltage
- energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 177
- 238000002955 isolation Methods 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 230000005669 field effect Effects 0.000 claims description 7
- 239000013307 optical fiber Substances 0.000 claims description 7
- 238000012546 transfer Methods 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 230000010165 autogamy Effects 0.000 claims description 3
- 229910000531 Co alloy Inorganic materials 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims 1
- 238000004891 communication Methods 0.000 abstract description 4
- 239000000306 component Substances 0.000 description 56
- 238000004134 energy conservation Methods 0.000 description 46
- 239000013078 crystal Substances 0.000 description 40
- 238000010586 diagram Methods 0.000 description 17
- 238000003491 array Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 9
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 8
- 229910017083 AlN Inorganic materials 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052582 BN Inorganic materials 0.000 description 5
- 238000001816 cooling Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 230000005405 multipole Effects 0.000 description 5
- 230000005622 photoelectricity Effects 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000004519 grease Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- -1 teleoseal Chemical compound 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000110 cooling liquid Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
An energy conversion device and a power transistor module using the same are provided; the energy conversion device in electrical communication with at least one fin is provided to output multiple voltages. The at least one fin which is originating from inside the energy conversion device, which is formed from a metal contact disposed between energy conversion device components, and which is spaced with a first end contact and a second end contact. A power transistor module includes at least one transistor, a gate driver and the energy conversion device. The gate driver is configured to drive the at least one transistor. The energy conversion device is configured to supply isolated voltages to the gate driver. The energy conversion device can provide a noise-free voltage source and the voltage output by the energy conversion device can be regarded as a transformerless isolated voltage, thus, the energy conversion device can be used to replace an isolation transformer inside the power transistor module.
Description
Technical field
The present invention is related to a kind of energy conversion device, refers in particular to a kind of energy conversion device with the output of many pole tensions
With the power transistor module using this energy conversion device.
Background technology
Multipole voltage source can be applicable among various different field, including charging device or power transistor module, and
This power transistor module can be insulation lock bipolar transistor (Insulated Gate Bipolar Transistor,
IGBT) or one metal oxide semiconductcor field effect transistor (Metal-Oxide-Semiconductor Field Effect
Transistor, MOSFET).Conventional multipole voltage source can be used alone accumulator or by series connection accumulator mode multipole is provided
Voltage.But, this battery is excessively heavy and only can store a small amount of electric power, causes being used in high-voltage charging device or power is brilliant
Body tube module.
High-Voltage Insulation lock bipolar transistor is generally used in the module of voltage range 15 to 3000V (or higher), its
For inverter, transducer, power supply unit, motor controller and traction application.And at least need to use a gate drive
Device, in order to drive this insulation lock bipolar transistor.Particularly, this gate pole driver be applicable to the inverter that need to electrically isolate with
Transducer.This battery cannot provide the isolation voltage needed for this gate pole driver.Therefore, an isolating transformer need to be connected to this
Gate pole driver, in order to isolate its output voltage.This insulation lock bipolar transistor can be because of should the need of gate pole driver whereby
Ask and be switched fast the state of Push And Release.
It is said that in general, this isolating transformer has magnetic core, offer is provided between each circuit and is galvanically isolated.But, due to
High voltage isolation transformer generally needs customized design, therefore frequently results in cost of manufacture too high.Additionally, it is higher in order to obtain
Isolation voltage, the design of high voltage isolating transformer is the heaviest.Such as, there is the isolating transformer of 20kV isolation voltage
Typical sizes is 200 millimeters × 200 millimeters × 200 millimeters, and its weight is about 5.5 kilograms.
This vertical many junctions (Vertical Multi-junction, VMJ) battery is a high voltage energy conversion device,
It has small size and the characteristic such as lightweight, and the output voltage of this VMJ battery is higher than single junction battery.It is said that in general,
The VMJ battery of 10 millimeters × 10 millimeters can produce higher than 25 volts under the conditions of a solar illumination, and under similarity condition, tradition is single
One junction battery only can produce a small amount of volt.Additionally, tradition VMJ battery only can be by two terminal contacts output voltages.Therefore, produce
The output of many pole tensions is a significant challenge for VMJ battery now.
In view of this, it is necessary to propose a kind of energy conversion device, many pole tensions can be exported, and replace this power transistor
The isolating transformer of module.
Summary of the invention
The present invention proposes a kind of energy conversion device, and it is electrically connected and exports many pole tensions with at least one fin,
And respectively this at least one fin includes that [1] generates from the inner side of this energy conversion device, [2] generate autogamy and are placed in the conversion of this energy
A metallic contact in device feature, and [3] are spaced with the first terminal contacts and the second terminal contacts.
The present invention also proposes a power transistor module, and it includes at least one transistor；One gate pole driver, and one should
Energy conversion device.This gate pole driver is configured to drive this at least one transistor.This energy conversion device be configured to provide for every
Ionization voltage is to this gate pole driver.
This energy conversion device can contact at least one fin and different terminal contacts or contact other fins, exports whereby
Many pole tensions.This energy conversion device can provide muting voltage source, and the voltage that this energy conversion device is exported can quilt
It is considered as transformerless isolation voltage.Therefore, this energy conversion device is substituted for the isolation within power transistor module
Transformator.
Accompanying drawing explanation
Fig. 1 show the side schematic view of one side irradiation vertical many junction photovoltaic receptor array of prior art.
Fig. 2 show the side schematic view of a battery out of the ordinary of ㄧ vertical many junction photovoltaic receptor array of prior art.
Fig. 3 show the profile of vertical many junction photovoltaic receptor array of prior art.
Fig. 4 show the profile of an energy conversion device of prior art.
Fig. 5 show the close-up cross-sectional view of an energy conversion device of prior art.
Fig. 6 show the radiating fin of the present invention and the schematic diagram of energy conversion device.
Fig. 7 show the heat energy conveying flow figure of the heat energy transition components of prior art.
Fig. 8 show the heat energy conveying flow figure of the cooled energy conversion device of the present invention.
Fig. 9 to Figure 11 show three-dimensional energy conversion or the inclined-plane schematic diagram of photoelectric subassembly crystal ingot of three kinds of prior aries.
Figure 12 show the inclined-plane schematic diagram of an energy conversion device of the present invention.
Figure 13 show the close-up schematic view of an energy conversion device of the present invention.
Figure 14 Yu Figure 15 show the inclined-plane schematic diagram being configured at an energy conversion device above a hott bed of the present invention.
Figure 16 show the side schematic view being configured at an energy conversion device above a hott bed of the present invention.
Figure 17 show the inclined-plane schematic diagram that the component bottom of the present invention has the energy conversion device of a radiator array.
Figure 18 show the flow chart of the heat transfer of the present invention.
The inclined-plane of energy conversion device and a radiator array and radiator supporting structure that Figure 19 show the present invention shows
It is intended to.
Figure 20 show the part sectioned view of the energy conversion device of the three-dimensional photoelectric subassembly crystal ingot of the present invention.
Figure 21 show the operation temperature comparing prior art and disclosed energy conversion device with incidence too
The trend explanatory diagram of sunlight strength.
Figure 22 with Figure 23 show double energy conversion device of hott bed that uses of the present invention and shows with the different inclined-plane of radiator
It is intended to.
Figure 24 show the perspective view of an energy conversion device of one embodiment of the invention.
Figure 25 show the perspective view of an energy conversion device of one embodiment of the invention.
Figure 26 show the schematic diagram of an energy conversion device of one embodiment of the invention.
Figure 27 show the schematic diagram of an energy conversion device of one embodiment of the invention.
Figure 28 show the perspective view of a power transistor module of one embodiment of the invention.
Figure 29 show the top view of an energy conversion device of one embodiment of the invention.
Figure 30 show the waveguide of one embodiment of the invention profile to homogeneous energy conversion device.
In figure:
100 vertical many junction photovoltaic receptors；
110 solaodes；
120 planes of incidence；
130 anodes；
140 negative electrodes；
150 heat conduction paths；
200 solaodes；
300 vertical many junction photovoltaic receptors；
310 solaodes；
320 hot junctions；
330 heat conduction paths；
340 boron nitride hot epoxy resins；
350 aluminium nitride circuit boards；
360 boron nitride hot epoxy resins；
370 hot copper pipes；
400 energy conservation component；
410 energy conversion elements；
420 radiators；
421 radiating fin arrays；
422 fins；
430 hot junctions；
440 heat conduction paths；
600 energy conservation component；
610 energy conversion elements；
620 radiators；
621 radiating fin arrays；
622 fins；
630 heat conduction paths；
640 module boundaries；
700 heat energy transmission；
710 energy conservation component；
720 hot junctions；
730 radiator bases；
740 radiating fins；
800 heat energy transmission；
810 energy conservation component；
820 radiating fins；
The square crystal ingot of 900 three-dimensional energy conversions；
910 vertical many junction photovoltaic receptors；
920 planes of incidence；
930 first relative crystal ingot surfaces；
940 second relative crystal ingot surfaces；
950 incident wave beams；
The trapezoidal crystal ingot of 1000 three-dimensional energy conversions；
1010 vertical many junction photovoltaic receptors；
1020 planes of incidence；
1030 first relative crystal ingot surfaces；
1040 second relative crystal ingot surfaces；
1050 incident wave beams；
1060 reflected beam；
The triangle crystal ingot of 1100 three-dimensional energy conversions；
1110 vertical many junction photovoltaic receptors；
1120 planes of incidence；
1130 first relative crystal ingot surfaces；
1140 second relative crystal ingot surfaces；
1150 incident wave beams；
1200 energy conservation component；
1210 flat vertical many junction photovoltaic solaode array；
1220 radiators；
1221 radiating fin arrays；
1222 fins；
1230 contact pin；
1240 contact pin；
1250 heat conduction paths；
1400 energy conservation component；
1410 hott beds；
1420 radiating fin arrays；
1421 fins；
1430 contact pin；
1440 contact pin；
1450 heat conduction paths；
1500 energy conservation component；
1510 hott beds；
1520 radiating fin arrays；
1521 fins；
1530 contact pin；
1540 contact pin；
1550 converse light microscopics；
1700 energy conservation component；
1710 radiating fin arrays；
1711 fins；
1720 contact pin；
1730 contact pin；
1740 heat conduction paths；
1800 energy conversion elements；
1810 plural number fins；
1820 air ambients；
1830 thermal convection currents；
1840 conduction of heat directly contacted；
1900 energy conservation component；
1910 radiating fin arrays；
1911 fins；
1920 contact pin；
1930 contact pin；
2000 three-dimensional energy photoelectric subassembly crystal ingots；
2010 energy conservation component；
2020 radiating fin arrays；
2021 fins；
2030 contact pin；
2040 contact pin；
2050 passages；
The energy conservation component of 2200 pairs of hott beds；
2210 main hott beds；
2211 wire hott beds；
2220 radiating fin arrays；
2221 fins；
2230 contact pin；
2240 contact pin；
10 energy conversion devices；
10B bottom surface；
10S end surface；
10T topsheet surface；
12 energy conversion device parts；
14 first terminal contacts；
16 second terminal contacts；
18 metallic contacts；
20 energy conversion devices；
20B bottom surface；
20S end surface；
20T topsheet surface；
22 energy conversion device parts；
24 first terminal contacts；
26 second terminal contacts；
28 metallic contacts；
30 power transistor modules；
31 transistors；
32 gate pole drivers；
33 energy conversion devices；
332 energy conversion device parts；
334 first terminal contacts；
336 second terminal contacts；
338 metallic contacts；
33S end surface；
34 radiators；
35 hot junction materials；
36 laser source parts；
362 optical fiber links；
364 lasers；
37 waveguides；
40 energy conversion devices；
42 vertical many junctions batteries；
42S topsheet surface；
422 terminal contacts；
424 battery junctions；
426 metallic contacts；
44 lead-in wires；
46 assistant supports；
462 conductive connection pads；
D distance；
F fin；
F1 the first fin；
F2 the second fin；
V1 the first voltage；
V2 the second voltage；
V3 tertiary voltage；
V4 the 4th voltage；
W laser light.
Detailed description of the invention
The invention will be further described with specific embodiment below in conjunction with the accompanying drawings, so that those skilled in the art is permissible
It is better understood from the present invention and can be practiced, but illustrated embodiment is not as a limitation of the invention.Such as U.S. Publication patent
A kind of energy conversion device being formed radiator by least one fin disclosed in US 14/530619.But, this energy is changed
Device is electrically connected with at least one fin, in order to export many pole tensions.
The summary of the invention of this Fig. 1 to Figure 23 disclosed in U.S. Publication patent US 14/530619 will be to draw with embodiment
With merging mode reference.
Turn now to Fig. 1, the side schematic view of one side irradiation vertical many junction photovoltaic receptor array of prior art.
Wherein, vertical many junction photovoltaic receptor 100 comprises one group of solaode distinctly connected 110, and it allows a plane of incidence
120 irradiations being exposed to an incident wave beam, as one assemble sunlight, a laser wave beam or other there is energy Flow characteristic
A wave beam.This vertical many junction photovoltaic receptor 100 has paired photoelectricity feed side, and this crosses the photoelectricity feed side of assembly
Comprise anode 130 and a negative electrode 140.In the photovoltaic energy conversion that high intensity sunlight is occurred, then will be by this group
Part produces and exports a relatively large heat conduction path 150.
Turn now to Fig. 2, a solaode 200 out of the ordinary of vertical many junction photovoltaic receptor array of prior art
Side schematic view.Wherein, P+, N and N+ represent that severe expolasm is adulterated, and as a example by silicon semiconductor, n+ Yu p+ represents that doping is enough
Expolasm also makes its body resistivity be positioned at the scope of mOhm-cm, and the body resistivity of extrinsic semiconductor is then positioned at the scope of Ohm-cm.
Turn now to Fig. 3, the profile of vertical many junction photovoltaic receptor array of prior art.Wherein, this heat passes
Cross the dielectric layer of this vertical many basal planes battery guiding path 330 isotropic directivity, and the medium that this heat conduction path 330 is crossed
Layer sequentially comprise borazon hot epoxy resin 340, aluminium nitride circuit board 350, another boron nitride hot epoxy resin 360 and
More than one heat dissipation copper pipe 370 or a similar radiating subassembly.The selection of this radiating management material is partly led known to existing
Body component technology is determined, and its various three-dimensionals being not limiting as the present invention or flat photoelectric subassembly crystal ingot and energy conversion group
The development of part.
Turn now to Fig. 4, the profile of an energy conservation component of prior art.Wherein, an energy conservation component 400 is wrapped
Containing three groups of energy conversion elements 410 (s, g and d), such as source electrode, gate and the drain of metal-oxide half field effect transistor.This energy is changed
The overall unicity structure that assembly 400 is had self, i.e. be enough to the demand of full external cooling, and this energy conservation component and
Radiator 420 (HEAT SINK) is connected to thermojunction 430.
This hot junction 430 can comprise heat-conducting silicone grease, gel, heat sink compound or heat eliminating medium known to other.Heat conduction
Silicone grease is a Heat Conduction Material being electrically insulated, and it has the advantage eliminating bubble, and can comprise the mixing of various polymerizable liquid-crvstalline
Thing and the heat conductive filler being electrically insulated.Prior art through frequently with epoxy resin, silicones, urethanes and
Acrylate will separate with aluminium nitride and microminiaturization in order to postponing aluminium oxide, boron nitride, zinc oxide.And this hot junction 430 will
Comprise known ARC or other can provide the material of same design target.
The radiator 420 that prior art is used comprises radiating fin array 421, and its design will increase face, surface with structure
Amass and reduce hot group, can be scattered and lost more heat energy by known thermal convection current and heat radiation mode.A heat dissipation path shown in Fig. 4
440 with represented by black arrow, and it crosses this hot junction 430 and passes through this radiator 420, and last via this radiating fin number
Thermal energy radiation is gone out by each fin 422 of group 421.
Turn now to Fig. 5, the close-up cross-sectional view of an energy conservation component of prior art.When this energy conservation component 400
When performing energy conversion, this energy conservation component 400 performs the energy carrier needed for necessity operation (such as icon by comprising this assembly
E-Yu the h ν shown), and this energy carrier will be limited by this energy conservation component 400.
Turn now to Fig. 6, the radiating fin of the present invention and the schematic diagram of energy conservation component.In the present invention, an energy
The structure of transition components 600 and the design of shape transfer thermal energy to more than one fin 622, and at least some of fin 622 will
Form a radiator 620, and respectively this fin 622 includes that [1] generates from the inner side of this energy conservation component, and the transmission of its energy
Cross a module boundaries 640 (device boundary)；[2] formed by an energy conversion elements 610, as an array type hangs down
Each layer of straight many junction photovoltaic receptor, the source electrode of a metal-oxide half field effect transistor, gate and drain, or an array type is bipolar
Property the emitter-base bandgap grading of junction transistor, collector and base stage, and this energy conversion elements is intrinsic parts, and [3] distinctly support should
Energy carrier transmission needed for the function of energy conservation component 600.In a heat conduction path 630, heat energy is by neighbouring energy
Converting member 610 exports, and it is not required to cross this assembly by thermojunction and export.
Turning now to Fig. 7, the heat energy of the heat energy transition components of prior art transmits 700 flow charts.This heat energy is turned by energy
Changing assembly 710 and be transferred to a radiator base 730 via thermojunction 720, this radiator base 730 is arranged at the conversion of this energy
The outside of assembly 710.By this radiator base 730, this heat energy can be effectively scattered and lost by an array type radiating fin 740 and
Go out.The radiator that prior art is used is connected to a radiator base 730 by thermal bonding or mechanical type juncture, and
The thermojunction 720 formed will increase thermal resistance, and its heat conduction path will cross this hot junction 720 formed, and then reduce
The heat flux of this radiator.
Turning now to Fig. 8, the heat energy of the cooled energy conservation component of the present invention transmits 800 flow charts, and wherein, this heat passes
The energy that driving part is directly generated by guiding path, is transferred to radiating fin 820 by energy conservation component 810, without
Any radiator base, hot junction or heat-conducting silicone grease.
The application of this energy conservation component 810 is in order to process substantial amounts of energy input and output, such as vertical many junction photovoltaic
The energy acceptance of solaode array and other semiconductor lasers and transmission.
Turn now to Fig. 9 to Figure 11, the three-dimensional energy conversion of three kinds of prior aries or the inclined-plane signal of photoelectric subassembly crystal ingot
Figure.Wherein, incident wave beam 950,1050,1150 is irradiated in the plane of incidence 920,1020,1120 of this crystal ingot.Fig. 9 illustrates more than one
The square crystal ingot 900 that individual plane wafer or solaode are formed, Figure 10 illustrates by more than one plane wafer or solar energy
The trapezoidal crystal ingot 1000 that battery is formed, and Figure 11 explanation is formed by more than one plane wafer or solaode 1
Dihedral crystal ingot 1100.The shape of this photoelectricity or vertical many junction photovoltaic receptor crystal ingot can change according to design requirement, mat
This strengthens the incident light quantity of its edge illumination.According to the design of this waveguide receptor, maximize converged incidence by making it
Light quantity.Respectively this three-dimensional photoelectric subassembly crystal ingot and/or three-dimensional photovoltaic screen receptor crystal ingot can comprise one first relative crystal ingot surface 930,
1030,1130 crystal ingot surface 940,1040,1140 relative with one second, this first relative crystal ingot surface 930,1030,1130 with
This second relative crystal ingot surface 940,1040,1140 lays respectively at this plane wafer or the opposing end portions of solaode.At this
In three-dimensional photovoltaic screen receptor crystal ingot, this first relative crystal ingot surface 930,1030,1130 output one positive charge (+) a surface,
And a surface of this second relative crystal ingot surface 940,1040,1140 output one negative charge (-), and this three-dimensional photovoltaic screen receptor
Crystal ingot is formed with identical photovoltaic processing mode concatenation by photovoltaic solar cell out of the ordinary.This three-dimensional photovoltaic screen receptor crystal ingot
1000 also have another executive mode, and i.e. one beamformer output 1060 is by by one of this three-dimensional photovoltaic screen receptor crystal ingot 1000
Penetrate face 1020 to export.Application as disclosed in United States Patent (USP), a beamformer output being similar to communications beam may be three-dimensional by one
Photoelectric subassembly crystal ingot generates, and otherwise the entity apparatus within this energy conservation component may absorb and be produced according to communication need
A beam energy.One output energy conservation component crystal ingot can comprise known output precision, such as any light emitting diode, a solid-state
Laser diode, a three-dimensional laser, a vertical external wall emission laser, a vertical cavity wall emission laser or any there is class
Assembly like function.
Constituting and the known technology operated disclosed in the past of this vertical many junction photovoltaic receptor.Thickness is 250 micro-
The Silicon Wafer of rice and doping p+, n and n+ can form, by the technology such as metallization, storehouse and alloy, the multilamellar that a thickness is 1 centimeter
Storehouse.The storehouse of this diffusion wafer is via producing about 1000 groups of vertical multi-junction solar cells after cutting in order to perform high electricity
The operation of pressure, wherein, the size of each vertical multi-junction solar cells is about 1 centimeter × 1 centimeter × 0.05 centimeter, and it comprises
The battery unit of 40 groups of concatenations.The silicon face irradiating sunlight will be removed coarse surface by known etching mode, and with
One known anti-reflecting layer coating is processed.
After above-mentioned processed, vertical many junction photovoltaic receptor of one 2 centimeters × 2 centimeters can be formed, at height
Under the conditions of intensity irradiation, this vertical many junction photovoltaic receptor can produce the voltage of 80 to 100 volts, and generates 200 watts
The electric current of 2 amperes of power.With conventional photovoltaic solaode in comparison, produce identical power and then need up to 180 amperes
Electric current, it causes the most serious electrical management problem.
This icon only simple illustration crystal ingot structure, and photoelectricity/energy conservation component or the energy disclosed in prior art turns
Change the associated components that assembly crystal ingot can supplement, comprise lateral reflector (side reflectors), lens (lens) or other foldings
Penetrate assembly (refractive elements), sensor (sensors) and collimating instrument (collimators), its without departing from
The scope of the claims of the present invention and being shown in appended claims.
Turn now to Figure 12, the inclined-plane schematic diagram of an energy conservation component 1200 of the present invention.This energy conservation component
1200 have a flat vertical many junction photovoltaic solaode array 1210 and radiator 1220, and wherein, this energy is changed
The outfan (anode and negative electrode) of assembly 1200 is respectively contact pin 1230 and contact pin 1240.
In the radiating fin array 1221 of this radiator 1220, each fin 1222 is prominent and is formed from this energy conversion group
Part 1200 is internal, and it distinctly supports that the energy carrier needed for the function of this energy conservation component 1200 transmits.
Turn now to Figure 13, the close-up schematic view of an energy conservation component of the present invention, its illustrate that a heat energy is scattered and lost one
Heat conduction path 1250, this heat conduction path 1250 is directly output to external environment condition along an energy conversion elements.
Turning now to Figure 14 and Figure 15, the present invention is configured at an energy conservation component 1400 above a hott bed 1410
Inclined-plane schematic diagram.Wherein, this heat conduction path 1450 is directly into this hott bed 1410, and uses thermal convection current mode to increase heat radiation
Usefulness, and constituting of this hott bed 1410 is selected from aluminum, copper or other heat conductors known in the art.Figure 15 illustrates the present invention's
One embodiment being similar to assembly, it additionally comprises a fixing converse light microscopic 1550, and this converse light microscopic 1550 crosses this energy
Amount transition components 1500, its demand being used to meet location in the application of electric power wave beam.
Turning now to Figure 16, the side being configured at the energy conservation component 1500 above a hott bed 1510 of the present invention shows
It is intended to.This converse light microscopic 1550 is configured in the inside or below of this energy conservation component 1500, thereby can protect this retroreflective
Mirror 1550 and various semiconductor subassembly, such as transparent silicon thin film.
Turning now to Figure 17, the component bottom of the present invention has the inclined-plane of the energy conservation component 1700 of a radiator array
Schematic diagram.Wherein, the direction of this heat conduction path 1740 is downward, and the structure of this energy conservation component 1700 can be in conjunction with above-mentioned
This radiating fin array 1710 on highlighted component border.
Make an energy conservation component highlight a fin according to disclosed, then can reach more preferably heat energy and be scattered and lost effect
Really.Turn now to Figure 18, the flow chart of the heat transfer of the present invention.The flow process of this heat transfer includes that step [1] is described to have one
The heat conduction path of the energy conversion elements 1800 of plural number fin 1810, and [2] are existing according to those skilled in the art institute
Technology, via the mode such as conduction of heat 1840 being exposed to air ambient 1820, thermal convection current 1830 or directly contact, it is achieved
The heat transfer of this energy conservation component 1800.
Turn now to Figure 19, the energy conservation component 1900 of the present invention and a radiator array and radiator supporting structure
Inclined-plane schematic diagram.This radiator supporting structure is expressed as 1920 and 1930, and it can have the function of component touch concurrently, such as optics
Character contacts or in electrical contact.
Turn now to Figure 20, the part section of the energy conservation component 2010 of the three-dimensional photoelectric subassembly crystal ingot 2000 of the present invention
Figure.It illustrates the inside of this radiator supporting structure 2030,2040 and outside cooling system, and this energy conservation component 2000 can be through
Being formed a passage 2050 by boring, it is for the flowing of circulating cooling liquid, such as cooling water or cooling oil.
Disclosed technology has the advantage obtaining relatively low assembly operation temperature, as being applied to semiconductor subassembly
Vertical many junction photovoltaic array of crystal ingot, it can be exposed to stable operation under gathering sunlight.Turn now to Figure 21, the most existing
Technology and the operation temperature of disclosed energy conservation component and the trend explanatory diagram of incident sunlight intensity.Wherein,
Use this photovoltaic receiver battery array of disclosed radiator, can have relatively under a given incident sunlight power
Low operation temperature.Use the solaode array that prior art is controlled, the operation temperature under 45 times of sunlights
Reaching 52 DEG C, and use disclosed solaode array, the operation temperature under 68 times of sunlights is then
51.9 DEG C, its usefulness can solve the problem that solaode array cannot bear high-temperature operation.At a typical human machinery incoming wave
In the application of bundle, it need to reach the wave beam of 70 watts by a laser input power, and new application design overriding concern because of
Element is the control of operation power.
Another embodiment of the present invention comprises a customized hott bed, turns now to Figure 22 and Figure 23, the employing of the present invention
The energy conservation component 2200 of double hott beds and the different inclined-plane schematic diagram of radiator.It is large-scale that one main hott bed 2210 is represented by one
Block, it can be made by copper metal, and a less wire hott bed 2211 can be made by indium metal and insulating coating,
This insulating coating can be an ARC being electrically insulated, and it forms short circuit in order to protect this energy conservation component.Existing skill
Art uses the assembly made by an indium hott bed can strengthen the heat dissipation of each fin 2221 designed by the present invention.And the heat conduction of indium
Coefficient does not produce change with temperature.
This hott bed 2210 can be made by various known materials, such as aluminium nitride or boron nitride.Disclosed should
The energy conservation component 2200 of double hott beds is mountable to aluminium nitride substrate, and this installation can comprise commercial thermal conductance pad, such as Laird
T-pregTM made by PLC company.According to the restriction of design requirement, can freely use surrounding air or an indium contact medium cold
But the fin of the present invention.For the application of the electric power wave beam of unmanned machinery, the cooling of abundance can be carried out by surrounding air.Right
In the application of mobile communication device, using the present invention to change even laser energy into required electric power, and an indium hott bed can be integrated into
In the system of this action communication device.
In experiment flow, without any cooling fan in order to the heat energy of this radiator that is scattered and lost.By one 50 layer stacks and 10 ×
Silica-based vertical many junction photovoltaic device of 10 mm sqs are configured on an aluminium nitride hott bed, and it uses a T-pregTM thermal conductance
Pad.This assembly will compare with disclosed embodiment, and it uses the assembly of 10 × 10 identical mm sqs,
As shown in figure 14, this assembly is by the fin of employing 10 × 12 mm sq.And ambient temperature be set as 30 DEG C, an and exciting light
Source is the laser of 35 watts and 915 nm wavelength.And this temperature measures the back side institute of this aluminium nitride substrate hott bed in thermocouple mode
Obtain.
In this optics feed side part, it is not limited need to have an electronics feed side, a light of the present invention
Learning feed side can be an optical transducer, optical module and the assembly with similar functions.One ruby crystal will be as one
Crystal ingot performs the transmission of high intensity light, and this light can be transmitted by a disclosed photoelectricity feed side.
This disclosed radiator supporting structure can be made up of In Crystal Solid Copper, and justification becomes one 5 × 5 × 5 vertical public affairs
The block divided.This invention can be applicable to automatic oiling platform, such as high-altitude unmanned vehicle (Micro Unmanned
Aerial Vehicle, MUAV), machine detection carrier or other remote control units.
This waveguide surface and energy conservation component surface can process via coating waste water so that it is meet various predetermined wavelength
The demand of incident wave beam, comprise penetration, surface adhesion force, high thermal conductivity coefficient and the thermal coefficient of expansion matched.This is former
Sublayer depositing (Atomic Layer Deposition, ALD) processing procedure can be used for the processed of each coating layer, comprises aluminium oxide
(Al2O3), aluminium nitride (AlN) or other oxide alloy.
Additionally, this wafer can comprise the advanced carbonization as made by Dow Coming (Midland, Michigan, USA)
Silicon (Silicon Carbide, SiC).Owing to conventional silicon wafer is with close to physics limit, the evolution of material source and highly crystalline quality
Sic wafer better characteristic can be provided, form broader electronics energy gap, more preferably whole efficiency and higher
Thermal conductivity coefficient.Above-mentioned character will attract more multiple commercial vendors, comprise diode, product that photovoltaic receiver is relevant to solaode
Industry.
Turn now to Figure 24, the perspective view of an energy conversion device.Wherein, an energy conversion device 10 exportable multipole electricity
Pressure.This energy conversion device is electrically connected with at least one fin F.In a disclosed embodiment, this energy
Conversion equipment 10 forms conduction of heat with this at least one fin F and is connected.
This energy conversion device 10 comprises more than one energy conversion device parts 12；One first terminal contacts 14；One second
Terminal contacts 16；One metallic contact 18.In this embodiment, this energy conversion device 10 is vertical many junction (Vertical
Multi-junction, VMJ) battery, and the battery that these energy conversion device parts 12 are this vertical many junctions (VMJ) battery connects
Face.These energy conversion device parts 12 for organize storehouse more, and these energy conversion device parts 12 all have towards equidirectional
Positive charged terminal, or the positive pole that these energy all special changing device parts 12 have other sides of this metallic contact 18 dorsad fills
Electricity end.In another embodiment of the invention, other sides of this these energy conversion device parts 12 this metallic contact 18 dorsad,
When wherein this terminal contacts 14,16 is equal with this metallic contact 18 junction number each other, each set of cells can be allowed in parallel.Additionally,
One high power laser can be as the light source of this vertical many junctions battery.
These energy conversion device parts 12 are between this first terminal contacts 14 and this second terminal contacts 16.This metal
Contact 18 is arranged between these energy conversion device parts 12.In another disclosed embodiment, this metallic contact
18 selected from aluminum, teleoseal, copper or other conductive metal.
This at least one fin F generates from the inner side of this energy conversion device 10.In another disclosed embodiment
In, this at least one fin F generates the metallic contact 18 that is placed in these energy conversion device parts 12 of autogamy, and with this first end
Tip node 14 and this second terminal contacts 16 are spaced.Additionally, this energy conversion device 10 has end surface 10S；One
Topsheet surface 10T；One bottom surface 10B.Wherein, this at least one fin F protrudes from this end surface 10S.Taken off in the present invention
In another embodiment shown, this at least one fin F protrudes from this topsheet surface 10T or this bottom surface 10B.Taken off in the present invention
In another embodiment shown, this at least one fin F is not out the other end of this energy conversion device 10 (VMJ battery), and
And flush with these energy conversion device parts 12.
In another disclosed embodiment, this at least one fin F is to share ground connection fin, and it is by dorsad
This fin F of other sides of these energy conversion device parts 12 performs running.Therefore, this first terminal contacts 14 is shared with this
Ground connection fin F exports one first voltage V1, and this second terminal contacts 16 exports one second voltage with this shared ground connection fin F
V2.Sharing ground connection to make this energy conversion device 10 have, a terminal contacts of this fin F (sharing ground connection) need to be somebody's turn to do dorsad
Another terminal contacts of fin F (share with ground connection) also has multiple junction.And this first terminal contacts 14 and this shared ground connection fin
There is between sheet F distance D.This distance D is the part of this energy conversion device 10 total length.This first voltage V1 and this distance D
There is a proportional relation, and this second voltage V2 has an inverse relation with this distance D.
By utilizing a fin F, this energy conversion device 10 can produce two pole tension outputs, the i.e. first voltage V1 and second
Voltage V2.Additionally, by the quantity increasing fin F, more multi-output voltages can be produced whereby.
Turn now to Figure 25, the perspective view of an energy conversion device.Wherein, an energy conversion device 20 is in order to export multipole
Voltage.This energy conversion device 20 is electrically connected with one first fin F1 and one second fin F2.Disclosed
Another embodiment in, this energy conversion device 20 also forms conduction of heat with this first fin F1 and this second fin F2 and is connected.
This energy conversion device 20 comprises more than one energy conversion device parts 22；One first terminal contacts 24；One second
Terminal contacts 26；One metallic contact 28.In this embodiment, this energy conversion device 20 is vertical many junction (Vertical
Multi-junction, VMJ) battery, and the battery that these energy conversion device parts 22 are this vertical many junctions (VMJ) battery connects
Face.
These energy conversion device parts 22 are between this first terminal contacts 24 and this second terminal contacts 26.This metal
Contact 28 is arranged between these energy conversion device parts 22.In another disclosed embodiment, this metallic contact
28 selected from aluminum, teleoseal, copper or other conductive metal.
This first fin F1 and this second fin F2 is spaced each other, and generates in this energy conversion device 20
Side.In this embodiment, this first fin F1 and this second fin F2 generate from different metallic contacts 28, and with this first end
Tip node 24 and this second terminal contacts 26 are spaced.Additionally, this energy conversion device 20 has end surface 20S；One
Topsheet surface 20T；One bottom surface 20B.Wherein, this first fin F1 and this second fin F2 protrudes from this end surface 20S.
In another disclosed embodiment, this first fin F1 and this second fin F2 can beyond this topsheet surface 20T or
This bottom surface 20B.Additionally, this first terminal contacts 24 has distance D with this first fin F1.
According to the configuration of this energy conversion device 20, by selecting the contact of diverse location with the different voltage of output.At this
In embodiment, this first terminal contacts 24 and the exportable one first voltage V1 of this first fin F1.This second terminal contacts 26 with
The exportable one second voltage V2 of this second fin F2.This first fin F1 and the exportable tertiary voltage V3 of this second fin F2.
This first voltage V1 and this distance D have a proportional relation, the summation of this second voltage V2 and this tertiary voltage V3
With this distance D, there is an inverse relation.
By utilizing this first fin F1 and this second fin F2, it is defeated that this energy conversion device 20 can produce three pole tensions
Go out, the i.e. first voltage V1, the second voltage V2 and tertiary voltage V3.But, if all junctions are all towards equidirectional, the most each voltage
To there is a different initial voltage.In response to above-mentioned configuration, this voltage will be applicable to different circuit, or by each other
Completely cut off and be applied to same circuits.Energy conversion device 20 disclosed in Figure 25 uses two groups of fins, is not intended to limit
The present invention is in described specific embodiment.
This energy conversion device 20 can provide muting voltage source, and the voltage that this energy conversion device 20 is exported can
It is considered transformerless isolation voltage.Therefore, this energy conversion device 20 is substituted within power transistor module
Isolating transformer.
Turn now to Figure 26, the schematic diagram of an energy conversion device.This energy conversion device 40 comprises a VMJ battery 42；
More than one lead-in wire 44.
This VMJ battery 42 comprises topsheet surface 42S；Two terminal contacts 422；More than one battery junction 424.Wherein, should
Multiple battery junctions are between this two terminal contacts 422.This lead-in wire 44 is respectively connecting to this terminal contacts 422.Additionally, this draws
Line 44 is connected to this topsheet surface 42S.
In this embodiment, this VMJ battery 42 is arranged on an assistant support 46 with TO-CAN encapsulation.This assistant support 46 has
There is more than one conductive connection pads 462, and this lead-in wire 44 is respectively connecting to this conduction and connects electricity 462 and export at least one voltage.
Turn now to Figure 27, the schematic diagram of an energy conversion device.In order to export many pole tensions, this VMJ battery 42 comprises
At least one metallic contact 426, and it is assigned between this battery junction 424, and one of them lead-in wire 44 is connected to this metal and connects
On point 426.When this metallic contact 426 is defined as sharing ground connection, voltage V1 and voltage V2 can be exported by this lead-in wire 44.
Turn now to Figure 28, the perspective view of a power transistor module.Wherein, a power transistor module 30 comprise to
A few transistor 31；One gate pole driver 32；One energy conversion device 33.
In another disclosed embodiment, this at least one transistor 31 is an insulation lock bipolar transistor
(Insulated Gate Bipolar Transistor, IGBT) or a metal oxide semiconductcor field effect transistor (Metal-
Oxide-Semiconductor Field Effect Transistor, MOSFET).This gate pole driver 32 is configured to drive
This at least one transistor 31.In order to ensure the stability of this transistors switch, this gate pole driver 32 needs one to stablize and powerful
Isolation voltage.
Turning now to Figure 28 and Figure 29, this energy conversion device 33 is configured to provide for isolation voltage to this gate pole driver
32.In another disclosed embodiment, this at least one transistor 31 and this energy conversion device 33 may be disposed at one
On radiator 34, such as coldplate.In order to improve radiating efficiency, thermojunction material 35 is configured in this energy conversion device 33
And this heat radiation is also between 34.
In this embodiment, this energy conversion device 33 is electrically connected to one first fin F1 and one second fin F2.?
In another disclosed embodiment, this energy conversion device 33 can be electrically connected to a fin, as shown in figure 24.
This energy conversion device 33 comprises more than one energy conversion device parts 332；One first terminal contacts 334；One
Two terminal contacts 336；Two metallic contacts 338.In this embodiment, this energy conversion device 33 is a VMJ battery, and this energy
Conversion equipment parts 332 are the battery junction of this VMJ battery.
These energy conversion device parts 332 are between this first terminal contacts 334 and this second terminal contacts 336.Should
Metallic contact 338 is arranged between these energy conversion device parts 332.In another disclosed embodiment, this gold
Belong to contact 338 selected from aluminum, teleoseal, copper or other conductive metal.
Turning now to Figure 28 and Figure 30, homogeneous energy is changed by perspective view and the waveguide of a power transistor module
The profile of device.In another disclosed embodiment, a waveguide 37 is aligned in this energy conversion device 33, borrows
This guarantee luminous energy can uniform transmission to this this energy conversion device 33.One laser source parts 36 are in order to provide sufficient luminous energy to this energy
Amount conversion equipment 33.These laser source parts 36 are connected to this waveguide 37.These laser source parts 36 comprise an optical fiber link 362；
One laser 364.This optical fiber link 362 is connected to this waveguide 37.This laser 364 coupled to this optical fiber link 362.Therefore, should
Laser light W can be transferred to this energy conversion device 33 by this optical fiber link 362 with this waveguide 37.Disclosed
In another embodiment, this waveguide 37 may be used to encapsulate this energy conversion device 33.
Turn now to Figure 28 and Figure 29, the perspective view of a power transistor module and the vertical view of an energy conversion device
Figure.This first fin F1 and this second fin F2 generates from the inner side of this energy conversion device 33, and is spaced each other.At this
In embodiment, this first fin F1 and this second fin F2 generate from different metal contact 338, and with this first terminal contacts
334 and this second terminal contacts 336 spaced.Additionally, this energy conversion device 33 has two end surface 33S, and this
One fin F1 protrudes from different end surface 33S respectively from this second fin F2.
In this embodiment, this first fin F1 and this second fin F2 can be considered shared ground connection fin, and this first end
Tip node 334 and this second terminal contacts 336 can be considered an anode.Therefore, this first terminal contacts 334 and this first fin F1
Exportable one first voltage V1.This first terminal contacts 334 and the exportable one second voltage V2 of this second fin F2.Additionally, should
Second terminal contacts 336 and the exportable tertiary voltage V3 of this first fin F1.This second terminal contacts 336 and this second fin
Exportable one the 4th voltage V4 of F2.As a example by the VMJ battery of one 10 millimeters × 5 millimeters of areas, this first voltage V1, the second electricity
Pressure V2, tertiary voltage V3 and the 4th voltage V4 can be respectively 9.9V, 6.6V, 3.3V and 6.6V, and it meets this gate drive
The requirement of the isolation voltage needed for device 32.
In this power transistor module 30, owing to this energy conversion device 33 does not use magnetic core component, therefore use and be somebody's turn to do
Energy conversion device 33 can reach the effects such as low cost and lightweight.
Embodiment described above is only the preferred embodiment lifted by absolutely proving the present invention, the protection model of the present invention
Enclose and be not limited to this.The equivalent that those skilled in the art are made on the basis of the present invention substitutes or conversion, all in the present invention
Protection domain within.Protection scope of the present invention is as the criterion with claims.
Claims (29)
1. an energy conversion device, it is characterised in that be electrically connected and export many pole tensions with at least one fin, and each
This at least one fin includes:
[1] generate from the inner side of this energy conversion device；
[2] generate autogamy and be placed in the metallic contact in these energy conversion device parts；And
[3] spaced with the first terminal contacts and the second terminal contacts.
Energy conversion device the most according to claim 1, it is characterised in that wherein these energy conversion device parts are many groups
Storehouse, and these energy conversion device parts all have a positive charged terminal towards equidirectional, or this energy all conversion dress
Put parts and there is the positive charged terminal of other sides of this metallic contact dorsad.
Energy conversion device the most according to claim 1, it is characterised in that wherein these energy conversion device parts dorsad should
Other sides of metallic contact, wherein this terminal contacts and this metallic contact junction number each other and metal connection are each other
Receiving plane is equal.
Energy conversion device the most according to claim 1, it is characterised in that wherein this energy conversion device is by this at least
One fin performs heat transfer.
Energy conversion device the most according to claim 1, it is characterised in that wherein this at least one fin is to share ground connection
Fin, it performs running by this fin of other sides of these energy conversion device parts dorsad.
Energy conversion device the most according to claim 5, it is characterised in that wherein this first terminal contacts is shared with this and connect
Ground fin exports one first voltage, and this second terminal contacts exports one second voltage with this shared ground connection fin.
Energy conversion device the most according to claim 6, it is characterised in that wherein this first terminal contacts is shared with this and connect
There is between ground fin a distance, and this first voltage has a proportional relation with this distance.
Energy conversion device the most according to claim 6, it is characterised in that wherein this first terminal contacts is shared with this and connect
There is between ground fin a distance, and this second voltage has an inverse relation with this distance.
Energy conversion device the most according to claim 1, it is characterised in that wherein this energy conversion device and one first fin
Sheet and one second fin are electrically connected.
Energy conversion device the most according to claim 9, it is characterised in that wherein this first terminal contacts with this first
Fin output one first voltage, this second end and this second fin export one second voltage, and this first fin with this second
Fin exports a tertiary voltage.
11. energy conversion devices according to claim 10, it is characterised in that wherein this first terminal contacts with this first
There is between fin a distance, and this first voltage has a proportional relation with this distance.
12. energy conversion devices according to claim 10, it is characterised in that wherein this first terminal contacts with this first
There is between fin a distance, and the summation of this second voltage and this tertiary voltage has an inverse relation with this distance.
13. energy conversion devices according to claim 1, it is characterised in that wherein this energy conversion device is one vertical
Many junctions battery, and the battery junction of this vertical many junctions battery of this energy conversion device parts system.
14. energy conversion devices according to claim 1, it is characterised in that wherein this metallic contact is selected from aluminum, ferrum nickel cobalt
Alloy or copper.
15. energy conversion devices according to claim 1, it is characterised in that wherein this energy conversion device has an end
End surfaces, and this at least one fin protrudes from this end surface.
16. energy conversion devices according to claim 1, it is characterised in that wherein this energy conversion device has a top
Layer surface, and this at least one fin protrudes from this topsheet surface.
17. energy conversion devices according to claim 1, it is characterised in that wherein this energy conversion device has an end
Layer surface, and this at least one fin protrudes from this bottom surface.
18. 1 power transistor modules, it is characterised in that including:
At least one transistor；
One gate pole driver, is configured to drive this at least one transistor；And
This energy conversion device according to claim 1, is configured to provide for isolation voltage to this gate pole driver.
19. power transistor modules according to claim 18, it is characterised in that wherein this at least one transistor is one exhausted
Edge lock bipolar transistor or a metal oxide semiconductcor field effect transistor.
20. power transistor modules according to claim 18, it is characterised in that also include a radiator, wherein this is extremely
Few this energy conversion device of a transistor AND gate is arranged on this radiator.
21. power transistor modules according to claim 20, it is characterised in that also include thermojunction material, and should
Hot junction material is arranged between this energy conversion device and this radiator.
22. power transistor modules according to claim 18, it is characterised in that also include a waveguide, and this waveguide
Pipe is aligned in this energy conversion device.
23. power transistor modules according to claim 22, it is characterised in that also include laser source parts, and should
Laser source parts are connected to this waveguide.
24. power transistor modules according to claim 23, it is characterised in that wherein these laser source parts comprise a light
Fine link and a laser, and this optical fiber link is connected to this waveguide, and this laser coupled to this optical fiber link.
25. 1 energy conversion devices, it is characterised in that comprising:
One vertical many junctions battery, this vertical many junctions battery comprises two terminal contacts and be arranged between two terminal contacts
Multiple battery junctions；And
More than one wire, it is individually connected to this terminal contacts.
26. energy conversion devices according to claim 25, it is characterised in that wherein this vertical many junctions battery comprise to
A few metallic contact, this metallic contact is arranged between this battery junction.
27. energy conversion devices according to claim 26, it is characterised in that one of them this wire is connected to this metal
Contact.
28. energy conversion devices according to claim 25, it is characterised in that also include an assistant support, wherein this pair
Frame has more than one conductive connection pads, and this wire is distinctly electrically connected to this conductive connection pads.
29. energy conversion devices according to claim 25, it is characterised in that wherein this vertical many junctions battery has one
Topsheet surface, and this wire is distinctly connected to this topsheet surface.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/753,515 US20160126382A1 (en) | 2014-07-03 | 2015-06-29 | Energy conversion device with multiple voltage outputs and power transistor module using the same |
| US14/753,515 | 2015-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106328643A true CN106328643A (en) | 2017-01-11 |
Family
ID=57726006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610497998.XA Pending CN106328643A (en) | 2015-06-29 | 2016-06-29 | Energy conversion device and power transistor module using the same |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN106328643A (en) |
| TW (1) | TWI639247B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4332973A (en) * | 1974-11-08 | 1982-06-01 | Sater Bernard L | High intensity solar cell |
| US4996577A (en) * | 1984-01-23 | 1991-02-26 | International Rectifier Corporation | Photovoltaic isolator and process of manufacture thereof |
| US5019177A (en) * | 1989-11-03 | 1991-05-28 | The United States Of America As Represented By The United States Department Of Energy | Monolithic tandem solar cell |
| JP2762993B2 (en) * | 1996-11-19 | 1998-06-11 | 日本電気株式会社 | Light emitting device and method of manufacturing the same |
| US6353175B1 (en) * | 1999-09-17 | 2002-03-05 | Jx Crystals Inc. | Two-terminal cell-interconnected-circuits using mechanically-stacked photovoltaic cells for line-focus concentrator arrays |
| US7902453B2 (en) * | 2005-07-27 | 2011-03-08 | Rensselaer Polytechnic Institute | Edge illumination photovoltaic devices and methods of making same |
| CN102171840A (en) * | 2008-08-14 | 2011-08-31 | 葛瑞佛德太阳能股份有限公司 | Photovoltaic cells with processed surfaces and related applications |
| CN103165718A (en) * | 2011-12-09 | 2013-06-19 | 清华大学 | Solar energy battery pack |
| US20140077322A1 (en) * | 2012-09-16 | 2014-03-20 | Solarsort Technologies, Inc | Waveguide-Based Energy Converters, and Energy Conversion Cells Using Same |
| US20140158182A1 (en) * | 2012-12-11 | 2014-06-12 | Daniel Robert Watkins | Apparatus for generating electricity using an optical fiber cable light source and related methods |
| CN104867990A (en) * | 2014-02-21 | 2015-08-26 | 美环能股份有限公司 | Solar cell having passivation layer and manufacturing method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8723332B2 (en) | 2007-06-11 | 2014-05-13 | Invensas Corporation | Electrically interconnected stacked die assemblies |
-
2016
- 2016-06-29 CN CN201610497998.XA patent/CN106328643A/en active Pending
- 2016-06-29 TW TW105120575A patent/TWI639247B/en active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4332973A (en) * | 1974-11-08 | 1982-06-01 | Sater Bernard L | High intensity solar cell |
| US4996577A (en) * | 1984-01-23 | 1991-02-26 | International Rectifier Corporation | Photovoltaic isolator and process of manufacture thereof |
| US5019177A (en) * | 1989-11-03 | 1991-05-28 | The United States Of America As Represented By The United States Department Of Energy | Monolithic tandem solar cell |
| JP2762993B2 (en) * | 1996-11-19 | 1998-06-11 | 日本電気株式会社 | Light emitting device and method of manufacturing the same |
| US6028327A (en) * | 1996-11-19 | 2000-02-22 | Nec Corporation | Light-emitting device using an organic thin-film electroluminescent light-emitting element |
| US6353175B1 (en) * | 1999-09-17 | 2002-03-05 | Jx Crystals Inc. | Two-terminal cell-interconnected-circuits using mechanically-stacked photovoltaic cells for line-focus concentrator arrays |
| US7902453B2 (en) * | 2005-07-27 | 2011-03-08 | Rensselaer Polytechnic Institute | Edge illumination photovoltaic devices and methods of making same |
| CN102171840A (en) * | 2008-08-14 | 2011-08-31 | 葛瑞佛德太阳能股份有限公司 | Photovoltaic cells with processed surfaces and related applications |
| CN103165718A (en) * | 2011-12-09 | 2013-06-19 | 清华大学 | Solar energy battery pack |
| US20140077322A1 (en) * | 2012-09-16 | 2014-03-20 | Solarsort Technologies, Inc | Waveguide-Based Energy Converters, and Energy Conversion Cells Using Same |
| US20140158182A1 (en) * | 2012-12-11 | 2014-06-12 | Daniel Robert Watkins | Apparatus for generating electricity using an optical fiber cable light source and related methods |
| CN104867990A (en) * | 2014-02-21 | 2015-08-26 | 美环能股份有限公司 | Solar cell having passivation layer and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI639247B (en) | 2018-10-21 |
| TW201701493A (en) | 2017-01-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5032496B2 (en) | Stacked solar cell device | |
| US8633373B2 (en) | Sub-micrometer gap thermophotovoltaic structure (MTPV) and fabrication method therefor | |
| CN101657905B (en) | Leadframe based photo voltaic electronic assembly | |
| US20100116325A1 (en) | High efficiency solar panel and system | |
| CN102027601A (en) | Leadframe receiver package for solar concentrator | |
| US20100326492A1 (en) | Photovoltaic Cell Support Structure Assembly | |
| US7910947B2 (en) | Panel-shaped semiconductor module | |
| US20130206203A1 (en) | Photovoltaic module with integrated solar cell diodes | |
| US20150027513A1 (en) | Semiconductor substrate for a photovoltaic power module | |
| US8334450B2 (en) | Seebeck solar cell | |
| Katsuta et al. | Design and experimental characterization of optical wireless power transmission using GaAs solar cell and series-connected high-power vertical cavity surface emitting laser array | |
| US10446733B2 (en) | Hybrid solar cell | |
| Guan et al. | Fabrication and characterization of a high-power assembly with a 20-junction monolithically stacked laser power converter | |
| US20100037931A1 (en) | Method and Apparatus for Generating Electric Power Using Solar Energy | |
| US20160005902A1 (en) | Direct Thermal Path Heat Sinking Using Fins Formed From Energy Conversion Device Components, Including Subcomponents of Vertical Multijunction Photovoltaic Receivers Used For High Intensity Beaming and Wireless Power Transmission | |
| KR101001328B1 (en) | Compound generator using solar energy | |
| CN106328643A (en) | Energy conversion device and power transistor module using the same | |
| US10553736B2 (en) | Photovoltaic power converter receiver | |
| US20160126382A1 (en) | Energy conversion device with multiple voltage outputs and power transistor module using the same | |
| TWM431443U (en) | Solar module having thermal module | |
| US10559738B2 (en) | Pin coupling based thermoelectric device | |
| CN104348402B (en) | Utilize the solar-electricity Force system for being used for spacecraft or satellite for inverting metamorphic multijunction solar cells | |
| CN203734133U (en) | Serially-connected multi-tube semiconductor laser | |
| JP2013187304A (en) | Solar cell, solar cell module, solar cell system and a snow-melting method in solar cell system | |
| KR101485916B1 (en) | Hybrid type device for generating electricity |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170111 |
|
| WD01 | Invention patent application deemed withdrawn after publication |