JP2003124481A - Solar battery - Google Patents
Solar batteryInfo
- Publication number
- JP2003124481A JP2003124481A JP2001314040A JP2001314040A JP2003124481A JP 2003124481 A JP2003124481 A JP 2003124481A JP 2001314040 A JP2001314040 A JP 2001314040A JP 2001314040 A JP2001314040 A JP 2001314040A JP 2003124481 A JP2003124481 A JP 2003124481A
- Authority
- JP
- Japan
- Prior art keywords
- film
- solar cell
- cells
- thickness
- power generation
- Prior art date
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ｐｉｎ型又はｎｉ
ｐ型構造の複数のセルを多段に積層した太陽電池に関す
る。TECHNICAL FIELD The present invention relates to a pin type or ni type
The present invention relates to a solar cell in which a plurality of cells having a p-type structure are stacked in multiple stages.
【０００２】[0002]
【従来の技術】従来、薄膜型シリコン太陽電池として
は、例えば図３に示すものが知られている。図中の付番
１は、厚みが約１ｍｍのガラス基板を示す。この基板１
上には、ＩＴＯ，ＳｎＯ２等からなる膜厚０．６〜１．
０μｍの透明導電膜２を介して第１のセル３、第２のセ
ル４、ＩＴＯからなる膜厚０．０１〜１．０μｍの酸化
物膜５及び膜厚０．３〜０．６μｍの金属電極膜６が順
次形成されている。ここで、第１のセル３は、ｐ型の非
晶質Ｓｉ発電膜３ａと、ｉ型の非晶質Ｓｉ発電膜３ｂ
と、ｎ型の非晶質Ｓｉ発電膜３ｃとから構成されてい
る。また、第２のセル４は、ｐ型の非晶質Ｓｉ発電膜４
ａと、ｉ型の非晶質Ｓｉ発電膜４ｂと、ｎ型の非晶質Ｓ
ｉ発電膜４ｃとから構成されている。ここで、前記各発
電膜の膜厚は０．００５〜０．５μｍである。2. Description of the Related Art Conventionally, as a thin film type silicon solar cell, for example, one shown in FIG. 3 is known. Number 1 in the figure indicates a glass substrate having a thickness of about 1 mm. This board 1
On the upper side, a film thickness of 0.6 to 1. made of ITO, SnO 2 or the like.
First cell 3, second cell 4, oxide film 5 having a film thickness of 0.01 to 1.0 μm, and a metal having a film thickness of 0.3 to 0.6 μm made of ITO through a transparent conductive film 2 having a thickness of 0 μm The electrode film 6 is sequentially formed. Here, the first cell 3 includes a p-type amorphous Si power generation film 3a and an i-type amorphous Si power generation film 3b.
And an n-type amorphous Si power generation film 3c. In addition, the second cell 4 is a p-type amorphous Si power generation film 4
a, i-type amorphous Si power generation film 4b, and n-type amorphous S
i power generation film 4c. Here, the film thickness of each of the power generation films is 0.005 to 0.5 μm.
【０００３】なお、発電膜として微結晶シリコンを用い
た場合の膜厚は、０．００５〜５．０ｍｍである。ま
た、発電膜３ａ，４ａはｐ型、発電膜３ｃ，４ｃはｎ型
である場合について述べたが、発電膜３ａ，４ａがｎ
型、発電膜３ｃ，４ｃがｐ型である場合でもよい。The film thickness when microcrystalline silicon is used as the power generation film is 0.005 to 5.0 mm. Although the power generation films 3a and 4a are p-type and the power generation films 3c and 4c are n-type, the power generation films 3a and 4a are n-type.
The mold and the power generation films 3c and 4c may be p-type.
【０００４】こうした構成の太陽電池において、太陽光
はガラス基板１側から入射して透明電極膜２を透過して
各発電膜に入射する。太陽光は、発電膜３ａに吸収され
て、透明導電膜２と金属電極膜６との間に起電力が発生
し、電力を外部に取り出すことができる。ところで、こ
うした太陽電池において、電池の発電効率を向上させる
ために、例えば前記発電膜３ａ〜３ｃをａ−Ｓｉ、前記
発電膜４ａ〜４ｃを結晶質Ｓｉで構成するように、前記
発電膜３ａ〜３ｃ、４ａ〜４ｃを夫々光吸収帯域の異な
る材質とすることで入射光を有効に利用することが広く
行われており、タンデム型太陽電池と呼ばれている。In the solar cell having such a structure, sunlight enters from the glass substrate 1 side, passes through the transparent electrode film 2 and enters each power generation film. The sunlight is absorbed by the power generation film 3a, an electromotive force is generated between the transparent conductive film 2 and the metal electrode film 6, and the power can be extracted to the outside. By the way, in such a solar cell, in order to improve the power generation efficiency of the cell, for example, the power generation films 3a to 3c are made of a-Si, and the power generation films 4a to 4c are made of crystalline Si. It is widely practiced to effectively use the incident light by making 3c and 4a to 4c materials having different light absorption bands, and it is called a tandem solar cell.
【０００５】特開平１０−２９４４８１は、非晶質シリ
コン系薄膜光電ユニットと結晶質系光電変換ユニットを
２段積層させたタンデム型光電変換装置を示す。同装置
は、図４に示す構成となっている。図中の符番２１は基
板であり、この基板２１上に裏面電極２２を介して光電
変換ユニット２３，２４が２段に積層されている。一方
の光電変換ユニット２３は、プラズマ法によって順次積
層された一導電型層２５と、結晶質を含むシリコン系薄
膜の光電変換層２６と、逆導電型半導体層２７とから構
成されている。他方の光電変換ユニット２４は、プラズ
マ法によって順次積層された一導電型層２８と、結晶質
を含むシリコン系薄膜の光電変換層２９と、逆導電型半
導体層３０とから構成されている。前記光電変換ユニッ
ト２４上には、前面透明電極３１、櫛型電極３２が順次
形成されている。Japanese Unexamined Patent Publication No. 10-294481 discloses a tandem type photoelectric conversion device in which an amorphous silicon type thin film photoelectric unit and a crystalline type photoelectric conversion unit are laminated in two stages. The device has the configuration shown in FIG. Reference numeral 21 in the drawing is a substrate, and photoelectric conversion units 23 and 24 are stacked in two layers on the substrate 21 with a back electrode 22 interposed therebetween. One photoelectric conversion unit 23 is composed of one conductivity type layer 25 sequentially laminated by a plasma method, a photoelectric conversion layer 26 of a silicon-based thin film containing a crystalline material, and an opposite conductivity type semiconductor layer 27. The other photoelectric conversion unit 24 is composed of one conductivity type layer 28 sequentially laminated by a plasma method, a photoelectric conversion layer 29 of a silicon-based thin film containing a crystalline material, and an opposite conductivity type semiconductor layer 30. A front transparent electrode 31 and a comb-shaped electrode 32 are sequentially formed on the photoelectric conversion unit 24.
【０００６】[0006]
【発明が解決しようとする課題】しかし、従来のタンデ
ム型太陽電池では、材質が異なる層界面には界面未結合
手が存在し、これにより光発生キャリアの拡散長が低下
して、発電電圧の低下や電流損失が生じると考えられて
おり、改善の余地があった。However, in the conventional tandem solar cell, interfacial dangling bonds are present at the interface between layers of different materials, which reduces the diffusion length of photogenerated carriers and reduces the generated voltage. There is room for improvement because it is thought that a decrease and current loss will occur.
【０００７】本発明は上記事情を考慮してなされたもの
で、支持体上に透明電極層を介してｐｉｎ型又はｎｉｐ
型構造の複数のセルを多段に積層した太陽電池におい
て、少なくとも１組の隣り合うセル同士が、セル間に形
成された絶縁膜の開口穴を介して部分的に接触している
構成にすることにより、隣り合うセル同士を点接触さ
せ、もって高い変換効率を示す太陽電池を提供すること
を目的とする。The present invention has been made in consideration of the above circumstances, and it is a pin type or nip type via a transparent electrode layer on a support.
In a solar cell in which a plurality of cells having a die structure are stacked in multiple stages, at least one set of adjacent cells is partially in contact with each other through an opening hole in an insulating film formed between the cells. Thus, it is an object of the present invention to provide a solar cell which brings adjacent cells into point contact with each other and thereby exhibits high conversion efficiency.
【０００８】[0008]
【課題を解決するための手段】本発明は、支持体上に透
明電極層を介してアモルファスＳｉ又は結晶質Ｓｉより
なるｐｉｎ型又はｎｉｐ型構造の複数のセルを多段に積
層した太陽電池において、少なくとも１組の隣り合うセ
ル同士が、セル間に形成された絶縁膜の開口穴を介して
部分的に接触していることを特徴とする太陽電池であ
る。The present invention provides a solar cell in which a plurality of cells of pin type or nip type structure made of amorphous Si or crystalline Si are laminated in multiple stages on a support through a transparent electrode layer, The solar cell is characterized in that at least one pair of adjacent cells are in partial contact with each other through an opening hole in an insulating film formed between the cells.
【０００９】本発明において、前記絶縁膜（パッシベー
ション膜）としては、膜厚１０Å〜１μｍ、開口率１％
〜９０％の酸化物膜又は窒化物膜又は炭化物膜が挙げら
れる。ここで、膜厚を１０Å未満であるとカバレッジが
不十分であり、膜厚が１μｍを超えると１段目及び２段
目のｉ層で発生した光キャリアが１段目のセルと２段目
のセルの間を通過するときの損失が大きくなる。In the present invention, the insulating film (passivation film) has a film thickness of 10Å to 1 μm and an aperture ratio of 1%.
˜90% oxide film or nitride film or carbide film. Here, if the film thickness is less than 10 Å, the coverage is insufficient, and if the film thickness exceeds 1 μm, the photo carriers generated in the first and second i-layers are generated in the first and second cells. The loss increases when passing between cells.
【００１０】また、開口率が１％未満であると電流が流
れにくく、開口率が９０％を超えると隣り合うセル同士
の接触面積をつぼめた効果が小さくなる。更に、前記開
口穴の形状は特に限定されず、丸穴、角穴、楕円穴、ス
リット形状等いずれの形状でもよい。なお、上記「開口
率」とは、開口率（％）＝（開口穴／セルの表面積）×
１００で表す。If the aperture ratio is less than 1%, it is difficult for the current to flow, and if the aperture ratio exceeds 90%, the effect of reducing the contact area between adjacent cells becomes small. Further, the shape of the opening hole is not particularly limited, and may be any shape such as a round hole, a square hole, an elliptical hole, and a slit shape. In addition, the above-mentioned "aperture ratio" means aperture ratio (%) = (open hole / surface area of cell) ×
Expressed as 100.
【００１１】また、前記絶縁膜としては、膜厚１０Å〜
１μｍ、開口率１％〜９０％の酸化物膜又は窒化物膜又
は炭化物膜、及び厚さ１００Å〜１μｍのＺｎＯ又はＩ
ＴＯ薄膜を前記支持体側より順次積層されたものでもよ
い。The insulating film has a film thickness of 10Å
1 μm, oxide film or nitride film or carbide film having an aperture ratio of 1% to 90%, and ZnO or I having a thickness of 100Å to 1 μm
The TO thin films may be sequentially laminated from the support side.
【００１２】本発明において、前記酸化物膜又は窒化物
膜又は炭化物膜は、ＣＶＤ法、イオンプレーティング
法、真空蒸着法のいずれかの方法で形成した後、イオン
ビーム照射又はレーザー照射によるエッチングにより前
記膜の一部に開口穴を形成することができる。また、前
記酸化物膜又は窒化物膜又は炭化物膜は、支持体側のセ
ル表面又は表面近傍に設置したマスクを介してＣＶＤ
法、イオンプレーティング法、真空蒸着法のいずれかの
方法で形成することにより得ることができる。In the present invention, the oxide film, the nitride film, or the carbide film is formed by any one of a CVD method, an ion plating method, and a vacuum deposition method, and is then etched by ion beam irradiation or laser irradiation. Opening holes may be formed in a part of the film. The oxide film, the nitride film, or the carbide film is formed by CVD through a mask provided on the surface of the cell on the support side or in the vicinity of the cell.
Method, ion plating method, or vacuum vapor deposition method.
【００１３】[0013]
【発明の実施の形態】図１は、本発明の各実施例に係る
太陽電池について説明する。
（実施例１）図１を参照する。図中の付番１１は、厚み
が約１ｍｍのガラス基板を示す。この基板１１上には、
ＩＴＯ，ＳｎＯ２等からなる膜厚０．６〜１．０μｍの
透明導電膜１２を介して第１のセル１３が形成されてい
る。ここで、第１のセル１３は、ｐ型の非晶質Ｓｉ発電
膜１３ａと、ｉ型の非晶質Ｓｉ発電膜１３ｂと、ｎ型の
非晶質Ｓｉ発電膜１３ｃとから構成されている。ここ
で、前記各発電膜の膜厚は０．００５〜０．５μｍであ
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 illustrates a solar cell according to each embodiment of the present invention. Example 1 Reference is made to FIG. Reference number 11 in the figure indicates a glass substrate having a thickness of about 1 mm. On this substrate 11,
The first cell 13 is formed via the transparent conductive film 12 made of ITO, SnO 2 or the like and having a film thickness of 0.6 to 1.0 μm. Here, the first cell 13 is composed of a p-type amorphous Si power generation film 13a, an i-type amorphous Si power generation film 13b, and an n-type amorphous Si power generation film 13c. . Here, the film thickness of each of the power generation films is 0.005 to 0.5 μm.
【００１４】前記第１のセル１３上には、絶縁膜として
のＳｉＯ２膜１４が形成されている。ここで、ＳｉＯ２
膜１４の膜厚は例えば１００μｍであり、開口率は例え
ば１０％である。前記ＳｉＯ２膜１４は、イオンプレー
ティング法で形成した後、イオンビーム照射又はレーザ
ー照射によるエッチングにより前記ＳｉＯ２膜１４膜の
一部に開口穴１５を形成することができる。ここで、前
記開口穴１５の形状は、平面的に見て多数の丸穴を格子
状に配置した形状となっている。A SiO 2 film 14 as an insulating film is formed on the first cell 13. Where SiO 2
The film 14 has a film thickness of, for example, 100 μm, and the aperture ratio is, for example, 10%. After the SiO 2 film 14 is formed by an ion plating method, an opening 15 can be formed in a part of the SiO 2 film 14 by etching with ion beam irradiation or laser irradiation. Here, the shape of the opening holes 15 is a shape in which a large number of round holes are arranged in a grid pattern when seen in a plan view.
【００１５】前記ＳｉＯ２膜１４上には、第２のセル１
６、膜厚０．０１〜１．０μｍの酸化物膜（ＩＴＯ膜）
１７及び膜厚０．３〜０．６μｍのＡｇからなる金属電
極膜１８が順次形成されている。ここで、第２のセル１
６は、 ｐ型のＳｉ非晶質発電膜１６ａと、ｉ型の非晶
質Ｓｉ発電膜１６ｂと、ｎ型の非晶質Ｓｉ発電膜１６ｃ
とから構成されている。ここで、前記各発電膜の膜厚は
０．００５〜０．５μｍである。A second cell 1 is formed on the SiO 2 film 14.
6. Oxide film (ITO film) with a film thickness of 0.01 to 1.0 μm
17 and a metal electrode film 18 of Ag having a film thickness of 0.3 to 0.6 μm are sequentially formed. Where the second cell 1
6 is a p-type Si amorphous power generation film 16a, an i-type amorphous Si power generation film 16b, and an n-type amorphous Si power generation film 16c.
It consists of and. Here, the film thickness of each of the power generation films is 0.005 to 0.5 μm.
【００１６】上記実施例１によれば、第１のセル１３と
第２のセル１６間に両セル１３、１６同士を点接触させ
る開口部１５を有したＳｉＯ２膜１４を配置した構成
（点接触構造）となっているため、ＳｉＯ２膜が無いと
きと比較して一層高い変換効率を示した。According to the first embodiment, the SiO 2 film 14 having the opening 15 for making point contact between the first and second cells 13 and 16 is arranged between the first cell 13 and the second cell 16. Because of the contact structure), the conversion efficiency was higher than that without the SiO 2 film.
【００１７】事実、ＳｉＯ２膜１４の開口率を１％〜９
０％と変えた場合及びＳｉＯ２膜（絶縁膜）が無い場合
（従来）と規格変換効率との関係を調べたところ、図５
に示す結果が得られた。図５より、本発明による太陽電
池の変換効率が、従来の太陽電池と比べ、大きな値が得
られることが確認できた。In fact, the aperture ratio of the SiO 2 film 14 is 1% to 9%.
When the relation between the standard conversion efficiency and the case where the SiO 2 film (insulating film) is not present (conventional) was examined when it was changed to 0%, the results shown in FIG.
The results shown in are obtained. From FIG. 5, it was confirmed that the conversion efficiency of the solar cell according to the present invention was larger than that of the conventional solar cell.
【００１８】また、ＳｉＯ２膜の開口率を一定にしてＳ
ｉＯ２膜の膜厚を０．００１μｍ〜１μｍと変えた場合
及びＳｉＯ２膜が無い場合（従来）と規格変換効率との
関係を調べたところ、図６に示す結果が得られた。図６
より、本発明による太陽電池の変換効率が、従来の太陽
電池と比べ、大きな値が得られることが確認できた。Further, the aperture ratio of the SiO 2 film is kept constant and S
When the relationship between the standard conversion efficiency and the case where the film thickness of the iO 2 film was changed to 0.001 μm to 1 μm and the case where there was no SiO 2 film (conventional) was examined, the results shown in FIG. 6 were obtained. Figure 6
From this, it was confirmed that the conversion efficiency of the solar cell according to the present invention was larger than that of the conventional solar cell.
【００１９】（実施例２）図２を参照する。なお、図１
と同部材は同付番を付して説明を省略する。図中の符番
１９は、ＳｉＯ２膜１４を含む第１のセル１３上に形成
されたＺｎＯ又はＩＴＯからなる中間層を示す。ここ
で、中間層１９の膜厚は、例えば０．０１μｍとする。(Embodiment 2) Referring to FIG. Note that FIG.
The same members as the above are numbered the same and their explanations are omitted. Reference numeral 19 in the drawing indicates an intermediate layer made of ZnO or ITO formed on the first cell 13 including the SiO 2 film 14. Here, the film thickness of the intermediate layer 19 is, eg, 0.01 μm.
【００２０】実施例２によれば、実施例１と同様、高い
変換効率が得られた。事実、ＳｉＯ ２膜１４の膜厚を１
００Å、ＳｉＯ２膜の開口率を１０％として中間層の膜
厚を変えた場合及びＳｉＯ２膜も中間層も無い場合（従
来）と規格変換効率との関係を調べたところ、図７に示
す結果が得られた。図７より、中間層１９の膜厚を０．
００１〜１μｍとした場合の変換効率が、従来の場合と
それと比べ、大きな値が得られることが確認できた。According to the second embodiment, as in the first embodiment, it is high.
Conversion efficiency was obtained. In fact, SiO TwoThe film thickness of the film 14 is 1
00Å, SiOTwoIntermediate layer film with an aperture ratio of 10%
When changing the thickness and SiOTwoWhen there is no film or intermediate layer (subordinate
When the relationship between the standard) and the standard conversion efficiency was investigated, the results are shown in Fig. 7.
The result was obtained. From FIG. 7, the thickness of the intermediate layer 19 is set to 0.
The conversion efficiency when 001 to 1 μm is the same as that of the conventional case.
It was confirmed that a large value was obtained in comparison with that.
【００２１】（実施例３）本実施例３は、実施例１と比
べ、ＳｉＯ２膜を形成した後、レーザーエッチングによ
るパターニングを行ってＳｉＯ２膜に開口穴を形成する
以外は、実施例１と同様な方法により太陽電池を形成し
た。実施例３によれば、ＳｉＯ２膜の膜厚０．００１〜
１μｍ、開口率１〜９０％の範囲で変換効率が向上し
た。[0021] (Embodiment 3) Embodiment 3 is compared with Example 1, after forming the SiO 2 film, except for forming an opening hole in the SiO 2 film by patterning by laser etching, Example 1 A solar cell was formed by a method similar to. According to the third embodiment, the thickness of the SiO 2 film is 0.001 to 0.001.
The conversion efficiency was improved in the range of 1 μm and the aperture ratio of 1 to 90%.
【００２２】なお、上記実施例では、絶縁膜としてＳｉ
Ｏ２膜を用いた場合について述べたが、これに限らず、
ＳｉＣ膜、あるいはＳｉＮ膜等を用いてもよい。また、
上記実施例では、ｐｉｎ型構造の２段のセルの場合につ
いて述べたが、これに限らず、ｎｉｐ型構造の２段のセ
ルの場合にも上記実施例と同様に適用できる。また、セ
ル数も２段に限らず、３段以上のセルにも適用できる。In the above embodiment, Si is used as the insulating film.
The case of using the O 2 film has been described, but the present invention is not limited to this.
You may use a SiC film or a SiN film. Also,
In the above embodiment, the case of a two-stage cell having a pin structure has been described. However, the present invention is not limited to this, and can also be applied to the case of a two-stage cell having a nip structure, similarly to the above embodiment. Moreover, the number of cells is not limited to two, and the invention can be applied to cells having three or more stages.
【００２３】[0023]
【発明の効果】以上詳述したように本発明によれば、支
持体上に透明電極層を介してｐｉｎ型又はｎｉｐ型構造
の複数のセルを多段に積層した太陽電池において、少な
くとも１組の隣り合うセル同士が、セル間に形成された
絶縁膜の開口穴を介して部分的に接触している構成にす
ることにより、隣り合うセル同士を点接触させ、もって
高い変換効率を示す太陽電池を提供できる。As described in detail above, according to the present invention, in a solar cell in which a plurality of cells of pin type or nip type structure are laminated in multiple layers on a support through transparent electrode layers, at least one set of Solar cells exhibiting high conversion efficiency by allowing adjacent cells to come into point contact with each other by forming a configuration in which adjacent cells are partially in contact with each other through an opening hole in an insulating film formed between the cells. Can be provided.
【図１】本発明の実施例１に係る太陽電池の断面図。FIG. 1 is a sectional view of a solar cell according to a first embodiment of the present invention.
【図２】本発明の実施例２に係る太陽電池の断面図。FIG. 2 is a sectional view of a solar cell according to a second embodiment of the present invention.
【図３】従来の太陽電池の断面図。FIG. 3 is a cross-sectional view of a conventional solar cell.
【図４】従来の他の太陽電池の断面図。FIG. 4 is a cross-sectional view of another conventional solar cell.
【図５】実施例１による太陽電池に使用されるＳｉＯ２
膜の開口率及びＳｉＯ２膜が無い場合の太陽電池による
規格化変換効率を示す特性図。FIG. 5 SiO 2 used in the solar cell according to Example 1
Characteristic diagram showing the normalized conversion efficiency by the solar cell when the aperture ratio and the SiO 2 film of the film is not.
【図６】実施例１による太陽電池に使用されるＳｉＯ２
膜の膜厚及びＳｉＯ２膜が無い場合の太陽電池による規
格化変換効率を示す特性図。FIG. 6 SiO 2 used in the solar cell according to Example 1
Characteristic diagram showing the normalized conversion efficiency by the solar cell when the film thickness and the SiO 2 film of the film is not.
【図７】実施例２による太陽電池に使用されるＳｉＯ２
膜の開口率及びＳｉＯ２膜が無い場合の太陽電池による
規格化変換効率を示す特性図。FIG. 7 SiO 2 used in the solar cell according to Example 2
Characteristic diagram showing the normalized conversion efficiency by the solar cell when the aperture ratio and the SiO 2 film of the film is not.
１１…ガラス基板、
１２…透明電極膜、
１３…第１のセル、
１３ａ，１３ｂ，１３ｃ，１６ａ，１６ｂ，１６ｃ…非
晶質Ｓｉ発電膜、
１４…ＳｉＯ２膜（絶縁膜）、
１５…開口穴、
１６…第２のセル、
１７…酸化物膜（ＩＴＯ膜）、
１８…金属電極膜、
１９…中間層。11 ... Glass substrate, 12 ... Transparent electrode film, 13 ... First cell, 13a, 13b, 13c, 16a, 16b, 16c ... Amorphous Si power generation film, 14 ... SiO 2 film (insulating film), 15 ... Opening Holes, 16 ... Second cell, 17 ... Oxide film (ITO film), 18 ... Metal electrode film, 19 ... Intermediate layer.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 山口 賢剛 長崎県長崎市深堀町五丁目717番１号 三 菱重工業株式会社長崎研究所内 Ｆターム(参考） 5F051 AA03 AA05 CB12 CB14 CB22 DA15 DA18 DA20 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Kengo Yamaguchi 3-5-1, 717-1, Fukahori-cho, Nagasaki-shi, Nagasaki Hishi Heavy Industries Ltd. Nagasaki Research Center F term (reference) 5F051 AA03 AA05 CB12 CB14 CB22 DA15 DA18 DA20
Claims (5)
ァスＳｉ又は結晶質Ｓｉよりなるｐｉｎ型又はｎｉｐ型
構造の複数のセルを多段に積層した太陽電池において、 少なくとも１組の隣り合うセル同士が、セル間に形成さ
れた絶縁膜の開口穴を介して部分的に接触していること
を特徴とする太陽電池。1. A solar cell in which a plurality of cells having a pin type or nip type structure made of amorphous Si or crystalline Si are multi-tiered on a support through a transparent electrode layer, and at least one pair of adjacent cells are adjacent to each other. Are partially in contact with each other through the openings of the insulating film formed between the cells.
口率１％〜９０％の酸化物膜又は窒化物膜又は炭化物膜
であることを特徴とする請求項１記載の太陽電池。2. The solar cell according to claim 1, wherein the insulating film is an oxide film, a nitride film, or a carbide film having a film thickness of 10Å to 1 μm and an aperture ratio of 1% to 90%.
口率１％〜９０％の酸化物膜又は窒化物膜又は炭化物
膜、及び厚さ１００Å〜１μｍのＺｎＯ又はＩＴＯ膜を
前記支持体側より順次積層されたものであることを特徴
とする請求項１記載の太陽電池。3. The insulating film comprises an oxide film, a nitride film or a carbide film having a film thickness of 10Å to 1 μm and an aperture ratio of 1% to 90%, and a ZnO or ITO film having a thickness of 100Å to 1 μm on the support side. The solar cell according to claim 1, wherein the solar cells are more sequentially stacked.
は、ＣＶＤ法、イオンプレーティング法、真空蒸着法の
いずれかにより前面に形成した後、イオンビーム照射又
はレーザー照射によるエッチングにより前記膜の一部に
開口穴を形成することにより得られることを特徴とする
請求項２又は請求項３記載の太陽電池。4. The oxide film, the nitride film, or the carbide film is formed on the front surface by any one of a CVD method, an ion plating method, and a vacuum evaporation method, and is then etched by ion beam irradiation or laser irradiation. The solar cell according to claim 2 or 3, wherein the solar cell is obtained by forming an opening in a part of the solar cell.
は、支持体側のセル表面又は表面近傍に設置したマスク
を介してＣＶＤ法、イオンプレーティング法、真空蒸着
法のいずれかにより形成することにより得られることを
特徴とする請求項２又は請求項３記載の太陽電池。5. The oxide film, the nitride film, or the carbide film is formed by any one of a CVD method, an ion plating method, and a vacuum evaporation method through a mask provided on the surface of the cell on the support side or near the surface. It is obtained by this, The solar cell of Claim 2 or Claim 3 characterized by the above-mentioned.
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|---|---|---|---|
| JP2001314040A JP2003124481A (en) | 2001-10-11 | 2001-10-11 | Solar battery |
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