Patent Application Instruction Book For M-PIN-SPVSC (Multiple PIN Composition Silicon Super PV Cells for Solar Concentrator) Technical field [0001] The present invention relates to a new photoelectricity conversion energy device, belonging to the field of solar energy utilization Background Technology One [0002] The use of solar PV originated from Photovoltaic effect discovered by French experimental physicist E.Becquerel in 1839. W.G.Adams and R.E.Day studied the PV effect of selenium (Se) in 1877 and make the first piece of selenium solar cells. Charles Fritts,American inventor, described the principle of the first piece selenide solar battery in 1833. In 1904, Hall wachs found that the combination of copper and cuprous oxide (Cu/ Cu 2 0) having a PV characteristic. In 1921, German physicist Albert Einstein won the Nobel Prize in Physics for publishing a paper on the photoelectric effect. [0003] In 1953, Dr.Dan Trivich,Wayne State University of USA, completed the first theoretical calculation of PV conversion efficiency of various types of materials having different band gap width based on the solar spectrum. The same year, D.M.Chapin, C.S.Fulle and G.L.Pearson, Bell Laboratory researchers, reported the invention of 4.5% efficiency monocrystalline silicon solar cells. A few months later the efficiency reached 6%. In 1955, Western Electric began to sell commercial patent of silicon PV technology. And then, International Solar Energy Conference held at the Arizona State University, Hoffman Electronics Corporation introduced the 2% efficiency commercial solar cell , which was 14mW each sheet. The price was USA$25 each sheet, a whole solar cell was USA$1785/W. [0004] Thereforimproving the photoelectricity conversion efficiency under standard the sun Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 25 Patent Application luminous flux and performance price ratio (reference to the grid price) were the two long-term scientific and technological objectives in solar photoelectricity utilization. [0005] From the middle of last century to now, there were many kinds and types of solar PV cells, scientific and technological content increased. By material, there were monocrystalline silicon , polycrystalline silicon , amorphous silicon and gallium arsenide, cadmium telluride , copper indium gallium selenide , etc. By category, there were PN unijunction type, film type, and multi-layer PN junction stack type, etc. [0006] The last yardstick is to improve performance price ratio to use solar PV energy as a basis energy , which is not only environmentally friendly conceptual energy. The solar silicon substrate PV cell is the first choice of the most potential one based on its material universality, relative environmental protection of production, performance price ratio of unit watts and current productivity. [0007] If multiple plights of the silicon PV cell can be solved, such as actual working hours in a year, lower Fill Factor under load conditions ,"estivation" and thermally induced damage, and increase the real amount of electricity and improving the performance price ratio, it will be undoubted for Human to enter a new era in Energy utilization. See Drawing and Notes 10-20. . [0008] In the recent half century, scientists and engineers have made a lot of efforts to solve many problems of the above. Currently, photoelectricity conversion efficiency of the monocrystalline silicon PV cell sheet which is produced in commercial process has reached to 18.5%, photoelectricity conversion efficiency of Polycrystalline silicon PV cell has reached to 18%. Although the photoelectricity conversion efficiency and performance price ratio have been greatly improved, it is still a problem of utilizing the solar energy. Therefor, finding another way is the main direction for scientists and engineers. Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 26 Patent Application [0009] In recent years, new technology developments of silicon PV cellular material are in several ways: one is to improve silicon PV cell power output by increasing solar radiation concentration ratio, the use of silicon PV cell is reduced at the same time. Therefore, performance price ratio has been improved. However, Lens sun tracking system which is complex and expensive has to be appended to solve the requirement of daily and seasonal changes of solar angle of the silicon PV cell. Meanwhile, high luminous flux makes working temperature of silicon PV cell too high, which causes silicon PV Cell" dead heat " and stop working. Another research direction is to increase "water medium cooling system" under working face, which not only reduces the "dead heat" risk of high temperature of the silicon PV cell, but also collects heat ( convert to hot water to output). [0010] These two research directions are just close to solve the problems, low photoelectricity conversion efficiency and low performance price ratio are still problems in use of solar photovoltaic. Background Technology two The characteristics of the existing solar silicon substrate PV cells [0011] Fist, the effective absorption spectrum ( more than 50% ) is only part of the solar radiation spectrum, which is between 600 ~ 1000 inn, and the peak is 850nm. This range is less than 50% in solar radiation spectrum, and in the light intensity or low energy density part. There has no cheap and.effective way to greatly expand the effective absorption spectrum (more than 50%) of currently silicon PV cell. See Drawing and Notes 10. [0012] Second, Its surface is silver paste dense electrode. In order to block solar radiation as little as possible, silver dense of the silicon substrate surface is only 3 to 5% of surface, and the dense spacing is also difficult to more intensive. It forms surface contact resistance or Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 27 Patent Application conductivity resistance. Please refer the details in diagram and note 16. [0013] The third characteristic of silicon PV cells: Protective film coating ( duck blue) is structured on the surface because the needs of the surface ray reflection and the anti -oxidation of the cell surface to make it heat up faster. Especially in the fully closed state, it often cause low photoelectricity conversion efficiency, even do not work. Please refer the details in diagram and note9 & 16-17. [0014] The fourth characteristic of silicon PV cells: Its heat resistance is not very strong, heat on the surface is passed and spread from semi-heat conductor N junction to PN junction to P junction to back electrode foil. Please refer the details in diagram and note 16 & 17. [0015] The fifth characteristic of silicon PV cells: it has the "heat induced damage" blistering. When silicon PV are under two time standard radiation concentration ratio, the blistering could happen if the duration time is so long. When they are under 5 time concentration radio standard radiation, the blistering could happen in 10 minutes. When they are under 10 time concentration ratio standard radiation, the blistering could happen in 5 minutes. Then silicon cells will be oxidized and lose the PV conversion capability. Please refer the details in diagram and note 18. [0016] The sixth characteristic of silicon photovoltaic cells: it has the "heat induced damage" cracking. When they are under 5 time concentration radio standard radiation, the thermal stress cracking could happen if radiation is nonuniform or heat dissipating is uneven. Please refer the details in diagram and note 19. [0017] The sixth characteristic of silicon substrate PV cells: it has the moisture-heat induced damage. Please refer the details in diagram and note 17. Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 28 Patent Application Summery [0018] Since the invention of the solar silicon substrate PV cells, scientists and engineers all over the world have been working on everything possible to try to improve the photoelectricity conversion efficiency. But in the past 60 years, it is only increased from 4.5% to 18.5% in production. It means that only 1% is increased every 4 years more in average. [0019] But the striving target or idealized maximum photoelectricity conversion efficiency is only increased from 18% to 24% upto 32% which is known at present. [0020] The author of this invention believes that the new revolutionary invention construction of the solar silicon substrate PV cells must be based on three key points as following: a. the full spectrum high-efficiency solar radiation absorption; b. the strict restriction on recombination of photo-electron-hole pair; c. the strong effective separation of photo-electron-hole pair. Besides, the cost should be low to achieve above three points. SUMMARY OF THE INVENTION [0021] This invention is based on the three key points. At first, it is assumed that there is a kind of structure, with present knowledge level, materials and manufacturing conditions, which can make the overlap of the broad spectrum radiation high-efficient absorption area, the strong restriction on photo-electron-hole pai recombination area and the "photo-electron-hole pair" strong separation area. Thus the maximum photoelectricity conversion efficiency 93% based on thermodynamic principle is then coming an idealization target which can be striving for. [0022] It is necessary that the materials can be extensively acquired and the manufacturing is relatively easy. The product can be used for power station construction and also be placed on dwelling roof. It should have a high cost-effectiveness and then can make solar energy from a conceptual green energy to become a basic energy of modem life. Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Famell St. WestRyde NSW 2114 Mail: austangcn(gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 29 Patent Application [0023] At first. a virtual model is designed: a semiconductor material A with relatively wide band-gap is low doped as the substrate strip, which should have a broad-spectrum efficient absorption for solar radiation: After considering the adaptation with bottom substrate. which is related to Ec & Ev. crystal lattice , eutectic point and thermal expansion data, and also practicability and process conditions, a proper semiconductor material B with Relatively narrow band-gap can be selected.It is high doped as N-type and P+ type and constructed as an ultra-fine wire sieve, and then integrated with top and bottom surfaces of the substrate to form the built-in electrostatic field, the positive and negative electrodes of the electrostatic field composed by homotype heterojunctions and inverse-type heterojunctions as well. On two sides of the substrate, there are permanent strong magnetic strips. Thus the vertical P*IN~ type solar cell in strong magnetic field is completed. [0024] Because the overlap of broad spectrum high- efficiency absorption area where photo-electron-hole pair are generated with built-in electrostatic field can strongly restrict the recombination of photo-electrons and photo-holes. Because top and bottom surfaces of the PIN~ type solar cell are all heterojunctions. which constructed the "Photo-electron trap sieve, P-E TS" and "Photo-hole trap sieve, P-H TS" correspondingly. The three-in-one overlap area constructed by broad-spectrum solar radiation absorbtion area, built-in electrostatic Field and "photo-generated electron-hole" strong separation area is then established. And also because of the mechanism of particle cyclotron accelerator formed by overlap of built-in electrostatic field and strong magnetic field, the effect of strict restriction on recombination of photo-electrons and photo-holes and the effect of photo-electron-hole pair strong separation are all strengthened. So the solar cell photoelectricity conversion efficiency can be greatly increased, Please refer the details in diagram and note 14, 15, 22 24 & 29-32. [0025] According to the virtual model, as a choice, the semiconductor silicon with relatively wide band-gap 1.17eV is executed with low doping & diffusion and produced as a substrate with Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 30 Patent Application double-surface black silicon, which has the broad spectrum light trapping property. And a semiconductor with relatively narrow band-gap 0.67 eV germanium is cladding on the ultra-fine wires. Afier high doping & diffusion, it is constructed correspondingly as N type and P+ type ones, and then produced as an ultra-fine wire sieve. The sieve is integrated with the top and bottom surfaces of the substrate to form the "Photo-electron trap Sieve, P-E TS" and "Photo-hole trap Sieve, P-H TS". And then sintered NdFeB permanent magnetic stripes are placed on both sides of the battery bar. Thus the built-in electrostatic field is coincided with the strong magnetic field to form the particles(photo-electrons with negative charge and photo-holes with positive charge)cyclotron accelerator mechanism. A quaternity overlap area, combined with broad-spectrum of the radiation trapping area, built-in electrostatic field (which strictly limits the photo-electron/hole pair of recombination). semiconductor heterojunction quantum trap "photo-electron/hole pair" strong separation area, and cyclotron particle accelerator mechanism area of electrostatic field & strong magnetic particles (photo-electrons with negative charges / photo-holes with positive charges) is then formed. Please refer the details in diagram and note 33 & 34. [0026] Because the substrate of the vertical "P*I N"type PV cell is a two-surface black silicon strip which is low doped, the incident surface then has the EQE (External Quantum Efficiency) response over 87%. in the range of 220nm-2500nm of solar radiation. And back black silicon surface will high effectively absorb the reflected secondary photons caused by high - energy photon PV effect and the ray radiation penetrates through I-layer. Thus the solar radiation in the range of 220nn-~2500nm can all achieve the EQE response over 95%. Then the requirement of the virtual model is completed: efficiently absorb the full spectrum of radiation, Please refer the details in diagram and note 14&15. [0027] Because of the built-in electrostatic field in I-layer of the vertical "PI N type PV cell" and also the mechanism of cyclotron particle accelerator formed by overlap of built-in electrostatic field and strong magnetic field, a double effect mechanism of restrict restriction Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangen@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 31 Patent Application on recombination for "photo-electron-hole pair" is thus formed. It is basically meet the requirement of virtual model: strong restriction on recombination of "photo-electron-hole pair", Please refer the details in diagram and note30 & 32. [0028] Because of the built-in electrostatic field in I-layer of the vertical "P*I N type PV cell" and also the mechanism of cyclotron particle accelerator formed by overlap of built-in electrostatic field and strong magnetic field, and because of the P-E TS and P-H TS heterojunction structure on substrate top and bottom surfaces, the triple strict separation mechanism of "photo-electron-hole pair" is thus formed, which basically meets the requirement of the virtual model: strong separation for "photo-electron-hole pair", Please refer the details in diagram and note 23, 24 & 30, 32. [0029] Because the dense sieve wire cores are good metal thermal conductors, they can construct high effective delivery channels for instant heat and continuous heat. They can guarantee thermal uniformity of the PV cell substrate and eliminate effectively various "heat-induced damage" defects. Not only the reliable service life of silicon substrate PV cells can be prolonged, but also the working range of the cells can be extended to low and lower middle concentration ratios, which is 5 to 20 times, Please refer the details in diagram and note 33. [0030] Based on the M-PIN-PVSC silicon substrate solar photovoltaic cell structure and mechanism, and because of the double- surface black silicon on the vertical " P*IN~ type photovoltaic cell", a strong dual effect absorption mechanism of ray radiation is thus formed. [0031] Based on the M-PIN-PVSC silicon substrate solar photovoltaic cell structure and mechanism, and because of the mechanism of cyclotron particle accelerator formed by overlap of the built-in electrostatic field in I-layer of vertical "PI N~ type PV cell", a mechanism of double-effect strong restriction on recombination of "photo-electron-hole Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangen@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 32 Patent Application pairs". [0032] Based on the M-PIN-PVSC silicon substrate solar photovoltaic cell structure and mechanism, and because of the mechanism of cyclotron particle accelerator formed by overlap of the built-in electrostatic field in I-layer of vertical "P*I N- type PV cell", and also because of the heterojunction structures of the P-E TS and P-H TS on the top and bottom of substrate, a triple strong separation mechanism of "photo-electron-hole pairs" is then formed. [0033] Based on the M-PIN-PVSC silicon substrate solar PV cell structure and mechanism, the "2-2-3"strong effective photoelectric conversion mechanism is thus formed. [0034] Because of the "2-2-3"strong effective photoelectricity conversion mechanism based on the M-PIN-PVSC silicon substrate solar PV cell structure, the silicon substrate is doped with a proper concentration while considering the match of chemical treatment of black silicon with heterojunctions and also the proper internal resistance and radiation absorption effect. Under lower middle concentration ratios, the optimum current output characteristic can then be aquired. Please refer the details in diagram and note 28 & 28. [0035] Because of the "2-2-3"strong effective photoelectricity conversion mechanism based on the M-PIN-PVSC silicon substrate solar PV cell structure, the PV / T ( Photo Voltaic/Thermal system) solar electricity-heat cogeneration unit is thus more convenient to construct. [0036] Because of the "2-2-3"strong effective photoelectricity conversion mechanism based on the M-PIN-PVSC silicon substrate solar PV cell structure, the optimum voltage output characteristic can be acquired under lower middle concentration ratios with the PV / T and under optimum working temperature ranges with automation, Please refer the details in diagram and note 20 & 28. Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 33 Patent Application [0037] Because of the " 2 -2-3"strong effective photoelectricity conversion mechanism based on the M-PIN-PVSC silicon substrate solar PV cell structure, the optimum power output characteristic can be acquired under lower middle concentration ratios with the PV / T also under optimum working temperature ranges with automation, Please refer the details in diagram and note 20 & 28. [0038] Because of the " 2 -2-3"strong effective photoelectricity conversion mechanism based on the M-PIN-PVSC silicon substrate solar PV cell structure, the practical effective working hours can be several times greater than current solar silicon substrate PV cells , under lower middle concentration ratios with the PV / T also under optimum working temperature ranges with automation, Please refer the details in diagram and note 20 & 28.. [0039] Because of the "2-2-3"strong effective photoelectricity conversion mechanism based on the M-PIN-PVSC silicon substrate solar PV cell structure, the requirement difficulty of current solar silicon substrate PV cells for light incident angle is overcome, thus output power of the M-PIN-PVSC is only related to radiation intensity and unrelated to rays angle. Please refer the details in diagram and note 14. Summary [0040] Although manufacturing cost of the M-PIN-PVSC is 2-3 times higher than the one of current silicon substrate solar cells, the usage amount of the M-PIN-PVSC will be decreased several times corresponding to concentration ratios when it works with another invention of this invention author. When it works with the PV / T system of automatic temperature control, the comprehensive cost-effectiveness will be increased more than 10 times because of several time increases of annual practical working hours, practical electric energy production under load and additional residential hot water supply. Thus the solar energy become a necessary basic energy of modern life from conceptual green energy is possible. The author believes that this invention will effectively change the current situation of solar substrate photo-electricity and photo-heat utilization provided by the Australian. Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcnagmail.com/hotmail.coim Mobile: (Australia) 0404248933 / (China) 0086-13816709498 34 Patent Application The implementation method of M-PIN-SPVSC (Multiple PIN Composition Silicon Super PV Cells for Solar Concentrator) [0001] According to the design framework of a virtual model of the M-PIN-SPVSC, taking into account each of the basic principle and constitute condition of the "2-2-3" strong effective photoelectricity conversion mechanism and their cooperation with each other, also considering the universality of selected materials, and the feasibility of process condition, and cost-effectiveness, first production of components and test then assembled. [0002] The substrate material is the relatively wide energy gap 1.17eV semiconductor silicon. Because of the requirements of the M-PIN-SPVSC for lower inner resistance, concentration match of each heterojunction and electrochemical processing of black silicon, seven to eight "9" monocrystalline silicon are cut to make the 80-100pm thin slice, which is then executed by low doping & diffusion for backup. [0003] As it involves another patent, this article will only discuss the treatment of black silicon foran overview: because different doping concentrations (electrically resistivity different too) is different for the electrochemical processing and the effect of black silicon, put the monocrystalline silicon in the specific recipe chemical solution containing corrosive / accelerator / catalyst, and the wafers are irradiated by a special selected spectral glare under very low temperature. After the surface is black siliconized, ultrasonic cleaning with deionized water is then executed. Finally, ion bombardment is applied to activate black silicon surface. And then the chip are cut into strips for backup, which have the same width of Concentrator trough bottom. [0004] Test data indicates: in the unobstructed condition, all single surface chemically treated black silicon can achieve more than 87% EQE for the solar radiation from 220nm~ Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotnail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 35 Patent Application 2500nm; while the double surface chemically treated black silicon will achieve more than 95% EQE when it is fixed on the mirror base. [0005] Because the silicon-germanium heterojunction pairing is the mature technology in semiconductor device, the relatively narrow bandgap 0.67eV semiconductor germanium is selected as pairing material . [0006] At first, a metal wire is pulled into ultrafine good conductor cores with diameter 9p = 15 20jim, then it is clad with around 5pm germanium layer on the outside by deposition method. By the treatment of high temperature heating and temperature maintaining in muffle furnace, the germanium layer is solidified on conductor cores and the germanium layer crystallization is then completed. If the sieve aperture is 500 pm, then the woven sieve should have W px20, and its transmissivity will be more than 95%. [0007] This semiconductor sieve is treated by Ion bombardment method to form the N - type or P+ type semiconductor screen with high doping & diffusion for the backup, [0008] Especially to take into ccount the the semiconductor heterojunction each of ermanium Sieve And silicon substrate the respective doping concentration best match. [0009] Preparation of Nd-Fe-B permanent strong magnetic strip with sintering method for backup. [0010] As it involves another patent, this patent only describe the heterojunction conductive adhesive process: the multicomponent compound semiconductor glue is formed by combination of multiple element particles, ultra-fine lead-free glass particles and boiling solvents with dispering agents and the auxiliary agents for leveling and oxidation. This conductive glue is then painted on the bottom surface of N-type semiconductor sieve and on the top surface of the P+ type semiconductor sieve, and the alternate black silicone strip is put in the middle of them. The positive and negative electrodes are led out on the two Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Famell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 36 Patent Application sides. This product is then fixed by the special fixture and put into a boiling f oven with vacant or filled with nitrogen or argon gas. After high temperature heating and proper temperature maintaining in period of time, the conductive glue material crystalline & diffusion will be completed. [0011] On the base with good thermal conductor materials, a mirror surface is constructed with the width same as the M-PIN -SPVSC battery bar. On the two sides, the permanent strong magnetic stripes are embedded which have the same magnetic field direction for forming a equidirectional strong magnetic field in the middle. Then the PIN-SPVSC battery bar is fixed with transparent adhesive on the mirror. And the positive and negative electrodes are also fixed on the base with insulation thermal adhesive. Thus the embodiment is completed. [0012] About test data of the assembly: because the author of this invention has completed only spare parts at present, the overall integration sample is going to be finished in few months. But according to the previous tests and simulation calculation, the photoelectricity conversion fficiency of the M-PIN-PVSC will be at least two times as the one of current silicon substrate cells, and will more probably achieve more than 50%. The expansion of the specific embodiment [0013] When the M-PIN-PVSC is combined with the MGCTC (Multiplex Gradient Curve Trough Concentrator) of this invention author to build the PV / T practical device, a more better effect will be achieved. [0014] According to the requirements of inverter, the base of the M-PIN-SPVSC PV cella bar is constructed with multiple rows, which is extended to a small hot collector. When the collector is installed the system with temperature components, automatic control modules and DC solenoid valves, it can supply not only the domestic hot water around 50'C, but the M-PIN-SPVSC PV cella bars can work stably in the optimum working temperature range of 60--70'C. Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotinail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 37 Patent Application [0015] When the M-PIN -SPVSC PV cell bars combined with concentrator technology and PV/T combination supply, the optimum working performance can be achieved: optimum output current , the optimum output voltage, the optimum load output and the annual maximum working hours. Summary Although production cost of the M-PIN-PVSC is two to three times of current silicon substrate solar cells, the using amount of the M-PIN-PVSC will decrease several times corresponding to the decreasing of concentration ratio when combined with concentrator technology and PV/T combination supply. Because of several time increasing of annual actual working hours and actual power generation under load, and also because of the additional supply of hot water, the comprehensive cost-effectiveness of current silicon substrate solar cells can be increased more than 10 times. Thus, it is possible for the solar energy to become a modem life basic energy from a conceptual green energy. Mr. (Richard) Zhao Kun TANG! Add: NO. 68 Famell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 38 Patent Application Diagrams & Notes Sun radiation energy Diagram & Note 1 (basic understanding of solar radiation) 1. The sun is not only the key to maintaining the life on Earth, but the supplier of earth's thermal dynamic equilibrium system. 2. Compared with solar radiation energy, other energy sources are negligible. For example, the heat of earth core is only ten-thousandths of solar radiation energy, and cosmic Background radiation is only hundred-millionths of it. 3. The fossil energy, which was formed in the past 200 million years, can be used only for about 300 years by human being, and soon will be exhausted; continuing emission of greenhouse gas will lead the earth to a destructive path of reverse cycle heating! It is not just the need of environmental protection to use solar energy; solar energy can and must become the foundation energy of human society. 4. The sun's core temperature is up to 1.6M' K, and surface temperature is 6000'K. The sun converts 4 million ton mass to radiant energy to radiate to vast space. It only consumed 0.03 percent mass in the past 5 billion years. Although the earth only captured 2.2/billionths, the energy received from the sun every minute is equivalent to four hundred million tons of bituminous coal heat. The running and development of all the system of the nature relies on solar energy. luman need for energy is greatly exceed nature reserves. Human use solar energy accumulated earlier, which is coal, peatoil and gas, and irrationally exploit the surrounding biological system, until they are depleted. Human activities make it difficult to maintain the stability and regeneration conditions. The human is reminded and revenged for destruction of nature rules by crises. including ecological crisis . the energy crisis , the crisis of raw materials . food crisis . the crisis of the entire system. So many disasters and strong is the proof. Diagram & Note 2 (further understanding of solar radiation) 1. Solar radiation energy constant value is 1368 W/m 2 according to published by the World Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotiail.coim Mobile: (Australia) 0404248933 / (China) 0086-13816709498 39 Patent Application Meteorological Organization (WMO) in 1981, and the 99 of solar radiation spectrum of earth's upper atmosphere is at wavelength range of 0.15 ~ 4.0 microns. 2. The right Diagram shows each spectral component and the approximate light density of solar radiation that reached earth's surface. Diagram & Note 3 (analysis of solar radiation) 1. When solar radiation goes through atmospheres, not only the energy is reduced, but the spectral composition is changed, ultraviolet radiations blow 0 .29 jum are almost absorbed by the ozonosphere. Gas Strong absorption composition band Weak absorption band Oxygen (200rnmUV 690~760nmVisible light Ozone 200~320nmUV 600nmVisible light 930-l50OnnInfrare 600700nmVisible d ray ( Three Water vapor d asTre light (Three weak strong absorption abopinbd) 2. As the thickness band ) (travel route) of atmospheres is different, and when the solar altitude lowers, the longer wavelength part in direct solar radiation spectrum increases gradually, and the shorter wavelength part reduces gradually. This is the result that the shorter wavelength is scattered strongly by particles in the air when the solar elevation angle lowers. Relative intensity ( Total =100%) Spectrum/Angle of incidence A (nm) 0.5' 5 10 30 50 90 UV (295-400) 0 0.4 1 2.7 3.2 4.7 Visible (400-760) 31.2 38.6 41 43.7 43.9 45.3 Infrared (>760) 68.8 61 58 53.5 52.9 50 Among (400-440) 0 0.6 0.8 3.8 4.5 5.4 Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.comI/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 40 Patent Application 3. The right table (440~495) 0 21 4.6 7.8 8.2 9 (495-565) 1.7 2.7 5.9 8.8 9.2 9.2 shows the (565~595) 4.1 8 10 9.8 9.7 10.1 percentage of each (595-760) 25.4 1 25.2 19.7 135 12.2 1. radiation component with different solar elevation angle. Because of the different air quality and geographical latitude and other factors, this measured data are only for reference. Solar elevation angle = the angle between solar rays and ground level 4. Lower right table shows the relative ratio of each scattering spectrum section with different sun elevation angles. X (nm) h ( Angle ) <400 400-600 >600 3- 5.9 53.3 40.8 15" 14.6 58.2 27.2 30' 20.4 56. 1 23.5 450 23.2 54.8 22 600 24.6 54.2 21.2 5. Generally, the spectrum 90' 25. 8 53. 5 20. 7 energy of the earth's surface solar radiation is distributed as 7%, 50% and 43%, corresponding respectively to ultraviolet radiation (<400nm), luminous ray (400-760nm) and infrared ray (>760nm). However, in the wavelength of 0.476 microns, the energy of solar radiation reaches the highest value, which is approximately above 2 3.0 cal /cm .min. See graph 2 ; where 3Calorie= 4.18 Joule = 12.54 Watt. Second=752.4Watt. Minute = 45,144 W Hour = 45,1440 W/m' Diagram & Note 4 1.Light is one kind of electromagnetic waves. The graph 3 shows the permutation of different electromagnetic waves. 2.A photon is an energy quantum, which is one of the natures of light Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 41 Patent Application 3.Light has the nature of wave-particle duality, and the shorter the wavelength is, the more obvious the particle property will be; and the longer the wavelength is, the more obvious the wave property will be. Diagram & Note 5 1. The light quantum can be measured with electron volt. 2.Graph4 is the permutation Diagram of electromagnetic waves (including light waves) and its energy level "electron volts". 3.The Diagram shows that the higher the light frequency is, actually the shorter the wavelength is, the greater the energy will be (E = h x X) 4.Therefore, light frequency or wavelength has inverse square relation with energy. When the frequency is one time higher, the photon energy will be four times higher; or, the wavelength is half shorter, the photon energy will be four times higher. Diagram & Note 6 1.The Earth's ecliptic angle is the reason of four season shifting in a year, See the Graph5. 2.Therefore, the change of declination half angle in 23026' must be considered when solar cells collect solar radiation. The angle must be adjusted constantly, while it needs additional tracking device. This increases not only cost, but installation restrictions (excluding firstly the possibility of installation on roofs). Diagram & Note 7 1. The Graph shows the measured relation between season change and solar radiation intensity. Solar PV cells & Some predicament of silicon Substrate cells Chapter Diagram & Note 8 Silicon Substrate PV cells L.From the 1940s to present, the solar cells have been developed greatly. There are numerous types of solar cells and the technologies are becoming more advanced. 2.Divided by materials, there are monocrystalline silicon, multicrystal silicon, amorphous silicon Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.coin/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 42 Patent Application and gallium arsenide, cadmium telluride and CIGS, and so on. 3. Divided by types, there are PN single-junction, thin-film and multi-layer stack. 4. The Graph7 shows the absorption spectra and PV efficiencies of several solar PV cell types. 5. But the final yardstick still is: whether it can improve the performance price ratio and use solar energy as basic energy, not just an alternative energy source for environmental protection. 6. Because of material universality, environmental friendly production and performance price ratio per watt, the silicon PV cell is still one of the most promising choices. 7. If the problems of silicon cells can be solved and currently silicon PV cells can be modified to medium concentration ratio ones and also significantly improve the photo-electric conversion efficiency,the utilizing energy of human being will undoubtedly enter a new era. Multiple predicament of the silicon Substrate PV cell Diagram & Note 9 1. The Graph8 shows the adaptive performance comparison between gallium arsenide (GaAs) cells and silicon cells at high temperature. Indirect semiconductors(silicon)are not suitable for use in high temperature. 2. The Graph9 shows the voltage and electric current performance of silicon cells. The open circuit voltage is decreased with temperature rise, while the short circuit current is increased with temperature rise slowly. Because all currently silicon PV cells use the inverters to convert and output alternating current, the inverters will not work properly when the output voltage of cells is too low. 3. It shows that currently silicon PV cell panel are in "aestivation" abnormal-working state when high temperatures in summer. 4. To make silicon cells work properly under intensity radiation, especially in summer, the "heat-induced defects" problem must be solved first Diagram & Note 10 1. The Graph 10 shows PV-spectral response of currently silicon cells Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gnail.com/hotnail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 43 Patent Application 2. Among them, the EQE is External Quantum Efficiency,the EQE performance of the photo-electron/hole pair was generated(Does not mean the Photo-Electric current must be generated), the RECEE is Radiation energy conversion efficiency of electricity and its performance is photo-electric current. 3. Of course, if high effective absorption spectra of silicon cells can be adapted with broad-spectrum radiation of solar, the potential to effectively increase the silicon cell photon-electricity conversion efficiency and electrical power output per unit area is provided then. Diagram & Note I 1 1. The Graph I I is the off load voltage and short circuit current responses according to the incident light of silicon PV cells. 2. The relationship between off load voltage and illumination is nonlinear. When the Ilumination is 2000 Lx (about 2.928 W/Sr), the off load voltage goes to saturation. When the radiation intensity is very low, the power can still be supplied as long as the light intensity reaches the critical value after light concentrating. 3. The relationship between short circuit current and Ilumination is linear in a very wide range of Illumination. Diagram & Note 12 l.The Graphl2 shows the micro-surface of silicon PV cells. 2.The diagram shows that the uneven (crystalline cone) surface can not be all covered, when the angle of solar radiation parallel light increases. 3.The Graphl3 shows that one of the internal fundamental reasons for requiring incident light angle is the surface unevenness of silicon PV cells. Diagram & Note 13 (impact of light incident angle) 1. The Graphl4 shows the radiation angle impact to current output for silicon cells under the experimental condition with same light intensity. Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gnail.coin/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 44 Patent Application 2. The sun position change per hour is about 15 'in day. In range of 30 0 to left and right, the current output is higher than 70% which is still in normal range. 3.The silicon cell panels in actual use can only work properly in range of 10Am - 4Pm to output power, real working hours for the year is less than the 1/4 of number of annual sunshine hours ,but solar radiation intensity change is also other factor. 4. The Graph] 5 shows that the radiation angle impact to U 01 for silicon cells is very small under the experimental condition with same light intensity. Diagram & Note 14 (micro-graph of laser black silicon cell surface) 1. The Graph16 shows a micro-graph of the black silicon cell surface 2. Not only surface areas and surface burrs are increased, but also high effective absorption spectra of silicon cells are expanded to 220nm -2,500 nm, and even all (external quantum efficiencies) EQE are increased to above 93%, and has nothing to do with the light incident angle 3. But the absorbed radiation energy can be converted to electricity energy with only a lower efficiency till. This is related to some deep-seated factors, such as separation, transportation and collection of photo-electricity carriers, the lattice damage, lattice defects and recombination centers, doped impurities, the locations of the depletion area, built-in electrostatic field strength, band structures and PV cells structures, etc;see Graph 17. 4. This method has low processing efficiency and high cost. Diagram & Note 15 (chemical etching of the black silicon cell) 1. On the Graph18 it is the structural diagram of silicon cell with chemical etching. Apertures are around 2 to I5nm and bore depths are around 200 to 500nm. 2. Because of the light trapping effect, the black silicon also can obtain broad spectrum ( 220nm-2,500nm) high effective ( above 93% ) EQE. 3. On the Graph 19 it is the microcosmic picture . 4. But, RECEE did not obtain corresponding increase as well. 5. This method has high processing efficiency and low cost Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gnail.con/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 45 Patent Application Diagram & Note 16 1. The Graph2l shows a typical structure of silicon PV cells at present. 2. In this structure, there are multiple bother. 3. If better conductivity is required, conductive silver dense will occupy more surface area. For balancing, the currently dense spacing is controlled within 3 -3.5 mm, and the area is 3-5% of total surface areas; If plus current convergence of bars, the area will be more than 15% of total surface areas. 4. Experimental results show that the photo-electric efficiencies in the vicinity of conductive silver dense are much higher than those among dense-lines. It can be interpreted as a result of photo-electron/hole pairs among dense-lines high probability be recombined,and makes the RECEE much lower than the EQE, and also the too big resistance caused by a long distance for photo-electron among dense- very fine lines to reach conductive silvers very fine lines. 5.The Graph22 shows the response curve of photo-electron reach the electrode distance and relatively RECEE. Diagram & Note 17 1. Because the surface temperature of silicon cells will rise after receiving solar radiation and photo-electron/hole pairs recombination will also produce vibration heat(some of them will become to secondary photon radiating)also Indirect band gap material silicon cells will generate heat 2. The construction of the protective film is to prevent light reflection and oxidation under high temperature on silicon surface. If moisture in the air invaded, the protective film would be shelled and fragmented under high temperature. And then the dense conductive silver grid would be separated and the surface of silicon photo cell would be oxidized too. Because of the dark blue color of the film, the temperature increasing trend would be strengthened furtherPLS see the Graph23 3. The downward cooling channels through N- layer, PN-junction and P- layer have relative big Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.coin Mobile: (Australia) 0404248933 / (China) 0086-13816709498 46 Patent Application thermo resistance. 4. The current panel of silicon cells are sealed by aluminum frames around with glass panels for moisture-proof.Thus, the cooling condition becomes worst. When the surrounding temperature (under standard radiation intensity) is above 25 'C, the cell surface temperature will reach to above 75 'C in 1 hour. While in summer hot weather, the surface temperature can even be measured as 165 'C! 5.The currently thermal structure and its own material property of the silicon cell not only determined its "aestivation" and "strikes", but also limited its application under high light intensity condition due to heat-corrupt defects. Diagram & Note 18 1. At the Graph24 shows: One of the bad consequences of heat-corrupt defects is the surface blistering of silicon cells, caused by uneven heating, due to uneven radiation intensity, and uneven cooling itself. 2. Usually, when concentration ratio is 2, this phenomenon could appear; when concentrating ratio is 5, the blistering will appear in 10 minutes; when concentrating ratio is 10, the blistering will appear in 5 minutes. 3. Once the blistering appears, the surface under high temperature condition will be oxidized rapidly and lose its photovoltaic capability. Diagram & Note 19 1. The second bad consequence of heat-induced defects is the silicon cell surface cracking phenomenon which damages silicon cells, caused by uneven heating, due to uneven radiation intensity, and uneven cooling itself; and also caused by different thermal expansion coefficients of bottom electrode (aluminum foils)and silicon crystals,PLS see the Graph25. Diagram & Note20 (Concentration affect to solar cells) 1. Different solar cells have different performances in operation temperatures Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 47 Patent Application 2. Under the concentration condition, different solar cells will have more diverse performances affected by operation temperatures 3.The Graph26 indicates the performance before concentration, the middle figure on right indicates the performance after concentration; the corresponding relationship of the power fill factor FF affected by operation temperatures among germanium PV cells, monocrystalline silicon cells and polycrystalline silicon cells,the FF::40-50% will increase it to FF>70-80% under the optimum operating temperature 4. the Graph27 indicates that: the power Fill Factor of substantial increase in affected by solar concentration among silicon PV cells. where the green shaded area is load area plus. Due to I./ lo-Load current, U,/ U 0 ,-Load voltage Characteristics of semiconductor materials and junction cells Diagram & Note 21 (Metal, Insulator, and Semiconductor) 1. There are a large number of electronics in all solid materials. Some of them have small resistivities, around l-1 Q-cm; and some of them have big ones, around 1014-1022 Q-cm,a huge difference than the small ones. The secret is completely depended on the electronic distributions. According to solid state physics, the outer electron band of metals is continuous, and out of the valence bands there is a vacant band. The electrons can enter into the vacant band under effect of electric forces and then the electric conductivity is good. Comparing with metals, the energy bands of other materials are discontinuous. There is a forbidden band (or Eg,energy gap) between the valence bands and conduction bands. The wider the forbidden band, the more difficult the electrons to enter the conduction band will be. When the forbidden band width is greater than 9 eV, the material is then called insulator, which has very bad electric conductivity. When the forbidden band width Eg is in the range of 0~9eV, the material is called semiconductor, which has poorer conductivity 2. The second feature of semiconductor materials is that a small amount of doping can cause great change in conductivity. (E.g. when lppm Boron is doped into pure silicon, the electric Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 48 Patent Application resistivity of silicon will be decreased from 2.14xl0 3 2-m to about 4x1O'Q-m.) The N-type electronic conduction or P-type ion (hole) conduction will be formed by donor doping or acceptor doping respectively 3. The third feature of semiconductor materials is that a lattice is constituted by its covalent bond or ionic bond. Semiconductor crystal structure can be divided into various types, such as Diamond,Hui zinc and Wurtzite and Sodium chloride 4.Semiconductor materials have to be divided into followings: element semiconductors of silicon, germanium and selenium and so on, Binary compounds semiconductors of III-V group with gallium arsenide, gallium phosphide and indium phosphide and etc, II-VI group with cadmium sulfide, cadmium selenide, zinc telluride, zinc sulfide and etc,IV-IV group with carborundum and etc, and ternary or multi-system compound semiconductors as solid solution of gallium-aluminum-arsenide, solid solution of germanium-gallium-arsenic -phosphorus, and also organic semiconductors there are Diagram & Note 22(Parameters of semiconductor materials) 1. Semiconductor is divided into direct and indirect bandgap materials. And the direct bandgap semiconductor materials are Ec & Ev in the same position in k-space. When electronic transitions to the conduction band will generate conductive electrons and holes (becoming half-filled band) and only need to absorb compulsory energy, The detail sees Graph28. And the indirect bandgap semiconductor materials are Ec & Ev in the different positions in k-space. Electrons in indirect band gap semiconductors not only need to absorb energy (9 during transition, which is accompanied by appropriate emission or absorption of phonons momentummf. Electron wave vector K can be changed and it means that the locations of electrons in the K space are changed after transition. And then there will be a great chance to release energy to lattice, which will be converted to phonons and then converted to heat energy released out. So, the radiation absorption coefficient i(x) of direct bandgap semiconductor is higher. It can also absorb photons near the surface. But the radiation absorption coefficient a(k) of indirect bandgap semiconductor is lower and easier to generate heat. The radiation absorption Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 49 Patent Application coefficient of direct bandgap semiconductor gallium arsenide is about 10 times greater than the indirect band gap material silicon. Comparing with the same level light absorption, it means that the direct bandgap semiconductor PV cells can be very thin because 5pm thickness of GaAs can absorb 95 % of the sun radiation. And comparing with the optimum band gap of solar spectrum which is 1.4eV, the gallium arsenide's 1.43eV is much closer than the 1.1 eV of the mono crystal silicon. The detail sees Graph29 PLS. 2. The characteristics parameters of semiconductor materials can reflect not only differences between the semiconductor materials and other non-semiconductor materials, but also differences among the semiconductor materials and even feature value differences of the same material under different conditions. These parameters include the forbidden bandwidth eg, resistivity,carrier mobility, non-equilibrium carrier lifetime, dislocation density and thermal expansion coefficient and so on. The forbidden bandwidth is determined by semiconductor electronic state and atomic configuration, and reflects the required energy to stimulate valence electrons in atoms of the materials from bound state to free state. Resistivity and carrier mobility reflect the conductivity of materials, where eg of all high-mobility materials is narrow. Non-equilibrium carrier lifetime T reflects the relaxation behavior of internal carriers of semiconductor materials during transition from a non-equilibrium state to an equilibrium state under the action of external (such as light or electrostatic field). Lattice dislocations is the most common type of defects. Dislocation density is used to measure the degree of lattice integrity of single crystal semiconductor materials, while amorphous semiconductor materials do not have this parameter. For different semiconductor materials, the thermal expansion coefficients are different. 3. When the PV. cell is made by the material with narrower bandgap eg, short-circuit current (photo-electric current) is relative greater. And better manufacturing process and better structural design can also increase short-circuit current because of less minority carrier recombination. When the PV cell is made by the materials with wider bandgap eg, open circuit voltage Ucc is then higher. The i-v curve fill factor ff is a measure of steepness at the inflection point, which also can be decreased by series resistance.Regular the higher the open circuit Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gnail.com/hotnail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 50 Patent Application voltage Uce, the higher the FF will be. Photo-electric conversion efficiency increases by the light intensity increases or when the temperature decreases. When PV cells are made by the materials with eg value in the range of 1.2-1.6ev, higher efficiency can be reached. Thin-film PV cells are preferable to the direct band gap semiconductor, because it can absorb photons of light near the surface 4. Under different doping concentrations, the performance of Fermi level temperature has big difference (see the curves on the Graph30) . 5. When different semiconductor materials are combined, various parameters and problems should be considered, such as the mismatch between lattice constants and the mismatch of thermal expansion coefficients and so on. 6. The silicon raw materials for PV cells should be purified, and the required purity after the decimal point six "9" s above whose maximum value is eight "9"s Diagram & Note 23(PV cells and the P-N junction) 1. The core of PV cells is the working principle of a P-N junction (That is Inverse-type be integrated) which is formed by the contact area of two electric-independent semiconductor material layers, one is the N area negative electrode of acceptor ion (NA) with rich electrons and another is the P area positive electrode of donor ion (ND*) with rich charge holes. Because of a very small amount activation energyAE of impurities, there is a mutual diffusion caused by concentration difference between the interfaces of P&N areas under room temperature. And a fixed ion area, which is also called depletion area or space charge area or barrier layer, is formed by two side balanced interface of P-layer and N-layer. A stable P-N junction built-in electrostatic field is then established on two sides of the interface, whose width is usually several im. The detail sees Graph31 PLS 2. The working principle of PV cells is that PV effect occurs in a decreasing order from surfaces to shallow surface and then to internals of the PV cell (both intrinsic and extrinsic)semiconductors, which means that semiconductor electrons transit from valence band to conduction band and then generate photo-electron/hole pairs,whose free electrons & charge holes were generated in the conduction band and the valence band respectively. But not all the generated photo-carriers are contributing to the photo-electric current. If the diffusion distance during the life time T, of N-area holes is L,, and the diffusion distance during the life time T. of P-area electrons is L,,, then L(Ln+Lp=L) will much more than the width of P-N junction. So, the photo-carriers, generated Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 51 Patent Application near P-N junction within the average diffusion distance L, will be considered to contribute to photo-electric current. But the photo-electron/hole pairs generated, which are far from junction area over L distance, will be all recombination during diffusion without any contribution to photo-electric effect of P-N junction. 3. The crux function of PN junction is, by built-in electrostatic field force, to separate photo-electrons and make them accumulated near N area, and to separate photo-holes and make them accumulated near P area, and then to output electric power (voltage and current). More key is that photo-electrons & holes orderly migration of their parallel under a electrostatic field strength & coulomb forceand the electrostatic field lines in the built-in electrostatic field area, and the recombination probability of photo-electron/holes is strictly limited. 4. Under thermal equilibrium conditions, the barrier height of built-in electrostatic field (that is junction electrostatic field) is equal to the difference between Fermi levels of N type and P type alone. The built-in electrostatic potential (essentially equivalent to the open circuit voltage) is UD=(EFN-EFp)/q. And the state of the built-in electrostatic potential outside depletion area is UD=(KT/q)n(NAND/n2 ), where NA. ND and ni are the densities of acceptor ,donor and intrinsic carrier (which is inversely proportional to the material's eg width) . This shows that wider eg material has a small ni and higher UD. At a certain temperature, the higher the doping of the PN junction two sides, the higher the UD will be. However, when doping becomes higher, the width of PN junction will be shallower and could seriously affect the photo-electron/hole pairs separation. Currently, all of the silicon PV cells, whose efficiency is more than 15 %, are using the deeper junctions instead of shallower ones. In addition, the light concentrating can increase the output voltage of silicon PV cells 5. Moreover, the essence of junction electrostatic field is that because of the density(or electric charge property) difference of charged area on two sides of the interface, the electric barrier of homotype junctions can be constructed by the materials with same type but different charge densities, such as p+-P+ junction and n.-Njunction, where the P' and N~ indicate high concentrations of doping, and p+ and n. indicate the low concentrations of doping 6.The contact of two different kind semiconductors can form heterojunctions, which can be divided into homotype heterojunctions and inverse-type heterojunctions. Because the energy gap width varies according to different semiconductor materials and other physical parameters are also different, heterojunctions can construct a variety of features 7.Semiconductor quantum traps can be formed by the materials with different energy gapsEg, which have the main functions: to make the quantum to be captured and bounded in barrier traps, to extend the life time T,, of photo-electrons and the life timer, of photo-holes(from 10-2 to 10-S), and the migration distance L. and L, can be further too. Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 52 Patent Application Diagram & Note 24 (Mechanism of semiconductor quantum well construction) 1. The Graph32 on the upper right shows the energy band structure of homotype heterojunctions, where AEc is conduction band with order and AEv is valence band with order.Because of nested alignment of the band structure of homotype heterojunctions, the bottom of conduction band Ec and the valence band top Ev of narrow Eg materials are all located in the forbidden band area of wider Eg materials, whereAEc andAEv are pointing to the opposite directions.GaAlAs/GaAs and InGaAsP/InP all belong to this type heterojunction. The energy level deviation of homotype heterojunctions has the signs of different pointing, and the electrons or holes are all at the same side of the interface of narrow Eg material and generated by thermal ionization. In this case, there is only one type carrier bound in quantum traps , such as electrons in n.-N~ structure and holes in p+-P* structure. On one side of the interface, there is the free carrier accumulation layer; and on the other side, there is the carrier depletion layer. The Graph33 shows the energy band structure of Inverse-type heterojunctions,where AEc is conduction band with order and AEv is valence band with order 2. Within the inverse-type heterojunctions, theAEc andAEv have the same pointings. They can be specifically divided into two kinds: one is with interleaved alignment, where the bottom of conduction band Ec of narrow Eg materials is located in the forbidden band of wider Eg materials, and the valence band top Ev of narrow Eg materials is located in the valence band of wider Eg materials,PIS sees the Graph33 left one; another one is with valence band of the wider Eg materials which has both bottom of conduction band and valence band top of the narrow Eg materials inside.PIS sees the Graph33 righ one. Basic characteristics of inverse-type heterojunctions are space separation in vicinity of the interface and localization in self-consistent quantum traps of electrons and holes; because of the overlap of wave functions, optical matrix elements are reduced and then photo-electron life will be extended and reduce the exciton binding energy too. As the light intensity and applied electrostatic field will be strongly influenced by the characteristics of the inverse-type heterojunction which shows unusual kinetics and composite properties of photo-minority carriers compared with the homotype heterojunction, the electrical, optical and PV properties and device parameters will be affected. The energy level deviation of Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gniail.com/hotmail.coin Mobile: (Australia) 0404248933 / (China) 0086-13816709498 53 Patent Application inverse-type heterojunctions has the signs of same pointing, and the electrons or holes are at different sides of the interface and generated by thermal ionization. Two types of carriers are trapped in self-consistent quantum traps whose lifetimes will be extended all from 10-'s to I0's Diagram & Note 25(Mechanism of semiconductor quantum well construction II) 1. Two closely back to back U-shaped heterojunctions I/A/I are constructed by semiconductor material A and substrate I which have wider band gaps Eg. If material A is a narrow Eg semiconductor and its conduction band bottom is lower than the one of substrate I, electrons will be bounded within material A in case that the distance between the two heterojunctions is smaller than the average free path length (100nm)of electron. The quantum trap is then formed by the electronic barrier, which is material I, and the electron potential trap, which is material A 2. Two closely back to back U-shaped heterojunctions 1/B/I are constructed by semiconductor material B and substrate I which have wider band gaps Eg. If material B is a narrow Eg semiconductor and its valence band top is higher than the one of substrate 1, this structure is also the quantum trap with the holes barrier, which is material I, and the holes potential trap, which is material B Diagram & Note 26(Mechanism of semiconductor quantum trap construction III) I. The nano-island quantum dot can be constructed by specific materials, where electrons or holes are limited to nano-island and further surrounded by wider band gaps Eg semiconductors 2. These specific materials can be precious metals (gold, silver, etc.) or some rare earth materials and other materials Diagram & Note 27 1. When metal contacts with N-type semiconductor, the Fermi of them will be balanced. It will cause the electrons to flow from N-type semiconductor to metal, and then the surface of the metal will acquire free electrons and the surface of semiconductor will have redundant cavities. It is called the Schottky energy barrier, which can effectively prevent recombination of the electron-cavities. It is also a very effective electron capture well. Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 54 Patent Application Diagram & Note 28(Fundamental characteristics of silicon PV cells) 1. The primary factor to assess the quality of silicon PV cells is photo-electric conversion efficiency i.At presentlis around 24 % in laboratory and around 16 ~ 19 % in industry.But,photo-electric conversion efficiency will be increased when light intensity increases and when temperature decreases. 2. The second factor is the single cell off-load voltage Uc. At present, Uoc is around O.4V---0.6V with silicon PV cells, which is determined by physical property of semiconductor materials and overall design and construction. 3. The important factor to assess the load capacity of solar cells is the Fill Factor FF%. The geometric meaning of FF is shown on the Graph34 I-V curve, where the shaded area is load area. Mathematical expression of Fill Factor is FF =( IxU,,)/( Isc x U) and Based on the concentrating and double heterojunctioninto trap sieve the Fill Factor will be into FF =( ImohX UmOh)/( IscxUoi)the mathematical expression of Optimum operating voltage is Umoh= Umi +Au & Optimum operating current Imoh ,,m+AI, where Isc--Short circuit current, U 1 I-off load voltage , 1 0 -Load current, Uo-Load voltage, IM --Optimum operating current, Um --Optimum operating voltage, Au-Voltage increment made by double quantum trap sieve under radiation concentrating conditions andAl-Current increment made by double quantum trap sieve under radiation concentrating conditions 4. Standard light intensity and ambient temperature, In the ground AM 1.5 spectrum,IOOOW/ m 2 ,ta=25'C Diagram & Note 29 (Increase photoelectric conversion efficiency and limit recombination of the Photo-electron/hole pair) 1. In photovoltaic effect, how to increase the photo-electricity conversion efficiency and limit the recombination of Photo-electron/hole pair are the two sides of one problem, The Graph35 illustrated part of the recombination. 2. from surface-shallow-deeper PV cell radiation absorbing is decreased exponentially from Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 55 Patent Application surface-shallow and then to a deeper layer. It means that the radiation absorbing is occurred mainly on the light incident surface. 3. Usually, a small amount of pentavalent atoms is added for increasing free electron concentration. A four-valence electron of the pentavalent atom is combined with a silicon bond and there will be a one-valence electron left. It needs only 0.05ev to isolate this electron, which is much smaller than the original 1.1ev. When room temperature is over 200 k, all of the impurities will generate free electrons. In the same way, adding a small amount of three-valence atoms to silicon will increase the cavity concentration. 4. Experiments show that the recombination loss of minority carriers is increased and the life time of them is decreased rapidly with surface doping concentration increasing;the Graph35 shows the relationship between life time of minority carriers and amount of surface doping concentration. 5. The Graph35 also shows the relationship between doping concentration and photo-electron/hole pairs recombination. 6. Usually, the main reasons for photo-electron/hole pairs recombination of silicon PV cells are considered as : a) Defect recombination, b) Auger recombination, c) Radiation recombination, d) Surface recombination; In fact, the construction defect of silicon PV cells is the major part of the photo-electron/hole pairs recombination. 7. It can be observed that photo-electrons and photo-holes pass crossover in opposite direction and are rarely compounded! Diagram & Note 30 1. According to the basic principle of physics, non-absolute zero degree elementary particles are all under unordered erratic vibration in the natural state. 2. The Graph36 shows that all of the photo-electron/hole pairs are under unordered erratic vibration (without certain moving vector direction) in the natural state with normal temperatures. Free electrons could lose their momentums caused by friction or collision and be compounded by electric-hole attraction. It is the fundamental cause of recombination of a large amount of the photo-electron/hole pairs. Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 56 Patent Application 3. The Graph37 shows that free electric charges or the photo-electron/hole pairs will all align orderly with electrostatic field line which has vector direction, and the force vector of electrons is opposite to the one of holes; The movement of photo-generated electrons are restricted among the electron cloud outside because of Coulomb force, while the movement of photo-generated hole will be in the opposite direction with photo-electrons and then transmit positive electrical charges. 4. In fact, photo-electrons and photo- holes, in PN junction, pass through parallelly and orderly, but are rarely compounded. It is caused by a built - in electrostatic field in PN junction. 5. The Graph38 shows the electrostatic field formed by heterojunction electrodes of Upper and back surfaces of the PV cells, where the distribution of electrostatic field lines shows the electrostatic field of low- doped substrate. 6. hole (with positive electrical charge) 7. Electron(with negative electrical charge) 4 Diagram & Note 31 (electromagnetic field) 1. The distribution of magnetic lines.see the Graph39 shows the distribution of magnetic lines. 2. The magnetic line is a kind of trajectory of free electron in space, which is different from electrostatic field line. The electrostatic field line goes from positive electric charge to negative electric charge. Along the line, electric potential energy is reduced. When a positive electric charge moves along it, electric force does positive work and electric potential energy decreases. The electrostatic field line can describe the direction of electrostatic field at any point which is the direction of tangential of the line. And it can also describe electrostatic field intensity at any point with intensive lines. But the magnetic line is closed from S to N inside magnetic, and from N to S outside magnetic. 3. The magnetic line is a kind of path or trajectory. The magnetic force is kind of force caused by free electron moving. The line means the orbit. Certainly, magnetic line can also be considered directly as a series particles of free moving electrons one by one on orbit. 4. When positive and negative charges move in the same direction in magnetic field, the forces on them will be in the opposite direction, which is the direction of Lorentz force. Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gniail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 57 Patent Application 5. As electrostatic field line, the magnetic field line can also describe the direction and intensity of the magnetic field. Diagram & Note 32( The impact of the mechanism of cyclotron particle accelerator on the orbit of photo- electron/hole pair) 1. The Graph40 shows that the impact of the mechanism of cyclotron particle accelerator on the orbit of photo-electron/hole pair when built-in electrostatic field coincides with high-intensity magnetic field. 2. The photo-electron has a negative charge and a convolution according to the Lorentz left-hand rule of magnetic field. Because of the impacts of vertical built-in electrostatic field and lateral Coulomb force,its radius of gyration becomes smaller to smaller and its speed is increasing while approaching negative electrode . 3. The photo-hole has a positive charge and a gyration according to the Lorentz right-hand rule of magnetic field. Because of the impact of vertical built-in electrostatic field, its speed is increasing while approaching positive electode. 4. The photo-electron/hole pair will have opposite migration vectors,the magnetic rotating vectors and electrostatic field attractive vector. So the recombination of photo-electron/hole pairs is strongly restricted. 5. In fact, when the recombination of photo-electron/hole pair is restricted, the pair are also separated at the same time. 6. Based on mechanism of cyclotron particle accelerator, photo-electrons/holes will obtain their momentums from strong magnetic field and negative and positive electrodes. Thus life times of photo-electrons & photo-holes will be greatly increased (T 1 ,+T.=T), or migration distance Ln+L,=L, which means that the diffuse distances of photo-electrons & photo-holes are greatly increased. And then the effective photo-electricity conversion efficiency is greatly improved. Diagram & Note 33 ( The preparation of highly doped semiconductor array sieve) 1. The sieve is produced by weaving with ultrafine metal wires. The diameter of sieve aperture is Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 58 Patent Application 20 times over the one of ultrafme wire size. Then above 90% solar radiation can pass through. 2. Because the ultrafine wire is cladded relatively narrow band-gap semiconducting material, the sieve is also a semiconducting sieve. 3. This semiconducting sieve is then highly doped with ion bombardment to make high concentration diffusion P+-type or N-type electrode. 4. The P*-type or N-type electrode is then integrated to upper and bottom surfaces of the relatively wide band-gap semiconductor substrate which has Low doped. A vertical type P+lN frame solar PV cell is then completed. 5. Because the surface layer of the sieve electrodes is produced by relatively narrow band-gap semiconductor materials, a bigger short-circuit current can be obtained. 6. The Graph4l is a schematic of the solar cell surface with sieve. Diagram & Note 34 The M-PIN-SPVSC overall structure diagram i. The Graph42 is a schematic of the the M-PIN-SPVSC overall structure Mr. (Richard) Zhao Kun TANG / Add: NO. 68 Farnell St. WestRyde NSW 2114 Mail: austangcn@gmail.com/hotmail.com Mobile: (Australia) 0404248933 / (China) 0086-13816709498 59