CN103329294A - 包括光散射层的led组件 - Google Patents
包括光散射层的led组件 Download PDFInfo
- Publication number
- CN103329294A CN103329294A CN2012800073016A CN201280007301A CN103329294A CN 103329294 A CN103329294 A CN 103329294A CN 2012800073016 A CN2012800073016 A CN 2012800073016A CN 201280007301 A CN201280007301 A CN 201280007301A CN 103329294 A CN103329294 A CN 103329294A
- Authority
- CN
- China
- Prior art keywords
- layer
- light scattering
- scattering layer
- led
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000149 argon plasma sintering Methods 0.000 title claims abstract description 45
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims description 24
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 17
- 238000005286 illumination Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 239000000835 fiber Substances 0.000 claims description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 18
- 230000005540 biological transmission Effects 0.000 description 16
- 239000000758 substrate Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000411 transmission spectrum Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
Abstract
Description
层 | 材料 | 厚度(nm) |
衬底 | (Lu,Y)AG_Lumiramic | |
光散射层 | Nb2O5 | 500.0 |
过滤器层: | ||
1 | SiO2 | 49.81 |
2 | Nb2O5 | 15.22 |
3 | SiO2 | 89.2 |
4 | Nb2O5 | 16.32 |
5 | SiO2 | 79.14 |
6 | Nb2O5 | 20.78 |
7 | SiO2 | 66.61 |
8 | Nb2O5 | 22.55 |
9 | SiO2 | 65.03 |
10 | Nb2O5 | 23.32 |
11 | SiO2 | 65.69 |
12 | Nb2O5 | 18.9 |
13 | SiO2 | 81.22 |
14 | Nb2O5 | 13.95 |
15 | SiO2 | 105.62 |
16 | Nb2O5 | 13.56 |
17 | SiO2 | 92.85 |
18 | Nb2O5 | 24.83 |
19 | SiO2 | 73.59 |
20 | Nb2O5 | 36.14 |
21 | SiO2 | 62.09 |
22 | Nb2O5 | 35.67 |
23 | SiO2 | 90.29 |
24 | Nb2O5 | 16.05 |
25 | SiO2 | 161.65 |
26 | Nb2O5 | 19.28 |
27 | SiO2 | 65.59 |
28 | Nb2O5 | 162.24 |
29 | SiO2 | 72.25 |
30 | Nb2O5 | 15.19 |
出射介质 | 硅树脂 | |
总厚度 | 2174.6 |
Claims (6)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP11152838A EP2482350A1 (en) | 2011-02-01 | 2011-02-01 | LED assembly comprising a light scattering layer |
EP11152838.6 | 2011-02-01 | ||
PCT/IB2012/050322 WO2012104744A1 (en) | 2011-02-01 | 2012-01-24 | Led assembly comprising a light scattering layer |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103329294A true CN103329294A (zh) | 2013-09-25 |
CN103329294B CN103329294B (zh) | 2016-08-10 |
Family
ID=44144732
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201280007301.6A Active CN103329294B (zh) | 2011-02-01 | 2012-01-24 | 包括光散射层的led组件 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9214609B2 (zh) |
EP (2) | EP2482350A1 (zh) |
JP (2) | JP2014504030A (zh) |
KR (1) | KR102066063B1 (zh) |
CN (1) | CN103329294B (zh) |
RU (1) | RU2586268C2 (zh) |
WO (1) | WO2012104744A1 (zh) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2831933B1 (en) * | 2012-03-30 | 2021-05-12 | Lumileds LLC | Optical cavity including a light emitting device and wavelength converting material |
DE102014112973A1 (de) * | 2014-09-09 | 2016-03-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauteil |
KR102252994B1 (ko) | 2014-12-18 | 2021-05-20 | 삼성전자주식회사 | 발광소자 패키지 및 발광소자 패키지용 파장 변환 필름 |
KR102415331B1 (ko) | 2015-08-26 | 2022-06-30 | 삼성전자주식회사 | 발광 소자 패키지, 및 이를 포함하는 장치 |
CN109411590B (zh) * | 2017-08-17 | 2020-01-07 | 光宝光电(常州)有限公司 | 发光二极管结构及发光单元 |
US11335835B2 (en) | 2017-12-20 | 2022-05-17 | Lumileds Llc | Converter fill for LED array |
US10686596B2 (en) * | 2018-03-01 | 2020-06-16 | Microsoft Technology Licensing, Llc | Mutually authenticated adaptive management interfaces for interaction with sensitive infrastructure |
JP2023134141A (ja) * | 2022-03-14 | 2023-09-27 | スタンレー電気株式会社 | 半導体発光装置およびそれを備えた車両用灯具 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080079015A1 (en) * | 2006-09-29 | 2008-04-03 | Benjamin Claus Krummacher | Optoelectronic component having a luminescence conversion layer |
CN100474645C (zh) * | 2005-03-18 | 2009-04-01 | 斯坦雷电气株式会社 | 发光器件 |
CN101657910A (zh) * | 2006-11-20 | 2010-02-24 | 皇家飞利浦电子股份有限公司 | 包含发光陶瓷和光散射材料的发光装置 |
WO2010064177A1 (en) * | 2008-12-02 | 2010-06-10 | Philips Intellectual Property & Standards Gmbh | Led assembly |
US20110012147A1 (en) * | 2009-07-15 | 2011-01-20 | Koninklijke Philips Electronics N.V. | Wavelength-converted semiconductor light emitting device including a filter and a scattering structure |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7795625B2 (en) * | 2006-01-16 | 2010-09-14 | Panasonic Corporation | Semiconductor light-emitting device |
US8721098B2 (en) * | 2009-05-19 | 2014-05-13 | Koninklijke Philips Electronics N.V. | Light scattering and conversion plate for LEDs |
RU2402108C1 (ru) * | 2009-11-09 | 2010-10-20 | Владимир Семенович Абрамов | Светодиодный источник излучения для систем управления транспортом |
EP2323184A1 (en) | 2009-11-13 | 2011-05-18 | Koninklijke Philips Electronics N.V. | LED assembly |
-
2011
- 2011-02-01 EP EP11152838A patent/EP2482350A1/en not_active Withdrawn
-
2012
- 2012-01-24 WO PCT/IB2012/050322 patent/WO2012104744A1/en active Application Filing
- 2012-01-24 US US13/976,479 patent/US9214609B2/en active Active
- 2012-01-24 JP JP2013550984A patent/JP2014504030A/ja active Pending
- 2012-01-24 CN CN201280007301.6A patent/CN103329294B/zh active Active
- 2012-01-24 KR KR1020137023008A patent/KR102066063B1/ko active IP Right Grant
- 2012-01-24 EP EP12701956.0A patent/EP2671266B1/en active Active
- 2012-01-24 RU RU2013140419/28A patent/RU2586268C2/ru active
-
2016
- 2016-06-30 JP JP2016129893A patent/JP6646536B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100474645C (zh) * | 2005-03-18 | 2009-04-01 | 斯坦雷电气株式会社 | 发光器件 |
US20080079015A1 (en) * | 2006-09-29 | 2008-04-03 | Benjamin Claus Krummacher | Optoelectronic component having a luminescence conversion layer |
CN101657910A (zh) * | 2006-11-20 | 2010-02-24 | 皇家飞利浦电子股份有限公司 | 包含发光陶瓷和光散射材料的发光装置 |
WO2010064177A1 (en) * | 2008-12-02 | 2010-06-10 | Philips Intellectual Property & Standards Gmbh | Led assembly |
US20110012147A1 (en) * | 2009-07-15 | 2011-01-20 | Koninklijke Philips Electronics N.V. | Wavelength-converted semiconductor light emitting device including a filter and a scattering structure |
Also Published As
Publication number | Publication date |
---|---|
RU2013140419A (ru) | 2015-03-10 |
EP2671266A1 (en) | 2013-12-11 |
EP2482350A1 (en) | 2012-08-01 |
EP2671266B1 (en) | 2016-07-20 |
US20130299865A1 (en) | 2013-11-14 |
JP2014504030A (ja) | 2014-02-13 |
KR20140004745A (ko) | 2014-01-13 |
RU2586268C2 (ru) | 2016-06-10 |
US9214609B2 (en) | 2015-12-15 |
CN103329294B (zh) | 2016-08-10 |
JP6646536B2 (ja) | 2020-02-14 |
KR102066063B1 (ko) | 2020-01-15 |
JP2016197738A (ja) | 2016-11-24 |
WO2012104744A1 (en) | 2012-08-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
CI01 | Publication of corrected invention patent application |
Correction item: Applicant Correct: Koninklijke Philips Electronics N.V. False: Koninkl Philips Electronics NV Number: 39 Volume: 29 |
|
CI02 | Correction of invention patent application |
Correction item: Applicant Correct: Koninklijke Philips Electronics N.V. False: Koninkl Philips Electronics NV Number: 39 Page: The title page Volume: 29 |
|
ERR | Gazette correction |
Free format text: CORRECT: APPLICANT; FROM: KONINKLIKE PHILIPS ELECTRONICS N. V. TO: KONINKLIJKE PHILIPS ELECTRONICS N.V. |
|
RECT | Rectification | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Eindhoven, Netherlands Patentee after: KONINKLIJKE PHILIPS N.V. Address before: Eindhoven, Netherlands Patentee before: KONINKLIJKE PHILIPS ELECTRONICS N.V. |
|
CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200721 Address after: Holland Schiphol Patentee after: KONINKLIJKE PHILIPS NV Address before: Eindhoven, Netherlands Patentee before: KONINKLIJKE PHILIPS N.V. |
|
TR01 | Transfer of patent right |