CN103326671B - A kind of efficient broadband Doherty power amplifier being applicable to low-frequency range - Google Patents
A kind of efficient broadband Doherty power amplifier being applicable to low-frequency range Download PDFInfo
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- CN103326671B CN103326671B CN201310257407.8A CN201310257407A CN103326671B CN 103326671 B CN103326671 B CN 103326671B CN 201310257407 A CN201310257407 A CN 201310257407A CN 103326671 B CN103326671 B CN 103326671B
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Abstract
The present invention relates to a kind of efficient broadband Doherty power amplifier being applicable to low-frequency range, mainly include that prime drives power amplifier and final stage power amplifier, prime drives power amplifier by lumped parameter topological structure I, drives power amplifier, branch electric bridge and load to form, final stage power amplifier is made up of lumped parameter topological structure II, lumped parameter topological structure III, carrier power amplifier, peak value power amplifier and microstrip line combiner, prime drives power amplifier to be operated in the biasing of AB class, the carrier power amplifier of final stage power amplifier is operated in the biasing of AB class, and using symmetrical Doherty structure, its peak work is put and is operated in the biasing of C class.The invention have the advantages that: present configuration can be effectively improved the efficiency of radio-frequency power amplifier, drive the input of power amplifier and final stage power amplifier to increase lumped parameter topological structure in prime simultaneously, the bandwidth of power amplifier can be greatly increased；Improve the input standing wave of power amplifier, reduce the difficulty of interstage matched, improve production efficiency.
Description
Technical field
The present invention relates to moving communicating field, a kind of efficient broadband Doherty power amplifier being applicable to low-frequency range.
Background technology
At present, mobile communication product is the most broadband, miniaturization, and the TD-RRU product being applied to 4G does not require nothing more than efficiency
Height, and more and more broadband, Ge great power tube producer releases their broadband power amplifier pipe successively, and such as GaN material is integrated
Power tube possess broadband, but this cost is the highest, is not optimum selection.The LDMOS power tube of current main flow is certain
Under matching way also can its bandwidth of broadening, the amplifier technique simultaneously using Doherty structure is to improve efficiency at present to have most
The technology of effect.
Summary of the invention
The shortcoming that the invention solves the problems that above-mentioned prior art, it is provided that a kind of can be effectively improved efficiency of RF power amplifier
It is applicable to the efficient broadband Doherty power amplifier of low-frequency range.
The present invention solve its technical problem use technical scheme: this efficient broadband Doherty being applicable to low-frequency range
Power amplifier, mainly includes that prime drives power amplifier and final stage power amplifier, prime drive power amplifier by lumped parameter topological structure I, drive power amplifier,
Branch electric bridge and load composition, final stage power amplifier by lumped parameter topological structure II, lumped parameter topological structure III, carrier power amplifier,
Peak value power amplifier and microstrip line combiner composition, prime drives power amplifier to be operated in the biasing of AB class, the carrier power amplifier work of final stage power amplifier
Biasing in AB class, and use symmetrical Doherty structure, its peak work is put and is operated in the biasing of C class.
Described lumped parameter topological structure I, lumped parameter topological structure II and lumped parameter topological structure III, by electricity
The cascaded structure of appearance, inductance composition, lumped parameter topological structure I drives the input of power amplifier to be connected with prime, and lumped parameter is opened up
Flutter structure II, lumped parameter topological structure III to be connected with the carrier power amplifier of final stage and the input of peak value power amplifier respectively, collect Headquarters of the General Staff
The capacitor and inductor that number topological structure II is connected with lumped parameter topological structure III has identical characteristic.
Described branch electric bridge drives the outfan of power amplifier to be connected with prime.
Described driving power amplifier and carrier power amplifier are realized by LDMOS amplifier tube, and are biased in AB class magnifying state.
Described load is realized by 50 ohmages, is connected with the isolation end of branch electric bridge.
Described peak value power amplifier is realized by LDMOS amplifier tube, and is biased in C class magnifying state.
Described carrier power amplifier input is connected with-90 degree outfans of branch electric bridge, peak value power amplifier input and branch electricity
0 degree of phase-shifted outputs of bridge is connected.
The invention have the advantages that: present configuration can be effectively improved the efficiency of radio-frequency power amplifier, simultaneously front
Level drives the input of power amplifier and final stage power amplifier to increase lumped parameter topological structure, can be greatly increased the bandwidth of power amplifier；Improve
The input standing wave of power amplifier, reduces the difficulty of interstage matched, improves production efficiency.
Accompanying drawing explanation
Accompanying drawing 1 is bandwidth-efficient doherty theory diagram of the present invention；
Accompanying drawing 2 is that prime of the present invention drives power amplifier theory diagram；
Accompanying drawing 3 is final stage power amplifier theory diagram of the present invention.
Detailed description of the invention
The invention will be further described below in conjunction with the accompanying drawings:
As it can be seen, this efficient broadband Doherty power amplifier being applicable to low-frequency range, mainly include prime drive power amplifier and
Final stage power amplifier, prime drives power amplifier by lumped parameter topological structure I, drives power amplifier, branch electric bridge and load to form, final stage power amplifier
It is made up of lumped parameter topological structure II, lumped parameter topological structure III, carrier power amplifier, peak value power amplifier and microstrip line combiner,
Prime drives power amplifier to be operated in the biasing of AB class, so can improve and drive the linear of power amplifier and efficiency performance, the load of final stage power amplifier
Ripple power amplifier is operated in the biasing of AB class, and uses symmetrical Doherty structure, and its peak work is put and is operated in the biasing of C class, is greatly improved end
Level power amplifier efficiency when 8dB rollback.Drive power amplifier and final stage power amplifier all in efficiency operation state, it is achieved to high PAR peak to average ratio
The high efficiency of signal is amplified.Drive the input of power amplifier and final stage power amplifier to increase lumped parameter topological structure in prime simultaneously, can
To be greatly increased the bandwidth of power amplifier, to improve the input standing wave of power amplifier.Lumped parameter topological structure I, lumped parameter topological structure II
With lumped parameter topological structure III, by electric capacity, the cascaded structure of inductance composition, lumped parameter topological structure I drives with prime
The input of power amplifier is connected, lumped parameter topological structure II, lumped parameter topological structure III respectively with the carrier power amplifier of final stage and
The input of peak value power amplifier is connected, and the capacitor and inductor that lumped parameter topological structure II is connected with lumped parameter topological structure III has
Identical characteristic, it is ensured that carrier power amplifier is consistent with phase place with peak value power amplifier input amplitude.Branch electric bridge drives power amplifier with prime
Outfan be connected, by the road radiofrequency signal that drives power amplifier, to be divided into two-way amplitude identical, the radiofrequency signal that phase is 90 degree.
Load and realized by 50 ohmages, be connected with the isolation end of branch electric bridge, for absorbed power.
Prime drives power amplifier theory diagram as shown in Figure 2.The tandem junction that lumped parameter topological structure I is made up of electric capacity, inductance
Structure, according to LC series resonance principal, the impedance entered in terms of input is It can be seen that work as f=fsTime, impedance is real impedance；Work as f > fsTime, in perception；As f < fsTime, in capacitive.According to
By above formula, smith circle diagram impedance matching principle, knows that low frequency is capacitive, and series capacitance inverse time on smith circle diagram impedance diagram
Pin direction rotates, and high frequency points is perception, and series inductance on smith circle diagram impedance diagram rotationally clockwise, the highest
Frequency and low frequency rotate in the opposite direction, it is possible to distortion of the low frequency in certain bandwidth and high frequency points all being tried one's best exists
Smith circle diagram, near the place of 50 ohm, reaches the purpose of broadening bandwidth.Owing to lumped parameter capacitor and inductor is operated in low-frequency range
Parasitic capacitance, stray inductance impact that (below GHz) produces are the least, it is possible to carry out spread bandwidth with series capacitance and inductance,
While broadening bandwidth, significantly improve the input standing wave of power amplifier, be also beneficial to the cascade of multistage power amplifier.Additionally by changing
Power transformation sense and the value of electric capacity, find optimum resonance point, improves its input standing wave, reduces the difficulty of interstage matched, improve and produce effect
Rate, compares than traditional microstrip line by serial inductor capacitance method, saves PCB surface and amasss, can make device miniaturization.
Drive power amplifier and carrier power amplifier to be realized by LDMOS amplifier tube, and be biased in AB class magnifying state, can effectively carry
Linear and the efficiency of high driving power amplifier.The LDMOS driving power amplifier is biased in AB class, takes into account the radiofrequency characteristicses such as linear and efficiency, leads to
Crossing the inductance capacitance value changing lumped parameter topological structure I, find suitable resonance point, broadening drives power amplifier bandwidth, simultaneously
Improve and drive power amplifier input standing wave, reduce the difficulty of interstage matched so that it is reach optimum performance.Peak value power amplifier is put by LDMOS
Big pipe realizes, and is biased in C class magnifying state, so can ensure that power amplifier has the highest efficiency when rollback 8dB.Micro-
Band wire combiner, it is achieved the power combing of final stage power amplifier two-way radiofrequency signal, the also function of impedance transformation.Close at peak value power amplifier
When closing, the output impedance transformation of carrier power amplifier to 100 ohm；When its peak work is put and fully opened, the output of carrier power amplifier
Impedance transformation to 50 ohm.
Final stage power amplifier (as shown in Figure 3), uses symmetrical Doherty structure, this symmetrical structure line in the case of DPD
Property is better than unsymmetric structure.-90 degree outfans of carrier power amplifier input and branch electric bridge are connected, peak value power amplifier input with
0 degree of phase-shifted outputs of branch electric bridge is connected, by changing lumped parameter topological structure II, the electricity of lumped parameter topological structure III
Electrification capacitance, finds suitable resonance point, broadening final stage power amplifier bandwidth, improves final stage power amplifier input standing wave simultaneously, reduces level
Between coupling difficulty so that it is reach optimum performance.Carrier power amplifier and peak value power amplifier, be all to be realized by LDMOS amplifier tube.Carrier wave
Power amplifier is operated in AB class magnifying state, and its peak work is put and is operated in C class magnifying state.Carrier power amplifier and peak value power amplifier outfan are respectively arranged with
One field offset amount, is used to adjust carrier power amplifier and the phase place of peak value power amplifier.Microstrip line combiner, by two sections of quarter-waves
Microstrip line composition, one section is 50 ohmages, and another section is 35 ohmages, it is achieved two branch road radiofrequency signals of final stage power amplifier
Power combing, the also function of impedance transformation.When peak value power amplifier is closed, two sections of quarter-wave microstrip lines are carrier wave
The output impedance transformation of power amplifier to 100 ohm；When its peak work is put and fully opened, the output impedance transformation of carrier power amplifier to 50
Ohm.Lumped parameter topological structure II, lumped parameter topological structure III principle as lumped parameter topological structure I principle,
High frequency points and low frequency rotate in the opposite direction, it is possible to distortion of the low frequency in certain bandwidth and high frequency points all being tried one's best exists
Smith circle diagram, near the place of 50 ohm, reaches the purpose of broadening bandwidth, but lumped parameter topological structure II and lumped parameter
Topological structure III must have identical characteristic, it is ensured that carrier power amplifier is identical with the amplitude of peak value power amplifier, phase contrast 90 degree.Simultaneously
By changing lumped parameter topological structure II, the inductance capacitance value of lumped parameter topological structure III, find suitable resonance point,
Improve final stage power amplifier input standing wave, reduce the difficulty of interstage matched, make raising production efficiency.
In addition to the implementation, the present invention can also have other embodiments.All employing equivalents or equivalent transformation shape
The technical scheme become, all falls within the protection domain of application claims.
Claims (4)
1. it is applicable to an efficient broadband Doherty power amplifier for low-frequency range, mainly includes that prime drives power amplifier and final stage power amplifier, its
Feature is: prime drives power amplifier by lumped parameter topological structure I, drives power amplifier, branch electric bridge and load to form, final stage power amplifier by
Lumped parameter topological structure II, lumped parameter topological structure III, carrier power amplifier, peak value power amplifier and microstrip line combiner composition, front
Level drives power amplifier to be operated in the biasing of AB class, and the carrier power amplifier of final stage power amplifier is operated in the biasing of AB class, and uses symmetrical Doherty
Structure, its peak work is put and is operated in the biasing of C class；Described lumped parameter topological structure I, lumped parameter topological structure II and lumped parameter
Topological structure III, by electric capacity, the cascaded structure of inductance composition, lumped parameter topological structure I drives the input of power amplifier with prime
End is connected, lumped parameter topological structure II, lumped parameter topological structure III respectively with the carrier power amplifier of final stage and peak value power amplifier
Input is connected, and the capacitor and inductor that lumped parameter topological structure II is connected with lumped parameter topological structure III has identical spy
Property；Described driving power amplifier and carrier power amplifier are realized by LDMOS amplifier tube, and are biased in AB class magnifying state；Described peak value
Power amplifier is realized by LDMOS amplifier tube, and is biased in C class magnifying state.
The efficient broadband Doherty power amplifier being applicable to low-frequency range the most according to claim 1, is characterized in that: described branch
Electric bridge drives the outfan of power amplifier to be connected with prime.
The efficient broadband Doherty power amplifier being applicable to low-frequency range the most according to claim 1, is characterized in that: described load
Realized by 50 ohmages, be connected with the isolation end of branch electric bridge.
The efficient broadband Doherty power amplifier being applicable to low-frequency range the most according to claim 1 and 2, is characterized in that: described load
Ripple power amplifier input is connected with-90 degree outfans of branch electric bridge, peak value power amplifier input and 0 degree of phase shift output of branch electric bridge
End is connected.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310257407.8A CN103326671B (en) | 2013-06-25 | 2013-06-25 | A kind of efficient broadband Doherty power amplifier being applicable to low-frequency range |
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| CN201310257407.8A CN103326671B (en) | 2013-06-25 | 2013-06-25 | A kind of efficient broadband Doherty power amplifier being applicable to low-frequency range |
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| CN103326671A CN103326671A (en) | 2013-09-25 |
| CN103326671B true CN103326671B (en) | 2016-09-28 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104796089B (en) * | 2014-01-22 | 2018-01-16 | 锐迪科微电子科技（上海）有限公司 | A kind of Doherty difference power amplifiers combined using voltage |
| CN106374860A (en) * | 2016-08-26 | 2017-02-01 | 成都通量科技有限公司 | Doherty power amplifier based on voltage synthesis structure |
| CN112910428B (en) * | 2019-11-19 | 2024-03-01 | 上海华为技术有限公司 | Combiner, chip and radio frequency power amplifier |
| CN111510076B (en) * | 2020-05-18 | 2023-08-18 | 优镓科技(北京)有限公司 | class-AB driven Doherty power amplifier, base station and mobile terminal |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142812A (en) * | 2010-12-17 | 2011-08-03 | 华为技术有限公司 | Doherty power amplifier |
| EP2495871A1 (en) * | 2011-03-03 | 2012-09-05 | Alcatel Lucent | Doherty amplifier comprising different transistor technologies |
| CN202444467U (en) * | 2011-12-31 | 2012-09-19 | 成都芯通科技股份有限公司 | Small-size Doherty circuit adaptable to 1GHz-below radiofrequency communication system |
| CN102801392A (en) * | 2012-09-13 | 2012-11-28 | 电子科技大学 | Radio frequency power amplification device |
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2013
- 2013-06-25 CN CN201310257407.8A patent/CN103326671B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142812A (en) * | 2010-12-17 | 2011-08-03 | 华为技术有限公司 | Doherty power amplifier |
| EP2495871A1 (en) * | 2011-03-03 | 2012-09-05 | Alcatel Lucent | Doherty amplifier comprising different transistor technologies |
| CN202444467U (en) * | 2011-12-31 | 2012-09-19 | 成都芯通科技股份有限公司 | Small-size Doherty circuit adaptable to 1GHz-below radiofrequency communication system |
| CN102801392A (en) * | 2012-09-13 | 2012-11-28 | 电子科技大学 | Radio frequency power amplification device |
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