CN112910428B - Combiner, chip and radio frequency power amplifier - Google Patents
Combiner, chip and radio frequency power amplifier Download PDFInfo
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- CN112910428B CN112910428B CN201911136389.1A CN201911136389A CN112910428B CN 112910428 B CN112910428 B CN 112910428B CN 201911136389 A CN201911136389 A CN 201911136389A CN 112910428 B CN112910428 B CN 112910428B
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- 229910052751 metal Inorganic materials 0.000 claims description 18
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- 239000003990 capacitor Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 9
- 239000003985 ceramic capacitor Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
Abstract
The application discloses combiner, including first capacitive element, second capacitive element, first inductance element and second inductance element, wherein, first capacitive element's first end is connected with the input, and first capacitive element's second end is connected with first inductance element and second inductance element's first end respectively, and second inductance element's second end is connected with second capacitive element's first end and combiner's output respectively, and first capacitive element's second ground connection, second capacitive element's second ground connection. By presetting the capacitance or inductance of each capacitive element and each inductive element, the combiner can have inverse frequency dispersion of impedance frequency response characteristics in a preset working frequency band. In the radio frequency power component, after the combiner is cascaded with the forward frequency dispersion circuit, the forward frequency dispersion can be partially or completely counteracted and output, the total frequency dispersion is reduced, and the bandwidth performance of the radio frequency power component is improved.
Description
Technical Field
The application relates to the technical field of communication, in particular to a combiner, a chip and a radio frequency power amplifier.
Background
In a mobile communication system, a combiner is applied to radio frequency power components such as a radio frequency power amplifier. The radio frequency power amplifier may amplify the radio frequency signal. As shown in fig. 1, the radio frequency power amplifier with signal amplification function mainly comprises a power divider, a power tube, a matching circuit and a combiner. The radio frequency carrier signal is divided into multiple paths of sub-signals through the power divider and enters the amplifying branches, the sub-signals are amplified through the power tubes on the amplifying branches, and then transmitted to the same combiner, the output matching circuit corresponding to each power tube is used for reconverting the combined point impedance to the equivalent load impedance of the output end pin of each power tube, the combiner synthesizes all the sub-signals into the final output signal, and the load impedance of the load device connected with the output end of the radio frequency power amplifier is converted to the combined point impedance, so that the gain, the efficiency and the power performance of the power tube meeting the design requirements are realized. The phase compensation input through the input phase line or the output phase line of each amplifier branch ensures that the signals output by all the amplifier branches are in equal phase at the combining point to obtain optimal power synthesis.
One problem with some rf power components is that the frequency response of the output matching circuit corresponding to the power tube is forward frequency dispersion during the impedance transformation process. The forward frequency dispersion caused by the output matching circuit cannot be completely avoided, but most of the existing combiners (for example, 1/4 wavelength microstrip line combiners, LC combiners, CL combiners, etc.) have the same frequency response characteristic as the forward frequency dispersion during the impedance transformation. After the output matching circuit and the combiner are cascaded, the total frequency dispersion can be positively expanded, and the bandwidth performance of the radio frequency power component can be deteriorated due to the excessive total frequency dispersion.
Disclosure of Invention
The embodiment of the application provides a combiner, and the impedance frequency response characteristic of the combiner is inverse frequency dispersion on a preset working frequency band. In the radio frequency power component, after the combiner is cascaded with the output matching circuit of the power tube, the forward frequency dispersion brought by the output matching circuit can be partially or completely counteracted, so that the total frequency dispersion is reduced, and the bandwidth performance of the radio frequency power component is improved.
The embodiment of the application also provides a chip and a radio frequency power assembly.
The first aspect of the present application provides a combiner applied to a radio frequency power assembly, the radio frequency power assembly including a power divider, a first power amplifying circuit, a second power amplifying circuit and a combiner.
In the radio frequency power assembly, a power divider is connected with first ends of a first power amplifying circuit and a second power amplifying circuit; the second end of the first power amplifying circuit is connected with the input end of the combiner, the second end of the second power amplifying circuit is connected with the input end of the combiner, and the output end of the combiner is connected with the load.
The combiner comprises a first capacitance element, a second capacitance element, a first inductance element and a second inductance element, wherein the first end of the first capacitance element is connected with an input end, the second end of the first capacitance element is respectively connected with the first ends of the first inductance element and the second inductance element, the second end of the second inductance element is respectively connected with the first end of the second capacitance element and the output end of the combiner, the second end of the first inductance element is grounded, and the second end of the second capacitance element is grounded.
Through theoretical research and simulation verification, the frequency response characteristic of the combiner can be changed in different frequency bands, namely, the frequency response characteristic of the combiner can be forward frequency dispersion or reverse frequency dispersion, and the frequency response characteristic of the combiner can be reverse frequency dispersion in a preset working frequency band by presetting parameters of basic elements in the combiner circuit. In the radio frequency power component, after the combiner is cascaded with the output matching circuit of the power tube, the forward frequency dispersion brought by the output matching circuit can be partially or completely counteracted, so that the total frequency dispersion is reduced, and the bandwidth performance of the radio frequency power component is improved.
In a first possible implementation manner of the first aspect, the first inductance element and the second inductance element are both metal bonding wires.
In a second possible implementation manner of the first aspect, the metal bonding wire is a gold wire, an aluminum wire or a copper wire, so as to reduce insertion loss of the combiner.
In a third possible implementation manner of the first aspect, the first capacitive element and the second capacitive element are both metal oxide semiconductor capacitors, and the Q value (quality factor) of the metal oxide semiconductor capacitors is high, so that the insertion loss of the combiner can be reduced.
In a fourth possible implementation manner of the first aspect, the first capacitive element and the second capacitive element are both ceramic capacitors, and the ceramic capacitors are also a capacitive element with a higher Q value (quality factor), so that insertion loss of the combiner can be reduced.
In a fifth possible implementation manner of the first aspect, the combiner further includes a substrate, the first capacitive element, the second capacitive element, the first inductive element and the second inductive element are disposed on the substrate, and the first capacitive element, the second capacitive element, the first inductive element and the second inductive element are disposed in one substrate to be connected, so that packaging is facilitated.
In a sixth possible implementation manner of the first aspect, the first inductance element is a first microstrip line, an electrical length of the first microstrip line is less than 90 degrees, and an electrical characteristic of a short microstrip line with an electrical length less than 90 degrees is close to that of the metal bonding line, where the metal bonding line cannot be used as the first inductance element, the first microstrip line may be used instead.
In a seventh possible implementation manner of the first aspect, the second inductance element is a second microstrip line, an electrical length of the second microstrip line is less than 90 degrees, and an electrical characteristic of a short microstrip line with an electrical length less than 90 degrees is close to that of the metal bonding line, where the metal bonding line cannot be used as the second inductance element, the second microstrip line may be used instead.
A second aspect of the present application provides a chip integrated with a combiner as described in the first aspect or any one of the possible implementations of the first aspect.
A third aspect of the present application provides a radio frequency power assembly comprising a combiner as described in the first aspect or any one of the possible implementations of the first aspect.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a radio frequency power amplifier;
FIG. 2 is a schematic diagram of one embodiment of a combiner provided in an embodiment of the present application;
fig. 3 is a schematic diagram of an impedance variation curve of the combiner according to an embodiment of the present disclosure;
fig. 4 is a schematic diagram of another embodiment of a combiner provided in an embodiment of the present application;
fig. 5 is a schematic diagram of another embodiment of a combiner provided in an embodiment of the present application;
FIG. 6 is a schematic diagram of another embodiment of a combiner provided in an embodiment of the present application;
fig. 7 is a schematic diagram of another embodiment of a combiner provided in an embodiment of the present application;
FIG. 8 is a schematic diagram of another embodiment of a combiner provided in an embodiment of the present application;
fig. 9 is a schematic diagram of another embodiment of a combiner provided in an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
The terms first, second and the like in the description and in the claims of the present application and in the above-described figures, are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments described herein may be implemented in other sequences than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or modules is not necessarily limited to those steps or modules that are expressly listed or inherent to such process, method, article, or apparatus. The division of the modules presented in this application is a logical division, and there may be other manners of division in practical application, for example, multiple modules may be combined or integrated in another system, or some features may be omitted, or not performed.
In addition, in the present application, unless explicitly stated and limited otherwise, the terms "connected," "disposed," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, or can be communicated between two elements or the interaction relationship between the two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The combiner provided by the embodiment of the application can be applied to a radio frequency power component integrated on wireless communication equipment such as a base station, for example, a radio frequency power amplifier for amplifying wireless signal power, and can also be applied to any radio frequency processing equipment or circuit which needs to perform impedance transformation or radio frequency signal synthesis, for example, a radio frequency filter, an antenna, a radio frequency small signal board, a repeater, a frequency conversion circuit, a modulator and the like. In a mobile communication system, user data to be transmitted is modulated onto a radio frequency carrier signal at a radio frequency front end of a base station or a user terminal, and the radio frequency carrier signal is amplified by a radio frequency power amplifier and then transmitted to other base stations or user terminals in space through an antenna.
The embodiment of the application provides a combiner, the frequency response characteristics of the combiner can be changed in different frequency bands, namely the frequency response characteristics of the combiner can be forward frequency dispersion or reverse frequency dispersion, and the frequency response characteristics of the combiner can be reverse frequency dispersion in a preset working frequency band by presetting parameters of basic elements in the combiner circuit. In the radio frequency power component, after the combiner is cascaded with the output matching circuit of the power tube, the forward frequency dispersion brought by the output matching circuit can be partially or completely counteracted, so that the total frequency dispersion is reduced, and the bandwidth performance of the radio frequency power component is improved.
Fig. 2 is a schematic diagram of an embodiment of a combiner 20 according to an embodiment of the present application.
As shown in fig. 2, the combiner may be used in a radio frequency power assembly 10. As a simple example, the radio frequency power assembly 10 may include a power divider 30, a first power amplifying circuit 40, a second power amplifying circuit 50, and the combiner 20.
The power divider 30 is connected to first ends of the first power amplifying circuit 40 and the second power amplifying circuit 50.
A second end of the first power amplifying circuit 40 is connected to an input of the combiner 20, a second end of the second power amplifying circuit 50 is connected to an input of the combiner 20, and an output of the combiner 20 is connected to a load.
The combiner 20 includes a first capacitive element 201, a second capacitive element 202, a first inductive element 203 and a second inductive element 204, where a first end of the first capacitive element 201 is connected to an input end of the combiner 20, a second end of the first capacitive element 201 is connected to first ends of the first inductive element 203 and the second inductive element 204, a second end of the second inductive element 204 is connected to a first end of the second capacitive element 202 and an output end of the combiner 20, a second end of the first inductive element 203 is grounded, and a second end of the second capacitive element 202 is grounded.
Through theoretical research and simulation verification, the impedance change curve of the combiner provided by the embodiment of the application can be represented as the curve shown in fig. 3 on a smith chart, the curves are intersected to form a shape similar to a circle, and the straight line direction from the low-frequency point impedance position to the high-frequency point impedance position is anticlockwise relative to the center of the smith chart on the right half of the circle. The shape of this impedance curve shows that the frequency response characteristic of the combiner is inverse frequency dispersion in the frequency band corresponding to the right half of the "circle". Through software simulation, researchers can preset capacitance values corresponding to the first capacitive element 201 and the second capacitive element 202 and inductance values corresponding to the first inductive element 203 and the second inductive element 204, so that the frequency response characteristic of the combiner is reverse frequency dispersion on a preset working frequency band (for example, 2500 megahertz (MHz) to 2700MHz shown in fig. 3), and forward frequency dispersion brought by a matching circuit in the first power amplifying circuit 40 and/or the second power amplifying circuit 50 is partially or completely offset, so that the bandwidth performance of the radio frequency power assembly 10 is improved.
Alternatively, the first inductance element 203 and the second inductance element 204 may be metal bonding wires. The inductance values required by the first inductance element 203 and the second inductance element 204 can be adjusted by selecting metal bonding wires with different specifications.
Preferably, the metal bonding wires selected from the first inductance element 203 and the second inductance element 204 may be gold wires, aluminum wires or copper wires, so as to reduce the insertion loss of the combiner.
Alternatively, the first capacitor 201 and the second capacitor 202 may be capacitors with high Q values (high quality factors), such as metal oxide semiconductor capacitors or ceramic capacitors, so as to reduce the insertion loss of the combiner.
In one possible implementation, the overall circuit structure of the combiner may be packaged as a single component for overall packaging in a single board surface mount manner.
Optionally, as shown in fig. 4, the combiner 20 may further include a substrate 205.
Specifically, the first capacitive element 201, the second capacitive element 202, the first inductive element 203, and the second inductive element 204 are disposed on the substrate 205. The substrate 205 is further provided with a transmission line and a radio frequency ground, the first capacitive element 201 and the second capacitive element 202 are adhered to the transmission line or the radio frequency ground by adopting single-layer or multi-layer plate capacitors, and the first inductive element 203 and the second inductive element 204 can be metal bonding wires and connected to the transmission line or the radio frequency ground through a bonding process, so that the basic circuit structure shown in fig. 2 is realized.
Alternatively, as shown in fig. 5, the first capacitor 201, the second capacitor 202, the first inductor 203 and the second inductor 204 in the combiner 20 may be lumped capacitors and lumped inductor devices originally integrated on the substrate 205, and this packaging method is more suitable for mass production on a production line. However, due to the existence of parasitic parameters of the lumped parameter elements (such as the lumped capacitors and the lumped inductors), researchers need to substitute the parasitic parameters into simulation during design, so that the frequency response characteristic of the combiner is inverse frequency dispersion on a preset working frequency band.
In a specific embodiment, the electrical characteristics of the short microstrip line (the electrical length is less than 90 degrees) are close to those of the metal bonding line, so in a scenario where the inductance value required by the first inductance element 203 and the second inductance element 204 is small, the short microstrip line may be used as the first inductance element 203 or the second inductance element 204 instead of the bonding line. In some scenarios, when a metal bonding wire is used as the first inductance element 203 or the second inductance element 204, the metal bonding wire is located too close to the peripheral element, and the processing equipment cannot perform bonding processing, and then a short microstrip line may be used instead of the metal bonding wire as the first inductance element 203 or the second inductance element 204. In addition, the short microstrip line has advantages in power capacity, heat dissipation, coupling and the like compared with the metal bonding line. Note that, the short microstrip line may be used as the first inductance element 203 or the second inductance element 204 instead of the metal bonding line only in a case where the inductance values required for the first inductance element 203 and the second inductance element 204 are small.
In one possible design, the first and second inductive elements 203, 204 may require only one or both of a small inductance value. As shown in fig. 6, when the inductance value required by the first inductance element 203 is small and the inductance value required by the second inductance element 204 is large, a short microstrip line M1 may be selected as the first inductance element 203. Alternatively, as shown in fig. 7, when the inductance value required by the first inductance element 203 is large and the inductance value required by the second inductance element 204 is small, a short microstrip line M2 may be selected as the second inductance element 204. Alternatively, as shown in fig. 8, when the inductance values required by the first inductance element 203 and the second inductance element 204 are smaller, a short microstrip line M1 may be selected as the first inductance element 203, and a short microstrip line M2 may be selected as the second inductance element 204.
Further, the basic circuit structure formed by the first capacitive element, the second capacitive element, the first inductive element and the second inductive element in the combiner 20 may be cascaded, as shown in fig. 9. In this topology, the total amount of the capacitive element and the inductive element of the combiner 20 is not limited to the first capacitive element, the second capacitive element, the first inductive element, and the second inductive element, and may include a third capacitive element, a fourth capacitive element, a third inductive element, a fourth inductive element, and so on. An inductance element and a capacitance element form a primary basic circuit, and the inductance value and the capacitance value of the inductance element and the capacitance element in each primary basic circuit need to be determined through simulation experiments. With this topology, the reverse frequency dispersion effect of the combiner 20 can be enhanced, but the insertion loss can also be increased.
The embodiment of the application also provides a chip, and the chip is integrated with the combiner described in any embodiment.
Alternatively, the chip may be an integrated power amplifier chip integrated with a radio frequency power amplifier, or may be a combiner chip integrated with one or more combiners as described in any of the above embodiments.
Embodiments of the present application also provide a radio frequency power assembly that may include a combiner as described in any of the embodiments above. In particular, the radio frequency power component may be a radio frequency power amplifier.
Finally, it should be noted that: the principles and embodiments of the present application have been described herein with reference to specific examples, the above examples being provided solely to assist in understanding the methods of the present application and their core ideas and not to limit them; although the technical solutions of the present application have been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the scope of the present application is not limited thereto, and any changes or substitutions that would be easily recognized by those skilled in the art within the scope of the present disclosure are intended to be included in the scope of the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.
Claims (10)
1. The combiner is characterized by being applied to a radio frequency power assembly, wherein the radio frequency power assembly comprises a power divider, a first power amplifying circuit, a second power amplifying circuit and the combiner;
the power divider is connected with the first ends of the first power amplifying circuit and the second power amplifying circuit;
the second end of the first power amplifying circuit is connected with the input end of the combiner, the second end of the second power amplifying circuit is connected with the input end of the combiner, and the output end of the combiner is connected with a load;
the combiner comprises a first capacitance element, a second capacitance element, a first inductance element and a second inductance element, wherein a first end of the first capacitance element is connected with the input end, a second end of the first capacitance element is respectively connected with the first inductance element and a first end of the second inductance element, a second end of the second inductance element is respectively connected with a first end of the second capacitance element and an output end of the combiner, a second end of the first inductance element is grounded, and a second end of the second capacitance element is grounded.
2. The combiner of claim 1, wherein the first inductive element and the second inductive element are each metal bonding wires.
3. The combiner of claim 2, wherein the metal bonding wire is gold wire, aluminum wire, or copper wire.
4. The combiner of claim 1, wherein the first capacitive element and the second capacitive element are both metal oxide semiconductor capacitors.
5. The combiner of claim 1, wherein the first capacitive element and the second capacitive element are each ceramic capacitors.
6. The combiner of claim 1, further comprising a substrate, the first capacitive element, the second capacitive element, the first inductive element, and the second inductive element being disposed on the substrate.
7. The combiner of claim 1, wherein the first inductive element is a first microstrip line having an electrical length less than 90 degrees.
8. The combiner of claim 1, wherein the second inductive element is a second microstrip line having an electrical length less than 90 degrees.
9. A chip, characterized in that it is integrated with a combiner according to any of claims 1-8.
10. A radio frequency power assembly, characterized in that it comprises a combiner according to any of claims 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201911136389.1A CN112910428B (en) | 2019-11-19 | 2019-11-19 | Combiner, chip and radio frequency power amplifier |
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| CN201911136389.1A CN112910428B (en) | 2019-11-19 | 2019-11-19 | Combiner, chip and radio frequency power amplifier |
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| CN112910428A CN112910428A (en) | 2021-06-04 |
| CN112910428B true CN112910428B (en) | 2024-03-01 |
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| CN108172956A (en) * | 2017-11-16 | 2018-06-15 | 上海华为技术有限公司 | A kind of microwave combiner |
| WO2019179487A1 (en) * | 2018-03-22 | 2019-09-26 | 上海唯捷创芯电子技术有限公司 | Balanced radio frequency power amplifier, chip and communication terminal |
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