CN112910428A - Combiner, chip and radio frequency power amplifier - Google Patents
Combiner, chip and radio frequency power amplifier Download PDFInfo
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- CN112910428A CN112910428A CN201911136389.1A CN201911136389A CN112910428A CN 112910428 A CN112910428 A CN 112910428A CN 201911136389 A CN201911136389 A CN 201911136389A CN 112910428 A CN112910428 A CN 112910428A
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- 238000010295 mobile communication Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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Abstract
The application discloses combiner, including first capacitive element, second capacitive element, first inductive element and second inductive element, wherein, first capacitive element's first end and input are connected, first capacitive element's second end and first inductive element and second inductive element's first end are connected respectively, second inductive element's second end and second capacitive element's first end and combiner's output are connected respectively, first inductive element's second end ground connection, second capacitive element's second end ground connection. By presetting the capacitance or inductance of each capacitance element and inductance element, the impedance frequency response characteristic of the combiner can be reverse frequency dispersion in a preset working frequency band. In the radio frequency power assembly, after the combiner is cascaded with a forward frequency dispersion circuit, the forward frequency dispersion can be partially or completely counteracted, the total frequency dispersion is reduced, and the bandwidth performance of the radio frequency power assembly is improved.
Description
Technical Field
The application relates to the technical field of communication, in particular to a combiner, a chip and a radio frequency power amplifier.
Background
In a mobile communication system, a combiner is applied to a radio frequency power component such as a radio frequency power amplifier. The radio frequency power amplifier may amplify a radio frequency signal. As shown in fig. 1, the rf power amplifier for signal amplification mainly includes a power divider, a power transistor, a matching circuit, and a combiner. The radio frequency carrier signal is firstly divided into multiple paths of sub-signals through the power divider and enters the respective amplifying branch, each sub-signal is subjected to power amplification through the power tube on the respective amplifying branch and then is transmitted to the same combiner, the output matching circuit corresponding to each power tube is used for converting the combiner point impedance to the equivalent load impedance of the output end pin of each power tube, the combiner combines all the sub-signals into a final output signal, and converts the load impedance of the load device connected with the output end of the radio frequency power amplifier to the combiner point impedance, so that the gain, the efficiency and the power performance of the power tube meeting the design requirements are realized. The phase compensation input by the input phase line or the output phase line of each amplifier branch ensures that the signals output by all the amplifying branches have equal phase at the combination point so as to obtain the optimal power combination.
One problem in some rf power components is that the frequency response characteristic of the output matching circuit of the power tube is forward frequency dispersion during the impedance transformation process. The forward frequency dispersion caused by the output matching circuit cannot be completely avoided, but most of the existing combiners (such as 1/4 wavelength microstrip line combiners, LC combiners, CL combiners and the like) have the frequency response characteristic of the forward frequency dispersion in the process of impedance conversion. After the output matching circuit and the combiner are cascaded, the total frequency dispersion can be expanded in a forward direction, and the bandwidth performance of the radio frequency power component can be deteriorated due to the overlarge total frequency dispersion.
Disclosure of Invention
The embodiment of the application provides a combiner, and on a preset working frequency band, the impedance frequency response characteristic of the combiner is reverse frequency dispersion. In the radio frequency power assembly, after the combiner is cascaded with the output matching circuit of the power tube, the forward frequency dispersion brought by the output matching circuit can be partially or completely counteracted, thereby reducing the total frequency dispersion and improving the bandwidth performance of the radio frequency power assembly.
The embodiment of the application also provides a chip and a radio frequency power assembly.
A first aspect of the present application provides a combiner, which is applied to a radio frequency power assembly, where the radio frequency power assembly includes a power divider, a first power amplifying circuit, a second power amplifying circuit, and a combiner.
In the radio frequency power assembly, a power divider is connected with first ends of a first power amplifying circuit and a second power amplifying circuit; the second end of the first power amplifying circuit is connected with the input end of the combiner, the second end of the second power amplifying circuit is connected with the input end of the combiner, and the output end of the combiner is connected with the load.
The combiner comprises a first capacitor element, a second capacitor element, a first inductor element and a second inductor element, wherein the first end of the first capacitor element is connected with the input end, the second end of the first capacitor element is respectively connected with the first ends of the first inductor element and the second inductor element, the second end of the second inductor element is respectively connected with the first end of the second capacitor element and the output end of the combiner, the second end of the first inductor element is grounded, and the second end of the second capacitor element is grounded.
Through theoretical research and simulation verification, the frequency response characteristic of the combiner can change on different frequency bands, namely the frequency response characteristic of the combiner can be forward frequency dispersion and also can be reverse frequency dispersion, and the combiner can be enabled to be reverse frequency dispersion on a preset working frequency band by presetting parameters of basic elements in a combiner circuit. In the radio frequency power assembly, after the combiner is cascaded with the output matching circuit of the power tube, the forward frequency dispersion brought by the output matching circuit can be partially or completely counteracted, thereby reducing the total frequency dispersion and improving the bandwidth performance of the radio frequency power assembly.
In a first possible implementation manner of the first aspect, the first inductance element and the second inductance element are both metal bonding wires.
In a second possible implementation manner of the first aspect, the metal bonding wire is a gold wire, an aluminum wire, or a copper wire, so as to reduce insertion loss of the combiner.
In a third possible implementation manner of the first aspect, the first capacitor element and the second capacitor element are both metal oxide semiconductor capacitors, and the Q value (quality factor) of the metal oxide semiconductor capacitors is high, so that the insertion loss of the combiner can be reduced.
In a fourth possible implementation manner of the first aspect, the first capacitor element and the second capacitor element are both ceramic capacitors, and the ceramic capacitors are also capacitor elements with higher Q values (quality factors), so that insertion loss of the combiner can be reduced.
In a fifth possible implementation manner of the first aspect, the combiner further includes a substrate, where the first capacitor element, the second capacitor element, the first inductor element, and the second inductor element are disposed on the substrate, and the first capacitor element, the second capacitor element, the first inductor element, and the second inductor element are disposed on one substrate and connected to each other, so as to facilitate packaging.
In a sixth possible implementation manner of the first aspect, the first inductance element is a first microstrip line, an electrical length of the first microstrip line is smaller than 90 degrees, an electrical characteristic of the short microstrip line with the electrical length smaller than 90 degrees is close to that of the metal bonding line, and when the metal bonding line cannot be used as the first inductance element, the first microstrip line may be used instead.
In a seventh possible implementation manner of the first aspect, the second inductance element is a second microstrip line, an electrical length of the second microstrip line is smaller than 90 degrees, an electrical characteristic of the short microstrip line with the electrical length smaller than 90 degrees is close to that of the metal bonding line, and when the metal bonding line cannot be used as the second inductance element, the second microstrip line may be used instead.
A second aspect of the present application provides a chip integrated with a combiner as described in the first aspect or any one of the possible implementations of the first aspect.
A third aspect of the present application provides a radio frequency power component, which includes a combiner as described in the first aspect or any one of the possible implementation manners of the first aspect.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic diagram of a structure of a radio frequency power amplifier;
fig. 2 is a schematic diagram of an embodiment of a combiner provided in an embodiment of the present application;
fig. 3 is a schematic diagram of an impedance variation curve of a combiner provided in an embodiment of the present application;
fig. 4 is a schematic diagram of another embodiment of a combiner provided in an embodiment of the present application;
fig. 5 is a schematic diagram of another embodiment of a combiner provided in an embodiment of the present application;
fig. 6 is a schematic diagram of another embodiment of a combiner provided in an embodiment of the present application;
fig. 7 is a schematic diagram of another embodiment of a combiner provided in an embodiment of the present application;
fig. 8 is a schematic diagram of another embodiment of a combiner provided in an embodiment of the present application;
fig. 9 is a schematic diagram of another embodiment of the combiner provided in the embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms "first," "second," and the like in the description and in the claims of the present application and in the above-described drawings are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It will be appreciated that the data so used may be interchanged under appropriate circumstances such that the embodiments described herein may be practiced otherwise than as specifically illustrated or described herein. Moreover, the terms "comprises," "comprising," and any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or modules is not necessarily limited to those steps or modules explicitly listed, but may include other steps or modules not expressly listed or inherent to such process, method, article, or apparatus. The division of the modules presented in this application is a logical division, and may be implemented in other ways in practical applications, for example, a plurality of modules may be combined or integrated into another system, or some features may be omitted, or not implemented.
In addition, in the present application, unless otherwise expressly specified or limited, the terms "connected," "disposed," and the like are to be construed broadly and can include, for example, fixed connections, removable connections, or integral connections; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or may be connected through the interconnection of two elements or through the interaction of two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The combiner provided by the embodiment of the application can be applied to radio frequency power components integrated on wireless communication equipment such as a base station, for example, a radio frequency power amplifier for amplifying wireless signal power, and can also be applied to any radio frequency processing equipment or circuit which needs to perform impedance transformation or radio frequency signal synthesis, for example, a radio frequency filter, an antenna, a radio frequency small signal board, a repeater, a frequency conversion circuit, a modulator and the like. In a mobile communication system, user data to be transmitted is modulated onto a radio frequency carrier signal at the radio frequency front end of a base station or a user terminal, and the radio frequency carrier signal is amplified by a radio frequency power amplifier and then transmitted to other base stations or user terminals in space through an antenna.
The embodiment of the application provides a combiner, and the frequency response characteristic of the combiner can change in different frequency bands, that is, the frequency response characteristic of the combiner can be forward frequency dispersion or reverse frequency dispersion, and the combiner can be enabled to have reverse frequency dispersion in a preset working frequency band by presetting parameters of basic elements in a circuit of the combiner. In the radio frequency power assembly, after the combiner is cascaded with the output matching circuit of the power tube, the forward frequency dispersion brought by the output matching circuit can be partially or completely counteracted, thereby reducing the total frequency dispersion and improving the bandwidth performance of the radio frequency power assembly.
Fig. 2 is a schematic diagram of an embodiment of a combiner 20 according to an embodiment of the present application.
As shown in fig. 2, the combiner may be applied to the rf power module 10. As a simple example, the radio frequency power assembly 10 may include a power divider 30, a first power amplifying circuit 40, a second power amplifying circuit 50, and the combiner 20.
The power divider 30 is connected to first ends of the first power amplifier circuit 40 and the second power amplifier circuit 50.
A second end of the first power amplifying circuit 40 is connected to the input end of the combiner 20, a second end of the second power amplifying circuit 50 is connected to the input end of the combiner 20, and the output end of the combiner 20 is connected to the load.
The combiner 20 includes a first capacitive element 201, a second capacitive element 202, a first inductive element 203, and a second inductive element 204, wherein a first end of the first capacitive element 201 is connected to an input end of the combiner 20, a second end of the first capacitive element 201 is connected to first ends of the first inductive element 203 and the second inductive element 204, a second end of the second inductive element 204 is connected to a first end of the second capacitive element 202 and an output end of the combiner 20, a second end of the first inductive element 203 is grounded, and a second end of the second capacitive element 202 is grounded.
Through theoretical research and simulation verification, the impedance variation curve of the combiner provided by the embodiment of the application can be represented as a curve shown in fig. 3 on a smith (smith) chart, the curve is intersected to form a shape similar to a circle, and the straight line direction from the low-frequency point impedance position to the high-frequency point impedance position is in a counterclockwise direction relative to the circle center of the smith chart on the right half side of the circle. The shape of this impedance curve indicates that the frequency response characteristic of the combiner is inverse frequency dispersion in the frequency band corresponding to the right half of the "circle". Through software simulation, researchers can preset capacitance values corresponding to the first capacitive element 201 and the second capacitive element 202 and inductance values corresponding to the first inductive element 203 and the second inductive element 204, so that the frequency response characteristic of the combiner is reverse frequency dispersion in a preset operating frequency band (for example, 2500 megahertz (MHz) to 2700MHz shown in fig. 3), thereby partially or completely canceling forward frequency dispersion caused by a matching circuit in the first power amplifying circuit 40 and/or the second power amplifying circuit 50, and improving the bandwidth performance of the radio frequency power assembly 10.
Alternatively, the first inductance element 203 and the second inductance element 204 may be metal bonding wires. The inductance values required by the first inductance element 203 and the second inductance element 204 can be adjusted by selecting metal bonding wires with different specifications.
Preferably, the metal bonding wires used for the first inductance element 203 and the second inductance element 204 may be gold wires, aluminum wires, or copper wires, so as to reduce insertion loss of the combiner.
Optionally, the first capacitor element 201 and the second capacitor element 202 may adopt capacitors with high Q values (high quality factor) such as metal oxide semiconductor capacitors or ceramic capacitors, so as to reduce insertion loss of the combiner.
In one possible implementation manner, the whole circuit structure of the combiner may be packaged as a single component to be integrally packaged in a single board surface mount manner.
Optionally, as shown in fig. 4, the combiner 20 may further include a substrate 205.
Specifically, the first capacitive element 201, the second capacitive element 202, the first inductive element 203, and the second inductive element 204 are disposed on the substrate 205. The substrate 205 is further provided with a transmission line and a radio frequency ground, the first capacitive element 201 and the second capacitive element 202 are pasted to the transmission line or the radio frequency ground by using a single-layer or multi-layer flat capacitor, and the first inductive element 203 and the second inductive element 204 may be metal bonding lines and connected to the transmission line or the radio frequency ground by using a bonding process, so as to implement the basic circuit structure shown in fig. 2.
Optionally, as shown in fig. 5, the first capacitive element 201, the second capacitive element 202, the first inductive element 203, and the second inductive element 204 in the combiner 20 may be lumped capacitive devices and lumped inductive devices that are originally integrated on the substrate 205, and this packaging method is more suitable for mass production on a production line. However, due to the existence of the parasitic parameters of the lumped parameter elements (such as the lumped capacitors and the lumped inductors) themselves, researchers need to substitute the parasitic parameters into the simulation during design, so that the frequency response characteristic of the combiner is the inverse frequency dispersion in the preset operating frequency band.
In a specific embodiment, the electrical characteristics of the short microstrip line (the electrical length is less than 90 degrees) are close to the metal bonding line, so that in a scenario where the inductance values required by the first inductance element 203 and the second inductance element 204 are small, the short microstrip line may be used to replace the bonding line as the first inductance element 203 or the second inductance element 204. In some scenarios, when the metal bonding wire is used as the first inductance element 203 or the second inductance element 204, the distance between the position of the metal bonding wire and the peripheral element is too short, and the processing equipment cannot perform bonding processing, and at this time, the metal bonding wire may be replaced by a short microstrip line to be used as the first inductance element 203 or the second inductance element 204. In addition, compared with a metal bonding wire, the short microstrip line has advantages in power capacity, heat dissipation, coupling and the like. It should be noted that the short microstrip line can be used to replace the metal bonding line as the first inductance element 203 or the second inductance element 204 only in a scenario where the inductance values required by the first inductance element 203 and the second inductance element 204 are small.
In one possible design, only one of the inductance values required for the first and second inductance elements 203 and 204 may be small, or both may be small. As shown in fig. 6, when the inductance required by the first inductance element 203 is small and the inductance required by the second inductance element 204 is large, a short microstrip line M1 can be selected as the first inductance element 203. Alternatively, as shown in fig. 7, when the inductance required by the first inductance element 203 is larger and the inductance required by the second inductance element 204 is smaller, a short microstrip line M2 may be selected as the second inductance element 204. Alternatively, as shown in fig. 8, when the inductance values required by the first inductance element 203 and the second inductance element 204 are both small, a short microstrip line M1 may be selected as the first inductance element 203, and a short microstrip line M2 may be selected as the second inductance element 204.
Further, a basic circuit structure formed by the first capacitive element, the second capacitive element, the first inductive element and the second inductive element in the combiner 20 may be expanded in a cascade manner, as shown in fig. 9. In this topology, the total amount of the capacitive element and the inductive element of the combiner 20 is not limited to the first capacitive element, the second capacitive element, the first inductive element, and the second inductive element, and may include a third capacitive element, a fourth capacitive element, a third inductive element, a fourth inductive element, and so on. An inductance element and a capacitance element form a primary basic circuit, and the inductance value and the capacitance value of the inductance element and the capacitance element in each primary basic circuit are determined through simulation experiments. With this topology, the reverse frequency dispersion effect of the combiner 20 can be enhanced, but the insertion loss can also be increased.
The embodiment of the present application further provides a chip, which is integrated with the combiner as described in any of the above embodiments.
Optionally, the chip may be an integrated power amplifier chip integrated with a radio frequency power amplifier, or may be a combiner chip separately integrated with one or more combiners as described in any of the embodiments above.
Embodiments of the present application further provide a radio frequency power component, which may include a combiner as described in any of the above embodiments. In particular, the radio frequency power component may be a radio frequency power amplifier.
Finally, it should be noted that: the principles and embodiments of the present application are explained herein using specific examples, which are provided only to help understand the method and its core ideas of the present application and not to limit the same; although the technical solutions of the present application have been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily made by those skilled in the art within the technical scope of the present invention will be covered by the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A combiner is characterized in that the combiner is applied to a radio frequency power assembly, and the radio frequency power assembly comprises a power divider, a first power amplifying circuit, a second power amplifying circuit and the combiner;
the power divider is connected with the first ends of the first power amplifying circuit and the second power amplifying circuit;
the second end of the first power amplifying circuit is connected with the input end of the combiner, the second end of the second power amplifying circuit is connected with the input end of the combiner, and the output end of the combiner is connected with a load;
the combiner comprises a first capacitor element, a second capacitor element, a first inductor element and a second inductor element, wherein a first end of the first capacitor element is connected with the input end, a second end of the first capacitor element is respectively connected with first ends of the first inductor element and the second inductor element, a second end of the second inductor element is respectively connected with a first end of the second capacitor element and the output end of the combiner, a second end of the first inductor element is grounded, and a second end of the second capacitor element is grounded.
2. The combiner of claim 1, wherein the first inductive element and the second inductive element are both metal bond wires.
3. The combiner of claim 2, wherein the metal bonding wire is a gold wire, an aluminum wire, or a copper wire.
4. The combiner of claim 1, wherein the first capacitive element and the second capacitive element are both metal oxide semiconductor capacitors.
5. The combiner of claim 1, wherein the first capacitive element and the second capacitive element are both ceramic capacitors.
6. The combiner of claim 1, further comprising a substrate on which the first capacitive element, the second capacitive element, the first inductive element, and the second inductive element are disposed.
7. The combiner of claim 1, wherein the first inductive element is a first microstrip line having an electrical length of less than 90 degrees.
8. The combiner of claim 1, wherein the second inductive element is a second microstrip having an electrical length of less than 90 degrees.
9. A chip integrated with a combiner according to any of claims 1-8.
10. A radio frequency power module, characterized in that it comprises a combiner according to any of claims 1-8.
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| CN201911136389.1A CN112910428B (en) | 2019-11-19 | 2019-11-19 | Combiner, chip and radio frequency power amplifier |
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| CN201911136389.1A CN112910428B (en) | 2019-11-19 | 2019-11-19 | Combiner, chip and radio frequency power amplifier |
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102137518A (en) * | 2010-01-25 | 2011-07-27 | 上海华为技术有限公司 | Doherty power amplifier and multi-frequency band signal parameter adjusting device |
| CN103326671A (en) * | 2013-06-25 | 2013-09-25 | 浙江三维无线科技有限公司 | Wideband efficient Doherty power amplifier suitable for low frequency range |
| WO2015074249A1 (en) * | 2013-11-22 | 2015-05-28 | 海能达通信股份有限公司 | Wireless mobile communications terminal and transceiver system thereof |
| CN105634417A (en) * | 2016-01-28 | 2016-06-01 | 锐迪科微电子（上海）有限公司 | Multi-band radio frequency power amplifier |
| CN106506027A (en) * | 2016-09-22 | 2017-03-15 | 北京工业大学 | A kind of radio transceiver circuit |
| CN106911355A (en) * | 2017-03-03 | 2017-06-30 | 上海华为技术有限公司 | A kind of signal transmitting apparatus, signal transmission system and method |
| CN107425814A (en) * | 2017-08-07 | 2017-12-01 | 杭州电子科技大学 | A kind of broadband Doherty power amplifier based on compensation parasitic capacitance |
| CN108172956A (en) * | 2017-11-16 | 2018-06-15 | 上海华为技术有限公司 | A kind of microwave combiner |
| CN109787569A (en) * | 2017-11-14 | 2019-05-21 | 锐迪科微电子科技（上海）有限公司 | A kind of multimode multi-frequency radio frequency power amplifier |
| WO2019179487A1 (en) * | 2018-03-22 | 2019-09-26 | 上海唯捷创芯电子技术有限公司 | Balanced radio frequency power amplifier, chip and communication terminal |
-
2019
- 2019-11-19 CN CN201911136389.1A patent/CN112910428B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102137518A (en) * | 2010-01-25 | 2011-07-27 | 上海华为技术有限公司 | Doherty power amplifier and multi-frequency band signal parameter adjusting device |
| CN103326671A (en) * | 2013-06-25 | 2013-09-25 | 浙江三维无线科技有限公司 | Wideband efficient Doherty power amplifier suitable for low frequency range |
| WO2015074249A1 (en) * | 2013-11-22 | 2015-05-28 | 海能达通信股份有限公司 | Wireless mobile communications terminal and transceiver system thereof |
| CN105634417A (en) * | 2016-01-28 | 2016-06-01 | 锐迪科微电子（上海）有限公司 | Multi-band radio frequency power amplifier |
| CN106506027A (en) * | 2016-09-22 | 2017-03-15 | 北京工业大学 | A kind of radio transceiver circuit |
| CN106911355A (en) * | 2017-03-03 | 2017-06-30 | 上海华为技术有限公司 | A kind of signal transmitting apparatus, signal transmission system and method |
| CN107425814A (en) * | 2017-08-07 | 2017-12-01 | 杭州电子科技大学 | A kind of broadband Doherty power amplifier based on compensation parasitic capacitance |
| CN109787569A (en) * | 2017-11-14 | 2019-05-21 | 锐迪科微电子科技（上海）有限公司 | A kind of multimode multi-frequency radio frequency power amplifier |
| CN108172956A (en) * | 2017-11-16 | 2018-06-15 | 上海华为技术有限公司 | A kind of microwave combiner |
| WO2019179487A1 (en) * | 2018-03-22 | 2019-09-26 | 上海唯捷创芯电子技术有限公司 | Balanced radio frequency power amplifier, chip and communication terminal |
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