CN103326671A - Wideband efficient Doherty power amplifier suitable for low frequency range - Google Patents
Wideband efficient Doherty power amplifier suitable for low frequency range Download PDFInfo
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- CN103326671A CN103326671A CN2013102574078A CN201310257407A CN103326671A CN 103326671 A CN103326671 A CN 103326671A CN 2013102574078 A CN2013102574078 A CN 2013102574078A CN 201310257407 A CN201310257407 A CN 201310257407A CN 103326671 A CN103326671 A CN 103326671A
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Abstract
The invention relates to a wideband efficient Doherty power amplifier suitable for the low frequency range. The wideband efficient Doherty power amplifier mainly comprises a front-stage driving power amplifier and a last-stage power amplifier, the front-stage driving power amplifier is composed of a lumped parameter topological structure I, a driving power amplifier, a branching bridge and a load, the last-stage driving power amplifier is composed of a lumped parameter topological structure II, a lumped parameter topological structure III, a carrier power amplifier, a peak value power amplifier and a microstrip line combiner, the front-stage driving power amplifier works at AB-type bias, the carrier power amplifier of the last-stage power amplifier works at AB-type bias, a symmetric Doherty structure is adopted, and the peak value power amplifier works at C-type bias. The wideband efficient Doherty power amplifier suitable for the low frequency range has the advantages that by the structure, efficiency of a radio-frequency power amplifier can be effectively improved; the lumped parameter topological structures are added at the input ends of the front-stage driving power amplifier and the last-stage power amplifier, so that bandwidth of the power amplifiers can be greatly increased, input standing waves of the power amplifiers can be improved, interstage matching difficulty can be lowered, and production efficiency can be raised.
Description
Technical field
The present invention relates to moving communicating field, especially a kind of efficient broadband Doherty power amplifier that is applicable to low-frequency range.
Background technology
At present, mobile communication product is increasingly broadband, miniaturization, the TD-RRU product that is applied to 4G not only requires efficient high, and more and more broadband, each large power tube producer releases their broadband power amplifier pipe successively, possess broadbandly such as the integrated power tube of GaN material, but this cost is very high, is not optimal selection.The LDMOS power tube of current main flow also can its bandwidth of broadening under certain matching way, and the amplifier technology that adopts simultaneously the Doherty structure is the most effective technology of raising the efficiency at present.
Summary of the invention
The present invention will solve the shortcoming of above-mentioned prior art, and a kind of efficient broadband Doherty power amplifier that is applicable to low-frequency range of energy Effective Raise efficiency of RF power amplifier is provided.
The present invention solves the technical scheme that its technical problem adopts: this efficient broadband Doherty power amplifier that is applicable to low-frequency range, comprise that mainly prime drives power amplifier and final stage power amplifier, prime drives power amplifier by lumped parameter topological structure I, drive power amplifier, electric bridge and load form along separate routes, final stage power amplifier is by lumped parameter topological structure II, lumped parameter topological structure III, carrier power amplifier, peak value power amplifier and microstrip line mixer form, prime drives power amplifier and is operated in the biasing of AB class, the carrier power amplifier of final stage power amplifier is operated in the biasing of AB class, and adopt symmetrical Doherty structure, its peak work is put and is operated in the biasing of C class.
Described lumped parameter topological structure I, lumped parameter topological structure II and lumped parameter topological structure III, cascaded structure by electric capacity, inductance composition, lumped parameter topological structure I links to each other with the input that prime drives power amplifier, lumped parameter topological structure II, lumped parameter topological structure III link to each other with the carrier power amplifier of final stage and the input of peak value power amplifier respectively, and lumped parameter topological structure II has identical characteristic with the capacitor and inductor of lumped parameter topological structure III series connection.
Described shunt electric bridge links to each other with the output that prime drives power amplifier.
Described driving power amplifier and carrier power amplifier realize by the LDMOS amplifier tube, and are biased in AB class magnifying state.
Described load is realized by 50 Ohmic resistances, links to each other with the isolation end of shunt electric bridge.
Described peak value power amplifier is realized by the LDMOS amplifier tube, and is biased in C class magnifying state.
-90 degree outputs of described carrier power amplifier input and shunt electric bridge link to each other, and 0 degree phase shifter output terminal of peak value power amplifier input and shunt electric bridge links to each other.
The effect that the present invention is useful is: the efficient of structure energy Effective Raise radio-frequency power amplifier of the present invention, and the input at prime driving power amplifier and final stage power amplifier increases the lumped parameter topological structure simultaneously, can greatly increase the bandwidth of power amplifier; Improve the input standing wave of power amplifier, reduce the difficulty of interstage matched, enhance productivity.
Description of drawings
Accompanying drawing 1 is bandwidth-efficient doherty theory diagram of the present invention;
Accompanying drawing 2 is that prime of the present invention drives the power amplifier theory diagram;
Accompanying drawing 3 is final stage power amplifier theory diagrams of the present invention.
Embodiment
The invention will be further described below in conjunction with accompanying drawing:
As shown in the figure, this efficient broadband Doherty power amplifier that is applicable to low-frequency range, comprise that mainly prime drives power amplifier and final stage power amplifier, prime drives power amplifier by lumped parameter topological structure I, drive power amplifier, electric bridge and load form along separate routes, final stage power amplifier is by lumped parameter topological structure II, lumped parameter topological structure III, carrier power amplifier, peak value power amplifier and microstrip line mixer form, prime drives power amplifier and is operated in the biasing of AB class, can improve like this linearity and the efficient performance that drive power amplifier, the carrier power amplifier of final stage power amplifier is operated in the biasing of AB class, and adopt symmetrical Doherty structure, its peak work is put and is operated in the biasing of C class, greatly improves final stage power amplifier efficient when the 8dB rollback.Drive power amplifier and final stage power amplifier and all be in the efficiency operation state, realize the high efficiency of high PAR peak to average ratio signal is amplified.The input that simultaneously drives power amplifier and final stage power amplifier in prime increases the lumped parameter topological structure, can greatly increase power amplifier bandwidth, improve the input standing wave of power amplifier.Lumped parameter topological structure I, lumped parameter topological structure II and lumped parameter topological structure III, cascaded structure by electric capacity, inductance composition, lumped parameter topological structure I links to each other with the input that prime drives power amplifier, lumped parameter topological structure II, lumped parameter topological structure III link to each other with the carrier power amplifier of final stage and the input of peak value power amplifier respectively, lumped parameter topological structure II has identical characteristic with the capacitor and inductor of lumped parameter topological structure III series connection, guarantees that carrier power amplifier is consistent with phase place with peak value power amplifier input amplitude.Electric bridge links to each other with the output that prime drives power amplifier along separate routes, the road radiofrequency signal that drives power amplifier is divided into the two-way amplitude identical, the radiofrequency signal of phase phasic difference 90 degree.Load is realized by 50 Ohmic resistances, links to each other with the isolation end of shunt electric bridge, is used for absorbed power.
Prime drives the power amplifier theory diagram as shown in Figure 2.The cascaded structure that lumped parameter topological structure I is comprised of electric capacity, inductance, according to LC series resonance principle, the impedance of seeing into from input is
Can find out, work as f=f
sThe time, impedance is real impedance; Work as f〉f
sThe time, be perception; As f＜f
sThe time, be capacitive.According to smith circle diagram impedance matching principle, know that by following formula low frequency is capacitive, and series capacitance is counterclockwise rotated on smith circle diagram impedance diagram, and high frequency points is perception, and series inductance clockwise direction on smith circle diagram impedance diagram rotates, high frequency points and low frequency rotate in the opposite direction like this, just the low frequency in certain bandwidth and high frequency points all can be tried one's best distortion in the place of smith circle diagram near 50 ohm, reach the purpose of Bandwidth.Because it is very little that the lumped parameter capacitor and inductor is operated in parasitic capacitance, the stray inductance impact of low-frequency range (GHz is following) generation, so can come spread bandwidth with series capacitance and inductance, in Bandwidth, greatly improve the input standing wave of power amplifier, also be conducive to the cascade of multistage power amplifier.By changing the value of inductance and electric capacity, find the optimum resonance point in addition, improve its input standing wave, reduce the difficulty of interstage matched, enhance productivity, compare than traditional microstrip line with the serial inductor capacitance method, save the PCB area, can make device miniaturization.
Drive power amplifier and carrier power amplifier and realize by the LDMOS amplifier tube, and be biased in AB class magnifying state, the energy Effective Raise drives linearity and the efficient of power amplifier.The LDMOS that drives power amplifier is biased in the AB class, take into account the radiofrequency characteristicses such as linear and efficient, by changing the inductance capacitance value of lumped parameter topological structure I, find suitable resonance point, broadening drives the power amplifier bandwidth, improve simultaneously driving power amplifier input standing wave, reduce the difficulty of interstage matched, make it reach optimum performance.The peak value power amplifier passes through the LDMOS amplifier tube to be realized, and is biased in C class magnifying state, can guarantee that like this power amplifier has very high efficient when rollback 8dB.The microstrip line mixer realizes that the power of final stage power amplifier two-way radiofrequency signal is synthetic, also has the function of impedance transformation.When the peak value power amplifier is closed, the output impedance of carrier power amplifier is transformed to 100 ohm; Discharge when entirely opening in its peak work, the output impedance of carrier power amplifier is transformed to 50 ohm.
Final stage power amplifier (as shown in Figure 3) adopts symmetrical Doherty structure, and the linear ratio unsymmetric structure of this symmetrical structure in the DPD situation will be got well.-90 degree outputs of carrier power amplifier input and shunt electric bridge link to each other, 0 degree phase shifter output terminal of peak value power amplifier input and shunt electric bridge links to each other, by changing the inductance capacitance value of lumped parameter topological structure II, lumped parameter topological structure III, find suitable resonance point, broadening final stage power amplifier bandwidth, improve simultaneously final stage power amplifier input standing wave, reduce the difficulty of interstage matched, make it reach optimum performance.Carrier power amplifier and peak value power amplifier all are to realize by the LDMOS amplifier tube.Carrier power amplifier is operated in AB class magnifying state, and its peak work is put and is operated in C class magnifying state.Carrier power amplifier and peak value power amplifier output respectively have a field offset amount, are the phase places of adjusting carrier power amplifier and peak value power amplifier.The microstrip line mixer is comprised of two sections quarter-wave microstrip lines, and one section is 50 ohmages, and another section is 35 ohmages, realizes that the power of two branch road radiofrequency signals of final stage power amplifier is synthetic, also has the function of impedance transformation.When the peak value power amplifier was closed, two sections quarter-wave microstrip lines transformed to 100 ohm to the output impedance of carrier power amplifier; Discharge when entirely opening in its peak work, the output impedance of carrier power amplifier is transformed to 50 ohm.The principle of lumped parameter topological structure II, lumped parameter topological structure III is the same with lumped parameter topological structure I principle, high frequency points and low frequency rotate in the opposite direction, just the low frequency in certain bandwidth and high frequency points all can be tried one's best distortion in the place of smith circle diagram near 50 ohm, reach the purpose of Bandwidth, but lumped parameter topological structure II must have identical characteristic with lumped parameter topological structure III, guarantee that carrier power amplifier is identical with the amplitude of peak value power amplifier, phase difference 90 degree.By changing the inductance capacitance value of lumped parameter topological structure II, lumped parameter topological structure III, find suitable resonance point simultaneously, improve final stage power amplifier input standing wave, reduce the difficulty of interstage matched, make and enhance productivity.
In addition to the implementation, the present invention can also have other execution modes.All employings are equal to the technical scheme of replacement or equivalent transformation formation, all drop on the protection range of requirement of the present invention.
Claims (7)
1. efficient broadband Doherty power amplifier that is applicable to low-frequency range, comprise that mainly prime drives power amplifier and final stage power amplifier, it is characterized in that: prime drives power amplifier and is comprised of lumped parameter topological structure I, driving power amplifier, shunt electric bridge and load, final stage power amplifier is comprised of lumped parameter topological structure II, lumped parameter topological structure III, carrier power amplifier, peak value power amplifier and microstrip line mixer, prime drives power amplifier and is operated in the biasing of AB class, the carrier power amplifier of final stage power amplifier is operated in the biasing of AB class, and adopt symmetrical Doherty structure, its peak work is put and is operated in the biasing of C class.
2. the efficient broadband Doherty power amplifier that is applicable to low-frequency range according to claim 1, it is characterized in that: described lumped parameter topological structure I, lumped parameter topological structure II and lumped parameter topological structure III, by electric capacity, the cascaded structure that inductance forms, lumped parameter topological structure I links to each other with the input that prime drives power amplifier, lumped parameter topological structure II, lumped parameter topological structure III links to each other with the carrier power amplifier of final stage and the input of peak value power amplifier respectively, and lumped parameter topological structure II has identical characteristic with the capacitor and inductor of lumped parameter topological structure III series connection.
3. the efficient broadband Doherty power amplifier that is applicable to low-frequency range according to claim 1 is characterized in that: described shunt electric bridge links to each other with the output that prime drives power amplifier.
4. the efficient broadband Doherty power amplifier that is applicable to low-frequency range of stating according to claim 1 is characterized in that: described driving power amplifier and carrier power amplifier realize by the LDMOS amplifier tube, and are biased in AB class magnifying state.
5. the efficient broadband Doherty power amplifier that is applicable to low-frequency range according to claim 1, it is characterized in that: described load is realized by 50 Ohmic resistances, links to each other with the isolation end of shunt electric bridge.
6. the efficient broadband Doherty power amplifier that is applicable to low-frequency range according to claim 1 is characterized in that: described peak value power amplifier is realized by the LDMOS amplifier tube, and is biased in C class magnifying state.
7. according to claim 1, the 3 or 6 described efficient broadband Doherty power amplifiers that are applicable to low-frequency range, it is characterized in that :-90 degree outputs of described carrier power amplifier input and shunt electric bridge link to each other, and 0 degree phase shifter output terminal of peak value power amplifier input and shunt electric bridge links to each other.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104796089A (en) * | 2014-01-22 | 2015-07-22 | 锐迪科微电子科技（上海）有限公司 | Doherty differential power amplifier employing voltage combination method |
| CN106374860A (en) * | 2016-08-26 | 2017-02-01 | 成都通量科技有限公司 | Doherty power amplifier based on voltage synthesis structure |
| CN111510076A (en) * | 2020-05-18 | 2020-08-07 | 优镓科技(北京)有限公司 | class-AB driven Doherty power amplifier, base station and mobile terminal |
| CN112910428A (en) * | 2019-11-19 | 2021-06-04 | 上海华为技术有限公司 | Combiner, chip and radio frequency power amplifier |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142812A (en) * | 2010-12-17 | 2011-08-03 | 华为技术有限公司 | Doherty power amplifier |
| EP2495871A1 (en) * | 2011-03-03 | 2012-09-05 | Alcatel Lucent | Doherty amplifier comprising different transistor technologies |
| CN202444467U (en) * | 2011-12-31 | 2012-09-19 | 成都芯通科技股份有限公司 | Small-size Doherty circuit adaptable to 1GHz-below radiofrequency communication system |
| CN102801392A (en) * | 2012-09-13 | 2012-11-28 | 电子科技大学 | Radio frequency power amplification device |
-
2013
- 2013-06-25 CN CN201310257407.8A patent/CN103326671B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142812A (en) * | 2010-12-17 | 2011-08-03 | 华为技术有限公司 | Doherty power amplifier |
| EP2495871A1 (en) * | 2011-03-03 | 2012-09-05 | Alcatel Lucent | Doherty amplifier comprising different transistor technologies |
| CN202444467U (en) * | 2011-12-31 | 2012-09-19 | 成都芯通科技股份有限公司 | Small-size Doherty circuit adaptable to 1GHz-below radiofrequency communication system |
| CN102801392A (en) * | 2012-09-13 | 2012-11-28 | 电子科技大学 | Radio frequency power amplification device |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104796089A (en) * | 2014-01-22 | 2015-07-22 | 锐迪科微电子科技（上海）有限公司 | Doherty differential power amplifier employing voltage combination method |
| CN104796089B (en) * | 2014-01-22 | 2018-01-16 | 锐迪科微电子科技（上海）有限公司 | A kind of Doherty difference power amplifiers combined using voltage |
| CN106374860A (en) * | 2016-08-26 | 2017-02-01 | 成都通量科技有限公司 | Doherty power amplifier based on voltage synthesis structure |
| CN112910428A (en) * | 2019-11-19 | 2021-06-04 | 上海华为技术有限公司 | Combiner, chip and radio frequency power amplifier |
| CN112910428B (en) * | 2019-11-19 | 2024-03-01 | 上海华为技术有限公司 | Combiner, chip and radio frequency power amplifier |
| CN111510076A (en) * | 2020-05-18 | 2020-08-07 | 优镓科技(北京)有限公司 | class-AB driven Doherty power amplifier, base station and mobile terminal |
| CN111510076B (en) * | 2020-05-18 | 2023-08-18 | 优镓科技(北京)有限公司 | class-AB driven Doherty power amplifier, base station and mobile terminal |
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| CN103326671B (en) | 2016-09-28 |
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