CN105634417A - Multi-band radio frequency power amplifier - Google Patents
Multi-band radio frequency power amplifier Download PDFInfo
- Publication number
- CN105634417A CN105634417A CN201610058769.8A CN201610058769A CN105634417A CN 105634417 A CN105634417 A CN 105634417A CN 201610058769 A CN201610058769 A CN 201610058769A CN 105634417 A CN105634417 A CN 105634417A
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- power amplifier
- impedance transformation
- transformation unit
- impedance
- radio
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
Abstract
The invention discloses a multi-band radio frequency power amplifier. The multi-band radio frequency power amplifier is a single-stage amplifying circuit or a multistage amplifying circuit composed of two or more single-stage amplifying circuits; each single-stage amplifying circuit is serially connected with an amplifying unit and a matching network between a radio frequency input end and a radio frequency output end in sequence, and one or more impedance transformation units are further connected between the amplifying unit and the matching network; and work or non-work states of each impedance transformation unit are combined with each other, so that the radio frequency power amplifier covers more than two frequency bands. The multi-band radio frequency power amplifier provided by the invention has the technical effect of covering multiple frequency bands, having a simple circuit structure and being convenient to use.
Description
Technical field
The application relates to a kind of radio-frequency power amplifier (RFpoweramplifier).
Background technology
Radio-frequency power amplifier finds broad application in transmitting set (transmitter is abbreviated as TX), transceiver (transceiver is abbreviated as TRX). RF signal power produced by the modulation circuit of transmitter is only small, it is necessary to through a series of amplification, after obtaining enough radio-frequency powers, just can be fed on antenna and to launch. Radio-frequency power amplifier is just used to amplify to obtain sufficiently large radio frequency power output low power radiofrequency signal.
The radio-frequency power amplifier of early stage is generally optimized just for a frequency band. Along with becoming increasingly popular of multimode multi-frequency mobile terminal, the support to multiple frequency ranges increasingly emphasized by present radio-frequency power amplifier.
Application publication number is CN103986422A, Shen Qing Publication day is that the Chinese invention patent application on August 13rd, 2014 discloses a kind of dual band radio frequency power amplifier impedance match circuit. Described impedance matching circuit includes main matching module and the series connection matching module of series connection between radio frequency source and load, is additionally included in matching module in parallel in parallel between series connection matching module and load. When for first frequency, only being carried out impedance matching by main matching module, series connection matching module does not affect impedance matching, and parallel impedance module presents open-circuit condition. When for second frequency, only carried out impedance matching by series connection matching module and matching module in parallel. All without switch inside impedance matching circuit disclosed in the document or between itself and main path, the radiofrequency signal of different frequency automatically selects through main matching module or through series connection matching module and matching module in parallel, and this just makes, and the structure of this impedance matching circuit is more complicated, design cost is high. Application publication number is CN103997305A, Shen Qing Publication day is that the Chinese invention patent application on August 20th, 2014 discloses a kind of three band radio frequencies power amplifier impedance match circuits, and principle is similar, also has same problem.
Application publication number is CN104617893A, Shen Qing Publication day is that the Chinese invention patent application on May 13rd, 2015 discloses a kind of multiband RF power amplifier. Described radio-frequency power amplifier has at least two-stage power tube, between first order power tube and input, there is input matching network, there is between adjacent two-stage power tube inter-stage matching network, between afterbody power tube and outfan, there is output matching network. Input matching network, inter-stage matching network, output matching network at least one connect impedance matching element, by adjust impedance matching element radio-frequency power amplifier just can be made to work in different frequency range. Impedance matching element disclosed in the document is electric capacity, inductance or resistance, and impedance matching element is connected to each matching network by switching device. Switching device can be radio-frequency (RF) switch or relay. If switching device adopts radio-frequency (RF) switch, then being operated in radio frequency band when impedance matching element employing electric capacity and/or inductance and can produce relatively larger voltage swing, this voltage swing even can exceed the control voltage of radio-frequency (RF) switch and make radio-frequency (RF) switch be difficult to turn off and maintain on-state all the time. If switching device adopts relay, the volume of relay is bigger, it is difficult to manufacture and packaging technology with integrated circuit are mutually integrated.
Summary of the invention
Technical problems to be solved in this application are to provide a kind of radio-frequency power amplifier, and amplifying unit therein can all reach best matched load at different frequency range, obtains performance optimization, thus realizing radio-frequency power amplifier to cover plural frequency range.
For solving above-mentioned technical problem, the application multiband RF power amplifier is single-stage amplifying circuit or the multistage amplifier circuit of two or more single-stage amplifying circuit cascade composition. Each single-stage amplifying circuit has been sequentially connected in series again amplifying unit and matching network between rf inputs and RF output end, is also associated with one or more impedance transformation unit between amplifying unit and matching network. Each impedance transformation cell operation or idle state are mutually combined so that described radio-frequency power amplifier covers plural frequency range.
The technique effect that the application obtains there is provided a kind of radio-frequency power amplifier covering multiband, and circuit structure is simple, easy to use.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment one of the application multiband RF power amplifier.
Fig. 2 is the concrete structure schematic diagram one of the embodiment one of the application multiband RF power amplifier.
Fig. 3 is the concrete structure schematic diagram two of the embodiment one of the application multiband RF power amplifier
Fig. 4 is the structural representation of the embodiment two of the application multiband RF power amplifier.
Fig. 5 is the structural representation of the embodiment three of the application multiband RF power amplifier.
Fig. 6 is the implementation schematic diagram of the inductance that the application provides.
Accompanying drawing in figure is labeled as: L1 is inductance one; T1 is power tube; C2 is electric capacity two; L2 is inductance two; T2 is switching tube; C3 is electric capacity three; L3 is inductance three.
Detailed description of the invention
Referring to Fig. 1, this is the embodiment one of the application multiband RF power amplifier. Described radio-frequency power amplifier has been sequentially connected in series amplifying unit and matching network between rf inputs RFin and RF output end RFout, is also associated with impedance transformation unit between amplifying unit and matching network. Described impedance transformation unit comprises switching device, for instance for switching tubes such as HBT (heterojunction bipolar transistor), MOSFET (metal-oxide semiconductor fieldeffect transistor). Described switching device is controlled by signal cont and presents the state of being switched on or switched off, and correspondingly makes impedance transformation cell operation or does not work. When switching device disconnects, impedance transformation unit does not work, and matching network can in first frequency range optimum impedance by the load matched of RF output end RFout to amplifying unit, it is achieved radio-frequency power amplifier covers the first frequency range. When switching device is connected, impedance transformation cell operation, by debugging impedance transformation unit so that the summation of matching network and impedance transformation unit is in second frequency range optimum impedance by the load matched of RF output end to amplifying unit, it is achieved radio-frequency power amplifier covers the second frequency range. Therefore, the embodiment one shown in Fig. 1 provides a kind of dual band radio frequency power amplifier.
Referring to Fig. 2, as a kind of example, described amplifying unit includes inductance one L1 and power tube one T1 of series connection. Another termination running voltage of inductance one L1. The other end ground connection of power tube one T1, rf inputs RFin is connected to the control end of power tube one T1. The link of inductance one L1 and power tube one T1 is as the outfan of amplifying unit. When inputting without radiofrequency signal, power tube one T1 does not work, and amplifying unit does not also just work. When there being radiofrequency signal to input, power tube one T1 just works, and amplifying unit also just works.
Referring still to Fig. 2, as a kind of example, described impedance transformation unit includes electric capacity two C2, inductance two L2 and the switch transistor T 2 that are sequentially connected in series. The other end of electric capacity two C2 is connected to radio-frequency channel, is namely connected to the outfan of amplifying unit and the input of matching network. The other end ground connection of switch transistor T 2, control signal cont is connected to the control end of switch transistor T 2. When control signal is without input, switch transistor T 2 does not work, and impedance transformation unit does not also just work. When control signal has input, switch transistor T 2 just works, and impedance transformation unit also just works.
Referring to Fig. 3, as another kind of example, described impedance transformation unit includes inductance two L2, electric capacity two C2 and the switch transistor T 2 that are sequentially connected in series. The other end of inductance two L2 is connected to radio-frequency channel, is namely connected to the outfan of amplifying unit and the input of matching network. The other end ground connection of switch transistor T 2, control signal cont is connected to the control end of switch transistor T 2. When control signal is without input, switch transistor T 2 does not work, and impedance transformation unit does not also just work. When control signal has input, switch transistor T 2 just works, and impedance transformation unit also just works.
Referring still to Fig. 2, as a kind of example, described matching network includes inductance three L3 and electric capacity three C3. One end of inductance three L3 connects the outfan of amplifying unit and the incoming end of impedance transformation unit, and the other end of inductance three L3 connects RF output end RFout. One end of electric capacity three C3 connects RF output end RFout, the other end ground connection of electric capacity three C3.
Referring to Fig. 4, this is the embodiment two of the application multiband RF power amplifier. Described radio-frequency power amplifier has been sequentially connected in series amplifying unit and matching network between rf inputs RFin and RF output end RFout, is also associated with the impedance transformation unit of two or more (containing two) between amplifying unit and matching network. Each impedance transformation unit comprises switching device, for instance for switching tubes such as HBT, MOS. Each switching device is controlled by different signal cont_1, cont_2 and each presents the state of being switched on or switched off, and correspondingly makes each impedance transformation cell operation or does not work.
In embodiment two shown in Fig. 4, amplifying unit, impedance transformation unit, matching unit also can be as shown in Figure 2 or Figure 3.
In embodiment two shown in Fig. 4, if having n impedance transformation unit (n is natural number), then provide the radio-frequency power amplifier meeting at most 2n frequency band. For n=2, then provide the radio-frequency power amplifier meeting at most four frequency bands. When two impedance transformation unit do not work, matching network can in first frequency range optimum impedance by the load matched of RF output end RFout to amplifying unit, it is achieved radio-frequency power amplifier covers the first frequency range. When impedance transformation unit one works, impedance transformation unit two does not work, when unmodified matching network, by debugging impedance transformation unit one so that the summation of matching network and impedance transformation unit one is in second frequency range optimum impedance by the load matched of RF output end to amplifying unit, it is achieved radio-frequency power amplifier covers the second frequency range. When impedance transformation unit one does not work, impedance transformation unit two works, when unmodified matching network, by debugging impedance transformation unit two so that the summation of matching network and impedance transformation unit two in the 3rd frequency range by the optimum impedance of the load matched of RF output end to amplifying unit, it is achieved radio-frequency power amplifier covering the 3rd frequency range. When two impedance transformation unit all work, when unmodified matching network, by debugging impedance transformation unit one and/or impedance transformation unit two so that the summation of matching network and impedance transformation unit one and/or impedance matching unit two in the 4th frequency range by the optimum impedance of the load matched of RF output end to amplifying unit, it is achieved radio-frequency power amplifier covering the 4th frequency range. Certainly abandon covering one or more frequency range also dependent on needs.
Embodiment one shown in Fig. 1 and the embodiment two shown in Fig. 4 are all single-stage amplifying circuits, for meeting the power amplification demand of radiofrequency signal, are sometimes also required for multiple single-stage amplifying circuit and are in series formation multistage amplifier circuit.
Referring to Fig. 5, this is the embodiment three of the application multiband RF power amplifier. Described radio-frequency power amplifier is sequentially connected in series the single-stage amplifying circuit of two or more (containing two) between rf inputs RFin and RF output end RFout. Each single-stage amplifying circuit can be the embodiment one shown in Fig. 1 or the embodiment two shown in Fig. 4.
The amplifying unit of the exemplary offer of Fig. 2, Fig. 3, impedance transformation unit, matching unit all comprise inductance, electric capacity, power tube and switching tube. In one implementation, inductance, electric capacity, power tube and switching tube are manufactured all in radio-frequency power amplifier nude film (die), for instance all adopt GaAs HBT device to realize. The inductance value of inductance is generally determined by means such as emulation, once after nude film creates, the inductance value of inductance cannot adjust in chip design stage. Emulation would be likely to occur certain deviation, manufactures and is likely to inductance value affect inductance, if deviation relatively greatly, just cannot be applied in high sensitive occasion needed for final produced inductance inductance value and practical application. In another kind of implementation, electric capacity, power tube and switching tube are manufactured all in radio-frequency power amplifier nude film, and inductance is then achieved when this nude film encapsulates. The inductance value of inductance can be carried out the adjustment in a certain degree by the method that realizes of latter inductance.
Refer to Fig. 6, it is assumed that a radio-frequency power amplifier nude film adopts GaAs HBT device to realize, wherein unrealized inductance. This nude film needs to be connected to all or part of contact by metal wire the part or all of pin of substrate when encapsulation, is called routing. This nude film has two contacts of A, B, as contact A, contact B being connected to the same pin (contact on these nude films, the pin on substrate such as externally do not connect) of substrate respectively through two metal line during encapsulation, then just it is made up of an inductance AB between contact A and contact B metal wire. The inductance value of this inductance AB can be adjusted by the length of metal wire, beats metal wire higher to make metal wire longer, beats metal wire relatively low to make metal wire shorter.
Compared with existing scheme, the multiband RF power amplifier of the application has a characteristic that
One, the simple in construction of impedance transformation unit, it is only the electric capacity of series connection, inductance and switching tube. Wherein switching tube determines to turn on and off with main path, it is to avoid design complicated, without the impedance transformation unit of switch.
Its two, each device in impedance transformation unit all can adopt the manufacture of integrated circuit and/or packaging technology to be achieved. Wherein electric capacity and switching tube preferably employ the realization of GaAs HBT device, and inductance preferably employs routing technique and realizes, thus the inductance value of adjustable inductance. Owing to the early stage design of Simulation of radio frequency band exists certain error, therefore the inductance value of its inductance is adjustable, greatly reduces the required precision of chip design stage, thus effectively shortening the chip R&D cycle.
Its three, comprise switching device inside impedance transformation unit, one end ground connection of described switching device, the other end connects electric capacity and/or inductance. When being operated in radio frequency band, even if electric capacity and/or inductance produce relatively larger voltage swing, without affecting turning on and off of switching device.
Its four, owing to comprising electric capacity in impedance transformation unit, therefore can play every straight effect so that impedance transformation unit be absent from direct current electric leakage. This makes impedance transformation unit will not increase the DC power of whole radio-frequency power amplifier, also makes more weak control signal cont_* get final product driving impedance converter unit.
Its five, when impedance transformation unit connect be connected to main path, the inductance of series connection and electric capacity constitute resonance path over the ground. By selecting suitable electric capacity and inductance, it is possible to making the resonant frequency of this resonance path is the secondary frequency by frequency range of radio frequency path main path, and this is equivalent to a second harmonic wave filter, it is suppressed that the second harmonic on radio frequency path, improves the linearity.
These are only the preferred embodiment of the application, be not used to limit the application. For a person skilled in the art, the application can have various modifications and variations. All within spirit herein and principle, any amendment of making, equivalent replacement, improvement etc., should be included within the protection domain of the application.
Claims (10)
1. a multiband RF power amplifier, is characterized in that, for the multistage amplifier circuit that single-stage amplifying circuit or two or more single-stage amplifying circuit cascade are constituted; Each single-stage amplifying circuit has been sequentially connected in series again amplifying unit and matching network between rf inputs and RF output end, is also associated with one or more impedance transformation unit between amplifying unit and matching network; Each impedance transformation cell operation or idle state are mutually combined so that described radio-frequency power amplifier covers plural frequency range.
2. multiband RF power amplifier according to claim 1, it is characterized in that, comprising switching device in each impedance transformation unit, described switching device is controlled by signal and presents the state of being switched on or switched off, and correspondingly makes impedance transformation cell operation or does not work.
3. multiband RF power amplifier according to claim 2, is characterized in that, described switching device is switching tube.
4. multiband RF power amplifier according to claim 1, is characterized in that, impedance transformation unit has n, and n is natural number, then described radio-frequency power amplifier covers at most 2nIndividual frequency band.
5. multiband RF power amplifier according to claim 4, it is characterized in that, when n=1, when impedance transformation unit does not work, matching network is in first frequency range optimum impedance by the load matched of RF output end to amplifying unit, it is achieved radio-frequency power amplifier covers the first frequency range; When impedance transformation cell operation, by debugging impedance transformation unit so that the summation of matching network and impedance transformation unit is in second frequency range optimum impedance by the load matched of RF output end to amplifying unit, it is achieved radio-frequency power amplifier covers the second frequency range.
6. multiband RF power amplifier according to claim 4, it is characterized in that, when n=2, when two impedance transformation unit do not work, matching network is in first frequency range optimum impedance by the load matched of RF output end to amplifying unit, it is achieved radio-frequency power amplifier covers the first frequency range;
When impedance transformation unit one works, impedance transformation unit two does not work, by debugging impedance transformation unit one so that the summation of matching network and impedance transformation unit one is in second frequency range optimum impedance by the load matched of RF output end to amplifying unit, it is achieved radio-frequency power amplifier covers the second frequency range;
When impedance transformation unit one does not work, impedance transformation unit two works, by debugging impedance transformation unit two so that the summation of matching network and impedance transformation unit two in the 3rd frequency range by the optimum impedance of the load matched of RF output end to amplifying unit, it is achieved radio-frequency power amplifier covering the 3rd frequency range;
When two impedance transformation unit all work, by debugging impedance transformation unit one and/or impedance transformation unit two so that the summation of matching network and impedance transformation unit one and/or impedance matching unit two in the 4th frequency range by the optimum impedance of the load matched of RF output end to amplifying unit, it is achieved radio-frequency power amplifier covering the 4th frequency range;
Or, that abandons in above-mentioned covering frequency range is one or more.
7. multiband RF power amplifier according to claim 1, is characterized in that, described impedance transformation unit includes the electric capacity two, inductance two and the switching tube that are sequentially connected in series; The other end of electric capacity two is connected to radio-frequency channel; Control signal is connected to the control end of switching tube.
8. multiband RF power amplifier according to claim 1, is characterized in that, described impedance transformation unit includes the inductance two, electric capacity two and the switching tube that are sequentially connected in series; The other end of inductance two is connected to radio-frequency channel; Control signal is connected to the control end of switching tube.
9. the multiband RF power amplifier according to claim 7 or 8, is characterized in that, described inductance two, electric capacity two and switching tube are all integrated in the nude film of radio-frequency power amplifier.
10. the multiband RF power amplifier according to claim 7 or 8, is characterized in that, described electric capacity two and switching tube are all integrated in the nude film of radio-frequency power amplifier, and metal wire when described inductance two is encapsulated by nude film realizes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201610058769.8A CN105634417A (en) | 2016-01-28 | 2016-01-28 | Multi-band radio frequency power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610058769.8A CN105634417A (en) | 2016-01-28 | 2016-01-28 | Multi-band radio frequency power amplifier |
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| CN105634417A true CN105634417A (en) | 2016-06-01 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106067768A (en) * | 2016-08-12 | 2016-11-02 | 成都泰格微电子研究所有限责任公司 | Mesh power amplifier in broadband |
| CN106849981A (en) * | 2016-12-19 | 2017-06-13 | 力同科技股份有限公司 | Base station radio-frequency signal transmitting and receiving circuit, radio frequency transmitter circuitry and signaling method |
| CN107528548A (en) * | 2017-08-29 | 2017-12-29 | 清华大学 | Broadband multi-frequency power amplifier based on more impedance zero point intermodulation matching networks |
| CN109428505A (en) * | 2017-09-04 | 2019-03-05 | 北京泰龙电子技术有限公司 | A kind of radio-frequency power supply of BREATHABLE BANDWIDTH |
| CN110429929A (en) * | 2019-08-07 | 2019-11-08 | 南京迈矽科微电子科技有限公司 | A kind of quarter-wave long structure millimeter wave switch |
| CN112910428A (en) * | 2019-11-19 | 2021-06-04 | 上海华为技术有限公司 | Combiner, chip and radio frequency power amplifier |
| CN114650069A (en) * | 2020-12-18 | 2022-06-21 | Oppo广东移动通信有限公司 | Radio frequency module, control method thereof and electronic equipment |
| TWI784739B (en) * | 2021-10-06 | 2022-11-21 | 立積電子股份有限公司 | Switch device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080284539A1 (en) * | 2007-05-16 | 2008-11-20 | Matsushita Electric Industrial Co., Ltd. | High frequency circuit, semiconductor device, and high frequency power amplification device |
| CN201956975U (en) * | 2010-12-24 | 2011-08-31 | 上海集成电路研发中心有限公司 | Low-noise amplifier |
| CN102460692A (en) * | 2009-06-29 | 2012-05-16 | 高通股份有限公司 | Integrated power amplifier with load inductor located under ic die |
| CN102484464A (en) * | 2009-08-19 | 2012-05-30 | 高通股份有限公司 | Digital tunable inter-stage matching circuit |
| CN102792599A (en) * | 2009-06-03 | 2012-11-21 | 高通股份有限公司 | Tunable matching circuits for power amplifiers |
| CN104617893A (en) * | 2014-12-31 | 2015-05-13 | 深圳市华信天线技术有限公司 | Multiband radio frequency power amplifier |
| CN104716906A (en) * | 2015-04-03 | 2015-06-17 | 广东工业大学 | Method and circuit structure for improving efficiency of wide-band radio frequency power amplifier |
| CN104901641A (en) * | 2015-04-29 | 2015-09-09 | 中国科学院微电子研究所 | Power amplification structure |
-
2016
- 2016-01-28 CN CN201610058769.8A patent/CN105634417A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080284539A1 (en) * | 2007-05-16 | 2008-11-20 | Matsushita Electric Industrial Co., Ltd. | High frequency circuit, semiconductor device, and high frequency power amplification device |
| CN102792599A (en) * | 2009-06-03 | 2012-11-21 | 高通股份有限公司 | Tunable matching circuits for power amplifiers |
| CN102460692A (en) * | 2009-06-29 | 2012-05-16 | 高通股份有限公司 | Integrated power amplifier with load inductor located under ic die |
| CN102484464A (en) * | 2009-08-19 | 2012-05-30 | 高通股份有限公司 | Digital tunable inter-stage matching circuit |
| CN201956975U (en) * | 2010-12-24 | 2011-08-31 | 上海集成电路研发中心有限公司 | Low-noise amplifier |
| CN104617893A (en) * | 2014-12-31 | 2015-05-13 | 深圳市华信天线技术有限公司 | Multiband radio frequency power amplifier |
| CN104716906A (en) * | 2015-04-03 | 2015-06-17 | 广东工业大学 | Method and circuit structure for improving efficiency of wide-band radio frequency power amplifier |
| CN104901641A (en) * | 2015-04-29 | 2015-09-09 | 中国科学院微电子研究所 | Power amplification structure |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106067768B (en) * | 2016-08-12 | 2023-03-07 | 成都泰格微电子研究所有限责任公司 | Broadband internal matching power amplifier |
| CN106067768A (en) * | 2016-08-12 | 2016-11-02 | 成都泰格微电子研究所有限责任公司 | Mesh power amplifier in broadband |
| CN106849981A (en) * | 2016-12-19 | 2017-06-13 | 力同科技股份有限公司 | Base station radio-frequency signal transmitting and receiving circuit, radio frequency transmitter circuitry and signaling method |
| CN106849981B (en) * | 2016-12-19 | 2020-08-25 | 力同科技股份有限公司 | Base station radio frequency signal transceiving circuit, radio frequency transmitting circuit and signal transmitting method |
| CN107528548A (en) * | 2017-08-29 | 2017-12-29 | 清华大学 | Broadband multi-frequency power amplifier based on more impedance zero point intermodulation matching networks |
| CN109428505A (en) * | 2017-09-04 | 2019-03-05 | 北京泰龙电子技术有限公司 | A kind of radio-frequency power supply of BREATHABLE BANDWIDTH |
| CN110429929A (en) * | 2019-08-07 | 2019-11-08 | 南京迈矽科微电子科技有限公司 | A kind of quarter-wave long structure millimeter wave switch |
| CN112910428A (en) * | 2019-11-19 | 2021-06-04 | 上海华为技术有限公司 | Combiner, chip and radio frequency power amplifier |
| CN112910428B (en) * | 2019-11-19 | 2024-03-01 | 上海华为技术有限公司 | Combiner, chip and radio frequency power amplifier |
| WO2022127438A1 (en) * | 2020-12-18 | 2022-06-23 | Oppo广东移动通信有限公司 | Radio frequency module and control method therefor, and electronic device |
| CN114650069A (en) * | 2020-12-18 | 2022-06-21 | Oppo广东移动通信有限公司 | Radio frequency module, control method thereof and electronic equipment |
| TWI784739B (en) * | 2021-10-06 | 2022-11-21 | 立積電子股份有限公司 | Switch device |
| US11632106B1 (en) | 2021-10-06 | 2023-04-18 | Richwave Technology Corp. | Switch device |
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